Experimental and Theoretical Investigation on the Relative Stability of the PdS2- and Pyrite-Type Structures of PdSe2

Modulating Carrier Dynamics in PdSe2: The Role of Pressure in Electronic and Phononic Interactions

PdSe2 is a puckered transition metal dichalcogenide that has been reported to undergo a two-dimensional to three-dimensional structural transition under pressure. Here, we investigated the electronic and phononic evolution of PdSe2 under high pressure using pump-probe spectroscopy. We observed the electronic intraband and interband transitions occurring in the d orbitals of Pd, revealing the disappearance of the Jahn-Teller effect under high pressure. Furthermore, we found that the decay rates of interband recombination and intraband relaxation lifetimes change at 3 and 7 GPa, respectively. First-principles calculations suggest that the bandgap closure slows the decay rate of interband recombination after 3 GPa, while the saturation of phonon-phonon scattering is the main reason for the relatively constant intraband relaxation lifetime. Our work provides a novel perspective for understanding the evolution of the electron and modulation of the carrier dynamics by phonons under pressure.

Structural phase transition and potential superconductivity initiated by pressure-driven in 1T-CrSe2

The exploration of the superconducting properties of antiferromagnetic parent compounds containing transition metals under pressure provides a unique idea for finding and designing superconducting materials with better performance. In this paper, the close relationship between the possible superconductivity and structure phase transition of the typical van der Waals layered material 1T-CrSe2induced by pressure is studied by means of electrical transport and x-ray diffraction for the first time. We introduce the possibility of pressure-induced superconductivity at 20 GPa, with a criticalTcof approximately at 4 K. The superconductivity persists up to the highest measured pressure of 70 GPa, with a maximumTc∼ 5 K at 24 GPa. We observed a structure phase transition fromP-3m1 toC2/mspace group in the range of 9.4-11.7 GPa. The results show that the structural phase transition leads to the metallization of 1T-CrSe2and the further pressure effect makes the superconductivity appear in the new structure. The material undergoes a transition from a two-dimensional layered structure to a three-dimensional structure under pressure. This is the first time that possible superconductivity has been observed in 1T-CrSe2.

Direct Observation of Photon Induced Giant Band Renormalization in 2D PdSe2 Dichalcogenide by Transient Absorption Spectroscopy

Insight into fundamental light-matter interaction as well as underlying photo-physical processes is crucial for the development of novel optoelectronic devices. Palladium diselenide (PdSe2 ), an important representative of emerging 2D noble metal dichalcogenides, has gain considerable attention owing to its unique optical, physical, and chemical properties. In this study, 2D PdSe2 nanosheets (NSs) are prepared using the liquid-phase exfoliation method. A broadband carrier relaxation dynamics from visible to near-infrared bands are revealed using a time-resolved transient absorption spectrometer, giving results that indicate band filling and bandgap renormalization (BGR) effects in the 2D PdSe2 NSs. The observed blue-shift of the transient absorption spectra at the primary stage and the subsequent red-shift can be ascribed to this BGR effect. These findings reveal the many-body character of the 2D TMDs material and may hold keys for applications in the field of optoelectronics and ultrafast photonics.

Ultrafast transient absorption measurements of photocarrier dynamics in PdSe2

We investigate the photocarrier dynamics in bulk PdSe2, a layered transition metal dichalcogenide with a novel pentagonal structure and unique electronic and optical properties. Using femtosecond transient absorption microscopy, we study the behavior of photocarriers in mechanically exfoliated bulk PdSe2 flakes at room temperature. By employing a 400 nm ultrafast laser pulse, electron-hole pairs are generated, and their dynamics are probed using an 800 nm detection pulse. Our findings reveal that the lifetime of photocarriers in bulk PdSe2 is approximately 210 ps. Furthermore, by spatially resolving the differential reflection signal, we determine a photocarrier diffusion coefficient of about 7.3 cm2 s-1. Based on these results, we estimate a diffusion length of around 400 nm and a photocarrier mobility of approximately 300 cm2 V-1 s-1. These results shed light on the ultrafast optoelectronic properties of PdSe2, offer valuable insights into photocarriers in this emerging material, and enable design of high-performance optoelectronic devices based on PdSe2.

