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Chen Y, Wang H, Chen H, Zhang W, Pätzel M, Han B, Wang K, Xu S, Montes-García V, McCulloch I, Hecht S, Samorì P. Li Promoting Long Afterglow Organic Light-Emitting Transistor for Memory Optocoupler Module. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402515. [PMID: 38616719 DOI: 10.1002/adma.202402515] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 03/19/2024] [Indexed: 04/16/2024]
Abstract
The artificial brain is conceived as advanced intelligence technology, capable to emulate in-memory processes occurring in the human brain by integrating synaptic devices. Within this context, improving the functionality of synaptic transistors to increase information processing density in neuromorphic chips is a major challenge in this field. In this article, Li-ion migration promoting long afterglow organic light-emitting transistors, which display exceptional postsynaptic brightness of 7000 cd m-2 under low operational voltages of 10 V is presented. The postsynaptic current of 0.1 mA operating as a built-in threshold switch is implemented as a firing point in these devices. The setting-condition-triggered long afterglow is employed to drive the photoisomerization process of photochromic molecules that mimic neurotransmitter transfer in the human brain for realizing a key memory rule, that is, the transition from long-term memory to permanent memory. The combination of setting-condition-triggered long afterglow with photodiode amplifiers is also processed to emulate the human responding action after the setting-training process. Overall, the successful integration in neuromorphic computing comprising stimulus judgment, photon emission, transition, and encoding, to emulate the complicated decision tree of the human brain is demonstrated.
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Affiliation(s)
- Yusheng Chen
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Hanlin Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hu Chen
- School of Physical Sciences, Great Bay University, Dongguan, 523000, China
| | - Weimin Zhang
- Physical Sciences and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), KSC, Thuwal, 23955-6900, Saudi Arabia
| | - Michael Pätzel
- Department of Chemistry & Center for the Science of Materials Berlin, Humboldt-Universität zu Berlin, Brook-Taylor-Str. 2, 12489, Berlin, Germany
| | - Bin Han
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Kexin Wang
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | - Shunqi Xu
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
| | | | - Iain McCulloch
- Physical Sciences and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), KSC, Thuwal, 23955-6900, Saudi Arabia
- University of Oxford, Department of Chemistry, Oxford, OX1 3TA, UK
| | - Stefan Hecht
- Department of Chemistry & Center for the Science of Materials Berlin, Humboldt-Universität zu Berlin, Brook-Taylor-Str. 2, 12489, Berlin, Germany
- DWI - Leibniz Institute for Interactive Materials, Forckenbeckstr. 50, 52074, Aachen, Germany
| | - Paolo Samorì
- Université de Strasbourg, CNRS, ISIS, 8 allée Gaspard Monge, Strasbourg, 67000, France
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2
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Han MJ, Tsukruk VV. Trainable Bilingual Synaptic Functions in Bio-enabled Synaptic Transistors. ACS NANO 2023; 17:18883-18892. [PMID: 37721448 PMCID: PMC10569090 DOI: 10.1021/acsnano.3c04113] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Accepted: 09/14/2023] [Indexed: 09/19/2023]
Abstract
The signal transmission of the nervous system is regulated by neurotransmitters. Depending on the type of neurotransmitter released by presynaptic neurons, neuron cells can either be excited or inhibited. Maintaining a balance between excitatory and inhibitory synaptic responses is crucial for the nervous system's versatility, elasticity, and ability to perform parallel computing. On the way to mimic the brain's versatility and plasticity traits, creating a preprogrammed balance between excitatory and inhibitory responses is required. Despite substantial efforts to investigate the balancing of the nervous system, a complex circuit configuration has been suggested to simulate the interaction between excitatory and inhibitory synapses. As a meaningful approach, an optoelectronic synapse for balancing the excitatory and inhibitory responses assisted by light mediation is proposed here by deploying humidity-sensitive chiral nematic phases of known polysaccharide cellulose nanocrystals. The environment-induced pitch tuning changes the polarization of the helicoidal organization, affording different hysteresis effects with the subsequent excitatory and inhibitory nonvolatile behavior in the bio-electrolyte-gated transistors. By applying voltage pulses combined with stimulation of chiral light, the artificial optoelectronic synapse tunes not only synaptic functions but also learning pathways and color recognition. These multifunctional bio-based synaptic field-effect transistors exhibit potential for enhanced parallel neuromorphic computing and robot vision technology.
