1
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Schätz J, Nayi N, Weber J, Metzke C, Lukas S, Walter J, Schaffus T, Streb F, Reato E, Piacentini A, Grundmann A, Kalisch H, Heuken M, Vescan A, Pindl S, Lemme MC. Button shear testing for adhesion measurements of 2D materials. Nat Commun 2024; 15:2430. [PMID: 38499534 PMCID: PMC10948857 DOI: 10.1038/s41467-024-46136-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2023] [Accepted: 02/15/2024] [Indexed: 03/20/2024] Open
Abstract
Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, button shear testing is proposed and demonstrated as a method for evaluating the adhesion of 2D materials with the examples of graphene, hexagonal boron nitride (hBN), molybdenum disulfide, and tungsten diselenide on silicon dioxide and silicon nitride substrates. We propose a fabrication process flow for polymer buttons on the 2D materials and establish suitable button dimensions and testing shear speeds. We show with our quantitative data that low substrate roughness and oxygen plasma treatments on the substrates before 2D material transfer result in higher shear strengths. Thermal annealing increases the adhesion of hBN on silicon dioxide and correlates with the thermal interface resistance between these materials. This establishes button shear testing as a reliable and repeatable method for quantifying the adhesion of 2D materials.
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Affiliation(s)
- Josef Schätz
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Navin Nayi
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Jonas Weber
- Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469, Deggendorf, Germany
- Department of Applied Physics, University of Barcelona, Martí i Franquès 1, 08028, Barcelona, Spain
| | - Christoph Metzke
- Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469, Deggendorf, Germany
- Department of Electrical Engineering, Helmut Schmidt University/University of the Federal Armed Forces Hamburg, Holstenhofweg 85, 22043, Hamburg, Germany
| | - Sebastian Lukas
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Jürgen Walter
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Tim Schaffus
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Fabian Streb
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Eros Reato
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Agata Piacentini
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
- AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
| | - Annika Grundmann
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany
| | - Holger Kalisch
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany
| | - Michael Heuken
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany
- AIXTRON SE, Dornkaulstr. 2, 52134, Herzogenrath, Germany
| | - Andrei Vescan
- Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstr. 18, 52074, Aachen, Germany
| | - Stephan Pindl
- Infineon Technologies AG, Wernerwerkstraße 2, 93049, Regensburg, Germany
| | - Max C Lemme
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany.
- AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074, Aachen, Germany.
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2
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Calis M, Lloyd D, Boddeti N, Bunch JS. Adhesion of 2D MoS 2 to Graphite and Metal Substrates Measured by a Blister Test. NANO LETTERS 2023; 23:2607-2614. [PMID: 37011413 DOI: 10.1021/acs.nanolett.2c04886] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Using a blister test, we measured the work of separation between MoS2 membranes from metal, semiconductor, and graphite substrates. We found a work of separation ranging from 0.11 ± 0.05 J/m2 for chromium to 0.39 ± 0.1 J/m2 for graphite substrates. In addition, we measured the work of adhesion of MoS2 membranes over these substrates and observed a dramatic difference between the work of separation and adhesion, which we attribute to adhesion hysteresis. Due to the prominent role that adhesive forces play in the fabrication and functionality of devices made from 2D materials, an experimental determination of the work of separation and adhesion as provided here will help guide their development.
