Atomic Interactions in the p-Type Clathrate I Ba8Au5.3Ge40.7

Lithium metal atoms fill vacancies in the germanium network of a type-I clathrate: synthesis and structural characterization of Ba8Li5Ge41

Clathrate phases with crystal structures exhibiting complex disorder have been the subject of many prior studies. Here we report syntheses, crystal and electronic structure, and chemical bonding analysis of a Li-substituted Ge-based clathrate phase with the refined chemical formula Ba8Li5.0(1)Ge41.0, which is a rare example of ternary clathrate-I where alkali metal atoms substitute framework Ge atoms. Two different synthesis methods to grow single crystals of the new clathrate phase are presented, in addition to the classical approach towards polycrystalline materials by combining pure elements in desired stoichiometric ratios. Structure elucidations for samples from different batches were carried out by single-crystal and powder X-ray diffraction methods. The ternary Ba8Li5.0(1)Ge41.0 phase crystallizes in the cubic type-I clathrate structure (space group Pm3̄n no. 223, a ≈ 10.80 Å), with the unit cell being substantially larger compared to the binary phase Ba8Ge43 (Ba8□3Ge43, a ≈ 10.63 Å). The expansion of the unit cell is the result of the Li atoms filling vacancies and substituting atoms in the Ge framework, with Li and Ge co-occupying one crystallographic (6c) site. As such, the Li atoms are situated in four-fold coordination environment surrounded by equidistant Ge atoms. Analysis of chemical bonding applying the electron density/electron localizability approach reveals ionic interaction of barium with the Li-Ge framework, while the lithium-germanium bonds are strongly polar covalent.

Advancing Thermoelectric Materials: A Comprehensive Review Exploring the Significance of One-Dimensional Nano Structuring

Amidst the global challenges posed by pollution, escalating energy expenses, and the imminent threat of global warming, the pursuit of sustainable energy solutions has become increasingly imperative. Thermoelectricity, a promising form of green energy, can harness waste heat and directly convert it into electricity. This technology has captivated attention for centuries due to its environmentally friendly characteristics, mechanical stability, versatility in size and substrate, and absence of moving components. Its applications span diverse domains, encompassing heat recovery, cooling, sensing, and operating at low and high temperatures. However, developing thermoelectric materials with high-performance efficiency faces obstacles such as high cost, toxicity, and reliance on rare-earth elements. To address these challenges, this comprehensive review encompasses pivotal aspects of thermoelectricity, including its historical context, fundamental operating principles, cutting-edge materials, and innovative strategies. In particular, the potential of one-dimensional nanostructuring is explored as a promising avenue for advancing thermoelectric technology. The concept of one-dimensional nanostructuring is extensively examined, encompassing various configurations and their impact on the thermoelectric properties of materials. The profound influence of one-dimensional nanostructuring on thermoelectric parameters is also thoroughly discussed. The review also provides a comprehensive overview of large-scale synthesis methods for one-dimensional thermoelectric materials, delving into the measurement of thermoelectric properties specific to such materials. Finally, the review concludes by outlining prospects and identifying potential directions for further advancements in the field.

Lone-Pair-Like Interaction and Bonding Inhomogeneity Induce Ultralow Lattice Thermal Conductivity in Filled β-Manganese-Type Phases

Finding a way to interlink heat transport with the crystal structure and order/disorder phenomena is crucial for designing materials with ultralow lattice thermal conductivity. Here, we revisit the crystal structure and explore the thermoelectric properties of several compounds from the family of the filled β-Mn-type phases M _2/n ⁿ⁺Ga₆Te₁₀ (M = Pb, Sn, Ca, Na, Na + Ag). The strongly disturbed thermal transport observed in the investigated materials originates from a three-dimensional Te-Ga network with lone-pair-like interactions, which results in large variations of the Ga-Te and M-Te interatomic distances and substantial anharmonic effects. In the particular case of NaAgGa₆Te₁₀, the additional presence of different cations leads to bonding inhomogeneity and strong structural disorder, resulting in a dramatically low lattice thermal conductivity (∼0.25 Wm^-1 K^-1 at 298 K), being the lowest among the reported β-Mn-type phases. This study offers a way to develop materials with ultralow lattice thermal conductivity by considering bonding inhomogeneity and lone-pair-like interactions.

