The Structure and Properties of Amorphous Indium Oxide

Unraveling the molecular and growth mechanism of colloidal black In2O3-x

Black metal oxides with varying concentrations of O-vacancies display enhanced optical and catalytic properties. However, direct solution syntheses of this class of materials have been limited despite being highly advantageous given the different synthetic handles that can be leveraged towards control of the targeted material. Herein, we present an alternate colloidal synthesis of black In2O3-x nanoparticles from the simple reaction between In(acac)3 and oleyl alcohol. Growth studies by PXRD, TEM, and STEM-EDS coupled to mechanistic insights from 1H, 13C NMR revealed the particles form via two paths, one of which involves In0. We also show that variations in the synthesis atmosphere, ligand environment, and indium precursor can inhibit formation of the black In2O3-x. The optical spectrum for the black nanoparticles displayed a significant redshift when compared to pristine In2O3, consistent with the presence of O-vacancies. Raman spectra and surface analysis also supported the presence of surface oxygen vacancies in the as-synthesized black In2O3-x.

Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors

Tungsten oxide (WO3) doped indium oxide (IWO) field-effect transistors (FET), synthesized using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line (BEOL) compatibility, are demonstrated. Low-concentration (1∼4 W atom %) WO3-doping in In2O3 films is achieved by adjusting cycle ratios of the indium and tungsten precursors with the oxidant coreactant. Such doping suppresses oxygen deficiency from In2O2.5 to In2O3 stoichiometry with only 1 atom % W, allowing devices to turn off stably and enhancing threshold voltage stability. The ALD IWO FETs exhibit superior performance, including a low subthreshold slope of 67 mV/decade and negligible hysteresis. Strong tunability of the threshold voltage (Vth) is achieved through W concentration tuning, with 2 atom % IWO FETs showing an optimized Vth for enhancement-mode and a high drain current. ALD IWO FETs have remarkable stability under bias stress and nearly ideal performance extending to sub-100 nm channel lengths, making them promising candidates for high-performance monolithic 3D integrated devices.

Physical insight of random fluctuation in metal/IGZO Schottky barriers for low-variation contact optimal design

The study aimed to investigate the impact of random fluctuations in Schottky barrier formation at polar interfaces between InGaZnO4 (IGZO) and different metals, particularly in the context of device miniaturization. The investigation revealed that different metals can establish various crystalline IGZO interfaces to achieve Ohmic contact, regardless of their work function. Additionally, the study suggests that introducing In doping at the amorphous IGZO interface can effectively reduce the Schottky barrier when in contact with Al metal. These findings provide theoretical guidance for the miniaturization of source-drain contacts in IGZO devices.

Review-Extremely Thin Amorphous Indium Oxide Transistors

Amorphous oxide semiconductor transistors have been a mature technology in display panels for upward of a decade, and have recently been considered as promising back-end-of-line compatible channel materials for monolithic 3D applications. However, achieving high-mobility amorphous semiconductor materials with comparable performance to traditional crystalline semiconductors has been a long-standing problem. Recently it has been found that greatly reducing the thickness of indium oxide, enabled by an atomic layer deposition (ALD) process, can tune its material properties to achieve high mobility, high drive current, high on/off ratio, and enhancement-mode operation at the same time, beyond the capabilities of conventional oxide semiconductor materials. In this work, the history leading to the re-emergence of indium oxide, its fundamental material properties, growth techniques with a focus on ALD, state-of-the-art indium oxide device research, and the bias stability of the devices are reviewed.

Monitoring the Electrochemical Failure of Indium Tin Oxide Electrodes via Operando Ellipsometry Complemented by Electron Microscopy and Spectroscopy

Transparent conductive oxides such as indium tin oxide (ITO) are standards for thin film electrodes, providing a synergy of high optical transparency and electrical conductivity. In an electrolytic environment, the determination of an inert electrochemical potential window is crucial to maintain a stable material performance during device operation. We introduce operando ellipsometry, combining cyclic voltammetry (CV) with spectroscopic ellipsometry, as a versatile tool to monitor the evolution of both complete optical (i.e., complex refractive index) and electrical properties under wet electrochemical operational conditions. In particular, we trace the degradation of ITO electrodes caused by electrochemical reduction in a pH-neutral, water-based electrolyte environment during electrochemical cycling. With the onset of hydrogen evolution at negative bias voltages, indium and tin are irreversibly reduced to the metallic state, causing an advancing darkening, i.e., a gradual loss of transparency, with every CV cycle, while the conductivity is mostly conserved over multiple CV cycles. Post-operando analysis reveals the reductive (loss of oxygen) formation of metallic nanodroplets on the surface. The reductive disruption of the ITO electrode happens at the solid-liquid interface and proceeds gradually from the surface to the bottom of the layer, which is evidenced by cross-sectional transmission electron microscopy imaging and complemented by energy-dispersive X-ray spectroscopy mapping. As long as a continuous part of the ITO layer remains at the bottom, the conductivity is largely retained, allowing repeated CV cycling. We consider operando ellipsometry a sensitive and nondestructive tool to monitor early stage material and property changes, either by tracing failure points, controlling intentional processes, or for sensing purposes, making it suitable for various research fields involving solid-liquid interfaces and electrochemical activity.

Realization of tunable-performance in atomic layer deposited Hf-doped In2O3 thin film transistor via oxygen vacancy modulation

Due to the limitation of inherent ultra-high electron concentration, the electrical properties of In2O3 resemble those of conductors rather than semiconductors prior to special treatment. In this study, the effect of various annealing treatments on the microstructure, optical properties, and oxygen vacancies of the films and transistors is systematically investigated. Our finding reveals a progressive crystallization trend in the films with increasing annealing temperature. In addition, a higher annealing temperature is also associated with the reduction in the concentration of oxygen vacancies, as well as an elevation in both optical transmittance and optical bandgap. Furthermore, with the implementation of annealing process, the devices gradually transform from no pronounced gate control to exhibit with excellent gate control and electrical performances. The atomic layer deposited Hf-doped In2O3 thin film transistor annealed at 250 °C exhibits optimal electrical properties, with a field-effect mobility of 18.65 cm2 V-1 s-1, a subthreshold swing of 0.18 V/dec, and an Ion/Ioff ratio of 2.76 × 106. The results indicate that the impact of varying annealing temperatures can be attributed to the modulation of oxygen vacancies within the films. This work serves as a complementary study for the existing post-treatment of oxide films and provides a reliable reference for utilization of the annealing process in practical applications.

Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips

As Si has faced physical limits on further scaling down, novel semiconducting materials such as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained tremendous attention to continue the ever-demanding downscaling represented by Moore's law. Among them, OS is considered to be the most promising alternative material because it has intriguing features such as modest mobility, extremely low off-current, great uniformity, and low-temperature processibility with conventional complementary-metal-oxide-semiconductor-compatible methods. In practice, OS has successfully replaced hydrogenated amorphous Si in high-end liquid crystal display devices and has now become a standard backplane electronic for organic light-emitting diode displays despite the short time since their invention in 2004. For OS to be implemented in next-generation electronics such as back-end-of-line transistor applications in monolithic 3D integration beyond the display applications, however, there is still much room for further study, such as high mobility, immune short-channel effects, low electrical contact properties, etc. This study reviews the brief history of OS and recent progress in device applications from a material science and device physics point of view. Simultaneously, remaining challenges and opportunities in OS for use in next-generation electronics are discussed.

Realizing the Heteromorphic Superlattice: Repeated Heterolayers of Amorphous Insulator and Polycrystalline Semiconductor with Minimal Interface Defects

An unconventional "heteromorphic" superlattice (HSL) is realized, comprised of repeated layers of different materials with differing morphologies: semiconducting pc-In₂ O₃ layers interleaved with insulating a-MoO₃ layers. Originally proposed by Tsu in 1989, yet never fully realized, the high quality of the HSL heterostructure demonstrated here validates the intuition of Tsu, whereby the flexibility of the bond angle in the amorphous phase and the passivation effect of the oxide at interfacial bonds serve to create smooth, high-mobility interfaces. The alternating amorphous layers prevent strain accumulation in the polycrystalline layers while suppressing defect propagation across the HSL. For the HSL with 7:7 nm layer thickness, the observed electron mobility of 71 cm²  Vs^-1 , matches that of the highest quality In₂ O₃ thin films. The atomic structure and electronic properties of crystalline In₂ O₃ /amorphous MoO₃ interfaces are verified using ab-initio molecular dynamics simulations and hybrid functional calculations. This work generalizes the superlattice concept to an entirely new paradigm of morphological combinations.

Addressing the Conflict between Mobility and Stability in Oxide Thin-film Transistors

Amorphous oxide semiconductor thin-film transistors (AOS TFTs) are ever-increasingly utilized in displays. However, to bring high mobility and excellent stability together is a daunting challenge. Here, the carrier transport/relaxation bilayer stacked AOS TFTs are investigated to solve the mobility-stability conflict. The charge transport layer (CTL) is made of amorphous In-rich InSnZnO, which favors big average effective coordination number for all cations and more edge-shared structures for better charge transport. Praseodymium-doped InSnZnO is used as the charge relaxation layer (CRL), which substantially shortens the photoelectron lifetime as revealed by femtosecond transient absorption spectroscopy. The CTL and CRL with the thickness suitable for industrial production respectively afford minute potential barrier fluctuation for charge transport and fast relaxation for photo-generated carriers, resulting in transistors with an ultrahigh mobility (75.5 cm² V^-1 s^-1 ) and small negative-bias-illumination-stress/positive-bias-temperature-stress voltage shifts (-1.64/0.76 V). The design concept provides a promising route to address the mobility-stability conflict for high-end displays.

Ultrasmall amorphous zirconia nanoparticles catalyse polyolefin hydrogenolysis

Carbon–carbon bond cleavage reactions, adapted to deconstruct aliphatic hydrocarbon polymers and recover the intrinsic energy and carbon value in plastic waste, have typically been catalysed by metal nanoparticles or air-sensitive organometallics. Metal oxides that serve as supports for these catalysts are typically considered to be inert. Here we show that Earth-abundant, non-reducible zirconia catalyses the hydrogenolysis of polyolefins with activity rivalling that of precious metal nanoparticles. To harness this unusual reactivity, our catalytic architecture localizes ultrasmall amorphous zirconia nanoparticles between two fused platelets of mesoporous silica. Macromolecules translocate from bulk through radial mesopores to the highly active zirconia particles, where the chains undergo selective hydrogenolytic cleavage into a narrow, C18-centred distribution. Calculations indicated that C–H bond heterolysis across a Zr–O bond of a Zr(O)2 adatom model for unsaturated surface sites gives a zirconium hydrocarbyl, which cleaves a C–C bond via β-alkyl elimination.

Non-epitaxial single-crystal 2D material growth by geometric confinement

Two-dimensional (2D) materials and their heterostructures show a promising path for next-generation electronics^1-3. Nevertheless, 2D-based electronics have not been commercialized, owing mainly to three critical challenges: i) precise kinetic control of layer-by-layer 2D material growth, ii) maintaining a single domain during the growth, and iii) wafer-scale controllability of layer numbers and crystallinity. Here we introduce a deterministic, confined-growth technique that can tackle these three issues simultaneously, thus obtaining wafer-scale single-domain 2D monolayer arrays and their heterostructures on arbitrary substrates. We geometrically confine the growth of the first set of nuclei by defining a selective growth area via patterning SiO₂ masks on two-inch substrates. Owing to substantial reduction of the growth duration at the micrometre-scale SiO₂ trenches, we obtain wafer-scale single-domain monolayer WSe₂ arrays on the arbitrary substrates by filling the trenches via short growth of the first set of nuclei, before the second set of nuclei is introduced, thus without requiring epitaxial seeding. Further growth of transition metal dichalcogenides with the same principle yields the formation of single-domain MoS₂/WSe₂ heterostructures. Our achievement will lay a strong foundation for 2D materials to fit into industrial settings.

Influence of Post Processing on Thermal Conductivity of ITO Thin Films

This work presents the influence of post processing on morphology, thermal and electrical properties of indium tin oxide (ITO) thin films annealed at 400 °C in different atmospheres. The commercially available 170 nm thick ITO layers deposited on glass were used as a starting material. The X-ray diffraction measurements revealed polycrystalline structure with dominant signal from (222) plane for all samples. The annealing reduces the intensity of this peak and causes increase of (221) and (440) peaks. Atomic force microscopy images showed that the surface morphology is typical for polycrystalline layers with roughness not exceeding few nm. Annealing in the oxygen and the nitrogen-hydrogen mixture (NHM) changes shapes of grains. The electrical conductivity decreases after annealing except the one of layer annealed in NHM. Thermal conductivities of annealed ITO thin films were in range from 6.4 to 10.6 W·m^-1·K^-1, and they were higher than the one for starting material-5.1 W·m^-1·K^-1. Present work showed that annealing can be used to modify properties of ITO layers to make them useful for specific applications e.g., in ITO based solar cells.

