High-performance Ge quantum dot decorated graphene/zinc-oxide heterostructure infrared photodetector

Augmenting the Photocatalytic Performance of Direct Z-Scheme Bi2O3/g-C3N4 Nanocomposite

Huge demands for photocatalytically efficient visible-light-induced catalysts have spurred widespread interest in building adaptable heterojunctions. Here, we used in situ thermal polymerization to synthesise the Z-scheme Bi2O3/g-C3N4 heterojunction. The optical, structural, chemical, compositional and photocatalytic behaviours of the samples were analysed through various analytical techniques and photocatalytic methylene blue (MB) dye degradation reaction. Among the various ratios of Bi2O3/g-C3N4 heterojunction composites, the 1:1 ratio showed improved visible-light-induced catalytic activity, which attained 91.2% degradation efficiency after 120 min of visible-light exposure. The dye degradation efficiency was calculated under various environmental conditions by varying the dye concentration, solution pH and catalyst dosage. A improved Z-scheme photocatalytic mechanism was proposed in light of the results. A potential mechanism was suggested to explain the photocatalytic activity, and trapping experiments supported it. Last but not least, this strategy might be helpful to prepare the heterojunction photocatalyst for the degradation of organic pigments.

Ultraviolet-Visible-Near Infrared Broadband Photodetector Based on Electronspun Disorder ZnO Nanowires/Ge Quantum Dots Hybrid Structure

Ultraviolet-visible-near infrared broadband photodetectors have significant prospects in many fields such as image sensing, communication, chemical sensing, and day and nighttime surveillance. Hybrid one-dimensional (1D) and zero-dimensional (0D) materials are attractive for broadband-responsive photodetectors since its unique charges transfer characteristics and facile fabrication processes. Herein, a Si/ZnO nanowires/Ge quantum dots photodetector has been constructed via processes that combined electrospinning and spin-coating methods. A broadband response behavior from ultraviolet to near-infrared (from 250 to 1550 nm) is observed. The responsivity of the hybrid structure increases around three times from 550 to 1100 nm compared with the pure Si photodetector. Moreover, when the photodetector is illuminated by a light source exceeding 1100 nm, such as 1310 and 1550 nm, there is also a significant photoresponse. Additionally, the ZnO NWs/Ge quantum dots heterostructure is expected to be used in flexible substrates, which benefits from electrospinning and spin-coating processes. The strategy that combines 1D ZnO NWs and 0D solution-processed Ge QDs nanostructures may open a new avenue for flexible and broadband photodetector.

Fabrication of graphene: CdSe quantum dots/CdS nanorod heterojunction photodetector and role of graphene to enhance the photoresponsive characteristics

Integration of graphene with semiconducting quantum dots (QDs) provides an elegant way to access the intrinsic properties of graphene and optical properties of QDs concurrently to realize the high-performance optoelectronic devices. In the current article, we have demonstrated the high-performance photodetector based on graphene: CdSe QDs/CdS nanorod heterostructures. The resulting heterojunction photodetector with device configuration ITO/graphene: CdSe/CdS nanorods/Ag show excellent operating characteristics including a maximum photoresponsivity of 15.95 AW^-1and specific detectivity of 6.85 × 10¹²Jones under 530 nm light illumination. The device exhibits a photoresponse rise time of 545 ms and a decay time of 539 ms. Furthermore, the study of the effect of graphene nanosheets on the performance enhancement of heterojunction photodetector is carried out. The results indicate that, due to the enhanced energy transfer from photoexcited QDs to graphene layer, light absorption is increased and excitons are generated led to the enhancement of photocurrent density. In addition to that, the graphene: CdSe QDs/CdS nanorod interface can facilitate charge carrier transport effectively. This work provides a promising approach to develop high-performance visible-light photodetectors and utilizing advantageous features of graphene in optoelectronic devices.