Temperature-dependent crystal structure investigation of 4f hybridized thermoelectric clathrate Ba8-xCexAuySi46-y

Thermoelectric materials allow for conversion of waste heat into electrical energy, and they represent a green solution for improving our energy efficiency. Inclusion of 4f electrons near the Fermi level may boost the Seebeck coefficient, which is essential for high thermoelectric performance. In this study, Ce was successfully substituted for Ba on the guest atom sites in the type-I clathrate Ba_8-xCe_xAu_ySi_46-y and the material was characterized using high-resolution synchrotron powder X-ray diffraction data measured from 100 K to 1000 K to investigate potential structural implications of the inclusion of a 4f element. The thermal expansion and bonding of the host structure are not affected by the presence of Ce, as seen from the linear coefficient of unit-cell thermal expansion of 7.30 (8) × 10^-6 K^-1 and the average host Debye temperature of 404 (7) K determined from the multi-temperature atomic displacement parameters, both of which are similar to values obtained for pure Ba₈Au_ySi_46-y. The anisotropic atomic displacement parameters on the guest atom site in the large clathrate cage populated by Ba surprisingly reveals isotropic behavior, which is different from all other clathrates reported in literature, and thus represents a unique host-guest bonding situation.

Deformation and Failure Mechanisms of Thermoelectric Type-I Clathrate Ba8Au6Ge40

Type-I clathrate Ba₈Au₆Ge₄₀, possessing an interesting structure stacked by polyhedrons, is a potential "phonon-glass, electron-crystal" thermoelectric material. However, the mechanical properties of Ba₈Au₆Ge₄₀ vital for industrial applications have not been clarified. Here, we report the first density functional theory calculations of the intrinsic mechanical properties of thermoelectric clathrate Ba₈Au₆Ge₄₀. Among the different loading directions, the {110}/⟨001⟩ shearing and ⟨110⟩ tension are the weakest, with strengths of 4.51 and 6.64 GPa, respectively. Under {110}/⟨001⟩ shearing, the Ge-Ge bonds undergo significant stretching and twisting, leading to a severe distortion of the tetrakaidecahedral cage, giving rise to the fast softening of the flank Au-Ge bonds. At a strain of 0.2655, the Au-Ge bonds suddenly break, resulting in the collapse of the cage and the failure of the material. Under a ⟨110⟩ tension, the stretching of the Ge-Ge bonds keeps accelerating the softening of the Au-Ge bonds in the top/bottom hexagons, which releases the stress and disables the structure. The Au-Ge bonds are more rigid, contributing two-thirds of the structural deformation resistance. This work provides a new insight to understand the failure mechanisms of type-I clathrates with varied framework constitutions, which should help inform the design of robust thermoelectric clathrate materials.

Revealing uncommon transport in the previously unascertained very low cation clathrate-I Eu2Ga11Sn35

We report on the structure and electrical transport of single-crystal Eu2Ga11Sn35, the sole example of a very low cation concentration clathrate-I composition with atypical transport directly attributable to the structure and stoichiometry.

Valence fluctuations in the 3D + 3 modulated Yb3Co4Ge13 Remeika phase

Yb₃Co₄Ge₁₃ is the first example of a Remeika phase with a 3D + 3 [space group P4̄3n(α,0,0)000(0,α,0)000(0,0,α)000; a = 8.72328(1) Å, α = 0.4974(2)] modulated crystal structure. A slight shift of the composition towards higher Yb-content (i.e. Yb_3.2Co₄Ge_12.8) leads to the disappearance of the satellite reflections and stabilization of the disordered primitive cubic [space group Pm3̄n, a = 8.74072(2) Å] Remeika prototype structure. The stoichiometric structurally modulated germanide is a metal with hole-like charge carriers, where Yb-ions are in a temperature-dependent intermediate valence state varying from +2.60 to +2.66 for the temperature range 85-293 K. The valence fluctuations have been investigated by means of temperature dependent X-ray absorption spectroscopy, magnetic susceptibility and thermopower measurements.

