Anisotropy of Chemical Transformation from In2Se3 to CuInSe2 Nanowires through Solid State Reaction

Decompression-Driven Superconductivity Enhancement in In2 Se3

An unexpected superconductivity enhancement is reported in decompressed In₂ Se₃ . The onset of superconductivity in In₂ Se₃ occurs at 41.3 GPa with a critical temperature (T_c ) of 3.7 K, peaking at 47.1 GPa. The striking observation shows that this layered chalcogenide remains superconducting in decompression down to 10.7 GPa. More surprisingly, the highest T_c that occurs at lower decompression pressures is 8.2 K, a twofold increase in the same crystal structure as in compression. It is found that the evolution of T_c is driven by the pressure-induced R-3m to I-43d structural transition and significant softening of phonons and gentle variation of carrier concentration combined in the pressure quench. The novel decompression-induced superconductivity enhancement implies that it is possible to maintain pressure-induced superconductivity at lower or even ambient pressures with better superconducting performance.

Two-dimensional layered chalcogenides: from rational synthesis to property control via orbital occupation and electron filling

Electron occupation of orbitals in two-dimensional (2D) layered materials controls the magnitude and anisotropy of the interatomic electron transfer and exerts a key influence on the chemical bonding modes of 2D layered lattices. Therefore, their orbital occupations are believed to be responsible for massive variations of the physical and chemical properties from electrocatalysis and energy storage, to charge density waves, superconductivity, spin-orbit coupling, and valleytronics. Especially in nanoscale structures such as nanoribbons, nanoplates, and nanoflakes, 2D layered materials provide opportunities to exploit new quantum phenomena. In this Account, we report our recent progress in the rational design and chemical, electrochemical, and electrical modulations of the physical and chemical properties of layered nanomaterials via modification of the electron occupation in their electronic structures. Here, we start with the growth and fabrication of a group of layered chalcogenides with varied orbital occupation (from 4d/5d electron configuration to 5p/6p electron configuration). The growth techniques include bottom-up methods, such as vapor-liquid-solid growth and vapor-solid growth, and top-down methods, such as mechanical exfoliation with tape and AFM tip scanning. Next, we demonstrate the experimental strategies for the tuning of the chemical potential (orbital occupation tuned with electron filling) and the resulting modulation of the electronic states of layered materials, such as electric-double-layer gating, electrochemical intercalation, and chemical intercalation with molecule and zerovalence metal species. Since the properties of layered chalcogenides are normally dominated by the specific band structure around which the chemical potential is sitting, their desired electronic states and properties can be modulated in a large range, showing unique phenomena including quantum electronic transport and extraordinary optical transmittance. As the most important part of this Account, we further demonstrate some representative examples for the tuning of catalytic, optical, electronic, and spintronic properties of 2D layered chalcogenides, where one can see not only edge-state induced enhancement of catalysis, quantum Aharonov-Bohm interference of the topological surface states, intercalation modulated extraordinary transmittance, and surface plasmonics but also external gating induced superconductivity and spin-coupled valley photocurrent. Since our findings reflect the critical influences of the electron filling of orbital occupation to the properties in 2D layered chalcogenides, we thus last highlight the importance and the prospective of orbital occupation in 2D layered materials for further exploring potential functionalized applications.

Synthesis and characterization of self-assembled three-dimensional flower-like iron(iii) oxide–indium(iii) oxide binary nanocomposites

Three-dimensional flower-like iron(iii) oxide–indium(iii) oxide binary metal oxide nanocomposites were successfully fabricated by a simple and economical route; and it can be used as fillers to significantly enhance the thermal resistance of silicone rubber under nitrogen.

Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm.

PACS

61.46. + w; 61.41.e; 81.15.Fg; 81.07.b.

Synthesis and Ultrafast Carrier Dynamics of Single-Crystal Two-Dimensional CuInSe2 Nanosheets

We report, for the first time, the synthesis of single-crystal two-dimensional (2D) CuInSe2 nanosheets and the studies of ultrafast carrier dynamics and transport in this 2D material. Particularly, single-crystal 2D CuInSe2 with various thicknesses in the nanometer regime were fabricated by a solid-state chemical reaction between Cu and single-crystal exfoliated In2Se3 nanosheets. Characteristics of transient optical reflectivity, obtained from femtosecond optical pump-probe measurements on single CuInSe2 nanosheets, suggest that the hot carrier cooling process dominates the carrier dynamics within a few picoseconds following the optical excitation. Spatially resolved pump-probe measurements, coupled to simple model calculations, were used to obtain the ambipolar hot carrier diffusion coefficient in single nanosheets. The dependence of the hot carrier diffusion coefficient on the nanosheet thickness provides insight into the limiting mechanisms of hot carrier transport and can be used to gauge the possibility of efficient hot carrier collection in nanostructured CuInSe2 solar cells.

