Strengthening brittle semiconductor nanowires through stacking faults: insights from in situ mechanical testing

Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures

III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.

Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

Nanowire structures with high-density interfaces are considered to have higher radiation damage resistance properties compared to conventional bulk structures. In the present work, molecular dynamics (MD) is conducted to investigate the irradiation effects and mechanical response changes of GaAs nanowires (NWs) under heavy-ion irradiation. For this simulation, single-ion damage and high-dose ion injection are used to reveal defect generation and accumulation mechanisms. The presence of surface effects gives an advantage to defects in rapid accumulation but is also the main cause of dynamic annihilation of the surface. Overall, the defects exhibit a particular mechanism of rapid accumulation to saturation. Moreover, for the structural transformation of irradiated GaAs NWs, amorphization is the main mode. The main damage mechanism of NWs is sputtering, which also leads to erosion refinement at high doses. The high flux ions lead to a softening of the mechanical properties, which can be reflected by a reduction in yield strength and Young’s modulus.

Exceptional Deformability of Wurtzite Zinc Oxide Nanowires with Growth Axial Stacking Faults

To ensure reliability and facilitate the strain engineering of zinc oxide (ZnO) nanowires (NWs), it is significant to understand their flexibility thoroughly. In this study, single-crystalline ZnO NWs with rich axial pyramidal I (π₁) and prismatic stacking faults (SFs) are synthesized by a metal oxidation method. Bending properties of the as-synthesized ZnO NWs are investigated at the atomic scale using an in situ high-resolution transmission electron microscopy (HRTEM) technique. It is revealed that the SF-rich structures can foster multiple inelastic deformation mechanisms near room temperature, including active axial SFs' migration, deformation twinning and detwinning process in the NWs with growth π₁ SFs, and prevalent nucleation and slip of perfect dislocations with a continuous increased bending strain, leading to tremendous bending strains up to 20% of the NWs. Our results record ultralarge bending deformations and provide insights into the deformation mechanisms of single-crystalline ZnO NWs with rich axial SFs.

Interactions between butterfly-like prismatic dislocation loop pairs and planar defects in Ni3Al

Understanding the interactions between planar defects and complex dislocation structures in a material is of great significance to simplify its design. In this paper, we show that, from an atomistic perspective, by using molecular dynamics simulations on nanoindentations, a prismatic dislocation loop in Ni3Al appears in pairs with a butterfly-like shape. The planar defects in Ni3Al can effectively block the movement of the prismatic dislocation loop pairs and play a hardening role. Among the impediment factors, twinning boundaries are the strongest and antiphase boundaries are the weakest. Superlattice intrinsic and complex stacking faults have basically the same blocking effect. Furthermore, we systematically elucidate the hardening effects and interaction mechanisms between the prismatic dislocation loop pairs and planar defects. These findings provide novel insights into the nanostructured design of materials with excellent mechanical properties.

Hierarchical nanotwins in single-crystal-like nickel with high strength and corrosion resistance produced via a hybrid technique

High-density growth nanotwins enable high-strength and good ductility in metallic materials. However, twinning propensity is greatly reduced in metals with high stacking fault energy. Here we adopted a hybrid technique coupled with template-directed heteroepitaxial growth method to fabricate single-crystal-like, nanotwinned (nt) Ni. The nt Ni primarily contains hierarchical twin structures that consist of coherent and incoherent twin boundary segments with few conventional grain boundaries. In situ compression studies show the nt Ni has a high flow strength of ∼2 GPa and good deformability. Moreover, the nt Ni has superb corrosion behavior due to the unique twin structure in comparison to coarse grained and nanocrystalline counterparts. The hybrid technique opens the door for the fabrication of a wide variety of single-crystal-like nt metals with unique mechanical and chemical properties.