The Intermetallic Semiconductor ht-IrGa3: a Material in the in-Transformation State

The compound IrGa₃ was synthesized by direct reaction of the elements. It is formed as a high-temperature phase in the Ir-Ga system. Single-crystal X-ray diffraction analysis confirms the tetragonal symmetry (space group P4₂ /mnm, No. 136) with a = 6.4623(1) Å and c = 6.5688(2) Å and reveals strong disorder in the crystal structure, reflected in the huge values and anisotropy of the atomic displacement parameters. A model for the real crystal structure of ht-IrGa₃ is derived by the split-position approach from the single-crystal X-ray diffraction data and confirmed by an atomic-resolution transmission electron microscopy study. Temperature-dependent electrical resistivity measurements evidence semiconductor behavior with a band gap of 30 meV. A thermoelectric characterization was performed for ht-IrGa₃ and for the solid solution IrGa_3-x Zn _x .

Crystal Structure and Physical Properties of the Cage Compound Hf2B2-2δIr5+δ

Hf₂B_2–2δIr_5+δ crystallizes with a new type of structure: space group Pbam, a = 5.6300(3) Å, b = 11.2599(5) Å, and c = 3.8328(2) Å. Nearly 5% of the boron pairs are randomly replaced by single iridium atoms (Ir_5+δB_2–2δ). From an analysis of the chemical bonding, the crystal structure can be understood as a three-dimensional framework stabilized by covalent two-atom B–B and Ir–Ir as well as three-atom Ir–Ir–B and Ir–Ir–Ir interactions. The hafnium atoms center 14-atom cavities and transfer a significant amount of charge to the polyanionic boron–iridium framework. This refractory boride displays moderate hardness and is a Pauli paramagnet with metallic electrical resistivity, Seebeck coefficient, and thermal conductivity. The metallic character of this system is also confirmed by electronic structure calculations revealing 5.8 states eV^–1 fu^–1 at the Fermi level. Zr₂B_2–2δIr_5+δ is found to be isotypic with Hf₂B_2–2δIr_5+δ, and both form a continuous solid solution.

Hf₂Ir_5+δB_2−2δ is a cage compound with a three-dimensional anionic boron−iridium framework composed of [B₂Ir₈] units with cavities bearing the hafnium cations. Zr₂Ir_5+δB_2−2δ is found to be isotypic with Hf₂Ir_5+δB_2−2δ, and both form a continuous solid solution.

Y4Be33Pt16- a non-centrosymmetric cage superconductor with multi-centre bonding in the framework

The new ternary compound Y₄Be₃₃Pt₁₆ was prepared from elements by arc melting, and its crystal structure was determined from single-crystal X-ray diffraction data (space group I4[combining macron]3d, a = 13.4849(3) Å). The material is the first representative of a new structure type of complex intermetallic compounds and reveals a cage-like crystal structure. Analysis of chemical bonding by means of the electron localizabilty approach indicates ionic interaction of yttrium with the rest of the crystal structure, characteristic for cage compounds, in particular for clathrates. In contrast to the mostly two-centre bonding in the framework of clathrates, the new compound is characterized by a multi-centre interaction within the framework, caused by the demand of the valence electrons in the system. The non-centrosymmetric material enters the superconducting state at T_C = 0.9 K.

The untypical high-pressure Zintl phase SrGe6

The binary strontium germanide SrGe6 was synthesized at high-pressure high-temperature conditions of approximately 10 GPa and typically 1400 K before quenching to ambient conditions. At ambient pressure, SrGe6 decomposes in a monotropic fashion at T = 680(10) K into SrGe2 and Ge, indicating its metastable character. Single-crystal X-ray diffraction data indicate that the compound SrGe6 adopts a new monoclinic structure type comprising a unique three-dimensional framework of germanium atoms with unusual cages hosting the strontium cations. Quantum chemical analysis of the chemical bonding shows that the framework consists of three- and four- bonded germanium atoms yielding the precise electron count Sr[(4bGe0]4[(3b)Ge−]2 in accordance with the 8 − N rule and the Zintl concept. Conflicting with that, a pseudo-gap in the electronic density of states appears clearly below the Fermi level, and elaborate bonding analysis reveals additional Sr–Ge interactions in the concave coordination polyhedron of the strontium atoms.