Indium selenides: structural characteristics, synthesis and their thermoelectric performances

Indium selenides have attracted extensive attention in high-efficiency thermoelectrics for waste heat energy conversion due to their extraordinary and tunable electrical and thermal properties. This Review aims to provide a thorough summary of the structural characteristics (e.g. crystal structures, phase transformations, and structural vacancies) and synthetic methods (e.g. bulk materials, thin films, and nanostructures) of various indium selenides, and then summarize the recent progress on exploring indium selenides as high-efficiency thermoelectric materials. By highlighting challenges and opportunities in the end, this Review intends to shine some light on the possible approaches for thermoelectric performance enhancement of indium selenides, which should open up an opportunity for applying indium selenides in the next-generation thermoelectric devices.

Wide range photodetector based on catalyst free grown indium selenide microwires

We first report the catalyst free growth of indium selenide microwires through a facile approach in a horizontal tube furnace using indium and selenium elemental powders as precursors. The synthesized microwires are γ-phase, high quality, single crystalline and grown along the [112̅0] direction. The wires have a uniform diameter of ∼1 μm and lengths of several micrometers. Photodetectors fabricated from synthesized microwires show reliable and stable photoresponse exhibiting a photoresponsivity of 0.54 A/W, external quantum efficiency of 1.23 at 633 nm with 4 V bias. The photodetector has a reasonable response time of 0.11 s and specific detectivity of 3.94 × 10(10) Jones at 633 nm with a light detection range from 350 to 1050 nm, covering the UV-vis-NIR region. The photoresponse shown by single wire is attributed to direct band gap (Eg = 1.3 eV) and superior single crystalline quality. The photoresponsive studies of single microwires clearly suggest the use of this new and facile growth technique without using catalysts for fabrication of indium selenide microwires in next-generation sensors and detectors for commercial and military applications.

Controllable synthesis of ultrasmall CuInSe2 quantum dots for photovoltaic application

Ultrasmall CuInSe₂ quantum dots were synthesized by a facile solvothermal method and used as a sensitizer in CdS/CuInSe₂ quantum dot solar cells to improve the photovoltaic performance.

Templated synthesis of nanostructured materials

Templating is one of the most important techniques for the controlled synthesis of nanostructured materials. This powerful tool uses a pre-existing guide with desired nanoscale features to direct the formation of nanomaterials into forms that are otherwise difficult to obtain. As a result, templated synthesis is capable of producing nanostructures with unique structures, morphologies and properties. In this review, we summarize the general principles of templated synthesis and cover recent developments in this area. As a wide variety of synthesis techniques are utilized to produce nanomaterials using template-based methods, the discussion is organized around the various types of common templates. We examine the use of both physical and chemical hard colloidal templates, soft templates, and other non-colloidal templates, followed by our perspective on the state of the field and potential future directions.

CuInSe2 nanowires from facile chemical transformation of In2Se3 and their integration in single-nanowire devices

Nanowire solar cells are receiving a significant amount of attention for their potential to improve light absorption and charge collection in photovoltaics. Single-nanowire solar cells offer the ability to investigate performance limits for macroscale devices, as well as the opportunity for in-depth structural characterization and property measurement in small working devices. Copper indium selenide (CIS) is a material uniquely suited to these investigations. Not only could nanowire solar cells of CIS perhaps allow efficient macroscale photovoltaics to be fabricated while reducing the amount of CIS required, important for a system with possible resource limitations, but it is also a photovoltaic material for which fundamental understanding has been elusive. We here present a recipe for a scaled up vapor liquid solid based synthesis of CIS nanowires, in-depth material and property correlation of single crystalline CIS nanowires, and the first report of a single CIS nanowire solar cell. The synthesis was accomplished by annealing copper-coated In2Se3 nanowires at a moderate temperature of 350 °C, leading to solid-state reaction forming CIS nanowires. These nanowires are p-type with a resitivity of 6.5 Ωcm. Evidence is observed for a strong diameter dependence on the nanowire transport properties. The single-nanowire solar cells have an open-circuit voltage of 500 mV and a short-circuit current of 2 pA under AM 1.5 illumination.

