Molecular Control over Semiconductor Surface Electronic Properties: Dicarboxylic Acids on CdTe, CdSe, GaAs, and InP

Engineering Mn-Doped CdS Thin Films Through Chemical Bath Deposition for High-Performance Photoelectrochemical Water Splitting

Doping conventional materials with a second element is an exciting strategy for enhancing catalytic performance via electronic structure modifications. Herein, Mn-doped CdS thin films were successfully synthesized with the aid of the chemical bath deposition (CBD) by varying the pH value (8, 10, and 12) and the surfactant amount (20, 40, 60 mg). Different morphologies like nano-cubes, nanoflakes, nano-worms, and nanosheets were obtained under different deposition conditions. The optimized Mn-doped CdS synthesized at pH=8 exhibited better photoelectrochemical (PEC) performance for oxygen evolution reaction (OER) than pure CdS films, with a maximum photocurrent density of 300 μA/cm2 at an external potential of 0.5 V, under sunlight illumination. The observed performance is attributed to the successful Mn doping, porosity, high surface area, and nanosphere morphology.

Dipolar Ligands Tune Plasmonic Properties of Tin-Doped Indium Oxide Nanocrystals

Surface functionalization with dipolar molecules is known to tune the electronic band alignment in semiconductor films and colloidal quantum dots. Yet, the influence of surface modification on plasmonic nanocrystals and their properties remains little explored. Here, we functionalize tin-doped indium oxide nanocrystals (ITO NCs) via ligand exchange with a series of cinnamic acids with different electron-withdrawing and -donating dipolar characters. Consistent with previous reports on semiconductors, we find that withdrawing (donating) ligands increase (decrease) the work function caused by an electrostatic potential shift across the molecular layer. Quantitative analyses of the plasmonic extinction spectra reveal that varying the ligand molecular dipole affects the near-surface depletion layer, with an anticorrelated trend between the electron concentration and electronic volume fraction, factors that are positively correlated in as-synthesized NCs. Electronic structure engineering through surface modification provides access to distinctive combinations of plasmonic properties that could enable optoelectronic applications, sensing, and hot electron-driven processes.

In situ-Synthesized cadmium sulfide quantum dots in pore-forming protein and polysaccharide matrices for optical biosensing applications

The main limitation for practical implementation of quantum dots-based sensors and biosensors is the possible contamination of sensing media with quantum dots (QDs) moved out from the sensor structure, being critical for living systems measurements. Numerous efforts have addressed the challenge of pre-synthesized QDs incorporation into porous matrix provide, on the one hand, proper fixation of quantum dots in its volume and preserving a free analyte transfer from the sensing media to them - on the other hand. Here, we propose an alternative insight into this problem. Instead of using preliminary synthesized particles for doping a matrix, we have in situ synthesized cadmium sulfide QDs in porous biopolymeric matrices, both in an aqueous solution and on a mica substrate. The proposed technique allows obtaining QDs in a matrix acting simultaneously as a ligand passivating surface defects and preventing QDs aggregation. The conjugates were used as a photoluminescence sensor for the metal ions and glutathione detection in an aqueous media. Different kinds of sensor responses have been found depending on the analyte nature. Zinc ions' presence initiates the intraband QDs emission increases due to the reduction of non-radiative processes. The presence of copper ions, in contrast, leads to a gradual photoluminescence decrease due to the formation of the non-luminescent copper-based alloy in the QDs structure. Finally, the presence of glutathione initiates a ligand exchange process followed by some QDs surface treatment enhancing defect-related photoluminescence. As a result, three different kinds of sensor responses for three analytes allow claiming development of a new selective QD-based sensor suitable for biomedical applications.

