A unique framework in BaGa2Sb2: a new Zintl phase with large tunnels

From Three-Dimensional Clathrates to Two-Dimensional Zintl Phases AMSb2 (A = Rb, Cs; M = Ga, In) Composed of Pentagonal M-Sb Rings

Three new antimonide Zintl phases, RbGaSb₂, CsGaSb₂, and CsInSb₂, were discovered during exploration of corresponding A-M-Sb (A = Rb, Cs; M = Ga, In) ternary systems while searching for new clathrates. The AGaSb₂ phases crystallize in the tetragonal space group P4₂/nmc (No. 137) in the LiBS₂ structure type, while CsInSb₂ crystallizes in lower symmetry in the orthorhombic space group Cmce (No. 64) in the KGaSb₂ structure type with additional disorder of one of the Cs sites. The crystal structures of all three reported AMSb₂ compounds are composed of two-dimensional [MSb₂]^- tetrahedral layers separated by Rb⁺ or Cs⁺ cations. [MSb₂]^- layers are built from fused M-Sb pentagons and hexagons, which are also the main structural units for A₈M₂₇Sb₁₉ clathrate cages. The semiconductor nature of AMSb₂ was suggested by band structure calculations and confirmed by transport property characterization. CsGaSb₂ is a rare example of an n-type pnictide Zintl phase. All reported compounds exhibit low thermal conductivity typical for complex antimonides of heavy elements.

Vacancy ordering induced topological electronic transition in bulk Eu2ZnSb2

Metal-semiconductor transitions from changes in edge chirality from zigzag to armchair were observed in many nanoribbon materials, especially those based on honeycomb lattices. Here, this is generalized to bulk complex Zintl semiconductors, exemplified by Eu₂ZnSb₂ where the Zn vacancy ordering plays an essential role. Five Eu₂ZnSb₂ structural models are proposed to guide transmission electron microscopy imaging. Zigzag vacancy ordering models show clear metallicity, while the armchair models are semiconducting with indirect bandgaps that monotonously increase with the relative distances between neighboring ZnSb₂ chains. Topological electronic structure changes based on cation ordering in a Zintl compound point toward tunable and possibly switchable topological behavior, since cations in these are often mobile. Thus, their orderings can often be adjusted by temperature, minor alloying, and other approaches. We explain the electronic structure of an interesting thermoelectric and point the way to previously unidentified types of topological electronic transitions in Zintl compounds.

The Zintl phases AIn2As2 (A = Ca, Sr, Ba): new topological insulators and thermoelectric material candidates

Recently, there has been a lot of interest in topological insulators (TIs), being electronic materials, which are insulating in their bulk but with the gapless exotic metallic state on their surface. The surface states observed in such materials behave as a perfect conductor thereby making them more suited for several cutting-edge technological applications such as spintronic devices. Here, we report the synthesis and structural characterization of the Zintl phases AIn2As2 (A = Ca, Sr, Ba), which could become a new class of TIs. Crystal structure elucidation by single-crystal X-ray diffraction reveals that CaIn2As2 and SrIn2As2 are isostructural and crystallize in the EuIn2P2 structure type (space group P63/mmc, no. 194, Z = 2) with unit cell parameters a = 4.1482(6) Å, c = 17.726(4) Å; and a = 4.2222(6) Å, c = 18.110(3) Å, respectively. Their hexagonal structure is made up of alternating [In2As2]2- layers separated by slabs of A2+ cations. BaIn2As2 on the other hand crystallizes in the monoclinic EuGa2P2 structure type (space group P2/m, no. 10, Z = 4) with unit cell parameters a = 10.2746(11) Å, b = 4.3005(5) Å, c = 13.3317(14) Å and β = 95.569(2)°. This structure is also layered, and it is made up of different type of polyanionic [In2As2]2- units and Ba2+ cations. The valence electron count for all three compounds adheres to the Zintl-Klemm formalism, and all elements achieve closed-shell electronic configurations. Bulk electronic structure calculations indicate the opening of a bandgap Eg ∼ 0.03 eV (CaIn2As2 and Sr2In2As2), and Eg ∼0.21 eV (BaIn2As2) in the absence of strain and spin-orbit coupling (SOC). These results argue in favor of the realization of a nontrivial topological insulator state under the influence of tensile strain and SOC. Preliminary transport properties on BaIn2As2 are suggestive of a degenerate p-type semiconductor-a behavior which is sought after in thermoelectric (TE) materials. Since both TIs and excellent TE materials are known to favor the same material properties such as narrow bandgap, heavy elements, and strong SOC, these three Zintl phases are also projected as candidates TE materials.