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Affiliation(s)
- Moon Jong Han
- Department
of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Vladimir V. Tsukruk
- School
of Materials Science and Engineering, Georgia
Institute of Technology, Atlanta, Georgia 30332, United States
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3
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Park S, Choi W, Kim SH, Lee H, Cho K. Protonated Organic Semiconductors: Origin of Water-Induced Charge-Trap Generation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303707. [PMID: 37390456 DOI: 10.1002/adma.202303707] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 05/27/2023] [Accepted: 06/26/2023] [Indexed: 07/02/2023]
Abstract
Despite dramatic improvements in the electronic characteristics of organic semiconductors, the low operational stability of organic field-effect transistors (OFETs) hinders their direct use in practical applications. Although the literature contains numerous reports on the effects of water on the operational stability of OFETs, the underlying mechanisms of trap generation induced by water remain unclear. Here, a protonation-induced trap generation of organic semiconductors is proposed as a possible origin of the operational instability in organic field-effect transistors. Spectroscopic and electronic investigation techniques combined with simulations reveal that the direct protonation of organic semiconductors by water during operation may be responsible for the trap generation induced by bias stress; this phenomenon is independent of the trap generation at an insulator surface. In addition, the same feature occurred in small-bandgap polymers with fused thiophene rings irrespective of their crystalline ordering, implying the generality of protonation induced trap generation in various polymer semiconductors with a small bandgap. The finding of the trap-generation process provides new perspectives for achieving greater operational stability of organic field-effect transistors.
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Affiliation(s)
- Sangsik Park
- Department of Chemical Engineering, Pohang University of Science and Technology, 37673, Pohang, Republic of Korea
| | - Wookjin Choi
- Department of Chemical Engineering, Pohang University of Science and Technology, 37673, Pohang, Republic of Korea
| | - Seung Hyun Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, 37673, Pohang, Republic of Korea
| | - Hansol Lee
- Department of Chemical and Biological Engineering, Gachon University, Seongnam, 13120, Republic of Korea
| | - Kilwon Cho
- Department of Chemical Engineering, Pohang University of Science and Technology, 37673, Pohang, Republic of Korea
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4
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Lee J, Jeong BH, Kamaraj E, Kim D, Kim H, Park S, Park HJ. Light-enhanced molecular polarity enabling multispectral color-cognitive memristor for neuromorphic visual system. Nat Commun 2023; 14:5775. [PMID: 37723149 PMCID: PMC10507016 DOI: 10.1038/s41467-023-41419-y] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Accepted: 09/01/2023] [Indexed: 09/20/2023] Open
Abstract
An optoelectronic synapse having a multispectral color-discriminating ability is an essential prerequisite to emulate the human retina for realizing a neuromorphic visual system. Several studies based on the three-terminal transistor architecture have shown its feasibility; however, its implementation with a two-terminal memristor architecture, advantageous to achieving high integration density as a simple crossbar array for an ultra-high-resolution vision chip, remains a challenge. Furthermore, regardless of the architecture, it requires specific material combinations to exhibit the photo-synaptic functionalities, and thus its integration into various systems is limited. Here, we suggest an approach that can universally introduce a color-discriminating synaptic functionality into a two-terminal memristor irrespective of the kinds of switching medium. This is possible by simply introducing the molecular interlayer with long-lasting photo-enhanced dipoles that can adjust the resistance of the memristor at the light-irradiation. We also propose the molecular design principle that can afford this feature. The optoelectronic synapse array having a color-discriminating functionality is confirmed to improve the inference accuracy of the convolutional neural network for the colorful image recognition tasks through a visual pre-processing. Additionally, the wavelength-dependent optoelectronic synapse can also be leveraged in the design of a light-programmable reservoir computing system.
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Affiliation(s)
- Jongmin Lee
- Department of Organic and Nano Engineering, Hanyang University, Seoul, 04763, Republic of Korea
- Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Republic of Korea
| | - Bum Ho Jeong
- Department of Organic and Nano Engineering, Hanyang University, Seoul, 04763, Republic of Korea
- Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Republic of Korea
| | - Eswaran Kamaraj
- Department of Chemistry, Kongju National University, Kongju, 32588, Republic of Korea
| | - Dohyung Kim
- Department of Organic and Nano Engineering, Hanyang University, Seoul, 04763, Republic of Korea
- Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Republic of Korea
| | - Hakjun Kim
- Department of Organic and Nano Engineering, Hanyang University, Seoul, 04763, Republic of Korea
- Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Republic of Korea
| | - Sanghyuk Park
- Department of Chemistry, Kongju National University, Kongju, 32588, Republic of Korea.
| | - Hui Joon Park
- Department of Organic and Nano Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
- Human-Tech Convergence Program, Hanyang University, Seoul, 04763, Republic of Korea.