Insight into the Effect of Ligands on the Optical Properties of Germanium Quantum Dots and Their Applications in Persistent Cell Imaging

Germanium quantum dots (GeQDs) show unique advantages in fluorescence applications due to their large quantum confinement effect and excellent biocompatibility. However, GeQDs are confronted with difficulty in accurately controlling the fluorescence emission. This defect brings challenges to understanding the fluorescence mechanism and limits the potential applications of GeQDs. In this paper, a series of GeQDs with the average diameter of about 2.6 nm modified with different ligands were synthesized by the chemical reduction method. The fluorescence emission of GeQDs can be changed from blue to yellow-green through adjusting the surface ligands. The influence of surface ligands on the fluorescence emission of GeQDs was thoroughly investigated by experimental and theoretical calculations. Furthermore, the synthesized GeQDs exhibit good biocompatibility and photostability and can act as high-performance fluorescence probes for long-term fluorescent bioimaging. This work provides a good and deep understanding of the fluorescence mechanism of GeQDs and will facilitate diverse promising applications of GeQDs in the near future.

Graphene Hybrid Structures for Integrated and Flexible Optoelectronics

Graphene (Gr) has many unique properties including gapless band structure, ultrafast carrier dynamics, high carrier mobility, and flexibility, making it appealing for ultrafast, broadband, and flexible optoelectronics. To overcome its intrinsic limit of low absorption, hybrid structures are exploited to improve the device performance. Particularly, van der Waals heterostructures with different photosensitive materials and photonic structures are very effective for improving photodetection and modulation efficiency. With such hybrid structures, Gr hybrid photodetectors can operate from ultraviolet to terahertz, with significantly improved R (up to 10⁹ A W^-1 ) and bandwidth (up to 128 GHz). Furthermore, integration of Gr with silicon (Si) complementary metal-oxide-semiconductor (CMOS) circuits, the human body, and soft tissues is successfully demonstrated, opening promising opportunities for wearable sensors and biomedical electronics. Here, the recent progress in using Gr hybrid structures toward high-performance photodetectors and integrated optoelectronic applications is reviewed.

Void-free 3D Bioprinting for In-situ Endothelialization and Microfluidic Perfusion

Two major challenges of 3D bioprinting are the retention of structural fidelity and efficient endothelialization for tissue vascularization. We address both of these issues by introducing a versatile 3D bioprinting strategy, in which a templating bioink is deposited layer-by-layer alongside a matrix bioink to establish void-free multimaterial structures. After crosslinking the matrix phase, the templating phase is sacrificed to create a well-defined 3D network of interconnected tubular channels. This void-free 3D printing (VF-3DP) approach circumvents the traditional concerns of structural collapse, deformation and oxygen inhibition, moreover, it can be readily used to print materials that are widely considered "unprintable". By pre-loading endothelial cells into the templating bioink, the inner surface of the channels can be efficiently cellularized with a confluent endothelial layer. This in-situ endothelialization method can be used to produce endothelium with a far greater uniformity than can be achieved using the conventional post-seeding approach. This VF-3DP approach can also be extended beyond tissue fabrication and towards customized hydrogel-based microfluidics and self-supported perfusable hydrogel constructs.

Recent advances in solution-processed photodetectors based on inorganic and hybrid photo-active materials

Due to their excellent and tailorable optoelectronic performance, low cost, facile fabrication, and compatibility with flexible substrates, solution-processed inorganic and hybrid photo-active materials have attracted extensive interest for next-generation photodetector applications. This review gives a comprehensive compilation of solution-processed photodetectors. The basic structures of the device and important parameters of photodetectors will be firstly summarized. Then the development of various solution processing technologies containing solution synthesis and liquid phase film-forming processes for the preparation of semiconductor films is described. From the materials science point of view, we give a comprehensive overview about the current status of solution processed semiconductor materials including inorganic and hybrid photo-active materials for the application of photodetectors. Moreover, challenges and future trends in the field of solution-processed photodetectors are proposed.

