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Khanyile BS, Numan N, Simo A, Nkosi M, Mtshali CB, Khumalo Z, Madiba IG, Mabakachaba B, Swart H, Coetsee-Hugo E, Duvenhage MM, Lee E, Henini M, Gibaud A, Chaker M, Rezaee P, Lethole N, Akbari M, Morad R, Maaza M. Towards Room Temperature Thermochromic Coatings with controllable NIR-IR modulation for solar heat management & smart windows applications. Sci Rep 2024; 14:2818. [PMID: 38307893 PMCID: PMC10837131 DOI: 10.1038/s41598-024-52021-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Accepted: 01/12/2024] [Indexed: 02/04/2024] Open
Abstract
Solar heat management & green air-conditioning are among the major technologies that could mitigate heat islands phenomenon while minimizing significantly the CO2 global foot-print within the building & automotive sectors. Chromogenic materials in general, and thermochromic smart coatings especially are promising candidates that consent a noteworthy dynamic solar radiation Infrared (NIR-IR) regulation and hence an efficient solar heat management especially with the expected increase of the global seasonal temperature. Within this contribution, two major challenging bottlenecks in vanadium oxide based smart coatings were addressed. It is validated for the first time that the NIR-IR modulation of the optical transmission (∆TTRANS = T(T〈TMIT) - T(T〉TMIT) of Vanadium oxide based smart coatings can be controlled & tuned. This upmost challenging bottle-neck controllability/tunability is confirmed via a genuine approach alongside to a simultaneous drastic reduction of the phase transition temperature TMIT from 68.8 °C to nearly room temperature. More precisely, a substantial thermochromism in multilayered V2O5/V/V2O5 stacks equivalent to that of standard pure VO2 thin films but with a far lower transition temperature, is reported. Such a multilayered V2O5/V/V2O5 thermochromic system exhibited a net control & tunability of the optical transmission modulation in the NIR-IR (∆TTRANS) via the nano-scaled thickness' control of the intermediate Vanadium layer. In addition, the control of ∆TTRANS is accompanied by a tremendous diminution of the thermochromic transition temperature from the elevated bulk value of 68.8 °C to the range of 27.5-37.5 ºC. The observed remarkable and reversible thermochromism in such multilayered nano-scaled system of V2O5/V/V2O5 is likely to be ascribed to a noteworthy interfacial diffusion, and an indirect doping by alkaline ions diffusing from the borosilicate substrate. It is hoped that the current findings would contribute in advancing thermochromic smart window technology and their applications for solar heat management in glass windows in general, skyscraper especially & in the automotive industry. If so, this would open a path to a sustainable green air-conditioning with zero-energy input.
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Affiliation(s)
- B S Khanyile
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa.
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa.
| | - N Numan
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - A Simo
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - M Nkosi
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - C B Mtshali
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
| | - Z Khumalo
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
| | - I G Madiba
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - B Mabakachaba
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
- Physics Department, University of the Western Cape, P.O. Box 1906, Bellville, 7535, South Africa
| | - H Swart
- Faculty of Natural and Agricultural Sciences, Physics Department, University of the Free State, P.O. Box 339, Bloemfontein, 9300, Republic of South Africa
| | - E Coetsee-Hugo
- Faculty of Natural and Agricultural Sciences, Physics Department, University of the Free State, P.O. Box 339, Bloemfontein, 9300, Republic of South Africa
| | - Mart-Mari Duvenhage
- Faculty of Natural and Agricultural Sciences, Physics Department, University of the Free State, P.O. Box 339, Bloemfontein, 9300, Republic of South Africa
| | - E Lee
- Faculty of Natural and Agricultural Sciences, Physics Department, University of the Free State, P.O. Box 339, Bloemfontein, 9300, Republic of South Africa
| | - M Henini
- School of Physics & Astronomy, Nottingham University, Nottingham, NG7 2RD7, UK
| | - A Gibaud
- IMMM, UMR 6283 CNRS, Bd O. Messiaen, University of Le Maine, 72085, Le Mans Cedex 09, France
| | - M Chaker
- INRS-Energie et Matériaux, 1650 Lionel-Boulet, Varennes, Québec, J3X 1S2, Canada
| | - P Rezaee
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - N Lethole
- Department Physics, University of Fort Hare, Alice, Eastern Cape Province, South Africa
| | - M Akbari
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - R Morad
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa
| | - M Maaza
- MRD-Tandetron Accelerator & Nanosciences African Network, iThemba LABS-National Research Foundation, P O Box 722, Somerset West, 7129, Western Cape Province, South Africa.