Computational prediction of a high ZT of n-type Mg3Sb2-based compounds with isotropic thermoelectric conduction performance

N-type Mg₃Sb₂-based Zintl compounds are proved to be high-performance thermoelectric materials with multiple degenerate valleys and low lattice thermal conductivity. Here, we investigate the electronic band structure and the thermoelectric properties of n-type Mg₃Sb₂ using first-principles density functional theory. A high ZT of 3.1 at 725 K is obtained when the minimum lattice thermal conductivity and the optimal carrier concentration are reached. The calculated thermoelectric performance demonstrates that Mg₃Sb₂ possesses an isotropic character in thermoelectric transport. Furthermore, the calculated lattice thermal conductivity κ_L reveals that the unusually low κ_L in Mg₃Sb₂ predominantly originates from the large Grüneisen parameter γ.

Semiconducting Ba3Sn3Sb4 and Metallic Ba7-xSn11Sb15-y (x = 0.4, y = 0.6) Zintl Phases

We report the discovery of two ternary Zintl phases Ba₃Sn₃Sb₄ and Ba_7-xSn₁₁Sb_15-y (x = 0.4, y = 0.6). Ba₃Sn₃Sb₄ adopts the monoclinic space group P2₁/c with a = 14.669(3) Å, b = 6.9649(14) Å, c = 13.629(3) Å, and β = 104.98(3)°. It features a unique corrugated two-dimensional (2D) structure consisting of [Sn₃Sb₄]^6- layers extending along the ab-plane with Ba²⁺ atoms sandwiched between them. The nonstoichiometric Ba_6.6Sn₁₁Sb_14.4 has a complex one-dimensional (1D) structure adopting the orthorhombic space group Pnma, with unit cell parameters a = 37.964(8) Å, b = 4.4090(9) Å, and c = 24.682(5) Å. It consists of large double Sn-Sb ribbons separated by Ba²⁺ atoms. Ba₃Sn₃Sb₄ is an n-type semiconductor which has a narrow energy gap of ∼0.18 eV and a room temperature carrier concentration of ∼4.2 × 10¹⁸ cm^-3. Ba_6.6Sn₁₁Sb_14.4 is determined to be a metal with electrons being the dominant carriers.

Thermoelectric properties and electronic structure of the Zintl phase Sr₅In₂Sb₆ and the Ca(5-x)Sr(x)In₂Sb₆ solid solution

The Zintl phase Sr5In2Sb6 is isostructural with Ca5In2Sb6-a promising thermoelectric material with a peak zT of 0.7 when the carrier concentration is optimized by doping. Density functional calculations for Sr5In2Sb6 reveal a decreased energy gap and decreased valence band effective mass relative to the Ca analog. Chemical bonding analysis using the electron localizability indicator was found to support the Zintl bonding scheme for this structure type. High temperature transport measurements of the complete Ca(5-x)Sr(x)In2Sb6 solid solution were used to investigate the influence of the cation site on the electronic and thermal properties of A5In2Sb6 compounds. Sr was shown to be fully miscible on the Ca site. The higher density of the Sr analog leads to a slight reduction in lattice thermal conductivity relative to Ca5In2Sb6, and, as expected, the solid solution samples have significantly reduced lattice thermal conductivities relative to the end member compounds.

Graphene boosts thermoelectric performance of a Zintl phase compound

The nanocomposite of Mg₃Sb₂-based Zintl phase compound, fabricated by utilizing, GNS, as a nanocomposite additive, enhances significantly the thermoelectric performance.

