Giant PbSe/CdSe/CdSe Quantum Dots: Crystal-Structure-Defined Ultrastable Near-Infrared Photoluminescence from Single Nanocrystals

Advanced Interface Engineering in Gradient Core/Shell Quantum Dots Enables Efficient Photoelectrochemical Hydrogen Evolution

Semiconductor core/shell quantum dots (QDs) are considered promising building blocks to fabricate photoelectrochemical (PEC) cells for the direct conversion of solar energy into hydrogen (H2). However, the lattice mismatch between core and shell in such QDs results in undesirable defects and severe carrier recombination, limiting photo-induced carrier separation/transfer and solar-to-fuel conversion efficiency. Here, an interface engineering approach is explored to minimize the core-shell lattice mismatch in CdS/CdSexS1-x (x = 0.09-1) core/shell QDs (g-CSG). As a proof-of-concept, PEC cells based on g-CSG QDs yield a remarkable photocurrent density of 13.1 mA cm-2 under AM 1.5 G one-sun illumination (100 mW cm-2), which is ≈54.1% and ≈33.7% higher compared to that in CdS/CdSe0.5S0.5 (g-CSA) and CdS/CdSe QDs (g-CS), respectively. Theoretical calculations and carrier dynamics confirm more efficient carrier separation and charge transfer rate in g-CSG QDs with respect to g-CSA and g-CS QDs. These results are attributed to the minimization of the core-shell lattice mismatch by the cascade gradient shell in g-CSG QDs, which modifies carrier confinement potential and reduces interfacial defects. This work provides fundamental insights into the interface engineering of core/shell QDs and may open up new avenues to boost the performance of PEC cells for H2 evolution and other QDs-based optoelectronic devices.

Advances in Solution-Processed Blue Quantum Dot Light-Emitting Diodes

Quantum dot light-emitting diodes (QLEDs) have been identified as a next-generation display technology owing to their low-cost manufacturing, wide color gamut, and electrically driven self-emission properties. However, the efficiency and stability of blue QLEDs still pose a significant challenge, limiting their production and potential application. This review aims to analyse the factors leading to the failure of blue QLEDs and presents a roadmap to accelerate their development based on the progress made in the synthesis of II-VI (CdSe, ZnSe) quantum dots (QDs), III-V (InP) QDs, carbon dots, and perovskite QDs. The proposed analysis will include discussions on material synthesis, core-shell structures, ligand interactions, and device fabrication, providing a comprehensive overview of these materials and their development.

Two-Dimensional Optical Waveguides at Telecom Wavelengths Based on Organic Single-Crystal Microsheets of a Charge Transfer Complex

Organic charge transfer (CT) cocrystals open a new door for the exploitation of low-dimensional near-infrared (NIR) emitters by a convenient self-assembly approach. However, research about the fabrication of sheet-like NIR-emitting microstructures that are significant for structural construction and integrated application is limited by the unidirectional molecular packing mode. Herein, via regulation of the biaxial intermolecular CT interaction, single-crystalline microsheets with remarkable NIR emission from 720 to 960 nm were synthesized via the solution self-assembly process of dithieno[3,2-b:2',3'-d]thiophene and 7,7,8,8-tetracyanoquinodimethane. The expected sheet-like structure is conducive to achieving a two-dimensional (2D) optical waveguide with an ultralow optical loss rate of 0.250 dB/μm at 860 nm. More significantly, these as-prepared organic microsheets with tunable thicknesses (h) from 100 to 1100 nm exhibit thickness-dependent NIR optical transportation performance. These findings could pave the way to a new class of low-dimensional NIR emitters for 2D photonics at telecom wavelengths.

