1
|
Hsiao YL, Jang C, Lin YM, Wang CH, Liu CP. Ultra-Low-Power and Wide-Operating-Voltage-Window Capacitive Piezotronic Sensor through Coupling of Piezocharges and Depletion Widths for Tactile Sensing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:49338-49345. [PMID: 37819782 DOI: 10.1021/acsami.3c07368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
The rapid growth of Artificial Intelligence and Internet of Things (AIoT) demands the development of ultra-low-power devices for future advanced technology. In this study, we introduce a capacitive piezotronic sensor specifically designed for tactile sensing, which enables an ultra-low-voltage operation at nearly 0 reading bias conditions with a consistent response within a wide voltage range. This sensor directly detects capacitance changes induced by piezocharges, reflecting perturbation of the effective depletion width, and ensures ultralow power capability by eliminating the necessity of turning on the Schottky diode for the first time. The dynamic response of the sensor demonstrates ultralow power capability and immunity to triboelectric interference, making it particularly suitable for tactile sensing applications in robotics, prosthetics, and wearables. This study provides valuable insights and design guidelines for future ultra-low-power thin-film-based capacitive piezotronic/piezophototronic devices for tactile sensing.
Collapse
Affiliation(s)
- Yu-Liang Hsiao
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Chen Jang
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Yi-Miao Lin
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Chao-Hung Wang
- Miin Wu School of Computing, National Cheng Kung University, Tainan 70101, Taiwan
- Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan 70101, Taiwan
| | - Chuan-Pu Liu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
- Hierarchical Green-Energy Materials Research Center, National Cheng Kung University, Tainan 70101, Taiwan
- Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan 70101, Taiwan
| |
Collapse
|
2
|
Wei C, Lin W, Wang L, Cao Z, Huang Z, Liao Q, Guo Z, Su Y, Zheng Y, Liao X, Chen Z. Conformal Human-Machine Integration Using Highly Bending-Insensitive, Unpixelated, and Waterproof Epidermal Electronics Toward Metaverse. NANO-MICRO LETTERS 2023; 15:199. [PMID: 37582974 PMCID: PMC10427580 DOI: 10.1007/s40820-023-01176-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2023] [Accepted: 07/21/2023] [Indexed: 08/17/2023]
Abstract
Efficient and flexible interactions require precisely converting human intentions into computer-recognizable signals, which is critical to the breakthrough development of metaverse. Interactive electronics face common dilemmas, which realize high-precision and stable touch detection but are rigid, bulky, and thick or achieve high flexibility to wear but lose precision. Here, we construct highly bending-insensitive, unpixelated, and waterproof epidermal interfaces (BUW epidermal interfaces) and demonstrate their interactive applications of conformal human-machine integration. The BUW epidermal interface based on the addressable electrical contact structure exhibits high-precision and stable touch detection, high flexibility, rapid response time, excellent stability, and versatile "cut-and-paste" character. Regardless of whether being flat or bent, the BUW epidermal interface can be conformally attached to the human skin for real-time, comfortable, and unrestrained interactions. This research provides promising insight into the functional composite and structural design strategies for developing epidermal electronics, which offers a new technology route and may further broaden human-machine interactions toward metaverse.
Collapse
Affiliation(s)
- Chao Wei
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China
| | - Wansheng Lin
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China
| | - Liang Wang
- Department of Engineering Mechanics, School of Naval Architecture, Ocean and Civil Engineering, Shanghai Jiao Tong University, Shanghai, 200240, People's Republic of China
| | - Zhicheng Cao
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China
| | - Zijian Huang
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China
| | - Qingliang Liao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Ziquan Guo
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China
| | - Yuhan Su
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China
| | - Yuanjin Zheng
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xinqin Liao
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China.
| | - Zhong Chen
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China.
| |
Collapse
|
3
|
Kim KN, Ko WS, Byun JH, Lee DY, Jeong JK, Lee HD, Lee GW. Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods. SENSORS (BASEL, SWITZERLAND) 2022; 22:8907. [PMID: 36433504 PMCID: PMC9698253 DOI: 10.3390/s22228907] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2022] [Revised: 11/11/2022] [Accepted: 11/15/2022] [Indexed: 06/16/2023]
Abstract
In this study, a bottom-gated ZnO thin film transistor (TFT) pressure sensor with nanorods (NRs) is suggested. The NRs are formed on a planar channel of the TFT by hydrothermal synthesis for the mediators of pressure amplification. The fabricated devices show enhanced sensitivity by 16~20 times better than that of the thin film structure because NRs have a small pressure transmission area and causes more strain in the underlayered piezoelectric channel material. When making a sensor with a three-terminal structure, the leakage current in stand-by mode and optimal conductance state for pressure sensor is expected to be controlled by the gate voltage. A scanning electron microscope (SEM) was used to identify the nanorods grown by hydrothermal synthesis. X-ray diffraction (XRD) was used to compare ZnO crystallinity according to device structure and process conditions. To investigate the effect of NRs, channel mobility is also extracted experimentally and the lateral flow of current density is analyzed with simulation (COMSOL) showing that when the piezopotential due to polarization is formed vertically in the channel, the effective mobility is degraded.