- UNESCO-UNISA Africa Chair in Nanosciences and Nanotechnology, College of Graduate Studies, University of South Africa, Muckleneuk Ridge, P.O. Box 392, Pretoria, 003, South Africa.
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2
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Farbaniec L, Eakins DE. Thermoreflectance-based approach for surface temperature measurements of thin-film gold sensors. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2023; 94:034902. [PMID: 37012816 DOI: 10.1063/5.0129312] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
A novel thermoreflectance-based diagnostic tool capable of visualizing spatial and temporal changes in surface temperature is presented. The method uses narrow spectral emission bands of blue [λ = 405 nm with 10 nm full-width-at-half-maximum (FWHM)] and green (λ = 532 nm with 10 nm FWHM) light to monitor the optical properties of gold and thin-film gold sensors, relating changes in reflectivity to temperature through a known calibration coefficient. The system is made robust to tilt and surface roughness variations through the simultaneous measurement of both probing channels with a single camera. Experimental validation is performed on two forms of gold materials heated from room temperature to 200 °C at a rate of ∼100 °C/min. Subsequent image analysis shows perceptible changes in reflectivity in the narrow band of green light, while the blue light remains temperature-insensitive. The reflectivity measurements are used to calibrate a predictive model with temperature-dependent parameters. The physical interpretation of the modeling results is given, and the strengths and limitations of the presented approach are discussed.
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Affiliation(s)
- L Farbaniec
- Institute of Shock Physics, Imperial College London, London SW7 2AZ, United Kingdom
| | - D E Eakins
- Institute of Shock Physics, Imperial College London, London SW7 2AZ, United Kingdom
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3
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Hong WK, Jang HS, Yoon J, Choi WJ. Modulation of Switching Characteristics in a Single VO 2 Nanobeam with Interfacial Strain via the Interconnection of Multiple Nanoscale Channels. ACS APPLIED MATERIALS & INTERFACES 2023; 15:11296-11303. [PMID: 36787543 DOI: 10.1021/acsami.2c21367] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We demonstrate the modulation of electrical switching properties through the interconnection of multiple nanoscale channels (∼600 nm) in a single VO2 nanobeam with a coexisting metal-insulator (M-I) domain configuration during phase transition. The Raman scattering characteristics of the synthesized VO2 nanobeams provide evidence that substrate-induced interfacial strain can be inhomogeneously distributed along the length of the nanobeam. Interestingly, the nanoscale VO2 devices with the same channel length and width exhibit distinct differences in hysteric current-voltage characteristics, which are explained by theoretical calculations of resistance change combined with Joule heating simulations of the nanoscale VO2 channels. The observed results can be attributed to the difference in the spatial distribution and fraction ratios of M-I domains due to interfacial strain in the nanoscale VO2 channels during the metal-insulator transition process. Moreover, we demonstrate the electrically activated resistive switching characteristics based on the hysteresis behaviors of the interconnected nanoscale channels, implying the possibility of manipulating multiple resistive states. Our results may offer insights into the nanoscale engineering of correlated phases in VO2 as the key materials of neuromorphic computing for which nonlinear conductance is essential.
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Affiliation(s)
- Woong-Ki Hong
- Center for Scientific Instrumentation, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Hun Soo Jang
- Chemical Materials Solutions Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Jongwon Yoon
- Department of Energy & Electronic Materials, Surface & Nano Materials Division, Korea Institute of Materials Science, Changwon-si, Gyeongsangnam-do 51508, Republic of Korea
| | - Woo Jin Choi
- Chemical Materials Solutions Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
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4
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Lee D, Min T, Kim J, Song S, Lee J, Kang H, Lee J, Cho DY, Lee J, Jang JH, Park S. Octahedral Symmetry Modification Induced Orbital Occupancy Variation in VO 2. J Phys Chem Lett 2022; 13:75-82. [PMID: 34958580 DOI: 10.1021/acs.jpclett.1c03278] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Octahedral symmetry is one of the parameters to tune the functional properties of complex oxides. VO2, a complex oxide with a 3d1 electronic system, exhibits an insulator-metal transition (IMT) near room temperature (∼68 °C), accompanying a change in the octahedral structure from asymmetrical to symmetrical. However, the role of octahedral symmetry in VO2 on the IMT characteristics is unclear. Crystal and electronic structure analyses combined with density-functional-theory calculations showed the bandwidth-controlled IMT characteristics of monoclinic VO2 with high octahedral symmetry. The expanded apical V-O length for a high octahedral symmetry of a VO2 film increased the bandwidth of the conduction band by depressing V 3d-O 2p hybridization. As a result, the interdimer hopping energy increased and thereby decreased the IMT temperature, although the short V-V chain enhanced electron correlation. These findings suggest that octahedral symmetry can control the IMT characteristics of VO2 by changing the orbital occupancy.
