1
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Huang YQ, Kang N. Electron-hole asymmetric magnetotransport of graphene-colloidal quantum dot device. J Colloid Interface Sci 2024; 653:749-755. [PMID: 37748402 DOI: 10.1016/j.jcis.2023.09.078] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 07/29/2023] [Accepted: 09/11/2023] [Indexed: 09/27/2023]
Abstract
Interfacing graphene with other low-dimensional material has gained attentions recently due to its potential to stimulate new physics and device innovations for optoelectronic and electronic applications. Here, we exploit a solution-processed approach to introduce colloidal quantum dot (CQD) to the bilayer graphene device. The magnetotransport properties of the graphene device is drastically altered due to the presence of the CQD potential, leading to the observation of AB-like oscillation in the quantum Hall regime and screening of the intervalley scattering. The anomalous magnetotransport behavior is attributed to the coulombic scattering introduced by the CQDs and is shown to be highly asymmetric depending on the polarity of the transport carriers. These results prove the potential of such flexible method for engineering microscopic scattering process and performance of the graphene device that may lead to intriguing device application in such hybrid system.
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Affiliation(s)
- Y Q Huang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China; Department of Physics, Chemistry and Biology, Linköping University, S-581 83 Linköping, Sweden
| | - N Kang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China.
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2
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Qian F, Deng J, Xu C, Dong Y, Hu L, Fu G, Xie Y, Chang P, Sun J. Graphene-silicon-graphene Schottky junction photodetector with field effect structure. OPTICS EXPRESS 2022; 30:38503-38512. [PMID: 36258414 DOI: 10.1364/oe.469963] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2022] [Accepted: 09/19/2022] [Indexed: 06/16/2023]
Abstract
Graphene has unique advantages in ultrabroadband detection. However, nowadays graphene-based photodetectors cannot meet the requirements for practical applications due to their poor performance. Here, we report a graphene-silicon-graphene Schottky junction photodetector assisted by field effect. Two separate graphene sheets are located on both sides of the n-doped silicon to form two opposite lateral series heterojunctions with silicon, and a transparent top gate is designed to modulate the Schottky barrier. Low doping concentration of silicon and negative gate bias can significantly raise the barrier height. Under the combined action of these two measures, the barrier height increases from 0.39 eV to 0.77 eV. Accordingly, the performance of the photodetector has been greatly improved. The photoresponsivity of the optimized device is 2.6 A/W at 792 nm, 1.8 A/W at 1064 nm, and 0.42 A/W at 1550 nm, and the on/off photo-switching ratio reaches 104. Our work provides a feasible solution for the development of graphene-based optoelectronic devices.
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3
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Shin D, Kim HR, Hong BH. Gold nanoparticle-mediated non-covalent functionalization of graphene for field-effect transistors. NANOSCALE ADVANCES 2021; 3:1404-1412. [PMID: 36132857 PMCID: PMC9419278 DOI: 10.1039/d0na00603c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2020] [Accepted: 01/08/2021] [Indexed: 06/13/2023]
Abstract
Since its discovery, graphene has attracted much attention due to its unique electrical transport properties that can be applied to high-performance field-effect transistors (FETs). However, mounting chemical functionalities onto graphene inevitably involves the breaking of sp2 bonds, resulting in the degradation of the mechanical and electrical properties compared to pristine graphene. Here, we report a new strategy to chemically functionalize graphene for use in FETs without affecting the electrical performance. The key idea is to control the Fermi level of the graphene using the consecutive treatment of gold nanoparticles (AuNPs) and thiol-SAM (self-assembled monolayer) molecules, inducing positive and negative doping effects, respectively, by flipping the electric dipoles between AuNPs and SAMs. Based on this method, we demonstrate a Dirac voltage switcher on a graphene FET using heavy metal ions on functionalized graphene, where the carboxyl functional groups of the mediating SAMs efficiently form complexes with the metal ions and, as a result, the Dirac voltage can be positively shifted by different charge doping on graphene. We believe that the nanoparticle-mediated SAM functionalization of graphene can pave the way to developing high-performance chemical, environmental, and biological sensors that fully utilize the pristine properties of graphene.
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Affiliation(s)
- Dongha Shin
- Division of Fine Chemistry and Engineering, Pai Chai University Daejeon 35345 Republic of Korea
| | - Hwa Rang Kim
- Department of Chemistry, Seoul National University Seoul 08826 Korea
- Graphene Research Center & Graphene Square Inc., Advanced Institute of Convergence Technology, Seoul National University Suwon 16229 Korea
| | - Byung Hee Hong
- Department of Chemistry, Seoul National University Seoul 08826 Korea
- Graphene Research Center & Graphene Square Inc., Advanced Institute of Convergence Technology, Seoul National University Suwon 16229 Korea
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4
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Macheda F, Poncé S, Giustino F, Bonini N. Theory and Computation of Hall Scattering Factor in Graphene. NANO LETTERS 2020; 20:8861-8865. [PMID: 33226824 DOI: 10.1021/acs.nanolett.0c03874] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The Hall scattering factor, r, is a key quantity for establishing carrier concentration and drift mobility from Hall measurements; in experiments, it is usually assumed to be 1. In this paper, we use a combination of analytical and ab initio modeling to determine r in graphene. Although at high carrier densities r ≈ 1 in a wide temperature range, at low doping the temperature dependence of r is very strong with values as high as 4 below 300 K. These high values are due to the linear bands around the Dirac cone and the carrier scattering rates due to acoustic phonons. At higher temperatures, r can instead become as low as 0.5 due to the contribution of both holes and electrons and the role of optical phonons. Finally, we provide a simple analytical model to compute accurately r in graphene in a wide range of temperatures and carrier densities.
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Affiliation(s)
- Francesco Macheda
- Department of Physics, King's College London, Strand, London WC2R 2LS, United Kingdom
| | - Samuel Poncé
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
- Theory and Simulation of Materials (THEOS), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Feliciano Giustino
- Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, Texas 78712, United States
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Nicola Bonini
- Department of Physics, King's College London, Strand, London WC2R 2LS, United Kingdom
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5
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Tang Z, George A, Winter A, Kaiser D, Neumann C, Weimann T, Turchanin A. Optically Triggered Control of the Charge Carrier Density in Chemically Functionalized Graphene Field Effect Transistors. Chemistry 2020; 26:6473-6478. [PMID: 32150652 PMCID: PMC7318135 DOI: 10.1002/chem.202000431] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2020] [Revised: 02/22/2020] [Indexed: 01/14/2023]
Abstract
Field effect transistors (FETs) based on 2D materials are of great interest for applications in ultrathin electronic and sensing devices. Here we demonstrate the possibility to add optical switchability to graphene FETs (GFET) by functionalizing the graphene channel with optically switchable azobenzene molecules. The azobenzene molecules were incorporated to the GFET channel by building a van der Waals heterostructure with a carbon nanomembrane (CNM), which is used as a molecular interposer to attach the azobenzene molecules. Under exposure with 365 nm and 455 nm light, azobenzene molecules transition between cis and trans molecular conformations, respectively, resulting in a switching of the molecular dipole moment. Thus, the effective electric field acting on the GFET channel is tuned by optical stimulation and the carrier density is modulated.