Unexpected giant negative area compressibility in palladium diselenide

Negative area compressibility (NAC) is a counterintuitive 'squeeze-expand' behavior in solids that is very rare but attractive due to possible pressure-response applications and coupling with rich physicochemical properties. Herein, NAC behavior is reported in palladium diselenide with a large magnitude and wide pressure range. We discover that, apart from the rigid flattening of layers that has been generally recognized, the unexpected giant NAC effect in PdSe2 largely comes from anomalous elongation of intralayer chemical bonds. Both structural variations are driven by intralayer-to-interlayer charge transfer with enhanced interlayer interactions under pressure. Our work updates the mechanical understanding of this anomaly and establishes a new guideline to explore novel compression-induced properties.

Direct Observation of Orbital Driven Strong Interlayer Coupling in Puckered Two-Dimensional PdSe2

Interlayer coupling between individual unit layers is known to be critical in manipulating the layer-dependent properties of two-dimensional (2D) materials. While recent studies have revealed that several 2D materials with significant degrees of interlayer interaction (such as black phosphorus) show strongly layer-dependent properties, the origin based on the electronic structure is drawing intensive attention along with 2D materials exploration. Here, the direct observation of a highly dispersive single electronic band along the interlayer direction in puckered 2D PdSe₂ as an experimental hallmark of strong interlayer couplings is reported. Remarkably large band dispersion along the k_z -direction near Fermi level, which is even wider than the in-plane one, is observed by the angle-resolved photoemission spectroscopy measurement. Employing X-ray absorption spectroscopy and density functional theory calculations, it is revealed that the strong interlayer coupling in 2D PdSe₂ originates from the unique directional bonding of Pd d orbitals associated with unexpected Pd 4d⁹ configuration, which consequently plays a decisive role for the strong layer-dependency of the band gap.

Pentagonal PdX2 (X = S, Se) nanosheets with X vacancies as high-performance electrocatalysts for the hydrogen evolution reaction

Two-dimensional transition metal dichalcogenides (TMDs) have emerged as promising catalysts for the hydrogen evolution reaction (HER). However, they typically require the engineering of additional actives sites (e.g. vacancies and dopants)...

Highly Efficient, Ultrabroad PdSe2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism

The noble transition metal dichalcogenide palladium diselenide (PdSe₂) is an ideal candidate material for broad-spectrum photodetection owing to the large bandgap tunability, high mobility, low thermal conductivity, and large Seebeck coefficient. In this study, self-powered ultrabroadband PdSe₂ photodetectors from the visible-infrared to terahertz (THz) region driven by a mutiphysical mechanism are reported. In the visible-infrared region, the photogenerated electron-hole pairs in the PdSe₂ body are quickly separated by the built-in electric field at the metal-semiconductor interface and achieve a photoresponsivity of 28 A·W^-1 at 405 nm and 0.4 A·W^-1 at 1850 nm. In the THz region, PdSe₂ photodetectors display a room-temperature responsivity of 20 mA·W^-1 at 0.10 THz and 5 mA·W^-1 at 0.24 THz based on efficient production of hot carriers in an antenna-assisted structure. Owing to the fast response speed of ∼7.5 μs and low noise equivalent power of ∼900 pW·Hz^-1/2, high-resolution transmission THz imaging is demonstrated under an ambient environment at room temperature. Our research validates the great potential of PdSe₂ for broadband photodetection and provides a possibility for future optoelectronic applications.

