Vapor–Liquid–Solid and Vapor–Solid Growth of Phase-Change Sb2Te3 Nanowires and Sb2Te3/GeTe Nanowire Heterostructures

Encapsulation of crystalline and amorphous Sb2S3 within carbon and boron nitride nanotubes

The recent rediscovery of 1D and quasi-1D (q-1D) van der Waals (vdW) crystals has laid foundation for the realization of emergent electronic, optical, and quantum-confined physical phenomena in both bulk and at the nanoscale. Of these, the highly anisotropic q-1D vdW crystal structure and the visible-light optical/optoelectronic properties of antimony trisulfide (Sb2S3) have led to its widespread consideration as a promising building block for photovoltaic and non-volatile phase change devices. However, while these applications will greatly benefit from well-defined and sub-nanometer-thick q-1D structures, little has been known about feasible synthetic routes that can access single covalent chains of Sb2S3. In this work, we explore how encapsulation in single or multi-walled carbon nanotubes (SWCNTs or MWCNTs) and visible-range transparent boron nitride nanotubes (BNNTs) influences the growth and phase of Sb2S3 nanostructures. We demonstrate that nanotubes with smaller diameters had a more pronounced effect in the crystallographic growth direction and orientation of Sb2S3 nanostructures, promoting the crystallization of the guest structures along the long-axis [010]-direction. As such, we were able to reliably access well-ordered few to single covalent chains of Sb2S3 when synthesized within defect-free SWCNTs with sub-2 nm inner diameters. Intriguingly, we found that the degree of crystalline order of Sb2S3 nanostructures was strongly influenced by the presence of defects and discontinuities along the Sb2S3-nanotube interface. We show that amorphous nanowire domains of Sb2S3 form around defect sites in larger, multi-walled nanotubes that manifest inner wall defects and discontinuities, suggesting a means to manipulate the crystallization dynamics of confined sub-10 nm-thick Sb2S3 nanostructures within nanotubes. Lastly, we show that ultranarrow amorphous Sb2S3 can impart functionality onto isolable BNNTs with photocurrent generation in the pA range which, alongside the dispersibility of the Sb2S3@BNNTs, could be leveraged to easily fabricate photoresistors only a few nm in width. Altogether, our results serve to solidify the understanding of how q-1D vdW pnictogen chalcogenides crystallize within confined synthetic platforms and are a step towards realizing functional materials from ensembles of encapsulated heterostructures.

Growth and characterization of germanium telluride nanowires via vapor-liquid-solid mechanism

Phase-change materials (PCMs), which can transition reversibly between crystalline and amorphous phases, have shown great promise for next-generation memory devices due to their nonvolatility, rapid switching periods, and random-access capability. Several groups have investigated phase-change nanowires for memory applications in recent years. The ability to regulate the scale of nanostructures remains one of the most significant obstacles in nanoscience. Herein, we describe the growth and characterization of germanium telluride (GeTe) nanowires, which are essential for phase-change memory devices. GeTe nanowires were produced by combining thermal evaporation and vapor-liquid-solid (VLS) techniques, using 8 nm Au nanoparticles as the metal catalyst. The influence of various growth parameters, including inert gas flow rate, working pressure, growth temperature, growth duration, and growth substrate, was examined. Ar gas flow rate of 30 sccm and working pressure of 75 Torr produced the narrowest GeTe nanowires horizontally grown on a Si substrate. Using scanning electron microscopy, the dimensions, and morphology of GeTe nanowires were analyzed. Transmission electron microscopy and energy-dispersive x-ray spectroscopy were utilized to conduct structural and chemical analyses. Using a SiO2/Si substrate produced GeTe nanowires that were thicker and lengthier. The current-voltage characteristics of GeTe nanowires were investigated, confirming the amorphous nature of GeTe nanowires using conductive atomic force microscopy. In addition, the effects of the VLS mechanism and the Gibbs-Thomson effect were analyzed, which enables the optimization of nanowires for numerous applications, such as memory and reservoir computing.

