Catalyst-free growth of millimeter-long topological insulator Bi₂Se₃ nanoribbons and the observation of the π-Berry phase

Low-Vacuum Catalyst-Free Physical Vapor Deposition and Magnetotransport Properties of Ultrathin Bi2Se3 Nanoribbons

In this work, a simple catalyst-free physical vapor deposition method is optimized by adjusting source material pressure and evaporation time for the reliable obtaining of freestanding nanoribbons with thicknesses below 15 nm. The optimum synthesis temperature, time and pressure were determined for an increased yield of ultrathin Bi2Se3 nanoribbons with thicknesses of 8-15 nm. Physical and electrical characterization of the synthesized Bi2Se3 nanoribbons with thicknesses below 15 nm revealed no degradation of properties of the nanoribbons, as well as the absence of the contribution of trivial bulk charge carriers to the total conductance of the nanoribbons.

High-Yield Growth and Tunable Morphology of Bi2Se3 Nanoribbons Synthesized on Thermally Dewetted Au

The yield and morphology (length, width, thickness) of stoichiometric Bi₂Se₃ nanoribbons grown by physical vapor deposition is studied as a function of the diameters and areal number density of the Au catalyst nanoparticles of mean diameters 8–150 nm formed by dewetting Au layers of thicknesses 1.5–16 nm. The highest yield of the Bi₂Se₃ nanoribbons is reached when synthesized on dewetted 3 nm thick Au layer (mean diameter of Au nanoparticles ~10 nm) and exceeds the nanoribbon yield obtained in catalyst-free synthesis by almost 50 times. The mean lengths and thicknesses of the Bi₂Se₃ nanoribbons are directly proportional to the mean diameters of Au catalyst nanoparticles. In contrast, the mean widths of the Bi₂Se₃ nanoribbons do not show a direct correlation with the Au nanoparticle size as they depend on the contribution ratio of two main growth mechanisms—catalyst-free and vapor–liquid–solid deposition. The Bi₂Se₃ nanoribbon growth mechanisms in relation to the Au catalyst nanoparticle size and areal number density are discussed. Determined charge transport characteristics confirm the high quality of the synthesized Bi₂Se₃ nanoribbons, which, together with the high yield and tunable morphology, makes these suitable for application in a variety of nanoscale devices.

Orbit topology analyzed from π phase shift of magnetic quantum oscillations in three-dimensional Dirac semimetal

With the emergence of Dirac fermion physics in the field of condensed matter, magnetic quantum oscillations (MQOs) have been used to discern the topology of orbits in Dirac materials. However, many previous researchers have relied on the single-orbit Lifshitz-Kosevich (LK) formula, which overlooks the significant effect of degenerate orbits on MQOs. Since the single-orbit LK formula is valid for massless Dirac semimetals with small cyclotron masses, it is imperative to generalize the method applicable to a wide range of Dirac semimetals, whether massless or massive. This report demonstrates how spin-degenerate orbits affect the phases in MQOs of three-dimensional massive Dirac semimetal, NbSb2 With varying the direction of the magnetic field, an abrupt π phase shift is observed due to the interference between the spin-degenerate orbits. We investigate the effect of cyclotron mass on the π phase shift and verify its close relation to the phase from the Zeeman coupling. We find that the π phase shift occurs when the cyclotron mass is half of the electron mass, indicating the effective spin gyromagnetic ratio as g s = 2. Our approach is not only useful for analyzing MQOs of massless Dirac semimetals with a small cyclotron mass but also can be used for MQOs in massive Dirac materials with degenerate orbits, especially in topological materials with a sufficiently large cyclotron mass. Furthermore, this method provides a useful way to estimate the precise g s value of the material.