- Hanyang Institute of Smart Semiconductor, Seoul, 04763, Republic of Korea.
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5
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Yang Z, Guo C, Qin L, Hu JT, Luan P, Liang Z, Li X, Ding H, Wang DK, Zhang T, Zhu Q, Lu ZH. Enhanced Organic Thin-Film Transistor Stability by Preventing MoO 3 Diffusion with Metal/MoO 3/Organic Multilayered Interface Source-Drain Contact. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1704-1717. [PMID: 36541611 DOI: 10.1021/acsami.2c18780] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The source-drain electrode with a MoO3 interfacial modification layer (IML) is considered the most promising method to solve electrical contact issues impeding organic thin-film transistors (OTFTs) from commercialization. However, this method raises many concerns because MoO3 might diffuse into organic materials, which causes device instability. In this work, we observed a significant device stability degradation by damaging on/off switching performance caused by MoO3 diffusion. To prevent the MoO3 diffusion, a source-drain electrode with a multilayered interface contact (MIC) consisting of a top-down stack of metal, MoO3 IML, and organic buffer layer (OBL) is proposed. In the MIC device, the MoO3 IML serves well for its intended functions of reducing contact resistance and suppressing minority carrier injection to the OTFT channel. The inclusion of OBL to the MIC helps block MoO3 diffusion and thereby leads to better device stability and an increased on/off ratio. Through combinations with several organic compounds as a buffer layer, the MoO3 diffusion related electrical behaviors of OTFTs are systematically studied. Key parameters related to MoO3 diffusion such as the Fick coefficient and bias-stress stability such as carrier trapping time are extracted from numerical device analysis. Finally, we summarize a general rule of material selection for making robust source-drain contact.
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Affiliation(s)
- Zhenxin Yang
- Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China
| | - Chunhua Guo
- Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China
| | - Lingping Qin
- Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China
| | - Jun-Tao Hu
- Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China
| | - Pengyan Luan
- Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China
| | - Zheng Liang
- Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China
| | - Xiaoliang Li
- Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China
| | - Huaiyi Ding
- Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China
| | - Deng-Ke Wang
- Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China
- National Center for International Research on Photoelectric and Energy Materials, Yunnan University, Kunming650504, China
| | - Tao Zhang
- Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China
| | - Qiang Zhu
- Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China
- National Center for International Research on Photoelectric and Energy Materials, Yunnan University, Kunming650504, China
| | - Zheng-Hong Lu
- Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China
- National Center for International Research on Photoelectric and Energy Materials, Yunnan University, Kunming650504, China
- Department of Materials Science and Engineering, University of Toronto, TorontoM5S 3E4, Canada
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6
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Indium(III) and organotin(IV) 2-(methoxycarbonyl)benzenethiolates: Synthesis, structure and properties. J Mol Struct 2022. [DOI: 10.1016/j.molstruc.2022.132801] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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7
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Yang Y, Sun H, Zhao X, Xian D, Han X, Wang B, Wang S, Zhang M, Zhang C, Ye X, Ni Y, Tong Y, Tang Q, Liu Y. High-Mobility Fungus-Triggered Biodegradable Ultraflexible Organic Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105125. [PMID: 35257518 PMCID: PMC9069197 DOI: 10.1002/advs.202105125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2021] [Revised: 02/04/2022] [Indexed: 05/31/2023]
Abstract
Biodegradable organic field-effect transistors (OFETs) have drawn tremendous attention for potential applications such as green electronic skins, degradable flexible displays, and novel implantable devices. However, it remains a huge challenge to simultaneously achieve high mobility, stable operation and controllable biodegradation of OFETs, because most of the widely used biodegradable insulating materials contain large amounts of hydrophilic groups. Herein, it is firstly proposed fungal-degradation ultraflexible OFETs based on the crosslinked dextran (C-dextran) as dielectric layer. The crosslinking strategy effectively eliminates polar hydrophilic groups and improves water and solvent resistance of dextran dielectric layer. The device with spin-coated 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor and C-dextran dielectric exhibits the highest mobility up to 7.72 cm2 V-1 s-1 , which is higher than all the reported degradable OFETs. Additionally, the device still maintains high performance regardless of in an environment humidity up to 80% or under the extreme bending radius of 0.0125 mm. After completion of their mission, the device can be controllably biodegraded by fungi without any adverse environmental effects, promoting the natural ecological cycles with the concepts of "From nature, for nature". This work opens up a new avenue for realizing high-performance biodegradable OFETs, and advances the process of the "green" electrical devices in practical applications.
