Electrical Property of Mo-Doped VO2 Nanowire Array Film by Melting−Quenching Sol−Gel Method

Multi-wavelength and broadband plasmonic switching with V-shaped plasmonic nanostructures on a VO2coated plasmonic substrate

In this paper, periodic arrays of identicalV-shaped gold nanostructures and variableV-shaped gold nanostructures are designed on top of a gold-coated silicon dioxide (SiO2) substrate with a thin spacer layer of vanadium dioxide (VO2) to realize multi-wavelength and broadband plasmonic switches, respectively. The periodic array of identicalV-shaped nanostructures (IVNSs) with small inter-particle separation leads to coupled interactions of the elementary plasmons of aV-shaped nanostructure (VNS), resulting in a hybridized plasmon response with two longitudinal plasmonic modes in the reflectance spectra of the proposed switches when the incident light is polarized in thex-direction. Thex-direction is oriented along the axis that joins theV-junctions of all VNSs in one unit cell of the periodic array. On exposure to temperature, electric field, or optical stimulus, the VO2layer transforms from its monoclinic semiconducting state to its rutile metallic state, leading to an overall change in the reflectance spectra obtained from the proposed nanostructures and resulting in an efficient multi-wavelength switching action. Finite difference time domain modelling is employed to demonstrate that an extinction ratio (ER) >12 dB at two wavelengths can be achieved by employing the proposed switches based on periodic arrays of IVNSs. Further, plasmonic switches based on variableV-shaped nanostructures-i.e. multiple VNSs with variable arm lengths in one unit cell of a periodic array-are proposed for broadband switching. In the broadband operation mode, we report an ER >5 dB over an operational wavelength range >1400 nm in the near-IR spectral range spanning over all optical communication bands, i.e. theO, E, S, C, LandUbands. Further, it is also demonstrated that the wavelength of operation for these switches can be tuned by varying the geometrical parameters of the proposed switches. These switches have the potential to be employed in communication networks where ultrasmall and ultrafast switches with multi-wavelength operation or switching over a wide operational bandwidth are inevitably required.

Thermochromic Polymer Nanocomposites for the Heat Detection System: Recent Progress on Properties, Applications, and Challenges

Reversible thermochromic polymers have emerged as compelling candidates in recent years, captivating attention for their application in heat detection systems. This comprehensive review navigates through the multifaceted landscape, intricately exploring both the virtues and hurdles inherent in their integration within these systems. Their innate capacity to change colour in response to temperature fluctuations renders reversible thermochromic nanocomposites promising assets for heat detection technologies. However, despite their inherent potential, certain barriers hinder their widespread adoption. Factors such as a restricted colour spectrum, reliance on external triggers, and cost considerations have restrained their pervasive use. For instance, these polymer-based materials exhibit utility in the domain of building insulation, where their colour-changing ability serves as a beacon, flagging areas of heat loss or inadequate insulation, thus alerting building managers and homeowners to potential energy inefficiencies. Nevertheless, the limited range of discernible colours may impede precise temperature differentiation. Additionally, dependency on external stimuli, such as electricity or UV light, can complicate implementation and inflate costs. Realising the full potential of these polymer-based materials in heat detection systems necessitates addressing these challenges head-on. Continuous research endeavours aimed at augmenting colour diversity and diminishing reliance on external stimuli offer promising avenues to enhance their efficacy. Hence, this review aims to delve into the intricate nuances surrounding reversible thermochromic nanocomposites, highlighting their transformative potential in heat detection and sensing. By exploring their mechanisms, properties, and current applications, this manuscript endeavours to shed light on their significance, providing insights crucial for further research and potential applications.