Collapse
Affiliation(s)
| | | | | | | | | | | | - Ga-Won Lee
- Correspondence: ; Tel.: +82-42-821-5666; Fax: +82-42-823-9544
| |
Collapse
|
4
|
Wei C, Lin W, Liang S, Chen M, Zheng Y, Liao X, Chen Z. An All-In-One Multifunctional Touch Sensor with Carbon-Based Gradient Resistance Elements. NANO-MICRO LETTERS 2022; 14:131. [PMID: 35699779 PMCID: PMC9198138 DOI: 10.1007/s40820-022-00875-9] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Accepted: 05/09/2022] [Indexed: 06/09/2023]
Abstract
HIGHLIGHTS Carbon-based gradient resistance element structure is proposed for the construction of multifunctional touch sensor, which will promote wide detection and recognition range of multiple mechanical stimulations. Multifunctional touch sensor with gradient resistance element and two electrodes is demonstrated to eliminate signals crosstalk and prevent interference during position sensing for human-machine interactions. Biological sensing interface based on a deep-learning-assisted all-in-one multipoint touch sensor enables users to efficiently interact with virtual world. Human-machine interactions using deep-learning methods are important in the research of virtual reality, augmented reality, and metaverse. Such research remains challenging as current interactive sensing interfaces for single-point or multipoint touch input are trapped by massive crossover electrodes, signal crosstalk, propagation delay, and demanding configuration requirements. Here, an all-in-one multipoint touch sensor (AIOM touch sensor) with only two electrodes is reported. The AIOM touch sensor is efficiently constructed by gradient resistance elements, which can highly adapt to diverse application-dependent configurations. Combined with deep learning method, the AIOM touch sensor can be utilized to recognize, learn, and memorize human-machine interactions. A biometric verification system is built based on the AIOM touch sensor, which achieves a high identification accuracy of over 98% and offers a promising hybrid cyber security against password leaking. Diversiform human-machine interactions, including freely playing piano music and programmatically controlling a drone, demonstrate the high stability, rapid response time, and excellent spatiotemporally dynamic resolution of the AIOM touch sensor, which will promote significant development of interactive sensing interfaces between fingertips and virtual objects.
Collapse
Affiliation(s)
- Chao Wei
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China
| | - Wansheng Lin
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China
| | - Shaofeng Liang
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China
| | - Mengjiao Chen
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China
| | - Yuanjin Zheng
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xinqin Liao
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China.
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province, Xiamen, 361005, People's Republic of China.
| | - Zhong Chen
- Department of Electronic Science, Xiamen University, Xiamen, 361005, People's Republic of China.
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province, Xiamen, 361005, People's Republic of China.
| |
Collapse
|
5
|
Nguyen T, Dinh T, Phan HP, Pham TA, Dau VT, Nguyen NT, Dao DV. Advances in ultrasensitive piezoresistive sensors: from conventional to flexible and stretchable applications. MATERIALS HORIZONS 2021; 8:2123-2150. [PMID: 34846421 DOI: 10.1039/d1mh00538c] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The piezoresistive effect has been a dominant mechanical sensing principle that has been widely employed in a range of sensing applications. This transducing concept still receives great attention because of the huge demand for developing small, low-cost, and high-performance sensing devices. Many researchers have extensively explored new methods to enhance the piezoresistive effect and to make sensors more and more sensitive. Many interesting phenomena and mechanisms to enhance the sensitivity have been discovered. Numerous review papers on the piezoresistive effect have been published; however, there is no comprehensive review article that thoroughly analyses methods and approaches to enhance the piezoresistive effect. This paper comprehensively reviews and presents all the advanced enhancement methods ranging from the quantum physical effect and new materials to nanoscopic and macroscopic structures, and from conventional rigid to flexible, stretchable and wearable applications. In addition, the paper summarises results recently achieved on applying the above-mentioned innovative sensing enhancement techniques in making extremely sensitive piezoresistive transducers.
Collapse
Affiliation(s)
- Thanh Nguyen
- Queensland Micro- and Nanotechnology Centre, Griffith University, Australia.
| | | | | | | | | | | | | |
Collapse
|
6
|
Lee PH, Brahma S, Dutta J, Huang JL, Liu CP. Synergistic effects of Ga doping and Mg alloying over the enhancement of the stress sensitivity of a Ga-doped MgZnO pressure sensor. NANOSCALE ADVANCES 2021; 3:3909-3917. [PMID: 36133018 PMCID: PMC9418921 DOI: 10.1039/d0na01069c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/24/2020] [Accepted: 05/18/2021] [Indexed: 06/16/2023]
Abstract
We demonstrate the synergistic effects of Ga doping and Mg alloying into ZnO on the large enhancement of the piezopotential and stress sensing performance of piezotronic pressure sensors made of Ga-doped MgZnO films. Piezopotential-induced pressure sensitivity was enhanced through the modulation of the Schottky barrier height. Doping with Ga (0.62 Å) of larger ionic radius and alloying with Mg (0.57 Å) of smaller ionic radius than Zn ions can synergistically affect the overall structural, optical and piezoelectric properties of the resulting thin films. The crystal quality of Ga-doped MgZnO films either improved (X Ga ≦ 0.041) or deteriorated (X Ga ≧ 0.041) depending on the Ga doping concentration. The band gap increased from 3.90 eV for pristine MgZnO to 3.93 eV at X Ga = 0.076, and the piezoelectric coefficient (d 33) improved from ∼23.25 pm V-1 to ∼33.17 pm V-1 at an optimum Ga concentration (X Ga = 0.027) by ∼2.65 times. The change in the Schottky barrier height ΔΦ b increased from -4.41 meV (MgZnO) to -4.81 meV (X Ga = 0.027) and decreased to -3.99 meV at a high Ga doping concentration (X Ga = 0.041). The stress sensitivity (0.2 kgf) enhanced from 28.50 MPa-1 for the pristine MgZnO to 31.36 MPa-1 (X Ga = 0.027) and decreased to 25.56 MPa-1 at higher Ga doping concentrations, indicating the synergistic effects of Ga doping and Mg alloying over the pressure sensing performance of Ga-doped MgZnO films.