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Affiliation(s)
- Yahan Yang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Hongying Sun
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Xiaoli Zhao
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Da Xian
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Xu Han
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Bin Wang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Shuya Wang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Mingxin Zhang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Cong Zhang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Xiaolin Ye
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Yanping Ni
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Yanhong Tong
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Qingxin Tang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Researchand Key Lab of UV‐Emitting Materials and Technology of Ministry of EducationNortheast Normal University5268 Renmin StreetChangchun130024China
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8
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Selectivity of Relative Humidity Using a CP Based on S-Block Metal Ions. SENSORS 2022; 22:s22041664. [PMID: 35214565 PMCID: PMC8875507 DOI: 10.3390/s22041664] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/04/2021] [Revised: 12/29/2021] [Accepted: 01/05/2022] [Indexed: 12/03/2022]
Abstract
Herein, we present the syntheses of a novel coordination polymer (CP) based on the perylene-3,4,9,10-tetracarboxylate (pery) linkers and sodium metal ions. We have chosen sodium metal center with the aim of surmising the effect that the modification of the metal ion may have on the relative humidity (RH) experimental measurements of the material. We confirm the role of the ions in the functionalization of the deposited layer by modifying their selectivity towards moisture content, paving the way to the generation of sensitive and selective chemical sensors.
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9
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Mandal S, Mandal A, Verma SP, Goswami DK. Interface engineering of moisture-induced ionic albumen dielectric layers through self-crosslinking of cysteine amino acids for low voltage, high-performance organic field-effect transistors. NANOSCALE 2021; 13:11913-11920. [PMID: 34190295 DOI: 10.1039/d1nr02759j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The interface roughness between the semiconducting and dielectric layers of organic field-effect transistors (OFETs) plays a crucial role in the charge transport mechanism through the device. Here we report the interface engineering of a moisture induced ionic albumen material through systematic control of the temperature-dependent self-crosslinking of cysteine amino acids in the dielectric layer. The evolution of the surface morphologies of albumen and pentacene semiconducting films has been studied to achieve a smooth interface for enhanced charge transport. A structural transition of pentacene films from crystalline dendrite to amorphous was induced by the higher surface roughness of the albumen film. The devices showed a high transconductance of 11.68 μS at a lower threshold voltage of -0.9 V.
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Affiliation(s)
- Suman Mandal
- Organic Electronics Laboratory, Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur - 721302, India.
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10
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Guo E, Wu Z, Darbandy G, Xing S, Wang SJ, Tahn A, Göbel M, Kloes A, Leo K, Kleemann H. Vertical organic permeable dual-base transistors for logic circuits. Nat Commun 2020; 11:4725. [PMID: 32948770 PMCID: PMC7501854 DOI: 10.1038/s41467-020-18576-5] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2020] [Accepted: 08/21/2020] [Indexed: 11/30/2022] Open
Abstract
The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. However, incorporating a dual gate/base structure into an ultra-short channel vertical architecture represents a substantial challenge. Here, we realize a device concept of vertical organic permeable dual-base transistors, where the dual base electrodes can be used to tune the threshold voltages and change the on-currents. The detailed operation mechanisms are investigated by calibrated TCAD simulations. Finally, power-efficient logic circuits, e.g. inverter, NAND/AND computation functions are demonstrated with one single device operating at supply voltages of <2.0 V. We believe that this work offers a compact and technologically simple hardware platform with excellent application potential for vertical-channel organic transistors in complex logic circuits. The development of vertical organic transistors with controllable threshold voltage is highly desirable for integrated circuit-based displays and sensors. Here, the authors report vertical organic permeable dual-based transistors with independently tunable on-currents and threshold voltages.