Near-Complete Suppression of Oxygen Evolution for Photoelectrochemical H2O Oxidative H2O2 Synthesis

Solar energy-assisted water oxidative hydrogen peroxide (H₂O₂) production on an anode combined with H₂ production on a cathode increases the value of solar water splitting, but the challenge of the dominant oxidative product, O₂, needs to be overcome. Here, we report a SnO_2-x overlayer coated BiVO₄ photoanode, which demonstrates the great ability to near-completely suppress O₂ evolution for photoelectrochemical (PEC) H₂O oxidative H₂O₂ evolution. Based on the surface hole accumulation measured by surface photovoltage, downward quasi-hole Fermi energy at the photoanode/electrolyte interface and thermodynamic Gibbs free energy between 2-electron and 4-electron competitive reactions, we are able to consider the photoinduced holes of BiVO₄ that migrate to the SnO_2-x overlayer kinetically favor H₂O₂ evolution with great selectivity by reduced band bending. The formation of H₂O₂ may be mediated by the formation of hydroxyl radicals (OH·), from 1-electron water oxidation reactions, as evidenced by spin-trapping electron paramagnetic resonance (EPR) studies conducted herein. In addition to the H₂O oxidative H₂O₂ evolution from PEC water splitting, the SnO_2-x/BiVO₄ photoanode can also inhibit H₂O₂ decomposition into O₂ under either electrocatalysis or photocatalysis conditions for continuous H₂O₂ accumulation. Overall, the SnO_2-x/BiVO₄ photoanode achieves a Faraday efficiency (FE) of over 86% for H₂O₂ generation in a wide potential region (0.6-2.1 V vs reversible hydrogen electrode (RHE)) and an H₂O₂ evolution rate averaging 0.825 μmol/min/cm² at 1.23 V vs RHE under AM 1.5 illumination, corresponding to a solar to H₂O₂ efficiency of ∼5.6%; this performance surpasses almost all previous solar energy-assisted H₂O₂ evolution performances. Because of the simultaneous production of H₂O₂ and H₂ by solar water splitting in the PEC cells, our results highlight a potentially greener and more cost-effective approach for "solar-to-fuel" conversion.

Formation of the Cd2Te2O7 phase induced by chemical etching and its influence on the electrical properties of Au/CdTe contacts

Cd₂Te₂O₇ phase was firstly discovered at the surface of CdTe after chemical etching process. Such phase is confirmed to increase the surface leakage current and optimize the ohmic contact of Au/CdTe.

Photoelectrochemical water-splitting over a surface modified p-type Cr2O3 photocathode

H₂ generation via solar photoelectrochemical water-splitting by Cr₂O₃ was successfully realized by surface modification with TiO₂ and the following Pt deposition.

Systematic modification of the indium tin oxide work function via side-chain modulation of an amino-acid functionalization layer

Controlled modification of the semiconductor surface work function is of fundamental importance for improvements in the efficiency of (opto-)electronic devices. Binding amino acids to a semiconductor surface through their common carboxylic group offers a versatile tool for modulation of surface properties by the choice of their side chain. This approach is demonstrated here by tailoring the surface work function of indium tin oxide, one of the most abundant transparent electrodes in organic optoelectronic devices. We find that the work function can be systematically tuned by the side chain of the amino acid, resulting in either an increase or a decrease of the work function, over a large range of ∼250 meV. This side chain effect is mostly due to alteration of the dipole component perpendicular to the surface, with a generally smaller contribution for changes in surface band bending. These findings also shed light on electronic interactions at the interface between proteins and semiconductors, which are of importance for future bio-electronic devices.

High-Speed Colloidal Quantum Dot Photodiodes via Accelerating Charge Separation at Metal-Oxide Interface

With ever-growing technological demands in the imaging sensor industry for autonomous driving and augmented reality, developing sensors that can satisfy not only image resolution but also the response speed becomes more challenging. Herein, the focus is on developing a high-speed photosensor capable of obtaining high-resolution, high-speed imaging with colloidal quantum dots (QDs) as the photosensitive material. In detail, high-speed QD photodiodes are demonstrated with rising and falling times of τ_r = 28.8 ± 8.34 ns and τ_f = 40 ± 9.81 ns, respectively, realized by fast separation of electron-hole pairs due to the action of internal electric field at the QD interface, mainly by the interaction between metal oxide and the QD's ligands. Such energy transfer relations are analyzed and interpreted with time-resolved photoluminescence measurements, providing physical understanding of the device and working principles.