Plasmonic switches based on VO2as the phase change material

In this paper, a comprehensive review of the recent advancements in the design and development of plasmonic switches based on vanadium dioxide (VO2) is presented. Plasmonic switches are employed in applications such as integrated photonics, plasmonic logic circuits and computing networks for light routing and switching, and are based on the switching of the plasmonic properties under the effect of an external stimulus. In the last few decades, plasmonic switches have seen a significant growth because of their ultra-fast switching speed, wide spectral tunability, ultra-compact size, and low losses. In this review, first, the mechanism of the semiconductor to metal phase transition in VO2is discussed and the reasons for employing VO2over other phase change materials for plasmonic switching are described. Subsequently, an exhaustive review and comparison of the current state-of-the-art plasmonic switches based on VO2proposed in the last decade is carried out. As the phase transition in VO2can be activated by application of temperature, voltage or optical light pulses, this review paper has been categorized into thermally-activated, electrically-activated, and optically-activated plasmonic switches based on VO2operating in the visible, near-infrared, infrared and terahertz frequency regions.

Sol-Gel Derived Tungsten Doped VO2 Thin Films on Si Substrate with Tunable Phase Transition Properties

Vanadium dioxide (VO₂) with semiconductor-metal phase transition characteristics has presented great application potential in various optoelectrical smart devices. However, the preparation of doped VO₂ film with a lower phase transition threshold on Si substrate needs more investigation for the exploration of silicon-based VO₂ devices. In this work, the VO₂ films doped with different contents of W element were fabricated on high-purity Si substrate, assisted with a post-annealing process. The films exhibited good crystallinity and uniform thickness. The X-ray diffraction and X-ray photoelectron spectroscopy characterizations illustrated that W element can be doped into the lattice of VO₂ and lead to small lattice distortion. In turn, the in situ FT-IR measurements indicated that the phase transition temperature of the VO₂ films can be decreased continuously with W doping content. Simultaneously, the doping would lead to largely enhanced conductivity in the film, which results in reduced optical transmittance. This work provides significant insights into the design of doped VO₂ films for silicon-based devices.

Tungsten-oxygen bond pre-introduced VO2(B) nanoribbons enable fast and stable zinc ion storage ability

The tunnel structure of the bronze phase vanadium dioxide (VO2(B)) can be used as the zinc ion storage active sites. However, the intense charge repulsion of divalent Zn2+ causes a sluggish reaction kinetics in the tunnel VO2(B). Here, a tungsten-oxygen bond pre-introduced (TOBI) approach is proposed to modulate the tunnel structure of VO2(B). The VO2(B) cathodes with TOBI of 0.5 at% to 3.0 at% have been controllably synthesized by a simple hydrothermal method. The results from structural analysis uncover that the pre-introduced W6+ replaces the V4+ in VO2(B) to form WO6 octahedra. Benefiting from the rapid diffusion kinetics, enhanced structural stability and improved conductivity enabled by the TOBI, the optimal VO2(B) nanoribbons with 1.5 at% shows a high reversible capacity of 265 mAh g-1, a high rate-performance of up-to 10 A g-1 and a long cycling stability of 2000 cycles. Moreover, a pseudo-capacitive dominated Zn2+ intercalation/de-intercalation behavior is solidly determined by the electrochemical kinetics testing and structural characterizations. This TOBI method is referential for developing other multivalent ion battery cathodes with outstanding performances.

A Novel Method for Notable Reducing Phase Transition Temperature of VO2 Films for Smart Energy Efficient Windows

Although Vanadium dioxide (VO₂) has a potential application value for smart energy efficient windows because of its unique phase transition characteristic, there are still many obstacles that need to be overcome. One challenge is to reduce its high transition temperature (ζ_c = 68 °C) to near room temperature without causing its phase transition performance degradation. In this paper, a novel method was employed that covered a 3 nm ultra-thin heavy Cr-doped VO₂ layer on the pure VO₂ films. Compared with the as-grown pure VO₂, obviously, phase transition temperature decreasing from 59.5 °C to 48.0 °C was observed. Different from previous doping techniques, almost no phase transition performance weakening occurred. Based on the microstructure and electrical parameters measurement results, the mechanism of ζ_c reducing was discussed. The upper ultra-thin heavy Cr-doped layer may act as the induced role of phase transition. With temperature increasing, carrier concentration increased from the upper heavy Cr-doped layer to the bottom pure VO₂ layer by diffusion, and induced the carrier concentration reach to phase transition critical value from top to bottom gradually. The present method is not only a simpler technique, but also avoids expensive alloy targets.