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Affiliation(s)
- Erjuan Guo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Zhongbin Wu
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany. .,Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 710072, Xi'an, China.
| | - Ghader Darbandy
- NanoP, TH Mittelhessen, University of Applied Sciences, 35390, Giessen, Germany
| | - Shen Xing
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Shu-Jen Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
| | - Alexander Tahn
- Dresden Center for Nanoanalysis (DCN), Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062, Dresden, Germany
| | - Michael Göbel
- Leibniz-Institut für Polymerforschung Dresden e.V. (IPF), 01069, Dresden, Germany
| | - Alexander Kloes
- NanoP, TH Mittelhessen, University of Applied Sciences, 35390, Giessen, Germany
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany.
| | - Hans Kleemann
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01062, Dresden, Germany
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11
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Mandal S, Mandal A, Jana G, Mallik S, Roy S, Ghosh A, Chattaraj PK, Goswami DK. Low Operating Voltage Organic Field-Effect Transistors with Gelatin as a Moisture-Induced Ionic Dielectric Layer: The Issues of High Carrier Mobility. ACS APPLIED MATERIALS & INTERFACES 2020; 12:19727-19736. [PMID: 32233358 DOI: 10.1021/acsami.0c01499] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We have developed low-voltage (<2 V) flexible organic field-effect transistors (OFETs) with high carrier mobility using gelatin as a moisture-induced ionic gate dielectric system. Ionic concentration in the gelatin layer depends on the relative humidity condition during the measurement. The capacitance of the dielectric layer used for the calculation of field-effect carrier mobility for the OFETs crucially depends on the frequency at which the capacitance was measured. The results of frequency-dependent gate capacitance together with the anomalous bias-stress effect have been used to determine the exact frequency at which the carrier mobility should be calculated. The observed carrier mobility of the devices is 0.33 cm2/Vs with the capacitance measured at frequency 20 mHz. It can be overestimated to 14 cm2/Vs with the capacitance measured at 100 kHz. The devices can be used as highly sensitive humidity sensors. About three orders of magnitude variation in device current have been observed on the changes in relative humidity (RH) levels from 10 to 80%. The devices show a fast response with a response and recovery times of ∼100 and ∼110 ms, respectively. The devices are flexible up to a 5 mm bending radius.
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Affiliation(s)
- Suman Mandal
- Organic Electronics Laboratory, Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
| | - Ajoy Mandal
- Organic Electronics Laboratory, Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
| | - Gourhari Jana
- Department of Chemistry and Center for Theoretical Studies, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
| | - Samik Mallik
- School of Nanoscience and Technology, Indian Institute of Technology Kharagpur, Kharapur 721302, India
| | - Satyajit Roy
- Organic Electronics Laboratory, Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
| | - Arnab Ghosh
- Organic Electronics Laboratory, Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
| | - Pratim Kumar Chattaraj
- Department of Chemistry and Center for Theoretical Studies, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
- Department of Chemistry, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India
| | - Dipak K Goswami
- Organic Electronics Laboratory, Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
- School of Nanoscience and Technology, Indian Institute of Technology Kharagpur, Kharapur 721302, India
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12
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Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors. APPLIED SCIENCES-BASEL 2018. [DOI: 10.3390/app9010002] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.
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Management of transition dipoles in organic hole-transporting materials under solar irradiation for perovskite solar cells. Nat Commun 2018; 9:4537. [PMID: 30382104 PMCID: PMC6208393 DOI: 10.1038/s41467-018-06998-1] [Citation(s) in RCA: 38] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2018] [Accepted: 10/10/2018] [Indexed: 11/29/2022] Open
Abstract
In organic hole-transporting material (HTM)-based p−i−n planar perovskite solar cells, which have simple and low-temperature processibility feasible to flexible devices, the incident light has to pass through the HTM before reaching the perovskite layer. Therefore, photo-excited state of organic HTM could become important during the solar cell operation, but this feature has not usually been considered for the HTM design. Here, we prove that enhancing their property at their photo-excited states, especially their transition dipole moments, can be a methodology to develop high efficiency p−i−n perovskite solar cells. The organic HTMs are designed to have high transition dipole moments at the excited states and simultaneously to preserve those property during the solar cell operation by their extended lifetimes through the excited-state intramolecular proton transfer process, consequently reducing the charge recombination and improving extraction properties of devices. Their UV-filtering ability is also beneficial to enhance the photostability of devices. In perovskite solar cells, the excited state property of hole-transport layer is not usually considered for the devices. Here the authors design organic hole-transport materials with high transition dipoles having extended lifetime at the excited states to improve the charge extraction of the devices.