III-V Clathrate Semiconductors with Outstanding Hole Mobility: Cs8In27Sb19 and A8Ga27Sb19 (A = Cs, Rb)

Three novel unconventional clathrates with unprecedented III-V semiconducting frameworks have been synthesized: Cs₈In₂₇Sb₁₉, Cs₈Ga₂₇Sb₁₉, and Rb₈Ga₂₇Sb₁₉. These clathrates represent the first examples of tetrel-free clathrates that are completely composed of main group elements. All title compounds crystallize in an ordered superstructure of clathrate-I in the Ia3̅ space group (No. 206; Z = 8). In the clathrate framework, a full ordering of {Ga or In} and Sb is observed by a combination of high-resolution synchrotron single-crystal and powder X-ray diffraction techniques. Density functional theory (DFT) calculations show that all three clathrates are energetically stable with relaxed lattice constants matching the experimental data. Due to the complexity of the crystal structure composed of heavy elements, the reported clathrates exhibit ultralow thermal conductivities of less than 1 W·m^-1·K^-1 at room temperature. All compounds are predicted and experimentally confirmed to be narrow-bandgap p-type semiconductors with high Seebeck thermopower values, up to 250 μV·K^-1 at 300 K for Cs₈In₂₇Sb₁₉. The latter compound shows carrier concentrations and mobilities, 1.42 × 10¹⁵ cm^-3 and 880 cm² ·V^-1·s^-1, which are on par with the values for parent binary InSb, one of the best electronic semiconductors. The high hole carrier mobility is uncommon for complex bulk materials and a highly desirable trait, opening ways to design semiconducting materials based on tunable III-V clathrates.

Experimental and Computational Study of the Lithiation of Ba8Al yGe46- y Based Type I Germanium Clathrates

In this work, we investigate the electrochemical properties of Ba₈Al _yGe_{46- y} ( y = 0, 4, 8, 12, 16) clathrates prepared by arc-melting. These materials have cage-like structures with large cavity volumes and can also have vacancies on the Ge framework sites, features which may be used to accommodate Li. Herein, a structural, electrochemical, and theoretical investigation is performed to explore these materials as anodes in Li-ion batteries, including analysis of the effect of the Al content and framework vacancies on the observed electrochemical properties. Single-crystal X-ray diffraction (XRD) studies indicate the presence of vacancies at the 6c site of the clathrate framework as the Al content decreases, and the lithiation potentials and capacities are observed to decrease as the degree of Al substitution increases. From XRD, electrochemical, and transmission electron microscopy analysis, we find that all of the clathrate compositions undergo two-phase reactions to form Li-rich amorphous phases. This is different from the behavior observed in Si clathrate analogues, where there is no amorphous phase transition during electrochemical lithiation nor discernible changes to the lattice constant of the bulk structure. From density functional theory calculations, we find that Li insertion into the three framework vacancies in Ba₈Ge₄₃ is energetically favorable, with a calculated lithiation voltage of 0.77 V versus Li/Li⁺. However, the calculated energy barrier for Li diffusion between vacancies and around Ba guest atoms is at least 1.6 eV, which is too high for significant room-temperature diffusion. These results show that framework vacancies in the Ge clathrate structure are unlikely to significantly contribute to lithiation processes unless the Ba guest atoms are absent, but suggest that guest atom vacancies could open diffusion paths for Li, allowing for empty framework positions to be occupied.

Crystal Structure and Transport Properties of the Homologous Compounds (PbSe)5(Bi2Se3)3m (m = 2, 3)