Epitaxial CdSe/PbSe Heterojunction Growth and MWIR Photovoltaic Detector

A novel Epitaxial Cadmium Selenide (CdSe) on Lead Selenide (PbSe) type-II heterojunction photovoltaic detector has been demonstrated by Molecular Beam Epitaxy (MBE) growth of n-type CdSe on p-type PbSe single crystalline film. The use of Reflection High-Energy Electron Diffraction (RHEED) during the nucleation and growth of CdSe indicates high-quality single-phase cubic CdSe. This is a first-time demonstration of single crystalline and single phase CdSe growth on single crystalline PbSe, to the best of our knowledge. The current-voltage characteristic indicates a p-n junction diode with a rectifying factor over 50 at room temperature. The detector structure is characterized by radiometric measurement. A 30 μm × 30 μm pixel achieved a peak responsivity of 0.06 A/W and a specific detectivity (D*) of 6.5 × 10⁸ Jones under a zero bias photovoltaic operation. With decreasing temperature, the optical signal increased by almost an order of magnitude as it approached 230 K (with thermoelectric cooling) while maintaining a similar level of noise, achieving a responsivity of 0.441 A/W and a D* of 4.4 × 10⁹ Jones at 230 K.

Near-infrared photoactive Ag-Zn-Ga-S-Se quantum dots for high-performance quantum dot-sensitized solar cells

The high light-harvesting ability of quantum dots (QDs) plays an eminent role in the performance of solar cells. In this study, we synthesized Ag-Zn-Ga-S-Se-based alloyed QDs by colloidal hot injection and characterized them. The X-ray photoelectron spectrum analysis confirms the +1, +2, +3, -2, and -2 oxidation states of, respectively, Ag, Zn, Ga, S, and Se in the QDs, and the energy-dispersive X-ray spectrum analysis confirms the 1:1:1:1.5:1.5 stoichiometric ratio of, respectively, Ag, Zn, Ga, S, and Se. These two results indicate the formation of I-II-III-VI₃-type alloyed crystals (AgZnGaS_1.5Se_1.5 nanocrystals). TEM image analysis reveals the QD nature of the synthesized Ag-Zn-Ga-S-Se nanocrystals. The X-ray diffraction pattern confirms the hexagonal structure. Due to the near-infrared light absorption capability, the synthesized QDs were used as the sensitizer to fabricate QDSCs. The fabricated QDSCs were characterized by using electrochemical impedance spectroscopy and photovoltaic performance studies. The fabricated QDSC have superior electrochemical activity with a photoconversion efficiency of 4.91%.

The Pursuit of Shortwave Infrared-Emitting Nanoparticles with Bright Fluorescence through Molecular Design and Excited-State Engineering of Molecular Aggregates

Shortwave infrared (SWIR) fluorescence detection gradually becomes a pivotal real-time imaging modality, allowing one to elucidate biological complexity in deep tissues with subcellular resolution. The key challenge for the further growth of this imaging modality is the design of new brighter biocompatible fluorescent probes. This review summarizes the recent progress in the development of organic-based nanomaterials with an emphasis on new strategies that extend the fluorescence wavelength from the near-infrared to the SWIR spectral range and amplify the fluorescence brightness. We first introduce the most representative molecular design strategies to obtain near-infrared-SWIR wavelength fluorescence emission from small organic molecules. We then discuss how the formation of nanoparticles based on small organic molecules contributes to the improvement of fluorescence brightness and the shift of fluorescence to SWIR, with a special emphasis on the excited-state engineering of molecular probes in an aggregate state and spatial packing of the molecules in nanoparticles. We build our discussion based on a historical perspective on the photophysics of molecular aggregates. We extend this discussion to nanoparticles made of conjugated polymers and discuss how fluorescence characteristics could be improved by molecular design and chain conformation of the polymer molecules in nanoparticles. We conclude the article with future directions necessary to expand this imaging modality to wider bioimaging applications including single-particle deep tissue imaging. Issues related to the characterization of SWIR fluorophores, including fluorescence quantum yield unification, are also mentioned.