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Affiliation(s)
- Zian Tang
- Institute of Physical ChemistryFriedrich Schiller University JenaLessingstraße 1007743JenaGermany
| | - Antony George
- Institute of Physical ChemistryFriedrich Schiller University JenaLessingstraße 1007743JenaGermany
| | - Andreas Winter
- Institute of Physical ChemistryFriedrich Schiller University JenaLessingstraße 1007743JenaGermany
| | - David Kaiser
- Institute of Physical ChemistryFriedrich Schiller University JenaLessingstraße 1007743JenaGermany
| | - Christof Neumann
- Institute of Physical ChemistryFriedrich Schiller University JenaLessingstraße 1007743JenaGermany
| | - Thomas Weimann
- Physikalisch-Technische Bundesanstalt (PTB)Bundesallee 10038116BraunschweigGermany
| | - Andrey Turchanin
- Institute of Physical ChemistryFriedrich Schiller University JenaLessingstraße 1007743JenaGermany
- Jena Center for Soft MatterPhilosophenweg 707743JenaGermany
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6
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Huang W, Wang F, Yin L, Cheng R, Wang Z, Sendeku MG, Wang J, Li N, Yao Y, He J. Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1908040. [PMID: 32080924 DOI: 10.1002/adma.201908040] [Citation(s) in RCA: 33] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2019] [Revised: 01/30/2020] [Indexed: 05/16/2023]
Abstract
Ferroelectric field-effect transistors (FeFETs) are one of the most interesting ferroelectric devices; however, they, usually suffer from low interface quality. The recently discovered 2D layered ferroelectric materials, combining with the advantages of van der Waals heterostructures (vdWHs), may be promising to fabricate high-quality FeFETs with atomically thin thickness. Here, dual-gated 2D ferroelectric vdWHs are constructed using MoS2 , hexagonal boron nitride (h-BN), and CuInP2 S6 (CIPS), which act as a high-performance nonvolatile memory and programmable rectifier. It is first noted that the insertion of h-BN and dual-gated coupling device configuration can significantly stabilize and effectively polarize ferroelectric CIPS. Through this design, the device shows a record-high performance with a large memory window, large on/off ratio (107 ), ultralow programming state current (10-13 A), and long-time endurance (104 s) as nonvolatile memory. As for programmable rectifier, a wide range of gate-tunable rectification behavior is observed. Moreover, the device exhibits a large rectification ratio (3 × 105 ) with stable retention under the programming state. This demonstrates the promising potential of ferroelectric vdWHs for new multifunctional ferroelectric devices.
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Affiliation(s)
- Wenhao Huang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Feng Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Lei Yin
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Ruiqing Cheng
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Zhenxing Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Marshet Getaye Sendeku
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Junjun Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Ningning Li
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Yuyu Yao
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Jun He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
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7
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Chemically Functionalised Graphene FET Biosensor for the Label-free Sensing of Exosomes. Sci Rep 2019; 9:13946. [PMID: 31558796 PMCID: PMC6763426 DOI: 10.1038/s41598-019-50412-9] [Citation(s) in RCA: 87] [Impact Index Per Article: 17.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/19/2018] [Accepted: 08/28/2019] [Indexed: 02/07/2023] Open
Abstract
A graphene field-effect transistor (gFET) was non-covalently functionalised with 1-pyrenebutyric acid N-hydroxysuccinimide ester and conjugated with anti-CD63 antibodies for the label-free detection of exosomes. Using a microfluidic channel, part of a graphene film was exposed to solution. The change in electrical properties of the exposed graphene created an additional minimum alongside the original Dirac point in the drain-source current (Ids) - back-gate voltage (Vg) curve. When phosphate buffered saline (PBS) was present in the channel, the additional minimum was present at a Vg lower than the original Dirac point and shifted with time when exosomes were introduced into the channel. This shift of the minimum from the PBS reference point reached saturation after 30 minutes and was observed for multiple exosome concentrations. Upon conjugation with an isotype control, sensor response to the highest concentration of exosomes was negligible in comparison to that with anti-CD63 antibody, indicating that the functionalised gFET can specifically detect exosomes at least down to 0.1 μg/mL and is sensitive to concentration. Such a gFET biosensor has not been used before for exosome sensing and could be an effective tool for the liquid-biopsy detection of exosomes as biomarkers for early-stage identification of diseases such as cancer.
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8
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Nasr JR, Schulman DS, Sebastian A, Horn MW, Das S. Mobility Deception in Nanoscale Transistors: An Untold Contact Story. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1806020. [PMID: 30430660 DOI: 10.1002/adma.201806020] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2018] [Revised: 10/12/2018] [Indexed: 05/19/2023]
Abstract
Mobility is a critical parameter that is routinely used for benchmarking the performance of field-effect transistors (FETs) based on novel nanomaterials. In fact, mobility values are often used to champion nanomaterials since high-performance devices necessitate high mobility values. The current belief is that the contacts can only limit the FET performance and hence the extracted mobility is an underestimation of the true channel mobility. However, here, such misconception is challenged through rigorous experimental effort, backed by numerical simulations, to demonstrate that overestimation of mobility occurs in commonly used geometries and in nanomaterials for which the contact interface, contact doping, and contact geometry play a pivotal role. In particular, dual-gated FETs based on multilayer MoS2 and WSe2 are used as case studies in order to elucidate and differentiate between intrinsic and extrinsic contact effects manifesting in the mobility extraction. The choice of 2D layered transition metal dichalcogenides (TMDCs) as the semiconducting channel is motivated by their potential to replace and/or coexist with Si-based aging FET technologies. However, the results are equally applicable to nanotube- and nanowire-based FETs, oxide semiconductors, and organic-material-based thin-film FETs.
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Affiliation(s)
- Joseph R Nasr
- Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802, USA
| | - Daniel S Schulman
- Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Amritanand Sebastian
- Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802, USA
| | - Mark W Horn
- Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802, USA
| | - Saptarshi Das
- Engineering Science and Mechanics, Pennsylvania State University, University Park, PA, 16802, USA
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9
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Maity A, Sui X, Jin B, Pu H, Bottum KJ, Huang X, Chang J, Zhou G, Lu G, Chen J. Resonance-Frequency Modulation for Rapid, Point-of-Care Ebola-Glycoprotein Diagnosis with a Graphene-Based Field-Effect Biotransistor. Anal Chem 2018; 90:14230-14238. [DOI: 10.1021/acs.analchem.8b03226] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Affiliation(s)
- Arnab Maity
- Department of Mechanical Engineering, University of Wisconsin—Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Xiaoyu Sui
- Department of Mechanical Engineering, University of Wisconsin—Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Bing Jin
- Department of Mechanical Engineering, University of Wisconsin—Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Haihui Pu
- Department of Mechanical Engineering, University of Wisconsin—Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Kai J. Bottum
- Department of Mechanical Engineering, University of Wisconsin—Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Xingkang Huang
- Department of Mechanical Engineering, University of Wisconsin—Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Jingbo Chang
- Department of Mechanical Engineering, University of Wisconsin—Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Guihua Zhou
- Department of Mechanical Engineering, University of Wisconsin—Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Ganhua Lu
- Department of Mechanical Engineering, University of Wisconsin—Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Junhong Chen
- Department of Mechanical Engineering, University of Wisconsin—Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
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10
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Shin JW, Kang MH, Oh S, Yang BC, Seong K, Ahn HS, Lee TH, An J. Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment. NANOTECHNOLOGY 2018; 29:195602. [PMID: 29461257 DOI: 10.1088/1361-6528/aab0fb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.