We report on a detailed investigation of the crystal structure and transport properties in a broad temperature range (2-723 K) of the homologous compounds (PbSe)₅(Bi₂Se₃)_3m for m = 2, 3. Single-crystal X-ray diffraction data indicate that the m = 2, 3 compounds crystallize in the monoclinic space groups C2/m (No. 12) and P2₁/m (No. 11), respectively. In agreement with diffraction data, high-resolution transmission electron microscopy analyses carried out on single crystals show that the three-dimensional crystal structures are built from alternating Pb-Se and m Bi-Se layers stacked along the a axis in both compounds. Scanning electron microcopy and electron-probe microanalyses reveal deviations from the nominal stoichiometry, suggesting a domain of existence in the pseudo binary phase diagram at 873 K. The complex atomic-scale structures of these compounds lead to very low lattice thermal conductivities κ_L that approach the glassy limit at high temperatures. A comparison of the κ_L values across this series unveiled an unexpected increase with increasing m from m = 1 to m = 3, in contrast to the expectation that increasing the structural complexity should tend to lower the thermal transport. This result points to a decisive role played by the Pb-Se/Bi-Se interfaces in limiting κ_L in this series. Both compounds behave as heavily doped n-type semiconductors with relatively low electrical resistivity and thermopower values. As a result, moderate peak ZT values of 0.25 and 0.20 at 700 K were achieved in the m = 2, 3 compounds, respectively. The inherent poor ability of these structures to conduct heat suggests that these homologous compounds may show interesting thermoelectric properties when properly optimized by extrinsic dopants.

Direct measurement of individual phonon lifetimes in the clathrate compound Ba7.81Ge40.67Au5.33

Engineering lattice thermal conductivity requires to control the heat carried by atomic vibration waves, the phonons. The key parameter for quantifying it is the phonon lifetime, limiting the travelling distance, whose determination is however at the limits of instrumental capabilities. Here, we show the achievement of a direct quantitative measurement of phonon lifetimes in a single crystal of the clathrate Ba_7.81Ge_40.67Au_5.33, renowned for its puzzling ‘glass-like’ thermal conductivity. Surprisingly, thermal transport is dominated by acoustic phonons with long lifetimes, travelling over distances of 10 to 100 nm as their wave-vector goes from 0.3 to 0.1 Å⁻¹. Considering only low-energy acoustic phonons, and their observed lifetime, leads to a calculated thermal conductivity very close to the experimental one. Our results challenge the current picture of thermal transport in clathrates, underlining the inability of state-of-the-art simulations to reproduce the experimental data, thus representing a crucial experimental input for theoretical developments.

Phonon lifetime is a fundamental parameter of thermal transport however its determination is challenging. Using inelastic neutron scattering and the neutron resonant spin-echo technique, Lory et al. determine the acoustic phonon lifetime in a single crystal of clathrate Ba7.81Ge40.67Au5.33.

Controlling superstructural ordering in the clathrate-I Ba8M16P30 (M = Cu, Zn) through the formation of metal-metal bonds

Order-disorder-order phase transitions in the clathrate-I Ba8Cu16P30 were induced and controlled by aliovalent substitutions of Zn into the framework. Unaltered Ba8Cu16P30 crystallizes in an ordered orthorhombic (Pbcn) clathrate-I superstructure that maintains complete segregation of metal and phosphorus atoms over 23 different crystallographic positions in the clathrate framework. The driving force for the formation of this Pbcn superstructure is the avoidance of Cu-Cu bonds. This superstructure is preserved upon aliovalent substitution of Zn for Cu in Ba8Cu16-x Zn x P30 with 0 < x < 1.6 (10% Zn/Mtotal), but vanishes at greater substitution concentrations. Higher Zn concentrations (up to 35% Zn/Mtotal) resulted in the additional substitution of Zn for P in Ba8M16+y P30-y (M = Cu, Zn) with 0 ≤ y ≤ 1. This causes the formation of Cu-Zn bonds in the framework, leading to a collapse of the orthorhombic superstructure into the more common cubic subcell of clathrate-I (Pm3n). In the resulting cubic phases, each clathrate framework position is jointly occupied by three different elements: Cu, Zn, and P. Detailed structural characterization of the Ba-Cu-Zn-P clathrates-I via single crystal X-ray diffraction, joint synchrotron X-ray and neutron powder diffractions, pair distribution function analysis, electron diffraction and high-resolution electron microscopy, along with elemental analysis, indicates that local ordering is present in the cubic clathrate framework, suggesting the evolution of Cu-Zn bonds. For the compounds with the highest Zn content, a disorder-order transformation is detected due to the formation of another superstructure with trigonal symmetry and Cu-Zn bonds in the clathrate-I framework. It is shown that small changes in the composition, synthesis, and crystal structure have significant impacts on the structural and transport properties of Zn-substituted Ba8Cu16P30.

