1
|
Liang Y, Zhao L, Li C, Du J, Shang Q, Wei Z, Zhang Q. Strong Exciton-Exciton Scattering of Exfoliated van der Waals InSe toward Efficient Continuous-Wave Near-Infrared P-Band Emission. NANO LETTERS 2023; 23:4058-4065. [PMID: 37083440 DOI: 10.1021/acs.nanolett.3c00932] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
P-band emission is a superlinear low-coherence emission through exciton-exciton (X-X) scattering into photon-like states. It occurs without the prerequisites of population inversion or macroscopical coherence, rendering lower power consumption than the widely explored superlinear low-coherence emissions including superfluorescence, amplified spontaneous emission, and random lasing, and holds great potential for speckle-free imaging and interferometric sensing. However, competition processes including exciton dissociation and annihilation undermine its operation at room temperature and/or low excitation conditions. Here we report room-temperature P-band emission from InSe microflakes with excitation density of 1010 cm-2, offering 2-orders-of-magnitude lower operation density compared to the state-of-the-art superlinear low-coherence emissions. The efficient P-band emission is attributed to a large X-X scattering strength of 0.25 μeV μm2 due to enhanced spatial confinement along with intrinsic material metrics of 3D/2D exciton complex and asymmetric electron/hole mass. These findings open an avenue toward strong low-coherence near-infrared light sources based on van der Waals semiconductors.
Collapse
Affiliation(s)
- Yin Liang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Chun Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jiaxing Du
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Qiuyu Shang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| |
Collapse
|
2
|
Ryu H, Park J, Nam SH, Park JW, Kim K, Yi Y, Jang JI. Observation of 3D Biexcitons in Pristine-Quality CH 3 NH 3 PbBr 3 Single Crystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107882. [PMID: 35040202 DOI: 10.1002/adma.202107882] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2021] [Revised: 01/14/2022] [Indexed: 06/14/2023]
Abstract
Halide perovskites (HPs) are fascinating materials whose optoelectronic properties are arguably excitonic. In the HP family, biexcitons are known to exist only in low dimensions where exciton-exciton binding is strongly enhanced by quantum and dielectric confinements. In this paper, however, it is shown that they indeed do exist in 3D bulk CH3 NH3 PbBr3 (MAPbBr3 ) single crystals if the pristine crystal quality is ensured for subtle binding of two excitons. The existence of biexcitons is clearly evidenced below 30 K with a binding energy of ≈3.9 ± 0.3 meV according to i) exciton-biexciton population dynamics, ii) giant resonant two-photon excitation of biexcitons, iii) inverted Boltzmann-type spectral feature, and iv) zero degree of circular polarization in the biexciton photoluminescence. Because of the polariton effect, the two-photon resonance occurs at the excited biexciton state from which longitudinal-transverse splitting is calculated to be 3.7 meV. The discovery of the 3D biexcitons underscores the very quality of HP crystals for generating various many-body excitonic phases in MAPbBr3 and its analogues toward the improved understanding of their fundamental properties and highly efficient optoelectronic applications.
Collapse
Affiliation(s)
- Hongsun Ryu
- Department of Physics, Sogang University, Seoul, 04107, South Korea
| | - Jeehong Park
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul, 03722, South Korea
| | - Seo Hyun Nam
- Department of Physics, Sogang University, Seoul, 04107, South Korea
| | - Joon Woo Park
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul, 03722, South Korea
| | - Kitae Kim
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul, 03722, South Korea
| | - Yeonjin Yi
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul, 03722, South Korea
| | - Joon I Jang
- Department of Physics, Sogang University, Seoul, 04107, South Korea
| |
Collapse
|
3
|
Polishchuk S, Puppin M, Crepaldi A, Gatti G, Dirin DN, Nazarenko O, Colonna N, Marzari N, Kovalenko MV, Grioni M, Chergui M. Nanoscale-Resolved Surface-to-Bulk Electron Transport in CsPbBr 3 Perovskite. NANO LETTERS 2022; 22:1067-1074. [PMID: 35044784 PMCID: PMC8832496 DOI: 10.1021/acs.nanolett.1c03941] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Revised: 01/02/2022] [Indexed: 06/14/2023]
Abstract
Describing the nanoscale charge carrier transport at surfaces and interfaces is fundamental for designing high-performance optoelectronic devices. To achieve this, we employ time- and angle-resolved photoelectron spectroscopy with ultraviolet pump and extreme ultraviolet probe pulses. The resulting high surface sensitivity reveals an ultrafast carrier population decay associated with surface-to-bulk transport, which was tracked with a sub-nanometer spatial resolution normal to the surface, and on a femtosecond time scale, in the case of the inorganic CsPbBr3 lead halide perovskite. The decay time exhibits a pronounced carrier density dependence, which is attributed via modeling to enhanced diffusive transport and concurrent recombination. The transport is found to approach an ordinary diffusive regime, limited by electron-hole scattering, at the highest excitation fluences. This approach constitutes an important milestone in our capability to probe hot-carrier transport at solid interfaces with sub-nanometer resolution in a theoretically and experimentally challenging, yet technologically relevant, high-carrier-density regime.
