Group 13 β-Ketoiminate Compounds: Gallium Hydride Derivatives As Molecular Precursors to Thin Films of Ga2O3

Tris(β-ketoiminate) Aluminium(III) Compounds as Aluminium Oxide Precursors

Precursor design is the crucial step in tailoring the deposition profile towards a multitude of functional materials. Most commercially available aluminium oxide precursors require high processing temperatures (>500 °C). Herein, we report the tuning of the decomposition profile (200-350 °C) of a range of octahedrally coordinated tris(β-ketoiminate) aluminium complexes of the type [Al(MeCN(R)CHC=OMe)₃ ], by varying the R substituents in the ligands. The complexes are derived from the reaction of trimethylamine alane (TMAA) and a series of N-substituted β-ketoiminate ligands (R-acnacH, R=Me, Et, ⁱ Pr, Ph) with varying R-substituents sizes. When the more sterically encumbered ligand (R=Mes) was used, the Al atom became five-coordinate, therefore representing the threshold to octahedral coordination around the metal in these type of compounds, which, consequently, lead to a change of decomposition profile. The resulting compounds have been characterised by NMR spectroscopy, mass spectrometry, elemental analysis and single crystal X-ray diffraction. [Al(MeCN(Me)CHC=OMe)₃ ] has been used as a single source precursor for the deposition of Al₂ O₃ . Thin films were deposited via aerosol assisted chemical vapour deposition (AACVD), with toluene as the solvent, and were analysed using SEM, EDX and XPS.

Investigations into the structure, reactivity, and AACVD of aluminium and gallium amidoenoate complexes

Amidoenoate (AME = {ethyl-3-(R-amido)but-2-enoate}) complexes of aluminium and gallium, of the type: [AlCl₂(AME^R)] R = iPr (1-Al); [AlCl(AME^R)₂] R = iPr (2-Al), Dip (3-Al); [GaCl₂(AME^R)] R = iPr (1-Ga) and [GaCl(AME^R)₂] R = iPr (2-Ga), Dip (3-Ga), have been synthesised (iPr = isopropyl, Dip = 2,6-diisopropylphenyl). The coordination chemistry of these complexes has been studied in relation to precursor suitability. Investigations into the reactivity of the aluminium and gallium amidoenoate complexes involved reactions with hydride sources including alkali metal hydride salts, alkylsilanes, and magnesium hydride species and magnesium(I) dimers. The isolation of alkyl metal amidoenoate precursors including an aluminium hydride amidoenoate, [AlH(AME^Dip)₂] (4-Al) and dimethyl gallium amidoenoates [GaMe₂(AME^Dip)] (4-Ga), [GaMe₂(AME^iPr)] (5-Ga) concluded the synthetic studies. A selection of the isolated complexes were used as precursors for aerosol assisted chemical vapour deposition (AACVD) at 500 °C. Thin films of either amorphous Al₂O₃ or Ga₂O₃ were deposited and subsequently annealed at 1000 °C to improve the materials' crystallinity. The films were characterised by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-visible (UV-vis) spectroscopy and energy dispersive X-ray analysis (EDXA).

Molecular Main Group Metal Hydrides

This review serves to document advances in the synthesis, versatile bonding, and reactivity of molecular main group metal hydrides within Groups 1, 2, and 12-16. Particular attention will be given to the emerging use of said hydrides in the rapidly expanding field of Main Group element-mediated catalysis. While this review is comprehensive in nature, focus will be given to research appearing in the open literature since 2001.

Structural and Dynamic Properties of Gallium Alkoxides

A comparison of chlorido-gallium functionalized alkoxides as precursors for aerosol-assisted chemical vapor deposition (AACVD) was carried out. Variable-temperature (VT)-NMR studies were used to probe the fluxional behavior of these alkoxides in solution, and hence their utility as precursors. The synthesis involved the initial isolation of the dimer [GaCl(NMe₂)₂]₂ via a salt metathesis route from GaCl₃ and 2 equiv of LiNMe₂. This dimer was then reacted with 4 equiv of HOCH₂CH₂CH₂NEt₂, resulting in the formation of Ga[μ-(OCH₂CH₂CH₂NEt₂)₂GaCl₂]₃ (1). Mass spectrometry and VT-NMR confirmed the oligomeric structure of 1. Tuning of the ligand properties, namely, the chain length and substituents on N, resulted in formation of the monomers [GaCl(OR)₂] (R = CH₂CH₂NEt₂, (2); CH₂CH₂CH₂NMe₂, (3)). VT-NMR studies, supported by density functional theory calculations, confirmed that the ligands in both 2 and 3 possess a hemilabile coordination to the gallium center, owing to either a shorter carbon backbone (2) or less steric hindrance (3). Both 2 and 3 were selected for use as precursors for AACVD: deposition at 450 °C gave thin films of amorphous Ga₂O₃, which were subsequently annealed at 1000 °C to afford crystalline Ga₂O₃ material. The films were fully characterized by X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, UV-visible spectroscopy, and energy dispersive X-ray analysis.