Shape and Composition Evolution in an Alloy Core-Shell Nanowire Heterostructure Induced by Adatom Diffusion

A core-shell nanowire heterostructure is an important building block for nanowire-based optoelectronic devices. In this paper, the shape and composition evolution induced by adatom diffusion is investigated by constructing a growth model for alloy core-shell nanowire heterostructures, taking diffusion, adsorption, desorption and incorporation of adatoms into consideration. With moving boundaries accounting for sidewall growth, the transient diffusion equations are numerically solved by the finite element method. The adatom diffusions introduce the position-dependent and time-dependent adatom concentrations of components A and B. The newly grown alloy nanowire shell depends on the incorporation rates, resulting in both shape and composition evolution during growth. The results show that the morphology of nanowire shell strongly depends on the flux impingement angle. With the increase in this impingement angle, the position of the largest shell thickness on sidewall moves down to the bottom of nanowire and meanwhile, the contact angle between shell and substrate increases to an obtuse angle. Coupled with the shell shapes, the composition profiles are shown as non-uniform along both the nanowire and the shell growth directions, which can be attributed to the adatom diffusion of components A and B. The impacts of parameters on the shape and composition evolution are systematically investigated, including diffusion length, adatom lifetime and corresponding ratios between components. This kinetic model is expected to interpret the contribution of adatom diffusion in growing alloy group-IV and group III-V core-shell nanowire heterostructures.

Design of Sb2Te3 nanoblades serialized by Te nanowires for a low-temperature near-infrared photodetector

The dangling bond on the surface of bulk materials makes it difficult for a physically contacted heterojunction to form an ideal contact. Thus, periodic epitaxial junctions based on Sb2Te3 nanoblades serialized by Te nanowires (Sb2Te3/Te) were fabricated using a one-step hydrothermal epitaxial growth method. X-ray diffraction and electron microscopy reveal that the as-prepared product has a good crystal shape and heterojunction construction, which are beneficial for a fast photoresponse due to the efficient separation of photogenerated carriers. When the Sb2Te3/Te composite is denoted as a photodetector, it shows superior light response performance. Electrical analysis showed that the photocurrent of the as-fabricated device declined with temperatures rising from 10K to 300K at 980 nm. The responsivity and detectivity were 9.5 × 1011 μA W−1 and 1.22 × 1011 Jones at 50 K, respectively, which shows better detection performance than those of other Te-based photodetector devices. Results suggest that the as-constructed near-infrared photodetector may exhibit prospective application in low-temperature photodetector devices.

Controllable Edge Epitaxy of Helical GeSe/GeS Heterostructures

Emerging twistronics based on van der Waals (vdWs) materials has attracted great interest in condensed matter physics. Recently, more neoteric three-dimensional (3D) architectures with interlayer twist are realized in germanium sulfide (GeS) crystals. Here, we further demonstrate a convenient way for tailoring the twist rate of helical GeS crystals via tuning of the growth temperature. Under higher growth temperatures, the twist angles between successive nanoplates of the GeS mesowires (MWs) are statistically smaller, which can be understood by the dynamics of the catalyst during the growth. Moreover, we fabricate self-assembled helical heterostructures by introducing germanium selenide (GeSe) onto helical GeS crystals via edge epitaxy. Besides the helical architecture, the moiré superlattices at the twisted interfaces are also inherited. Compared with GeS MWs, helical GeSe/GeS heterostructures exhibit improved electrical conductivity and photoresponse. These results manifest new opportunities in future electronics and optoelectronics by harnessing 3D twistronics based on vdWs materials.

