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Cheng Z, Xu Y, Fei B. Noble metal-free ternary cobalt-nickel phosphides for enhanced photocatalytic dye-sensitized hydrogen evolution and catalytic mechanism investigation. RSC Adv 2023; 13:23638-23647. [PMID: 37555084 PMCID: PMC10405047 DOI: 10.1039/d3ra04235a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/24/2023] [Accepted: 07/19/2023] [Indexed: 08/10/2023] Open
Abstract
Transition metal phosphides have emerged as compelling alternatives to noble metal catalysts for photocatalytic hydrogen evolution, owing to their high efficiency, stability, ease of preparation, and low-cost-effectiveness. This study investigates a series of binary and ternary phosphides predominantly composed of cobalt and nickel employed for photocatalytic dye-sensitized hydrogen evolution. Under the optimal dye-to-catalyst mass ratio, CoNiP exhibited the highest hydrogen evolution activity (12.96 mmol g-1 h-1), demonstrating more significant and satisfactory performance than a variety of other reported materials. This can be attributed to the high conductivity and low hydrogen evolution overpotential of phosphides, which result from their metallic characteristics and the presence of free electrons, which promote efficient electron transfer between the catalyst and sensitizer. Density functional theory calculations revealed that the cobalt incorporation into the binary phosphides causes a negative shift in the average d-band center for CoNiP, weakening the adsorption affinity of the catalyst towards H2 molecules, thus effectively improving the hydrogen evolution rate compared to the pure binary phosphides. This work provides valuable insights for the development of low-cost and high-performance ternary phosphide photocatalysts.
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Affiliation(s)
- Zhixing Cheng
- Institute of Semiconductors, Guangdong Academy of Sciences Guangzhou 510070 P. R. China
- School of Fashion & Textiles, The Hong Kong Polytechnic University Hong Kong 100872 P. R. China
| | - Yiqin Xu
- Institute of Semiconductors, Guangdong Academy of Sciences Guangzhou 510070 P. R. China
| | - Bin Fei
- School of Fashion & Textiles, The Hong Kong Polytechnic University Hong Kong 100872 P. R. China
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2
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Liang L, Zhang H, Li T, Li W, Gao J, Zhang H, Guo M, Gao S, He Z, Liu F, Ning C, Cao H, Yuan G, Liu C. Addressing the Conflict between Mobility and Stability in Oxide Thin-film Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300373. [PMID: 36935362 DOI: 10.1002/advs.202300373] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 02/28/2023] [Indexed: 05/18/2023]
Abstract
Amorphous oxide semiconductor thin-film transistors (AOS TFTs) are ever-increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility-stability conflict. The charge transport layer (CTL) is made of amorphous In-rich InSnZnO, which favors big average effective coordination number for all cations and more edge-shared structures for better charge transport. Praseodymium-doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo-generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm2 V-1 s-1 ) and small negative-bias-illumination-stress/positive-bias-temperature-stress voltage shifts (-1.64/0.76 V). The design concept provides a promising route to address the mobility-stability conflict for high-end displays.