Enhancing thermoelectric properties of a p-type Mg3Sb2- based Zintl phase compound by Pb substitution in the anionic framework

Pb substitution on anionic site of Mg₃Sb₂ structure enhances the power factor and simultaneously reduces the thermal conductivity which leads to a ZT ≈ 0.84 at 773 K for Mg₃Sb_1.8Pb_0.2 alloy. The enhanced ZT of this system is comparable to bismuth telluride and selenide industrial materials which are toxic and expensive.

Yb5Ga2Sb6: a mixed valent and narrow-band gap material in the RE5M2X6 family

A new compound Yb5Ga2Sb6 was synthesized by the metal flux technique as well as high frequency induction heating. Yb5Ga2Sb6 crystallizes in the orthorhombic space group Pbam (no. 55), in the Ba5Al2Bi6 structure type, with a unit cell of a = 7.2769(2) Å, b = 22.9102(5) Å, c = 4.3984(14) Å, and Z = 2. Yb5Ga2Sb6 has an anisotropic structure with infinite anionic double chains (Ga2Sb6)(10-) cross-linked by Yb(2+) and Yb(3+) ions. Each single chain is made of corner-sharing GaSb4 tetrahedra. Two such chains are bridged by Sb2 groups to form double chains of 1/∞ [Ga2Sb6(10-)]. The compound satisfies the classical Zintl-Klemm concept and is a narrow band gap semiconductor with an energy gap of around 0.36 eV calculated from the electrical resistivity data corroborating with the experimental absorption studies in the IR region (0.3 eV). Magnetic measurements suggest Yb atoms in Yb5Ga2Sb6 exist in the mixed valent state. Temperature dependent magnetic susceptibility data follows the Curie-Weiss behavior above 100 K and no magnetic ordering was observed down to 2 K. Experiments are accompanied by all electron full-potential linear augmented plane wave (FP-LAPW) calculations based on density functional theory to calculate the electronic structure and density of states. The calculated band structure shows a weak overlap of valence band and conduction band resulting in a pseudo gap in the density of states revealing semimetallic character.

Thermoelectric properties and electronic structure of the zintl-phase Sr(3)AlSb(3)

The Zintl-phase Sr3 AlSb3 , which contains relatively earth-abundant and nontoxic elements, has many of the features that are necessary for good thermoelectric performance. The structure of Sr3 AlSb3 is characterized by isolated anionic units formed from pairs of edge-sharing tetrahedra. Its structure is distinct from previously studied chain-forming structures, Ca3 AlSb3 and Sr3 GaSb3 , both of which are known to be good thermoelectric materials. DFT predicts a relatively large band gap in Sr3 AlSb3 (Eg ≈1 eV) and a heavier band mass than that found in other chain-forming A3 MSb3 phases (A=Sr, Ca; M=Al, Ga). High-temperature transport measurements reveal both high resistivity and high Seebeck coefficients in Sr3 AlSb3 , which is consistent with the large calculated band gap. The thermal conductivity of Sr3 AlSb3 is found to be extremely low (≈ 0.55 W mK(-1) at 1000 K) due to the large, complex unit cell (56 atoms per primitive cell). Although the figure of merit (zT) has not been optimized in the current study, a single parabolic band model suggests that, when successfully doped, zT≈ 0.3 may be obtained at 600 K; this makes Sr3 AlSb3 promising for waste-heat recovery applications. Doping with Zn(2+) on the Al(3+) site has been attempted, but does not lead to the expected increase in carrier concentration.

Structure and properties of single crystalline CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2

Single crystals of CaMg(2)Bi(2), EuMg(2)Bi(2), and YbMg(2)Bi(2) were obtained from a Mg-Bi flux cooled to 650 °C. These materials crystallize in the CaAl(2)Si(2) structure-type (P ̅3m1, No. 164), and crystal structures are reported from refinements of single crystal and powder X-ray diffraction data. EuMg(2)Bi(2) displays an antiferromagnetic transition near 7 K, which is observed via electrical resistivity, magnetization, and specific heat capacity measurements. Magnetization measurements on YbMg(2)Bi(2) reveal a weak diamagnetic moment consistent with divalent Yb. Despite charge-balanced empirical formulas, all three compounds are p-type conductors with Hall carrier concentrations of 2.0(3) × 10(19) cm(-3) for CaMg(2)Bi(2), 1.7(1) × 10(19) cm(-3) for EuMg(2)Bi(2), and 4.6(7) × 10(19) cm(-3) for YbMg(2)Bi(2), which are independent of temperature to 5 K. The electrical resistivity decreases with decreasing temperature and the resistivity ratios ρ(300 K)/ρ(10 K) ≤ 1.6 in all cases, indicating significant defect scattering.