Collapse
Affiliation(s)
- Ping Han Lee
- Department of Materials Science and Engineering, National Cheng Kung University Tainan 701 Taiwan
| | - Sanjaya Brahma
- Department of Materials Science and Engineering, National Cheng Kung University Tainan 701 Taiwan
- Hierarchical Green-Energy Materials (Hi-GEM) Research Center, National Cheng Kung University Tainan 70101 Taiwan
| | - Jit Dutta
- Department of Materials Science and Engineering, National Cheng Kung University Tainan 701 Taiwan
| | - Jow-Lay Huang
- Department of Materials Science and Engineering, National Cheng Kung University Tainan 701 Taiwan
- Center for Micro/Nano Science and Technology, National Cheng Kung University Tainan 70101 Taiwan
- Hierarchical Green-Energy Materials (Hi-GEM) Research Center, National Cheng Kung University Tainan 70101 Taiwan
| | - Chuan-Pu Liu
- Department of Materials Science and Engineering, National Cheng Kung University Tainan 701 Taiwan
| |
Collapse
|
7
|
Chen S, Chen Y, Li D, Xu Y, Xu F. Flexible and Sensitivity-Adjustable Pressure Sensors Based on Carbonized Bacterial Nanocellulose/Wood-Derived Cellulose Nanofibril Composite Aerogels. ACS APPLIED MATERIALS & INTERFACES 2021; 13:8754-8763. [PMID: 33590754 DOI: 10.1021/acsami.0c21392] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
For sustainability and environmental friendliness, the renewable biomaterials including cellulose have been widely used in flexible electronics, such as pressure sensors. Herein, the carbonized bacterial nanocellulose with excellent conductivity and wood-derived cellulose nanofibrils are combined to prepare the aerogel through directional ice-templating and freeze-drying. The obtained composite aerogel, which has a porous structure and aligned channels, is further employed as an active layer to prepare the resistive-type pressure sensor on a paper substrate. This pressure sensor exhibits remarkable flexibility, fast response, reliability, and especially adjustable sensitivity in a wide pressure range (0-100 kPa). In addition, the sensor's working mechanism and potential applications, such as motion detection, footstep recognition, and communication with smartphones via Bluetooth, are also well demonstrated. Moreover, this work provides novel insights into the development of green pressure sensors and the utilization of sustainable natural biomaterials in high-tech fields.
Collapse
Affiliation(s)
- Sheng Chen
- Beijing Advanced Innovation Center for Tree Breeding by Molecular Design, Beijing Key Laboratory of Lignocellulosic Chemistry, Beijing Forestry University, Beijing 100083, China
| | - Yanglei Chen
- Beijing Advanced Innovation Center for Tree Breeding by Molecular Design, Beijing Key Laboratory of Lignocellulosic Chemistry, Beijing Forestry University, Beijing 100083, China
| | - Deqiang Li
- Beijing Advanced Innovation Center for Tree Breeding by Molecular Design, Beijing Key Laboratory of Lignocellulosic Chemistry, Beijing Forestry University, Beijing 100083, China
| | - Yanglei Xu
- Beijing Advanced Innovation Center for Tree Breeding by Molecular Design, Beijing Key Laboratory of Lignocellulosic Chemistry, Beijing Forestry University, Beijing 100083, China
| | - Feng Xu
- Beijing Advanced Innovation Center for Tree Breeding by Molecular Design, Beijing Key Laboratory of Lignocellulosic Chemistry, Beijing Forestry University, Beijing 100083, China
| |
Collapse
|
8
|
Pataniya PM, Bhakhar SA, Tannarana M, Zankat C, Patel V, Solanki G, Patel K, Jha PK, Late DJ, Sumesh C. Highly sensitive and flexible pressure sensor based on two-dimensional MoSe2 nanosheets for online wrist pulse monitoring. J Colloid Interface Sci 2021; 584:495-504. [DOI: 10.1016/j.jcis.2020.10.006] [Citation(s) in RCA: 34] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2020] [Revised: 09/28/2020] [Accepted: 10/04/2020] [Indexed: 01/17/2023]
|
9
|
Pham T, Qamar A, Dinh T, Masud MK, Rais‐Zadeh M, Senesky DG, Yamauchi Y, Nguyen N, Phan H. Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2001294. [PMID: 33173726 PMCID: PMC7640356 DOI: 10.1002/advs.202001294] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2020] [Revised: 06/08/2020] [Indexed: 05/05/2023]
Abstract
Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III-nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom-up and top-down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast-emerging research field.
Collapse
Affiliation(s)
- Tuan‐Anh Pham
- Queensland Micro and Nanotechnology CentreGriffith UniversityNathanQLD4111Australia
| | - Afzaal Qamar
- Electrical Engineering DepartmentUniversity of MichiganAnn ArborMI48109USA
| | - Toan Dinh
- Queensland Micro and Nanotechnology CentreGriffith UniversityNathanQLD4111Australia
- Department of Mechanical EngineeringUniversity of Southern QueenslandSpringfieldQLD4300Australia
| | - Mostafa Kamal Masud
- Australian Institute of Bioengineering and NanotechnologyThe University of QueenslandSt LuciaQLD4072Australia
| | - Mina Rais‐Zadeh
- Electrical Engineering DepartmentUniversity of MichiganAnn ArborMI48109USA
- NASA JPLCalifornia Institute of TechnologyPasadenaCA91109USA
| | - Debbie G. Senesky
- Department of Aeronautics and AstronauticsStanford UniversityStanfordCA94305USA
| | - Yusuke Yamauchi
- Australian Institute of Bioengineering and NanotechnologyThe University of QueenslandSt LuciaQLD4072Australia
| | - Nam‐Trung Nguyen
- Queensland Micro and Nanotechnology CentreGriffith UniversityNathanQLD4111Australia
| | - Hoang‐Phuong Phan
- Queensland Micro and Nanotechnology CentreGriffith UniversityNathanQLD4111Australia
| |
Collapse
|
10
|
Panth M, Cook B, Alamri M, Ewing D, Wilson A, Wu JZ. Flexible Zinc Oxide Nanowire Array/Graphene Nanohybrid for High-Sensitivity Strain Detection. ACS OMEGA 2020; 5:27359-27367. [PMID: 33134698 PMCID: PMC7594157 DOI: 10.1021/acsomega.0c03683] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2020] [Accepted: 09/28/2020] [Indexed: 05/12/2023]
Abstract
A fully flexible strain sensor consisting of vertically aligned ZnO nanowires on graphene transferred on polyethylene terephthalate with prefabricated Au/Ti electrodes (ZnO-VANWs/Gr)/PET) has been obtained. The ZnO-VANWs were grown in solution using a seedless hydrothermal process and are single-crystalline of (0001) orientation that provides optimal piezoelectric gating on graphene when deformed mechanically. The change of the graphene channel conductance under such a piezoelectric gating through transduction of the mechanical deformation on the ZnO-VANWs/Gr was used to detect the strain induced by the deformation. Under applied normal forces of 0.30, 0.50, and 0.70 N in a dynamic manner, the ZnO-VANWs/Gr/PET strain sensors exhibited a high response and response times of ∼0.20 s to both force on and off were achieved. Under mechanical bending curvatures of 0.18, 0.23, 0.37, and 0.45 cm-1, high sensitivity of the gauge factors up to ∼248 and response times of 0.20 s/0.20 s (rise/fall) were achieved on the ZnO-VANWs/Gr/PET strain sensors. Moreover, the response changes polarity when the directions of bending alters between up and down, corresponding to the polarity change of the space charge on the ZnO-VANWs/Gr interface as a consequence of the compressive and tensile strains along the ZnO-VANWs. This result shows that the low-cost and scalable ZnO-VANWs/Gr/PET strain sensors are promising for applications in stress/strain monitoring, wearable electronics, and touch screens.