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Affiliation(s)
- Dooyong Lee
- Department of Physics, Pusan National University, Busan 46241, Korea
- Korea Basic Science Institute, Daejeon 34133, Korea
| | - Taewon Min
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jiwoong Kim
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Sehwan Song
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jisung Lee
- Korea Basic Science Institute, Daejeon 34133, Korea
| | - Haeyong Kang
- Department of Physics, Pusan National University, Busan 46241, Korea
| | - Jouhahn Lee
- Korea Basic Science Institute, Daejeon 34133, Korea
| | - Deok-Yong Cho
- IPIT & Department of Physics, Jeonbuk National University, Jeonju 54896, Korea
| | - Jaekwang Lee
- Department of Physics, Pusan National University, Busan 46241, Korea
| | | | - Sungkyun Park
- Department of Physics, Pusan National University, Busan 46241, Korea
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5
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Zhao M, Kim D, Lee YH, Yang H, Cho S. Quantum Sensing of Thermoelectric Power in Low-Dimensional Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021:e2106871. [PMID: 34889480 DOI: 10.1002/adma.202106871] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Revised: 11/26/2021] [Indexed: 06/13/2023]
Abstract
Thermoelectric power, has been extensively studied in low-dimensional materials where quantum confinement and spin textures can largely modulate thermopower generation. In addition to classical and macroscopic values, thermopower also varies locally over a wide range of length scales, and is fundamentally linked to electron wave functions and phonon propagation. Various experimental methods for the quantum sensing of localized thermopower have been suggested, particularly based on scanning probe microscopy. Here, critical advances in the quantum sensing of thermopower are introduced, from the atomic to the several-hundred-nanometer scales, including the unique role of low-dimensionality, defects, spins, and relativistic effects for optimized power generation. Investigating the microscopic nature of thermopower in quantum materials can provide insights useful for the design of advanced materials for future thermoelectric applications. Quantum sensing techniques for thermopower can pave the way to practical and novel energy devices for a sustainable society.
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Affiliation(s)
- Mali Zhao
- Interdisciplinary Materials Research Center, College of Materials Science and Engineering, Tongji University, Shanghai, 201804, People's Republic of China
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Korea
| | - Dohyun Kim
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Korea
| | - Young Hee Lee
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science, Suwon, 16419, Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Suyeon Cho
- Division of Chemical Engineering and Materials Science, Ewha Womans University, Seoul, 03760, Korea
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6
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Fujiwara M, Shikano Y. Diamond quantum thermometry: from foundations to applications. NANOTECHNOLOGY 2021; 32:482002. [PMID: 34416739 DOI: 10.1088/1361-6528/ac1fb1] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2021] [Accepted: 08/20/2021] [Indexed: 06/13/2023]
Abstract
Diamond quantum thermometry exploits the optical and electrical spin properties of colour defect centres in diamonds and, acts as a quantum sensing method exhibiting ultrahigh precision and robustness. Compared to the existing luminescent nanothermometry techniques, a diamond quantum thermometer can be operated over a wide temperature range and a sensor spatial scale ranging from nanometres to micrometres. Further, diamond quantum thermometry is employed in several applications, including electronics and biology, to explore these fields with nanoscale temperature measurements. This review covers the operational principles of diamond quantum thermometry for spin-based and all-optical methods, material development of diamonds with a focus on thermometry, and examples of applications in electrical and biological systems with demand-based technological requirements.