Thickness-dependent ultrafast charge-carrier dynamics and coherent acoustic phonon oscillations in mechanically exfoliated PdSe2 flakes

Recently, palladium diselenide (PdSe₂) has emerged as a promising material with potential applications in electronic and optoelectronic devices due to its intriguing electronic and optical properties. The performance of the device is strongly dependent on the charge-carrier dynamics and the related hot phonon behavior. Here, we investigate the photoexcited-carrier dynamics and coherent acoustic phonon (CAP) oscillations in mechanically exfoliated PdSe₂ flakes with a thickness ranging from 10.6 nm to 54 nm using time-resolved non-degenerate pump-probe transient reflection (TR) spectroscopy. The results imply that the CAP frequency is thickness-dependent. Polarization-resolved transient reflection (PRTR) measurements reveal the isotropic charge-carrier relaxation dynamics and the CAP frequency in the 10.6 nm region. In addition, the deformation potential (DP) mechanism dominates the generation of the CAP. Moreover, a sound velocity of 6.78 × 10³ m s^-1 is extracted from the variation of the oscillation period with the flake thickness and the delay time of the acoustic echo. These results provide insight into the ultrafast optical coherent acoustic phonon and optoelectronic properties of PdSe₂ and may open new possibilities for PdSe₂ applications in THz-frequency mechanical resonators.

Thickness-dependent anisotropic transport of phonons and charges in few-layered PdSe2

So far, layered PdSe₂ has attracted much attention due to its completely tunable band-gap with varying layer numbers, yet the thickness-dependent transporting properties have been rarely studied. We have systematically studied the electronic structures, phonon and charge transport properties, and thermoelectric properties of few-layered (from 1L to 4L) and bulk PdSe₂ by first-principles calculations and Boltzmann transport theory. As the thickness increases, the energy levels of band edges relative to 4s of selenium move oppositely due to their different bonding states, leading to the power-law decrease of the band-gap. Meanwhile, the electron effective mass decreases rapidly while the hole effective mass increases significantly compared with those unperturbed. Calculations on elastic constants reveal that both bulk and few-layered PdSe₂ are mechanically stable, and the bulk is ductile with a Poisson's ratio of 0.27. The shifts of Raman active modes with respect to the thickness as well as their Gruneisen parameters are analyzed and the underlying physics is discussed. At room temperature, the thermal conductivities of the bulk are 7.7, 10.1 and 0.9 W m^-1 K^-1 along the a, b and c axes, respectively. It is found that the low-frequency modes (<2.0 THz) contribute about 80% of in-plane thermal conductivities. Due to the enhanced contribution from the ZA mode, the thermal conductivity of few-layered PdSe₂ is much larger than that of the bulk. The ZA mode is mainly scattered by itself and the Umklapp scattering dominates in the process as the thickness increases. Calculations on charge transport reveal that the electron mobility increases from 2.5-13.2 (1L) to 121.9-167.8 (4L) cm² V^-1 s^-1 with the decreasing anisotropy μ_b/μ_a, while the hole mobility remains to be ∼20 cm² V^-1 s^-1, which is in good agreement with the experimental results. Calculations on the thermoelectric properties reveal that the ZT value as well as the power factor increases largely as the thickness increases and it gets to be optimum for the triple layer. Interestingly, the transport of electrons and phonons is decoupled along the out-of-plane direction, which makes bulk PdSe₂ exhibit good thermoelectric performance along the c axis.

Observation of Anisotropic Magnetoresistance in Layered Nonmagnetic Semiconducting PdSe2

Anisotropy in crystals usually has remarkable consequences in two-dimensional (2D) materials, for example, black phosphorus, PdSe₂, and SnS, arising from different lattice periodicities along different crystallographic directions. Electrical anisotropy has been successfully demonstrated in 2D materials, but anisotropic magnetoresistance in 2D materials is rarely studied. Herein, we report anisotropic magnetoresistance in layered nonmagnetic semiconducting PdSe₂ flakes. Anisotropic magnetoresistance along the two crystalline axes under a perpendicular magnetic field is demonstrated, and the magnetoresistance along the a-axis is apparently different from the magnetoresistance along the b-axis. The magnetoresistance can also be flexibly tuned by applying a gate voltage, leveraging the semiconductor properties of PdSe₂. The computed anisotropic electronic density of states and electronic mobility with ab initio density functional calculations support the anisotropic and measured magnetoresistance. Our findings advance the understanding of magnetoresistance in anisotropic transition-metal dichalcogenides and pave the way for potential applications in anisotropic spintronic devices.