Collapse
Affiliation(s)
- Serhii Polishchuk
- Laboratoire
de Spectroscopie Ultrarapide (LSU) and Lausanne Centre for Ultrafast
Science (LACUS), École Polytechnique
Fédérale de Lausanne, ISIC, 1015 Lausanne, Switzerland
| | - Michele Puppin
- Laboratoire
de Spectroscopie Ultrarapide (LSU) and Lausanne Centre for Ultrafast
Science (LACUS), École Polytechnique
Fédérale de Lausanne, ISIC, 1015 Lausanne, Switzerland
| | - Alberto Crepaldi
- Institute
of Physics and Lausanne Centre for Ultrafast Science (LACUS), École Polytechnique Fédérale
de Lausanne, 1015 Lausanne, Switzerland
- Dipartimento
di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milan 20133, Italy
| | - Gianmarco Gatti
- Institute
of Physics and Lausanne Centre for Ultrafast Science (LACUS), École Polytechnique Fédérale
de Lausanne, 1015 Lausanne, Switzerland
| | - Dmitry N. Dirin
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir-Prelog Weg 1, 8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, EMPA−Swiss
Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland
| | - Olga Nazarenko
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir-Prelog Weg 1, 8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, EMPA−Swiss
Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland
| | - Nicola Colonna
- Laboratory
for Neutron Scattering and Imaging, Paul
Scherrer Institute, 5232 Villigen-PSI, Switzerland
- National
Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale
de Lausanne, 1015 Lausanne, Switzerland
| | - Nicola Marzari
- National
Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale
de Lausanne, 1015 Lausanne, Switzerland
| | - Maksym V. Kovalenko
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir-Prelog Weg 1, 8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, EMPA−Swiss
Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland
| | - Marco Grioni
- Institute
of Physics and Lausanne Centre for Ultrafast Science (LACUS), École Polytechnique Fédérale
de Lausanne, 1015 Lausanne, Switzerland
| | - Majed Chergui
- Laboratoire
de Spectroscopie Ultrarapide (LSU) and Lausanne Centre for Ultrafast
Science (LACUS), École Polytechnique
Fédérale de Lausanne, ISIC, 1015 Lausanne, Switzerland
| |
Collapse
|
4
|
Ray A, Martín-García B, Moliterni A, Casati N, Boopathi KM, Spirito D, Goldoni L, Prato M, Giacobbe C, Giannini C, Di Stasio F, Krahne R, Manna L, Abdelhady AL. Mixed Dimethylammonium/Methylammonium Lead Halide Perovskite Crystals for Improved Structural Stability and Enhanced Photodetection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106160. [PMID: 34856033 DOI: 10.1002/adma.202106160] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Revised: 11/24/2021] [Indexed: 06/13/2023]
Abstract
The solvent acidolysis crystallization technique is utilized to grow mixed dimethylammonium/methylammonium lead tribromide (DMA/MAPbBr3 ) crystals reaching the highest dimethylammonium incorporation of 44% while maintaining the 3D cubic perovskite phase. These mixed perovskite crystals show suppression of the orthorhombic phase and a lower tetragonal-to-cubic phase-transition temperature compared to MAPbBr3 . A distinct behavior is observed in the temperature-dependent photoluminescence properties of MAPbBr3 and mixed DMA/MAPbBr3 crystals due to the different organic cation dynamics governing the phase transition(s). Furthermore, lateral photodetectors based on these crystals show that, at room temperature, the mixed crystals possess higher detectivity compared to MAPbBr3 crystals caused by structural compression and reduced surface trap density. Remarkably, the mixed-crystal devices exhibit large enhancement in their detectivity below the phase-transition temperature (at 200 K), while for the MAPbBr3 devices only insignificant changes are observed. The high detectivity of the mixed crystals makes them attractive for visible-light communication and for space applications. The results highlight the importance of the synthetic technique for compositional engineering of halide perovskites that governs their structural and optoelectronic properties.