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Affiliation(s)
- Metehan Calis
- Boston University, Department of Mechanical Engineering, Boston, Massachusetts 02215, United States
| | - David Lloyd
- Analog Garage, Analog Devices Inc., Boston, Massachusetts 02110, United States
| | - Narasimha Boddeti
- Washington State University, School of Mechanical and Materials Engineering, Pullman, Washington 99163, United States
| | - J Scott Bunch
- Boston University, Department of Mechanical Engineering, Boston, Massachusetts 02215, United States
- Boston University, Division of Materials Science and Engineering, Brookline, Massachusetts 02446, United States
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3
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Di Giorgio C, Blundo E, Pettinari G, Felici M, Polimeni A, Bobba F. Exceptional Elasticity of Microscale Constrained MoS 2 Domes. ACS APPLIED MATERIALS & INTERFACES 2021; 13:48228-48238. [PMID: 34592817 PMCID: PMC8517950 DOI: 10.1021/acsami.1c13293] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Accepted: 09/21/2021] [Indexed: 05/31/2023]
Abstract
The outstanding mechanical performances of two-dimensional (2D) materials make them appealing for the emerging fields of flextronics and straintronics. However, their manufacturing and integration in 2D crystal-based devices rely on a thorough knowledge of their hardness, elasticity, and interface mechanics. Here, we investigate the elasticity of highly strained monolayer-thick MoS2 membranes, in the shape of micrometer-sized domes, by atomic force microscopy (AFM)-based nanoindentation experiments. A dome's crushing procedure is performed to induce a local re-adhesion of the dome's membrane to the bulk substrate under the AFM tip's load. It is worth noting that no breakage, damage, or variation in size and shape are recorded in 95% of the crushed domes upon unloading. Furthermore, such a procedure paves the way to address quantitatively the extent of the van der Waals interlayer interaction and adhesion of MoS2 by studying pull-in instabilities and hysteresis of the loading-unloading cycles. The fundamental role and advantage of using a superimposed dome's constraint are also discussed.
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Affiliation(s)
- Cinzia Di Giorgio
- Department
of Physics E.R. Caianiello, University of
Salerno, 84084 Fisciano, Italy
- INFN,
Sezione di Napoli, Gruppo Collegato di Salerno, Complesso Universitario di Monte S. Angelo, 80126 Napoli, Italy
| | - Elena Blundo
- Physics
Department, Sapienza University of Rome, 00185 Rome, Italy
| | - Giorgio Pettinari
- Institute
for Photonics and Nanotechnologies (CNR-IFN), National Research Council, 00156 Rome, Italy
| | - Marco Felici
- Physics
Department, Sapienza University of Rome, 00185 Rome, Italy
| | - Antonio Polimeni
- Physics
Department, Sapienza University of Rome, 00185 Rome, Italy
| | - Fabrizio Bobba
- Department
of Physics E.R. Caianiello, University of
Salerno, 84084 Fisciano, Italy
- INFN,
Sezione di Napoli, Gruppo Collegato di Salerno, Complesso Universitario di Monte S. Angelo, 80126 Napoli, Italy
- CNR-SPIN, 84084 Fisciano, SA, Italy
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4
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Blundo E, Yildirim T, Pettinari G, Polimeni A. Experimental Adhesion Energy in van der Waals Crystals and Heterostructures from Atomically Thin Bubbles. PHYSICAL REVIEW LETTERS 2021; 127:046101. [PMID: 34355951 DOI: 10.1103/physrevlett.127.046101] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2020] [Revised: 05/08/2021] [Accepted: 06/07/2021] [Indexed: 06/13/2023]
Abstract
The formation of gas-filled bubbles on the surface of van der Waals crystals provides an ideal platform whereby the interplay of the elastic parameters and interlayer forces can be suitably investigated. Here, we combine experimental and numerical efforts to study the morphology of the bubbles at equilibrium and highlight unexpected behaviors that contrast with the common assumptions. We exploit such observations to develop an accurate analytical model to describe the shape and strain of the bubbles and exploit it to measure the adhesion energy between a variety of van der Waals crystals, showing sizable material-dependent trends.
