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Liang L, Zhang H, Li T, Li W, Gao J, Zhang H, Guo M, Gao S, He Z, Liu F, Ning C, Cao H, Yuan G, Liu C. Addressing the Conflict between Mobility and Stability in Oxide Thin-film Transistors. Adv Sci (Weinh) 2023; 10:e2300373. [PMID: 36935362 DOI: 10.1002/advs.202300373] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 02/28/2023] [Indexed: 05/18/2023]
Abstract
Amorphous oxide semiconductor thin-film transistors (AOS TFTs) are ever-increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility-stability conflict. The charge transport layer (CTL) is made of amorphous In-rich InSnZnO, which favors big average effective coordination number for all cations and more edge-shared structures for better charge transport. Praseodymium-doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo-generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm2 V-1 s-1 ) and small negative-bias-illumination-stress/positive-bias-temperature-stress voltage shifts (-1.64/0.76 V). The design concept provides a promising route to address the mobility-stability conflict for high-end displays.
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Affiliation(s)
- Lingyan Liang
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Hengbo Zhang
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Ting Li
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Wanfa Li
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Junhua Gao
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Hongliang Zhang
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Min Guo
- State Key Lab of Opto-Electronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
| | - Shangpeng Gao
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Zirui He
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Fengjuan Liu
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
| | - Ce Ning
- BOE Technology Group Co. Ltd., Beijing, 100176, P. R. China
| | - Hongtao Cao
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Guangcai Yuan
- BOE Technology Group Co. Ltd., Beijing, 100176, P. R. China
| | - Chuan Liu
- State Key Lab of Opto-Electronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
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2
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Cao B, Grass T, Gazzano O, Patel KA, Hu J, Müller M, Huber-Loyola T, Anzi L, Watanabe K, Taniguchi T, Newell DB, Gullans M, Sordan R, Hafezi M, Solomon GS. Chiral Transport of Hot Carriers in Graphene in the Quantum Hall Regime. ACS Nano 2022; 16:18200-18209. [PMID: 36326218 PMCID: PMC9706666 DOI: 10.1021/acsnano.2c05502] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/05/2022] [Accepted: 09/26/2022] [Indexed: 06/16/2023]
Abstract
Photocurrent (PC) measurements can reveal the relaxation dynamics of photoexcited hot carriers beyond the linear response of conventional transport experiments, a regime important for carrier multiplication. Here, we study the relaxation of carriers in graphene in the quantum Hall regime by accurately measuring the PC signal and modeling the data using optical Bloch equations. Our results lead to a unified understanding of the relaxation processes in graphene over different magnetic field strength regimes, which is governed by the interplay of Coulomb interactions and interactions with acoustic and optical phonons. Our data provide clear indications of a sizable carrier multiplication. Moreover, the oscillation pattern and the saturation behavior of PC are manifestations of not only the chiral transport properties of carriers in the quantum Hall regime but also the chirality change at the Dirac point, a characteristic feature of a relativistic quantum Hall effect.
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Affiliation(s)
- Bin Cao
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
| | - Tobias Grass
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
- ICFO-Institut
de Ciencies Fotoniques, The Barcelona Institute
of Science and Technology, Castelldefels
(Barcelona) 08860, Spain
- DIPC—Donostia
International Physics Center, San
Sebastian20018, Spain
- Ikerbasque—Basque Foundation for Science, Bilbao48013, Spain
| | - Olivier Gazzano
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
| | | | - Jiuning Hu
- National
Institute of Standards and Technology, Gaithersburg, Maryland20878, United States
| | - Markus Müller
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
| | - Tobias Huber-Loyola
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
| | - Luca Anzi
- L-NESS,
Department of Physics, Politecnico di Milano, Via Anzani 42, 22100Como, Italy
| | - Kenji Watanabe
- National
Institute for Materials Science, 1-1 Namiki, 305-0044Tsukuba, Japan
| | - Takashi Taniguchi
- National
Institute for Materials Science, 1-1 Namiki, 305-0044Tsukuba, Japan
| | - David B. Newell
- National
Institute of Standards and Technology, Gaithersburg, Maryland20878, United States
| | - Michael Gullans
- Joint
Center for Quantum Information and Computer Science, NIST/University of Maryland, College
Park, Maryland20742, United States
| | - Roman Sordan
- L-NESS,
Department of Physics, Politecnico di Milano, Via Anzani 42, 22100Como, Italy
| | - Mohammad Hafezi
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
- IREAP, University
of Maryland, College Park, Maryland20742, United States
| | - Glenn S. Solomon
- Joint
Quantum Institute, NIST/University of Maryland, College Park, Maryland20742, United States
- Department
of Physics and IPAS, University of Adelaide, Adelaide, South Australia5005, Australia
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3
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Herrfurth O, Krüger E, Blaurock S, Krautscheid H, Grundmann M. Hot-phonon effects in photo-excited wide-bandgap semiconductors. J Phys Condens Matter 2021; 33:205701. [PMID: 33761467 DOI: 10.1088/1361-648x/abf19b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2020] [Accepted: 03/24/2021] [Indexed: 06/12/2023]
Abstract
Carrier and lattice relaxation after optical excitation is simulated for the prototypical wide-bandgap semiconductors CuI and ZnO. Transient temperature dynamics of electrons, holes as well as longitudinal-optic (LO), transverse-optic (TO) and acoustic phonons are distinguished. Carrier-LO-phonon interaction constitutes the dominant energy-loss channel as expected for polar semiconductors and hot-phonon effects are observed for strong optical excitation. Our results support the findings of recent time-resolved optical spectroscopy experiments.