Zintl phases for thermoelectric devices

By converting waste heat into electricity and improving the efficiency of refrigeration systems, thermoelectric devices could play a significant role in solving today's energy problems. Increasing the thermoelectric efficiency (as measured by the thermoelectric material's figure-of-merit, zT) is critical to the development of this technology. Complex Zintl phases, in particular, make ideal candidates for thermoelectric materials because the necessary "electron-crystal, phonon-glass" properties can be engineered with an understanding of the Zintl chemistry. A recent example is the discovery that Yb(14)MnSb(11), a transition metal Zintl compound, has twice the zT as the material currently in use at NASA. This perspective outlines a strategy to discover new high zT materials in Zintl phases, and presents results pointing towards the success of this approach.

Sr2MnSb2: A New Ternary Transition Metal Zintl Phase

A transition metal-containing Zintl phase, Sr2MnSb2, was prepared from a stoichiometric combination reaction of the elements in Sn flux, and its structure was determined by single-crystal X-ray diffraction methods. The compound crystallizes in the orthorhombic space group Pnma with a = 15.936(3) A, b = 14.498(3) A, c = 8.2646(17) A, and Z = 12. The structure of Sr2MnSb2 is composed of corrugated layers of corner- and edge-shared MnSb4 tetrahedra. The basic building unit of the layer is a [Mn3Sb6]12- cluster composed of three edge-shared MnSb4 tetrahedra. These trinuclear clusters share four Sb vertexes to form a layer with cavities. Sr2+ cations are located at the inter- and intralayer space. Magnetic susceptibility measurements indicate an effective magnetic moment of 4.85 mu(B), a value smaller than what would be expected from Mn2+ ions.

Na6 TlSb4: synthesis, structure, and bonding. An electron-rich salt with a chain conformation and a Tl-Tl bond length determined by the cation

The title compound forms on fusion and annealing of a stoichiometric mixture of the elements. The structure was determined by single-crystal X-ray diffraction methods in the monoclinic space group C2/c, with a = 15.154(3) A, b = 10.401(2) A, c = 17.413(4) A, and beta = 113.57(3) degrees, Z = 8. Four-membered Tl-Sb1-Sb4-Sb3 rings interlinked by pairs of Sb2 bridges generate swinglike repeat units [Tl(2)Sb(8)] that are further interlinked through external Tl-Tl bonds to form infinite one-dimensional chains. Cations play a major role in the structure. In contrast to the Zintl-phase K(6)Tl(2)Sb(3) with similar swinglike [Tl(4)Sb(6)] repeating units and Tl-Tl interlinkages, Na(6)TlSb(4) has a more compact conformation of the chains and a notably smaller cell volume than expected. The new phase is metallic with two excess cations according to empirical electron counting, EHTB band calculations for the anion, and the compound's measured resistivities and magnetic susceptibilities. The notably shorter Tl-Tl bond in the present salt (2.954 A) can be directly attributed to the smaller cation and reduced intercation repulsions across that bond.

Synthesis and characterization of Cs(5)In(3)As(4) with a structure of two coexisting "polymorphic" forms of different dimensionality

The title compound was made by fusion of a stoichiometric mixture of the pure elements at 500 degrees C. The structure (monoclinic, P2(1)/c, Z = 8, a = 17.037(6), b = 12.253(1), c = 18.105(4) A, beta = 117.24(2) degrees) is made of alternating one- and two-dimensional sections with the same composition of Cs(5)In(3)As(4), and can be considered as two coexisting polymorphic forms of the same compound. The chains and layers in these sections are made of repeating semicubane motifs of [In(3)As(4)](5)(-) that are connected to each other by In-As bonds in the chains, and by both In-As and In-In bonds in the layers. According to magnetic measurement and EHMO calculations, Cs(5)In(3)As(4) is a closed-shell compound that fulfills the Zintl concept.