A type-II clathrate with a Li-Ge framework

Na

Type-I silicon clathrates containing lithium

The intermetallic phase [Li

Mechanism of Rare Earth Incorporation and Crystal Growth of Rare Earth Containing Type-I Clathrates

Type-I clathrates possess extremely low thermal conductivities, a property that makes them promising materials for thermoelectric applications. The incorporation of cerium into one such clathrate has recently been shown to lead to a drastic enhancement of the thermopower, another property determining the thermoelectric efficiency. Here we explore the mechanism of the incorporation of rare earth elements into type-I clathrates. Our investigation of the crystal growth and the composition of the phase Ba_8-x RE _x TM _y Si_46-y (RE = rare earth element; TM = Au, Pd, Pt) reveals that the RE content x is mainly governed by two factors, the free cage space and the electron balance.

New clathrates of Rb7.50(1)Tl0.50(1)Ge46and K7.62(1)Tl0.38(1)Ge45.34(3)

Rb_7.50(1)Tl_0.50(1)Ge₄₆and K_7.62(1)Tl_0.38(1)Ge_45.34(3)are synthesized and characterized.

Electronic band structure and low-temperature transport properties of the type-I clathrate Ba8Ni(x)Ge(46-x-y□y)

We present the evolution of the low-temperature thermodynamic, galvanomagnetic and thermoelectric properties of the type-I clathrate Ba8Ni(x)Ge(46-x-y□y) with the Ni concentration studied on polycrystalline samples with 0.0 ≤ x ≤ 6.0 by means of specific heat, Hall effect, electrical resistivity, thermopower and thermal conductivity measurements in the 2-350 K temperature range and supported by first-principles calculations. The experimental results evidence a 2a × 2a × 2a supercell described in the space group Ia3d for x ≤ 1.0 and a primitive unit cell a × a × a (space group Pm3n) above this Ni content. This concentration also marks the limit between a regime where both electrons and holes contribute to the electrical conduction (x ≤ 1.0) and a conventional, single-carrier regime (x > 1.0). This evolution is traced by the variations in the thermopower and Hall effect with x. In agreement with band structure calculations, increasing the Ni content drives the system from a nearly-compensated semimetallic state (x = 0.0) towards a narrow-band-gap semiconducting state (x = 4.0). A crossover from an n-type to a p-type conduction occurs when crossing the x = 4.0 concentration i.e. for x = 4.1. The solid solution Ba8Ni(x)Ge(46-x-y□y) therefore provides an excellent experimental platform to probe the evolution of the peculiar properties of the parent type-I clathrate Ba8Ge43□3 upon Ge/Ni substitution and filling up of the vacancies, which might be universal among the ternary systems at low substitution levels.

Structure and properties of type-II clathrate Cs8Na16−xTlxGe136

The type-II clathrate of Cs₈Na_16−xTl_xGe₁₃₆was synthesized.

Type-I clathrates of K7.69(2)Cu2.94(6)Ge43.06(6)and Rb8Ag2.79(4)Ge43.21(4)

Type-I clathrates of K_7.69(2)Cu_2.94(6)Ge_43.06(6)and Rb₈Ag_2.79(4)Ge_43.21(4)are successfully synthesized.

High temperature thermoelectric properties of the type-I clathrate Ba8NixGe46-x-y□y

Polycrystalline samples of the type-I clathrate Ba(8)Ni(x)Ge(46-x-y)□(y) were synthesized for 0.2 ⩽ x ⩽ 3.5 by melt quenching and for 3.5<x ⩽ 6.0 by melting with subsequent annealing at 700 °C. The maximum Ni content in the clathrate framework at this temperature was found to be x ≈ 4.2 atoms per unit cell. Thermoelectric and thermodynamic properties of the type-I clathrate were investigated from 300 to 700 K by means of electrical resistivity, thermopower, thermal conductivity and specific heat measurements. As the Ni content increases, the electronic properties gradually evolve from a metallic character (x < 3.5) towards a highly doped semiconducting state (x ⩾ 3.5). Below x ≈ 4.0 transport is dominated by electrons, while further addition of Ni (x ≈ 4.2) switches the electrical conduction to p-type. Maximum value of the dimensionless thermoelectric figure of merit ZT ≈ 0.2 was achieved at 500 K and 650 K for x ≈ 2.0 and x ≈ 3.8, respectively.

