Few-hundred GHz carbon nanotube nanoelectromechanical systems (NEMS)

Novel Nanotube Multiquantum Dot Devices

Addressable quantum states well isolated from the environment are of considerable interest for quantum information science and technology. Carbon nanotubes are an appealing system, since a perfect crystal can be grown without any missing atoms and its cylindrical structure prevents ill-defined atomic arrangement at the surface. Here, we develop a reliable process to fabricate compact multielectrode circuits that can sustain the harsh conditions of the nanotube growth. Nanotubes are suspended over multiple gate electrodes, which are themselves structured over narrow dielectric ridges to reduce the effect of the charge fluctuators of the substrate. We measure high-quality double- and triple-quantum dot charge stability diagrams. Transport measurements through the triple-quantum dot indicate long-range tunneling of single electrons between the left and right quantum dots. This work paves the way to the realization of a new generation of condensed-matter devices in an ultraclean environment, including spin qubits, mechanical qubits, and quantum simulators.

Mechanoresistive single-molecule junctions

Single-molecule junctions - devices fabricated by electrically connecting a single molecule to two electrodes - can respond to a variety of stimuli, that include electrostatic/electrochemical gating, light, other chemical species, and mechanical forces. When the latter is used, the device becomes mechanoresistive which means that its electrical resistance/conductance changes upon application of a mechanical stress. The mechanoresistive phenomenon can arise at the metal-molecule interface or it can be embedded in the molecular backbone, and several strategies to attain high reproducibility, high sensitivity and reversible behaviour have been developed over the years. These devices offer a unique insight on the process of charge transfer/transport at the metal/molecule interface, and have potential for applications as nanoelectromechanical systems, integrating electrical and mechanical functionality at the nanoscale. In this review, the status of the field is presented, with a focus on those systems that proved to have reversible behaviour, along with a discussion on the techniques used to fabricate and characterise mechanoresistive devices.

Current-induced forces in single-resonance systems

In recent years, there has been an increasing interest in nanoelectromechanical devices, current-driven quantum machines, and the mechanical effects of electric currents on nanoscale conductors. Here, we carry out a thorough study of the current-induced forces and the electronic friction of systems whose electronic effective Hamiltonian can be described by an archetypal model, a single energy level coupled to two reservoirs. Our results can help better understand the general conditions that maximize the performance of different devices modeled as a quantum dot coupled to two electronic reservoirs. Additionally, they can be useful to rationalize the role of current-induced forces in the mechanical deformation of one-dimensional conductors.

Terahertz Spectroscopy of Individual Carbon Nanotube Quantum Dots

We have investigated the electronic structures of metallic carbon nanotube quantum dots (CNT QDs) by terahertz-induced photocurrent spectroscopy. Sharp peaks due to intersublevel transitions in the CNT QDs are observed at the sublevel energy spacings expected from the linear band dispersion. The line width of the photocurrent peak is as narrow as 0.3 meV and is governed by the tunnel coupling with the electrodes, indicating that the scattering time of electrons in the present CNTs is comparable to or longer than 10 ps. The observation of a sharp absorption peak at the bare quantization energy was not consistent with the Tomonaga-Luttinger liquid theory.

Giant electron-hole transport asymmetry in ultra-short quantum transistors

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies η_e−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, η_e−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.

By utilizing electron-hole asymmetry in ultra-short single-walled carbon nanotube (SWCNT) transistors, McRae et al., develop ‘two-in-one' SWCNT quantum devices that can switch from behaving as quantum-dot transistors for holes to quantum buses for electrons by changing the transistor's gate voltage

Remarkable influence of slack on the vibration of a single-walled carbon nanotube resonator

We for the first time quantitatively investigate experimentally the remarkable influence of slack on the vibration of a single-walled carbon nanotube (SWCNT) resonator with a changeable channel length fabricated in situ inside a scanning electron microscope, compare the experimental results with the theoretical predictions calculated from the measured geometric and mechanical parameters of the same SWCNT, and find the following novel points. We demonstrate experimentally that as the slack s is increased from about zero to 1.8%, the detected vibration transforms from single-mode to multimode vibration, and the gate-tuning ability gradually attenuates for all the vibration modes. The quadratic tuning coefficient α decreases linearly with 1/√s when the gate voltage V(g)dc is small and the nanotube resonator operates in the beam regime. The linear tuning coefficient γ decreases linearly with 1/ (4√S) when V(g)dc has an intermediate value and the nanotube resonator operates in the catenary regime. The calculated α and γ fit the experimental values of the even in-plane mode reasonably well. As the slack is increased, the quality factor Q of the resonator linearly goes up, but the increase is far less steep than that predicted by the previous theoretical study. Our results are important to understand and design resonators based on CNT and other nanomaterials.