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Affiliation(s)
- Elena Blundo
- Physics Department, Sapienza University of Rome, 00185 Roma, Italy
| | - Tanju Yildirim
- Center for Functional Sensor and Actuator (CFSN), Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Giorgio Pettinari
- Institute for Photonics and Nanotechnologies, National Research Council (CNR-IFN), 00156 Roma, Italy
| | - Antonio Polimeni
- Physics Department, Sapienza University of Rome, 00185 Roma, Italy
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5
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Zhou F, Liu B, Li Z, Zhou J, Shan J, Cui L, Hu J, Quan W, Cui K, Gao P, Zhang Y. Adhesion-Enhanced Vertically Oriented Graphene on Titanium-Covered Quartz Glass toward High-Stability Light-Dimming-Related Applications. ACS NANO 2021; 15:10514-10524. [PMID: 34038079 DOI: 10.1021/acsnano.1c03063] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Improving the adhesion property of graphene directly grown on an insulating substrate is essential for promoting the reliability and durability of the related applications. However, effective approaches have rarely been reported, especially for vertically oriented graphene (VG) films grown on insulating templates. To tackle this, we have developed a facile synthetic strategy by introducing an ultrathin (10 nm-thick) titanium (Ti) film on a quartz glass substrate as the adhesion layer, for plasma-enhanced chemical vapor deposition (PECVD) growth of VG films. This synthetic process induces the formation of Ti, oxygen (O), carbon (C)-containing adhesion layer (Ti (O, C)), offering improved interfacial adhesion due to the formation of chemical bonds among Ti and C atoms. Dramatically improved surface and interface stabilities have been achieved, with regard to its counterpart without a Ti adhesion layer. Moreover, we have also realized precise controls of the transparent/conductive property, surface roughness, and hydrophobicity, etc., by varying the VG film growth time. We have also demonstrated the very intriguing application potentials of the hybrids in light-dimming related fields, that is, electro-heating defogging lenses and neutral density filters toward medical endoscope defogging and camera photography.
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Affiliation(s)
- Fan Zhou
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P.R. China
- School of Materials Science and Engineering, Peking University, Beijing 100871, P.R. China
| | - Bingyao Liu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P.R. China
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, P.R. China
| | - Zhi Li
- Beijing Graphene Institute (BGI), Beijing 100095, P.R. China
| | - Jinghui Zhou
- Beijing Graphene Institute (BGI), Beijing 100095, P.R. China
| | - Junjie Shan
- Beijing Graphene Institute (BGI), Beijing 100095, P.R. China
| | - Lingzhi Cui
- Beijing Graphene Institute (BGI), Beijing 100095, P.R. China
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P.R. China
- School of Materials Science and Engineering, Peking University, Beijing 100871, P.R. China
| | - Wenzhi Quan
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P.R. China
- School of Materials Science and Engineering, Peking University, Beijing 100871, P.R. China
| | - Kejian Cui
- Beijing Graphene Institute (BGI), Beijing 100095, P.R. China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, P.R. China
- Beijing Graphene Institute (BGI), Beijing 100095, P.R. China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, P.R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, P.R. China
- Beijing Graphene Institute (BGI), Beijing 100095, P.R. China
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6
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He L, Wang H, Chen L, Wang X, Xie H, Jiang C, Li C, Elibol K, Meyer J, Watanabe K, Taniguchi T, Wu Z, Wang W, Ni Z, Miao X, Zhang C, Zhang D, Wang H, Xie X. Isolating hydrogen in hexagonal boron nitride bubbles by a plasma treatment. Nat Commun 2019; 10:2815. [PMID: 31249298 PMCID: PMC6597567 DOI: 10.1038/s41467-019-10660-9] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/22/2018] [Accepted: 05/13/2019] [Indexed: 12/04/2022] Open
Abstract
Atomically thin hexagonal boron nitride (h-BN) is often regarded as an elastic film that is impermeable to gases. The high stabilities in thermal and chemical properties allow h-BN to serve as a gas barrier under extreme conditions. Here, we demonstrate the isolation of hydrogen in bubbles of h-BN via plasma treatment. Detailed characterizations reveal that the substrates do not show chemical change after treatment. The bubbles are found to withstand thermal treatment in air, even at 800 °C. Scanning transmission electron microscopy investigation shows that the h-BN multilayer has a unique aligned porous stacking nature, which is essential for the character of being transparent to atomic hydrogen but impermeable to hydrogen molecules. In addition, we successfully demonstrated the extraction of hydrogen gases from gaseous compounds or mixtures containing hydrogen element. The successful production of hydrogen bubbles on h-BN flakes has potential for further application in nano/micro-electromechanical systems and hydrogen storage.