The Rise and Future of Discrete Organic-Inorganic Hybrid Nanomaterials

Hybrid nanomaterials (HNs), the combination of organic semiconductor ligands attached to nanocrystal semiconductor quantum dots, have applications that span a range of practical fields, including biology, chemistry, medical imaging, and optoelectronics. Specifically, HNs operate as discrete, tunable systems that can perform prompt fluorescence, energy transfer, singlet fission, upconversion, and/or thermally activated delayed fluorescence. Interest in HNs has naturally grown over the years due to their tunability and broad spectrum of applications. This Review presents a brief introduction to the components of HNs, before expanding on the characterization and applications of HNs. Finally, the future of HN applications is discussed.

Colloidal 2D PbSe nanoplatelets with efficient emission reaching the telecom O-, E- and S-band

Colloidal two-dimensional (2D) lead chalcogenide nanoplatelets (NPLs) represent highly interesting materials for near- and short wave-infrared applications including innovative glass fiber optics exhibiting negligible attenuation. In this work, we demonstrate a direct synthesis route for 2D PbSe NPLs with cubic rock salt crystal structure at low reaction temperatures of 0 °C and room temperature. A lateral size tuning of the PbSe NPLs by controlling the temperature and by adding small amounts of octylamine to the reaction leads to excitonic absorption features in the range of 1.55-1.24 eV (800-1000 nm) and narrow photoluminescence (PL) reaching the telecom O-, E- and S-band (1.38-0.86 eV, 900-1450 nm). The PL quantum yield of the as-synthesized PbSe NPLs is more than doubled by a postsynthetic treatment with CdCl2 (e.g. from 14.7% to 37.4% for NPLs emitting at 980 nm with a FWHM of 214 meV). An analysis of the slightly asymmetric PL line shape of the PbSe NPLs and their characterization by ultrafast transient absorption and time-resolved PL spectroscopy reveal a surface trap related PL contribution which is successfully reduced by the CdCl2 treatment from 40% down to 15%. Our results open up new pathways for a direct synthesis and straightforward incorporation of colloidal PbSe NPLs as efficient infrared emitters at technologically relevant telecom wavelengths.

Toward Bright Mid-Infrared Emitters: Thick-Shell n-Type HgSe/CdS Nanocrystals

A procedure is developed for the growth of thick, conformal CdS shells that preserve the optical properties of 5 nm HgSe cores. The n-doping of the HgSe/CdS core/shell particles is quantitatively tuned through a simple postsynthetic Cd treatment, while the doping is monitored via the intraband optical absorption at 5 μm wavelength. Photoluminescence lifetime and quantum yield measurements show that the CdS shell greatly increases the intraband emission intensity. This indicates that decoupling the excitation from the environment reduces the nonradiative recombination. We find that weakly n-type HgSe/CdS are the brightest solution-phase mid-infrared chromophores reported to date at room temperature, achieving intraband photoluminescence quantum yields of 2%. Such photoluminescence corresponds to intraband lifetimes in excess of 10 ns, raising important questions about the fundamental limits to achievable slow intraband relaxation in quantum dots.

Near-Infrared Inorganic Nanomaterials for Precise Diagnosis and Therapy

Traditional wavelengths (400–700 nm) have made tremendous inroads in vivo fluorescence imaging. However, the ability of visible light photon penetration hampered the bio-applications. With reduced photon scattering, minimal tissue absorption and negligible autofluorescence properties, near-infrared light (NIR 700–1700 nm) demonstrates better resolution, high signal-to-background ratios, and deep tissue penetration capability, which will be of great significance for in-vivo determination in deep tissue. In this review, we summarized the latest novel NIR inorganic nanomaterials and the emission mechanism including single-walled carbon nanotubes, rare-earth nanoparticles, quantum dots, metal nanomaterials. Subsequently, the recent progress of precise noninvasive diagnosis in biomedicine and cancer therapy utilizing near-infrared inorganic nanomaterials are discussed. In addition, this review will highlight the concerns, challenges and future directions of near-infrared light utilization.