A feasible strategy to prepare quantum dot-incorporated carbon nanofibers as free-standing platforms

Recently, quantum dots (QDs) have often garnered significant attention and have been employed for various applications. Nevertheless, most conventional devices utilize a glass substrate and/or brittle substrate, which is not compatible with next-generation wearable electronics. A suitable method for devising conductive and flexible free-standing platforms that can be combined with various kinds of QDs is thus in great need for next-generation wearable electronics. In this work, we introduce a universal and simple method to coat QDs on carbon nanofibers (CNFs) by a dip-coating process, where many kinds of QDs can be well decorated on the surface of CNFs. As one potential application among many, QD-coated CNFs were examined for their photocatalytic applications and characterization. As a result, it was found that the best performance of CdSe QD-coated CNFs for hydrogen production was 3.8 times higher than that of only QDs with the same 1 mg of QDs. This is an early report on fabricating various kinds of QD-coated CNFs, which can be extended to a myriad set of applications.

Ge nanoparticles in SiO2 for near infrared photodetectors with high performance

In this work we prepared films of amorphous germanium nanoparticles embedded in SiO₂ deposited by magnetron sputtering on Si and quartz heated substrates at 300, 400 and 500 °C. Structure, morphology, optical, electrical and photoconduction properties of all films were investigated. The Ge concentration in the depth of the films is strongly dependent on the deposition temperature. In the films deposited at 300 °C, the Ge content is constant in the depth, while films deposited at 500 °C show a significant decrease of Ge content from interface of the film with substrate towards the film free surface. From the absorption curves we obtained the Ge band gap of 1.39 eV for 300 °C deposited films and 1.44 eV for the films deposited at 500 °C. The photocurrents are higher with more than one order of magnitude than the dark ones. The photocurrent spectra present different cutoff wavelengths depending on the deposition temperature, i.e. 1325 nm for 300 °C and 1267 nm for 500 °C. These films present good responsivities of 2.42 AW⁻¹ (52 μW incident power) at 300 °C and 0.69 AW⁻¹ (57 mW) at 500 °C and high internal quantum efficiency of ∼445% for 300 °C and ∼118% for 500 °C.

Sub-Band Gap Photodetection from the Titanium Nitride/Germanium Heterostructure

Photoexcited hot carriers through nonradiative decay offer new opportunities for harnessing longer wavelength light. Here, we have demonstrated a hot-carrier-mediated sub-band gap photodetection in germanium-based planar heterojunction devices. The planar samples that form in situ germanium/titanium nitride (Ge/TiN) interfaces are fabricated by the dc sputtering technique, and the generation of photocurrent by near-infrared (NIR) light illumination is confirmed up to 2600 nm, well exceeding the absorption limit of Ge. The photocurrent obtained with nickel contacts is 3 orders larger than that obtained without metal contacts or with gold contacts in similar structures. The specific detectivity ( D*) value for the TiN/Ge photodetector is obtained to be 6.32 × 10⁵ Jones at the sub-band gap excitation wavelength of 2000 nm without applying any bias. The superior performances of our device are attributed to the broad absorption of the TiN, the plasmonic hot carrier transfer from the TiN to Ge, and built-in potential of the TiN/Ge non-Ohmic junction, which allows efficient separation of photoexcited electron-hole pairs. Our results further support the use of TiN, which is robust and cost-effective, as an alternative to metals for NIR photodetection and photovoltaics when it forms a heterostructure with Ge.

The photoelectric response of the graphene/GeSi QDs hybrid structure

In this work, the photoelectric response properties of the graphene/GeSi QDs hybrid structure were demonstrated by measuring the I-V curve, and the incident photon-to-current conversion efficiency (IPCE). The maximal on-off ratio of the current value reaches 1500 at 10 K, due to the competition between the carrier freeze-out effect and the recombination center effect. The IPCE of the hybrid structure under different incident light indicated that the photoelectric response of hybrid structure is most sensitive to the ultraviolet light (325 nm), which is attributed to the enhanced ultraviolet absorption of graphene surface plasmon in the hybrid structure. Hence, our results represent that the graphene/GeSi QDs hybrid structure has potential application as a novel ultraviolet photoelectric device.