Multi-Segmented Nanowires: A High Tech Bright Future

In the last couple of decades, there has been a lot of progress in the synthesis methods of nano-structural materials, but still the field has a large number of puzzles to solve. Metal nanowires (NWs) and their alloys represent a sub category of the 1-D nano-materials and there is a large effort to study the microstructural, physical and chemical properties to use them for further industrial applications. Due to technical limitations of single component NWs, the hetero-structured materials gained attention recently. Among them, multi-segmented NWs are more diverse in applications, consisting of two or more segments that can perform multiple function at a time, which confer their unique properties. Recent advancement in characterization techniques has opened up new opportunities for understanding the physical properties of multi-segmented structures of 1-D nanomaterials. Since the multi-segmented NWs needs a reliable response from an external filed, numerous studies have been done on the synthesis of multi-segmented NWs to precisely control the physical properties of multi-segmented NWs. This paper highlights the electrochemical synthesis and physical properties of multi-segmented NWs, with a focus on the mechanical and magnetic properties by explaining the shape, microstructure, and composition of NWs.

In Situ Atomic-Scale Study on the Ultralarge Bending Behaviors of TiO2-B/Anatase Dual-Phase Nanowires

It is challenging but important to understand the mechanical properties of one-dimensional (1D) nanomaterials for their design and integration into nanodevices. Generally, brittle ceramic nanowires (NWs) cannot withstand a large bending strain. Herein, in situ bending deformation of titanium dioxide (TiO₂) NWs with a bronze/anatase dual-phase was carried out inside a transmission electron microscopy (TEM) system. An ultralarge bending strain up to 20.3% was observed on individual NWs. Through an in situ atomic-scale study, the large bending behavior for a dual-phase TiO₂ NW was found to be related to a continuous crystalline-structure evolution including phase transition, small deformation twinning, and dislocation nucleation and movements. Additionally, no amorphization or crack occurred in the dual-phase TiO₂ NW even under an ultralarge bending strain. These results revealed that an individual ceramic NW can undergo a large bending strain with rich defect activities.

Ultrahigh Recovery of Fracture Strength on Mismatched Fractured Amorphous Surfaces of Silicon Carbide

Nanowires (NWs) have been envisioned as building blocks of nanotechnology and nanodevices. In this study, NWs were manipulated using a weasel hair and fixed by conductive silver epoxy, eliminating the contaminations and damages induced by conventional beam depositions. The fracture strength of the amorphous silicon carbide was found to be 8.8 GPa, which was measured by in situ transmission electron microscopy nanomechanical testing, approaching the theoretical fracture limit. Here, we report that self-healing of mismatched fractured amorphous surfaces of brittle NWs was discovered. The fracture strength was found to be 5.6 GPa on the mismatched fractured surfaces, recovering 63.6% of that of pristine NWs. This is an ultrahigh recovery, due to the limits of reconstruction of dangling bonds on the fractured amorphous surfaces and the mismatched areas. Simulation by molecular dynamics showed fracture strength recovery of 65.9% on the mismatched fractured amorphous surfaces, which is in good agreement with the experimental results. Healing on the mismatched fractured amorphous surfaces is by reorganization of Si-C bonds forming Si-C and Si-Si bonds. The potential energy increases 2.6 eV in the reorganized Si-C bonds and decreases by 3.2 and 1.9 eV, respectively, in the formed Si-C and Si-Si bonds. These findings provide insights for the reliability, design, and fabrication of high performance NW-based devices, to avoid catastrophic failure working in harsh and extreme environments.

Mechanical Behavior of InP Twinning Superlattice Nanowires

Taper-free InP twinning superlattice (TSL) nanowires with an average twin spacing of ∼13 nm were grown along the zinc-blende close-packed [111] direction using metalorganic vapor phase epitaxy. The mechanical properties and fracture mechanisms of individual InP TSL nanowires in tension were ascertained by means of in situ uniaxial tensile tests in a transmission electron microscope. The elastic modulus, failure strain, and tensile strength along the [111] direction were determined. No evidence of inelastic deformation mechanisms was found before fracture, which took place in a brittle manner along the twin boundary. The experimental results were supported by molecular dynamics simulations of the tensile deformation of the nanowires that also showed that the fracture of twinned nanowires occurred in the absence of inelastic deformation mechanisms by the propagation of a crack from the nanowire surface along the twin boundary.