Surfactant-free CuInSe₂ nanocrystals transformed from In₂Se₃ nanoparticles and their application for a flexible UV photodetector

In(2)Se(3) nanoparticles were synthesized in an aqueous solution without using any surfactant and then chemically transformed into CuInSe(2) nanocrystals. The transformation was thermodynamically favorable and fast. The 93% production yield in mild reaction conditions allowed mass production of the CuInSe(2) nanocrystals. By the virtue of the surface charges, the CuInSe(2) nanocrystals were well dispersed in polar solvents. The surfactant-free nanocrystals enabled the formation of semiconducting CuInSe(2) films on a flexible polymer substrate without any thermal treatment. We took advantage of this to fabricate a flexible UV photodetector. The current and sensitivity of the devices could be improved by utilizing CuInSe(2) nanocrystals annealed at 160 °C in the reaction batch. On bending test, the detection sensitivity remained the same until the bending radius was reduced down to 4 mm. The dynamic response of the film device was stable and reproducible during light illumination (350 nm).

Growth of CuInSe2 and In2Se3/CuInSe2 nano-heterostructures through solid state reactions

In(2)Se(3) is an essential phase change material and CuInSe(2) is the fundamental basis of the copper-indium-gallium-diselenide (CIGS) solar energy material. In this paper, we demonstrate the feasibility to transform the phase change material to the solar energy material via the solid state reaction. The In(2)Se(3) nanobelts (NBs) were synthesized via the vapor-liquid-solid mechanism. The chemical composition and the optical properties were investigated by energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and reflectance and photoluminescence spectra. In the in situ observation of the solid state reaction with Cu to form the CuInSe(2) NBs with ultrahigh vacuum transmission electron microscopy, we observed the In(2)Se(3)/CuInSe(2) transformation at atomic scale in real time. The progression of the atomic layer at the interface provided the pertinent information on the kinetic mechanism. In(2)Se(3)/CuInSe(2) nano-heterostructures were also obtained in the present investigation. The approach to the CIGS nanosolar cell was also proposed. This study shall be beneficial in the development of high-performance nanowire solar cells and nanodevices with In(2)Se(3)/CuInSe(2) nano-heterostructures.

Growth of dandelion-shaped CuInSe2 nanostructures by a two-step solvothermal process

CuInSe(2) (CIS) nanodandelion structures were synthesized by a two-step solvothermal approach. First, InSe nanodandelions were prepared by reacting In(acac)(3) with trioctylphosphine-selenide (TOP-Se) in 1-octadecene (ODE) at 170 °C in the presence of oleic acid. These InSe dandelions were composed of polycrystalline nanosheets with thickness < 10 nm. The size of the InSe dandelions could be tuned within the range of 300 nm-2 µm by adjusting the amount of oleic acid added during the synthesis. The InSe dandelion structures were then reacted with Cu(acac)(2) in the second-step solvothermal process in ODE to form CIS nanodandelions. The band gap of the CIS dandelions was determined from ultraviolet (UV) absorption measurements to be ∼ 1.36 eV, and this value did not show any obvious change upon varying the size of the CIS dandelions. Brunauer-Emmett-Teller (BET) measurements showed that the specific surface area of these CIS dandelion structures was 44.80 m(2) g(-1), which was more than five times higher than that of the CIS quantum dots (e.g. 8.22 m(2) g(-1)) prepared by using reported protocols. A fast photoresponsive behavior was demonstrated in a photoswitching device using the 200 nm CIS dandelions as the active materials, which suggested their possible application in optoelectronic devices.

Low-temperature synthesis of CuInSe2 nanotube array on conducting glass substrates for solar cell application

Highly ordered arrays of Cu-rich and -deficient CuInSe(2) nanotubes as well as ZnO/CuInSe(2) core/sheath nanocables have been synthesized on glass substrates by using ZnO nanorod arrays as sacrificial templates via a low-cost solution method. Chemical conversions from hexagonal ZnO to cubic ZnSe, hexagonal CuSe and tetragonal CuInSe(2) are demonstrated as a novel means for synthesis of I-III-VI nanomaterials. Large differences in their solubility product constant (K(sp)) are crucial for direct exchange in the conversions. In solvothermal reaction of ZnO/CuSe core/shell nanocables with InCl(3), the triethylene glycol solvent serves as a reducing agent for the reduction of cupric (Cu(2+)) to cuprous (Cu(+)) ions and also as an agent for the dissolution of ZnO cores. The absorption coefficient of the CuInSe(2) nanotubes in the visible region is on the order of 10(4) cm(-1). Photoelectrochemical solar cells were fabricated with arrays of ZnO/Cu(1.57±0.10)In(0.68±0.10)Se(2) and ZnO/CuSe nanocables. It was found that power conversion efficiency of the ZnO/Cu(1.57±0.10)In(0.68±0.10)Se(2) cell is about two times higher than that based on ZnO/CuSe.