An Overview of the Development of Flexible Sensors

Flexible sensors that efficiently detect various stimuli relevant to specific environmental or biological species have been extensively studied due to their great potential for the Internet of Things and wearable electronics applications. The application of flexible and stretchable electronics to device-engineering technologies has enabled the fabrication of slender, lightweight, stretchable, and foldable sensors. Here, recent studies on flexible sensors for biological analytes, ions, light, and pH are outlined. In addition, contemporary studies on device structure, materials, and fabrication methods for flexible sensors are discussed, and a market overview is provided. The conclusion presents challenges and perspectives in this field.

Topological Crystalline Insulator SnTe/Si Vertical Heterostructure Photodetectors for High-Performance Near-Infrared Detection

Due to the gapless surface state and narrow bulk band gap, the light absorption of topological crystalline insulators covers a broad spectrum ranging from terahertz to infrared, revealing promising applications in new generation optoelectronic devices. To date, the photodetectors based on topological insulators generally suffer from a large dark current and a weaker photocurrent especially under the near-infrared lights, which severely limits the practical application of devices. Owing to the lower excitation energy of infrared lights, the photodetection application of topological crystalline insulators in the near-infrared region relies critically on understanding the preparation and properties of their heterostructures. Herein, we fabricate the high-quality topological crystalline insulator SnTe film/Si vertical heterostructure by a simple physical vapor deposition process. The resultant heterostructure exhibits an excellent diode characteristic, enabling the construction of high-performance near-infrared photodetectors. The built-in electric field at SnTe/Si interface enhances the absorption efficiency of near-infrared lights and greatly facilitates the separation of photogenerated carriers, making the device capable of operating as a self-driven photodetector. The as-grown SnTe film acts as the hole transport layer in heterostructure photodetectors, promoting the transport of holes to electrode and reducing electron-hole recombination effectively. These merits enable the SnTe/Si heterostructure photodetector to have a high responsivity of 2.36 AW^-1, a high detectivity of 1.54 × 10¹⁴ Jones, and a large bandwidth of 10⁴ Hz in the near-infrared wavelength, which makes the detector have a promising market in novel device applications.

Bendable Photodetector on Fibers Wrapped with Flexible Ultrathin Single Crystalline Silicon Nanomembranes

Silicon (Si) nanomembranes (NMs) enable conformal covering on complicated surfaces for novel applications. We adopt classical fibers as flexible/curved substrates and wrap them with freestanding ultrathin Si-NMs with a thickness of ∼20 nm. Intrinsic defects in single-crystalline Si-NMs provide a flow path for hydrofluoric acid (HF) to release the NM with a consecutive area of ∼0.25 cm². Such Si-NMs with ultralow flexural rigidities are transferred onto a single-mode fiber (SMF) and functionalized into bendable photodetectors, which detects the leaked light when the fiber is bent. Our demonstration exemplifies optoelectronic applications in flexible photodetector for Si-NMs in a three-dimensional (3D) geometry.

Recent progress in the preparation and application of quantum dots/graphene composite materials

Quantum dots/graphene (QDs/GR) composite materials show a distinct synergistic effect between the QDs and graphene, which has aroused vast attention toward their unique characteristics in the last few decades.

Nanostructured germanium deposited on heated substrates with enhanced photoelectric properties