Tailoring 10 nm scale suspended graphene junctions and quantum dots

The possibility to make 10 nm scale, and low-disorder, suspended graphene devices would open up many possibilities to study and make use of strongly coupled quantum electronics, quantum mechanics, and optics. We present a versatile method, based on the electromigration of gold-on-graphene bow-tie bridges, to fabricate low-disorder suspended graphene junctions and quantum dots with lengths ranging from 6 nm up to 55 nm. We control the length of the junctions, and shape of their gold contacts by adjusting the power at which the electromigration process is allowed to avalanche. Using carefully engineered gold contacts and a nonuniform downward electrostatic force, we can controllably tear the width of suspended graphene channels from over 100 nm down to 27 nm. We demonstrate that this lateral confinement creates high-quality suspended quantum dots. This fabrication method could be extended to other two-dimensional materials.

Ground-state cooling of a carbon nanomechanical resonator by spin-polarized current

We study the nonequilibrium steady state of a mechanical resonator in the quantum regime realized by a suspended carbon nanotube quantum dot in contact with two ferromagnets. Because of the spin-orbit interaction and/or an external magnetic field gradient, the spin on the dot couples directly to the flexural eigenmodes. Accordingly, the nanomechanical motion induces inelastic spin flips of the tunneling electrons. A spin-polarized current at finite bias voltage causes either heating or active cooling of the mechanical modes. We show that maximal cooling is achieved at resonant transport when the energy splitting between two dot levels of opposite spin equals the vibrational frequency. Even for weak electron-resonator coupling and moderate polarizations we can achieve ground-state cooling with a temperature of the leads, for instance, of T = 10 ω.

Clamping instability and van der Waals forces in carbon nanotube mechanical resonators

We investigate the role of weak clamping forces, typically assumed to be infinite, in carbon nanotube mechanical resonators. Due to these forces, we observe a hysteretic clamping and unclamping of the nanotube device that results in a discrete drop in the mechanical resonance frequency on the order of 5-20 MHz, when the temperature is cycled between 340 and 375 K. This instability in the resonant frequency results from the nanotube unpinning from the electrode/trench sidewall where it is bound weakly by van der Waals forces. Interestingly, this unpinning does not affect the Q-factor of the resonance, since the clamping is still governed by van der Waals forces above and below the unpinning. For a 1 μm device, the drop observed in resonance frequency corresponds to a change in nanotube length of approximately 50-65 nm. On the basis of these findings, we introduce a new model, which includes a finite tension around zero gate voltage due to van der Waals forces and shows better agreement with the experimental data than the perfect clamping model. From the gate dependence of the mechanical resonance frequency, we extract the van der Waals clamping force to be 1.8 pN. The mechanical resonance frequency exhibits a striking temperature dependence below 200 K attributed to a temperature-dependent slack arising from the competition between the van der Waals force and the thermal fluctuations in the suspended nanotube.

Transversally and axially tunable carbon nanotube resonators in situ fabricated and studied inside a scanning electron microscope

We report a new design of carbon nanotube (CNT) resonator, whose resonance frequency can be tuned not only transversally by a gate voltage, but also by the axial strain applied through directly pulling the CNT. The resonators are fabricated from individual suspended single-walled CNT (SWCNT) in situ inside a scanning electron microscope. The resonance frequency of a SWCNT resonator can be tuned by more than 20 times with an increase of quality factor when the axial strain of the SWCNT is only increased from nearly zero to 2% at room temperature. The transversal gate-tuning ability is found to be weaker than the axial-tuning ability and decrease with increasing the axial strain. The gate voltage can hardly tune the resonance frequency when the initial axial strain is larger than 0.35% and the CNT acts like a tied string. The relationship among resonance frequency, gate voltage, and initial axial strain of the CNT obtained presently will allow for the designs of CNT resonators with high frequency and large tuning range. The present resonator also shows ultrahigh sensitivity in displacement and force detection, with a resolution being better than 2.4 pm and 0.55 pN, respectively.

Quantum theory of magnetoelectromotive instability in nanoelectromechanical systems with positive differential conductance

We consider dc-electronic transport through a nanowire suspended between two normal-metal leads in the presence of an external magnetic field. We show the very mechanism through which such a system, whose stationary current-voltage characteristic is essentially characterized by positive differential conductance, becomes unstable with respect to an onset of self-excited oscillations in electrical transport and mechanical vibrations. The self-excitation mechanism is based on the correlation between the occupancy of the quantized spin-split electronic energy levels inside the nanowire and the velocity of the nanowire with the crucial influence of strong enough retardation effects in magnetomotive coupling coming from mechanical vibrations.