Strain-Driven Switchable Thermal Conductivity in Ferroelastic PdSe2

Materials with either high or low lattice thermal conductivity are remarkable for thermal management with applying in high-power electronic, optoelectronic, and thermoelectric devices. The realization of thermal switch between high and low thermal conductivities can greatly promote the ability of thermal energy control. Here, based on first-principles calculations, we propose that ferroelastic PdSe₂ can achieve continuous switchable thermal conductivity through strain-driven structural phase transition. Thermal switch we explored mainly stems from soft mechanical properties and strong anharmonicity of the structure after ferroelastic phase transition. We demonstrate that the maximum ratio of thermal switch can reach an order of magnitude, indicating PdSe₂ as a promising candidate in thermal devices.

Electronic and topological properties of group-10 transition metal dichalcogenides

The group 10 transition metal dichalcogenides (TMDs) (MX ₂: M = Ni, Pd, Pt; X = S, Se, Te) have attracted much attention in the last few decades because of observation of exotic phases and phenomena such as superconductivity (SC), topological surface states (TSSs), type II Dirac fermions, helical spin texture, Rashba effect, 3D Dirac plasmons, metal-insulator transitions, charge density waves (CDW) etc. In this review, we cover the experimental and theoretical progress on the physical phenomena influenced by the strong electron-electron correlation of the group-10 TMDs from the past to the present. We have especially emphasized on the SC and topological phases in the bulk as well as in atomically thin materials.

Giant nonlinear optical activity in two-dimensional palladium diselenide

Nonlinear optical effects in layered two-dimensional transition metal chalcogenides have been extensively explored recently because of the promising prospect of the nonlinear optical effects for various optoelectronic applications. However, these materials possess sizable bandgaps ranging from visible to ultraviolet region, so the investigation of narrow-bandgap materials remains deficient. Here, we report our comprehensive study on the nonlinear optical processes in palladium diselenide (PdSe₂) that has a near-infrared bandgap. Interestingly, this material exhibits a unique thickness-dependent second harmonic generation feature, which is in contrast to other transition metal chalcogenides. Furthermore, the two-photon absorption coefficients of 1–3 layer PdSe₂ (β ~ 4.16 × 10⁵, 2.58 × 10⁵, and 1.51 × 10⁵ cm GW⁻¹) are larger by two and three orders of magnitude than that of the conventional two-dimensional materials, and giant modulation depths (α_s ~ 32%, 27%, and 24%) were obtained in 1–3 layer PdSe₂. Such unique nonlinear optical characteristics make PdSe₂ a potential candidate for technological innovations in nonlinear optoelectronic devices.

Strong nonlinearities in 2D materials can lead to interesting applications in optoelectronics. Here the authors investigate the optical nonlinearity of palladium diselenide, determine the layer dependent two photon absorption efficiency and the saturable absorption modulation depth.

Tunable photocatalytic water splitting and solar-to-hydrogen efficiency in β-PdSe2 monolayer

Direct production of hydrogen from photocatalytic water splitting is a potential solution to overcome global energy crisis.

Two-Dimensional Noble-Metal Chalcogenides and Phosphochalcogenides

Noble-metal chalcogenides, dichalcogenides, and phosphochalcogenides are an emerging class of two-dimensional materials. Quantum confinement (number of layers) and defect engineering enables their properties to be tuned over a broad range, including metal-to-semiconductor transitions, magnetic ordering, and topological surface states. They possess various polytypes, often of similar formation energy, which can be accessed by selective synthesis approaches. They excel in mechanical, optical, and chemical sensing applications, and feature long-term air and moisture stability. In this Minireview, we summarize the recent progress in the field of noble-metal chalcogenides and phosphochalcogenides and highlight the structural complexity and its impact on applications.

