Carboxylic acid chemistry at the Ge(100)-2 x 1 interface: bidentate bridging structure formation on a semiconductor surface

Influence of rapid heat treatment on the photocatalytic activity and stability of calcium titanates against a broad range of pollutants

Calcium titanate (CTO) photocatalysts were synthesized using a sol-gel method by adopting a cost-efficient, rapid calcination technique. The CTOs were characterized by X-ray diffractometry, X-ray photoelectron spectroscopy, infrared spectroscopy, nitrogen adsorption, porosimetry measurements, scanning/transmission electron microscopy, and diffuse reflectance spectroscopy. Their photocatalytic activity was assessed through the photocatalytic degradation of phenol, oxalic acid, and chlorophenol under UV light exposure, using a commercial CTO as a reference. The stability of the samples was evaluated using compounds with -OH, -COOH, and -Cl functional groups. Characterization results showed that CTO composites containing anatase, rutile, and brookite titania were obtained. Increasing the calcination temperature led to various crystalline compositions, higher crystallinity, larger primary crystallite sizes, and smaller specific surface areas. The photocatalytic activity of all CTO/TiO2 composites was superior compared to the commercial CTO we used as a reference. The high photocatalytic activity of the best-performing composites was attributed to their higher specific surface areas and the synergistic effect between the crystal phases. A cost comparison was also made between our unique calcination technique and conventional calcination, and it was found that our method is approximately 35% more cost-effective, while retaining the photocatalytic activity.

Vapor-Phase Passivation of Chlorine-Terminated Ge(100) Using Self-Assembled Monolayers of Hexanethiol

Continued scaling of electronic devices shows the need to incorporate high mobility alternatives to silicon, the cornerstone of the semiconductor industry, into modern field effect transistor (FET) devices. Germanium is well-poised to serve as the channel material in FET devices as it boasts an electron and hole mobility more than twice and four times that of Si, respectively. However, its unstable native oxide makes its passivation a crucial step toward its potential integration into future FETs. The International Roadmap for Devices and Systems (IRDS) predicts continued aggressive scaling not only of the device size but also of the pitch in nanowire arrays. The development of a vapor-phase chemical passivation technique will be required to prevent the collapse of these structures that can occur because of the surface tension and capillary forces that are experienced when tight-pitched nanowire arrays are processed via liquid-phase chemistry. Reported here is a vapor-phase process using hexanethiol for the passivation of planar Ge(100) substrates. Results benchmarking it against its well-established liquid-phase equivalent are also presented. X-ray photoelectron spectroscopy was used to monitor the effectiveness of the developed vapor-phase protocol, where the presence of oxide was monitored at 0, 24, and 168 h. Water contact angle measurements compliment these results by demonstrating an increase in hydrophobicity of the passivated substrates. Atomic force microscopy monitored the surface topology before and after processing to ensure the process does not cause roughening of the surface, which is critical to demonstrate suitability for nanostructures. It is shown that the 200 min vapor-phase passivation procedure generates stable, passivated surfaces with less roughness than the liquid-phase counterpart.

Work Function Control of Germanium through Carborane-Carboxylic Acid Surface Passivation

Self-assembled monolayers (SAMs) of carborane isomers with different dipole moments passivate germanium to modulate surface work function while maintaining chemical environment and surface energy. To identify head groups capable of monolayer formation on germanium surfaces, we studied thiol-, hydroxyl-, and carboxyl-terminated carboranes. These films were successfully formed with carboxylic acid head groups instead of the archetypal thiol, suggesting that the carborane cluster significantly affects headgroup reactivity. Film characterization included X-ray and ultraviolet photoelectron spectroscopies as well as contact angle goniometry. Using these carboranes, the germanium surface work function was tailored over 0.4 eV without significant changes to wetting properties.

Adsorption of Homotrifunctional 1,2,3-Benzenetriol on a Ge(100)-2 × 1 Surface

The adsorption of the homotrifunctional 1,2,3-benzenetriol on Ge(100)-2 × 1 has been investigated by density functional theory calculations, Fourier transform infrared spectroscopy, and X-ray-photoelectron spectroscopy. The results show that the adsorption can occur through OH dissociation of all three hydroxyl groups, and that all three reaction pathways are kinetically and thermodynamically favorable. A coverage-dependent analysis shows that at low coverage, the molecule reacts to form a mix of trifold and dually bound adsorbates. As the coverage increases, the reactions are limited to dissociative adsorption through single and dual attachments. Calculations on the three possible dually bound configurations further reveals that the dissociative adsorption of the third hydroxyl group is limited by geometrical constraints to only two reaction channels. Finally, the proximity between OH-groups in the molecule favors intra- and intermolecular hydrogen bonding, which stabilizes singly and dually bound adsorbate configurations and limits the reactivity of the functional groups.