Minute-Made, High-Efficiency Nanostructured Bi2Te3 via High-Throughput Green Solution Chemical Synthesis

Scalable synthetic strategies for high-quality and reproducible thermoelectric (TE) materials is an essential step for advancing the TE technology. We present here very rapid and effective methods for the synthesis of nanostructured bismuth telluride materials with promising TE performance. The methodology is based on an effective volume heating using microwaves, leading to highly crystalline nanostructured powders, in a reaction duration of two minutes. As the solvents, we demonstrate that water with a high dielectric constant is as good a solvent as ethylene glycol (EG) for the synthetic process, providing a greener reaction media. Crystal structure, crystallinity, morphology, microstructure and surface chemistry of these materials were evaluated using XRD, SEM/TEM, XPS and zeta potential characterization techniques. Nanostructured particles with hexagonal platelet morphology were observed in both systems. Surfaces show various degrees of oxidation, and signatures of the precursors used. Thermoelectric transport properties were evaluated using electrical conductivity, Seebeck coefficient and thermal conductivity measurements to estimate the TE figure-of-merit, ZT. Low thermal conductivity values were obtained, mainly due to the increased density of boundaries via materials nanostructuring. The estimated ZT values of 0.8-0.9 was reached in the 300-375 K temperature range for the hydrothermally synthesized sample, while 0.9-1 was reached in the 425-525 K temperature range for the polyol (EG) sample. Considering the energy and time efficiency of the synthetic processes developed in this work, these are rather promising ZT values paving the way for a wider impact of these strategic materials with a minimum environmental impact.

Spin-momentum locking induced non-local voltage in topological insulator nanowire

The momentum and spin of charge carriers in the topological insulators are constrained to be perpendicular to each other due to the strong spin-orbit coupling. We have investigated this unique spin-momentum locking property in Sb2Te3 topological insulator nanowires by injecting spin-polarized electrons through magnetic tunnel junction electrodes. Non-local voltage measurements exhibit an asymmetry with respect to the magnetic field applied perpendicular to the nanowire channel, which is remarkably different from that of a non-local measurement in a channel that lacks spin-momentum locking. In stark contrast to conventional non-local spin valves, simultaneous reversal of magnetic moments of all magnetic contacts to the Sb2Te3 nanowire alters the non-local voltage. This unusual asymmetry is a clear signature of the spin-momentum locking in the Sb2Te3 nanowire surface states.

Approaching high-performance of ordered structure Sb2Te3 film via unique angular intraplanar grain boundaries

In this paper, we present an innovative electric-field-assisted magnetron-sputtering deposition method for films preparation. By grain boundary-engineering, we successeful obtained the ordered Sb2Te3 film with greatly high figure of merit via controlling external electric field. It has been found that the electric field can induce the change in the angle of intraplanar grain boundaries between (0 1 5) and (0 1 5) planes, which leads to the enhanced holes mobility and maintained low thermal conductivity. The energy filtering takes place at the angular intraplanar grain boundaries. At room temperature, a high ZT value of 1.75 can be achieved in the deposited Sb2Te3 film under 30 V external electric field. This is a very promising approach that the electric field induced deposition can develop high-performance Sb2Te3-based thermoelectric films.

Diameter- and Length-controlled Synthesis of Ultrathin ZnS Nanowires and Their Size-Dependent UV Absorption Properties, Photocatalytical Activities and Band-Edge Energy Levels

Benefiting from their ultra-small diameters and highly structural anisotropies, ultrathin semiconductor nanowires (USNWs) are well-known for their fascinating physical/chemical properties, as well as their promising applications in various fields. However, until now, it remains a challenge to synthesize high-quality USNWs with well-controlled diameters and lengths, let alone the exploration of their size-dependent properties and applications. To solve such a challenge, we report herein a ligand-induced low-temperature precursor thermolysis route for the controlled preparation of ultrathin ZnS nanowires, which is based on the oriented assembly of the in-situ formed ZnS clusters/tiny particles. Optimized synthetic conditions allowed the synthesis of ZnS nanowires with a diameter down to 1.0 nm and a length approaching 330 nm. The as-prepared ultrathin ZnS nanowires were then intensively examined by morphological, spectroscopic and electrochemical analytical means to explore their size-dependent optical absorption properties, photocatalytic activities and band-edge energy levels, as well as their underlying growth mechanism. Notably, these USNWs, especially for the thinnest nanowires, were identified to possess an excellent performance in both the selective absorption of ultraviolet (UV) light and photocatalytic degradation of dyes, thus enabling them to serve as longpass ultraviolet filters and high-efficiency photocatalysts, respectively. For the ultrathin ZnS nanowires with a diameter of 1.0 nm, it was also interesting to observe that their exciton absorption peak positions were kept almost unchanged during the continuous extension of their lengths, which has not been reported previously.