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Affiliation(s)
- Li He
- School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050, Shanghai, China
- CAS Center for Excellence in Superconducting Electronics (CENSE), 200050, Shanghai, China
| | - Huishan Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050, Shanghai, China
- CAS Center for Excellence in Superconducting Electronics (CENSE), 200050, Shanghai, China
- Graduate University of the Chinese Academy of Sciences, 100049, Beijing, China
| | - Lingxiu Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050, Shanghai, China
- CAS Center for Excellence in Superconducting Electronics (CENSE), 200050, Shanghai, China
| | - Xiujun Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050, Shanghai, China
- CAS Center for Excellence in Superconducting Electronics (CENSE), 200050, Shanghai, China
- Graduate University of the Chinese Academy of Sciences, 100049, Beijing, China
| | - Hong Xie
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050, Shanghai, China
- CAS Center for Excellence in Superconducting Electronics (CENSE), 200050, Shanghai, China
| | - Chengxin Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050, Shanghai, China
- CAS Center for Excellence in Superconducting Electronics (CENSE), 200050, Shanghai, China
- School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, 200031, Shanghai, China
| | - Chen Li
- Department of Lithospheric Research, University of Vienna, Althanstraße 14, 1090, Vienna, Austria
- Electron Microscopy for Materials Research (EMAT), University Antwerpen, Groenenborgerlaan 171, 2020, Antwerpen, Belgium
| | - Kenan Elibol
- Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090, Wien, Austria
- School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
- Advanced Microscopy Laboratory, Centre for Research on Adaptive Nanostructures and Nanodevices, Dublin 2, Ireland
| | - Jannik Meyer
- Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090, Wien, Austria
- Institute for Applied Physics and Natural and Medical Sciences Institute, University of Tübingen, Tübingen, D-72076, Germany
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Zhangting Wu
- Department of Physics, Southeast University, 211189, Nanjing, China
| | - Wenhui Wang
- Department of Physics, Southeast University, 211189, Nanjing, China
| | - Zhenhua Ni
- Department of Physics, Southeast University, 211189, Nanjing, China
| | - Xiangshui Miao
- School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Chi Zhang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Daoli Zhang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074, Wuhan, China.
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050, Shanghai, China.
- CAS Center for Excellence in Superconducting Electronics (CENSE), 200050, Shanghai, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049, Beijing, P.R. China.
| | - Xiaoming Xie
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050, Shanghai, China
- CAS Center for Excellence in Superconducting Electronics (CENSE), 200050, Shanghai, China
- School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, 200031, Shanghai, China
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7
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Zhang Y, Heiranian M, Janicek B, Budrikis Z, Zapperi S, Huang PY, Johnson HT, Aluru NR, Lyding JW, Mason N. Strain Modulation of Graphene by Nanoscale Substrate Curvatures: A Molecular View. NANO LETTERS 2018; 18:2098-2104. [PMID: 29474080 DOI: 10.1021/acs.nanolett.8b00273] [Citation(s) in RCA: 33] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Spatially nonuniform strain is important for engineering the pseudomagnetic field and band structure of graphene. Despite the wide interest in strain engineering, there is still a lack of control on device-compatible strain patterns due to the limited understanding of the structure-strain relationship. Here, we study the effect of substrate corrugation and curvature on the strain profiles of graphene via combined experimental and theoretical studies of a model system: graphene on closely packed SiO2 nanospheres with different diameters (20-200 nm). Experimentally, via quantitative Raman analysis, we observe partial adhesion and wrinkle features and find that smaller nanospheres induce larger tensile strain in graphene; theoretically, molecular dynamics simulations confirm the same microscopic structure and size dependence of strain and reveal that a larger strain is caused by a stronger, inhomogeneous interaction force between smaller nanospheres and graphene. This molecular-level understanding of the strain mechanism is important for strain engineering of graphene and other two-dimensional materials.