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Affiliation(s)
- Masazumi Fujiwara
- Department of Chemistry, Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushimanaka, Kita-ku, Okayama 700-8530, Japan
- Department of Chemistry, Graduate School of Science, Osaka City University, Sumiyoshi-ku, Osaka 558-8585, Japan
| | - Yutaka Shikano
- Graduate School of Science and Technology, Gunma University, 4-2 Aramaki, Maebashi, Gunma 371-8510, Japan
- Quantum Computing Center, Keio University, 3-14-1 Hiyoshi, Kohoku, Yokohama 223-8522, Japan
- Institute for Quantum Studies, Chapman University, 1 University Dr, Orange, CA 92866, United States of America
- JST PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
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Zhou J, Xie M, Ji H, Cui A, Ye Y, Jiang K, Shang L, Zhang J, Hu Z, Chu J. Mixed-Dimensional Van der Waals Heterostructure Photodetector. ACS APPLIED MATERIALS & INTERFACES 2020; 12:18674-18682. [PMID: 32208640 DOI: 10.1021/acsami.0c01076] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Van der Waals (vdW) heterostructures, integrated two-dimensional (2D) materials with various functional materials, provide a distinctive platform for next-generation optoelectronics with unique flexibility and high performance. However, exploring the vdW heterostructures combined with strongly correlated electronic materials is hitherto rare. Herein, a novel temperature-sensitive photodetector based on the GaSe/VO2 mixed-dimensional vdW heterostructure is discovered. Compared with previous devices, our photodetector exhibits excellent enhanced performance, with an external quantum efficiency of up to 109.6% and the highest responsivity (358.1 mA·W-1) under a 405 nm laser. Interestingly, we show that the heterostructure overcomes the limitation of a single material under the interaction between VO2 and GaSe, where the photoresponse is highly sensitive to temperature and can be further vanished at the critical value. The metal-insulator transition of VO2, which controls the peculiar band-structure evolution across the heterointerface, is demonstrated to manipulate the photoresponse variation. This study enables us to elucidate the method of manipulating 2D materials by strongly correlated electronic materials, paving the way for developing high-performance and special optoelectronic applications.
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Affiliation(s)
- Jiaoyan Zhou
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Mingzhang Xie
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Huan Ji
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Anyang Cui
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Yan Ye
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
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8
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Ziabari A, Parsa M, Xuan Y, Bahk JH, Yazawa K, Alvarez FX, Shakouri A. Far-field thermal imaging below diffraction limit. OPTICS EXPRESS 2020; 28:7036-7050. [PMID: 32225939 DOI: 10.1364/oe.380866] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2019] [Accepted: 02/05/2020] [Indexed: 06/10/2023]
Abstract
Non-uniform self-heating and temperature hotspots are major concerns compromising the performance and reliability of submicron electronic and optoelectronic devices. At deep submicron scales where effects such as contact-related artifacts and diffraction limits accurate measurements of temperature hotspots, non-contact thermal characterization can be extremely valuable. In this work, we use a Bayesian optimization framework with generalized Gaussian Markov random field (GGMRF) prior model to obtain accurate full-field temperature distribution of self-heated metal interconnects from their thermoreflectance thermal images (TRI) with spatial resolution 2.5 times below Rayleigh limit for 530nm illumination. Finite element simulations along with TRI experimental data were used to characterize the point spread function of the optical imaging system. In addition, unlike iterative reconstruction algorithms that use ad hoc regularization parameters in their prior models to obtain the best quality image, we used numerical experiments and finite element modeling to estimate the regularization parameter for solving a real experimental inverse problem.
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Choe HS, Prabhakar R, Wehmeyer G, Allen FI, Lee W, Jin L, Li Y, Yang P, Qiu CW, Dames C, Scott M, Minor A, Bahk JH, Wu J. Ion Write Microthermotics: Programing Thermal Metamaterials at the Microscale. NANO LETTERS 2019; 19:3830-3837. [PMID: 31059272 DOI: 10.1021/acs.nanolett.9b00984] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Considerable advances in manipulating heat flow in solids have been made through the innovation of artificial thermal structures such as thermal diodes, camouflages, and cloaks. Such thermal devices can be readily constructed only at the macroscale by mechanically assembling different materials with distinct values of thermal conductivity. Here, we extend these concepts to the microscale by demonstrating a monolithic material structure on which nearly arbitrary microscale thermal metamaterial patterns can be written and programmed. It is based on a single, suspended silicon membrane whose thermal conductivity is locally, continuously, and reversibly engineered over a wide range (between 2 and 65 W/m·K) and with fine spatial resolution (10-100 nm) by focused ion irradiation. Our thermal cloak demonstration shows how ion-write microthermotics can be used as a lithography-free platform to create thermal metamaterials that control heat flow at the microscale.