The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator-Metal Transition Behavior

In this work, VO₂ thin films were deposited on Si wafers (onto (100) surface) by DC magnetron sputtering under different cathode bias voltages. The effects of substrate biasing on the structural and optical properties were investigated. The results show that the metal–insulator transition (MIT) temperature of VO₂ thin films can be increased up to 14 K by applying a cathode bias voltage, compared to deposition conditions without any bias. The decrease in the transition efficiency and increase in the transition temperature are attributed to the enlarged grain size, increased defects, and the residual stress in the VO₂ thin films induced by biasing. The optical transmittance measurements for different thickness films indicate an attenuation coefficient of 3.1 × 10⁷ m⁻¹ at 2000 nm or an extinction coefficient of 4.9 in the metal phase. The optical transmittance vs wavelength characteristics point to an indirect bandgap of 0.6 ± 0.5 eV and significant scattering in the bulk and/or at the interface.

Reversible and repeatable phase transition at a negative temperature regime for doped and co-doped spin coated mixed valence vanadium oxide thin films

Smooth, uniform mixed valance vanadium oxide (VO) thin films are grown on flexible, transparent Kapton and opaque Al6061 substrates by the spin coating technique at a constant rpm of 3000. Various elements e.g., F, Ti, Mo and W are utilized for doping and co-doping of VO. All the spin coated films are heat treated in a vacuum. Other than the doping elements the existence of only V⁴⁺ and V⁵⁺ species is noticed in the present films. Transmittance as a function of wavelength and the optical band gap are also investigated for doped and co-doped VO thin films grown on a Kapton substrate. The highest transparency (∼75%) is observed for the Ti, Mo and F (i.e., Ti–Mo–FVO) co-doped VO system while the lowest transparency (∼35%) is observed for the F (i.e., FVO) doped VO system. Thus, the highest optical band gap is estimated as 2.73 eV for Ti–Mo–FVO and the lowest optical band gap (i.e., 2.59 eV) is found for the FVO system. The temperature dependent phase transition characteristics of doped and co-doped VO films on both Kapton and Al6061 are studied by the differential scanning calorimetry (DSC) technique. Reversible and repeatable phase transition is noticed in the range of −24 to −26.3 °C.

Smooth, uniform mixed valance vanadium oxide (VO) thin films are grown on flexible, transparent Kapton and opaque Al6061 substrates by the spin coating technique at a constant rpm of 3000.

Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

Among the techniques to create VO₂ nanostructures, the sol–gel method is the most facile and benefits from simple, manipulable synthetic parameters. Here, by utilizing various TEM techniques, we report the sequential morphological evolution of VO₂ nanostructures in a sol–gel film spin-coated on a customized TEM grid, which underwent oxygen reduction as the annealing temperature increased. In situ TEM dark-field imaging and Raman spectroscopy allowed us to confirm the sharp phase transition behavior of an individual nanowire by illustrating the effect of electrode-clamping-induced tensile stress on the nucleation of the R phase from the M1 phase. The electrical transport properties of a single-nanowire device fabricated on a customized TEM grid showed excellent control of the stoichiometry and crystallinity of the wire. These results offer critical information for preparing tailored VO₂ nanostructures with advanced transition properties by the sol–gel method to enable the fabrication of scalable flexible devices.

The single-VO₂ nanowire device synthesized via sequential morphological evolutions with oxygen reduction during annealing features a sharp metal-insulator transition.