Collapse
Affiliation(s)
- Aniruddha Ray
- Istituto Italiano di Tecnologia, Via Morego 30, Genoa, 16163, Italy
- Dipartimento di Chimica e Chimica Industriale, Università degli Studi di Genova, Via Dodecaneso 31, Genoa, 16146, Italy
| | - Beatriz Martín-García
- Istituto Italiano di Tecnologia, Via Morego 30, Genoa, 16163, Italy
- CIC nanoGUNE, Tolosa Hiribidea, 76, Donostia-San Sebastian, 20018, Spain
| | - Anna Moliterni
- Istituto di Cristallografia, Consiglio Nazionale delle Ricerche, Via Amendola 122/O, Bari, 70126, Italy
| | - Nicola Casati
- Laboratory for Synchrotron Radiation-Condensed Matter, Paul Scherrer Institut, Villigen, 5232, Switzerland
| | | | - Davide Spirito
- IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder), D-15236, Germany
| | - Luca Goldoni
- Istituto Italiano di Tecnologia, Via Morego 30, Genoa, 16163, Italy
| | - Mirko Prato
- Istituto Italiano di Tecnologia, Via Morego 30, Genoa, 16163, Italy
| | - Carlotta Giacobbe
- European Synchrotron Radiation Facility, 71 Avenue Des Martyrs, Grenoble, 38040, France
| | - Cinzia Giannini
- Istituto di Cristallografia, Consiglio Nazionale delle Ricerche, Via Amendola 122/O, Bari, 70126, Italy
| | | | - Roman Krahne
- Istituto Italiano di Tecnologia, Via Morego 30, Genoa, 16163, Italy
| | - Liberato Manna
- Istituto Italiano di Tecnologia, Via Morego 30, Genoa, 16163, Italy
| | - Ahmed L Abdelhady
- Istituto Italiano di Tecnologia, Via Morego 30, Genoa, 16163, Italy
- ŁUKASIEWICZ Research Network PORT-Polish Center for Technology Development, ul. Stabłowicka 147, Wrocław, 54066, Poland
| |
Collapse
|
5
|
Li C, Zhao L, Shang Q, Wang R, Bai P, Zhang J, Gao Y, Cao Q, Wei Z, Zhang Q. Room-temperature Near-infrared Excitonic Lasing from Mechanically Exfoliated InSe Microflake. ACS NANO 2022; 16:1477-1485. [PMID: 34928140 DOI: 10.1021/acsnano.1c09844] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The development of chip-level near-infrared laser sources using two-dimensional semiconductors is imperative to maintain the architecture of van der Waals integrated optical interconnections. However, the established two-dimensional semiconductor lasers may have either the disadvantages of poor controllability of monolayered gain media, large optical losses on silicon, or complicated fabrication of external optical microcavities. This study demonstrates room-temperature near-infrared lasing from mechanically exfoliated γ-phase indium selenide (InSe) microflakes free from external optical microcavities at a center wavelength of ∼1030 nm. The lasing action occurs at the sub-Mott density level and is generated by exciton-exciton scattering with a high net modal optical gain of ∼1029 cm-1. Moreover, the lasing is sustained for microdisks fabricated by a simple laser printing with a reduced threshold. These results suggest that InSe is a promising material for near-infrared microlasers and can be employed in a wide range of applications, including imaging, sensing, and optical interconnects.
Collapse
Affiliation(s)
- Chun Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Qiuyu Shang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Ruonan Wang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Peng Bai
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Yunan Gao
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Qiang Cao
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| |
Collapse
|
6
|
Enomoto S, Tagami T, Ueda Y, Moriyama Y, Fujiwara K, Takahashi S, Yamashita K. Drastic transitions of excited state and coupling regime in all-inorganic perovskite microcavities characterized by exciton/plasmon hybrid natures. LIGHT, SCIENCE & APPLICATIONS 2022; 11:8. [PMID: 34974529 PMCID: PMC8720309 DOI: 10.1038/s41377-021-00701-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2021] [Revised: 11/28/2021] [Accepted: 12/19/2021] [Indexed: 05/09/2023]
Abstract
Lead-halide perovskites are highly promising for various optoelectronic applications, including laser devices. However, fundamental photophysics explaining the coherent-light emission from this material system is so intricate and often the subject of debate. Here, we systematically investigate photoluminescence properties of all-inorganic perovskite microcavity at room temperature and discuss the excited state and the light-matter coupling regime depending on excitation density. Angle-resolved photoluminescence clearly exhibits that the microcavity system shows a transition from weak coupling regime to strong coupling regime, revealing the increase in correlated electron-hole pairs. With pumping fluence above the threshold, the photoluminescence signal shows a lasing behavior with bosonic condensation characteristics, accompanied by long-range phase coherence. The excitation density required for the lasing behavior, however, is found to exceed the Mott density, excluding the exciton as the excited state. These results demonstrate that the polaritonic Bardeen-Cooper-Schrieffer state originates the strong coupling formation and the lasing behavior.
Collapse
Affiliation(s)
- Shuki Enomoto
- Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan
| | - Tomoya Tagami
- Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan
| | - Yusuke Ueda
- Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan
| | - Yuta Moriyama
- Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan
| | - Kentaro Fujiwara
- Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan
| | - Shun Takahashi
- Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan
| | - Kenichi Yamashita
- Faculty of Electrical Engineering and Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto, 606-8585, Japan.
| |
Collapse
|