Molecular engineering of Ga-ketoiminates: synthesis, structure and evaluation as precursors for the additive-free spin-coated deposition of gallium oxide thin films

New gallium ketoiminate precursors with high solubility, favourable hydrolysis and decomposition route enabling additive free processing of Ga₂O₃ thin films.

Solution based CVD of main group materials

This critical review focuses on the solution based chemical vapour deposition (CVD) of main group materials with particular emphasis on their current and potential applications. Deposition of thin films of main group materials, such as metal oxides, sulfides and arsenides, have been researched owing to the array of applications which utilise them including solar cells, transparent conducting oxides (TCOs) and window coatings. Solution based CVD processes, such as aerosol-assisted (AA)CVD have been developed due to their scalability and to overcome the requirement of suitably volatile precursors as the technique relies on the solubility rather than volatility of precursors which vastly extends the range of potentially applicable compounds. An introduction into the applications and precursor requirements of main group materials will be presented first followed by a detailed discussion of their deposition reviewed according to this application. The challenges and prospects for further enabling research in terms of emerging main group materials will be discussed.

Synthesis and characterisation of novel aluminium and gallium precursors for chemical vapour deposition

Synthesis of novel β-ketoiminate compounds (aluminium and gallium) which have been used for the first time as precursors in (AACVD).

Synthesis and Structural characterization of β-ketoiminate-stabilized gallium hydrides for chemical vapor deposition applications

Bis-β-ketoimine ligands of the form [(CH2 )n {N(H)C(Me)CHC(Me)O}2 ] (L(n) H2 , n=2, 3 and 4) were employed in the formation of a range of gallium complexes [Ga(L(n) )X] (X=Cl, Me, H), which were characterised by NMR spectroscopy, mass spectrometry and single-crystal X-ray diffraction analysis. The β-ketoimine ligands have also been used for the stabilisation of rare gallium hydride species [Ga(L(n) )H] (n=2 (7); n=3 (8)), which have been structurally characterised for the first time, confirming the formation of five-coordinate, monomeric species. The stability of these hydrides has been probed through thermal analysis, revealing stability at temperatures in excess of 200 °C. The efficacy of all the gallium β-ketoiminate complexes as molecular precursors for the deposition of gallium oxide thin films by chemical vapour deposition (CVD) has been investigated through thermogravimetric analysis and deposition studies, with the best results being found for a bimetallic gallium methyl complex [L(3) {GaMe2 }2 ] (5) and the hydride [Ga(L(3) )H] (8). The resulting films (F5 and F8, respectively) were amorphous as-deposited and thus were characterised primarily by XPS, EDXA and SEM techniques, which showed the formation of stoichiometric (F5) and oxygen-deficient (F8) Ga2 O3 thin films.

Antimicrobial activity of copper and copper(i) oxide thin films deposited via aerosol-assisted CVD

High antimicrobial efficacy of Cu and Cu₂O films, deposited via aerosol-assisted chemical vapour deposition, was observed against E. coli and S. aureus.

Aerosol-assisted delivery of precursors for chemical vapour deposition: expanding the scope of CVD for materials fabrication

The production of thin films of materials has become the attention of a great deal of research throughout academia and industry worldwide owing to the array of applications which utilise them, including electronic devices, gas sensors, solar cells, window coatings and catalytic systems. Whilst a number of deposition techniques are in common use, chemical vapour deposition (CVD) is an attractive process for the production of a wide range of materials due to the control it offers over film composition, coverage and uniformity, even on large scales. Conventional CVD processes can be limited, however, by the need for suitably volatile precursors. Aerosol-assisted (AA)CVD is a solution-based process which relies on the solubility of the precursor, rather than its volatility and thus vastly extends the range of potentially applicable precursors. In addition, AACVD offers extra means to control film morphology and concurrently the properties of the deposited materials. In this perspective we discuss the AACVD process, the influence of deposition conditions on film characteristics and a number of materials and applications to which AACVD has been found beneficial.