Atomic Identification of Interfaces in Individual Core@shell Quantum Dots

CdSe@CdS Core@shell quantum dots (QDs) have been widely studied in recent years, due to their architecture which allows to tailor properties by controlling structure and composition. However, since CdSe and CdS have the same crystal structure, same cations, and similar lattice parameters, it is very challenging to image the interface. Herein, high-resolution transmission electron microscopy, high-angle annular dark-field imaging, and energy-dispersive X-ray spectroscopy elemental mapping are combined to characterize the core@shell structure and identify the interface in the CdSe@CdS QDs with different CdS shell thicknesses. By examining changes in lattice spacing in an individual CdSe@CdS quantum dot, the atomic core@shell interface is identified. For thin-shelled QDs, an ideal coherent interface forms between core and shell due to the small lattice mismatch, and the lattice spacing remains unchanged at the core and shell regions. For thick-shelled QDs, the lattice spacing is different at the core and shell regions, while the heterostructured interface is still coherent and cannot be clearly imaged. As the shell thickness further increases, a sharp core@shell interface appears. The results define an approach to characterize the heterostructure of two materials with the same crystalline structure and cations.

Rational synthesis of novel "giant" CuInTeSe/CdS core/shell quantum dots for optoelectronics

"Giant" core/shell quantum dots (g-QDs) are promising candidates for emerging optoelectronic technologies thanks to their facile structure/composition-tunable optoelectronic properties and outstanding photo-physical/chemical stability. Here, we synthesized a new type of CuInTeSe (CITS)/CdS g-QDs and regulated their optoelectronic properties by controlling the shell thickness. Through increasing the shell thickness, as-prepared g-QDs exhibited tunable red-shifted emission (from 900 to 1200 nm) and prolonged photoluminescence (PL) lifetimes (up to ∼14.0 μs), indicating a formed band structure showing efficient charge separation and transfer, which is further testified by theoretical calculations and ultrafast time-resolved transient absorption (TA) spectroscopy. These CITS/CdS g-QDs with various shell thicknesses can be employed to fabricate photoelectrochemical (PEC) cells, exhibiting improved photoresponse and stability as compared to the bare CITS QD-based devices. The results indicate that the rational design and engineering of g-QDs is very promising for future QD-based optoelectronic technologies.

Highly versatile near-infrared emitters based on an atomically defined HgS interlayer embedded into a CdSe/CdS quantum dot

The availability of colloidal quantum dots with highly efficient, fast and 'non-blinking' near-infrared emission would benefit numerous applications, from advanced optical communication and quantum networks to biomedical diagnostics. Here, we report high-quality near-infrared emitters that are based on well known CdSe/CdS heterostructures. By incorporating an HgS interlayer at the quantum dot core/shell interface, we convert normally visible emitters into highly efficient near-infrared fluorophores. Employing thermodynamically controlled sequential deposition of metal and chalcogen ions, we achieve atomic-level precision in defining the thickness of the HgS interlayer (H). This manifests in 'quantized' jumps of the photoluminescence spectrum when H changes in discrete, atomic steps. The synthesized structures show highly efficient photoluminescence, tunable from 700 to 1,370 nm, and fast radiative rates of ~1/60 ns^-1. The emission from individual CdSe/HgS/CdS colloidal quantum dots is virtually blinking free and exhibits nearly perfect single-photon purity. In addition, when incorporated into a light-emitting-diode architecture, these quantum dots demonstrate strong electroluminescence with a sub-bandgap turn-on voltage.

Interplay of Bright Triplet and Dark Excitons Revealed by Magneto-Photoluminescence of Individual PbS/CdS Quantum Dots