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Affiliation(s)
- O Herrfurth
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, Leipzig, Germany
| | - E Krüger
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, Leipzig, Germany
| | - S Blaurock
- Institute of Inorganic Chemistry, Universität Leipzig, Leipzig, Germany
| | - H Krautscheid
- Institute of Inorganic Chemistry, Universität Leipzig, Leipzig, Germany
| | - M Grundmann
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, Leipzig, Germany
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4
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Hintermayr V, Polavarapu L, Urban AS, Feldmann J. Accelerated Carrier Relaxation through Reduced Coulomb Screening in Two-Dimensional Halide Perovskite Nanoplatelets. ACS Nano 2018; 12:10151-10158. [PMID: 30296055 PMCID: PMC6202634 DOI: 10.1021/acsnano.8b05029] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
For high-speed optoelectronic applications relying on fast relaxation or energy-transfer mechanisms, understanding of carrier relaxation and recombination dynamics is critical. Here, we compare the differences in photoexcited carrier dynamics in two-dimensional (2D) and quasi-three-dimensional (quasi-3D) colloidal methylammonium lead iodide perovskite nanoplatelets via differential transmission spectroscopy. We find that the cooling of excited electron-hole pairs by phonon emission progresses much faster and is intensity-independent in the 2D case. This is due to the low dielectric surrounding of the thin perovskite layers, for which the Fröhlich interaction is screened less efficiently leading to higher and less density-dependent carrier-phonon scattering rates. In addition, rapid dissipation of heat into the surrounding occurs due to the high surface-to-volume ratio. Furthermore, we observe a subpicosecond dissociation of resonantly excited 1s excitons in the quasi-3D case, an effect which is suppressed in the 2D nanoplatelets due to their large exciton binding energies. The results highlight the importance of the surrounding environment of the inorganic nanoplatelets on their relaxation dynamics. Moreover, this 2D material with relaxation times in the subpicosecond regime shows great potential for realizing devices such as photodetectors or all-optical switches operating at THz frequencies.