Atomic-scale investigation on the ultra-large bending behaviours of layered sodium titanate nanowires

A study on the mechanical properties of one-dimensional layered titanate nanomaterials is crucial since they demonstrate important applications in various fields. Here, we conducted ex situ and in situ atomic-scale investigation on the bending properties of a kind of ceramic-layered titanate (Na2Ti2O4(OH)2) nanowire using transmission electron microscopy. The nanowires showed flexibility along the 100 direction and could obtain a maximum bending strain of nearly 37%. By analysing the defect behaviours, the unique bending properties of this ceramic material were found to correlate with a novel arrangement of dislocations, an active dislocation nucleation and movement along the axial direction resulting from the weak electrostatic interaction between the TiO6 layers and the low b/a ratio. These results provide a pioneering and key understanding on the bending behaviours of layered titanate nanowire families and potentially other one-dimensional nanomaterials with layered crystalline structures.

Synthesis of Polytypic Gallium Phosphide and Gallium Arsenide Nanowires and Their Application as Photodetectors

One-dimensional semiconductor nanowires often contain polytypic structures, owing to the co-existence of different crystal phases. Therefore, understanding the properties of polytypic structures is of paramount importance for many promising applications in high-performance nanodevices. Herein, we synthesized nanowires of typical III-V semiconductors, namely, gallium phosphide and gallium arsenide by using the chemical vapor transport method. The growth directions ([111] and [211]) could be switched by changing the experimental conditions, such as H₂ gas flow; thus, various polytypic structures were produced simultaneously in a controlled manner. The nanobeam electron diffraction technique was employed to obtain strain mapping of the nanowires by visualizing the polytypic structures along the [111] direction. Micro-Raman spectra for individual nanowires were collected, confirming the presence of wurtzite phase in the polytypic nanowires. Further, we fabricated the photodetectors using the single nanowires, and the polytypic structures are shown to decrease the photosensitivity. Our systematic analysis provides important insight into the polytypic structures of nanowires.

Four-Dimensional Probing of Phase-Reaction Dynamics in Au/GaAs Nanowires

Nanoeutectic phase reaction covers the fundamental study of a chemical and physical reaction of multiple phases at the nanoscale. Here, we report the direct visualization of phase-reaction dynamics in Au/GaAs nanowires (NWs) using four-dimensional (4D) electron microscopy. The NW phase reactions were initiated with a pump laser pulse, while the following dynamics in the Au/GaAs NW was probed by a precisely time-delayed electron pulse. Single-pulse imaging reveals that the cubic zinc-blende NW presents a transient length increase within the time duration of ∼150 ns, giving the appearance of intermediate phase reactions at an early stage. A final length reduction of the NW is observed after the phase reactions have fully ended. In contrast, only length reduction is seen throughout the entire process in GaAs/AlGaAs core-shell and hexagonal wurtzite GaAs NWs. The reasons for the above intriguing phenomena are discussed. The eutectic-related phenomena in both zinc-blende and wurtzite materials offer a comprehensive understanding of phase-reaction dynamics in polytypic structures commonly available in compound semiconductors.

Atomistic Interface Dynamics in Sn-Catalyzed Growth of Wurtzite and Zinc-Blende ZnO Nanowires

Unraveling the phase selection mechanisms of semiconductor nanowires (NWs) is critical for the applications in future advanced nanodevices. In this study, the atomistic vapor-solid-liquid growth processes of Sn-catalyzed wurtzite (WZ) and zinc blende (ZB) ZnO are directly revealed based on the in situ transmission electron microscopy. The growth kinetics of WZ and ZB crystal phases in ZnO appear markedly different in terms of the NW-droplet interface, whereas the nucleation site as determined by the contact angle ϕ between the seed particle and the NW is found to be crucial for tuning the NW structure through combined experimental and theoretical investigations. These results offer an atomic-scale view into the dynamic growth process of ZnO NW, which has implications for the phase-controllable synthesis of II-VI compounds and heterostructures with tunable band structures.