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Affiliation(s)
- Jeong Woo Shin
- Department of Manufacturing Systems and Design Engineering (MSDE), Seoul National University of Science and Technology (SeoulTech), Seoul 01811, Republic of Korea
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11
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Gao G, Wan B, Liu X, Sun Q, Yang X, Wang L, Pan C, Wang ZL. Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS 2 and Black Phosphorus. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1705088. [PMID: 29436069 DOI: 10.1002/adma.201705088] [Citation(s) in RCA: 37] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2017] [Revised: 12/15/2017] [Indexed: 05/12/2023]
Abstract
With the Moore's law hitting the bottleneck of scaling-down in size (below 10 nm), personalized and multifunctional electronics with an integration of 2D materials and self-powering technology emerge as a new direction of scientific research. Here, a tunable tribotronic dual-gate logic device based on a MoS2 field-effect transistor (FET), a black phosphorus FET and a sliding mode triboelectric nanogenerator (TENG) is reported. The triboelectric potential produced from the TENG can efficiently drive the transistors and logic devices without applying gate voltages. High performance tribotronic transistors are achieved with on/off ratio exceeding 106 and cutoff current below 1 pA μm-1 . Tunable electrical behaviors of the logic device are also realized, including tunable gains (improved to ≈13.8) and power consumptions (≈1 nW). This work offers an active, low-power-consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human-machine interfacing, data processing and transmission.
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Affiliation(s)
- Guoyun Gao
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bensong Wan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- Department of Physics, Beihang University, Beijing, 100191, China
| | - Xingqiang Liu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qijun Sun
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaonian Yang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Longfei Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
- School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
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12
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Zhan H, Cervenka J, Prawer S, Garrett DJ. Molecular detection by liquid gated Hall effect measurements of graphene. NANOSCALE 2018; 10:930-935. [PMID: 29265123 DOI: 10.1039/c7nr06330j] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Conventional electrical biosensing techniques include Cyclic Voltammetry (CV, amperometric) and ion-sensitive field effect transistors (ISFETs, potentiometric). However, CV is not able to detect electrochemically inactive molecules where there is no redox reaction in solution, and the resistance change in pristine ISFETs in response to low concentration solutions is not observable. Here, we show a very sensitive label-free biosensing method using Hall effect measurements on unfunctionalized graphene devices where the gate electrode is immersed in the solution containing the analyte of interest. This liquid gated Hall effect measurement (LGHM) technique is independent of redox reactions, and it enables the extraction of additional information regarding electrical properties from graphene as compared with ISFETs, which can be used to improve the sensitivity. We demonstrate that LGHM has a higher sensitivity than conventional biosensing methods for l-histidine in the pM range. The detection mechanism is proposed to be based on the interaction between the ions and graphene. The ions could induce asymmetry in electron-hole mobility and inhomogeneity in graphene, and they may also respond to the Hall effect measurement. Moreover, the calculation of capacitance values shows that the electrical double layer capacitance is dominant at relatively high gate voltages in our system, and this is useful for applications including biosensing, energy storage, and neural stimulation.
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Affiliation(s)
- Hualin Zhan
- Department of Chemical Engineering, The University of Melbourne, Parkville, VIC 3010, Australia.
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13
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Maity A, Sui X, Tarman CR, Pu H, Chang J, Zhou G, Ren R, Mao S, Chen J. Pulse-Driven Capacitive Lead Ion Detection with Reduced Graphene Oxide Field-Effect Transistor Integrated with an Analyzing Device for Rapid Water Quality Monitoring. ACS Sens 2017; 2:1653-1661. [PMID: 29087190 DOI: 10.1021/acssensors.7b00496] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Rapid and real-time detection of heavy metals in water with a portable microsystem is a growing demand in the field of environmental monitoring, food safety, and future cyber-physical infrastructure. Here, we report a novel ultrasensitive pulse-driven capacitance-based lead ion sensor using self-assembled graphene oxide (GO) monolayer deposition strategy to recognize the heavy metal ions in water. The overall field-effect transistor (FET) structure consists of a thermally reduced graphene oxide (rGO) channel with a thin layer of Al2O3 passivation as a top gate combined with sputtered gold nanoparticles that link with the glutathione (GSH) probe to attract Pb2+ ions in water. Using a preprogrammed microcontroller, chemo-capacitance based detection of lead ions has been demonstrated with this FET sensor. With a rapid response (∼1-2 s) and negligible signal drift, a limit of detection (LOD) < 1 ppb and excellent selectivity (with a sensitivity to lead ions 1 order of magnitude higher than that of interfering ions) can be achieved for Pb2+ measurements. The overall assay time (∼10 s) for background water stabilization followed by lead ion testing and calculation is much shorter than common FET resistance/current measurements (∼minutes) and other conventional methods, such as optical and inductively coupled plasma methods (∼hours). An approximate linear operational range (5-20 ppb) around 15 ppb (the maximum contaminant limit by US Environmental Protection Agency (EPA) for lead in drinking water) makes it especially suitable for drinking water quality monitoring. The validity of the pulse method is confirmed by quantifying Pb2+ in various real water samples such as tap, lake, and river water with an accuracy ∼75%. This capacitance measurement strategy is promising and can be readily extended to various FET-based sensor devices for other targets.
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Affiliation(s)
- Arnab Maity
- Department
of Mechanical Engineering, University of Wisconsin-Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Xiaoyu Sui
- Department
of Mechanical Engineering, University of Wisconsin-Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Chad R. Tarman
- Department
of Mechanical Engineering, University of Wisconsin-Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Haihui Pu
- Department
of Mechanical Engineering, University of Wisconsin-Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Jingbo Chang
- Department
of Mechanical Engineering, University of Wisconsin-Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Guihua Zhou
- Department
of Mechanical Engineering, University of Wisconsin-Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Ren Ren
- Department
of Mechanical Engineering, University of Wisconsin-Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
| | - Shun Mao
- State
Key Laboratory of Pollution Control and Resource Reuse, College of
Environmental Science and Engineering, Tongji University, 1239 Siping Road, Shanghai 200092, China
| | - Junhong Chen
- Department
of Mechanical Engineering, University of Wisconsin-Milwaukee, 3200 North Cramer Street, Milwaukee, Wisconsin 53211, United States
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14
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Balendra, Banday A, Murugavel S, Kanaujia PK, Prakash GV, Ramanan A. Calcium and Strontium Coordination Polymers Based on Rigid and Flexible Aromatic Dicarboxylates: Synthesis, Structure, Photoluminescence and Dielectric Properties. ChemistrySelect 2017. [DOI: 10.1002/slct.201701232] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Balendra
- Department of Chemistry; Indian Institute of Technology Delhi, Hauz Khas; New Delhi- 110016 India
| | - Azeem Banday
- Department of Physics and Astrophysics; University of Delhi; Delhi- 110007 India
| | - Sevi Murugavel
- Department of Physics and Astrophysics; University of Delhi; Delhi- 110007 India
| | - Pawan K. Kanaujia
- Nanophotonics Lab; Department of Physics; Indian Institute of Technology Delhi, Hauz Khas; New Delhi 110016 India
| | - G. Vijaya Prakash
- Nanophotonics Lab; Department of Physics; Indian Institute of Technology Delhi, Hauz Khas; New Delhi 110016 India
| | - Arunachalam Ramanan
- Department of Chemistry; Indian Institute of Technology Delhi, Hauz Khas; New Delhi- 110016 India
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15
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Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene. Sci Rep 2017; 7:3336. [PMID: 28611452 PMCID: PMC5469745 DOI: 10.1038/s41598-017-03264-0] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2017] [Accepted: 04/25/2017] [Indexed: 11/09/2022] Open
Abstract
Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of the fabricated device confirms the formation of a p-n junction. At low temperatures, when the electrolyte is frozen intentionally, the photovoltage exhibits a six-fold pattern indicative of the hot electron induced photothermoelectric effect that has also been seen in graphene p-n junctions made using metallic gates. We have observed that the photovoltage increases with decreasing temperature indicating a dominant role of supercollision scattering. Our technique can also be extended to other 2D materials and to finer features that will lead to p-n junctions which span a large area, like a superlattice, that can generate a larger photoresponse. Our work creating abrupt p-n junctions is distinct from previous works that use a source-drain bias voltage with a single ionic gate creating a spatially graded p-n junction.