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Affiliation(s)
- Hwan Sung Choe
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Radhika Prabhakar
- Department of Electrical Engineering and Computer Science , University of Cincinnati , Cincinnati , Ohio 45221 , United States
| | - Geoff Wehmeyer
- Department of Mechanical Engineering , University of California , Berkeley , California 94720 , United States
| | - Frances I Allen
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
| | - Woochul Lee
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
- Department of Chemistry , University of California , Berkeley , California 94720 , United States
| | - Lei Jin
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Ying Li
- Department of Electrical and Computer Engineering , National University of Singapore , Singapore , 117583
| | - Peidong Yang
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
- Department of Chemistry , University of California , Berkeley , California 94720 , United States
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering , National University of Singapore , Singapore , 117583
| | - Chris Dames
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
- Department of Mechanical Engineering , University of California , Berkeley , California 94720 , United States
| | - Mary Scott
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
- The Molecular Foundry , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Andrew Minor
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
- The Molecular Foundry , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Je-Hyeong Bahk
- Department of Electrical Engineering and Computer Science , University of Cincinnati , Cincinnati , Ohio 45221 , United States
| | - Junqiao Wu
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
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10
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Wang Y, Sun X, Chen Z, Cai Z, Zhou H, Lu TM, Shi J. Defect-engineered epitaxial VO 2±δ in strain engineering of heterogeneous soft crystals. SCIENCE ADVANCES 2018; 4:eaar3679. [PMID: 29806024 PMCID: PMC5969812 DOI: 10.1126/sciadv.aar3679] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2017] [Accepted: 04/17/2018] [Indexed: 05/16/2023]
Abstract
The success of strain engineering has made a step further for the enhancement of material properties and the introduction of new physics, especially with the discovery of the critical roles of strain in the heterogeneous interface between two dissimilar materials (for example, FeSe/SrTiO3). On the other hand, the strain manipulation has been limited to chemical epitaxy and nanocomposites that, to a large extent, limit the possible material systems that can be explored. By defect engineering, we obtained, for the first time, dense three-dimensional strongly correlated VO2±δ epitaxial nanoforest arrays that can be used as a novel "substrate" for dynamic strain engineering, due to its metal-insulator transition. The highly dense nanoforest is promising for the possible realization of bulk strain similar to the effect of nanocomposites. By growing single-crystalline halide perovskite CsPbBr3, a mechanically soft and emerging semiconducting material, onto the VO2±δ, a heterogeneous interface is created that can entail a ~1% strain transfer upon the metal-insulator transition of VO2±δ. This strain is large enough to trigger a structural phase transition featured by PbX6 octahedral tilting along with a modification of the photoluminescence energy landscape in halide perovskite. Our findings suggest a promising strategy of dynamic strain engineering in a heterogeneous interface carrying soft and strain-sensitive semiconductors that can happen at a larger volumetric value surpassing the conventional critical thickness limit.
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Affiliation(s)
- Yiping Wang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - Xin Sun
- Department of Physics, Applied Physics, and Astronomy Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - Zhizhong Chen
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - Zhonghou Cai
- X-ray Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Hua Zhou
- X-ray Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
| | - Toh-Ming Lu
- Department of Physics, Applied Physics, and Astronomy Rensselaer Polytechnic Institute, Troy, NY 12180, USA
| | - Jian Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
- Corresponding author.