Insulator-metal transition in substrate-independent VO2 thin film for phase-change devices

Vanadium has 11 oxide phases, with the binary VO2 presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator-to-metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO2 a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO2 synthesis have also been standing issues in VO2 fabrication. Here, we address these major challenges in harnessing the functionality in VO2 by demonstrating an approach that enables crystalline, switchable VO2 on any substrate. Glass, silicon, and quartz are used as model platforms to show the effectiveness of the process. Temperature-dependent electrical and optical characterisation is used demonstrating three to four orders of magnitude in resistive switching, >60% chromic discrimination at infrared wavelengths, and terahertz property extraction. This capability will significantly broaden the horizon of applications that have been envisioned but remained unrealised due to the lack of ability to realise VO2 on any substrate, thereby exploiting its untapped potential.

Orbital electronic occupation effect on metal-insulator transition in Ti x V1-x O2

A series of Ti _x V_1-x O₂ (0%  ⩽  x  ⩽  4.48%) thin films on c-plane sapphire substrates have been fabricated by co-sputtering oxidation solutions, and the metal-insulator transition temperature (T _MIT) of Ti _x V_1-x O₂ films rises monotonically at the rate of 1.64 K/at.% Ti. The x-ray diffraction measurement results show that, after Ti⁴⁺ ion doping, the rutile structure expands along the c _r axis while shrinking along the a _r and b _r axis simultaneously. It makes the V-O bond length shorter, which is believed to upshift the π ^* orbitals. The rising of π ^* orbitals in Ti-doped VO₂ has been illustrated by ultraviolet-infrared spectroscopy and first-principles calculation. With the Ti⁴⁺ ion doping concentration increasing, the energy levels of π ^* orbitals are elevated and the electronic occupation of π ^* orbitals decreases, which weakens the shielding for the strong electron-electron correlations in the d_|| orbital and result in the T _MIT rising. The research reveals that the T _MIT of VO₂ can be effected by the electronic occupancy of π ^* orbitals in a rutile state, which is helpful for developing VO₂-based thermal devices.

Continuous Tuning of Phase Transition Temperature in VO2 Thin Films on c-Cut Sapphire Substrates via Strain Variation

Vanadium dioxide (VO₂) thin films with controlled thicknesses are deposited on c-cut sapphire substrates with Al-doped ZnO (AZO) buffer layers by pulsed laser deposition. The surface roughness of AZO buffer layers is varied by controlling oxygen pressure during growth. The strain in the VO₂ lattice is found to be dependent on the VO₂ thickness and the VO₂/AZO interface roughness. The semiconductor-to-metal transition (SMT) properties of VO₂ thin films are characterized and the transition temperature (T_c) is successfully tuned by the VO₂ thickness as well as the VO₂/AZO interface roughness. It shows that the T_c of VO₂ decreases with the decrease of film thickness or VO₂/AZO interface roughness. Other SMT properties of the VO₂ films are maintained during the T_c tuning. The results suggest that the strain tuning induced by AZO buffer provides an effective approach for tuning T_c of VO₂ continuously.

Optical properties and structural phase transitions of W-doped VO2(R) under pressure

The structure transition sequence of W–VO₂(R) nanoparticles follows rutile (R) → orthorhombic (CaCl₂-type) → monoclinic (Mx) within metallic phases.

First-principles study on the phase transition temperature of X-doped (X = Li, Na or K) VO2

The calculated electronic structures and optical properties indicate that K can be selected as an appropriate doping element for VO₂, since it can effectively lower the phase transition temperature as well as enhance the near-infrared absorption.

Direct and continuous synthesis of VO2 nanoparticles

Monoclinic VO2 nanoparticles are of interest due to the material's thermochromic properties, however, direct synthesis routes to VO2 nanoparticles are often inaccessible due to the high synthesis temperatures or long reaction times required. Herein, we present a two-step synthesis route for the preparation of monoclinic VO2 nanoparticles using Continuous Hydrothermal Flow Synthesis (CHFS) followed by a short post heat treatment step. A range of particle sizes, dependent on synthesis conditions, were produced from 50 to 200 nm by varying reaction temperatures and the residence times in the process. The nanoparticles were characterised by powder X-ray diffraction, Raman and UV/Vis spectroscopy, transmission electron microscopy (TEM), scanning electron microscopy (SEM) and differential scanning calorimetry (DSC). The nanoparticles were highly crystalline with rod and sphere-like morphologies present in TEM micrographs, with the size of both the rod and spherical particles being highly dependent on both reaction temperature and residence time. SEM micrographs showed the surface of the powders produced from the CHFS process to be highly uniform. The samples were given a short post synthesis heat treatment to ensure that they were phase pure monoclinic VO2, which led to them exhibiting a large and reversible switch in optical properties (at near-IR wavelengths), which suggests that if such materials can be incorporated into coatings or in composites, they could be used for fenestration in architectural applications.