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Affiliation(s)
| | | | | | - Zoe Budrikis
- ISI Foundation , Via Chisola 5 , 10126 Torino , Italy
| | - Stefano Zapperi
- ISI Foundation , Via Chisola 5 , 10126 Torino , Italy
- Center for Complexity and Biosystems, Department of Physics , University of Milano , Via Celoria 16 , 20133 Milano , Italy
- CNR - Consiglio Nazionale delle Ricerche , Istituto di Chimica della Materia Condensata e di Tecnologie per l'Energia , Via R. Cozzi 53 , 20125 Milano , Italy
- Department of Applied Physics , Aalto University , P.O. Box 11100, FI-00076 Espoo , Finland
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8
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Berger C, Phillips R, Centeno A, Zurutuza A, Vijayaraghavan A. Capacitive pressure sensing with suspended graphene-polymer heterostructure membranes. NANOSCALE 2017; 9:17439-17449. [PMID: 29105718 DOI: 10.1039/c7nr04621a] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
We describe the fabrication and characterisation of a capacitive pressure sensor formed by an ultra-thin graphene-polymer heterostructure membrane spanning a large array of micro-cavities each up to 30 μm in diameter with 100% yield. Sensors covering an area of just 1 mm2 show reproducible pressure transduction under static and dynamic loading up to pressures of 250 kPa. The measured capacitance change in response to pressure is in good agreement with calculations. Further, we demonstrate high-sensitivity pressure sensors by applying a novel strained membrane transfer and optimising the sensor architecture. This method enables suspended structures with less than 50 nm of air dielectric gap, giving a pressure sensitivity of 123 aF Pa-1 mm-2 over a pressure range of 0 to 100 kPa.
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Affiliation(s)
- Christian Berger
- School of Materials and National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK.
| | - Rory Phillips
- School of Materials and National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK.
| | - Alba Centeno
- Graphenea S.A., 20018 Donostia-San Sebastián, Spain
| | | | - Aravind Vijayaraghavan
- School of Materials and National Graphene Institute, University of Manchester, Manchester, M13 9PL, UK.
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9
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Cartamil-Bueno SJ, Centeno A, Zurutuza A, Steeneken PG, van der Zant HSJ, Houri S. Very large scale characterization of graphene mechanical devices using a colorimetry technique. NANOSCALE 2017; 9:7559-7564. [PMID: 28534924 DOI: 10.1039/c7nr01766a] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We use a scalable optical technique to characterize more than 21 000 circular nanomechanical devices made of suspended single- and double-layer graphene on cavities with different diameters (D) and depths (g). To maximize the contrast between suspended and broken membranes we used a model for selecting the optimal color filter. The method enables parallel and automatized image processing for yield statistics. We find the survival probability to be correlated with a structural mechanics scaling parameter given by D4/g3. Moreover, we extract a median adhesion energy of Γ = 0.9 J m-2 between the membrane and the native SiO2 at the bottom of the cavities.
