Superionic adjustment leading to weakly temperature-dependent ZT values in bulk thermoelectrics

Silver Copper Chalcogenide Thermoelectrics: Advance, Controversy, and Perspective

Thermoelectric technology, which enables a direct and pollution-free conversion of heat into electricity, provides a promising path to address the current global energy crisis. Among the broad range of thermoelectric materials, silver copper chalcogenides (AgCuQ, Q = S, Se, Te) have garnered significant attention in thermoelectric community in light of inherently ultralow lattice thermal conductivity, controllable electronic transport properties, excellent thermoelectric performance across various temperature ranges, and a degree of ductility. This review epitomizes the recent progress in AgCuQ-based thermoelectric materials, from the optimization of thermoelectric performance to the rational design of devices, encompassing the fundamental understanding of crystal structures, electronic band structures, mechanical properties, and quasi-liquid behaviors. The correlation between chemical composition, mechanical properties, and thermoelectric performance in this material system is also highlighted. Finally, several key issues and prospects are proposed for further optimizing AgCuQ-based thermoelectric materials.

Dual-Cation CuAgSe-Based Material: Rapid Mass Transfer in Synthesis and High Thermoelectric Performance Realization

Understanding mass transfer mechanisms is vital for developing new material synthesis and densification technologies. Ion transport, serving both mass and charge transfer, is essential for the rapid preparation of high-performance fast ionic conductor thermoelectric materials like Zn4Sb3 and Cu2Q (Q = S, Se). In the case of dual-cation fast ion conductor materials like CuAgSe, exploring the relationship between cation transport becomes pertinent. In this study, copper (Cu) and selenium (Se) undergo a reaction in the presence of an electric field (∼15 A), resulting in the formation of the CuSe compound. Subsequent to this initial reaction, a subsequent thermal environment facilitates the interaction among Cu, CuSe, and Ag2Se, culminating in the rapid formation and densification of CuAgSe (with a relative density exceeding 99%) in just 30 s. Evidently, the diffusion of copper ions substantiates a pivotal role in facilitating mass transfer. As a result, CuAg1+xSe samples with different silver contents (x = 0.01, 0.02, 0.03, 0.04 and 0.05) can effectively inhibit cation vacancy, and introduce highly ordered Ag nanotwins to enhance the electrical transport performance. For CuAg1.04Se, a peak ZT value of 1.0 can be achieved at 673 K, which is comparable to the literatures. This work will guide the future electric field-assisted rapid mass transfer of materials.

Balanced High Thermoelectric Performance in n-Type and p-Type CuAgSe Realized through Vacancy Manipulation

As a liquid-like material, CuAgSe has high carrier mobility and ultralow lattice thermal conductivity. It undergoes an n-p conduction-type transition during β- to α-phase transition with increasing temperature. Moreover, optimization of the thermoelectric performance of CuAgSe is rather difficult, owing to the two-carrier conduction in this material. In this work, we reported the free tuning of the conduction type and thermoelectric performance of CuAgSe by manipulating the cation vacancies. Positron annihilation measurements reveal that the increase in CuAg content can effectively suppress the cation vacancies and reduce the hole carrier concentration, resulting in n-type conduction at high temperatures. Doping with Zn at the Cu sublattice in the CuAg-excessive CuAgSe can further decrease the number of vacancies, leading to a significant decrease in hole carrier concentration. Furthermore, the reduction of vacancies leads to weakening of carrier scattering. As a result, carrier mobility is also enhanced, thus improving the thermoelectric performance of n-type CuAgSe. On the other hand, high-performance p-type CuAgSe can be achieved by decreasing the CuAg content to introduce more cation vacancies. Ultimately, both n-type and p-type CuAgSe with superb thermoelectric performance are obtained, with a zTmax of 0.84 in Cu1.01Ag1.02Zn0.01Se (n-type) and 1.05 in (CuAg)0.96Se (p-type) at 600 K and average zT of 0.77 and 0.94 between 470 and 630 K for n-type and p-type, respectively.

Ag2 Q-Based (Q = S, Se, Te) Silver Chalcogenide Thermoelectric Materials

Thermoelectric technology provides a promising solution to sustainable energy utilization and scalable power supply. Recently, Ag₂ Q-based (Q = S, Se, Te) silver chalcogenides have come forth as potential thermoelectric materials that are endowed with complex crystal structures, high carrier mobility coupled with low lattice thermal conductivity, and even exceptional plasticity. This review presents the latest advances in this material family, from binary compounds to ternary and quaternary alloys, covering the understanding of multi-scale structures and peculiar properties, the optimization of thermoelectric performance, and the rational design of new materials. The "composition-phase structure-thermoelectric/mechanical properties" correlation is emphasized. Flexible and hetero-shaped thermoelectric prototypes based on Ag₂ Q materials are also demonstrated. Several key problems and challenges are put forward concerning further understanding and optimization of Ag₂ Q-based thermoelectric chalcogenides.

Metal phosphide CuP2 as a promising thermoelectric material: an insight from a first-principles study

We performed first-principles investigation of anharmonic lattice dynamics and thermal transport properties of CuP2, revealing its promising thermoelectric performance.

Enhanced thermoelectric performance in ternary spinel Cu4Mn2Te4via the synergistic effect of tellurium deficiency and chlorine doping

The chemistry of copper-based chalcogenides has received considerable attention due to their diverse structures and potential applications in the area of thermoelectric (TE) materials. In this communication, a series of spinel-type Cu₄Mn₂Te₄-based samples have been successfully prepared and their high TE performances are attributed to the enhanced power factor and low thermal conductivity via the synergistic effect of Te deficiency and Cl doping. Consequently, a maximum TE figure of merit (ZT) of ∼0.4 was achieved for the Cu₄Mn₂Te_3.93Cl_0.03 sample at 700 K, which was about 100% enhanced in comparison with the undoped Cu₄Mn₂Te₄ sample and one of the highest ZT values reported for p-type spinel tellurides.