Obtaining high-quality materials, based on nanocrystals, at low temperatures is one of the current challenges for opening new paths in improving and developing functional devices in nanoscale electronics and optoelectronics. Here we report a detailed investigation of the optimization of parameters for the in situ synthesis of thin films with high Ge content (50 %) into SiO₂. Crystalline Ge nanoparticles were directly formed during co-deposition of SiO₂ and Ge on substrates at 300, 400 and 500 °C. Using this approach, effects related to Ge-Ge spacing are emphasized through a significant improvement of the spatial distribution of the Ge nanoparticles and by avoiding multi-step fabrication processes or Ge loss. The influence of the preparation conditions on structural, electrical and optical properties of the fabricated nanostructures was studied by X-ray diffraction, transmission electron microscopy, electrical measurements in dark or under illumination and response time investigations. Finally, we demonstrate the feasibility of the procedure by the means of an Al/n-Si/Ge:SiO₂/ITO photodetector test structure. The structures, investigated at room temperature, show superior performance, high photoresponse gain, high responsivity (about 7 AW^-1), fast response time (0.5 µs at 4 kHz) and great optoelectronic conversion efficiency of 900% in a wide operation bandwidth, from 450 to 1300 nm. The obtained photoresponse gain and the spectral width are attributed mainly to the high Ge content packed into a SiO₂ matrix showing the direct connection between synthesis and optical properties of the tested nanostructures. Our deposition approach put in evidence the great potential of Ge nanoparticles embedded in a SiO₂ matrix for hybrid integration, as they may be employed in structures and devices individually or with other materials, hence the possibility of fabricating various heterojunctions on Si, glass or flexible substrates for future development of Si-based integrated optoelectronics.

Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions

After a decade of intensive research on two-dimensional (2D) materials inspired by the discovery of graphene, the field of 2D electronics has reached a stage with booming materials and device architectures. However, the efficient integration of 2D functional layers with three-dimensional (3D) systems remains a significant challenge, limiting device performance and circuit design. In this review, we investigate the experimental efforts in interfacing 2D layers with 3D materials and analyze the properties of the heterojunctions formed between them. The contact resistivity of metal on graphene and related 2D materials deserves special attention, while the Schottky junctions formed between metal/2D semiconductor or graphene/3D semiconductor call for careful reconsideration of the physical models describing the junction behavior. The combination of 2D and 3D semiconductors presents a form of p-n junctions that have just marked their debut. For each type of the heterojunctions, the potential applications are reviewed briefly.

High-Performance Photo-Modulated Thin-Film Transistor Based on Quantum dots/Reduced Graphene Oxide Fragment-Decorated ZnO Nanowires

In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of CdSe quantum dots and reduced graphene oxide (RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 A W-1 and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.

Solution-Processed Gold Nanorods Integrated with Graphene for Near-Infrared Photodetection via Hot Carrier Injection

Graphene-based photodetectors have attracted wide interest due to their high-speed, wide-band photodetection and potential as highly energy-efficient integrated devices. However, the inherently low-absorption cross-section and nonselective spectra response hinder its utilization as a high-performance photodetector. Here, we report a solution-processed and high-spectral-selectivity photodetector based on a gold nanorods (Au NRs)-graphene heterojunction with near-infrared (NIR) detection. Au NRs are used as a subwavelength scattering source, and nanoantennas with wide light absorption range from ultraviolet to near-infrared via tuning their geometry. Photons couple into Au NRs, exciting resonant plasmas and generating hot carriers that pump into graphene, resulting in selective NIR photodetection. A flexible NIR photodetector is also demonstrated based on this simple structure. Au NRs can achieve variable resonance frequencies by the design of different aspect ratios as nanoantennae for graphene, which promises the selective amplifying of the photoresponsivity and enables highly specific detection.

The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects

Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally sharp and clean, significant deviations from the QC rule appear and other parameters beyond the nanostructure size play a considerable role. In this work we elucidate the role of the interface on QC in Ge quantum dots (QDs) synthesized by rf-magnetron sputtering or plasma enhanced chemical vapor deposition (PECVD). Through a detailed electron energy loss spectroscopy (EELS) analysis we investigated the structural and chemical properties of QD interfaces. PECVD QDs exhibit a sharper interface compared to sputter ones, which also evidences a larger contribution of mixed Ge-oxide states. Such a difference strongly modifies the QC strength, as experimentally verified by light absorption spectroscopy. A large size-tuning of the optical bandgap and an increase in the oscillator strength occur when the interface is sharp. A spatially dependent effective mass (SPDEM) model is employed to account for the interface difference between Ge QDs, pointing out a larger reduction in the exciton effective mass in the sharper interface case. These results add new insights into the role of interfaces on confined systems, and open the route for reliable exploitation of QC effects.