High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium-Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach

In this paper, the feasibility of an indium-gallium oxide (In_2(1-x)Ga_2xO_y) film through combinatorial atomic layer deposition (ALD) as an alternative channel material for back-end-of-line (BEOL) compatible transistor applications is studied. The microstructure of random polycrystalline In₂O_y with a bixbyite structure was converted to the amorphous phase of In_2(1-x)Ga_2xO_y film under thermal annealing at 400 °C when the fraction of Ga is ≥29 at. %. In contrast, the enhancement in the orientation of the (222) face and subsequent grain size was observed for the In_1.60Ga_0.40O_y film with the intermediate Ga fraction of 20 at. %. The suitability as a channel layer was tested on the 10-nm-thick HfO₂ gate oxide where the natural length was designed to meet the requirement of short channel devices with a smaller gate length (<100 nm). The In_1.60Ga_0.40O_y thin-film transistors (TFTs) exhibited the high field-effect mobility (μ_FE) of 71.27 ± 0.98 cm²/(V s), low subthreshold gate swing (SS) of 74.4 mV/decade, threshold voltage (V_TH) of -0.3 V, and I_ON/OFF ratio of >10⁸, which would be applicable to the logic devices such as peripheral circuit of heterogeneous DRAM. The in-depth origin for this promising performance was discussed in detail, based on physical, optical, and chemical analysis.

High-Entropy Sn0.8(Co0.2Mg0.2Mn0.2Ni0.2Zn0.2)2.2O4 Conversion-Alloying Anode Material for Li-Ion Cells: Altered Lithium Storage Mechanism, Activation of Mg, and Origins of the Improved Cycling Stability

Benefits emerging from applying high-entropy ceramics in Li-ion technology are already well-documented in a growing number of papers. However, an intriguing question may be formulated: how can the multicomponent solid solution-type material ensure stable electrochemical performance? Utilizing an example of nonequimolar Sn-based Sn_0.8(Co_0.2Mg_0.2Mn_0.2Ni_0.2Zn_0.2)_2.2O₄ high-entropy spinel oxide, we provide a comprehensive model explaining the observed very good cyclability. The material exhibits a high specific capacity above 600 mAh g^-1 under a specific current of 50 mA g^-1 and excellent capacity retention near 100% after 500 cycles under 200 mA g^-1. The stability originates from the conversion-alloying reversible reactivity of the amorphous matrix, which forms during the first lithiation from the initial high-entropy structure, and preserves the high level of cation disorder at the atomic scale. In the altered Li-storage mechanism in relation to the simple oxides, the unwanted aggregated metallic grains are not exsolved from the anode and therefore do not form highly lithiated phases characterized by large volumetric changes. Also, the electrochemical activity of Mg from the oxide matrix can be clearly observed. Because the studied compound was prepared by a conventional solid-state route, implementation of the presented approach is facile and appears usable for any oxide anode material containing a high-entropy mixture of elements.

Multifunctional Zn-Doped ITO Sol-Gel Films Deposited on Different Substrates: Application as CO2-Sensing Material

Undoped and Zn-doped ITO (ITO:Zn) multifunctional thin films were successfully synthesized using the sol-gel and dipping method on three different types of substrates (glass, SiO₂/glass, and Si). The effect of Zn doping on the optoelectronic, microstructural, and gas-sensing properties of the films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), spectroscopic ellipsometry (SE), Raman spectroscopy, Hall effect measurements (HE), and gas testing. The results showed that the optical constants, the transmission, and the carrier numbers were correlated with the substrate type and with the microstructure and the thickness of the films. The Raman study showed the formation of ITO films and the incorporation of Zn in the doped film (ITO:Zn), which was confirmed by EDX analysis. The potential use of the multifunctional sol-gel ITO and ITO:Zn thin films was proven for TCO applications or gas-sensing experiments toward CO₂. The Nyquist plots and equivalent circuit for fitting the experimental data were provided. The best electrical response of the sensor in CO₂ atmosphere was found at 150 °C, with activation energy of around 0.31 eV.

Polycrystalline InGaO Thin-Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm2 V-1 s-1 and Excellent Stability for Replacing Current Poly-Si Thin-Film Transistors for Organic Light-Emitting Diode Displays

Highly ordered polycrystalline indium gallium oxide (PC-IGO) film is obtained by the crystallization of room temperature sputtered amorphous IGO on a hot plate at 350 °C for 1 h and then annealed for 1 h in an N₂ O environment. A high-density PC-IGO of ≈7.15 g cm^-3 with reduced oxygen vacancy (≈14.83%) and hydroxyl (OH) related defects (≈10.96%) has been obtained by N₂ O annealing. Self-aligned coplanar thin-film transistor (TFT) with the PC-IGO exhibits the average saturation mobility of 78.73 cm² V^-1 s^-1 , threshold voltage of -1.07 V, subthreshold swing of 0.147 V dec^-1 , and the on/off current ratio of over 10⁸ . The TFTs show excellent stability under bias-temperature stress with a negligible threshold voltage shift (ΔV_TH ) of + 0.1 and -0.1 V for the positive and negative bias stresses, respectively. The TFTs exhibit very stable environmental stability when the TFTs are stored under high humidity (85%) and a high temperature (85 °C) for 2 days. The ring oscillator and the gate driver mode of the PC-IGO TFTs exhibit the propagation delay of 7.44 ns/stage with rising/falling times of less than 0.7 μs, respectively. Therefore, the PC-IGO TFTs are suitable for large area, high-resolution active-matrix organic, and inorganic light-emitting diodes displays.

Hydrogen Behavior at Crystalline/Amorphous Interface of Transparent Oxide Semiconductor and Its Effects on Carrier Transport and Crystallization

The role of disorder and particularly of the interfacial region between crystalline and amorphous phases of indium oxide in the formation of hydrogen defects with covalent (In-OH) or ionic (In-H-In) bonding are investigated using ab initio molecular dynamics and hybrid density-functional approaches. The results reveal that disorder stabilizes In-H-In defects even in the stoichiometric amorphous oxide and also promotes the formation of deep electron traps adjacent to In-OH defects. Furthermore, below-room-temperature fluctuations help switch interfacial In-H-In into In-OH, creating a new deep state in the process. This H-defect transformation limits not only the number of free carriers but also the grain size, as observed experimentally in heavily H-doped sputtered In₂O_x. On the other hand, the presence of In-OH helps break O₂ defects, abundant in the disordered indium oxide, and thus contributes to faster crystallization rates. The divergent electronic properties of the ionic vs covalent H defects─passivation of undercoordinated In atoms vs creation of new deep electron traps, respectively─and the different behavior of the two types of H defects during crystallization suggest that the resulting macroscopic properties of H-doped indium oxide are governed by the relative concentrations of the In-H-In and In-OH defects. The microscopic understanding of the H defect formation and properties developed in this work serves as a foundation for future research efforts to find ways to control H species during deposition.

Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H)

Hydrogenated polycrystalline In₂O₃ (In₂O₃:H) thin-film transistors (TFTs) fabricated via the low-temperature solid-phase crystallization (SPC) process with a field-effect mobility (μ_FE) exceeding 100 cm² V^-1 s^-1 are promising candidates for future electronics applications. In this study, we investigated the effects of the SPC temperature of Ar + O₂ + H₂-sputtered In₂O₃:H films on the electron transport properties of In₂O₃:H TFTs. The In₂O₃:H TFT with an SPC temperature of 300 °C exhibited the best performance, having the largest µ_FE of 139.2 cm² V^-1 s^-1. In contrast, the µ_FE was slightly degraded with increasing SPC temperature (400 °C and higher). Extended X-ray absorption fine structure analysis revealed that the medium-range ordering in the In₂O₃:H network was further improved by annealing up to 600 °C, while a large amount of H₂O was desorbed from the In₂O₃:H films at SPC temperatures above 400 °C, resulting in the creation of defects at grain boundaries. The threshold temperature of H₂O desorption corresponded well with the carrier transport properties; the µ_FE of the TFTs started to deteriorate at SPC temperatures of 400 °C and higher. Thus, it was suggested that the hydrogen remaining in the film after SPC plays an important role in the passivation of electron traps, especially for grain boundaries, resulting in an enhancement of the µ_FE of In₂O₃:H TFTs.

Local Disordering in the Amorphous Network of a Solution-Processed Indium Tin Oxide Thin Film

The polyhedra unit structure (MO_x) in an amorphous metal oxide network has more freedom and flexibility than the same unit structure in a crystalline phase. Consequently, a mild external stimulus (e.g., instant photonic and acoustic energy) could affect and change this network parameter, thereby enhancing and modulating the electrical properties. However, it is difficult to tune these atomic parameters solely while maintaining the metal oxide's initial global amorphous phase and thereby preventing mechanical instability at the film-substrate interface (i.e., cracking or distortion). Here, we report local disordering in an amorphous network of a solution-processable indium tin oxide (ITO) film, where the disordering is triggered by mild-light irradiation (<0.1 mJ/cm²). Through a combination of systematic characterizations of the global structural and chemical compositional changes in conjunction with extended X-ray absorption fine structure analyses, we revealed the distortion of the atomic structure in the amorphous network of the ITO film led to the formation of additional structural oxygen vacancies. Our findings enabled us to fabricate mechanical-instability-free, perfect amorphous-phase ITO thin films on plastic substrates, where the sheet resistance substantially decreased to ∼ 2 × 10³ Ω/□. Furthermore, this sheet resistance did not vary when the film and substrate were bent to a radius of 2 mm and could operate at low temperatures. This work can pave the novel way to fabricate high-quality flexible transparent electrodes suitable for rapid, cost-effective, and patternable processing on plastic substrates, and the domain can be extended to flexible electronics.

Potential- and Time-Dependent Dynamic Nature of an Oxide-Derived PdIn Nanocatalyst during Electrochemical CO2 Reduction

Electrochemical reduction of CO₂ into valuable fuels and chemicals is a promising route of replacing fossil fuels by reducing CO₂ emissions and minimizing its adverse effects on the climate. Tremendous efforts have been carried out for designing efficient catalyst materials to selectively produce the desired product in high yield from CO₂ by the electrochemical process. In this work, a strategy is reported to enhance the electrochemical CO₂ reduction reaction (ECO₂RR) by constructing an interface between a metal-based alloy (PdIn) nanoparticle and an oxide (In₂O₃), which was synthesized by a facile solution method. The oxide-derived PdIn surface has shown excellent eCO₂RR activity and enhanced CO selectivity with a Faradaic efficiency (FE) of 92.13% at -0.9 V (vs RHE). On the other hand, surface PdO formation due to charge transfer on the bare PdIn alloy reduces the CO₂RR activity. With the support of in situ (EXAFS and IR) and ex situ (XPS, Raman) spectroscopic techniques, the optimum presence of the Pd-In-O interface has been identified as a crucial parameter for enhancing eCO₂RR toward CO in a reducing atmosphere. The influence of eCO₂RR duration is reported to affect the overall performance by switching the product selectivity from H₂ (from water reduction) to CO (from eCO₂RR) on the oxide-derived alloy surface. This work also succeeded in the multifold enhancement of the current density by employing the gas diffusion electrode (GDE) and optimizing its process parameters in a flow cell configuration.

A top-down strategy for amorphization of hydroxyl compounds for electrocatalytic oxygen evolution

Amorphous materials have attracted increasing attention in diverse fields due to their unique properties, yet their controllable fabrications still remain great challenges. Here, we demonstrate a top-down strategy for the fabrications of amorphous oxides through the amorphization of hydroxides. The versatility of this strategy has been validated by the amorphizations of unitary, binary and ternary hydroxides. Detailed characterizations indicate that the amorphization process is realized by the variation of coordination environment during thermal treatment, where the M-OH octahedral structure in hydroxides evolves to M-O tetrahedral structure in amorphous oxides with the disappearance of the M-M coordination. The optimal amorphous oxide (FeCoSn(OH)6-300) exhibits superior oxygen evolution reaction (OER) activity in alkaline media, where the turnover frequency (TOF) value is 39.4 times higher than that of FeCoSn(OH)6. Moreover, the enhanced OER performance and the amorphization process are investigated with density functional theory (DFT) and molecule dynamics (MD) simulations. The reported top-down fabrication strategy for fabricating amorphous oxides, may further promote fundamental research into and practical applications of amorphous materials for catalysis.

A new route to obtain fluorescence X-ray absorption spectra of compounds and to remove the self-absorption induced nonlinearity in the spectra