In situ mechanical resonance behaviour of pristine and defective zinc blende GaAs nanowires

The structural versatility of semiconducting gallium arsenide (GaAs) nanowires (NWs) provides an exciting direction for the engineering of their mechanical and dynamic properties. However, the dynamic behaviour of GaAs NWs remains unexplored. In this study, comprehensive in situ mechanical resonance tests were conducted to explore the dynamic behaviour of pristine and defective zinc blende GaAs NWs. The effects of stacking faults (SFs), amorphous shell, NW tapering and end-mass particles were investigated. The quality factors (QFs) of the GaAs NWs were found to be predominately governed by surface effects, which increased linearly with the volume to surface area ratio. Interestingly, SFs were found not to influence the QFs. To extract the mechanical properties, the Euler-Bernoulli beam theory was modified, to incorporate the core-shell model, NW tapering and end-mass particles. It was found that the core-shell model accurately predicts the mechanical properties of the pristine GaAs NWs, which exhibit significant stiffening at radii below 50 nm. Conversely, the mechanical properties of the defective NWs were influenced by the presence of SFs, causing a wide variance in the Young's modulus. Apart from establishing an understanding of the resonance behaviour of GaAs NWs, this research provides guidance for the design of NWs for their applications in dynamic nanomechanical devices with tailorable dynamic properties.

Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy

Eutectic-related reaction is a special chemical/physical reaction involving multiple phases, solid and liquid. Visualization of a phase reaction of composite nanomaterials with high spatial and temporal resolution provides a key understanding of alloy growth with important industrial applications. However, it has been a rather challenging task. Here, we report the direct imaging and control of the phase reaction dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparticle, free from environmental confinement or disturbance, using four-dimensional (4D) electron microscopy. The nondestructive preparation of as-grown free-standing nanowires without supporting films allows us to study their anisotropic properties in their native environment with better statistical character. A laser heating pulse initiates the eutectic-related reaction at a temperature much lower than the melting points of the composite materials, followed by a precisely time-delayed electron pulse to visualize the irreversible transient states of nucleation, growth, and solidification of the complex. Combined with theoretical modeling, useful thermodynamic parameters of the newly formed alloy phases and their crystal structures could be determined. This technique of dynamical control aided by 4D imaging of phase reaction processes on the nanometer-ultrafast time scale opens new venues for engineering various reactions in a wide variety of other systems.

Suspended tungsten-based nanowires with enhanced mechanical properties grown by focused ion beam induced deposition

The implementation of three-dimensional (3D) nano-objects as building blocks for the next generation of electro-mechanical, memory and sensing nano-devices is at the forefront of technology. The direct writing of functional 3D nanostructures is made feasible by using a method based on focused ion beam induced deposition (FIBID). We use this technique to grow horizontally suspended tungsten nanowires and then study their nano-mechanical properties by three-point bending method with atomic force microscopy. These measurements reveal that these nanowires exhibit a yield strength up to 12 times higher than that of the bulk tungsten, and near the theoretical value of 0.1 times the Young's modulus (E). We find a size dependence of E that is adequately described by a core-shell model, which has been confirmed by transmission electron microscopy and compositional analysis at the nanoscale. Additionally, we show that experimental resonance frequencies of suspended nanowires (in the MHz range) are in good agreement with theoretical values. These extraordinary mechanical properties are key to designing electro-mechanically robust nanodevices based on FIBID tungsten nanowires.