Enhancement of the Fluorescence Quantum Yield of Thiol-Stabilized CdTe Quantum Dots Through Surface Passivation with Sodium Chloride and Bicarbonate

Colloidal quantum dots (QDs) have potential for several applications, e.g. as novel light sources; as photoluminescent probes; and for solar energy conversion devices, but their sensitivity towards their environmental surroundings, and the presence of surface defects may still degrade their emission properties. Herein, we present a post-synthetic treatment of CdTe QDs stabilized by mixed thiol ligands using chloride and bicarbonate ions to achieve near-complete surface passivation, resulting in a two-fold increase of the photoluminescence quantum yield (PL QY) and significant suppression of non-radiative recombination. Time-resolved PL measurements reveal fluorescence lifetime and PL QY trends did not both track identically; in the most favorable cases a suppression of non-radiative recombination and a slight increase in the radiative recombination rates after the salt treatment took place. The optimized conditions demonstrated here are proven to work for different sizes of CdTe QDs, and also show a dependence on the composition of the mixed ligand systems used.

Molecular and Ionic Dipole Effects on the Electronic Properties of Si-/SiO2-Grafted Alkylamine Monolayers

In this work, we demonstrate the tunability of electronic properties of Si/SiO₂ substrates by molecular and ionic surface modifications. The changes in the electronic properties such as the work function (WF) and electron affinity were experimentally measured by the contact potential difference technique and theoretically supported by density functional theory calculations. We attribute these molecular electronic effects mainly to the variations of molecular and surface dipoles of the ionic and neutral species. We have previously shown that for the alkylhalide monolayers, changing the tail group from Cl to I decreased the WF of the substrate. Here, we report on the opposite trend of WF changes, that is, the increase of the WF, obtained by using the anions of these halides from Cl^- to I^-. This trend was observed on self-assembled alkylammonium halide (-NH₃⁺ X^-, where X^- = Cl^-, Br^-, or I^-) monolayer-modified substrates. The monolayer's formation was supported by ellipsometry measurements, X-ray photoelectron spectroscopy, and atomic force microscopy. Comparison of the theoretical and experimental data suggests that the ionic surface dipole depends mainly on the polarizability and the position of the counter halide anion along with the organization and packaging of the layer. The described ionic modification can be easily used for facile tailoring and design of the electronic properties Si/SiO₂ substrates for various device applications.

Chemical Modification of Semiconductor Surfaces for Molecular Electronics

Inserting molecular monolayers within metal/semiconductor interfaces provides one of the most powerful expressions of how minute chemical modifications can affect electronic devices. This topic also has direct importance for technology as it can help improve the efficiency of a variety of electronic devices such as solar cells, LEDs, sensors, and possible future bioelectronic ones. The review covers the main aspects of using chemistry to control the various aspects of interface electrostatics, such as passivation of interface states and alignment of energy levels by intrinsic molecular polarization, as well as charge rearrangement with the adjacent metal and semiconducting contacts. One of the greatest merits of molecular monolayers is their capability to form excellent thin dielectrics, yielding rich and unique current-voltage characteristics for transport across metal/molecular monolayer/semiconductor interfaces. We explain the interplay between the monolayer as tunneling barrier on the one hand, and the electrostatic barrier within the semiconductor, due to its space-charge region, on the other hand, as well as how different monolayer chemistries control each of these barriers. Practical tools to experimentally identify these two barriers and distinguish between them are given, followed by a short look to the future. This review is accompanied by another one, concerning the formation of large-area molecular junctions and charge transport that is dominated solely by molecules.

Effect of Chloride Passivation on Recombination Dynamics in CdTe Colloidal Quantum Dots

Colloidal quantum dots (CQDs) can be used in conjunction with organic charge-transporting layers to produce light-emitting diodes, solar cells and other devices. The efficacy of CQDs in these applications is reduced by the non-radiative recombination associated with surface traps. Here we investigate the effect on the recombination dynamics in CdTe CQDs of the passivation of these surface traps by chloride ions. Radiative recombination dominates in these passivated CQDs, with the radiative lifetime scaling linearly with CQD volume over τ_r=20–55 ns. Before chloride passivation or after exposure to air, two non-radiative components are also observed in the recombination transients, with sample-dependent lifetimes typically of less than 1 ns and a few ns. The non-radiative dynamics can be explained by Auger-mediated trapping of holes and the lifetimes of this process calculated by an atomistic model are in agreement with experimental values if assuming surface oxidation of the CQDs.