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Affiliation(s)
- Verena
A. Hintermayr
- Chair
for Photonics and Optoelectronics, Department of Physics, Ludwig-Maximilians-Universität München, Amalienstr. 54, 80799 Munich, Germany
- Nanosystems
Initiative Munich (NIM) and Center for NanoScience (CeNS), Schellingstr. 4, 80799 Munich, Germany
| | - Lakshminarayana Polavarapu
- Chair
for Photonics and Optoelectronics, Department of Physics, Ludwig-Maximilians-Universität München, Amalienstr. 54, 80799 Munich, Germany
- Nanosystems
Initiative Munich (NIM) and Center for NanoScience (CeNS), Schellingstr. 4, 80799 Munich, Germany
| | - Alexander S. Urban
- Chair
for Photonics and Optoelectronics, Department of Physics, Ludwig-Maximilians-Universität München, Amalienstr. 54, 80799 Munich, Germany
- Nanosystems
Initiative Munich (NIM) and Center for NanoScience (CeNS), Schellingstr. 4, 80799 Munich, Germany
- E-mail:
| | - Jochen Feldmann
- Chair
for Photonics and Optoelectronics, Department of Physics, Ludwig-Maximilians-Universität München, Amalienstr. 54, 80799 Munich, Germany
- Nanosystems
Initiative Munich (NIM) and Center for NanoScience (CeNS), Schellingstr. 4, 80799 Munich, Germany
- E-mail:
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5
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Shin HJ, Kim J, Kim S, Kim H, Nguyen VL, Lee YH, Lim SC, Son JH. Transient Carrier Cooling Enhanced by Grain Boundaries in Graphene Monolayer. ACS Appl Mater Interfaces 2017; 9:41026-41033. [PMID: 29072440 DOI: 10.1021/acsami.7b12812] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Using a high terahertz (THz) electric field (ETHz), the carrier scattering in graphene was studied with an electric field of up to 282 kV/cm. When the grain size of graphene monolayers varies from small (5 μm) and medium (70 μm) to large grains (500 μm), the dominant carrier scattering source in large- and small-grained graphene differs at high THz field, i.e., there is optical phonon scattering for large grains and defect scattering for small grains. Although the electron-optical phonon coupling strength is the same for all grain sizes in our study, the enhanced optical phonon scattering in the high THz field from the large-grained graphene is caused by a higher optical phonon temperature, originating from the slow relaxation of accelerated electrons. Unlike the large-grained graphene, lower electron and optical phonon temperatures are found in the small-grained graphene monolayer, resulting from the effective carrier cooling through the defects, called supercollisions. Our results indicate that the carrier mobility in the high-crystalline graphene is easily vulnerable to scattering by the optical phonons. Thus, controlling the population of defect sites, as a means for carrier cooling, can enhance the carrier mobility at high electric fields in graphene electronics by suppressing the heating of optical phonons.
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Affiliation(s)
- Hee Jun Shin
- Department of Physics, University of Seoul , Seoul 02504, Republic of Korea
- Research Group of Food Safety, Korea Food Research Institute , Wanju 55365, Republic of Korea
| | | | | | - Hyeongmun Kim
- Department of Physics, University of Seoul , Seoul 02504, Republic of Korea
| | | | | | | | - Joo-Hiuk Son
- Department of Physics, University of Seoul , Seoul 02504, Republic of Korea
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6
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Rainò G, Visimberga G, Salhi A, Todaro MT, De Vittorio M, Passaseo A, Cingolani R, De Giorgi M. The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot. Nanoscale Res Lett 2007; 2:509. [PMCID: PMC3246602 DOI: 10.1007/s11671-007-9092-2] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2007] [Accepted: 08/27/2007] [Indexed: 05/31/2023]
Abstract
We have investigated the ultra-fast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots (QDs) emitting at 1.3 μm by time resolved photoluminescence (TRPL) upconversion measurements with a time resolution of about 200 fs. Changing the detection energies in the spectral region from the energy of the quantum dots excitonic transition up to the barrier layer absorption edge, we have found that, under high excitation intensity, the intrinsic electronic states are populated mainly by carriers directly captured from the barrier.
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Affiliation(s)
- Gabriele Rainò
- CNR – INFM Distretto Tecnologico, ISUFI, National Nanotechnology Laboratory, via Arnesano, Lecce, 73100, Italy
| | | | - Abdelmajid Salhi
- CNR – INFM Distretto Tecnologico, ISUFI, National Nanotechnology Laboratory, via Arnesano, Lecce, 73100, Italy
| | - Maria T Todaro
- CNR – INFM Distretto Tecnologico, ISUFI, National Nanotechnology Laboratory, via Arnesano, Lecce, 73100, Italy
| | - Massimo De Vittorio
- CNR – INFM Distretto Tecnologico, ISUFI, National Nanotechnology Laboratory, via Arnesano, Lecce, 73100, Italy
| | - Adriana Passaseo
- CNR – INFM Distretto Tecnologico, ISUFI, National Nanotechnology Laboratory, via Arnesano, Lecce, 73100, Italy
| | - Roberto Cingolani
- CNR – INFM Distretto Tecnologico, ISUFI, National Nanotechnology Laboratory, via Arnesano, Lecce, 73100, Italy
| | - Milena De Giorgi
- CNR – INFM Distretto Tecnologico, ISUFI, National Nanotechnology Laboratory, via Arnesano, Lecce, 73100, Italy
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