A first-principles study on the adsorption of ethylenediamine on Ge(100)

We have performed density functional theory (DFT) calculations of the atomic and electronic structures of ethylenediamine on Ge(100). The two amine groups in ethylenediamine can interact with germanium surface atoms through a N-H dissociative nucleophilic reaction and/or N-dative bonding with an electron-deficient down Ge atom. Of the monodentate and row-bridged bidentate structures that formed, the dative-bonded configurations were found to be more stable than the NH dissociative adsorption structures. The formation of row-bridged bidentate, structures is more favorable than that of on-top or end-bridged structures. In simulated STM images, the three types of row-bridged adsorption structure have characteristic features, and the row-bridged dative-bonded configuration gives rise to features due to both adsorbed ethylenediamine molecules and the underlying Ge atoms.

Formation of Germa-ketenimine on the Ge(100) Surface by Adsorption of tert-Butyl Isocyanide

Reactions of the (100) surfaces of Ge and Si with organic molecules have been generally understood within the concept of "dimers" formed by the 2 × 1 surface reconstruction. In this work, the adsorption of tert-butyl isocyanide on the Ge(100)-2 × 1 surface at large exposures is investigated under ultrahigh vacuum conditions. A combination of infrared spectroscopy, X-ray photoelectron spectroscopy, and temperature-programmed desorption experiments along with dispersion-corrected density functional theory calculations is used to determine the surface products. Upon adsorption of a dense monolayer of tert-butyl isocyanide, a product whose structure resembles a germa-ketenimine (N=C=Ge) with σ donation toward and π back-donation from the Ge(100) surface appears. Formation of this structure involves divalent-type surface Ge atoms that arise from cleavage of the Ge(100)-2 × 1 surface dimers. Our results reveal an unprecedented class of reactions of organic molecules at the Ge(100) surface.

Formation of stable nitrene surface species by the reaction of adsorbed phenyl isocyanate at the Ge(100)-2 × 1 surface

The reaction of phenyl isocyanate (PIC) following adsorption at the Ge(100)-2 × 1 surface has been investigated both experimentally and theoretically by Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy, temperature-programmed desorption, quantum chemical calculations, and molecular dynamics simulations. PIC initially adsorbs by [2 + 2] cycloaddition across the C═N bond of the isocyanate, as previously reported, but this initial product converts to a second product on the time scale of minutes at room temperature. The experimental and theoretical results show that the second product formed is phenylnitrene (C6H5N) covalently bonded to the germanium surface via a single Ge-N bond. This conclusion is further supported by FTIR spectroscopy experiments and density functional theory calculations using phenyl isocyanate-(15)N and phenyl-d5 isocyanate.

Coverage dependent variation of the adsorption structure of 2-thiophenecarboxaldehyde on the Ge(100)-2 × 1 reconstructed surface

High-resolution photoemission spectroscopy (HRPES) measurements were collected and density functional theory (DFT) calculations were performed to track the exposure-dependent variation of the adsorption structure of 2-thiophenecarboxaldehyde (C₄H₃SCHO: TPCA) on the Ge(100) 2 × 1 reconstructed surface at room temperature. In an effort to identify the most probable adsorption structures on the Ge(100)-2 × 1 reconstructed surface, we deposited TPCA molecules at low exposure and at high exposure and compared the differences between the electronic features measured using HRPES. The HRPES data suggested three possible adsorption structures of TPCA on the Ge(100)-2 × 1 reconstructed surface, and DFT calculations were used to determine the plausibility of these structures. HRPES analysis corroborated by DFT calculations, indicated that an S-dative bonded structure is the most probable adsorption structure at relatively low exposure levels, the [4 + 2] cycloadduct structure is the second most probable structure, and the [2 + 2]-C=O cycloadduct structure is the least probable structure on the Ge(100)-2 × 1 reconstructed surface at relatively high exposure levels.

