Superconductivity in the Narrow Gap Semiconductor RbBi11/3Te6

Low thermal conductivity in a new mixed metal telluride Mn1.8(1)In0.8(1)Si2Te6

The design of new complex mixed metal tellurides (containing low toxicity cations) with intrinsic ultralow thermal conductivity is of paramount importance in the field of thermoelectrics. Herein, we report the synthesis and characterization of polycrystalline and single crystals of a new mixed-metal quaternary telluride Mn1.8(1)In0.8(1)Si2Te6. The structural aspects and chemical formula of this phase at room temperature have been established using single crystal X-ray diffraction and EDX studies. The trigonal centrosymmetric (space group: P3̄1m) structure of the title phase has cell constants of a = b = 7.0483(7) Å and c = 7.1277(8) Å. The structure has three independent cationic sites, one mixed (In1/Mn1), one partially filled Mn2, and one Si1, which are bonded with Te1 atoms. Each metal atom (In and Mn) in the structure is octahedrally coordinated with six neighboring Te1 atoms. The structure also features dimers of Si atoms, and each Si atom is bonded to three Te1 atoms to form ethane-like Si2Te6 units. The optical absorption study of a polycrystalline Mn1.8In0.8Si2Te6 sample shows a narrow optical bandgap of 0.6(2) eV. Temperature-dependent resistivity and Seebeck coefficient studies confirmed the p-type semiconducting nature of the sample with high values of S (301 μV K-1 to 444 μV K-1). The total thermal conductivity (ktot) study of the polycrystalline sample shows a decreasing trend on heating with an extremely low value of 0.28 W m-1 K-1 at 773 K. Magnetic measurements indicate a glassy magnetic behavior for the sample below 8 K.

A novel bifunctional thioarsenate based on unprecedented molecular [Cd4As8Se16(Se2)2]8- cluster anions

Exploring and developing new functional inorganic chalcogenides with unique structures is always one of the most important missions in solid-state chemistry, especially those with molecular structures. Herein, a novel quaternary thioarsenate, Cs2CdAsSe5, is found to be based on an unprecedented molecular (poly)chalcogenide cluster architecture, which has never been discovered in inorganic chalcogenide systems. This rare windmill-like [Cd4As8Se16(Se2)2]8- cluster is made of four [CdSe4] and [As(V)Se4] tetrahedra via corner-sharing Se atoms and Se-Se bonds. Specifically, Cs2CdAsSe5 exhibits a remarkable photocurrent response and a large computationally predicted birefringence, and the origin of the optoelectronic performance and optical anisotropy is confirmed by detailed theoretical investigation.

Cs3CuAs4Q8 (Q = S, Se): unique two-dimensional layered inorganic thioarsenates with the lowest Cu-to-As ratio and remarkable photocurrent responses

Inorganic chalcogenides containing cations with lone-pair electrons have attracted considerable attention because of their potential applications in photocatalysis. In this research, two new copper thioarsenates with the lowest Cu-to-As ratio in the quaternary X/Cu/As/Q (X = inorganic cations; Q = chalcogen) system, namely Cs₃CuAs₄Q₈ (Q = S, Se), were obtained by a simple surfactant-thermal method at a low temperature. These two isostructural compounds belong to the monoclinic space group C2/c (no. 15) and are composed charge-balanced Cs⁺ cations and two-dimensional anionic [CuAs₄Q₈]^3- layers. Notably, photo-electrochemical measurements indicate that Cs₃CuAs₄Q₈ possesses a remarkable photocurrent response under simulated solar-light illumination. Further theoretical studies were performed to gain insights into the relationships between electronic structure and optical properties.

Modeling the ternary chalcogenide Na2MoSe4 from first-principles

In the ongoing pursuit of inorganic compounds suitable for solid-state devices, transition metal chalcogenides have received heightened attention due to their physical and chemical properties. Recently, alkali-ion transition metal chalcogenides have been explored as promising candidates to be applied in optoelectronics, photovoltaics and energy storage devices. In this work, we present a theoretical study of sodium molybdenum selenide (Na₂MoSe₄). First-principles computations were performed on a set of hypothetical crystal structures to determine the ground state and electronic properties of Na₂MoSe₄. We find that the equilibrium structure of Na₂MoSe₄ is a simple orthorhombic (oP) lattice, with space group Pnma, as evidenced by thermodynamics. Finally, meta-GGA computations were performed to model the band structure of oP Na₂MoSe₄ at a predictive level. We employ the Tran-Blaha modified Becke-Johnson potential to demonstrate that oP Na₂MoSe₄ has a direct bandgap at the Γ point that is suitable for optoelectronics. Our results provide a foundation for future studies concerned with the modeling of inorganic and hybrid organic-inorganic materials chemically analogous to Na₂MoSe₄.