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16
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Yu YJ, Lee GH, Choi JI, Shim YS, Lee CH, Kang SJ, Lee S, Rim KT, Flynn GW, Hone J, Kim YH, Kim P, Nuckolls C, Ahn S. Epitaxially Self-Assembled Alkane Layers for Graphene Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1603925. [PMID: 27905154 DOI: 10.1002/adma.201603925] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2016] [Revised: 10/17/2016] [Indexed: 06/06/2023]
Abstract
The epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO2 surface toward the well-ordered and rigid alkane self-assembled layers.
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Affiliation(s)
- Young-Jun Yu
- ICT Materials and Components Basic Research Group, Electronics and Telecommunications Research Institute (ETRI), Daejeon, 34129, Korea
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea
| | - Ji Il Choi
- Graduate School of Energy, Environment, Water, and Sustainability, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Korea
| | - Yoon Su Shim
- Graduate School of Energy, Environment, Water, and Sustainability, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Korea
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 136-701, Korea
| | - Seok Ju Kang
- School of Energy and Chemical Engineering, UNIST, Ulsan, 689-798, Korea
| | - Sunwoo Lee
- Department of Electrical Engineering, Columbia University, New York, NY, 10027, USA
| | - Kwang Taeg Rim
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - George W Flynn
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA
| | - Yong-Hoon Kim
- Graduate School of Energy, Environment, Water, and Sustainability, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Korea
| | - Philip Kim
- Department of Physics, Harvard University, Cambridge, MA, 02138, USA
| | - Colin Nuckolls
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Seokhoon Ahn
- Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeonbuk, 565-905, Korea
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17
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Tien DH, Park JY, Kim KB, Lee N, Seo Y. Characterization of Graphene-based FET Fabricated using a Shadow Mask. Sci Rep 2016; 6:25050. [PMID: 27169620 PMCID: PMC4864380 DOI: 10.1038/srep25050] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2015] [Accepted: 04/11/2016] [Indexed: 11/09/2022] Open
Abstract
To pattern electrical metal contacts, electron beam lithography or photolithography are commonly utilized, and these processes require polymer resists with solvents. During the patterning process the graphene surface is exposed to chemicals, and the residue on the graphene surface was unable to be completely removed by any method, causing the graphene layer to be contaminated. A lithography free method can overcome these residue problems. In this study, we use a micro-grid as a shadow mask to fabricate a graphene based field-effect-transistor (FET). Electrical measurements of the graphene based FET samples are carried out in air and vacuum. It is found that the Dirac peaks of the graphene devices on SiO2 or on hexagonal boron nitride (hBN) shift from a positive gate voltage region to a negative region as air pressure decreases. In particular, the Dirac peaks shift very rapidly when the pressure decreases from ~2 × 10−3 Torr to ~5 × 10−5 Torr within 5 minutes. These Dirac peak shifts are known as adsorption and desorption of environmental gases, but the shift amounts are considerably different depending on the fabrication process. The high gas sensitivity of the device fabricated by shadow mask is attributed to adsorption on the clean graphene surface.
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Affiliation(s)
- Dung Hoang Tien
- Faculty of Nanotechnology &Advanced Materials, HMC, and GRI, Sejong University, Seoul 143-747, South Korea
| | - Jun-Young Park
- Faculty of Nanotechnology &Advanced Materials, HMC, and GRI, Sejong University, Seoul 143-747, South Korea
| | - Ki Buem Kim
- Faculty of Nanotechnology &Advanced Materials, HMC, and GRI, Sejong University, Seoul 143-747, South Korea
| | - Naesung Lee
- Faculty of Nanotechnology &Advanced Materials, HMC, and GRI, Sejong University, Seoul 143-747, South Korea
| | - Yongho Seo
- Faculty of Nanotechnology &Advanced Materials, HMC, and GRI, Sejong University, Seoul 143-747, South Korea
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18
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Liu X, Qu D, Ryu J, Ahmed F, Yang Z, Lee D, Yoo WJ. P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:2345-51. [PMID: 26808483 DOI: 10.1002/adma.201505154] [Citation(s) in RCA: 87] [Impact Index Per Article: 10.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2015] [Revised: 11/28/2015] [Indexed: 05/23/2023]
Abstract
A high-performance multilayer MoS2 p-type field-effect transistor is realized via controllable chemical doping, which shows an excellent on/off ratio of 10(9) and a maximum hole mobility of 132 cm(2) V(-1) s(-1) at 133 K. The developed technique will enable 2D materials to be used for future high-efficiency and low-power semiconductor device applications.
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Affiliation(s)
- Xiaochi Liu
- Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea
| | - Deshun Qu
- Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea
| | - Jungjin Ryu
- Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea
| | - Faisal Ahmed
- Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea
| | - Zheng Yang
- Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea
| | - Daeyeong Lee
- Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea
| | - Won Jong Yoo
- Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea
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19
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Morrow WK, Pearton SJ, Ren F. Review of Graphene as a Solid State Diffusion Barrier. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2016; 12:120-134. [PMID: 26523843 DOI: 10.1002/smll.201501120] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2015] [Revised: 05/29/2015] [Indexed: 06/05/2023]
Abstract
Conventional thin-film diffusion barriers consist of 3D bulk films with high chemical and thermal stability. The purpose of the barrier material is to prevent intermixing or penetration from the two materials that encase it. Adhesion to both top and bottom materials is critical to the success of the barrier. Here, the effectiveness of a single atomic layer of graphene as a solid-state diffusion barrier for common metal schemes used in microelectronics is reviewed, and specific examples are discussed. Initial studies of electrical contacts to graphene show a distinct separation in behavior between metallic groups that strongly or weakly bond to it. The two basic classes of metal reactions with graphene are either physisorbed metals, which bond weakly with graphene, or chemisorbed metals, which bond strongly to graphene. For graphene diffusion barrier testing on Si substrates, an effective barrier can be achieved through the formation of a carbide layer with metals that are chemisorbed. For physisorbed metals, the barrier failure mechanism is loss of adhesion at the metal–graphene interface. A graphene layer encased between two metal layers, in certain cases, can increase the binding energy of both films with graphene, however, certain combinations of metal films are detrimental to the bonding with graphene. While the prospects for graphene's future as a solid-state diffusion barrier are positive, there are open questions, and areas for future research are discussed. A better understanding of the mechanisms which influence graphene's ability to be an effective diffusion barrier in microelectronic applications is required, and additional experiments are needed on a broader range of metals, as well as common metal stack contact structures used in microelectronic applications. The role of defects in the graphene is also a key area, since they will probably influence the barrier properties.