Photochromism-induced amplification of critical current density in superconducting boron-doped diamond with an azobenzene molecular layer

A key issue in molecular electronics is the control of electronic states by optical stimuli, which enables fast and high-density data storage and temporal-spatial control over molecular processes. In this article, we report preparation of a photoswitchable superconductor using a heavily boron-doped diamond (BDD) with a photochromic azobenzene (AZ) molecular layer. BDDs electrode properties allow for electrochemical immobilization, followed by copper(I)-catalyzed alkyne-azide cycloaddition (a "click" reaction). Superconducting properties were examined with magnetic and electrical transport measurements, such as field-dependent isothermal magnetization, temperature-dependent resistance, and the low-temperature voltage-current response. These measurements revealed reversible amplification of the critical current density by 55% upon photoisomerization. This effect is explained as the reversible photoisomerization of AZ inducing an inhomogeneous electron distribution along the BDD surface that renormalizes the surface pinning contribution to the critical current.

A study of optical absorption of cysteine-capped CdSe nanoclusters using first-principles calculations

Optical absorption of cysteine-capped CdSe nanoclusters varies with cluster size, ligands and solvents.

Surface modification of semiconductor photoelectrodes

An overview of surface engineering approaches to enhance the photoelectrochemical performance of commmon semiconductor photoelectrodes for solar energy conversion.

Improved Exciton Dissociation at Semiconducting Polymer:ZnO Donor:Acceptor Interfaces via Nitrogen Doping of ZnO

Exciton dissociation at the zinc oxide/poly(3-hexylthiophene) (ZnO/P3HT) interface as a function of nitrogen doping of the zinc oxide, which decreases the electron concentration from approximately 10¹⁹ cm^-3 to 10¹⁷ cm^-3, is reported. Exciton dissociation and device photocurrent are strongly improved with nitrogen doping. This improved dissociation of excitons in the conjugated polymer is found to result from enhanced light-induced de-trapping of electrons from the surface of the nitrogen-doped ZnO. The ability to improve the surface properties of ZnO by introducing a simple nitrogen dopant has general applicability.

Up-converted fluorescence emission under linear common spectrofluorometer from PAMAM pyridine derivatives and with QDs nanoparticles

Organic pyridine PAMAM dendrimers and added QDs nanoparticles realized up-converted fluorescence emission under a 800 nm linear light-source using a common spectrofluorometer.

High selectivity up-converted fluorescence turn-on probe for Zn2+based on PAMAM hydroxy-naphthalene Schiff-bases (CN) half-organic quantum dots

Dendrimer PNS-G0 realizes an (up-converted) fluorescence turn-on effect to qualitatively and quantitatively detect Zn²⁺based on CN_Zn_O half-organic quantum dots (HOQDs).

An exceptional artificial photocatalyst, Nih -CdSe/CdS core/shell hybrid, made in situ from CdSe quantum dots and nickel salts for efficient hydrogen evolution

A novel hybrid Nih -CdSe/CdS core/shell quantum dot is a simple and exceptional artificial photocatalyst for H2 production from 2-propanol aqueous solution. Studies on the nature of the artificial photocatalyst and mechanism for H2 production demonstrate that the synthetic strategy is general and the artificial photocatalyst holds promise for light capture, electron transfer, and catalysis at the surface of the Nih -CdSe/CdS core/shell quantum dots, leading to a self-healing system for H2 evolution in harmony.