A new route to obtain fluorescence X-ray absorption spectra of compounds and to remove the self-absorption induced nonlinearity in the spectra is described. The fluorescent intensity I_f is linearly proportional to the absorption coefficient μ. For studies of surface structures around an element (κ) the fluorescence detection is often the mode of choice. However, the measurement may suffer from a self-absorption (SA) effect which nonlinearly distorts the spectra. The effect is severe when κ is concentrated or the measurements are carried out in certain geometries. Here, the correlations among emission events in compounds are examined following resonance X-ray core-electron excitation within κ. Under conditions leading to SA, I_f emitted from κ apparently has a conjugated relationship with the fluorescent intensities simultaneously emitted from other elements (ξ). Normalizing the former (κ) by the latter (ξ) will largely remove SA effects and reduce this nonlinear problem to a tractable linear problem. This does result in a moderate reduction of the spectral amplitude due to the so-called secondary emission from ξ excited by the emission from κ. Nonetheless, the resulting spectra will allow one to accurately determine bond distances and disorder and, in some respects, can be superior to spectra obtained via the absorption channel. For μ_ξ < μ_κ and grazing incidence geometry, the amplitude reduction can be small and simple normalization is sufficient to restore the spectral integrity with remarkable accuracy. This has been instrumental in unravelling the surface and subsurface structures around cations in amorphous Ga-In-O and Zn-Sn-O films which are otherwise inaccessible due to severe SA effects. This method has also been applied to several samples with μ_ξ ≃ μ_κ to examine its applicability. For these samples, the amplitude reduction is 12 ± 4% versus their standards for the data measured with the classical 45°/45° geometry. This experimental method is easy to implement. Since I_f from κ and ξ are measured by the same detector system, it is also superior to other methods in removing systematic errors such as detector system nonlinearity, electronic noise, and some beam instabilities, and in removing spectral imperfections due to, for example, SA effects, diffraction effects and sample inhomogeneity. The distortions resulting from the latter can be severe in the spectra measured in transmission mode.

Metal and metal oxide amorphous nanomaterials towards electrochemical applications

Amorphous nanomaterials have aroused extensive interest due to their unique properties. Their performance is highly related with their distinct atomic arrangements, which have no long-range order but possess short- to medium-range order. Herein, an overview of state-of-the-art synthesis methods of amorphous nanomaterials, structural characteristics and their electrochemical properties is presented. Advanced characterization methods for analyzing and proving the local order of amorphous structures, such as X-ray absorption fine structure spectroscopy, atomic electron tomography and nanobeam electron diffraction, are introduced. Various synthesis strategies for amorphous nanomaterials are covered, especially the salt-assisted metal organic decomposition method to prepare ultrathin amorphous nanosheets. Furthermore, the design and structure-activity relationship of amorphous nanomaterials towards electrochemical applications, including electrocatalysts and battery anode/cathode materials, is discussed.

Probing Multiscale Disorder in Pyrochlore and Related Complex Oxides in the Transmission Electron Microscope: A Review

Transmission electron microscopy (TEM), and its counterpart, scanning TEM (STEM), are powerful materials characterization tools capable of probing crystal structure, composition, charge distribution, electronic structure, and bonding down to the atomic scale. Recent (S)TEM instrumentation developments such as electron beam aberration-correction as well as faster and more efficient signal detection systems have given rise to new and more powerful experimental methods, some of which (e.g., 4D-STEM, spectrum-imaging, in situ/operando (S)TEM)) facilitate the capture of high-dimensional datasets that contain spatially-resolved structural, spectroscopic, time- and/or stimulus-dependent information across the sub-angstrom to several micrometer length scale. Thus, through the variety of analysis methods available in the modern (S)TEM and its continual development towards high-dimensional data capture, it is well-suited to the challenge of characterizing isometric mixed-metal oxides such as pyrochlores, fluorites, and other complex oxides that reside on a continuum of chemical and spatial ordering. In this review, we present a suite of imaging and diffraction (S)TEM techniques that are uniquely suited to probe the many types, length-scales, and degrees of disorder in complex oxides, with a focus on disorder common to pyrochlores, fluorites and the expansive library of intermediate structures they may adopt. The application of these techniques to various complex oxides will be reviewed to demonstrate their capabilities and limitations in resolving the continuum of structural and chemical ordering in these systems.

New Opportunities for High-Performance Source-Gated Transistors Using Unconventional Materials

Source-gated transistors (SGTs), which are typically realized by introducing a source barrier in staggered thin-film transistors (TFTs), exhibit many advantages over conventional TFTs, including ultrahigh gain, lower power consumption, higher bias stress stability, immunity to short-channel effects, and greater tolerance to geometric variations. These properties make SGTs promising candidates for readily fabricated displays, biomedical sensors, and wearable electronics for the Internet of Things, where low power dissipation, high performance, and efficient, low-cost manufacturability are essential. In this review, the general aspects of SGT structure, fabrication, and operation mechanisms are first discussed, followed by a detailed property comparison with conventional TFTs. Next, advances in high-performance SGTs based on silicon are first discussed, followed by recent advances in emerging metal oxides, organic semiconductors, and 2D materials, which are individually discussed, followed by promising applications that can be uniquely realized by SGTs and their circuitry. Lastly, this review concludes with challenges and outlook overview.

Hard x-ray methods for studying the structure of amorphous thin films and bulk glassy oxides

High-energy photon diffraction minimizes many of the corrections associated with laboratory x-ray diffractometers, and enables structure factor measurements to be made over a wide range of momentum transfers. The method edges us closer toward an ideal experiment, in which coordination numbers can be extracted without knowledge of the sample density. Three case studies are presented that demonstrate new hard x-ray methods for studying the structure of glassy and amorphous materials. First, the methodology and analysis of high-energy grazing incidence on thin films is discussed for the case of amorphous In₂O₃. The connectivity of irregular InO₆polyhedra are shown to exist in face-, edge- and corner-shared configurations in the approximate ratio of 1:2:3. Secondly, the technique of high-energy small and wide angle scattering has been carried out on laser heated and aerodynamically levitated samples of silica-rich barium silicate (20BaO:80SiO₂), from the single phase melt at 1500^oC to the phase separated glass at room temperature. Based on Ba-O coordination numbers of 6 to 7, it is argued that the although the potential of Ba is ionic, it is weak enough to cause the liquid-liquid immiscibility to become metastable. Lastly, high-energy small and wide angle scattering has also been applied to high water content (up to 12 wt.%) samples of hydrous SiO₂glass quenched from 1500^oC at 4 GPa. An increase of Si₁-O₂correlations at 4.3 Å is found to be consistent with an increase in the population of three-membered SiO₄rings at the expense of larger rings.

Conductive Polymer-Assisted Metal Oxide Hybrid Semiconductors for High-Performance Thin-Film Transistors

Metal oxide semiconductors doped with additional inorganic cations have insufficient electron mobility for next-generation electronic devices so strategies to realize the semiconductors exhibiting stability and high performance are required. To overcome the limitations of conventional inorganic cation doping to improve the electrical characteristics and stability of metal oxide semiconductors, we propose solution-processed high-performance metal oxide thin-film transistors (TFTs) by incorporating polyaniline (PANI), a conductive polymer, in a metal oxide matrix. The chemical interaction between the metal oxide and PANI demonstrated that the defect sites and crystallinity of the semiconductor layer are controllable. In addition, the change in oxygen-related chemical bonding of PANI-doped indium oxide (InO_x) TFTs induces superior electrical characteristics compared to pristine InO_x TFTs, even though trace amounts of PANI are doped in the semiconductor. In particular, the average field-effect mobility remarkably enhanced from 15.02 to 26.58 cm² V^-1 s^-1, the on/off current ratio improved from 10⁸ to 10⁹, and the threshold voltage became close to 0 V actually from -7.9 to -1.4 V.