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Affiliation(s)
- Wayne K Morrow
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32606, USA
| | - Stephen J Pearton
- Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32606, USA
| | - Fan Ren
- Department of Chemical Engineering, University of Florida, Gainesville, FL, 32606, USA
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20
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Bartolomeo AD, Giubileo F, Romeo F, Sabatino P, Carapella G, Iemmo L, Schroeder T, Lupina G. Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics. NANOTECHNOLOGY 2015; 26:475202. [PMID: 26535591 DOI: 10.1088/0957-4484/26/47/475202] [Citation(s) in RCA: 24] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
We fabricate back-gated field effect transistors using niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10(-4) mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.
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Affiliation(s)
- Antonio Di Bartolomeo
- Dipartimento di Fisica 'E.R. Caianiello' and Centro Interdipartimentale NanoMates, Università degli Studi di Salerno, Fisciano, Salerno, Italy. CNR-SPIN, Fisciano, Salerno, Italy
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21
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Ishida S, Anno Y, Takeuchi M, Matsuoka M, Takei K, Arie T, Akita S. Highly photosensitive graphene field-effect transistor with optical memory function. Sci Rep 2015; 5:15491. [PMID: 26483089 PMCID: PMC4611878 DOI: 10.1038/srep15491] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/30/2015] [Accepted: 09/29/2015] [Indexed: 12/02/2022] Open
Abstract
Graphene is a promising material for use in photodetectors for the ultrawide wavelength region: from ultraviolet to terahertz. Nevertheless, only the 2.3% light absorption of monolayer graphene and fast recombination time of photo-excited charge restrict its sensitivity. To enhance the photosensitivity, hybridization of photosensitive material and graphene has been widely studied, where the accumulated photo-excited charge adjacent to the graphene channel modifies the Fermi level of graphene. However, the charge accumulation process slows the response to around a few tens of seconds to minutes. In contrast, a charge accumulation at the contact would induce the efficient light-induced modification of the contact resistance, which would enhance its photosensitivity. Herein, we demonstrate a highly photosensitive graphene field-effect transistor with noise-equivalent power of ~3 × 10−15 W/Hz1/2 and with response time within milliseconds at room temperature, where the Au oxide on Au electrodes modulates the contact resistance because of the light-assisted relaxation of the trapped charge at the contact. Additionally, this light-induced relaxation imparts an optical memory function with retention time of ~5 s. These findings are expected to open avenues to realization of graphene photodetectors with high sensitivity toward single photon detection with optical memory function.
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Affiliation(s)
- Shohei Ishida
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan
| | - Yuki Anno
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan
| | - Masato Takeuchi
- Department of Applied Chemistry, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan
| | - Masaya Matsuoka
- Department of Applied Chemistry, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan
| | - Kuniharu Takei
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan
| | - Takayuki Arie
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan
| | - Seiji Akita
- Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan
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22
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Srivastava PK, Ghosh S. Defect engineering as a versatile route to estimate various scattering mechanisms in monolayer graphene on solid substrates. NANOSCALE 2015; 7:16079-16086. [PMID: 26372472 DOI: 10.1039/c5nr04293c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
It is known that the experimental conditions and growth methods determine the different carrier scatterings responsible for large variation of carrier mobility in graphene monolayers. Here we present a systematic investigation on various possible scattering mechanisms responsible for limiting the carrier mobility in graphene on a solid substrate, like SiO2. This has been possible by defect engineering in graphene monolayers obtained by liquid phase exfoliation of graphite in polar and non-polar solvents with the dielectric constant varying from 2.5 to 64. Lattice defects in graphene monolayers have been characterized by scanning tunnelling microscopy and Raman spectroscopy. Correlation between the results obtained from electrical measurements and the information obtained from Raman spectra have revealed different scattering mechanisms responsible for deciding the carrier mobility. It has been shown that remote interfacial phonons in SiO2 are responsible for limiting the carrier mobility at room temperature whereas, substrate impurities and Raman active point defects in the graphene lattice are the dominant scatterers for limiting the mobility at low temperatures.
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Affiliation(s)
- Pawan Kumar Srivastava
- Electronic Materials and Device Laboratory, School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067, India.
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23
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Sharma P, Mišković ZL. Ionic screening of charged impurities in electrolytically gated graphene: A partially linearized Poisson-Boltzmann model. J Chem Phys 2015; 143:134118. [DOI: 10.1063/1.4932179] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Affiliation(s)
- P. Sharma
- Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Z. L. Mišković
- Department of Applied Mathematics, Waterloo Institute for Nanotechnology, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
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24
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Liu Y, Wu H, Cheng HC, Yang S, Zhu E, He Q, Ding M, Li D, Guo J, Weiss NO, Huang Y, Duan X. Toward barrier free contact to molybdenum disulfide using graphene electrodes. NANO LETTERS 2015; 15:3030-3034. [PMID: 25879371 DOI: 10.1021/nl504957p] [Citation(s) in RCA: 184] [Impact Index Per Article: 20.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) have attracted tremendous interest as a new class of electronic materials. However, there are considerable challenges in making reliable contacts to these atomically thin materials. Here we present a new strategy by using graphene as the back electrodes to achieve ohmic contact to MoS2. With a finite density of states, the Fermi level of graphene can be readily tuned by a gate potential to enable a nearly perfect band alignment with MoS2. We demonstrate for the first time a transparent contact to MoS2 with zero contact barrier and linear output behavior at cryogenic temperatures (down to 1.9 K) for both monolayer and multilayer MoS2. Benefiting from the barrier-free transparent contacts, we show that a metal-insulator transition can be observed in a two-terminal MoS2 device, a phenomenon that could be easily masked by Schottky barriers found in conventional metal-contacted MoS2 devices. With further passivation by boron nitride (BN) encapsulation, we demonstrate a record-high extrinsic (two-terminal) field effect mobility up to 1300 cm(2)/(V s) in MoS2 at low temperature.
