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Xing W, Wang N, Li Z, Liu W, Tang J, Yin W, Lin Z, Kang B, Yao J. New quaternary chalcogenide Ba4HgAs2S10 originating from the combination of linear [HgS2]2− and tetrahedral [AsS4]3− modules. Dalton Trans 2020; 49:13060-13065. [DOI: 10.1039/d0dt02781b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A new quaternary chalcogenide Ba4HgAs2S10 is constructed by combining linear HgS22− and tetrahedral AsS43− modules.
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Affiliation(s)
- Wenhao Xing
- Beijing Center for Crystal Research and Development
- Key Lab of Functional Crystals and Laser Technology
- Technical Institute of Physics and Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Naizheng Wang
- Beijing Center for Crystal Research and Development
- Key Lab of Functional Crystals and Laser Technology
- Technical Institute of Physics and Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Zhuang Li
- Beijing Center for Crystal Research and Development
- Key Lab of Functional Crystals and Laser Technology
- Technical Institute of Physics and Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Wenhao Liu
- Beijing Center for Crystal Research and Development
- Key Lab of Functional Crystals and Laser Technology
- Technical Institute of Physics and Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Jian Tang
- Institute of Chemical Materials
- China Academy of Engineering Physics
- Mianyang 621900
- People's Republic of China
- Key Laboratory of Science and Technology on High Energy Laser
| | - Wenlong Yin
- Institute of Chemical Materials
- China Academy of Engineering Physics
- Mianyang 621900
- People's Republic of China
- Key Laboratory of Science and Technology on High Energy Laser
| | - Zheshuai Lin
- Beijing Center for Crystal Research and Development
- Key Lab of Functional Crystals and Laser Technology
- Technical Institute of Physics and Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Bin Kang
- Institute of Chemical Materials
- China Academy of Engineering Physics
- Mianyang 621900
- People's Republic of China
- Key Laboratory of Science and Technology on High Energy Laser
| | - Jiyong Yao
- Beijing Center for Crystal Research and Development
- Key Lab of Functional Crystals and Laser Technology
- Technical Institute of Physics and Chemistry
- Chinese Academy of Sciences
- Beijing 100190
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Jiang J, Mei D, Gong P, Lin Z, Zhong J, Wu Y. Wide band gap design of new chalcogenide compounds: KSrPS4 and CsBaAsS4. RSC Adv 2017. [DOI: 10.1039/c7ra01142c] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
KSrPS4 and CsBaAsS4 were successfully synthesized. The results of diffuse reflectance measurements revealed that KSrPS4 and CsBaAsS4 possess wide band gaps, which are larger than 3.62 eV and 2.86 eV, respectively.
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Affiliation(s)
- Jianqiao Jiang
- College of Chemistry and Chemical Engineering
- Shanghai University of Engineering Science
- Shanghai 201620
- P. R. China
| | - Dajiang Mei
- College of Chemistry and Chemical Engineering
- Shanghai University of Engineering Science
- Shanghai 201620
- P. R. China
| | - Pifu Gong
- Center for Crystal Research and Development
- Key Laboratory of Functional Crystals and Laser Technology
- Chinese Academy of Sciences
- Beijing 100190
- P. R. China
| | - Zheshuai Lin
- Center for Crystal Research and Development
- Key Laboratory of Functional Crystals and Laser Technology
- Chinese Academy of Sciences
- Beijing 100190
- P. R. China
| | - Junbo Zhong
- Key Laboratory of Green Catalysis of Higher Education Institutes of Sichuan
- College of Chemistry and Environmental Engineering
- Sichuan University of Science and Engineering
- Zigong 643000
- P. R. China
| | - Yuandong Wu
- College of Chemistry and Chemical Engineering
- Shanghai University of Engineering Science
- Shanghai 201620
- P. R. China
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Yan D, Liu C, Chai W, Zheng X, Zhang L, Zhi M, Zhou C, Zhang Q, Liu Y. Facile Hydrazine-Hydrothermal Syntheses and Characterizations of Two Quaternary Thioarsenates(III): Two-Dimensional SrAg4 As2 S6 ⋅2 H2 O and One-Dimensional BaAgAsS3. Chem Asian J 2016; 11:1842-8. [PMID: 27123892 DOI: 10.1002/asia.201600381] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2016] [Indexed: 11/12/2022]
Abstract
Two new quaternary thioarsenates(III), SrAg4 As2 S6 ⋅2 H2 O (1) and BaAgAsS3 (2), have been prepared through a hydrazine-hydrothermal method at low temperature. Compound 1 possesses a two-dimensional (2D) layer network, while compound 2 features a one-dimensional (1D) column structure. The detailed structure analysis indicates that Sr(2+) and Ba(2+) cations have different directing effects on the structures of thioarsenates(III). Both experimental and theoretical studies demonstrate that compounds 1 and 2 are narrow-gap semiconductors. Our success in synthesizing these two quaternary thioarsenates(III) proves that the hydrazine-hydrothermal technique is a powerful yet facile synthetic method for exploring new complex chalcogenides with diverse crystal structures and interesting physical properties.
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Affiliation(s)
- Dongming Yan
- School of Civil and Architectural Engineering, Zhejiang University, Hangzhou, 310058, China
| | - Chang Liu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Wenxiang Chai
- College of Materials Science and Engineering, China Jiliang University, Hangzhou, 310018, China
| | - Xuerong Zheng
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Luodong Zhang
- School of Civil and Architectural Engineering, Zhejiang University, Hangzhou, 310058, China
| | - Mingjia Zhi
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Chunmei Zhou
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Qichun Zhang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore. .,Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
| | - Yi Liu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
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Syntheses, structural variants and characterization of AInM′S4 (A=alkali metals, Tl; M′ = Ge, Sn) compounds; facile ion-exchange reactions of layered NaInSnS4 and KInSnS4 compounds. J SOLID STATE CHEM 2016. [DOI: 10.1016/j.jssc.2016.03.045] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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