Electronic properties of (Sb;Bi)2Te3 colloidal heterostructured nanoplates down to the single particle level

We investigate the potential use of colloidal nanoplates of Sb₂Te₃ by conducting transport on single particle with in mind their potential use as 3D topological insulator material. We develop a synthetic procedure for the growth of plates with large lateral extension and probe their infrared optical and transport properties. These two properties are used as probe for the determination of the bulk carrier density and agree on a value in the 2–3 × 10¹⁹ cm⁻³ range. Such value is compatible with the metallic side of the Mott criterion which is also confirmed by the weak thermal dependence of the conductance. By investigating the transport at the single particle level we demonstrate that the hole mobility in this system is around 40 cm²V⁻¹s⁻¹. For the bulk material mixing n-type Bi₂Te₃ with the p-type Sb₂Te₃ has been a successful way to control the carrier density. Here we apply this approach to the case of colloidally obtained nanoplates by growing a core-shell heterostructure of Sb₂Te₃/Bi₂Te₃ and demonstrates a reduction of the carrier density by a factor 2.5.

Quantum Transport and Nano Angle-resolved Photoemission Spectroscopy on the Topological Surface States of Single Sb2Te3 Nanowires

We report on low-temperature transport and electronic band structure of p-type Sb2Te3 nanowires, grown by chemical vapor deposition. Magnetoresistance measurements unravel quantum interference phenomena, which depend on the cross-sectional dimensions of the nanowires. The observation of periodic Aharonov-Bohm-type oscillations is attributed to transport in topologically protected surface states in the Sb2Te3 nanowires. The study of universal conductance fluctuations demonstrates coherent transport along the Aharonov-Bohm paths encircling the rectangular cross-section of the nanowires. We use nanoscale angle-resolved photoemission spectroscopy on single nanowires (nano-ARPES) to provide direct experimental evidence on the nontrivial topological character of those surface states. The compiled study of the bandstructure and the magnetotransport response unambiguosly points out the presence of topologically protected surface states in the nanowires and their substantial contribution to the quantum transport effects, as well as the hole doping and Fermi velocity among other key issues. The results are consistent with the theoretical description of quantum transport in intrinsically doped quasi-one-dimensional topological insulator nanowires.

Solvothermal synthesis of wire-like SnxSb2Te3+x with an enhanced thermoelectric performance

Nanostructured tellurides have attracted increasing attention in thermoelectric applications for waste heat recovery and cooling devices. Here, we report on the synthesis of wire-like SnxSb2Te3+x (x = 0, 0.02 and 0.05) nanoparticles using elemental precursors in EG. The enhanced thermoelectric performance was achieved in alloyed samples due to the increase of carrier population in heavy valence band valleys by incorporating Sn(2+) at the Sb(3+) sublattice, enabling the simultaneous realization of low electrical resistivity along with a high Seebeck coefficient as well as the decline of thermal conductivity. Thus a boosted power factor and low thermal conductivity lead to the highest ZT value of 0.58 at 150 °C in the Sn0.02Sb2Te3.02 sample. Our research offers a general wet-chemical route for the preparation of one-dimensional nanomaterials and probably promotes the practical thermoelectric applications of Sb2Te3-based materials at low temperatures.