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Affiliation(s)
- Yuan Liu
- †Department of Materials Science and Engineering, ‡Department of Chemistry and Biochemistry, and §California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
| | - Hao Wu
- †Department of Materials Science and Engineering, ‡Department of Chemistry and Biochemistry, and §California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
| | - Hung-Chieh Cheng
- †Department of Materials Science and Engineering, ‡Department of Chemistry and Biochemistry, and §California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
| | - Sen Yang
- †Department of Materials Science and Engineering, ‡Department of Chemistry and Biochemistry, and §California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
| | - Enbo Zhu
- †Department of Materials Science and Engineering, ‡Department of Chemistry and Biochemistry, and §California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
| | - Qiyuan He
- †Department of Materials Science and Engineering, ‡Department of Chemistry and Biochemistry, and §California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
| | - Mengning Ding
- †Department of Materials Science and Engineering, ‡Department of Chemistry and Biochemistry, and §California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
| | - Dehui Li
- †Department of Materials Science and Engineering, ‡Department of Chemistry and Biochemistry, and §California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
| | - Jian Guo
- †Department of Materials Science and Engineering, ‡Department of Chemistry and Biochemistry, and §California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
| | - Nathan O Weiss
- †Department of Materials Science and Engineering, ‡Department of Chemistry and Biochemistry, and §California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
| | - Yu Huang
- †Department of Materials Science and Engineering, ‡Department of Chemistry and Biochemistry, and §California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
| | - Xiangfeng Duan
- †Department of Materials Science and Engineering, ‡Department of Chemistry and Biochemistry, and §California Nanosystems Institute, University of California, Los Angeles, California 90095, United States
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25
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Zhu Y, Wang C, Petrone N, Yu J, Nuckolls C, Hone J, Lin Q. A solid dielectric gated graphene nanosensor in electrolyte solutions. APPLIED PHYSICS LETTERS 2015; 106:123503. [PMID: 28074076 PMCID: PMC4376749 DOI: 10.1063/1.4916341] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2015] [Accepted: 03/16/2015] [Indexed: 05/23/2023]
Abstract
This letter presents a graphene field effect transistor (GFET) nanosensor that, with a solid gate provided by a high-κ dielectric, allows analyte detection in liquid media at low gate voltages. The gate is embedded within the sensor and thus is isolated from a sample solution, offering a high level of integration and miniaturization and eliminating errors caused by the liquid disturbance, desirable for both in vitro and in vivo applications. We demonstrate that the GFET nanosensor can be used to measure pH changes in a range of 5.3-9.3. Based on the experimental observations and quantitative analysis, the charging of an electrical double layer capacitor is found to be the major mechanism of pH sensing.
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Affiliation(s)
- Yibo Zhu
- Department of Mechanical Engineering, Columbia University , New York, New York 10027, USA
| | | | - Nicholas Petrone
- Department of Mechanical Engineering, Columbia University , New York, New York 10027, USA
| | - Jaeeun Yu
- Department of Chemistry, Columbia University , New York, New York 10027, USA
| | - Colin Nuckolls
- Department of Chemistry, Columbia University , New York, New York 10027, USA
| | - James Hone
- Department of Mechanical Engineering, Columbia University , New York, New York 10027, USA
| | - Qiao Lin
- Department of Mechanical Engineering, Columbia University , New York, New York 10027, USA
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26
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Noh YJ, Joh HI, Yu J, Hwang SH, Lee S, Lee CH, Kim SY, Youn JR. Ultra-high dispersion of graphene in polymer composite via solvent free fabrication and functionalization. Sci Rep 2015; 5:9141. [PMID: 25771823 PMCID: PMC4360639 DOI: 10.1038/srep09141] [Citation(s) in RCA: 82] [Impact Index Per Article: 9.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/18/2014] [Accepted: 02/10/2015] [Indexed: 11/23/2022] Open
Abstract
The drying process of graphene-polymer composites fabricated by solution-processing
for excellent dispersion is time consuming and suffers from a restacking problem.
Here, we have developed an innovative method to fabricate polymer composites
with well dispersed graphene particles in the matrix resin by using solvent
free powder mixing and in-situ polymerization of a low viscosity oligomer
resin. We also prepared composites filled with up to 20 wt% of graphene
particles by the solvent free process while maintaining a high degree of dispersion.
The electrical conductivity of the composite, one of the most significant
properties affected by the dispersion, was consistent with the theoretically
obtained effective electrical conductivity based on the mean field micromechanical
analysis with the Mori-Tanaka model assuming ideal dispersion. It can be confirmed
by looking at the statistical results of the filler-to-filler distance obtained
from the digital processing of the fracture surface images that the various
oxygenated functional groups of graphene oxide can help improve the dispersion
of the filler and that the introduction of large phenyl groups to the graphene
basal plane has a positive effect on the dispersion.
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Affiliation(s)
- Ye Ji Noh
- Carbon Convergence Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Jeonbuk. 565-905, Republic of Korea
| | - Han-Ik Joh
- Carbon Convergence Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Jeonbuk. 565-905, Republic of Korea
| | - Jaesang Yu
- Carbon Convergence Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Jeonbuk. 565-905, Republic of Korea
| | - Soon Hyoun Hwang
- Research Institute of Advanced Materials (RIAM), Department of Materials Science and Engineering, Seoul National University, Seoul. 151-742, Republic of Korea
| | - Sungho Lee
- Carbon Convergence Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Jeonbuk. 565-905, Republic of Korea
| | - Cheol Ho Lee
- Carbon Convergence Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Jeonbuk. 565-905, Republic of Korea
| | - Seong Yun Kim
- 1] Carbon Convergence Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Jeonbuk. 565-905, Republic of Korea [2] Nanomaterials Science and Engineering, Korea University of Science and Technology (UST), Daejeon 305-350, Republic of Korea
| | - Jae Ryoun Youn
- Research Institute of Advanced Materials (RIAM), Department of Materials Science and Engineering, Seoul National University, Seoul. 151-742, Republic of Korea
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Kim YJ, Lee YG, Jung U, Lee S, Lee SK, Lee BH. A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors. NANOSCALE 2015; 7:4013-4019. [PMID: 25672592 DOI: 10.1039/c4nr06397j] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The operation of chemical vapor-deposited (CVD) graphene field-effect transistors (GFETs) is highly sensitive to environmental factors such as the substrate, polymer residues, ambient condition, and other species adsorbed on the graphene surface due to their high defect density. As a result, CVD GFETs often exhibit a large hysteresis and time-dependent instability. These problems become a major roadblock in the systematic study of graphene devices. We report a facile process to alleviate these problems, which can be used to fabricate stable high performance CVD GFETs with symmetrical current-voltage (I-V) characteristics and an effective carrier mobility over 6000 cm(2) V(-1) s(-1). This process combined a few steps of processes in sequence including pre-annealing in a vacuum, depositing a passivation layer, and the final annealing in a vacuum, and eliminated ∼50% of charging sources primarily originating from water reduction reactions.
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Affiliation(s)
- Yun Ji Kim
- Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea.
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28
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Tsai HS, Lai CC, Medina H, Lin SM, Shih YC, Chen YZ, Liang JH, Chueh YL. Scalable graphene synthesised by plasma-assisted selective reaction on silicon carbide for device applications. NANOSCALE 2014; 6:13861-13869. [PMID: 25307846 DOI: 10.1039/c4nr04486j] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Graphene, a two-dimensional material with honeycomb arrays of carbon atoms, has shown outstanding physical properties that make it a promising candidate material for a variety of electronic applications. To date, several issues related to the material synthesis and device fabrication need to be overcome. Despite the fact that large-area graphene films synthesised by chemical vapour deposition (CVD) can be grown with relatively few defects, the required transfer process creates wrinkles and polymer residues that greatly reduce its performance in device applications. Graphene synthesised on silicon carbide (SiC) has shown outstanding mobility and has been successfully used to develop ultra-high frequency transistors; however, this fabrication method is limited due to the use of costly ultra-high vacuum (UHV) equipment that can reach temperatures over 1500 °C. Here, we show a simple and novel approach to synthesise graphene on SiC substrates that greatly reduces the temperature and vacuum requirements and allows the use of equipment commonly used in the semiconductor processing industry. In this work, we used plasma treatment followed by annealing in order to obtain large-scale graphene films from bulk SiC. After exposure to N2 plasma, the annealing process promotes the reaction of nitrogen ions with Si and the simultaneous condensation of C on the surface of SiC. Eventually, a uniform, large-scale, n-type graphene film with remarkable transport behaviour on the SiC wafer is achieved. Furthermore, graphene field effect transistors (FETs) with high carrier mobilities on SiC were also demonstrated in this study.