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Effect of solvent induced dielectric property modulation of poly(methyl methacrylate) insulator on the electrical and photosensing behaviour of p-channel organic transistors. POLYMER 2017. [DOI: 10.1016/j.polymer.2017.09.065] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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Huang W, Zhuang X, Melkonyan FS, Wang B, Zeng L, Wang G, Han S, Bedzyk MJ, Yu J, Marks TJ, Facchetti A. UV-Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO 2 Detection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1701706. [PMID: 28614602 DOI: 10.1002/adma.201701706] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2017] [Indexed: 06/07/2023]
Abstract
A new type of nitrogen dioxide (NO2 ) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low-cost UV-ozone (UVO)-treated polymeric gate dielectric is reported here. The NO2 sensitivity of these TFTs with the dielectric surface UVO treatment is ≈400× greater for [NO2 ] = 30 ppm than for those without UVO treatment. Importantly, the sensitivity is ≈50× greater for [NO2 ] = 1 ppm with the UVO-treated TFTs, and a limit of detection of ≈400 ppb is achieved with this sensing platform. The morphology, microstructure, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, revealing that the enhanced sensing performance originates from UVO-derived hydroxylated species on the dielectric surface and not from chemical reactions between NO2 and the dielectric/semiconductor components. This work demonstrates that dielectric/semiconductor interface engineering is essential for readily manufacturable high-performance TFT-based gas sensors.
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Affiliation(s)
- Wei Huang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Xinming Zhuang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China
| | - Ferdinand S Melkonyan
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Binghao Wang
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Li Zeng
- Department of Materials Science and Engineering and Applied Physics Program, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Gang Wang
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Shijiao Han
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China
| | - Michael J Bedzyk
- Department of Materials Science and Engineering and Applied Physics Program, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
| | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, China
| | - Tobin J Marks
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Antonio Facchetti
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
- Flexterra Inc., 8025 Lamon Avenue, Skokie, IL, 60077, USA
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Kim S, Ha T, Yoo S, Ka JW, Kim J, Won JC, Choi DH, Jang KS, Kim YH. Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors. Phys Chem Chem Phys 2017; 19:15521-15529. [DOI: 10.1039/c7cp01535f] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
Abstract
We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST).
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Affiliation(s)
- Sohee Kim
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
| | - Taewook Ha
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
- Department of Chemistry
| | - Sungmi Yoo
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
| | - Jae-Won Ka
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
| | - Jinsoo Kim
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
- KRICT School
| | - Jong Chan Won
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
- KRICT School
| | - Dong Hoon Choi
- Department of Chemistry
- Korea University
- Seoul 02841
- Republic of Korea
| | - Kwang-Suk Jang
- Department of Chemical Engineering and Research Center of Chemical Technology
- Hankyong National University
- Anseong 17579
- Republic of Korea
| | - Yun Ho Kim
- Division of Advanced Materials
- Korea Research Institute of Chemical Technology
- Daejeon 34114
- Republic of Korea
- KRICT School
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Han S, Yang X, Zhuang X, Yu J, Li L. Tailoring the Dielectric Layer Structure for Enhanced Performance of Organic Field-Effect Transistors: The Use of a Sandwiched Polar Dielectric Layer. MATERIALS 2016; 9:ma9070545. [PMID: 28773667 PMCID: PMC5456942 DOI: 10.3390/ma9070545] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/15/2016] [Revised: 05/22/2016] [Accepted: 07/01/2016] [Indexed: 11/16/2022]
Abstract
To investigate the origins of hydroxyl groups in a polymeric dielectric and its applications in organic field-effect transistors (OFETs), a polar polymer layer was inserted between two polymethyl methacrylate (PMMA) dielectric layers, and its effect on the performance as an organic field-effect transistor (OFET) was studied. The OFETs with a sandwiched dielectric layer of poly(vinyl alcohol) (PVA) or poly(4-vinylphenol) (PVP) containing hydroxyl groups had shown enhanced characteristics compared to those with only PMMA layers. The field-effect mobility had been raised more than 10 times in n-type devices (three times in the p-type one), and the threshold voltage had been lowered almost eight times in p-type devices (two times in the n-type). The on-off ratio of two kinds of devices had been enhanced by almost two orders of magnitude. This was attributed to the orientation of hydroxyl groups from disordered to perpendicular to the substrate under gate-applied voltage bias, and additional charges would be induced by this polarization at the interface between the semiconductor and dielectrics, contributing to the accumulation of charge transfer.
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Affiliation(s)
- Shijiao Han
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.
| | - Xin Yang
- Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China.
| | - Xinming Zhuang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.
| | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China.
- Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China.
| | - Lu Li
- Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China.
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