A Facile Surfactant-Assisted Reflux Method for the Synthesis of Single-Crystalline Sb2Te3 Nanostructures with Enhanced Thermoelectric Performance

Antimony telluride (Sb2Te3) and its based alloys are of importance to p-type semiconductors for thermoelectric applications near room temperature. Herein, we report a simple, low-energy intensive, and scalable surfactant-assisted reflux method for the synthesis of Sb2Te3 nanoparticles in the solvent ethylene glycol (EG) at low temperatures (120-180 °C). The formation mechanism of platelike Sb2Te3 nanoparticles is proposed. Also, it is found that the size, shape, and chemical composition of the products could be controlled by the introduction of organic surfactants (CTAB, PVP, etc.) or inorganic salts (EDTA-Na2, NaOH, etc.). Additionally, the collected Sb2Te3 nanoparticles were further fabricated into nanostructured pellets using cold-compaction and annealing techniques. Low resistivity [(7.37-19.4) × 10(-6) Ω m], moderate Seebeck coefficient (103-141 μV K(-1)), and high power factor (10-16 × 10(-4) W m(-1) K(-2)) have been achieved in our Sb2Te3-nanostructured bulk materials. The relatively low thermal conductivity (1.32-1.55 W m(-1) K(-1)) is attained in the nanobulk made of PVP-modified nanoparticles, and values of ZT in the range of 0.24-0.37 are realized at temperatures ranging from 50 to 200 °C. Our researches set forth a new avenue in promoting practical applications of Sb2Te3-based thermoelectric power generation or cooling devices.

In Situ Temperature-Dependent Transmission Electron Microscopy Studies of Pseudobinary mGeTe·Bi₂Te₃ (m = 3-8) Nanowires and First-Principles Calculations

Phase-change nanowires (NWs) have emerged as critical materials for fast-switching nonvolatile memory devices. In this study, we synthesized a series of mGeTe·Bi2Te3 (GBT) pseudobinary alloy NWs-Ge3Bi2Te6 (m = 3), Ge4Bi2Te7 (m = 4), Ge5Bi2Te8 (m = 5), Ge6Bi2Te9 (m = 6), and Ge8Bi2Te11 (m = 8)-and investigated their composition-dependent thermal stabilities and electrical properties. As m decreases, the phase of the NWs evolves from the cubic (C) to the hexagonal (H) phase, which produces unique superlattice structures that consist of periodic 2.2-3.8 nm slabs for m = 3-8. In situ temperature-dependent transmission electron microscopy reveals the higher thermal stability of the compositions with lower m values, and a phase transition from the H phase into the single-crystalline C phase at high temperatures (400 °C). First-principles calculations, performed for the superlattice structures (m = 1-8) of GBT and mGeTe·Sb2Te3 (GST), show an increasing stability of the H phase (versus the C phase) with decreasing m; the difference in stability being more marked for GBT than for GST. The calculations explain remarkably the phase evolution of the GBT and GST NWs as well as the composition-dependent thermal stabilities. Measurement of the current-voltage curves for individual GBT NWs shows that the resistivity is in the range 3-25 mΩ·cm, and the resistivity of the H phase is lower than that of the C phase, which has been supported by the calculations.

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures

In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.

Scalable synthesis of two-dimensional antimony telluride nanoplates down to a single quintuple layer

Ultra-thin Sb₂Te₃nanoplates were grown through a vapor–solid process with controllable thickness down to a single quintuple layer.

Selective decoration of nanocrystals on single-crystalline PtTe nanowires based on a solid-state reaction

We demonstrate the fabrication of single-crystalline PtTe nanowires with/without decoration of Sb nanocrystals via thermal annealing of Sb₂Te₃/Pt and Te/Pt core/shell nanowires.

Assembly synthesis of Cu2O-on-Cu nanowires with visible-light-enhanced photocatalytic activity

The designed visible-light-driven Cu₂O-on-Cu nanowire photocatalysts exhibit high-performance catalytic degradation of dye pollutants, suggesting potential applications in aquatic environments.