Internal structure of InP/ZnS nanocrystals unraveled by high-resolution soft X-ray photoelectron spectroscopy

High-energy resolution photoelectron spectroscopy (DeltaE < 200 meV) is used to investigate the internal structure of semiconductor quantum dots containing low Z-contrast elements. In InP/ZnS core/shell nanocrystals synthesized using a single-step procedure (core and shell precursors added at the same time), a homogeneously alloyed InPZnS core structure is evidenced by quantitative analysis of their In3d(5/2) spectra recorded at variable excitation energy. When using a two-step method (core InP nanocrystal synthesis followed by subsequent ZnS shell growth), XPS analysis reveals a graded core/shell interface. We demonstrate the existence of In-S and S(x)-In-P(1-x) bonding states in both types of InP/ZnS nanocrystals, which allows a refined view on the underlying reaction mechanisms.

Three synthetic routes to single-crystalline PbS nanowires with controlled growth direction and their electrical transport properties

Single-crystalline rock-salt PbS nanowires (NWs) were synthesized using three different routes; the solvothermal, chemical vapor transport, and gas-phase substitution reaction of pregrown CdS NWs. They were uniformly grown with the [100] or [110], [112] direction in a controlled manner. In the solvothermal growth, the oriented attachment of the octylamine (OA) ligands enables the NWs to be produced with a controlled morphology and growth direction. As the concentration of OA increases, the growth direction evolves from the [100] to the higher surface-energy [110] and [112] directions under the more thermodynamically controlled growth conditions. In the synthesis involving chemical vapor transport and the substitution reaction, the use of a lower growth temperature causes the higher surface-energy growth direction to change from [100] to [110]. The high-resolution X-ray diffraction pattern and X-ray photoelectron spectroscopy results revealed that a thinner oxide-layer was produced on the surface of the PbS NWs by the substitution reaction. We fabricated field effect transistors using single PbS NW, which showed intrinsic p-type semiconductor characteristics for all three routes. For the PbS NW with a thinner oxide layer, the carrier mobility was measured to be as high as 10 cm(2) V(-1) s(-1).

Large-scale synthesis and phase transformation of CuSe, CuInSe2, and CuInSe2/CuInS2 core/shell nanowire bundles

Facile chemical approaches for the controllable synthesis of CuSe, CuInSe2 nanowire, and CuInSe2/CuInS2 core/shell nanocable bundles were developed. Hexagonal CuSe nanowire bundles with lengths up to hundreds of micrometers, consisting of many aligned nanowires with a diameter of about 10-15 nm, were prepared by reacting cubic Cu(2-x)Se nanowire bundles with a sodium citrate solution at room temperature. The CuSe nanowire bundles were then used as self-sacrificial templates for making bundles of tetragonal chalcopyrite CuInSe2 nanowires by reacting with InCl3 via a solvothermal process. Furthermore, bundles of CuInSe2/CuInS2 core/shell nanocables were obtained by adding sulfur to the reaction system, and the shell thickness of the polycrystalline CuInS2 in the nanocables increased with increasing S/Se molar ratios. It was found that the small radius of copper ions allows their fast outward diffusion from the interior to the surface of nanowires to react with sulfur atoms/anions and indium ions to form a CuInS2 shell. Enhanced optical absorption in the vis-NIR region of CuInSe2/CuInS2 core/shell nanocable bundles is demonstrated, which is considered beneficial for applications in optoelectronic devices and solar energy conversion.

Dewetting of copper nanolayers on silica in oxygen: towards preparation of copper meso/nanowires by self-organization

The present study has examined the thermal behavior of copper on silicon oxide to clarify the diffusion of copper on dielectrics in an oxygen environment. Films of copper-deposited silicon oxide were prepared on silicon wafers and then annealed in oxygen. Self-organization of copper occurred to form line structures of multiple strips in a specific oxygen pressure range. The line orientation of the produced structures was related to the line defects formed from termination of stacking faults and dislocations at the wafer surface. The line density was determined by the oxygen pressure used. The results underline a possibility of synthesizing copper meso/nanowires on dielectrics via self-organization.