A low-temperature polarization-resolved magneto-photoluminescence experiment is performed on individual PbS/CdS core/shell quantum dots (QDs). The experiment enables a direct measurement of the exciton Landé g factor and the anisotropic zero-field splitting of the lowest emissive bright exciton triplet in PbS/CdS QDs. While anisotropic splittings of individual QDs distribute randomly in 104-325 μeV range, the exciton Landé g factors increase from 0.95 to 2.70 as the emission energy of the QD increases from 1.0 to 1.2 eV. The tight-binding calculations allow to rationalize these trends as a direct consequence of reducing a cubic symmetry of QD via addition/removal of a few (<70) atoms from the surfaces of the PbS core. Furthermore, it is observed that while right (σ  ⁺ ) and left (σ   ^- ) circularly polarized photoluminescence (PL) peaks split linearly with magnetic field as expected for Zeeman effect, the energy splitting between X and Y linearly polarized PL peaks remains nearly unchanged. The theoretical study reveals rich and complex magnetic field-induced interplay of bright triplet and dark exciton states explaining this puzzling behavior. These findings fill the missing gaps in the understanding of lead salt QDs and provide foundation for development of classical and quantum light sources operating at telecommunication wavelengths.

Near-infrared heavy-metal-free SnSe/ZnSe quantum dots for efficient photoelectrochemical hydrogen generation

Solar-driven photoelectrochemical (PEC) hydrogen production is one of the most effective strategies for solar-to-hydrogen energy conversion. Among various types of semiconductors used for PEC anodes, colloidal quantum dots (QDs) have been widely used as new and promising absorbers for PEC and other optoelectronic devices. However, currently, most efficient optoelectronic devices contain toxic Pb/Cd elements or non-earth-abundant elements (In/Ag). It is still a challenge to produce Pb/Cd-free QDs without using any toxic and non-earth-abundant elements. Here, we synthesized SnSe QDs via a diffusion-controlled hot injection approach and further stabilized the as-prepared SnSe QDs via a cation exchange reaction. The as-synthesized Zn-stabilized SnSe QDs (SnSe/ZnSe) have an orthorhombic crystal structure with indirect bandgaps ranging from 1 to 1.37 eV. Zn stabilization can significantly decrease the number of QD surface metallic Sn bonds, thereby decreasing the number of recombination centers of defects/traps. As a proof-of-concept, SnSe/ZnSe QDs are used as light absorbers for PEC hydrogen production, leading to a saturated photocurrent density of 7 mA cm^-2, which is comparable to best values reported for PEC devices based on toxic-metal-free QDs. Our results indicate that Zn-stabilized SnSe QDs have great potential for use in emerging optoelectronic devices.

PbS/CdS Quantum Dot Room-Temperature Single-Emitter Spectroscopy Reaches the Telecom O and S Bands via an Engineered Stability

We synthesized PbS/CdS core/shell quantum dots (QDs) to have functional single-emitter properties for room-temperature, solid-state operation in the telecom O and S bands. Two shell-growth methods-cation exchange and successive ionic layer adsorption and reaction (SILAR)-were employed to prepare QD heterostructures with shells of 2-16 monolayers. PbS/CdS QDs were sufficiently bright and stable to resolve photoluminescence (PL) spectra representing both bands from single nanocrystals using standard detection methods, and for a QD emitting in the O-band a second-order correlation function showed strong photon antibunching, important steps toward demonstrating the utility of lead chalcogenide QDs as single-photon emitters (SPEs). Irrespective of type, few telecom-SPEs exist that are capable of such room-temperature operation. Access to single-QD spectra enabled a direct assessment of spectral line width, which was ∼70-90 meV compared to much broader ensemble spectra (∼300 meV). We show inhomogeneous broadening results from dispersity in PbS core sizes that increases dramatically with extended cation exchange. Quantum yields (QYs) are negatively impacted at thick shells (>6 monolayers) and, especially, by SILAR-growth conditions. Time-resolved PL measurements revealed that, with SILAR, initially single-exponential PL-decays transition to biexponential, with opening of nonradiative carrier-recombination channels. Radiative decay times are, overall, longer for core/shell QDs compared to PbS cores, which we demonstrate can be partially attributed to some core/shell sizes occupying a quasi-type II electron-hole localization regime. Finally, we demonstrate that shell engineering and the use of lower laser-excitation powers can afford significantly suppressed blinking and photobleaching. However, dependence on shell thickness comes at a cost of less-than-optimal brightness, with implications for both materials and experimental design.