Photo-induced dipoles: a new method to convert photons into photovoltage in quantum dot sensitized solar cells

A high photovoltage is an essential ingredient for the construction of a high-efficiency quantum dot sensitized solar cell (QDSSC). In this paper we present a novel configuration of QDSSC which incorporates the photoinduced dipole (PID) phenomenon for improved open circuit voltage (Voc). This configuration, unlike previously studied ones with molecular dipoles, is based on a dipole moment which is created only under illumination and is a result of exciton dissociation. The generation of photodipoles was achieved by the creation of long-lived trapped holes inside a core of type-II ZnSe/CdS colloidal core/shell QDs, which are placed on top of the standard CdS QD sensitizer layer. Upon photoexcitation, the created photodipole negatively shifts the TiO2 energy bands, resulting in a photovoltage that is higher by ∼100 mV compared to the standard cell, without type-II QDs. The extra photovoltage gained diminishes the excessive overpotential losses caused by the energetic difference between the CdS sensitizer layer and the TiO2, without harming the charge injection processes. Moreover, we show that the extent of the additional photovoltage is controlled by the illumination intensity. This work provides new understanding regarding the operation mechanisms of photoelectrochemical cells, while presenting a new strategy for constructing a high-voltage QDSSCs. In addition, the PID effect has the potential to be implemented in other promising photovoltaic technologies.

Enhanced performance in inverted polymer solar cells with D-π-A-type molecular dye incorporated on ZnO buffer layer

We report the superior characteristics of a ZnO buffer layer covered with a phenothiazine-based, π-conjugated donor-acceptor (D-π-A)-type organic dye (called "d-ZnO"). The use of this system for the performance enhancement of inverted bulk heterojunction polymer solar cells (PSCs) with the configuration of indium tin oxide/d-ZnO/polymer:PC71 BM/MoO3 /Ag (PC71 BM=[6,6]-phenyl C71 butyric acid methyl ester) is investigated. The layer of organic dyes anchored on the ZnO surface through carboxylate bonding reduces the shunt path on bare ZnO surface and provides better interfacial contacts and energy level alignments between the ZnO layer and the photoactive layer. This phenomenon consequently leads to highly enhanced photovoltaic parameters (fill factor, open-circuit voltage, and short-circuit current density) and power conversion efficiencies (PCEs). Inverted solar cells containing the d-ZnO layer not only revealed about 34% (PCE: 4.37%) and 18% (PCE: 7.11%) improvement in the PCEs of the representative poly-3(hexylthiophene) (P3HT) and low-band-gap poly{[4,8-bis-(2-ethyl-hexyl-thiophene-5-yl)-benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-alt-[2-(2'-ethylhexanoyl)-thieno[3,4-b]thiophen-4,6-diyl]} (PBDTTT-C-T) polymer systems, respectively, but also showed 2-4 times longer device lifetimes than their counterparts without the organic dye layer. These results demonstrate that this simple approach used in inverted PSCs with a metal oxide buffer layer could become a promising procedure to fabricate highly efficient and stable PSCs.

Solvent dipole modulation of conduction band edge shift and charge recombination in robust dye-sensitized solar cells

Molecular modification is certified as a powerful strategy to adjust the energy alignment and electron transfer dynamics of dye-sensitized solar cells (DSCs). Herein, devices are assembled with three robust solvent (3-methoxypropionitrile, N,N-dimethylformamide and γ-butyrolactone) based electrolytes to elucidate the solvent dipole effects at the semiconductor-dye-electrolyte interface. Photovoltaic results demonstrate that open-circuit photovoltages of the devices vary linearly with the dipole moment of the solvents, along with an adverse dependence of the short-circuit photocurrent density under simulated irradiation. Impedance analysis reveals an apparent dipole moment-modulated conduction band edge shift of the nanocrystalline TiO(2) electrodes with respect to the redox potential of the electrolyte. Furthermore, the adverse shifts of the short-circuit photocurrent are explained by a dipole dependence of the driving force for electron injection and the interfacial charge recombination, together with a notably changed charge collection efficiency. Therefore, this study draws attention to the feasibility of tuning the electron transfer dynamics and energy alignment in photoelectrochemical devices by judiciously selecting the electrolyte solvents for further efficiency improvement, especially for those alternative organic sensitizers or quantum dots with inadequate electron injection driven forces.

Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer

The ultrafast charge carrier dynamics in GaAs/conjugated polymer type II heterojunctions are investigated using time-resolved photoluminescence spectroscopy at 10 K. By probing the photoluminescence at the band edge of GaAs, we observe strong carrier lifetime enhancement for nanowires blended with semiconducting polymers. The enhancement is found to depend crucially on the ionization potential of the polymers with respect to the Fermi energy level at the surface of the GaAs nanowires. We attribute these effects to electron doping by the polymer which reduces the unsaturated surface-state density in GaAs. We find that when the surface of nanowires is terminated by native oxide, the electron injection across the interface is greatly reduced and such surface doping is absent. Our results suggest that surface engineering via π-conjugated polymers can substantially improve the carrier lifetime in nanowire hybrid heterojunctions with applications in photovoltaics and nanoscale photodetectors.

Interface engineering: Boosting the energy conversion efficiencies for nanostructured solar cells

Nanostructured solar cells have attracted increasing attention in recent years because their low cost and ease of preparation offer unique advantages and opportunities unavailable with conventional single-crystalline solar cells. The efficiencies of this kind of solar cell largely depend on the interfacial structure owing to the large specific interface areas and the inherent high density of interface states. In this review article, strategies of interface engineering will be introduced in detail. The up-to-date progress and understanding of interface engineering and its role in influencing the efficiency of nanostructured solar cells will be discussed. Some of the representative examples of the interface engineering method will be presented wherever necessary. Continued boosting of the energy conversion efficiency for nanostructured solar cells is anticipated in the coming years and will bring this kind of solar cell to the status of commercialization.

Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence

Crystalline gallium arsenide (GaAs) (111)A and gallium nitride (GaN) (0001) surfaces have been functionalized with alkyl groups via a sequential wet chemical chlorine activation, Grignard reaction process. For GaAs(111)A, etching in HCl in diethyl ether effected both oxide removal and surface-bound Cl. X-ray photoelectron (XP) spectra demonstrated selective surface chlorination after exposure to 2 M HCl in diethyl ether for freshly etched GaAs(111)A but not GaAs(111)B surfaces. GaN(0001) surfaces exposed to PCl(5) in chlorobenzene showed reproducible XP spectroscopic evidence for Cl-termination. The Cl-activated GaAs(111)A and GaN(0001) surfaces were both reactive toward alkyl Grignard reagents, with pronounced decreases in detectable Cl signal as measured by XP spectroscopy. Sessile contact angle measurements between water and GaAs(111)A interfaces after various levels of treatment showed that GaAs(111)A surfaces became significantly more hydrophobic following reaction with C(n)H(2n-1)MgCl (n = 1, 2, 4, 8, 14, 18). High-resolution As 3d XP spectra taken at various times during prolonged direct exposure to ambient lab air indicated that the resistance of GaAs(111)A to surface oxidation was greatly enhanced after reaction with Grignard reagents. GaAs(111)A surfaces terminated with C(18)H(37) groups were also used in Schottky heterojunctions with Hg. These heterojunctions exhibited better stability over repeated cycling than heterojunctions based on GaAs(111)A modified with C(18)H(37)S groups. Raman spectra were separately collected that suggested electronic passivation by surficial Ga-C bonds at GaAs(111)A. Specifically, GaAs(111)A surfaces reacted with alkyl Grignard reagents exhibited Raman signatures comparable to those of samples treated with 10% Na(2)S in tert-butanol. For GaN(0001), high-resolution C 1s spectra exhibited the characteristic low binding energy shoulder demonstrative of surface Ga-C bonds following reaction with CH(3)MgCl. In addition, 4-fluorophenyl groups were attached and detected after reaction with C(6)H(4)FMgBr, further confirming the susceptibility of Cl-terminated GaN(0001) to surface alkylation. However, the measured hydrophobicities of alkyl-terminated GaAs(111)A and GaN(0001) were markedly distinct, indicating differences in the resultant surface layers. The results presented here, in conjunction with previous studies on GaP, show that atop Ga atoms at these crystallographically related surfaces can be deliberately functionalized and protected through Ga-C surface bonds that do not involve thiol/sulfide chemistry or gas-phase pretreatments.