Collapse
Affiliation(s)
- Mohan Panth
- Department
of Physics and Astronomy, University of
Kansas, Lawrence, Kansas 66045, United States
| | - Brent Cook
- Department
of Physics and Astronomy, University of
Kansas, Lawrence, Kansas 66045, United States
| | - Mohammed Alamri
- Department
of Physics and Astronomy, University of
Kansas, Lawrence, Kansas 66045, United States
| | - Dan Ewing
- Department
of Energy’s Kansas City National Security Campus, Kansas City, Missouri 64147, United States
| | - Amy Wilson
- Department
of Energy’s Kansas City National Security Campus, Kansas City, Missouri 64147, United States
| | - Judy Z. Wu
- Department
of Physics and Astronomy, University of
Kansas, Lawrence, Kansas 66045, United States
| |
Collapse
|
11
|
Wang Y, Zhao J, Xia Y, Liu P. Configuration optimization of bionic piezoelectric hair sensor for acoustic/tactile detection. BIOINSPIRATION & BIOMIMETICS 2020; 15:056015. [PMID: 32357350 DOI: 10.1088/1748-3190/ab8f6c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Specialized sensory hairs are important biological sensors for arthropods to detect and recognize environmental conditions including acoustic, pressure and airflow signals. However, the present design methodology of such biomimic micro devices are mainly depending on shape mimicking, which greatly restricts their performance. In this paper, a novel genetic algorithm based optimization model for design of piezoelectric functional hair is developed for improving its acoustic pressure or tactile sensitivity. Furthermore, the sensing mechanism of axially polarized piezoelectric hair is explored and the main influencing factors on sensitivity including hair configuration and axial strain distribution are determined. Then, a series of optimized hair configurations are obtained in a specific frequency band from 1 Hz to 500 Hz, whose average sensitivity of 2.21 × 10-3 V Pa-1 is 10 times greater than that of the straight hair of 2.15 × 10-4 V Pa-1 with the same size. For tactile load detection, the output voltage of the optimized hair is about 1.5 times as much as that of the straight hair. The obtained hairs are similar with the spider's trichobothria and tactile hair, which presents an explanation of biological hairs sensitive to dynamic and static loads.
Collapse
Affiliation(s)
- Yan Wang
- School of Automotive Engineering, Dalian University of Technology, Dalian 116024, People's Republic of China
| | | | | | | |
Collapse
|
12
|
Oh H, Dayeh SA. Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices. SENSORS (BASEL, SWITZERLAND) 2020; 20:E3872. [PMID: 32664467 PMCID: PMC7411910 DOI: 10.3390/s20143872] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/13/2020] [Revised: 05/19/2020] [Accepted: 05/22/2020] [Indexed: 11/17/2022]
Abstract
Piezoelectric devices transduce mechanical energy to electrical energy by elastic deformation, which distorts local dipoles in crystalline materials. Amongst electromechanical sensors, piezoelectric devices are advantageous because of their scalability, light weight, low power consumption, and readily built-in amplification and ability for multiplexing, which are essential for wearables, medical devices, and robotics. This paper reviews recent progress in active piezoelectric devices. We classify these piezoelectric devices according to the material dimensionality and present physics-based device models to describe and quantify the piezoelectric response for one-dimensional nanowires, emerging two-dimensional materials, and three-dimensional thin films. Different transduction mechanisms and state-of-the-art devices for each type of material are reviewed. Perspectives on the future applications of active piezoelectric devices are discussed.