Giant Thickness-Tunable Bandgap and Robust Air Stability of 2D Palladium Diselenide

Uncovering the thickness-dependent electronic property and environmental stability for 2D materials are crucial issues for promoting their applications in high-performance electronic and optoelectronic devices. Herein, the extrahigh air stability and giant tunable electronic bandgap of chemical vapor deposition (CVD)-derived few-layer PdSe₂ on Au foils, by using scanning tunneling microscope/spectroscopy (STM/STS), are reported. The robust stability of 2D PdSe₂ is uncovered by the observation of nearly defect/adsorption-free atomic lattices on long-time air-exposed samples. A one-to-one correspondence between the electronic bandgap (from ≈1.15 to ≈0 eV) and thickness of PdSe₂ /Au (from bilayer to bulk) is established. It is also revealed that few-layer semiconducting PdSe₂ flakes present zero-gap edges, induced by hybridization of Pd 4d and Se 4p orbitals. This work hereby provides straightforward evidence for the thickness-tunable electronic property and air stability of 2D semiconductors, thus shedding light on their applications in next-generation electronic devices.

Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystals

Palladium diselenide (PdSe₂), a peculiar noble metal dichalcogenide, has emerged as a new two-dimensional material with high predicted carrier mobility and a widely tunable band gap for device applications. The inherent in-plane anisotropy endowed by the pentagonal structure further renders PdSe₂ promising for novel electronic, photonic, and thermoelectric applications. However, the direct synthesis of few-layer PdSe₂ is still challenging and rarely reported. Here, we demonstrate that few-layer, single-crystal PdSe₂ flakes can be synthesized at a relatively low growth temperature (300 °C) on sapphire substrates using low-pressure chemical vapor deposition (CVD). The well-defined rectangular domain shape and precisely determined layer number of the CVD-grown PdSe₂ enable us to investigate their layer-dependent and in-plane anisotropic properties. The experimentally determined layer-dependent band gap shrinkage combined with first-principle calculations suggest that the interlayer interaction is weaker in few-layer PdSe₂ in comparison with that in bulk crystals. Field-effect transistors based on the CVD-grown PdSe₂ also show performances comparable to those based on exfoliated samples. The low-temperature synthesis method reported here provides a feasible approach to fabricate high-quality few-layer PdSe₂ for device applications.

Structural stability of single-layer PdSe2 with pentagonal puckered morphology and its nanotubes

Two-dimensional (2D) materials have gained a lot of attention being a new class of materials with unique properties that could influence future technologies. Concomitant computational design and discovery of new two-dimensional materials have therefore become a significant part of modern materials research. The stability of these predicted materials has emerged as the main issue due to drawbacks of the periodic boundary condition approximation that allow one to pass common criteria of stability. Here, based on first-principle calculations, we demonstrate structural stability and instability of several recently proposed 2D materials with pentagonal morphology including the experimentally exfoliated single-layer PdSe2. It is found that an appropriate orientation of the central Pd sublattice with respect to Se2 dimers effectively compensates all mechanical stress and preserves the planar structure of the PdSe2 nanoclusters, while the flakes of all other materials having pentagonal morphology exhibit non-zero curvature induced by excessive interatomic forces. The relative energies of the PdSe2 monolayer and nanotubes per formula unit also confirm that the planar monolayer is a global energy minimum. Like the monolayer, (n,0) PdSe2 tubes are indirect band gap semiconductors with similar band gaps, while (n,n) tubes reveal indirect-direct band gap transitions following the increase of the tube diameter. Small strain energies of large diameter tubes propose their possible experimental realization for various optoelectronic applications.

Anisotropic Growth and Scanning Tunneling Microscopy Identification of Ultrathin Even-Layered PdSe2 Ribbons

Palladium diselenide (PdSe₂ ) is an emerging 2D layered material with anisotropic optical/electrical properties, extra-high carrier mobility, excellent air stability, etc. So far, ultrathin PdSe₂ is mainly achieved via mechanical exfoliation from its bulk counterpart, and the direct synthesis is still challenging. Herein, the synthesis of ultrathin 2D PdSe₂ on conductive Au foil substrates via a facile chemical vapor deposition route is reported. Intriguingly, an anisotropic growth behavior is detected from the evolution of ribboned flakes with large length/width ratios, which is well explained from the orthorhombic symmetry of PdSe₂ . A unique even-layered growth mode from 2 to 20 layers is also confirmed by the perfect combination of onsite scanning tunneling microscopy characterizations, through deliberately scratching the flake edge to expose both even and odd layers. This even-layered, ribboned 2D material is expected to serve as a perfect platform for exploring unique physical properties, and for developing high-performance electronic and optoelectronic devices.