Change in the electronic structure of the bismuth chalcogenide superconductor CsBi4-x Pb x Te6 by dissociation of the bismuth dimers

CsBi_4-x Pb _x Te₆ is synthesized and the superconductivity associated with the structural transition from Pb substitution is studied. Photoemission spectroscopy measurements are performed in order to elucidate the relationship between the electronic structure and the occurrence of the superconductivity. When Bi is substituted with Pb, an electron doping-like change in the electronic structure is directly observed which is contrary to the naive expectation of hole doping. This observation is consistent with band structure calculations and appears to be a unique characteristic of CsBi_4-x Pb _x Te₆ because of the dissociation of Bi dimers upon Pb substitution. These results indicate that it may be possible to control the electron and hole doping via manipulating the Bi dimers through Pb substitution.

Fiber-Based Energy Conversion Devices for Human-Body Energy Harvesting

Following the rapid development of lightweight and flexible smart electronic products, providing energy for these electronics has become a hot research topic. The human body produces considerable mechanical and thermal energy during daily activities, which could be used to power most wearable electronics. In this context, fiber-based energy conversion devices (FBECD) are proposed as candidates for effective conversion of human-body energy into electricity for powering wearable electronics. Herein, functional materials, fiber fabrication techniques, and device design strategies for different classes of FBECD based on piezoelectricity, triboelectricity, electrostaticity, and thermoelectricity are comprehensively reviewed. An overview of fiber-based self-powered systems and sensors according to their superior flexibility and cost-effectiveness is also presented. Finally, the challenges and opportunities in the field of fiber-based energy conversion are discussed.

Quaternary semiconductor Ba8Zn4Ga2S15 featuring unique one-dimensional chains and exhibiting desirable yellow emission

Yellow emissive Ba₈Zn₄Ga₂S₁₅, as the first example exhibiting a unique 1D chain structure in the quaternary X/Zn/Ga/Q system, was discovered.

Quaternary Pavonites A1+xSn2-xBi5+xS10 (A+ = Li+, Na+): Site Occupancy Disorder Defines Electronic Structure

The field of mineralogy represents an area of untapped potential for the synthetic chemist, as there are numerous structure types that can be utilized to form analogues of mineral structures with useful optoelectronic properties. In this work, we describe the synthesis and characterization of two novel quaternary sulfides A_1+xSn_2-xBi_5+xS₁₀ (A = Li⁺, Na⁺). Though not natural minerals themselves, both compounds adopt the pavonite structure, which crystallizes in the C2/m space group and consists of two connected, alternating defect rock-salt slabs of varying thicknesses to create a three-dimensional lattice. Despite their commonalities in structure, their crystallography is noticeably different, as both structures have a heavy degree of site occupancy disorder that affects the actual positions of the atoms. The differences in site occupancy alter their electronic structures, with band gap values of 0.31(2) eV and 0.07(2) eV for the lithium and sodium analogues, respectively. LiSn₂Bi₅S₁₀ exhibits ultralow thermal conductivity of 0.62 W m^-1 K^-1 at 723 K, and this result is corroborated by phonon dispersion calculations. This structure type is a promising host candidate for future thermoelectric materials investigation, as these materials have narrow band gaps and intrinsically low thermal conductivities.

Quasi-two-dimensional superconductivity from dimerization of atomically ordered AuTe2Se4/3 cubes

The emergent phenomena such as superconductivity and topological phase transitions can be observed in strict two-dimensional (2D) crystalline matters. Artificial interfaces and one atomic thickness layers are typical 2D materials of this kind. Although having 2D characters, most bulky layered compounds, however, do not possess these striking properties. Here, we report quasi-2D superconductivity in bulky AuTe₂Se_4/3, where the reduction in dimensionality is achieved through inducing the elongated covalent Te–Te bonds. The atomic-resolution images reveal that the Au, Te, and Se are atomically ordered in a cube, among which are Te–Te bonds of 3.18 and 3.28 Å. The superconductivity at 2.85 K is discovered, which is unraveled to be the quasi-2D nature owing to the Berezinsky–Kosterlitz–Thouless topological transition. The nesting of nearly parallel Fermi sheets could give rise to strong electron–phonon coupling. It is proposed that further depleting the thickness could result in more topologically-related phenomena.

Emergent phenomena often appear in crystals in the two-dimensional limit but are rare in bulky compounds. Here, Guo et al. report a quasi-two-dimensional superconductivity in a bulk material AuTe₂Se_4/3 at 2.85 K, potentially owing to a topological transition.