High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach

The effect of gallium (Ga) concentration on the structural evolution of atomic-layer-deposited indium gallium oxide (IGO) (In_1-xGa_xO) films as high-mobility n-channel semiconducting layers was investigated. Different Ga concentrations in 10-13 nm thick In_1-xGa_xO films allowed versatile phase structures to be amorphous, highly ordered, and randomly oriented crystalline by thermal annealing at either 400 or 700 °C for 1 h. Heavy Ga concentrations above 34 atom % caused a phase transformation from a polycrystalline bixbyite to an amorphous IGO film at 400 °C, while proper Ga concentration produced a highly ordered bixbyite crystal structure at 700 °C. The resulting highly ordered In_0.66Ga_0.34O film show unexpectedly high carrier mobility (μ_FE) values of 60.7 ± 1.0 cm² V^-1 s^-1, a threshold voltage (V_TH) of -0.80 ± 0.05 V, and an I_ON/OFF ratio of 5.1 × 10⁹ in field-effect transistors (FETs). In contrast, the FETs having polycrystalline In_1-xGa_xO films with higher In fractions (x = 0.18 and 0.25) showed reasonable μ_FE values of 40.3 ± 1.6 and 31.5 ± 2.4 cm² V^-1 s^-1, V_TH of -0.64 ± 0.40 and -0.43 ± 0.06 V, and I_ON/OFF ratios of 2.5 × 10⁹ and 1.4 × 10⁹, respectively. The resulting superior performance of the In_0.66Ga_0.34O-film-based FET was attributed to a morphology having fewer grain boundaries, with higher mass densification and lower oxygen vacancy defect density of the bixbyite crystallites. Also, the In_0.66Ga_0.34O transistor was found to show the most stable behavior against an external gate bias stress.

Resolving the Atomic Structure of Sequential Infiltration Synthesis Derived Inorganic Clusters

Sequential infiltration synthesis (SIS) is a route to the precision deposition of inorganic solids in analogy to atomic layer deposition but occurs within (vs upon) a soft material template. SIS has enabled exquisite nanoscale morphological complexity in various oxides through selective nucleation in block copolymers templates. However, the earliest stages of SIS growth remain unresolved, including the atomic structure of nuclei and the evolution of local coordination environments, before and after polymer template removal. We employed In K-edge extended X-ray absorption fine structure and atomic pair distribution function analysis of high-energy X-ray scattering to unravel (1) the structural evolution of InO_xH_y clusters inside a poly(methyl methacrylate) (PMMA) host matrix and (2) the formation of porous In₂O₃ solids (obtained after annealing) as a function of SIS cycle number. Early SIS cycles result in InO_xH_y cluster growth with high aspect ratio, followed by the formation of a three-dimensional network with additional SIS cycles. That the atomic structures of the InO_xH_y clusters can be modeled as multinuclear clusters with bonding patterns related to those in In₂O₃ and In(OH)₃ crystal structures suggests that SIS may be an efficient route to 3D arrays of discrete-atom-number clusters. Annealing the mixed inorganic/polymer films in air removes the PMMA template and consolidates the as-grown clusters into cubic In₂O₃ nanocrystals with structural details that also depend on SIS cycle number.

Boosting carrier mobility and stability in indium-zinc-tin oxide thin-film transistors through controlled crystallization

We investigated the effect of film thickness (geometrical confinement) on the structural evolution of sputtered indium-zinc-tin oxide (IZTO) films as high mobility n-channel semiconducting layers during post-treatment at different annealing temperatures ranging from 350 to 700 °C. Different thicknesses result in IZTO films containing versatile phases, such as amorphous, low-, and high-crystalline structures even after annealing at 700 °C. A 19-nm-thick IZTO film clearly showed a phase transformation from initially amorphous to polycrystalline bixbyite structures, while the ultra-thin film (5 nm) still maintained an amorphous phase. Transistors including amorphous and low crystalline IZTO films fabricated at 350 and 700 °C show reasonable carrier mobility (µFE) and on/off current ratio (ION/OFF) values of 22.4-35.9 cm2 V-1 s-1 and 1.0-4.0 × 108, respectively. However, their device instabilities against positive/negative gate bias stresses (PBS/NBS) are unacceptable, originating from unsaturated bonding and disordered sites in the metal oxide films. In contrast, the 19-nm-thick annealed IZTO films included highly-crystalline, 2D spherulitic crystallites and fewer grain boundaries. These films show the highest µFE value of 39.2 cm2 V-1 s-1 in the transistor as well as an excellent ION/OFF value of 9.7 × 108. Simultaneously, the PBS/NBS stability of the resulting transistor is significantly improved under the same stress condition. This promising superior performance is attributed to the crystallization-induced lattice ordering, as determined by highly-crystalline structures and the associated formation of discrete donor levels (~ 0.31 eV) below the conduction band edge.

Black indium oxide a photothermal CO2 hydrogenation catalyst

Nanostructured forms of stoichiometric In₂O₃ are proving to be efficacious catalysts for the gas-phase hydrogenation of CO₂. These conversions can be facilitated using either heat or light; however, until now, the limited optical absorption intensity evidenced by the pale-yellow color of In₂O₃ has prevented the use of both together. To take advantage of the heat and light content of solar energy, it would be advantageous to make indium oxide black. Herein, we present a synthetic route to tune the color of In₂O₃ to pitch black by controlling its degree of non-stoichiometry. Black indium oxide comprises amorphous non-stoichiometric domains of In₂O_3-x on a core of crystalline stoichiometric In₂O₃, and has 100% selectivity towards the hydrogenation of CO₂ to CO with a turnover frequency of 2.44 s^-1.

Hybrid Polymer/Metal Oxide Thin Films for High Performance, Flexible Transistors

Metal oxides (MOs) have garnered significant attention in a variety of research fields, particularly in flexible electronics such as wearable devices, due to their superior electronic properties. Meanwhile, polymers exhibit excellent mechanical properties such as flexibility and durability, besides enabling economic solution-based fabrication. Therefore, MO/polymer nanocomposites are excellent electronic materials for use in flexible electronics owing to the confluence of the merits of their components. In this article, we review recent developments in the synthesis and fabrication techniques for MO/polymer nanocomposite-based flexible transistors. In particular, representative MO/polymer nanocomposites for flexible and transparent channel layers and gate dielectrics are introduced and their electronic properties-such as mobilities and dielectric constant-are presented. Finally, we highlight the advances in interface engineering and its influence on device electronics.