Collapse
Affiliation(s)
- Hongseok Oh
- Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA
| | - Shadi A Dayeh
- Integrated Electronics and Biointerfaces Laboratory, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA 92093, USA
| |
Collapse
|
13
|
Duan S, Wu J, Xia J, Lei W. Innovation Strategy Selection Facilitates High-Performance Flexible Piezoelectric Sensors. SENSORS 2020; 20:s20102820. [PMID: 32429255 PMCID: PMC7284718 DOI: 10.3390/s20102820] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/02/2020] [Revised: 05/12/2020] [Accepted: 05/12/2020] [Indexed: 01/14/2023]
Abstract
Piezoelectric sensors with high performance and low-to-zero power consumption meet the growing demand in the flexible microelectronic system with small size and low power consumption, which are promising in robotics and prosthetics, wearable devices and electronic skin. In this review, the development process, application scenarios and typical cases are discussed. In addition, several strategies to improve the performance of piezoelectric sensors are summed up: (1) material innovation: from piezoelectric semiconductor materials, inorganic piezoceramic materials, organic piezoelectric polymer, nanocomposite materials, to emerging and promising molecular ferroelectric materials. (2) designing microstructures on the surface of the piezoelectric materials to enlarge the contact area of piezoelectric materials under the applied force. (3) addition of dopants such as chemical elements and graphene in conventional piezoelectric materials. (4) developing piezoelectric transistors based on piezotronic effect. In addition, the principle, advantages, disadvantages and challenges of every strategy are discussed. Apart from that, the prospects and directions of piezoelectric sensors are predicted. In the future, the electronic sensors need to be embedded in the microelectronic systems to play the full part. Therefore, a strategy based on peripheral circuits to improve the performance of piezoelectric sensors is proposed in the final part of this review.
Collapse
|
14
|
Yi C, Hou Y, He K, Li W, Li N, Wang Z, Yang B, Xu S, Wang H, Gao C, Wang Z, Gu G, Wang Z, Wei L, Yang C, Chen M. Highly Sensitive and Wide Linear-Response Pressure Sensors Featuring Zero Standby Power Consumption under Bending Conditions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:19563-19571. [PMID: 32301610 DOI: 10.1021/acsami.0c02774] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The ability of a flexible pressure sensor to possess zero power consumption in standby mode, high sensitivity, and wide linear-response range is critical in real flexible matrix-based scenes. However, when the conventional flexible pressure sensors are attached on a curved surface, a pseudosignal response is generated because of the normal stress, resulting in a short linear-response range. Here, a flexible piezoresistive pressure sensor with high performance, zero standby power consumption is demonstrated. The flexible pressure sensor is fabricated from polydimethylsiloxane (PDMS)/carbon black (CB), patterned polyimide (PI) spacer layer, and laser-induced graphene (LIG) interdigital electrodes. Benefiting from the hierarchical structure and sufficient roughness of PDMS/CB and LIG interdigital electrodes, the proposed pressure sensors (PDMS/CB/PI/LIG) exhibit high sensitivity (43 kPa-1), large linear-response range (0.4-13.6 kPa), fast response (<40 ms), and long-term cycle stability (>1800 cycles). The resulting pressure sensor also features zero standby power consumption merit under certain bending conditions (bending angle: 0-5o). Furthermore, the effect of the hole diameter of the PI spacer layer on the performance of the pressure sensors is experimentally and theoretically investigated. As a proof of concept, a bioinspired artificial haptic neuron system has been successfully equipped to modulate the number of lit LED lights. The proposed high-performance pressure sensor has promising potential to be used in flexible and wearable electronics, especially for the applications in actual flexible matrix-based scenes.
Collapse
Affiliation(s)
- Chenghan Yi
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Yuxin Hou
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- School of Computer and Control Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ke He
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Weimin Li
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Nianci Li
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- School of Computer and Control Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhongguo Wang
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Bing Yang
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Shuda Xu
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Heng Wang
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Chuanzeng Gao
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Zhengyan Wang
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, People's Republic of China
| | - Guoqiang Gu
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Zhixun Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
| | - Lei Wei
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
| | - Chunlei Yang
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| | - Ming Chen
- Center for Information Photonics and Energy Materials, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, People's Republic of China
| |
Collapse
|
15
|
Wang J, Liu B. Electronic and optoelectronic applications of solution-processed two-dimensional materials. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2019; 20:992-1009. [PMID: 31692852 PMCID: PMC6818124 DOI: 10.1080/14686996.2019.1669220] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2019] [Revised: 09/15/2019] [Accepted: 09/15/2019] [Indexed: 05/27/2023]
Abstract
The isolation of graphene in 2004 has initiated much interest in two-dimensional (2D) materials. With decades of development, solution processing of 2D materials has becoming very promising due to its large-scale production capability, and it is therefore necessary to examine progress on solution-processed 2D materials and their applications. In this review, we highlight recent advances in the assembly of solution-processed 2D materials into thin films and the use of them for electronics and optoelectronics. We first present an overview about typical approaches to assemble solution-processed 2D materials into desired structures, including layer-by-layer assembly, Langmuir-Blodgett assembly, spin coating, electrophoretic deposition, inkjet printing, and vacuum filtration. Then, electronic and optoelectronic applications of such assembly films are presented, such as thin-film transistors, transparent conductive films, mechanical and chemical sensors, photodetectors and optoelectronic devices, as well as flexible and printed electronics. Finally, our perspectives on challenges and future opportunities in this important field are proposed.
Collapse
Affiliation(s)
- Jingyun Wang
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center (SGC), Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen, P. R. China
| |
Collapse
|
16
|
Lu Y, Liu Z, Yan H, Peng Q, Wang R, Barkey ME, Jeon JW, Wujcik EK. Ultrastretchable Conductive Polymer Complex as a Strain Sensor with a Repeatable Autonomous Self-Healing Ability. ACS APPLIED MATERIALS & INTERFACES 2019; 11:20453-20464. [PMID: 31095374 DOI: 10.1021/acsami.9b05464] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Wearable strain sensors are essential for the realization of applications in the broad fields of remote healthcare monitoring, soft robots, and immersive gaming, among many others. These flexible sensors should be comfortably adhered to the skin and capable of monitoring human motions with high accuracy, as well as exhibiting excellent durability. However, it is challenging to develop electronic materials that possess the properties of skin-compliant, elastic, stretchable, and self-healable. This work demonstrates a new regenerative polymer complex composed of poly(2-acrylamido-2-methyl-1-propanesulfonic acid), polyaniline, and phytic acid as a skin-like electronic material. It exhibits ultrahigh stretchability (1935%), repeatable autonomous self-healing ability (repeating healing efficiency >98%), quadratic response to strain ( R2 > 0.9998), and linear response to flexion bending ( R2 > 0.9994), outperforming current reported wearable strain sensors. The deprotonated polyelectrolyte, multivalent anion, and doped conductive polymer, under ambient conditions, synergistically construct a regenerative dynamic network of polymer complex cross-linked by hydrogen bonds and electrostatic interactions, which enables ultrahigh stretchability and repeatable self-healing. Sensitive strain-responsive geometric and piezoresistive mechanisms of the material owing to the homogeneous and viscoelastic nature provide excellent linear responses to omnidirectional tensile strain and bending deformations. Furthermore, this material is scalable and simple to process in an environmentally friendly manner, paving the way for the next-generation flexible electronics.