Probing the Zintl-Klemm concept: a combined experimental and theoretical charge density study of the Zintl phase CaSi

The nature of the chemical bonds in CaSi, a textbook example of a Zintl phase, was investigated for the first time by means of a combined experimental and theoretical charge density analysis to test the validity of the Zintl-Klemm concept. The presence of covalent Si-Si interactions, which were shown by QTAIM analysis, supports this fundamental bonding concept. However, the use of an experimental charge density study and theoretical band structure analyses give clear evidence that the cation-anion interaction cannot be described as purely ionic, but also has partially covalent character. Integrated QTAIM atomic charges of the atoms contradict the original Zintl-Klemm concept and deliver a possible explanation for the unexpected metallic behavior of CaSi.

Clathrate Ba8Au16P30: the "gold standard" for lattice thermal conductivity

A novel clathrate phase, Ba8Au16P30, was synthesized from its elements. High-resolution powder X-ray diffraction and transmission electron microscopy were used to establish the crystal structure of the new compound. Ba8Au16P30 crystallizes in an orthorhombic superstructure of clathrate-I featuring a complete separation of gold and phosphorus atoms over different crystallographic positions, similar to the Cu-containing analogue, Ba8Cu16P30. Barium cations are trapped inside the large polyhedral cages of the gold-phosphorus tetrahedral framework. X-ray diffraction indicated that one out of 15 crystallographically independent phosphorus atoms appears to be three-coordinate. Probing the local structure and chemical bonding of phosphorus atoms with (31)P solid-state NMR spectroscopy confirmed the three-coordinate nature of one of the phosphorus atomic positions. High-resolution high-angle annular dark-field scanning transmission electron microscopy indicated that the clathrate Ba8Au16P30 is well-ordered on the atomic scale, although numerous twinning and intergrowth defects as well as antiphase boundaries were detected. The presence of such defects results in the pseudo-body-centered-cubic diffraction patterns observed in single-crystal X-ray diffraction experiments. NMR and resistivity characterization of Ba8Au16P30 indicated paramagnetic metallic properties with a room-temperature resistivity of 1.7 mΩ cm. Ba8Au16P30 exhibits a low total thermal conductivity (0.62 W m(-1) K(-1)) and an unprecedentedly low lattice thermal conductivity (0.18 W m(-1) K(-1)) at room temperature. The values of the thermal conductivity for Ba8Au16P30 are significantly lower than the typical values reported for solid crystalline compounds. We attribute such low thermal conductivity values to the presence of a large number of heavy atoms (Au) in the framework and the formation of multiple twinning interfaces and antiphase defects, which are effective scatterers of heat-carrying phonons.

Synthesis, structure, and properties of two Zintl phases around the composition SrLiAs

Two atomic arrangements were found near the equiatomic composition in the strontium-lithium-arsenic system. Orthorhombic o-SrLiAs was synthesized by reaction of elemental components at 950 °C, followed by annealing at 800 °C and subsequent quenching in water. The hexagonal modification h-SrLi(1-x)As was obtained from annealing of o-SrLiAs at 550 °C in dynamic vacuum. The structures of both phases were determined by single-crystal X-ray diffraction: o-SrLiAs, structure type TiNiSi, space group Pnma, Pearson symbol oP12, a = 7.6458(2) Å, b = 4.5158(1) Å, c = 8.0403(3) Å, V = 277.61(2) Å(3), R(F) = 0.028 for 558 reflections; h-SrLi(1-x)As, structure type ZrBeSi, space group P6(3)/mmc, Pearson symbol hP6, a = 4.49277(9) Å, c = 8.0970(3) Å, V = 141.54(1) Å(3), RF = 0.026 for 113 reflections. The analysis of the electron density within the framework of the quantum theory of atoms in molecules revealed a charge transfer according to the Sr(1.3+)Li(0.8+)As(2.1-), in agreement with the electronegativities of the individual elements. The electron localizability indicator distribution indicated the formation of a 3D anionic framework [LiAs] in o-SrLiAs and a rather 2D anionic framework [LiAs] in h-SrLi(1-x)As. Magnetic susceptibility measurements point to a diamagnetic character of both phases, which verifies the calculated electronic density of states.