Electrical and Optical Properties of Amorphous SnO2:Ta Films, Prepared by DC and RF Magnetron Sputtering: A Systematic Study of the Influence of the Type of the Reactive Gas

By reactive magnetron sputtering from a ceramic SnO2:Ta target onto unheated substrates, X-ray amorphous SnO:Ta films were prepared in gas mixtures of Ar/O2(N2O, H2O). The process windows, where the films exhibit the lowest resistivity values, were investigated as a function of the partial pressure of the reactive gases O2, N2O and H2O. We found that all three gases lead to the same minimum resistivity, while the width of the process window is broadest for the reactive gas H2O. While the amorphous films were remarkably conductive (ρ ≈ 5 × 10−3 Ωcm), the films crystallized by annealing at 500 °C exhibit higher resistivities due to grain boundary limited conduction. For larger film thicknesses (d ≳ 150 nm), crystallization occurs already during the deposition, caused by the substrate temperature increase due to the energy influx from the condensing film species and from the plasma (ions, electrons), leading to higher resistivities of these films. The best amorphous SnO2:Ta films had a resistivity of lower than 4 × 10−3 Ωcm, with a carrier concentration of 1.1 × 1020 cm−3, and a Hall mobility of 16 cm2/Vs. The sheet resistance was about 400 Ω/□ for 100 nm films and 80 Ω/□ for 500 nm thick films. The average optical transmittance from 500 to 1000 nm is greater than 76% for 100 nm films, where the films, deposited with H2O as reactive gas, exhibit even a slightly higher transmittance of 80%. These X-ray amorpous SnO2:Ta films can be used as low-temperature prepared transparent and conductive protection layers, for instance, to protect semiconducting photoelectrodes for water splitting, and also, where appropriate, in combination with more conductive TCO films (ITO or ZnO).

Rh promoted In2O3 as a highly active catalyst for CO2 hydrogenation to methanol

Atomically dispersed Rh promoted the activity of In₂O₃ for methanol formation from CO₂, inducing strong CO₂ adsorption and enhanced formate formation.

Role of the electronically-active amorphous state in low-temperature processed In2O3 thin-film transistors

Metal oxide (MO) thin-film transistors (TFTs) are expected to enable low-cost flexible and printed electronics, given their excellent charge transport, low processing temperatures and solution processability. However, achieving adequate mobility when processed scalably at low temperatures compatible with plastic electronics is a challenge. Here, we explore process-structure-transport relationships in blade-coated indium oxide (In2O3) TFTs via both sol-gel and combustion chemistries. We find that the sol-gel chemistry enables n-type TFTs when annealed at 200 °C to 225 °C with noticeable electron mobility ((3.4 ± 1.3) cm2V-1s-1) yet minimal In2O3 crystallinity and surprisingly low levels of the metal-oxygen-metal (M-O-M) lattice content (≈46 %). Increased annealing temperatures result in the appearance of nanocrystalline domains and an increase in M-O-M content to ≈70 %, without any further increase in mobility. An actetylacetone combustion-assisted ink lowers the external thermal budget required for In2O3 crystallization but bypasses the electronically-active amorphous state and underperforms the sol-gel ink at low temperatures. Grain boundary formation and nanocrystalline inclusions in these films due to rapid combustion-assisted crystallization are suggested to be the likely origin behind the significantly compromised charge transport at low-temperatures. Overall, this study emphasizes the need to understand the complex interplay between local order (nanocrystallinity) and connectivity (grain boundary, amorphous phases) when optimizing low-temperature processed MO thin films.

High-Mobility InSe Transistors: The Nature of Charge Transport

InSe is a high-mobility layered semiconductor with mobility being highly sensitive to any surrounding media that could act as a source of extrinsic scattering. However, little effort has been made to understand electronic transport in thin InSe layers with native surface oxide formed spontaneously upon exposure to an ambient environment. Here, we explore the influence of InO_x/InSe interfacial trap states on electronic transport in thin InSe layers. We show that wet oxidation (processed in an ambient environment) causes massive deep-lying band-tail states, through which electrons conduct via 2D variable-range hopping with a short localization length of 1-3 nm. In contrast, a high-quality InO_x/InSe interface can be formed in dry oxidation (processed in pure oxygen), with a low trap density of 10¹² eV^-1 cm^-2. Metal-insulator transition can be thus observed in the gate sweep of the field-effect transistors (FETs), indicative of band transport predominated by extended states above the mobility edge. A room-temperature band mobility of 10³ cm²/V s is obtained. The profound difference in the transport behavior between the wet and dry InSe FETs suggests that fluctuating Coulomb potential arising from trapped charges at the InO_x/InSe interface is the dominant source of disorders in thin InSe channels.

New Insights on Factors Limiting the Carrier Transport in Very Thin Amorphous Sn-Doped In2O3 Films with High Hall Mobility

We demonstrated that a mass density and size effect are dominant factors to limit the transport properties of very thin amorphous Sn-doped In₂O₃ (a-ITO) films. a-ITO films with various thicknesses (t) ranging from 5 to 50 nm were deposited on non-alkali glass substrates without intentional heating of the substrates by reactive plasma deposition with direct-current arc discharge. a-ITO films with t of more than 10 nm showed a high Hall mobility (μ_H) of more than 50 cm²/V s. For 5-nm-thick a-ITO films, we found that μ_H was as high as more than 40 cm²/V s. X-ray reflectivity measurement results revealed that the mass density (d_m) determined the carrier transport in a-ITO films. For a-ITO films with t of more than 10 nm, d_m had a high value of 7.2 g/cm³, whereas a-ITO films with t of less than 10 nm had low d_m ranging from 6.6 to 6.8 g/cm³. Quantitative new insight from a size effect on the carrier transport is given for a-ITO films with t of less than 10 nm. This study shows that the ratio of t to mean free path of carrier electrons governed μ_H.

Crystallisation Phenomena of In₂O₃:H Films

The crystallisation of sputter-deposited, amorphous In₂O₃:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary crystallisation of the amorphous In₂O₃:H films. The presence of hydroxyl was ascribed to be responsible for the recrystallization and grain growth accompanying the inter-grain In-O-In bounding. Metallic indium was suggested to provide an excess of free electrons in as-deposited In₂O₃ and In₂O₃:H films. According to the ultraviolet photoelectron spectroscopy, the work function of In₂O₃:H increased during crystallisation from 4 eV to 4.4 eV, which corresponds to the oxidation process. Furthermore, transparency simultaneously increased in the infraredspectral region. Water was queried to oxidise metallic indium in UHV at higher temperature as compared to oxygen in ambient air. Secondary ion mass-spectroscopy results revealed that the former process takes place mostly within the top ~50 nm. The optical band gap of In₂O₃:H increased by about 0.2 eV during annealing, indicating a doping effect. This was considered as a likely intra-grain phenomenon caused by both (In⁰)_O^•• and (OH⁻)_O^• point defects. The inconsistencies in understanding of In₂O₃:H crystallisation, which existed in the literature so far, were considered and explained by the multiplicity and disequilibrium of the processes running simultaneously.