Functional group-selective adsorption using scanning tunneling microscopy

In this study, we selectively enhanced two types of adsorption of 3-mercaptoisobutyric acid on a Ge(100) surface by using the tunneling electrons from an STM and the catalytic effect of an STM tip. 3-Mercaptoisobutyric acid has two functional groups: a carboxylic acid group at one end of the molecule and a thiol group at the other end. It was found that the adsorption occurring through the carboxylic acid group was selectively enhanced by the application of electrons tunneling between an STM tip and the surface. Using this enhancement, it was possible to make thiol group-terminated surfaces at any desired location. In addition, via the use of a tungsten STM tip coated with a tungsten oxide (WO(3)) layer, we selectively catalyzed the adsorption through the thiol group. Using this catalysis, it was possible to generate carboxylic acid group-terminated surfaces at any desired location. This functional group-selective adsorption using STM could be applied in positive lithographic methods to produce semiconductor substrates terminated by desired functional groups.

One-step Melt Synthesis of Water Soluble, Photoluminescent, Surface-Oxidized Silicon Nanoparticles for Cellular Imaging Applications

We have developed a versatile, one-step melt synthesis of water-soluble, highly emissive silicon nanoparticles using bi-functional, low-melting solids (such as glutaric acid) as reaction media. Characterization through transmission electron microscopy, selected area electron diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy shows that the one-step melt synthesis produces nanoscale Si cores surrounded by a silicon oxide shell. Analysis of the nanoparticle surface using FT-IR, zeta potential, and gel electrophoresis indicates that the bi-functional ligand used in the one-step synthesis is grafted onto the nanoparticle, which allows for tuning of the particle surface charge, solubility, and functionality. Photoluminescence spectra of the as-prepared glutaric acid-synthesized silicon nanoparticles show an intense blue-green emission with a short (ns) lifetime suitable for biological imaging. These nanoparticles are found to be stable in biological media and have been used to examine cellular uptake and distribution in live N2a cells.

Disulfide passivation of the Ge(100)-2 × 1 surface

Understanding the bonding of sulfur at the germanium surface is important to developing good passivation routes for germanium-based electronic devices. The adsorption behavior of ethyl disulfide (EDS) and 1,8-naphthalene disulfide (NDS) at the Ge(100)-2 × 1 surface has been studied under ultrahigh vacuum conditions to investigate both their fundamental reactivity and their effectiveness as passivants of this surface. X-ray photoelectron spectroscopy, multiple internal reflection-infrared spectroscopy, and density functional theory results indicate that both molecules adsorb via S-S dissociation at room temperature. Upon exposure to ambient air, the thiolate adlayer remains intact for both EDS- and NDS-functionalized surfaces, indicating the stability of this surface attachment. Although both systems resist oxidation compared to the bare Ge(100)-2 × 1 surface, the Ge substrate is significantly oxidized in all cases (17-57% relative to the control), with the NDS-passivated surface undergoing up to two times more oxidation than the EDS-passivated surface at the longest air exposure times studied. The difference in passivation capability is attributed to the difference in surface coverage on Ge(100)-2 × 1, where EDS adsorption leads to a saturation coverage 17% higher than that for NDS/Ge(100)-2 × 1.

Tuning the reactivity of semiconductor surfaces by functionalization with amines of different basicity

Surface functionalization of semiconductors has been the backbone of the newest developments in microelectronics, energy conversion, sensing device design, and many other fields of science and technology. Over a decade ago, the notion of viewing the surface itself as a chemical reagent in surface reactions was introduced, and adding a variety of new functionalities to the semiconductor surface has become a target of research for many groups. The electronic effects on the substrate have been considered as an important consequence of chemical modification. In this work, we shift the focus to the electronic properties of the functional groups attached to the surface and their role on subsequent reactivity. We investigate surface functionalization of clean Si(100)-2 × 1 and Ge(100)-2 × 1 surfaces with amines as a way to modify their reactivity and to fine tune this reactivity by considering the basicity of the attached functionality. The reactivity of silicon and germanium surfaces modified with ethylamine (CH(3)CH(2)NH(2)) and aniline (C(6)H(5)NH(2)) is predicted using density functional theory calculations of proton attachment to the nitrogen of the adsorbed amine to differ with respect to a nucleophilic attack of the surface species. These predictions are then tested using a model metalorganic reagent, tetrakis(dimethylamido)titanium (((CH(3))(2)N)(4)Ti, TDMAT), which undergoes a transamination reaction with sufficiently nucleophilic amines, and the reactivity tests confirm trends consistent with predicted basicities. The identity of the underlying semiconductor surface has a profound effect on the outcome of this reaction, and results comparing silicon and germanium are discussed.