Ultralarge Bending Strain and Fracture-Resistance Investigation of Tungsten Carbide Nanowires

Hard tungsten carbide (WC) with brittle behavior is frequently applied for mechanical purposes. Here, ultralarge elastic bending deformation is reported in defect-rare WC [0001] nanowires; the tested bending strain reaches a maximum of 20% ± 3.33%, which challenges the traditional understanding of this material. The lattice analysis indicates that the dislocations are confined to the inner part of the WC nanowires. First, the high Peierls-Nabarro barrier hinders the movement of the locally formed dislocations, which causes rapid dislocation aggregation and hinders long-range glide, resulting in a dense distribution of the dislocation network. In this case, the loading is dispersed along multiple points, which is then balanced by the complex internal mechanical field. In the compressive part, the possible dislocations predominantly emerge in the (0001) plane and mainly slip along the axial direction. The disordered shell first forms at the tensile side and prevents the generation of nanocracks at the surface. The novel lattice kinetics make WC nanowires capable of substantial bending strain resistance. Analytical results of the force-displacement (F-d) curves based on the double-clamped beam model exhibit an obvious nonlinear elastic characteristic, which originates fundamentally from the lattice anharmonicity under moderate stress.

Bent Polytypic ZnSe and CdSe Nanowires Probed by Photoluminescence

Nanowires (NWs) have witnessed tremendous development over the past two decades owing to their varying potential applications. Semiconductor NWs often contain stacking faults due to the presence of coexisting phases, which frequently hampers their use. Herein, it is investigated how stacking faults affect the optical properties of bent ZnSe and CdSe NWs, which are synthesized using the vapor transport method. Polytypic zinc blende-wurtzite structures are produced for both these NWs by altering the growth conditions. The NWs are bent by the mechanical buckling of poly(dimethylsilioxane), and micro-photoluminescence (PL) spectra were then collected for individual NWs with various bending strains (0-2%). The PL measurements show peak broadening and red shifts of the near-band-edge emission as the bending strain increases, indicating that the bandgap decreases with increasing the bending strain. Remarkably, the bandgap decrease is more significant for the polytypic NWs than for the single phase NWs. This work provides insights into flexible electronic devices of 1D nanostructures by engineering the polytypic structures.

The Mechanical Properties of Nanowires

Applications of nanowires into future generation nanodevices require a complete understanding of the mechanical properties of the nanowires. A great research effort has been made in the past two decades to understand the deformation physics and mechanical behaviors of nanowires, and to interpret the discrepancies between experimental measurements and theoretical predictions. This review focused on the characterization and understanding of the mechanical properties of nanowires, including elasticity, plasticity, anelasticity and strength. As the results from the previous literature in this area appear inconsistent, a critical evaluation of the characterization techniques and methodologies were presented. In particular, the size effects of nanowires on the mechanical properties and their deformation mechanisms were discussed.

Defect Engineering: A Path toward Exceeding Perfection

Moving to nanoscale is a path to get perfect materials with superior properties. Yet defects, such as stacking faults (SFs), are still forming during the synthesis of nanomaterials and, according to common notion, degrade the properties. Here, we demonstrate the possibility of engineering defects to, surprisingly, achieve mechanical properties beyond those of the corresponding perfect structures. We show that introducing SFs with high density increases the Young's Modulus and the critical stress under compressive loading of the nanowires above those of a perfect structure. The physics can be explained by the increase in intrinsic strain due to the presence of SFs and overlapping of the corresponding strain fields. We have used the molecular dynamics technique and considered ZnO as our model material due to its technological importance for a wide range of electromechanical applications. The results are consistent with recent experiments and propose a novel approach for the fabrication of stronger materials.

Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires

Stacking faults (SFs) are commonly observed crystalline defects in III-V semiconductor nanowires (NWs) that affect a variety of physical properties. Understanding the effect of SFs on NW mechanical properties is critical to NW applications in nanodevices. In this study, the Young's moduli of GaAs NWs with two distinct structures, defect-free single crystalline wurtzite (WZ) and highly defective wurtzite containing a high density of SFs (WZ-SF), are investigated using combined in situ compression transmission electron microscopy and finite element analysis. The Young's moduli of both WZ and WZ-SF GaAs NWs were found to increase with decreasing diameter due to the increasing volume fraction of the native oxide shell. The presence of a high density of SFs was further found to increase the Young's modulus by 13%. This stiffening effect of SFs is attributed to the change in the interatomic bonding configuration at the SFs.