Collapse
Affiliation(s)
| | | | | | | | | | | | - Ju-Won Jeon
- Department of Applied Chemistry , Kookmin University , Seoul 02701 , Republic of Korea
| | | |
Collapse
|
17
|
A highly stretchable large strain sensor based on PEDOT–thermoplastic polyurethane hybrid prepared via in situ vapor phase polymerization. J IND ENG CHEM 2019. [DOI: 10.1016/j.jiec.2019.02.013] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
|
18
|
Han X, Feng S, Zhao Y, Li L, Zhan Z, Tao Z, Fan Y, Lu W, Zuo W, Fu D. Synthesis of ternary oxide Zn2GeO4 nanowire networks and their deep ultraviolet detection properties. RSC Adv 2019; 9:1394-1402. [PMID: 35518046 PMCID: PMC9059668 DOI: 10.1039/c8ra09307e] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/11/2018] [Accepted: 12/20/2018] [Indexed: 01/21/2023] Open
Abstract
Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted a great deal of attention for deep ultraviolet (DUV) photodetector applications, because it is expected to be blind to the UV-A/B band (290–400 nm) and only responsive to the UV-C band (200–290 nm). Here, we report on the synthesis of Zn2GeO4 nanowire (NW) networks by lower pressure chemical vapor deposition and investigate their corresponding DUV detection properties. We find that pure Zn2GeO4 NWs could be obtained at a growth pressure of 1 kPa. The DUV detection tests reveal that growth pressure exerts a significant effect on DUV detection performance. The Zn2GeO4 NW networks produced under 1 kPa show an excellent solar-blind photoresponsivity with fast rise and decay times (trise ≈ 0.17 s and tdecay ≈ 0.14 s). Ternary oxide Zn2GeO4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted lots of attention for deep UV photodetector applications, as it is blind to the UV-A/B band and only responds to the UV-C band.![]()
Collapse
|
19
|
Guo W, Tan C, Shi K, Li J, Wang XX, Sun B, Huang X, Long YZ, Jiang P. Wireless piezoelectric devices based on electrospun PVDF/BaTiO 3 NW nanocomposite fibers for human motion monitoring. NANOSCALE 2018; 10:17751-17760. [PMID: 30211423 DOI: 10.1039/c8nr05292a] [Citation(s) in RCA: 58] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Real-time personalized motion monitoring and analysis are important for human health. Thus, to satisfy the needs in this area and the ever-increasing demand for wearable electronics, we design and develop a wireless piezoelectric device consisting of a piezoelectric pressure sensor based on electrospun PVDF/BaTiO3 nanowire (NW) nanocomposite fibers and a wireless circuit system integrated with a data conversion control module, a signal acquisition and amplification module, and a Bluetooth module. Finally, real-time piezoelectric signals of human motion can be displayed by an App on an Android mobile phone for wireless monitoring and analysis. This wireless piezoelectric device is proven to be sensitive to human motion such as squatting up and down, walking, and running. The results indicate that our wireless piezoelectric device has potential applications in wearable medical electronics, particularly in the fields of rehabilitation and sports medicine.
Collapse
Affiliation(s)
- Wenzhe Guo
- Collaborative Innovation Center for Nanomaterials & Devices, College of Physics, Qingdao University, Qingdao 266071, China.
| | | | | | | | | | | | | | | | | |
Collapse
|
20
|
Jeong S, Kim MW, Jo YR, Kim TY, Leem YC, Kim SW, Kim BJ, Park SJ. Crystal-Structure-Dependent Piezotronic and Piezo-Phototronic Effects of ZnO/ZnS Core/Shell Nanowires for Enhanced Electrical Transport and Photosensing Performance. ACS APPLIED MATERIALS & INTERFACES 2018; 10:28736-28744. [PMID: 30070111 DOI: 10.1021/acsami.8b06192] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report the crystal-structure-dependent piezotronic and piezo-phototronic effects of ZnO/ZnS core/shell nanowires (CS NWs) having different shell layer crystalline structures. The wurtzite (WZ) ZnO/WZ ZnS CS NWs showed higher electrical transport and photosensing properties under external strain than the WZ ZnO/zinc blende (ZB) ZnS CS NWs. The WZ ZnO/WZ ZnS CS NWs under a compressive strain of -0.24% showed 4.4 and 8.67 times larger increase in the output current (1.93 × 10-4 A) and photoresponsivity (8.76 × 10-1 A/W) than those under no strain. However, the WZ ZnO/ZB ZnS CS NWs under the same strain condition showed 3.2 and 2.16 times larger increase in the output current (1.13 × 10-4 A) and photoresponsivity (2.16 × 10-1 A/W) than those under no strain. This improvement is ascribed to strain-induced piezopolarization charges at both the WZ ZnO NWs and the grains of the WZ ZnS shell layer in WZ ZnO/WZ ZnS CS NWs, whereas piezopolarization charges are induced only in the ZnO core region of the WZ ZnO/ZB ZnS CS NWs. These charges can change the type-II band alignment in the ZnO and ZnS interfacial region as well as the Schottky barrier height at the junction between the semiconductor and the metal, thus facilitating electrical transport and reducing the recombination probability of charge carriers under UV irradiation.