Hydrogen-doping induced reduction in the phase transition temperature of VO2: a first-principles study

The phase transition temperature of H-doped VO₂ is more sensitive to external strain as compared with that of pure VO₂.

Scalable hydrothermal synthesis of free-standing VO₂ nanowires in the M1 phase

VO2 nanostructures derived from solution-phase methods are often plagued by broadened and relatively diminished metal-insulator transitions and adventitious doping due to imperfect control of stoichiometry. Here, we demonstrate a stepwise scalable hydrothermal and annealing route for obtaining VO2 nanowires exhibiting almost 4 orders of magnitude abrupt (within 1 °C) metal-insulator transitions. The prepared nanowires have been characterized across their structural and electronic phase transitions using single-nanowire Raman microprobe analysis, ensemble differential scanning calorimetry, and single-nanowire electrical transport measurements. The electrical band gap is determined to be 600 meV and is consistent with the optical band gap of VO2, and the narrowness of differential scanning calorimetry profiles indicates homogeneity of stoichiometry. The preparation of high-quality free-standing nanowires exhibiting pronounced metal-insulator transitions by a solution-phase process allows for scalability, further solution-phase processing, incorporation within nanocomposites, and integration onto arbitrary substrates.

Continuously variable, electrically addressed beam splitter based on vanadium dioxide

Vanadium dioxide (VO(2)) is used to implement an electrically addressable beam splitter with continuously variable splitting ratios. The electrical control of temperature in a thin VO(2) layer is used to vary its transmission/reflection behavior. The technique is characterized for various incidence angles, s- and p-polarizations, and the wavelength range of 400-2000 nm. Splitting ratios continuously tunable over four orders of magnitude are reported.

Gas sensors based on one dimensional nanostructured metal-oxides: a review

Recently one dimensional (1-D) nanostructured metal-oxides have attracted much attention because of their potential applications in gas sensors. 1-D nanostructured metal-oxides provide high surface to volume ratio, while maintaining good chemical and thermal stabilities with minimal power consumption and low weight. In recent years, various processing routes have been developed for the synthesis of 1-D nanostructured metal-oxides such as hydrothermal, ultrasonic irradiation, electrospinning, anodization, sol-gel, molten-salt, carbothermal reduction, solid-state chemical reaction, thermal evaporation, vapor-phase transport, aerosol, RF sputtering, molecular beam epitaxy, chemical vapor deposition, gas-phase assisted nanocarving, UV lithography and dry plasma etching. A variety of sensor fabrication processing routes have also been developed. Depending on the materials, morphology and fabrication process the performance of the sensor towards a specific gas shows a varying degree of success. This article reviews and evaluates the performance of 1-D nanostructured metal-oxide gas sensors based on ZnO, SnO₂, TiO₂, In₂O₃, WO_x, AgVO₃, CdO, MoO₃, CuO, TeO₂ and Fe₂O₃. Advantages and disadvantages of each sensor are summarized, along with the associated sensing mechanism. Finally, the article concludes with some future directions of research.

VO2 Films by Polymer-Assisted Deposition: Investigation of Thermal Decomposition of Precursor Gel and Control of Phase Transition Temperatures

Polymer-assisted deposition (PAD) can be employed to prepare metal oxide films by coordination between metal ions and polymers instead of hydrolysis and condensation reactions, providing a cheap and scalable alternative for sol-gel process. This work involves a TG/DTA-MS study on the thermal decomposition of the precursor gel to form VO2 films. The results show that polymers influence effectively the achievement of thermochromic VO2, supporting the film-forming mechanism we proposed in a previous work. W-doping shifted the MIT temperature from 58 to 33 °C while remained 73% of the modulating ability in infrared transmittance at 2000 nm.