In situ fabrication and investigation of nanostructures and nanodevices with a microscope

The widespread availability of nanostructures and nanodevices has placed strict requirements on their comprehensive characterization.

Effects of loading misalignment and tapering angle on the measured mechanical properties of nanowires

Loading misalignment and tapering of nanowires are usually unavoidable factors in compression and tensile mechanical property testing of nanowires. Herein, we report quantitative finite element analyses and experimental measurements on how these two factors affect the measured compression and tensile mechanical properties if they are not included in the data analysis. The results obtained show that ignoring these two factors leads to different degrees of underestimation of the critical load, Young's modulus and tensile fracture strength.

Fracture strain of SiC nanowires and direct evidence of electron-beam induced amorphisation in the strained nanowires

SiC nanowires with diameters ranging from 29 to 270 nm exhibit an average strain of 5.5% with a maximum of up to 7.0%. The brittle fracture of the nano-wires being measured was confirmed by transmission electron microscopy (TEM) analysis. This study demonstrates that amorphisation occurs in the stained SiC nanowires during normal TEM examination, which could be induced by electron irradiation.

Bundling of GaAs nanowires: a case of adhesion-induced self-assembly of nanowires

The origin of deflections of semiconductor nanowires (NWs) induced by an electron beam in scanning electron microscopy has been subject to different interpretations. Similarly, the subsequent clumping together of NWs into bundles is frequently observed, but no interpretation has yet been advanced. Here we present results on the bundling of NWs following the intentional bending by an electron beam. Furthermore, we extend the concept of lateral collapse, usually applied to fibrillar architectures mimicking the adhesiveness of natural surfaces (the so-called Gecko effect), to analyze the mechanism of the NW bundle formation. We demonstrate how the geometry of the NW arrays and the mechanical properties of the composing materials govern bundling and how these parameters should be taken into account in the design of NW arrays both for avoiding vertical misalignment when detrimental and for achieving patterning of NW arrays into nanoarchitectures.

Vapor-phase synthesis, growth mechanism and thickness-independent elastic modulus of single-crystal tungsten nanobelts

Single-crystal tungsten nanobelts with thicknesses from tens to hundreds of nanometers, widths of several micrometers and lengths of tens of micrometers were synthesized using chemical vapor deposition. Surface energy minimization was believed to have played a crucial role in the growth of the synthesized nanobelts enclosed by the low-energy {110} crystal planes of body-centered-cubic structure. The anisotropic growth of the crystallographically equivalent {110} crystal planes could be attributable to the asymmetric concentration distribution of the tungsten atom vapor around the nanobelts during the growth process. The elastic moduli of the synthesized tungsten nanobelts with thicknesses ranging from 65 to 306 nm were accurately measured using a newly developed thermal vibration method. The measured modulus values of the tungsten nanobelts were thickness-dependent. After eliminating the effect of surface oxidization using a core-shell model, the elastic modulus of tungsten nanobelts became constant, which is close to that of the bulk tungsten value of 410 GPa.

Dynamic process of phase transition from wurtzite to zinc blende structure in InAs nanowires

In situ high-resolution transmission electron microscopy revealed the precipitation of the zinc-blende (ZB) structure InAs at the liquid/solid interface or liquid/solid/amorphous carbon triple point at high temperature. Subsequent to its precipitation, detailed analysis demonstrates unique solid to solid wurtzite (WZ) to ZB phase transition through gliding of sharp steps with Shockley partial dislocations. The most intriguing phenomenon was that each step is 6 {111} atomic layers high and the step migrated without any mechanical stress applied. We believe that this is the first direct in situ observation of WZ-ZB transition in semiconductor nanowires. A model was proposed in which three Shockley partial dislocations collectively glide on every two {0001} planes (corresponds to six atomic planes in an unit). The collective glide mechanism does not need any applied shear stress.