Collapse
Affiliation(s)
| | | | | | - Tae-Yun Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | | | - Sang-Woo Kim
- School of Advanced Materials Science and Engineering , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | | | | |
Collapse
|
21
|
Liao X, Zhang Z, Liang Q, Liao Q, Zhang Y. Flexible, Cuttable, and Self-Waterproof Bending Strain Sensors Using Microcracked Gold Nanofilms@Paper Substrate. ACS APPLIED MATERIALS & INTERFACES 2017; 9:4151-4158. [PMID: 28071895 DOI: 10.1021/acsami.6b12991] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Rapid advances in functional sensing electronics place tremendous demands on innovation toward creative uses of versatile advanced materials and effective designs of device structures. Here, we first report a feasible and effective fabrication strategy to integrate commercial abrasive papers with microcracked gold (Au) nanofilms to construct cuttable and self-waterproof crack-based resistive bending strain sensors. Via introducing surface microstructures, the sensitivities of the bending strain sensors are greatly enhanced by 27 times than that of the sensors without surface microstructures, putting forward an alternative suggestion for other flexible electronics to improve their performances. Besides, the bending strain sensors also endow rapid response and relaxation time of 20 ms and ultrahigh stability of >18 000 strain loading-unloading cycles in conjunction with flexibility and robustness. In addition, the concepts of cuttability and self-waterproofness (attain and even surpass IPX-7) of the bending strain sensors have been demonstrated. Because of the distinctive sensing properties, flexibility, cuttability, and self-waterproofness, the bending strain sensors are attractive and promising for wearable electronic devices and smart health monitoring system.
Collapse
Affiliation(s)
- Xinqin Liao
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing , Beijing 100083, China
| | - Zheng Zhang
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing , Beijing 100083, China
| | - Qijie Liang
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing , Beijing 100083, China
| | - Qingliang Liao
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing , Beijing 100083, China
| | - Yue Zhang
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing , Beijing 100083, China
- The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing , Beijing 100083, China
| |
Collapse
|
22
|
Jeyavelan M, Ramesh A, Rathes Kannan R, Sonia T, Rugunandhiri K, Hudson MS. Facile synthesis of uniformly dispersed ZnO nanoparticles on a polystyrene/rGO matrix and its superior electrical conductivity and photocurrent generation. RSC Adv 2017. [DOI: 10.1039/c7ra04361a] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/22/2023] Open
Abstract
Herein, a ZnO/PS/rGO composite was prepared via a simple reflex method and its microstructural and physical properties were characterized using XRD, SEM, HRTEM, TGA, FTIR, UV-visible, PL spectroscopy, PCTR and OCVD measurements.
Collapse
Affiliation(s)
- M. Jeyavelan
- Department of Physics
- Central University of Tamil Nadu
- Thiruvarur-610005
- India
| | - A. Ramesh
- Department of Physics
- Central University of Tamil Nadu
- Thiruvarur-610005
- India
| | | | - T. Sonia
- Department of Physics
- Central University of Tamil Nadu
- Thiruvarur-610005
- India
| | - K. Rugunandhiri
- Department of Physics
- Central University of Tamil Nadu
- Thiruvarur-610005
- India
| | | |
Collapse
|
23
|
Liao X, Zhang Z, Liao Q, Liang Q, Ou Y, Xu M, Li M, Zhang G, Zhang Y. Flexible and printable paper-based strain sensors for wearable and large-area green electronics. NANOSCALE 2016; 8:13025-13032. [PMID: 27314505 DOI: 10.1039/c6nr02172g] [Citation(s) in RCA: 37] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Paper-based (PB) green electronics is an emerging and potentially game-changing technology due to ease of recycling/disposal, the economics of manufacture and the applicability to flexible electronics. Herein, new-type printable PB strain sensors (PPBSSs) from graphite glue (graphite powder and methylcellulose) have been fabricated. The graphite glue is exposed to thermal annealing to produce surface micro/nano cracks, which are very sensitive to compressive or tensile strain. The devices exhibit a gauge factor of 804.9, response time of 19.6 ms and strain resolution of 0.038%, all performance indicators attaining and even surpassing most of the recently reported strain sensors. Due to the distinctive sensing properties, flexibility and robustness, the PPBSSs are suitable for monitoring of diverse conditions such as structural strain, vibrational motion, human muscular movements and visual control.
Collapse
Affiliation(s)
- Xinqin Liao
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China.
| | | | | | | | | | | | | | | | | |
Collapse
|
24
|
Gu Y, Yang X, Guan Y, Migliorato MA, Zhang Y. Enhanced electromechanical performance in metal–MgO–ZnO tunneling diodes due to the insulator layers. Inorg Chem Front 2016. [DOI: 10.1039/c6qi00159a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The enhanced electromechanical performance of metal–MgO–ZnO MISTDs is due to the highly strain sensitive energy barriers.