Electrospun ultralong hierarchical vanadium oxide nanowires with high performance for lithium ion batteries

Ultralong hierarchical vanadium oxide nanowires with diameter of 100-200 nm and length up to several millimeters were synthesized using the low-cost starting materials by electrospinning combined with annealing. The hierarchical nanowires were constructed from attached vanadium oxide nanorods of diameter around 50 nm and length of 100 nm. The initial and 50th discharge capacities of the ultralong hierarchical vanadium oxide nanowire cathodes are up to 390 and 201 mAh/g when the lithium ion battery cycled between 1.75 and 4.0 V. When the battery was cycled between 2.0 and 4.0 V, the initial and 50th discharge capacities of the nanowire cathodes are 275 and 187 mAh/g. Compared with self-aggregated short nanorods synthesized by hydrothermal method, the ultralong hierarchical vanadium oxide nanowires exhibit much higher capacity. This is due to the fact that self-aggregation of the unique nanorod-in-nanowire structures have been greatly reduced because of the attachment of nanorods in the ultralong nanowires, which can keep the effective contact areas of active materials, conductive additives, and electrolyte large and fully realize the advantage of nanomaterial-based cathodes. This demonstrates that ultralong hierarchical vanadium oxide nanowire is one of the most favorable nanostructures as cathodes for improving cycling performance of lithium ion batteries.

Single beta-AgVO3 nanowire H2S sensor

We report the electrical transport and H(2)S sensing properties of single beta-AgVO(3) nanowire device. beta-AgVO(3) nanowires were successfully prepared by ultrasonic treatment followed by hydrothermal reaction using V(2)O(5) sol. The individual beta-AgVO(3) nanowire exhibits a "threshold switching" phenomenon. High bias (i.e., 6 V for Au contacts) is required to initially switch the individual nanowire device from nonconductive to conductive, and it may be related to the formation of nanoscale metallic Ag when enough voltage is applied between the two electrodes. This novel nanomaterial shows good H(2)S sensing performances with short response and recovery time within 20 s, relatively low response concentration of 50 ppm, and good selectivity.

A novel solution process for the synthesis of VO2 thin films with excellent thermochromic properties

This article describes a novel and simple route to preparing VO(2) thermochromic films by using a VOCl(2) solution with poly(vinylpyrrolidone) (PVP). X-ray diffraction and Raman spectra showed that the VO(2) films deposited with PVP consisted of a nearly pure monoclinic/rutile (M/R) phase. Conversely, films prepared without PVP contained obviously impure crystalline phases. The as-prepared films with PVP showed excellent optical properties compared to those prepared by common gas-phase methods: an integral visible transmittance of 54.5% and an IR reduction (change in transmittance) of 41.5% at 2000 nm. The phase-transition temperatures were adjusted from 69 to 54 degrees C by tungsten doping. Equipment analyses revealed that PVP plays two roles in the film formation. First, it fundamentally acts as a film-forming promoter to improve physical gelation via interactions among oppositely charged carbonyl groups and amine groups of the polymer. Second, the negatively charged carbonyl groups can interact with VO(2+) to form a uniform mixed-gel film after solvent evaporation. Thus, the addition of PVP can stabilize the solution and improve the as-prepared film quality and phase purity. The current study suggests that the process has promise in applications of smart windows.

Gas sensor based on metal-insulator transition in VO2 nanowire thermistor

Using temperature driven sharp metal-insulator phase transition in single crystal VO(2) nanowires, the realization of a novel gas sensing concept has been tested. Varying the temperature of the nanowire close to the transition edge, the conductance of the nanowire becomes extremely responsive to the tiny changes in molecular composition, pressure, and temperature of the ambient gas environment. This gas sensing analog of the transition edge sensor radiometry used in astrophysics opens new opportunities in gas sensorics.