Low temperature, shape-selective formation of Sb2Te3 nanomaterials and their thermoelectric applications

Thermoelectric properties of shape-selective Sb₂Te₃ nanomaterials which synthesized at a low temperature within a short reaction time have been reported.

Flow-based solution-liquid-solid nanowire synthesis

Discovered almost two decades ago, the solution-liquid-solid (SLS) method for semiconductor nanowire synthesis has proven to be an important route to high-quality, single-crystalline anisotropic nanomaterials. In execution, the SLS technique is similar to colloidal quantum-dot synthesis in that it entails the injection of chemical precursors into a hot surfactant solution, but mechanistically it is considered the solution-phase analogue to vapour-liquid-solid (VLS) growth. Both SLS and VLS methods make use of molten metal nanoparticles to catalyse the nucleation and elongation of single-crystalline nanowires. Significantly, however, the methods differ in how chemical precursors are introduced to the metal catalysts. In SLS, precursors are added in a one-off fashion in a flask, whereas in VLS they are carried by a flow of gas through the reaction chamber, and by-products are removed similarly. The ability to dynamically control the introduction of reactants and removal of by-products in VLS synthesis has enabled a degree of synthetic control not possible with SLS growth. We show here that SLS synthesis can be transformed into a continuous technique using a microfluidic reactor. The resulting flow-based SLS ('flow-SLS') platform allows us to slow down the synthesis of nanowires and capture mechanistic details concerning their growth in the solution phase, as well as synthesize technologically relevant axially heterostructured semiconductor nanowires, while maintaining the propensity of SLS for accessing ultrasmall diameters below 10 nm.

Low-dimensional Te-based nanostructures

Low-dimensional Te-based nanomaterials have attracted intense attention in recent years due to their novel physical properties including surface-state effects, photoelectricity, phase changes, and thermoelectricity. The recent development of synthesis methods of low-dimensional Te-based nanostructures is reviewed, such as van der Waals expitaxial growth and template-assisted solution-phase deposition. In addition, the unique properties of these materials, such as tunable surface states, high photoresponsivity, fast phase change, and high thermoelectricity figure of merit, are reviewed. The potential applications of low-dimensional Te-based nanostructures are broad but particularly promising for nanoscale electronic and photoelectronic devices.

Thermoelectric characterization of bismuth telluride nanowires, synthesized via catalytic growth and post-annealing

Bi(2) Te(3) nanowires are of significant interest for two fields: nanostructured thermoelectrics and topological insulators. The vapor-liquid-solid method is employed in combination with annealing in a Te atmosphere, to obtain single-crystalline Bi(2) Te(3) nanowires with reproducible electronic transport properties (electrical conductivity and Seebeck coefficient) that are close to those of intrinsic bulk Bi(2) Te(3) .

Role of boundary layer diffusion in vapor deposition growth of chalcogenide nanosheets: the case of GeS

We report a synthesis of single-crystalline two-dimensional GeS nanosheets using vapor deposition processes and show that the growth behavior of the nanosheet is substantially different from those of other nanomaterials and thin films grown by vapor depositions. The nanosheet growth is subject to strong influences of the diffusion of source materials through the boundary layer of gas flows. This boundary layer diffusion is found to be the rate-determining step of the growth under typical experimental conditions, evidenced by a substantial dependence of the nanosheet's size on diffusion fluxes. We also find that high-quality GeS nanosheets can grow only in the diffusion-limited regime, as the crystalline quality substantially deteriorates when the rate-determining step is changed away from the boundary layer diffusion. We establish a simple model to analyze the diffusion dynamics in experiments. Our analysis uncovers an intuitive correlation of diffusion flux with the partial pressure of source materials, the flow rate of carrier gas, and the total pressure in the synthetic setup. The observed significant role of boundary layer diffusions in the growth is unique for nanosheets. It may be correlated with the high growth rate of GeS nanosheets, ~3-5 μm/min, which is 1 order of magnitude higher than other nanomaterials (such as nanowires) and thin films. This fundamental understanding of the effect of boundary layer diffusions may generally apply to other chalcogenide nanosheets that can grow rapidly. It can provide useful guidance for the development of general paradigms to control the synthesis of nanosheets.