Research Advances of Amorphous Metal Oxides in Electrochemical Energy Storage and Conversion

Amorphous metal oxides (AMOs) have aroused great enthusiasm across multiple energy areas over recent years due to their unique properties, such as the intrinsic isotropy, versatility in compositions, absence of grain boundaries, defect distribution, flexible nature, etc. Here, the materials engineering of AMOs is systematically reviewed in different electrochemical applications and recent advances in understanding and developing AMO-based high-performance electrodes are highlighted. Attention is focused on the important roles that AMOs play in various energy storage and conversion technologies, such as active materials in metal-ion batteries and supercapacitors as well as active catalysts in water splitting, metal-air batteries, and fuel cells. The improvements of electrochemical performance in metal-ion batteries and supercapacitors are reviewed regarding the enhancement in active sites, mechanical strength, and defect distribution of amorphous structures. Furthermore, the high electrochemical activities boosted by AMOs in various fundamental reactions are elaborated on and they are related to the electrocatalytic behaviors in water splitting, metal-air batteries, and fuel cells. The applications in electrochromism and high-conducting sensors are also briefly discussed. Finally, perspectives on the existing challenges of AMOs for electrochemical applications are proposed, together with several promising future research directions.

Microstructure, local electronic structure and optical behaviour of zinc ferrite thin films on glass substrate

Zinc ferrite thin films were deposited using a radio-frequency-sputtering method on glass substrates. As-deposited films were annealed at 200°C for 1, 3 and 5 h, respectively. X-ray diffraction studies revealed the amorphous nature of as-grown and annealed films. Thickness of as-deposited film is 96 nm as determined from Rutherford backscattering spectroscopy which remains almost invariant with annealing. Transmission electron microscopic investigations envisaged a low degree of crystalline order in as-deposited and annealed films. Thicknesses estimated from these measurements were almost 62 nm. Roughness values of these films were almost 1-2 nm as determined from atomic force microscopy. X-ray reflectivity measurements further support the results obtained from TEM and AFM. Near-edge X-ray absorption fine structure measurements envisaged 3+ and 2+ valence states of Fe and Zn ions in these films. UV-Vis spectra of these films were characterized by a sharp absorption in the UV region. All films exhibited almost the same value of optical band gap within experimental error, which is close to 2.86 eV.

Intrinsic charge trapping in amorphous oxide films: status and challenges

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO₂, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO₂. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO₂ and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO₂, a-Al₂O₃, a-TiO₂. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO₂ and a-SiO₂ weakens Hf(Si)-O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O^2- ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection conditions.

Tailoring Surface Frustrated Lewis Pairs of In2O3-x (OH)y for Gas-Phase Heterogeneous Photocatalytic Reduction of CO2 by Isomorphous Substitution of In3+ with Bi3

Frustrated Lewis pairs (FLPs) created by sterically hindered Lewis acids and Lewis bases have shown their capacity for capturing and reacting with a variety of small molecules, including H2 and CO2, and thereby creating a new strategy for CO2 reduction. Here, the photocatalytic CO2 reduction behavior of defect-laden indium oxide (In2O3-x (OH) y ) is greatly enhanced through isomorphous substitution of In3+ with Bi3+, providing fundamental insights into the catalytically active surface FLPs (i.e., In-OH···In) and the experimentally observed "volcano" relationship between the CO production rate and Bi3+ substitution level. According to density functional theory calculations at the optimal Bi3+ substitution level, the 6s2 electron pair of Bi3+ hybridizes with the oxygen in the neighboring In-OH Lewis base site, leading to mildly increased Lewis basicity without influencing the Lewis acidity of the nearby In Lewis acid site. Meanwhile, Bi3+ can act as an extra acid site, serving to maximize the heterolytic splitting of reactant H2, and results in a more hydridic hydride for more efficient CO2 reduction. This study demonstrates that isomorphous substitution can effectively optimize the reactivity of surface catalytic active sites in addition to influencing optoelectronic properties, affording a better understanding of the photocatalytic CO2 reduction mechanism.

Intrinsic electron trapping in amorphous oxide

We demonstrate that electron trapping at intrinsic precursor sites is endemic in non-glass-forming amorphous oxide films. The energy distributions of trapped electron states in ultra-pure prototype amorphous (a)-HfO₂ insulator obtained from exhaustive photo-depopulation experiments demonstrate electron states in the energy range of 2-3 eV below the oxide conduction band. These energy distributions are compared to the results of density functional calculations of a-HfO₂ models of realistic density. The experimental results can be explained by the presence of intrinsic charge trapping sites formed by under-coordinated Hf cations and elongated Hf-O bonds in a-HfO₂. These charge trapping states can capture up to two electrons, forming polarons and bi-polarons. The corresponding trapping sites are different from the dangling-bond type defects responsible for trapping in glass-forming oxides, such as SiO₂, in that the traps are formed without bonds being broken. Furthermore, introduction of hydrogen causes formation of somewhat energetically deeper electron traps when a proton is immobilized next to the trapped electron bi-polaron. The proposed novel mechanism of intrinsic charge trapping in a-HfO₂ represents a new paradigm for charge trapping in a broad class of non-glass-forming amorphous insulators.

The toxicology of indium oxide

Indium oxide (In₂O₃) is a technologically important semiconductor essentially used, doped with tin oxide, to form indium tin oxide (ITO). It is poorly soluble in all so far tested physiologic media. After repeated inhalation, In₂O₃ particles accumulate in the lungs. Their mobilization can cause significant systemic exposure over long periods of time. An increasing number of cases of severe lung effects (characterized by pulmonary alveolar proteinosis, emphysema and/or interstitial fibrosis) in workers of the ITO industry warrants a review of the toxicological hazards also of In₂O₃. The database on acute and chronic toxicity/carcinogenicity/genotoxicity/reproductive toxicity as well skin/eye irritation and sensitization is very limited or even lacking. Short-term and subchronic inhalation studies in rats and mice revealed persistent alveolar proteinosis, inflammation and early indicators of fibrosis in the lungs down to concentrations of 1 mg/m³. Epidemiological and medical surveillance studies, serum/blood indium levels in workers as well as data on the exposure to airborne indium concentrations indicate a need for measures to reduce exposure at In₂O₃ workplaces.