Ferroelastic lattice rotation and band-gap engineering in quasi 2D layered-structure PdSe2 under uniaxial stress

Transition metal dichalcogenides (TMDCs) have attracted extensive attention in recent years for their novel physical and chemical properties as well as promising applications in the future. In the present paper, based on first-principles simulations, we focused on the bulk of the TMDC material PdSe₂ and provided new insights into its unique structural properties and electronic structures under uniaxial stress. For the first time, we revealed that this orthorhombic PdSe₂ is an intrinsic ferroelastic material with stress-driven 90° lattice rotation in the layer stacking direction. Strikingly, the ferroelastic phase transition originated from the bond reconstructions in the unusual square-planar (PdSe₄)^2- structural units. Specifically, low switching barriers and strong ferroelastic signals rendered room-temperature shape memory accessible. Moreover, the ferroelastic phase transition was accompanied with semiconductor-to-metal-to-semiconductor transitions under uniaxial compressive stress, which could be applied in electronic switching devices. In addition, the band gap was closely associated to the interlayer spacing, which could be engineered by the uniaxial tensile stress. These outstanding stress-engineered properties suggest that orthorhombic PdSe₂ is a promising material for potential applications in microelectromechanical and nanoelectronic devices.

The O-O Bonding and Hydrogen Storage in the Pyrite-type PtO2

We have synthesized pyrite-type PtO₂ (py-PtO₂) at 50-60 GPa and successfully recovered it at 1 bar. The observed O-O stretching vibration in Raman spectra provides direct evidence for inter-oxygen bonding in the structure. We also identified the O-H vibrations in py-PtO₂ synthesized from the low-temperature areas, indicating hydrogenation, py-PtO₂H _x ( x ≤ 1). Diffraction patterns are consistent with a range of degrees of hydrogenation controlled by temperature. We found that py-PtO₂ has a high bulk modulus, 314 ± 4 GPa. The chemical behaviors found in py-PtO₂ have implications for the hydrogen storage in materials with anion-anion bonding, and the geochemistry of oxygen, hydrogen, and transition metals in the deep planetary interiors.

High-Performance, Room Temperature, Ultra-Broadband Photodetectors Based on Air-Stable PdSe2

Photodetection over a broad spectral range is crucial for optoelectronic applications such as sensing, imaging, and communication. Herein, a high-performance ultra-broadband photodetector based on PdSe₂ with unique pentagonal atomic structure is reported. The photodetector responds from visible to mid-infrared range (up to ≈4.05 µm), and operates stably in ambient and at room temperature. It promises improved applications compared to conventional mid-infrared photodetectors. The highest responsivity and external quantum efficiency achieved are 708 A W^-1 and 82 700%, respectively, at the wavelength of 1064 nm. Efficient optical absorption beyond 8 µm is observed, indicating that the photodetection range can extend to longer than 4.05 µm. Owing to the low crystalline symmetry of layered PdSe₂ , anisotropic properties of the photodetectors are observed. This emerging material shows potential for future infrared optoelectronics and novel devices in which anisotropic properties are desirable.

Fe0.36(4)Pd0.64(4)Se2: Magnetic Spin-Glass Polymorph of FeSe2 and PdSe2 Stable at Ambient Pressure

We report the synthesis and characterization of Fe_0.36(4)Pd_0.64(4)Se₂ with a pyrite-type structure. Fe_0.36(4)Pd_0.64(4)Se₂ was synthesized using ambient pressure flux crystal growth methods even though the space group Pa3 is high-pressure polymorph for both FeSe₂ and PdSe₂. Combined experimental and theoretical analysis reveal magnetic spin glass state below 23 K in 1000 Oe that stems from random Fe/Pd occupancies on the same atomic site. The frozen-in magnetic randomness contributes significantly to electronic transport. Electronic structure calculations confirm dominant d-electron character of hybridized bands and large density of states near the Fermi level. Flux-grown single crystal alloys in Pd-Fe-Se atomic system therefore open new pathway for exploring different polymorphs in crystal structures and their novel properties.

Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability

A long-wavelength infrared photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal imaging, biomedical optics, and medical imaging. However, sub-bandgap light detection in graphene and black phosphorus has been a long-standing scientific challenge because of their low photoresponsivity, instability in the air, and high dark current. In this study, we report a highly sensitive, air-stable, and operable long-wavelength infrared photodetector at room temperature based on PdSe₂ phototransistors and their heterostructure. A high photoresponsivity of ∼42.1 AW^-1 (at 10.6 μm) was demonstrated, which is an order of magnitude higher than the current record of platinum diselenide. Moreover, the dark current and noise power density were suppressed effectively by fabricating a van der Waals heterostructure. This work fundamentally contributes to establishing long-wavelength infrared detection by PdSe₂ at the forefront of long-IR two-dimensional-materials-based photonics.

Physical Properties and Photovoltaic Application of Semiconducting Pd₂Se₃ Monolayer

Palladium selenides have attracted considerable attention because of their intriguing properties and wide applications. Motivated by the successful synthesis of Pd₂Se₃ monolayer (Lin et al., Phys. Rev. Lett., 2017, 119, 016101), here we systematically study its physical properties and device applications using state-of-the-art first principles calculations. We demonstrate that the Pd₂Se₃ monolayer has a desirable quasi-direct band gap (1.39 eV) for light absorption, a high electron mobility (140.4 cm²V^-1s^-1) and strong optical absorption (~10⁵ cm^-1) in the visible solar spectrum, showing a great potential for absorber material in ultrathin photovoltaic devices. Furthermore, its bandgap can be tuned by applying biaxial strain, changing from indirect to direct. Equally important, replacing Se with S results in a stable Pd₂S₃ monolayer that can form a type-II heterostructure with the Pd₂Se₃ monolayer by vertically stacking them together. The power conversion efficiency (PCE) of the heterostructure-based solar cell reaches 20%, higher than that of MoS₂/MoSe₂ solar cell. Our study would motivate experimental efforts in achieving Pd₂Se₃ monolayer-based heterostructures for new efficient photovoltaic devices.

Single-crystal structure of pyrite-type HP-Pd0.84(1)Se2 prepared by high-pressure/ high-temperature synthesis

At ambient conditions, PdSe2 dichalcogenides crystallize in the layered PdS2-type structure. If pressure is applied, the coordination number of palladium atoms increases and the three-dimensional pyrite-type structure with octahedral (PdSe6)4− coordination geometry is observed. For the first time, single crystals of a pyrite-type PdSe2 modification could be obtained and characterized, which were grown by multianvil high-pressure/high-temperature synthesis at 7.5 GPa and 1023 K. The crystals show the expected pyrite-type space group Pa3̅ (no. 205) and refinement results of a=613.26(3) pm, R1=0.0233, and wR2=0.0247 (all data) were received for HP-Pd0.84(1)Se2. The single-crystal data revealed significant defect formation on the palladium site with 16% vacancies, which is in line with the orthorhombic PdX 2-type high-pressure polymorphs HP-Pd0.94(1)S2 and HP-Pd0.88(1)Se2. The tendency of vacancy formation on the palladium site could also be verified by EDX measurements.

3D Imaging and Manipulation of Subsurface Selenium Vacancies in PdSe_{2}

Two-dimensional materials such as layered transition-metal dichalcogenides (TMDs) are ideal platforms for studying defect behaviors, an essential step towards defect engineering for novel material functions. Here, we image the 3D lattice locations of selenium-vacancy V_{Se} defects and manipulate them using a scanning tunneling microscope (STM) near the surface of PdSe_{2}, a recently discovered pentagonal layered TMD. The V_{Se} show a characterisitc charging ring in a spatially resolved conductance map, based on which we can determine its subsurface lattice location precisely. Using the STM tip, not only can we reversibly switch the defect states between charge neutral and charge negative, but also trigger migrations of V_{Se} defects. This allows a demonstration of direct "writing" and "erasing" of atomic defects and tracing the diffusion pathways. First-principles calculations reveal a small diffusion barrier of V_{Se} in PdSe_{2}, which is much lower than S vacancy in MoS_{2} or an O vacancy in TiO_{2}. This finding opens an opportunity of defect engineering in PdSe_{2} for such as controlled phase transformations and resistive-switching memory device application.