Reaction mechanism, bonding, and thermal stability of 1-alkanethiols self-assembled on halogenated Ge surfaces

We have employed synchrotron radiation photoemission spectroscopy to study the reaction mechanism, surface bonding, and thermal stability of 1-octadecanethiolate (ODT) self-assembled monolayers (SAMs) at Cl- and Br-terminated Ge(100) surfaces. Density functional theory (DFT) calculations were also carried out for the same reactions. From DFT calculations, we have found that adsorption of 1-octadecanethiol on the halide-terminated surface via hydrohalogenic acid elimination is kinetically favorable on both Cl- and Br-terminated Ge surfaces at room temperature, but the reactions are more thermodynamically favorable at Cl-terminated Ge surfaces. After ODT SAM formation at room temperature, photoemission spectroscopy experiments show that Ge(100) and (111) surfaces contain monothiolates and possibly dithiolates together with unbound thiol and atomic sulfur. Small coverages of residual halide are also observed, consistent with predictions by DFT. Annealing studies in ultrahigh vacuum show that the Ge thiolates are thermally stable up to 150 degrees C. The majority of the surface thiolates are converted to sulfide and carbide upon annealing to 350 degrees C. By 430 degrees C, no sulfur remains on the surface, whereas Ge carbide is stable to above 470 degrees C.

Periodic trends in organic functionalization of group IV semiconductor surfaces

Organic functionalization of group IV semiconductor surfaces provides a means to precisely control the interfacial properties of some of the most technologically important electronic materials in use today. The 2 x 1 reconstructed group IV (100) surfaces in ultrahigh vacuum, in particular, have a well-defined surface that allows adsorbate-surface interactions to be studied in detail. Surface dimers containing a strong sigma- and weak pi-bond form upon reconstruction of the group IV (100) surfaces, imparting a rich surface reactivity, which allows useful analogies to be made between reactions at the surface and those in classic organic chemistry. To date, most studies have focused on single substrates and a limited number of adsorbate functional groups. In this Account, we bring together experimental and theoretical results from several studies to investigate broader trends in thermodynamics and kinetics of organic molecules reacted with group IV (100)-2 x 1 surfaces. By rationalizing these trends in terms of simple periodic properties, we aim to provide guidelines by which to understand the chemical origin of the observed trends and predict how related molecules or functionalities will react. Results of experimental and theoretical studies are used to show that relative electronegativities and orbital overlap correlate well with surface-adsorbate covalent bond strength, while orbital overlap together with donor electronegativity and acceptor electron affinity correlate with surface-adsorbate dative bond strength. Using such simple properties as predictive tools is limited, of course, but theoretical calculations fill in some of the gaps. The predictive power inherent in periodic trends may be put to use in designing molecules for applications where controlled attachment of organic molecules to semiconductor surfaces is needed. Organic functionalization may facilitate the semiconductor industry's transition from traditional silicon-based architectures to other materials, such as germanium, that offer better electrical properties. Potential applications also exist in other fields ranging from organic and molecular electronics, where control of interfacial properties may allow coupling of traditional semiconductor technology with such developing technologies, to biosensors and nanoscale lithography, where the functionality imparted to the surface may be used directly. Knowledge of thermodynamic and kinetic trends and the fundamental basis of these trends may enable effective development of new functionalization strategies for such applications.