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Affiliation(s)
- Lingyan Liang
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Hengbo Zhang
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Ting Li
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Wanfa Li
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Junhua Gao
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Hongliang Zhang
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Min Guo
- State Key Lab of Opto-Electronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
| | - Shangpeng Gao
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Zirui He
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Fengjuan Liu
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Ce Ning
- BOE Technology Group Co. Ltd., Beijing, 100176, P. R. China
| | - Hongtao Cao
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Guangcai Yuan
- BOE Technology Group Co. Ltd., Beijing, 100176, P. R. China
| | - Chuan Liu
- State Key Lab of Opto-Electronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
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3
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Xu H, Xu M, Li M, Chen Z, Zou J, Wu W, Qiao X, Tao H, Wang L, Ning H, Ma D, Peng J. Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping. ACS APPLIED MATERIALS & INTERFACES 2019; 11:5232-5239. [PMID: 30640426 DOI: 10.1021/acsami.8b18329] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Praseodymium-doped indium zinc oxide (PrIZO) has been employed as the channel layer of thin-film transistors (TFTs). The TFTs with Pr doping exhibited a remarkable suppression of the light-induced instability. A negligible photo-response and remarkable enhancement in negative gate bias stress under illumination (NBIS) were achieved in the PrIZO-TFTs. Meanwhile, the PrIZO-TFTs showed reasonable characteristics with a high-field-effect mobility of 26.3 cm2/V s, SS value of 0.28 V/decade, and Ion/ Ioff ratio of 108. X-ray photoelectron spectroscopy, microwave photoconductivity decay, and photoluminescence spectra were employed to analyze the effects of the Pr concentrations on the performance of PrIZO-TFTs. We disclosed that acceptor-like trap states induced by Pr ions might lead to the suppression of photo-induced carrier in conduction band, which is a new strategy for improving illumination stability of amorphous oxide semiconductors. Finally, a prototype of fully transparent AMOLED display was successfully fabricated to demonstrate the potential of Pr-doping TFTs applied in transparent devices.
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Affiliation(s)
- Hua Xu
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
- Guangzhou New Vision Optoelectronic Corporation, Limited , Guangzhou 510530 , China
| | - Miao Xu
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
- Guangzhou New Vision Optoelectronic Corporation, Limited , Guangzhou 510530 , China
| | - Min Li
- Guangzhou New Vision Optoelectronic Corporation, Limited , Guangzhou 510530 , China
| | - Zikai Chen
- Guangzhou New Vision Optoelectronic Corporation, Limited , Guangzhou 510530 , China
| | - Jianhua Zou
- Guangzhou New Vision Optoelectronic Corporation, Limited , Guangzhou 510530 , China
| | - Weijing Wu
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
| | - Xianfeng Qiao
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
| | - Hong Tao
- Guangzhou New Vision Optoelectronic Corporation, Limited , Guangzhou 510530 , China
| | - Lei Wang
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
- Guangzhou New Vision Optoelectronic Corporation, Limited , Guangzhou 510530 , China
| | - Honglong Ning
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
| | - Dongge Ma
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
| | - Junbiao Peng
- State Key Laboratory of Luminescent Materials and Devices , South China University of Technology , Guangzhou 510640 , China
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4
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Huang G, Duan L, Zhao Y, Zhang Y, Dong G, Zhang D, Qiu Y. Synergistic effects of water addition and step heating on the formation of solution-processed zinc tin oxide thin films: towards high-mobility polycrystalline transistors. NANOTECHNOLOGY 2016; 27:465204. [PMID: 27758975 DOI: 10.1088/0957-4484/27/46/465204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Thin-film transistors (TFTs) with high mobility and good uniformity are attractive for next-generation flat panel displays. In this work, solution-processed polycrystalline zinc tin oxide (ZTO) thin film with well-ordered microstructure is prepared, thanks to the synergistic effect of water addition and step heating. The step heating treatment other than direct annealing induces crystallization, while adequate water added to precursor solution further facilitates alloying and densification process. The optimal polycrystalline ZTO film is free of hierarchical sublayers, and featured with an increased amount of ternary phases, as well as a decreased fraction of oxygen vacancies and hydroxides. TFT devices based on such an active layer exhibit a remarkable field-effect mobility of 52.5 cm2 V-1 s-1, a current on/off ratio of 2 × 105, a threshold voltage of 2.32 V, and a subthreshold swing of 0.36 V dec-1. Our work offers a facile method towards high-performance solution-processed polycrystalline metal oxide TFTs.