Collapse
Affiliation(s)
- Yousong Gu
- School of Materials Science and Engineering
- University of Science and Technology Beijing
- Beijing 100083
- China
- Beijing Municipal Key Laboratory of New Energy Materials and Technologies
| | - Xuhui Yang
- School of Materials Science and Engineering
- University of Science and Technology Beijing
- Beijing 100083
- China
| | - Yilin Guan
- School of Materials Science and Engineering
- University of Science and Technology Beijing
- Beijing 100083
- China
| | - Max A. Migliorato
- School of Materials Science and Engineering
- University of Science and Technology Beijing
- Beijing 100083
- China
- School of Electrical and Electronic Engineering
| | - Yue Zhang
- School of Materials Science and Engineering
- University of Science and Technology Beijing
- Beijing 100083
- China
- Beijing Municipal Key Laboratory of New Energy Materials and Technologies
| |
Collapse
|
25
|
Xu L, Li X, Zhan Z, Wang L, Feng S, Chai X, Lu W, Shen J, Weng Z, Sun J. Catalyst-Free, Selective Growth of ZnO Nanowires on SiO2 by Chemical Vapor Deposition for Transfer-Free Fabrication of UV Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2015; 7:20264-20271. [PMID: 26308593 DOI: 10.1021/acsami.5b05811] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Catalyst-free, selective growth of ZnO nanowires directly on the commonly used dielectric SiO2 layer is of both scientific significance and application importance, yet it is still a challenge. Here, we report a facile method to grow single-crystal ZnO nanowires on a large scale directly on SiO2/Si substrate through vapor-solid mechanism without using any predeposited metal catalyst or seed layer. We found that a rough SiO2/Si substrate surface created by the reactive ion etching is critical for ZnO growth without using catalyst. ZnO nanowire array exclusively grows in area etched by the reactive ion etching method. The advantages of this method include facile and safe roughness-assisted catalyst-free growth of ZnO nanowires on SiO2/Si substrate and the subsequent transfer-free fabrication of electronic or optoelectronic devices. The ZnO nanowire UV photodetector fabricated by a transfer-free process presented high performance in responsivity, quantum efficiency and response speed, even without any post-treatments. The strategy shown here would greatly reduce the complexity in nanodevice fabrication and give an impetus to the application of ZnO nanowires in nanoelectronics and optoelectronics.
Collapse
Affiliation(s)
- Liping Xu
- School of Electronics and Information Engineering, Changchun University of Science and Technology , 7089 Weixing Road, Changchun, Jilin 130022, People's Republic of China
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing, 400714, People's Republic of China
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing 400714, People's Republic of China
| | - Xin Li
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing, 400714, People's Republic of China
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing 400714, People's Republic of China
| | - Zhaoyao Zhan
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing, 400714, People's Republic of China
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing 400714, People's Republic of China
| | - Liang Wang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing, 400714, People's Republic of China
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing 400714, People's Republic of China
| | - Shuanglong Feng
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing, 400714, People's Republic of China
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing 400714, People's Republic of China
| | - Xiangyu Chai
- School of Electronics and Information Engineering, Changchun University of Science and Technology , 7089 Weixing Road, Changchun, Jilin 130022, People's Republic of China
| | - Wenqiang Lu
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing, 400714, People's Republic of China
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing 400714, People's Republic of China
| | - Jun Shen
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing, 400714, People's Republic of China
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences , Chongqing 400714, People's Republic of China
| | - Zhankun Weng
- School of Electronics and Information Engineering, Changchun University of Science and Technology , 7089 Weixing Road, Changchun, Jilin 130022, People's Republic of China
| | - Jie Sun
- College of Electronic Information and Control Engineering, Beijing University of Technology , 100 Ping Le Yuan, Chaoyang District, Beijing 100124, People's Republic of China
| |
Collapse
|
26
|
Sultana A, Alam MM, Garain S, Sinha TK, Middya TR, Mandal D. An Effective Electrical Throughput from PANI Supplement ZnS Nanorods and PDMS-Based Flexible Piezoelectric Nanogenerator for Power up Portable Electronic Devices: An Alternative of MWCNT Filler. ACS APPLIED MATERIALS & INTERFACES 2015; 7:19091-19097. [PMID: 26284899 DOI: 10.1021/acsami.5b04669] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We demonstrate the requirement of electrical poling can be avoided in flexible piezoelectric nanogenerators (FPNGs) made of low-temperature hydrothermally grown wurtzite zinc sulfide nanorods (ZnS-NRs) blended with polydimethylsiloxane (PDMS). It has been found that conductive fillers, such as polyaniline (PANI) and multiwall carbon nanotubes (MWCNTs), can subsequently improve the overall performance of FPNG. A large electrical throughput (open circuit voltage ∼35 V with power density ∼2.43 μW/cm(3)) from PANI supplement added nanogenerator (PZP-FPNG) indicates that it is an effective means to replace the MWCNTs filler. The time constant (τ) estimated from the transient response of the capacitor charging curves signifying that the FPNGs are very much capable to charge the capacitors in very short time span (e.g., 3 V is accomplished in 50 s) and thus expected to be perfectly suitable in portable, wearable and flexible electronics devices. We demonstrate that FPNG can instantly lit up several commercial Light Emitting Diodes (LEDs) (15 red, 25 green, and 55 blue, individually) and power up several portable electronic gadgets, for example, wrist watch, calculator, and LCD screen. Thus, a realization of potential use of PANI in low-temperature-synthesized ZnS-NRs comprising piezoelectric based nanogenerator fabrication is experimentally verified so as to acquire a potential impact in sustainable energy applications. Beside this, wireless piezoelectric signal detection possibility is also worked out where a concept of self-powered smart sensor is introduced.
Collapse
Affiliation(s)
- Ayesha Sultana
- Organic Nano-Piezoelectric Device Laboratory, Department of Physics, Jadavpur University , Kolkata 700032, India
| | - Md Mehebub Alam
- Organic Nano-Piezoelectric Device Laboratory, Department of Physics, Jadavpur University , Kolkata 700032, India
| | - Samiran Garain
- Organic Nano-Piezoelectric Device Laboratory, Department of Physics, Jadavpur University , Kolkata 700032, India
| | - Tridib Kumar Sinha
- Materials Science Centre, Indian Institute of Technology (IIT) , Kharagpur 721302, India
| | - Tapas Ranjan Middya
- Organic Nano-Piezoelectric Device Laboratory, Department of Physics, Jadavpur University , Kolkata 700032, India
| | - Dipankar Mandal
- Organic Nano-Piezoelectric Device Laboratory, Department of Physics, Jadavpur University , Kolkata 700032, India
| |
Collapse
|