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10
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Kumar S, Parks D, Kamrin K. Mechanistic Origin of the Ultrastrong Adhesion between Graphene and a-SiO2: Beyond van der Waals. ACS NANO 2016; 10:6552-6562. [PMID: 27347793 DOI: 10.1021/acsnano.6b00382] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The origin of the ultrastrong adhesion between graphene and a-SiO2 has remained a mystery. This adhesion is believed to be predominantly van der Waals (vdW) in nature. By rigorously analyzing recently reported blistering and nanoindentation experiments, we show that the ultrastrong adhesion between graphene and a-SiO2 cannot be attributed to vdW forces alone. Our analyses show that the fracture toughness of the graphene/a-SiO2 interface, when the interfacial adhesion is modeled with vdW forces alone, is anomalously weak compared to the measured values. The anomaly is related to an ultrasmall fracture process zone (FPZ): owing to the lack of a third dimension in graphene, the FPZ for the graphene/a-SiO2 interface is extremely small, and the combination of predominantly tensile vdW forces, distributed over such a small area, is bound to result in a correspondingly small interfacial fracture toughness. Through multiscale modeling, combining the results of finite element analysis and molecular dynamics simulations, we show that the adhesion between graphene and a-SiO2 involves two different kinds of interactions: one, a weak, long-range interaction arising from vdW adhesion and, second, discrete, short-range interactions originating from graphene clinging to the undercoordinated Si (≡Si·) and the nonbridging O (≡Si-O·) defects on a-SiO2. A strong resistance to relative opening and sliding provided by the latter mechanism is identified as the operative mechanism responsible for the ultrastrong adhesion between graphene and a-SiO2.
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Affiliation(s)
- Sandeep Kumar
- Department of Mechanical Engineering, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | - David Parks
- Department of Mechanical Engineering, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | - Ken Kamrin
- Department of Mechanical Engineering, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
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11
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Monfared Zanjani JS, Okan BS, Menceloglu YZ, Yildiz M. Nano-engineered design and manufacturing of high-performance epoxy matrix composites with carbon fiber/selectively integrated graphene as multi-scale reinforcements. RSC Adv 2016. [DOI: 10.1039/c5ra23665g] [Citation(s) in RCA: 56] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Three different architectural designs are developed for manufacturing advanced multi-scale reinforced epoxy based composites in which graphene sheets and carbon fibers are utilized as nano- and micro-scale reinforcements, respectively.
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Affiliation(s)
- Jamal Seyyed Monfared Zanjani
- Faculty of Engineering and Natural Sciences
- Integrated Manufacturing Technologies Research and Application Center
- Sabanci University
- Istanbul
- Turkey
| | - Burcu Saner Okan
- Sabanci University Nanotechnology Research and Application Center
- SUNUM
- Istanbul 34956
- Turkey
| | - Yusuf Ziya Menceloglu
- Faculty of Engineering and Natural Sciences
- Integrated Manufacturing Technologies Research and Application Center
- Sabanci University
- Istanbul
- Turkey
| | - Mehmet Yildiz
- Faculty of Engineering and Natural Sciences
- Integrated Manufacturing Technologies Research and Application Center
- Sabanci University
- Istanbul
- Turkey
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12
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Park JH, Lim T, Baik J, Seo K, Moon Y, Park N, Shin HJ, Kwak SK, Ju S, Ahn JR. Seamless lamination of a concave-convex architecture with single-layer graphene. NANOSCALE 2015; 7:18138-18146. [PMID: 26477976 DOI: 10.1039/c5nr04004c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Graphene has been used as an electrode and channel material in electronic devices because of its superior physical properties. Recently, electronic devices have changed from a planar to a complicated three-dimensional (3D) geometry to overcome the limitations of planar devices. The evolution of electronic devices requires that graphene be adaptable to a 3D substrate. Here, we demonstrate that chemical-vapor-deposited single-layer graphene can be transferred onto a silicon dioxide substrate with a 3D geometry, such as a concave-convex architecture. A variety of silicon dioxide concave-convex architectures were uniformly and seamlessly laminated with graphene using a thermal treatment. The planar graphene was stretched to cover the concave-convex architecture, and the resulting strain on the curved graphene was spatially resolved by confocal Raman spectroscopy; molecular dynamic simulations were also conducted and supported the observations. Changes in electrical resistivity caused by the spatially varying strain induced as the graphene-silicon dioxide laminate varies dimensionally from 2D to 3D were measured by using a four-point probe. The resistivity measurements suggest that the electrical resistivity can be systematically controlled by the 3D geometry of the graphene-silicon dioxide laminate. This 3D graphene-insulator laminate will broaden the range of graphene applications beyond planar structures to 3D materials.