Few-Layer PdSe2 Sheets: Promising Thermoelectric Materials Driven by High Valley Convergence

Herein, we report a comprehensive study on the structural and electronic properties of bulk, monolayer, and multilayer PdSe2 sheets. First, we present a benchmark study on the structural properties of bulk PdSe2 by using 13 commonly used density functional theory (DFT) functionals. Unexpectedly, the most commonly used van der Waals (vdW)-correction methods, including DFT-D2, optB88, and vdW-DF2, fail to provide accurate predictions of lattice parameters compared to experimental data (relative error > 15%). On the other hand, the PBE-TS series functionals provide significantly improved prediction with a relative error of <2%. Unlike hexagonal two-dimensional materials like graphene, transition metal dichalcogenides, and h-BN, the conduction band minimum of monolayer PdSe2 is not located along the high symmetry lines in the first Brillouin zone; this highlights the importance of the structure-property relationship in the pentagonal lattice. Interestingly, high valley convergence is found in the conduction and valence bands in monolayer, bilayer, and trilayer PdSe2 sheets, suggesting promising application in thermoelectric cooling.

Monolayer PdSe2: A promising two-dimensional thermoelectric material

Motivated by the recent experimental synthesis of two-dimensional semiconducting film PdSe₂, we investigate the electronic and thermal transport properties of PdSe₂ monolayer by using the density functional theory and semiclassical Boltzmann transport equation. The calculated results reveal anisotropic transport properties. Low lattice thermal conductivity about 3 Wm⁻¹ K ⁻¹ (300K) along the x direction is obtained, and the dimensionless thermoelectric figure of merit can reach 1.1 along the x direction for p-type doping at room temperature, indicating the promising thermoelectric performance of monolayer PdSe₂.

Novel Pd_{2}Se_{3} Two-Dimensional Phase Driven by Interlayer Fusion in Layered PdSe_{2}

Two-dimensional (2D) materials are easily fabricated when their bulk form has a layered structure. The monolayer form in layered transition-metal dichalcogenides is typically the same as a single layer of the bulk material. However, PdSe_{2} presents a puzzle. Its monolayer form has been theoretically shown to be stable, but there have been no reports that monolayer PdSe_{2} has been fabricated. Here, combining atomic-scale imaging in a scanning transmission electron microscope and density functional theory, we demonstrate that the preferred monolayer form of this material amounts to a melding of two bulk monolayers accompanied by the emission of Se atoms so that the resulting stoichiometry is Pd_{2}Se_{3}. We further verify the interlayer melding mechanism by creating Se vacancies in situ in the layered PdSe_{2} matrix using electron irradiation. The discovery that strong interlayer interactions can be induced by defects and lead to the formation of new 2D materials opens a new venue for the exploration of defect engineering and novel 2D structures.

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics

Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe₂ ), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe₂ show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe₂ to exhibit electron-dominated transport with high mobility (µ_{e (max)} = 216 cm² V^-1 s^-1 ) and on/off ratio up to 10³ . Hole-dominated-transport PdSe₂ can be obtained by molecular doping using F₄ -TCNQ. This pioneer work on PdSe₂ will spark interests in the less explored regime of noble-TMDCs.

Strain-Modulated Electronic Structure and Infrared Light Adsorption in Palladium Diselenide Monolayer

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) exhibit intriguing properties for both fundamental research and potential application in fields ranging from electronic devices to catalysis. Based on first-principles calculations, we proposed a stable form of palladium diselenide (PdSe₂) monolayer that can be synthesized by selenizing Pd(111) surface. It has a moderate band gap of about 1.10 eV, a small in-plane stiffness, and electron mobility larger than that of monolayer black phosphorus by more than one order. Additionally, tensile strain can modulate the band gap of PdSe₂ monolayer and consequently enhance the infrared light adsorption ability. These interesting properties are quite promising for application in electronic and optoelectronic devices.