Phase-coherent loops in selectively-grown topological insulator nanoribbons

We succeeded in the fabrication of topological insulator (Bi_0.57Sb_0.43)₂Te₃ Hall bars as well as nanoribbons by means of selective-area growth using molecular beam epitaxy. By performing magnetotransport measurements at low temperatures information on the phase-coherence of the electrons is gained by analyzing the weak-antilocalization effect. Furthermore, from measurements on nanoribbons at different magnetic field tilt angles an angular dependence of the phase-coherence length is extracted, which is attributed to transport anisotropy and geometrical factors. For the nanoribbon structures universal conductance fluctuations were observed. By performing a Fourier transform of the fluctuation pattern a series of distinct phase-coherent closed-loop trajectories are identified. The corresponding enclosed areas can be explained in terms of nanoribbon dimensions and phase-coherence length. In addition, from measurements at different magnetic field tilt angles we can deduce that the area enclosed by the loops are predominately oriented parallel to the quintuple layers.

Novel synthesis of topological insulator based nanostructures (Bi2Te3) demonstrating high performance photodetection

The rapid progress in 2D material research has triggered the growth of various quantum nanostructures- nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis of hybrid materials beyond the conventional approaches. Here we introduce simple, one step confined thin melting approach to form nanostructures of TI (topological insulator) materials, their hybrid heterostructures with other novel 2D materials and their scalable growth. The substrate and temperature dependent growth is investigated on insulating, superconducting, metallic, semiconducting and ferromagnetic materials. The temperature dependent synthesis enables the growth of single, few quintuples to nanosheets and nanocrystals. The density of nanostructure growth is seen more on fabricated patterns or textured substrates. The fabricated nanostructure based devices show the broadband photodetection from ultraviolet to near infrared and exhibit high photoresponsivity. Ultimately, this unique synthesis process will give easy access to fabricate devices on user friendly substrates, study nanostructures and scalable growth will enable their future technology applications.

Young's modulus and indirect morphological analysis of Bi2Se3 nanoribbons by resonance measurements

An electrostatically induced resonance behaviour of individual topological insulator Bi₂Se₃ nanoribbons grown by a catalyst free vapour-solid synthesis was studied in situ by scanning electron microscopy. It was demonstrated that the relation between the resonant frequencies of vibrations in orthogonal planes can be applied to distinguish the nanoribbons with rectangular cross-sections from the nanoribbons having step-like morphology (terraces). The average Young's modulus of the Bi₂Se₃ nanoribbons with rectangular cross-sections was found to be 44 ± 4 GPa.

Free-standing millimetre-long Bi2Te3 sub-micron belts catalyzed by TiO2 nanoparticles

Physical vapour deposition (PVD) is used to grow millimetre-long Bi2Te3 sub-micron belts catalysed by TiO2 nanoparticles. The catalytic efficiency of TiO2 nanoparticles for the nanostructure growth is compared with the catalyst-free growth employing scanning electron microscopy. The catalyst-coated and catalyst-free substrates are arranged side-by-side, and overgrown at the same time, to assure identical growth conditions in the PVD furnace. It is found that the catalyst enhances the yield of the belts. Very long belts were achieved with a growth rate of 28 nm/min. A ∼1-mm-long belt with a rectangular cross section was obtained after 8 h of growth. The thickness and width were determined by atomic force microscopy, and their ratio is ∼1:10. The chemical composition was determined to be stoichiometric Bi2Te3 using energy-dispersive X-ray spectroscopy. Temperature-dependent conductivity measurements show a characteristic increase of the conductivity at low temperatures. The room temperature conductivity of 0.20 × 10(5) S m (-1) indicates an excellent sample quality.

Thermal Stability and Anisotropic Sublimation of Two-Dimensional Colloidal Bi2Te3 and Bi2Se3 Nanocrystals

The structural and compositional stabilities of two-dimensional (2D) Bi2Te3 and Bi2Se3 nanocrystals, produced by both colloidal synthesis and by liquid phase exfoliation, were studied by in situ transmission electron microscopy (TEM) during annealing at temperatures between 350 and 500 °C. The sublimation process induced by annealing is structurally and chemically anisotropic and takes place through the preferential dismantling of the prismatic {011̅0} type planes, and through the preferential sublimation of Te (or Se). The observed anisotropic sublimation is independent of the method of nanocrystal's synthesis, their morphology, or the presence of surfactant molecules on the nanocrystals surface. A thickness-dependent depression in the sublimation point has been observed with nanocrystals thinner than about 15 nm. The Bi2Se3 nanocrystals were found to sublimate below 280 °C, while the Bi2Te3 ones sublimated at temperatures between 350 and 450 °C, depending on their thickness, under the vacuum conditions in the TEM column. Density functional theory calculations confirm that the sublimation of the prismatic {011̅0} facets is more energetically favorable. Within the level of modeling employed, the sublimation occurs at a rate about 700 times faster than the sublimation of the {0001} planes at the annealing temperatures used in this work. This supports the distinctly anisotropic mechanisms of both sublimation and growth of Bi2Te3 and Bi2Se3 nanocrystals, known to preferentially adopt a 2D morphology. The anisotropic sublimation behavior is in agreement with the intrinsic anisotropy in the surface free energy brought about by the crystal structure of Bi2Te3 or Bi2Se3.