Intrinsic Exciton Photophysics of PbS Quantum Dots Revealed by Low-Temperature Single Nanocrystal Spectroscopy

With a tunable size-dependent photoluminescence (PL) over a wide infrared wavelength range, lead chalcogenide quantum dots (QDs) have attracted significant scientific and technological interest. Nevertheless, the investigation of intrinsic exciton photophysics at the single-QD level has remained a challenge. Herein, we present a comprehensive study of PL properties for the individual core/shell PbS/CdS QDs emissive near 1.0 eV. In contrast to the sub-meV spectral line widths observed for II/VI QDs, PbS/CdS QDs are predicted to possess broad homogeneous line widths. Performing spectroscopy at cryogenic (4 K) temperatures, we provide direct evidence confirming theoretical predictions, showing that intrinsic line widths for PbS/CdS QDs are in the range of 8-25 meV, with an average of 16.4 meV. In addition, low-temperature, single-QD spectroscopy reveals a broad low-energy side emission attributable to optical as well as localized acoustic phonon-assisted transitions. By tracking single QDs from 4 to 250 K, we were able to probe temperature-dependent evolutions of emission energy, line width, and line shape. Finally, polarization-resolved PL imaging showed that PbS/CdS QDs are characterized by a 3D emission dipole, in contrast with the 2D dipole observed for CdSe QDs.

Ecotoxicology impact of silica-coated CdSe/ZnS quantum dots internalized in Chlamydomonas reinhardtii algal cells

The use of quantum dots (QD) in various medical and industrial applications may cause these nanoparticles to leak into waterways and subsequently enter the food chain. Therefore, if we intend to use QD, we must first know their potential environmental implications. In this work, cadmium selenide/zinc sulfide core/shell QD were synthesized, and then, biocompatible, water-dispersed QD were coated with silica (Si-QD). The QD were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) combined with energy-dispersive X-ray spectroscopy (EDX), and UV-Vis absorption analysis, which revealed that these surface-engineered QD have a highly crystalline, homogeneous spherical shape measuring approximately 25 nm. The cytotoxicity of the nanoparticles in the green algae Chlamydomonas reinhardtii was studied by incubating the algae cells with Si-QD and determining the optical density of algal cell culture, cell counts, and cells sizes by microflow cytometry. These measurements indicated that Si-QD are biocompatible up to a concentration of 25 ng/ml. Finally, the cellular uptake of Si-QD into C. reinhardtii was monitored by confocal laser scanning microscopy (CLSM). In conclusion, our results reveal that surface-engineered Cd-QD can penetrate the cells of aquatic organisms, which ensures a serious impact on the food chain and consequently the environment. On the other hand, the results also highlight a new potential method for bioremediation of Cd-QD by green algae, especially C. reinhardtii.

Semiconductor Nanocrystal Light Absorbers for Photon Upconversion

Semiconductor nanocrystals (NCs) can initiate energy and charge transfer in multiple applications with their unique optical and electronic properties. In particular, NCs are excellent light absorbers for initiating triplet energy transfer (TET) to organic molecules, a key step in triplet-fusion-based photon upconversion. Triplet energy transfer across this inorganic-organic interface is one of the bottlenecks that currently limits the overall photon upconversion quantum yield. In this Perspective, we summarize the progress made in the past three years on this hybrid photon upconversion platform. We discuss the effects of NC size, composition, and surface states on TET. Nanocrystal surface engineering may address the loss mechanisms arising from defect states and exciton-phonon coupling. Alternative materials for NC triplet photosensitizers that do not contain toxic heavy metals will be especially useful for various biological applications.