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11
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Li M, Magdassi S, Gao Y, Long Y. Hydrothermal Synthesis of VO 2 Polymorphs: Advantages, Challenges and Prospects for the Application of Energy Efficient Smart Windows. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1701147. [PMID: 28722273 DOI: 10.1002/smll.201701147] [Citation(s) in RCA: 86] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2017] [Revised: 06/03/2017] [Indexed: 06/07/2023]
Abstract
Vanadium dioxide (VO2 ) is a widely studied inorganic phase change material, which has a reversible phase transition from semiconducting monoclinic to metallic rutile phase at a critical temperature of τc ≈ 68 °C. The abrupt decrease of infrared transmittance in the metallic phase makes VO2 a potential candidate for thermochromic energy efficient windows to cut down building energy consumption. However, there are three long-standing issues that hindered its application in energy efficient windows: high τc , low luminous transmittance (Tlum ), and undesirable solar modulation ability (ΔTsol ). Many approaches, including nano-thermochromism, porous films, biomimetic surface reconstruction, gridded structures, antireflective overcoatings, etc, have been proposed to tackle these issues. The first approach-nano-thermochromism-which is to integrate VO2 nanoparticles in a transparent matrix, outperforms the rest; while the thermochromic performance is determined by particle size, stoichiometry, and crystallinity. A hydrothermal method is the most common method to fabricate high-quality VO2 nanoparticles, and has its own advantages of large-scale synthesis and precise phase control of VO2 . This Review focuses on hydrothermal synthesis, physical properties of VO2 polymorphs, and their transformation to thermochromic VO2 (M), and discusses the advantages, challenges, and prospects of VO2 (M) in energy-efficient smart windows application.
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Affiliation(s)
- Ming Li
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Shlomo Magdassi
- Institute of Chemistry, The Hebrew University, Edmond Safra Campus, Jerusalem, 91904, Israel
| | - Yanfeng Gao
- School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China
| | - Yi Long
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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12
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Sohn JI, Cha SN, Son SB, Kim JM, Welland ME, Hong WK. Metastable state-induced consecutive step-like negative differential resistance behaviors in single crystalline VO 2 nanobeams. NANOSCALE 2017; 9:8200-8206. [PMID: 28580984 DOI: 10.1039/c7nr00318h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We demonstrate the current-dependent consecutive appearance of two different negative differential resistance (NDR) transitions in a single crystalline VO2 nanobeam epitaxially grown on a c-cut sapphire substrate. It is revealed that the first NDR occurs at an approximately constant current level as a result of the carrier injection-induced transition, independent of a thermally induced phase transition. In contrast, it is observed that the second NDR exhibits a temperature-dependent behavior and current values triggering the metal-insulator transition (MIT) are strongly mediated by Joule heating effects in a phase coexisting temperature range. Moreover, we find that the electrically and thermally triggered MIT behavior can be closely related with the alternate occurrence of current-induced multiple insulating and metallic phase coexistence in the nanobeam. These findings indicate that the current density passing through VO2 plays a critical role in both the electrical and structural phase transitions.
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Affiliation(s)
- Jung Inn Sohn
- Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK.
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13
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Yajima T, Nishimura T, Toriumi A. Identifying the Collective Length in VO 2 Metal-Insulator Transitions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1603113. [PMID: 28092142 DOI: 10.1002/smll.201603113] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2016] [Revised: 11/29/2016] [Indexed: 06/06/2023]
Abstract
The "collective length" in VO2 metal-insulator transitions is identified by controlling nanoscale dopant distribution in thin films. The crossover from the local transition to the collective transition is observed, which originates from the increased instability of the metal-insulator domain boundary. This instability renders the transition collective within the "collective length", which will enable the design of collective electronic devices.
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Affiliation(s)
- Takeaki Yajima
- Department of Materials Engineering, University of Tokyo, Bunkyo, Tokyo, 113-8656, Japan
| | - Tomonori Nishimura
- Department of Materials Engineering, University of Tokyo, Bunkyo, Tokyo, 113-8656, Japan
| | - Akira Toriumi
- Department of Materials Engineering, University of Tokyo, Bunkyo, Tokyo, 113-8656, Japan
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14
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Wang X, Gao H. Distinguishing the Photothermal and Photoinjection Effects in Vanadium Dioxide Nanowires. NANO LETTERS 2015; 15:7037-7042. [PMID: 26422776 DOI: 10.1021/acs.nanolett.5b03086] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Vanadium dioxide (VO2) has drawn significant attention for its unique metal-to-insulator transition near the room temperature. The high electrical resistivity below the transition temperature (∼68 °C) is a result of the strong electron correlation with the assistance of lattice (Peierls) distortion. Theoretical calculations indicated that the strong interelectron interactions might induce intriguing optoelectronic phenomena, such as the multiple exciton generation (MEG), a process desirable for efficient optoelectronics and photovoltaics. However, the resistivity of VO2 is quite temperature sensitive, and therefore, the light-induced conductivity in VO2 has often been attributed to the photothermal effects. In this work, we distinguished the photothermal and photoinjection effects in VO2 nanowires by varying the chopping frequency of the optical illumination. We found that, in our VO2 nanowires, the relatively slow photothermal processes can be well suppressed when the chopping frequency is >2 kHz, whereas the fast photoinjection component (direct photoexcitation of charge carriers) remains constant at all chopping frequencies. By separating the photothermal and photoinjection processes, our work set the basis for further studies of carrier dynamics under optical excitations in strongly correlated materials.