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Affiliation(s)
- Ji-Hoon Park
- Department of Physics and SAINT, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
| | - Taekyung Lim
- Department of Physics, Kyonggi University, Suwon 443-760, Republic of Korea.
| | - Jaeyoon Baik
- Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea
| | - Keumyoung Seo
- Department of Physics, Kyonggi University, Suwon 443-760, Republic of Korea.
| | - Youngkwon Moon
- Department of Physics and SAINT, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
| | - Noejung Park
- Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea
| | - Hyun-Joon Shin
- Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea
| | - Sang Kyu Kwak
- School of Nano-Bioscience and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
| | - Sanghyun Ju
- Department of Physics, Kyonggi University, Suwon 443-760, Republic of Korea.
| | - Joung Real Ahn
- Department of Physics and SAINT, Sungkyunkwan University, Suwon 440-746, Republic of Korea.
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Liu X, Suk JW, Boddeti NG, Cantley L, Wang L, Gray JM, Hall HJ, Bright VM, Rogers CT, Dunn ML, Ruoff RS, Bunch JS. Large arrays and properties of 3-terminal graphene nanoelectromechanical switches. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:1571-6. [PMID: 24339026 DOI: 10.1002/adma.201304949] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2013] [Indexed: 05/08/2023]
Abstract
Large arrays of 3-terminal nanoelectromechanical graphene switches are fabricated. The switch is designed with a novel geometry that leads to low actuation voltages and improved mechanical integrity, while reducing adhesion forces, which improves the reliability of the switch. A finite element model including non-linear electromechanics is used to simulate the switching behavior and to deduce a scaling relation between the switching voltage and device dimensions.
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Affiliation(s)
- Xinghui Liu
- Department of Mechanical Engineering, University of Colorado, Boulder, CO, 80309, USA
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14
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Boddeti NG, Liu X, Long R, Xiao J, Bunch JS, Dunn ML. Graphene blisters with switchable shapes controlled by pressure and adhesion. NANO LETTERS 2013; 13:6216-6221. [PMID: 24224793 DOI: 10.1021/nl4036324] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We created graphene blisters that cover and seal an annular cylinder-shaped microcavity in a SiO2 substrate filled with a gas. By controlling the pressure difference between the gas inside and outside of the microcavity, we switch the graphene membrane between multiple stable equilibrium configurations. We carried out experiments starting from the situation where the pressure of the gas inside and outside of the microcavity is set equal to a prescribed charging pressure, p0 and the graphene membrane covers the cavity like an annular drum, adhered to the central post and the surrounding substrate due to van der Waals forces. We decrease the outside pressure to a value, pe which causes it to bulge into an annular blister. We systematically increase the charging pressure by repeating this procedure causing the annular blister to continue to bulge until a critical charging pressure pc(i) is reached. At this point the graphene membrane delaminates from the post in an unstable manner, resulting in a switch of graphene membrane shape from an annular to a spherical blister. Continued increase of the charging pressure results in the spherical blister growing with its height increasing, but maintaining a constant radius until a second critical charging pressure pc(o) is reached at which point the blister begins to delaminate from the periphery of the cavity in a stable manner. Here, we report a series of experiments as well as a mechanics and thermodynamic model that demonstrate how the interplay among system parameters (geometry, graphene stiffness (number of layers), pressure, and adhesion energy) results in the ability to controllably switch graphene blisters among different shapes. Arrays of these blisters can be envisioned to create pressure-switchable surface properties where the difference between patterns of annular versus spherical blisters will impact functionalities such as wettability, friction, adhesion, and surface wave characteristics.
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Affiliation(s)
- Narasimha G Boddeti
- Department of Mechanical Engineering, University of Colorado , Boulder, Colorado 80309, United States
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