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Affiliation(s)
- Hsu-Sheng Tsai
- Department of Material Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
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29
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Fu W, Nef C, Tarasov A, Wipf M, Stoop R, Knopfmacher O, Weiss M, Calame M, Schönenberger C. High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization. NANOSCALE 2013; 5:12104-12110. [PMID: 24142362 DOI: 10.1039/c3nr03940d] [Citation(s) in RCA: 24] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Noncovalent functionalization is a well-known nondestructive process for property engineering of carbon nanostructures, including carbon nanotubes and graphene. However, it is not clear to what extend the extraordinary electrical properties of these carbon materials can be preserved during the process. Here, we demonstrated that noncovalent functionalization can indeed delivery graphene field-effect transistors (FET) with fully preserved mobility. In addition, these high-mobility graphene transistors can serve as a promising platform for biochemical sensing applications.
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Affiliation(s)
- W Fu
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
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30
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Li B, Klekachev AV, Cantoro M, Huyghebaert C, Stesmans A, Asselberghs I, De Gendt S, De Feyter S. Toward tunable doping in graphene FETs by molecular self-assembled monolayers. NANOSCALE 2013; 5:9640-9644. [PMID: 23827941 DOI: 10.1039/c3nr01255g] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
In this paper, we report the formation of self-assembled monolayers (SAMs) of oleylamine (OA) on highly oriented pyrolytic graphite (HOPG) and graphene surfaces and demonstrate the potential of using such organic SAMs to tailor the electronic properties of graphene. Molecular resolution Atomic Force Microscopy (AFM) and Scanning Tunneling Microscopy (STM) images reveal the detailed molecular ordering. The electrical measurements show that OA strongly interacts with graphene leading to n-doping effects in graphene devices. The doping levels are tunable by varying the OA deposition conditions. Importantly, neither hole nor electron mobilities are decreased by the OA modification. As a benefit from this noncovalent modification strategy, the pristine characteristics of the device are recoverable upon OA removal. From this study, one can envision the possibility to correlate the graphene-based device performance with the molecular structure and supramolecular ordering of the organic dopant.
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Affiliation(s)
- Bing Li
- Division of Molecular Imaging and Photonics, Department of Chemistry, KU Leuven, Celestijnenlaan 200F, B-3001 Leuven, Belgium.
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31
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Radisavljevic B, Kis A. Mobility engineering and a metal-insulator transition in monolayer MoS₂. NATURE MATERIALS 2013; 12:815-20. [PMID: 23793161 DOI: 10.1038/nmat3687] [Citation(s) in RCA: 720] [Impact Index Per Article: 65.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2013] [Accepted: 05/15/2013] [Indexed: 04/14/2023]
Abstract
Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides MoS₂ or WSe₂ are gaining in importance as promising channel materials for field-effect transistors (FETs). The presence of a direct bandgap in monolayer MoS₂ due to quantum-mechanical confinement allows room-temperature FETs with an on/off ratio exceeding 10(8). The presence of high- κ dielectrics in these devices enhanced their mobility, but the mechanisms are not well understood. Here, we report on electrical transport measurements on MoS₂ FETs in different dielectric configurations. The dependence of mobility on temperature shows clear evidence of the strong suppression of charged-impurity scattering in dual-gate devices with a top-gate dielectric. At the same time, phonon scattering shows a weaker than expected temperature dependence. High levels of doping achieved in dual-gate devices also allow the observation of a metal-insulator transition in monolayer MoS₂ due to strong electron-electron interactions. Our work opens up the way to further improvements in 2D semiconductor performance and introduces MoS₂ as an interesting system for studying correlation effects in mesoscopic systems.
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Affiliation(s)
- Branimir Radisavljevic
- Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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32
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Mun JH, Cho BJ. Synthesis of monolayer graphene having a negligible amount of wrinkles by stress relaxation. NANO LETTERS 2013; 13:2496-2499. [PMID: 23713830 DOI: 10.1021/nl4005578] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
For the chemical vapor deposition (CVD) of graphene, the grain growth of the catalyst metal and thereby surface roughening are unavoidable during the high temperature annealing for the graphene synthesis. Considering that nanoscale wrinkles and poor uniformity of synthesized graphene originate from the roughened metal surface, improving surface flatness of metal thin films is one of the key factors to synthesize high quality graphene. Here, we introduce a new method for graphene synthesis for fewer wrinkle formation on a catalyst metal. The method utilizes a reduced graphene oxide (rGO) interfacial layer between the metal film and the wafer substrate. The rGO interlayer releases the residual stress of the metal thin film and thereby suppresses stress-induced metal grain growth. This technique makes it possible to use much thinner nickel films, leading to a dramatic suppression of RMS roughness (~3 nm) of the metal surface even after high temperature annealing. It also endows excellent control of the graphene thickness due to the reduced amount of total carbon in the thin nickel film. The synthesized graphene layer having negligible amount of wrinkles exhibits excellent thickness uniformity (91% coverage of monolayer) and very high carrier mobility of ~15,000 cm(2)/V·s.
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Affiliation(s)
- Jeong Hun Mun
- Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-Ro, Yuseong, Daejeon 305-701, Republic of Korea
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33
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Fuhrer MS, Hone J. Measurement of mobility in dual-gated MoS₂ transistors. NATURE NANOTECHNOLOGY 2013; 8:146-7. [PMID: 23459545 DOI: 10.1038/nnano.2013.30] [Citation(s) in RCA: 182] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2023]
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34
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Hui YY, Tai G, Sun Z, Xu Z, Wang N, Yan F, Lau SP. n- and p-Type modulation of ZnO nanomesh coated graphene field effect transistors. NANOSCALE 2012; 4:3118-3122. [PMID: 22504661 DOI: 10.1039/c2nr30249g] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Periodic zinc oxide (ZnO) nanomeshes of different thicknesses were deposited on single-layer graphene to form back-gated field effect transistors (GFETs). The GFETs exhibit tunable electronic properties, featuring n- and p-type characteristics by merely controlling the thickness of the ZnO nanomesh layer. Furthermore, the effect of thermal strain on the GFETs from the substrate is suppressed by the ZnO nanomesh, which improves the thermal stability of the GFETs. This nanopatterning technique could modulate the electronic properties of the GFETs effectively.