Intrarow adsorption structure of glycine on Ge(100)

The adsorption structure of glycine on Ge(100) was investigated using scanning tunneling microscopy (STM), density functional theory (DFT) calculations, and high-resolution core-level photoemission spectroscopy (HRCLPES). We found a major adsorption feature of glycine on Ge(100) in the STM images. This feature appeared as a bright protrusion between two dimer rows with a dark adjacent dimer. The position of the bright protrusion located in the middle of the two dimer rows indicates a multibonding adsorption structure. The results of the theoretical calculations confirm that the adsorption structure of glycine on Ge(100) (between two possible multibonding adsorption structures) is an "intrarow O-H dissociated and N dative bonded structure". In the HRCLPES experiments, we found an N 1s peak (at 399.5 eV) and two O 1s peaks (at 531.1 and 532.0 eV), which represent strong evidence that the adsorption configuration of glycine on Ge(100) is composed of both O-H dissociation and N dative bonding. All our STM, DFT, and HRCLPES results suggest that the adsorption structure of glycine molecules on Ge(100) is an "intrarow O-H dissociated and N dative bonded structure".

Formation of alkanethiolate self-assembled monolayers at halide-terminated Ge surfaces

We have studied Ge halide passivation and formation of 1-octadecanethiolate self-assembled monolayers (SAMs) at Cl- and Br-terminated Ge(100) and Ge(111) surfaces. The results of water contact angle measurements, ellipsometry, transmission infrared spectroscopy, X-ray photoelectron spectroscopy, and Auger electron spectroscopy show that good quality 1-alkanethiolate SAMs can be achieved at both Cl- and Br-terminated surfaces via direct Ge-S bonds. The quality of the SAMs depends on the concentration and the solvent of the 1-alkanethiol solution. Moreover, SAMs formed at Ge(100) surfaces have higher water contact angles, thicknesses, and ambient stability than those formed at Ge(111) surfaces. Surface passivation and light are found to play an important role in the packing and stability of the SAMs. Furthermore, well-packed SAMs can be retrieved by repassivation after degradation due to ambient exposure. This work presents novel routes for Ge surface passivation.

Phosphine adsorption on the In-rich InP(001) surface: evidence of surface dative bonds at room temperature

Adsorption of phosphine on indium phosphide compound semiconductor surfaces is a key process during the chemical vapor deposition of this material. Recent experimental infrared studies of the In-rich InP surfaces exposed to phosphine show a complex vibrational pattern in the P-H stretch region, presumably due to overlapping contributions from several structural species. We have performed density functional calculations using finite-sized cluster models to investigate the dissociative adsorption of PH3 on the In-rich InP surface. We find that initially PH3 forms a dative bond with one of the surface In atoms with a binding energy of approximately 11 kcal mol-1 at 298 K. The In-PH3 bond length is 2.9 A, 0.3 A greater than the In-P covalent bond length computed for In-PH2 species produced by hydrogen migration to a neighboring atom. However, the dissociation process, though exothermic, involves a significant activation barrier of approximately 23 kcal mol-1, suggesting the possibility of metastable trapping of the dative bonded PH3 molecules. Indeed, a careful vibrational analysis of different P-H stretching modes of the surface-bound PH3 and PH2 units gives excellent agreement with the observed infrared frequencies and their relative intensities. Moreover, at higher temperatures the frequency modes associated with PH3 disappear either due to desorption or dissociation of this molecule, an observation also well supported from the computed thermochemical parameters at different temperatures. The computed energy parameters and infrared analysis provide direct evidence that PH3 is present as a dative bonded complex on the InP surface at room temperature.

Semiconductor surface-induced 1,3-hydrogen shift: the role of covalent vs zwitterionic character

X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) are used to compare the reaction of 1,2-cyclohexanedione (1,2-CHD) with Si(001) and diamond(001) surface dimers under ultra-high-vacuum conditions. 1,2-CHD is known to undergo a keto-enol tautomerization, with the monoenol being the primary equilibrium species in the solid and gas phases. XPS and FTIR data demonstrate that 1,2-CHD reacts with diamond(001) through the OH group of the monoenol, resulting in only one O atom being bonded to the surface. In contrast, XPS and FTIR data suggest that both oxygen atoms in the 1,2-CHD molecule bond via Si-O-C linkages to the Si(001) surface dimer, and that the molecule undergoes an intramolecular 1,3-H shift. While the Si(001) and diamond(001) surfaces are both comprised of surface dimers, the diamond(001) dimer is symmetric, with little charge separation, whereas the Si(001) dimer is tilted and exhibits zwitterionic character. The different reaction products that are observed when clean Si(001) and diamond(001) surfaces are exposed to 1,2-CHD demonstrate the importance of charge separation in promoting a 1,3-H shift and provide new mechanistic insights that may be applicable to a variety of organic reactions.