Structural and electrical characterization of Bi₂Se₃ nanostructures grown by metal-organic chemical vapor deposition

We characterize nanostructures of Bi(2)Se(3) that are grown via metal-organic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 μm long or thin micrometer-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mΩ·cm. We observe weak antilocalization and extract a phase coherence length l(ϕ) = 178 nm and spin-orbit length l(so) = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.

Selective synthesis and superconductivity of In-Sn intermetallic nanowires sheathed in carbon nanotubes

We demonstrate a simple and reproducible technique to synthesize crystalline and superconducting In-Sn intermetallic nanowires sheathed in carbon nanotubes (CNTs). The method is based on the catalytic reaction of C(2)H(2) over a mixture of both SnO(2) and In(2)O(3) particles. Importantly, tetragonal β-In(3)Sn and hexagonal γ-InSn(4) nanowires with diameters of less than 100 nm are selectively synthesized at different SnO(2) to In(2)O(3) weight ratios. CNTs may serve as cylindrical nanocontainers for continuous growth of liquid-phased In(1-x)Sn(x) nanowires during growth process as well as for their solidification into In-Sn intermetallic nanowires during the cooling process. Microscopic and spectroscopic analyses clearly reveal evidence of a core-shell structure of the CNT-sheathed In-Sn intermetallic nanowires. Magnetization measurements show that the superconducting In-Sn nanowires have a critical magnetic field higher than the value of their bulk intermetallic compounds. Our method can be adopted to the nanofabrication of analogous binary and ternary alloys.

Direct synthesis of high-density lead sulfide nanowires on metal thin films towards efficient infrared light conversion

We report chemical-vapor-deposition (CVD) synthesis of high-density lead sulfide (PbS) nanowire arrays and nano pine trees directly on Ti thin films, and the fabrication of photovoltaic devices based upon the PbS nanowires. The as-grown nanowire arrays are largely vertically aligned to the substrates and are uniformly distributed over a relatively large area. Field effect transistors incorporating single PbS nanowires show p-type conduction and high mobilities. These catalytic metal thin films also serve as photocarrier collection electrodes and greatly facilitate device integration. For the first time, we have fabricated Schottky junction photovoltaic devices incorporating PbS nanowires, which demonstrate the capability of converting near-infrared light to electricity. The PbS nanowire devices are stable in air and their external quantum efficiency shows no significant decrease over a period of 3 months in air. We have also compared the photocurrent direction and quantum efficiencies of photovoltaic devices made with different metal electrodes, and the results are explained by band bending at the Schottky junction. Our research shows that PbS nanowires are promising building blocks for collecting near-infrared solar energy.

Confining grains of textured Cu2O films to single-crystal nanowires and resultant change in resistive switching characteristics

By confining columnar grains of textured oxide film using anodized aluminum oxide template, we could obtain a grain-boundary-free (GB-free) cuprous oxide (Cu(2)O) nanowire arrays with a narrow diameter distribution and a high density under the same electrochemical deposition condition. A two-terminal device fabricated using an individual GB-free nanowire and Au/Cr electrodes exhibits bipolar resistive switching contrary to the unipolar one of a textured film, and Schottky-like conduction. On the other hand, a nanowire device with Pt electrodes reveals non-switching behavior and Ohmic conduction. Thus, we can propose that the bipolar switching of a nanowire device with Au/Cr electrodes may result from the modulation of Schottky barrier at the interface by migration of oxygen vacancies while the unipolar one of a textured film may be defined as the bulky filamentary switching along the GBs in the GB-embedded texture films.

Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires

The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.