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Affiliation(s)
- Genmao Huang
- Key Lab of Organic Optoelectronics & Molecular Engineering, Department of Chemistry, Tsinghua University, Beijing, 100084, People's Republic of China. Kunshan New Flat Panel Display Technology Center Co., Ltd., Kunshan, 215300, People's Republic of China
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Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process. Sci Rep 2016; 6:31991. [PMID: 27553518 PMCID: PMC4995484 DOI: 10.1038/srep31991] [Citation(s) in RCA: 35] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2016] [Accepted: 07/29/2016] [Indexed: 11/21/2022] Open
Abstract
We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and high sensitivity. The photo-TFTs are inverted-staggered bottom-gate type indium-gallium-zinc-oxide (IGZO) TFTs fabricated using atomic layer deposition (ALD)-derived Al2O3 gate insulators. The surfaces of the Al2O3 gate insulators are damaged by ion bombardment during the deposition of the IGZO channel layers by sputtering and the damage results in the hysteresis behavior of the photo-TFTs. The hysteresis loops broaden as the deposition power density increases. This implies that we can easily control the amount of the interface trap sites and/or trap sites in the gate insulator near the interface. The photo-TFTs with large hysteresis-related defects have high S/N ratio and fast recovery in spite of the low operation voltages including a drain voltage of 1 V, positive gate bias pulse voltage of 3 V, and gate voltage pulse width of 3 V (0 to 3 V). In addition, through the hysteresis-related defect-generating process, we have achieved a high responsivity since the bulk defects that can be photo-excited and eject electrons also increase with increasing deposition power density.
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6
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Kim YK, Ahn CH, Yun MG, Cho SW, Kang WJ, Cho HK. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness. Sci Rep 2016; 6:26287. [PMID: 27198067 PMCID: PMC4873798 DOI: 10.1038/srep26287] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2016] [Accepted: 04/27/2016] [Indexed: 11/09/2022] Open
Abstract
In this paper, a simple and controllable “wet pulse annealing” technique for the fabrication of flexible amorphous InGaZnO thin film transistors (a-IGZO TFTs) processed at low temperature (150 °C) by using scalable vacuum deposition is proposed. This method entailed the quick injection of water vapor for 0.1 s and purge treatment in dry ambient in one cycle; the supply content of water vapor was simply controlled by the number of pulse repetitions. The electrical transport characteristics revealed a remarkable performance of the a-IGZO TFTs prepared at the maximum process temperature of 150 °C (field-effect mobility of 13.3 cm2 V−1 s−1; Ion/Ioff ratio ≈ 108; reduced I-V hysteresis), comparable to that of a-IGZO TFTs annealed at 350 °C in dry ambient. Upon analysis of the angle-resolved x-ray photoelectron spectroscopy, the good performance was attributed to the effective suppression of the formation of hydroxide and oxygen-related defects. Finally, by using the wet pulse annealing process, we fabricated, on a plastic substrate, an ultrathin flexible a-IGZO TFT with good electrical and bending performances.
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Affiliation(s)
- Ye Kyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Cheol Hyoun Ahn
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Myeong Gu Yun
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Sung Woon Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Won Jun Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Hyung Koun Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea
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7
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Kim DE, Cho SW, Kim B, Shin JH, Kang WJ, Yun MG, Beak SK, Cho HK, Kim YH, Kim Y. Chemically robust solution-processed indium zinc oxide thin film transistors fabricated by back channel wet-etched Mo electrodes. RSC Adv 2016. [DOI: 10.1039/c6ra09684k] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023] Open
Abstract
We designed a systematic strategy for a chemically robust solution-processed IZO thin film transistor with back channel wet-etched Mo electrodes, which showed superior electrical performance and uniformity.
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Affiliation(s)
- Da Eun Kim
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Sung Woon Cho
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Bora Kim
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Jae Hui Shin
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Won Jun Kang
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Myeong Gu Yun
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Seung Ki Beak
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Hyung Koun Cho
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
| | - Yunseok Kim
- School of Advanced Materials Science and Engineering
- Sungkyunkwan University
- Suwon
- Republic of Korea
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