Band Bending Inversion in Bi2Se3 Nanostructures

Shubnikov-de Haas oscillations were studied under high magnetic field in Bi2Se3 nanostructures grown by chemical vapor transport, for different bulk carrier densities ranging from 3 × 10(19) cm(-3) to 6 × 10(17) cm(-3). The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.

Catalyst-free vapour-solid technique for deposition of Bi2Te3 and Bi2Se3 nanowires/nanobelts with topological insulator properties

We present a simple two-stage vapour-solid synthesis method for the growth of bismuth chalcogenide (Bi2Te3, Bi2Se3) topological insulator nanowires/nanobelts by using Bi2Se3 or Bi2Te3 powders as source materials. During the first stage of the synthesis process nanoplateteles, serving as "catalysts" for further nanowire/nanobelt growth, are formed. At a second stage of the synthesis, the introduction of a N2 flow at 35 Torr pressure in the chamber induces the formation of free standing nanowires/nanobelts. The synthesised nanostructures demonstrate a layered single-crystalline structure and Bi : Se and Bi : Te ratios 40 : 60 at% for both Bi2Se3 and Bi2Te3 nanowires/nanobelts. The presence of Shubnikov de Haas oscillations in the longitudinal magneto-resistance of the nanowires/nanobelts and their specific angular dependence confirms the existence of 2D topological surface states in the synthesised nanostructures.

A Roadmap for Controlled Production of Topological Insulator Nanostructures and Thin Films

The group V-VI chalcogenide semiconductors (Bi2 Se3 , Bi2 Te3 , and Sb2 Te3 ) have long been known as thermoelectric materials. Recently, they have been once more generating interest because Bi2 Se3 , Bi2 Te3 and Sb2 Te3 have been crowned as 3D topological insulators (TIs), which have insulating bulk gaps and metallic Dirac surface states. One big challenge in the study of TIs is the lack of high-quality materials with few defects and insulating bulk states. To manifest the topological surface states, it is critical to suppress the contribution from the bulk carriers. Controlled production of TI nanostructures that have a large surface-to-volume ratio is an efficient way to reduce the bulk conductance and to significantly enhance the topological surface conduction. In this review article, the recent progress on the preparation of TI nanostructures is highlighted. Basic production methods for TI nanostructures are introduced in detail. Furthermore, several specific production approaches to reduce the residual bulk carriers from defects are summarized. Finally, the progress and the prospects of the production of TI-based heterostructures, which hold promise in both fundamental study and novel applications are discussed.

Crossover from 3D to 2D quantum transport in Bi2Se3/In2Se3 superlattices

The topological insulator/normal insulator (TI/NI) superlattices (SLs) with multiple Dirac channels are predicted to offer great opportunity to design novel materials and investigate new quantum phenomena. Here, we report first transport studies on the SLs composed of TI Bi2Se3 layers sandwiched by NI In2Se3 layers artificially grown by molecular beam epitaxy (MBE). The transport properties of two kinds of SL samples show convincing evidence that the transport dimensionality changes from three-dimensional (3D) to two-dimensional (2D) when decreasing the thickness of building block Bi2Se3 layers, corresponding to the crossover from coherent TI transport to separated TI channels. Our findings provide the possibility to realizing "3D surface states" in TI/NI SLs.