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Affiliation(s)
- Yeung Yu Hui
- Department of Applied Physics and Materials Research Centre, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China
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35
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Hong H, Yang K, Zhang Y, Engle JW, Feng L, Yang Y, Nayak TR, Goel S, Bean J, Theuer CP, Barnhart TE, Liu Z, Cai W. In vivo targeting and imaging of tumor vasculature with radiolabeled, antibody-conjugated nanographene. ACS NANO 2012; 6:2361-70. [PMID: 22339280 PMCID: PMC3314116 DOI: 10.1021/nn204625e] [Citation(s) in RCA: 159] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Herein we demonstrate that nanographene can be specifically directed to the tumor neovasculature in vivo through targeting of CD105 (i.e., endoglin), a vascular marker for tumor angiogenesis. The covalently functionalized nanographene oxide (GO) exhibited excellent stability and target specificity. Pharmacokinetics and tumor targeting efficacy of the GO conjugates were investigated with serial noninvasive positron emission tomography imaging and biodistribution studies, which were validated by in vitro, in vivo, and ex vivo experiments. The incorporation of an active targeting ligand (TRC105, a monoclonal antibody that binds to CD105) led to significantly improved tumor uptake of functionalized GO, which was specific for the neovasculature with little extravasation, warranting future investigation of these GO conjugates for cancer-targeted drug delivery and/or photothermal therapy to enhance therapeutic efficacy. Since poor extravasation is a major hurdle for nanomaterial-based tumor targeting in vivo, this study also establishes CD105 as a promising vascular target for future cancer nanomedicine.
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MESH Headings
- Animals
- Antibodies, Monoclonal/chemistry
- Antibodies, Monoclonal/immunology
- Antigens, CD/immunology
- Cell Line, Tumor
- Copper Radioisotopes
- Endoglin
- Graphite/chemistry
- Heterocyclic Compounds/chemistry
- Heterocyclic Compounds, 1-Ring
- Human Umbilical Vein Endothelial Cells/metabolism
- Humans
- Immunoconjugates/chemistry
- Immunoconjugates/metabolism
- Immunoconjugates/pharmacokinetics
- Isotope Labeling
- Mammary Neoplasms, Experimental/blood supply
- Mammary Neoplasms, Experimental/diagnosis
- Mammary Neoplasms, Experimental/metabolism
- Mammary Neoplasms, Experimental/therapy
- Mice
- Molecular Imaging/methods
- Nanoconjugates/chemistry
- Neovascularization, Pathologic/diagnostic imaging
- Neovascularization, Pathologic/metabolism
- Oxides/chemistry
- Positron-Emission Tomography
- Receptors, Cell Surface/immunology
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Affiliation(s)
- Hao Hong
- Department of Radiology, University of Wisconsin - Madison, Madison, WI, USA
| | - Kai Yang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials Laboratory (FUNSOM), Soochow University, Suzhou, Jiangsu, China
| | - Yin Zhang
- Department of Medical Physics, University of Wisconsin - Madison, Madison, WI, USA
| | - Jonathan W. Engle
- Department of Medical Physics, University of Wisconsin - Madison, Madison, WI, USA
| | - Liangzhu Feng
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials Laboratory (FUNSOM), Soochow University, Suzhou, Jiangsu, China
| | - Yunan Yang
- Department of Radiology, University of Wisconsin - Madison, Madison, WI, USA
| | - Tapas R. Nayak
- Department of Radiology, University of Wisconsin - Madison, Madison, WI, USA
| | - Shreya Goel
- Centre of Nanotechnology, Indian Institute of Technology, Roorkee, India
| | - Jero Bean
- Department of Radiology, University of Wisconsin - Madison, Madison, WI, USA
| | | | - Todd E. Barnhart
- Department of Medical Physics, University of Wisconsin - Madison, Madison, WI, USA
| | - Zhuang Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials Laboratory (FUNSOM), Soochow University, Suzhou, Jiangsu, China
- Corresponding Author: OR
| | - Weibo Cai
- Department of Radiology, University of Wisconsin - Madison, Madison, WI, USA
- Department of Medical Physics, University of Wisconsin - Madison, Madison, WI, USA
- University of Wisconsin Carbone Cancer Center, Madison, WI, USA
- Corresponding Author: OR
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36
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Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment. Nat Commun 2012; 3:734. [DOI: 10.1038/ncomms1740] [Citation(s) in RCA: 106] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2011] [Accepted: 02/09/2012] [Indexed: 12/24/2022] Open
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37
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Maeng I, Lim S, Chae SJ, Lee YH, Choi H, Son JH. Gate-controlled nonlinear conductivity of Dirac fermion in graphene field-effect transistors measured by terahertz time-domain spectroscopy. NANO LETTERS 2012; 12:551-555. [PMID: 22214292 DOI: 10.1021/nl202442b] [Citation(s) in RCA: 52] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
We present terahertz spectroscopic measurements of Dirac fermion dynamics from a large-scale graphene that was grown by chemical vapor deposition and on which carrier density was modulated by electrostatic and chemical doping. The measured frequency-dependent optical sheet conductivity of graphene shows electron-density-dependence characteristics, which can be understood by a simple Drude model. In a low carrier density regime, the optical sheet conductivity of graphene is constant regardless of the applied gate voltage, but in a high carrier density regime, it has nonlinear behavior with respect to the applied gate voltage. Chemical doping using viologen was found to be efficient in controlling the equilibrium Fermi level without sacrificing the unique carrier dynamics of graphene.
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Affiliation(s)
- Inhee Maeng
- Department of Physics, University of Seoul, Seoul 130-743, Korea
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38
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Hollander MJ, Labella M, Hughes ZR, Zhu M, Trumbull KA, Cavalero R, Snyder DW, Wang X, Hwang E, Datta S, Robinson JA. Enhanced transport and transistor performance with oxide seeded high-κ gate dielectrics on wafer-scale epitaxial graphene. NANO LETTERS 2011; 11:3601-3607. [PMID: 21805989 DOI: 10.1021/nl201358y] [Citation(s) in RCA: 25] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We explore the effect of high-κ dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic layer deposition that utilizes direct deposition of high-κ seed layers and can lead to an increase in Hall mobility up to 70% from as-grown. Additionally, high-κ seeded dielectrics are shown to produce superior transistor performance relative to low-κ seeded dielectrics and the presence of heterogeneous seed/overlayer structures is found to be detrimental to transistor performance, reducing effective mobility by 30-40%. The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport.
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Affiliation(s)
- Matthew J Hollander
- Materials Science and Engineering Department, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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39
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Huang X, Yin Z, Wu S, Qi X, He Q, Zhang Q, Yan Q, Boey F, Zhang H. Graphene-based materials: synthesis, characterization, properties, and applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2011; 7:1876-902. [PMID: 21630440 DOI: 10.1002/smll.201002009] [Citation(s) in RCA: 1147] [Impact Index Per Article: 88.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2010] [Indexed: 05/21/2023]
Abstract
Graphene, a two-dimensional, single-layer sheet of sp(2) hybridized carbon atoms, has attracted tremendous attention and research interest, owing to its exceptional physical properties, such as high electronic conductivity, good thermal stability, and excellent mechanical strength. Other forms of graphene-related materials, including graphene oxide, reduced graphene oxide, and exfoliated graphite, have been reliably produced in large scale. The promising properties together with the ease of processibility and functionalization make graphene-based materials ideal candidates for incorporation into a variety of functional materials. Importantly, graphene and its derivatives have been explored in a wide range of applications, such as electronic and photonic devices, clean energy, and sensors. In this review, after a general introduction to graphene and its derivatives, the synthesis, characterization, properties, and applications of graphene-based materials are discussed.
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Affiliation(s)
- Xiao Huang
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
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