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Affiliation(s)
- Xi Wang
- Department of Physics and ‡Materials Science Program, Florida State University , Tallahassee, Florida 32306, United States
| | - Hanwei Gao
- Department of Physics and ‡Materials Science Program, Florida State University , Tallahassee, Florida 32306, United States
- National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States
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15
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Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams. Sci Rep 2015; 5:10861. [PMID: 26040637 PMCID: PMC4455114 DOI: 10.1038/srep10861] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2015] [Accepted: 05/01/2015] [Indexed: 12/05/2022] Open
Abstract
Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain.
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16
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Fractal Nature of Metallic and Insulating Domain Configurations in a VO2 Thin Film Revealed by Kelvin Probe Force Microscopy. Sci Rep 2015; 5:10417. [PMID: 25982229 PMCID: PMC4434847 DOI: 10.1038/srep10417] [Citation(s) in RCA: 31] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/19/2015] [Accepted: 04/09/2015] [Indexed: 01/27/2023] Open
Abstract
We investigated the surface work function (WS) and its spatial distribution for epitaxial VO2/TiO2 thin films using Kelvin probe force microscopy (KPFM). Nearly grain-boundary-free samples allowed observation of metallic and insulating domains with distinct WS values, throughout the metal–insulator transition. The metallic fraction, estimated from WS maps, describes the evolution of the resistance based on a two-dimensional percolation model. The KPFM measurements also revealed the fractal nature of the domain configuration.
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17
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Yang M, Yang Y, Hong B, Wang L, Luo Z, Li X, Kang C, Li M, Zong H, Gao C. Surface-growth-mode-induced strain effects on the metal–insulator transition in epitaxial vanadium dioxide thin films. RSC Adv 2015. [DOI: 10.1039/c5ra13490k] [Citation(s) in RCA: 36] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
The surface growth mode can induce the anomalous compressive strain in thicker VO2/Al2O3 epitaxial films, which can't be explained by conventional epitaxial lattice-mismatch. Strain may be an effective tool for manipulating MIT of the VO2 films.
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Affiliation(s)
- Mengmeng Yang
- National Synchrotron Radiation Laboratory & Collaborative Innovation Center of Chemistry for Energy Materials
- University of Science and Technology of China
- Hefei
- China
| | - Yuanjun Yang
- National Synchrotron Radiation Laboratory & Collaborative Innovation Center of Chemistry for Energy Materials
- University of Science and Technology of China
- Hefei
- China
- CAS Key Laboratory of Materials for Energy Conversion
| | - Bin Hong
- National Synchrotron Radiation Laboratory & Collaborative Innovation Center of Chemistry for Energy Materials
- University of Science and Technology of China
- Hefei
- China
- CAS Key Laboratory of Materials for Energy Conversion
| | - Liangxin Wang
- National Synchrotron Radiation Laboratory & Collaborative Innovation Center of Chemistry for Energy Materials
- University of Science and Technology of China
- Hefei
- China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory & Collaborative Innovation Center of Chemistry for Energy Materials
- University of Science and Technology of China
- Hefei
- China
| | - Xiaoguang Li
- Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics
- University of Science and Technology of China
- Hefei
- China
| | - Chaoyang Kang
- School of Physics and Chemistry
- Henan Polytechnic University
- Jiaozuo
- China
| | - Ming Li
- School of Physics and Chemistry
- Henan Polytechnic University
- Jiaozuo
- China
| | - Haitao Zong
- School of Physics and Chemistry
- Henan Polytechnic University
- Jiaozuo
- China
| | - Chen Gao
- National Synchrotron Radiation Laboratory & Collaborative Innovation Center of Chemistry for Energy Materials
- University of Science and Technology of China
- Hefei
- China
- CAS Key Laboratory of Materials for Energy Conversion
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