Gold-nanoparticle-functionalized In₂O₃ nanowires as CO gas sensors with a significant enhancement in response

We present the room-temperature sensing of gold nanoparticle (AuNP)-functionalized In(2)O(3) nanowire field-effect transistor (NW-FET) for low-concentration CO gas. AuNPs were functionalized onto In(2)O(3) nanowires via a self-assembled monolayer of p-aminophenyltrimethoxysilane (APhS-SAM). The nanowires were mounted onto the Au electrodes with both ends in Schottky contacts. High sensor response toward low concentration of CO gas (200 ppb-5 ppm) at room temperature is achieved. The presence of AuNPs on the surface of In(2)O(3) nanowire serves to enhance the CO oxidation due to a higher oxygen ion-chemisorption on the conductive AuNP surfaces. Detailed studies showed that the sensing capabilities were greatly enhanced in comparison to those of bare nanowires or low coverage of Au NP-decorated nanowires. When the sensor is exposed to CO, the CO molecules interact with the preadsorbed oxygen ions on the AuNP surface. The CO oxidation on the AuNPs leads to the transfer of electrons into the semiconducting In(2)O(3) nanowires and this is reflected as the change in conductance of the NW-FET sensor. This work provides a promising approach for fabricating nanowire devices with excellent sensing capabilities at room temperature.

Electrical performance of silicon-on-insulator field-effect transistors with multiple top-gate organic layers in electrolyte solution

The utilization of field-effect transistor (FET) devices in biosensing applications have been extensively studied in recent years. Qualitative and quantitative understanding of the contribution of the organic layers constructed on the device gate, and the electrolyte media, on the behavior of the device is thus crucial. In this work we analyze the contribution of different organic layers on the pH sensitivity, threshold voltage, and gain of a silicon-on-insulator based FET device. We further monitor how these properties change as function of the electrolyte screening length. Our results show that in addition to electrostatic effects, changes in the amphoteric nature of the surface also affect the device threshold voltage. These effects were found to be additive for the first (3-aminopropyl)trimethoxysilane linker layer and second biotin receptor layer. For the top streptavidin protein layer, these two effects cancel each other. The number and nature of amphoteric groups on the surface, which changes upon the formation of the layers, was shown also to affect the pH sensitivity of the device. The pH sensitivity reduces with the construction of the first two layers. However, after the formation of the streptavidin protein layer, the protein's multiple charged side chains induce an increase in the sensitivity at low ionic strengths. Furthermore, the organic layers were found to influence the device gain due to their dielectric properties, reducing the gain with the successive construction of each layer. These results demonstrate the multilevel influence of organic layers on the behavior of the FET devices.

The effect of nonideal polar monolayers on molecular gated transistors

Nonideal polar monolayers can induce a field-effect in molecular gated transistors. To quantify the magnitude of this phenomenon, we have calculated the effect of roughness and noncontinuity of such layers on the operation of hybrid silicon-on-insulator field-effect transistors. The results show that under most practical conditions, the nonideality of polar monolayers induces very small electric fields in the underlying transistor channel, and consequently a negligible gating effect.

The molecularly controlled semiconductor resistor: how does it work?

We examine the current response of molecularly controlled semiconductor devices to the presence of weakly interacting analytes. We evaluate the response of two types of devices, a silicon oxide coated silicon device and a GaAs/AlGaAs device, both coated with aliphatic chains and exposed to the same set of analytes. By comparing the device electrical response with contact potential difference and surface photovoltage measurements, we show that there are two mechanisms that may affect the underlying substrate, namely, formation of layers with a net dipolar moment and molecular interaction with surface states. We find that whereas the Si device response is mostly correlated to the analyte dipole, the GaAs device response is mostly correlated to interactions with surface states. Existence of a silicon oxide layer, whether native on the Si or deliberately grown on the GaAs, eliminates analyte interaction with the surface states.