Topological surface state enhanced photothermoelectric effect in Bi2Se3 nanoribbons

The photothermoelectric effect in topological insulator Bi2Se3 nanoribbons is studied. The topological surface states are excited to be spin-polarized by circularly polarized light. Because the direction of the electron spin is locked to its momentum for the spin-helical surface states, the photothermoelectric effect is significantly enhanced as the oriented motions of the polarized spins are accelerated by the temperature gradient. The results are explained based on the microscopic mechanisms of a photon induced spin transition from the surface Dirac cone to the bulk conduction band. The as-reported enhanced photothermoelectric effect is expected to have potential applications in a spin-polarized power source.

Crossover between weak antilocalization and weak localization of bulk states in ultrathin Bi₂Se₃ films

We report transport studies on the 5 nm thick Bi₂Se₃ topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the bulk conduction band above the Dirac point, suggesting important contribution of bulk states to the transport results. In particular, the crossover from weak antilocalization to weak localization in the bulk states is observed in the parallel magnetic field measurements up to 50 Tesla. The measured magneto-resistance exhibits interesting anisotropy with respect to the orientation of parallel magnetic field B_// and the current I, signifying intrinsic spin-orbit coupling in the Bi₂Se₃ films. Our work directly shows the crossover of quantum interference effect in the bulk states from weak antilocalization to weak localization. It presents an important step toward a better understanding of the existing three-dimensional topological insulators and the potential applications of nano-scale topological insulator devices.

High-mobility Bi2Se3 nanoplates manifesting quantum oscillations of surface states in the sidewalls

Magnetotransport measurements of topological insulators are very important to reveal the exotic topological surface states for spintronic applications. However, the novel properties related to the surface Dirac fermions are usually accompanied by a large linear magnetoresistance under perpendicular magnetic field, which makes the identification of the surface states obscure. Here, we report prominent Shubnikov-de Haas (SdH) oscillations under an in-plane magnetic field, which are identified to originate from the surface states in the sidewalls of topological insulator Bi₂Se₃ nanoplates. Importantly, the SdH oscillations appear with a dramatically weakened magnetoresistance background, offering an easy path to probe the surface states directly when the coexistence of surface states and bulk conduction is inevitable. Moreover, under a perpendicular magnetic field, the oscillations in Hall conductivity have peak-to-valley amplitudes of 2 e²/h, giving confidence to achieve a quantum Hall effect in this system. A cross-section view of the nanoplate shows that the sidewall is (015) facet dominant and therefore forms a 58° angle with regard to the top/bottom surface instead of being perpendicular; this gives credit to the surface states' behavior as two-dimensional transport.

Synthesis and quantum transport properties of Bi₂Se₃ topological insulator nanostructures

Bi₂Se₃ nanocrystals with various morphologies, including nanotower, nanoplate, nanoflake, nanobeam and nanowire, have been synthesized. Well-distinguished Shubnikov-de Haas (SdH) oscillations were observed in Bi₂Se₃ nanoplates and nanobeams. Careful analysis of the SdH oscillations suggests the existence of Berry's phase π, which confirms the quantum transport of the surface Dirac fermions in both Bi₂Se₃ nanoplates and nanobeams without intended doping. The observation of the singular quantum transport of the topological surface states implies that the high-quality Bi₂Se₃ nanostructures have superiorities for investigating the novel physical properties and developing the potential applications.

Topological surface transport properties of single-crystalline SnTe nanowire

SnTe has attracted worldwide interest since its theoretical predication as topological crystalline insulator. Because of promising applications of one-dimensional topological insulator in nanoscale electronics and spintronics device, it is very important to realize the observation of topological surface states in one-dimensional SnTe. In this work, for the first time we successfully synthesized high-quality single crystalline SnTe nanowire via gold-catalyst chemical vapor deposition method. Systematical investigation of Aharonov-Bohm and Shubnikov-de Haas oscillations in single SnTe nanowire prove the existence of Dirac electrons. Further analysis of temperature-dependent Shubnikov-de Haas oscillations gives valuable information of cyclotron mass, mean-free path, and mobility of Dirac electrons in SnTe nanowire. Our study provides the experimental groundwork for research in low-dimensional topological crystalline insulator materials and paves the way for the application of SnTe nanowire in nanoelectronics and spintronics device.