Tailoring the interfacial structure of colloidal "giant" quantum dots for optoelectronic applications

Colloidal semiconductor quantum dots (QDs) are promising building blocks for the realization of future optoelectronic technologies, thanks to their size-tunable electronic and optical properties. Among various types of QDs, colloidal "giant" QDs (g-QDs, core/thick-shell) have been widely used in different applications, such as solar cells, light emitting devices, luminescent solar concentrators and photoelectrochemical (PEC) hydrogen production. However, g-QDs have a thick-shell which serves as a physical barrier for electron and hole transfer, leading to a slow charge transfer rate. In this work, we synthesized CdSe/CdSexS1-x/CdS core/shell/shell g-QDs with an intermediate CdSexS1-x alloyed layer. The presence of this interfacial layer largely improves the absorption of CdSe/CdS QDs, particularly in the 300-650 nm range. By engineering the interfacial layer, the holes can leak more into the CdS shell region compared to that of CdSe/CdS QDs. PEC devices based on alloyed g-QDs exhibit a 20% higher saturated photocurrent density (11 ± 0.5 mA cm-2) compared to CdSe/CdS QDs. In addition, after one-hour illumination (100 mW cm-2), the PEC cell based on alloyed g-QDs still exhibits a photocurrent density of 7.5 mA cm-2, maintaining 70% of its initial value. Such alloyed g-QDs are very promising for several emerging optoelectronic applications, where charge separation, transfer and transport play a critical role for the realization of high performance devices.

Optoelectronic Properties in Near-Infrared Colloidal Heterostructured Pyramidal "Giant" Core/Shell Quantum Dots

Colloidal heterostructured quantum dots (QDs) are promising candidates for next-generation optoelectronic devices. In particular, "giant" core/shell QDs (g-QDs) can be engineered to exhibit outstanding optical properties and high chemical/photostability for the fabrication of high-performance optoelectronic devices. Here, the synthesis of heterostructured CuInSe x S2-x (CISeS)/CdSeS/CdS g-QDs with pyramidal shape by using a facile two-step method is reported. The CdSeS/CdS shell is demonstrated to have a pure zinc blend phase other than typical wurtzite phase. The as-obtained heterostructured g-QDs exhibit near-infrared photoluminescence (PL) emission (≈830 nm) and very long PL lifetime (in the microsecond range). The pyramidal g-QDs exhibit a quasi-type II band structure with spatial separation of electron-hole wave function, suggesting an efficient exciton extraction and transport, which is consistent with theoretical calculations. These heterostructured g-QDs are used as light harvesters to fabricate a photoelectrochemical cell, exhibiting a saturated photocurrent density as high as ≈5.5 mA cm-2 and good stability under 1 sun illumination (AM 1.5 G, 100 mW cm-2). These results are an important step toward using heterostructured pyramidal g-QDs for prospective applications in solar technologies.

The Role of Liquid Ink Transport in the Direct Placement of Quantum Dot Emitters onto Sub-Micrometer Antennas by Dip-Pen Nanolithography

Dip-pen nanolithography (DPN) is used to precisely position core/thick-shell ("giant") quantum dots (gQDs; ≥10 nm in diameter) exclusively on top of silicon nanodisk antennas (≈500 nm diameter pillars with a height of ≈200 nm), resulting in periodic arrays of hybrid nanostructures and demonstrating a facile integration strategy toward next-generation quantum light sources. A three-step reading-inking-writing approach is employed, where atomic force microscopy (AFM) images of the pre-patterned substrate topography are used as maps to direct accurate placement of nanocrystals. The DPN "ink" comprises gQDs suspended in a non-aqueous carrier solvent, o-dichlorobenzene. Systematic analyses of factors influencing deposition rate for this non-conventional DPN ink are described for flat substrates and used to establish the conditions required to achieve small (sub-500 nm) feature sizes, namely: dwell time, ink-substrate contact angle and ink volume. Finally, it is shown that the rate of solvent transport controls the feature size in which gQDs are found on the substrate, but also that the number and consistency of nanocrystals deposited depends on the stability of the gQD suspension. Overall, the results lay the groundwork for expanded use of nanocrystal liquid inks and DPN for fabrication of multi-component nanostructures that are challenging to create using traditional lithographic techniques.