Controlled CVD growth of Cu-Sb alloy nanostructures

Sb based alloy nanostructures have attracted much attention due to their many promising applications, e.g. as battery electrodes, thermoelectric materials and magnetic semiconductors. In many cases, these applications require controlled growth of Sb based alloys with desired sizes and shapes to achieve enhanced performance. Here, we report a flexible catalyst-free chemical vapor deposition (CVD) process to prepare Cu-Sb nanostructures with tunable shapes (e.g. nanowires and nanoparticles) by transporting Sb vapor to react with copper foils, which also serve as the substrate. By simply controlling the substrate temperature and distance, various Sb-Cu alloy nanostructures, e.g. Cu(11)Sb(3) nanowires (NWs), Cu(2)Sb nanoparticles (NPs), or pure Sb nanoplates, were obtained. We also found that the growth of Cu(11)Sb(3) NWs in such a catalyst-free CVD process was dependent on the substrate surface roughness. For example, smooth Cu foils could not lead to the growth of Cu(11)Sb(3) nanowires while roughening these smooth Cu foils with rough sand papers could result in the growth of Cu(11)Sb(3) nanowires. The effects of gas flow rate on the size and morphology of the Cu-Sb alloy nanostructures were also investigated. Such a flexible growth strategy could be of practical interest as the growth of some Sb based alloy nanostructures by CVD may not be easy due to the large difference between the condensation temperature of Sb and the other element, e.g. Cu or Co.

Chalcogenide phase-change memory nanotubes for lower writing current operation

We report the synthesis and characterization of Sb-doped Te-rich nanotubes, and study their memory switching properties under the application of electrical pulses. Te-rich nanotubes display significantly low writing currents due to their small cross-sectional areas, which is desirable for power-efficient memory operation. The nanotube devices show limited resistance ratio and cyclic switching capability owing to the intrinsic properties of Te. The observed memory switching properties of this new class of nanostructured memory elements are discussed in terms of fundamental materials properties and extrinsic geometrical effects.

Diameter dependence of the transport properties of antimony telluride nanowires

We report measurements of electronic, thermoelectric, and galvanomagnetic properties of individual single crystal antimony telluride (Sb(2)Te(3)) nanowires with diameters in the range of 20-100 nm. Temperature-dependent resistivity and thermoelectric power (TEP) measurements indicate hole dominant diffusive thermoelectric generation with an enhancement of the TEP for smaller diameter wires up to 110 microV/K at T = 300 K. We measure the magnetoresistance in magnetic fields both parallel and perpendicular to the nanowire [110] axis, where strong anisotropic positive magnetoresistance behavior was observed.

Few-layer nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with highly tunable chemical potential

A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi(2)Se(3), Bi(2)Te(3), and Sb(2)Te(3) are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi(2)Te(3) and Bi(2)Se(3) nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO(2)/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential.

Vertical silicon nanowires as a universal platform for delivering biomolecules into living cells

A generalized platform for introducing a diverse range of biomolecules into living cells in high-throughput could transform how complex cellular processes are probed and analyzed. Here, we demonstrate spatially localized, efficient, and universal delivery of biomolecules into immortalized and primary mammalian cells using surface-modified vertical silicon nanowires. The method relies on the ability of the silicon nanowires to penetrate a cell's membrane and subsequently release surface-bound molecules directly into the cell's cytosol, thus allowing highly efficient delivery of biomolecules without chemical modification or viral packaging. This modality enables one to assess the phenotypic consequences of introducing a broad range of biological effectors (DNAs, RNAs, peptides, proteins, and small molecules) into almost any cell type. We show that this platform can be used to guide neuronal progenitor growth with small molecules, knock down transcript levels by delivering siRNAs, inhibit apoptosis using peptides, and introduce targeted proteins to specific organelles. We further demonstrate codelivery of siRNAs and proteins on a single substrate in a microarray format, highlighting this technology's potential as a robust, monolithic platform for high-throughput, miniaturized bioassays.

Topological insulator nanowires and nanoribbons

Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi(2)Se(3) material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi(2)Se(3) nanomaterials with a variety of morphologies. The synthesis of Bi(2)Se(3) nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with approximately 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.