Hot Hole Transfer Increasing Polaron Yields in Hybrid Conjugated Polymer/PbS Blends

Long Lived Photoexcitation Dynamics in π-Conjugated Polymer/PbS Quantum Dot Blended Films for Photovoltaic Application

We used continuous wave photoinduced absorption (PIA) spectroscopy to investigate long-lived polarons in a blend of PbS quantum dot and regio-regular poly (3-hexylthiophene) (RR-P3HT). The charge transfer from RR-P3HT to PbS as well as from PbS to RR-P3HT were observed after changing the capping ligand of PbS from a long chain molecular to a short one. Therefore, PbS could be used to extend the working spectral range in hybrid solar cells with a proper capping ligand. However, we found that the recombination mechanism in the millisecond time region is dominated by the trap/defects in blended films, while it improves to a bimolecular recombination partially after ligand exchange. Our results suggest that passivating traps of nanocrystals by improving surface ligands will be crucial for relevant solar cell applications.

Electrical Detection of Quantum Dot Hot Electrons Generated via a Mn2+-Enhanced Auger Process

An all-solid-state quantum-dot-based photon-to-current conversion device is demonstrated that selectively detects the generation of hot electrons. Photoexcitation of Mn²⁺-doped CdS quantum dots embedded in the device is followed by efficient picosecond energy transfer to Mn²⁺ with a long-lived (millisecond) excited-state lifetime. Electrons injected into the QDs under applied bias then capture this energy via Auger de-excitation, generating hot electrons that possess sufficient energy to escape over a ZnS blocking layer, thereby producing current. This electrically detected hot-electron generation is correlated with a quench in the steady-state Mn²⁺ luminescence and the introduction of a new nonradiative excited-state decay process, consistent with electron-dopant Auger cross-relaxation. The device's efficiency at detecting hot-electron generation provides a model platform for the study of hot-electron ionization relevant to the development of novel photodetectors and alternative energy-conversion devices.

Subpicosecond Photon-Energy-Dependent Hole Transfer from PbS Quantum Dots to Conjugated Polymers

We use transient absorption (TA) spectroscopy to study the origin of photon-energy dependent hole transfer yields in blends of PbS quantum dots with the conjugated polymer poly(3-hexylthiophene-2,5-diyl) (P3HT). We selectively excite only the quantum dots at two different wavelengths and measure the polymer ground state bleach resulting from the transfer of photoexcited holes. The higher photon-energy pump shows a greater prompt yield of hole transfer compared to the lower photon-energy excitation, on time scales sufficient to out-compete hot carrier cooling in lead chalcogenide quantum dots. We interpret the results as evidence that the excess energy of nonthermalized, or "hot," excitons resulting from higher photon-energy excitation allows more efficient charge transfer to the polymer in these systems. The data also demonstrate slow charge transfer rates, up to ∼1 ns, of the relaxed excitations on the PbS dots. These findings help to clarify the role of excess photon energy and carrier relaxation dynamics on free carrier generation in donor/acceptor solar cells.

Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics

CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production of free charges that can contribute to the photocurrent in a device. We show that free mobile charges can be efficiently produced via CM in solids of strongly coupled PbSe QDs. Strong electronic coupling between the QDs resulted in a charge carrier mobility of the order of 1 cm(2) V(-1) s(-1). This mobility is sufficiently high so that virtually all electron-hole pairs escape from recombination. The impact of temperature on the CM efficiency in PbSe QD solids was also studied. We inferred that temperature has no observable effect on the rate of cooling of hot charges nor on the CM rate. We conclude that exploitation of CM requires that charges have sufficiently high mobility to escape from recombination. The contribution of CM to the efficiency of photovoltaic devices can be further enhanced by an increase of the CM efficiency above the energetic threshold of twice the band gap. For large-scale applications in photovoltaic devices, it is important to develop abundant and nontoxic materials that exhibit efficient CM.

Photocurrent enhancement of HgTe quantum dot photodiodes by plasmonic gold nanorod structures

The near-field effects of noble metal nanoparticles can be utilized to enhance the performance of inorganic/organic photosensing devices, such as solar cells and photodetectors. In this work, we developed a well-controlled fabrication strategy to incorporate Au nanostructures into HgTe quantum dot (QD)/ZnO heterojunction photodiode photodetectors. Through an electrostatic immobilization and dry transfer protocol, a layer of Au nanorods with uniform distribution and controllable density is embedded at different depths in the ZnO layer for systematic comparison. More than 80 and 240% increments of average short-circuit current density (Jsc) are observed in the devices with Au nanorods covered by ∼7.5 and ∼4.5 nm ZnO layers, respectively. A periodic finite-difference time-domain (FDTD) simulation model is developed to analyze the depth-dependent property and confirm the mechanism of plasmon-enhanced light absorption in the QD layer. The wavelength-dependent external quantum efficiency spectra suggest that the exciton dissociation and charge extraction efficiencies are also enhanced by the Au nanorods, likely due to local electric field effects. The photodetection performance of the photodiodes is characterized, and the results show that the plasmonic structure improves the overall infrared detectivity of the HgTe QD photodetectors without affecting their temporal response. Our fabrication strategy and theoretical and experimental findings provide useful insight into the applications of metal nanostructures to enhance the performance of organic/inorganic hybrid optoelectronic devices.