Water-gel for gating graphene transistors

Programmable Soft-Matter Electronics

The hydrogels of the polyelectrolytes polyethylenimine and poly(acrylic acid) are used to form a thin-layer interface on the gallium-indium eutectic alloy's surface. The proposed method of gradually increasing the applied voltage reveals the possibility of formation of electronic components: diode, capacitor, resistor, and memristor. The components can be changed to each other many times. A multilayer perceptron model with one hidden layer and 12 nodes allows identifying hydrogels' composition and automatically setting the desired architecture of electronic components. The design of electronic components makes it possible to easy-to-produce new electronic parts and programmable soft-matter electronics.

Gate-Free Hydrogel-Graphene Transistors as Underwater Microphones

A perfect impedance match from water-rich hydrogels to an oceanic background makes hydrogel microphones ideal for long-distance, underwater acoustic reception with zero reflection. A novel hydrogel-graphene transistor is thus designed to work under a gate-free mode, in which a sheet of graphene directly converts mechanical vibrations from a microstructured hydrogel into electrical current. This work shows that the quantum capacitance of graphene plays an important role in determining the shift of the Fermi level in graphene and subsequently the amplitude of the current signal. Once employed underwater, this device provides a response to sound waves with high stability, low noise, and high sensitivity in a much-needed low-frequency domain.

Gelatin Hydrogel-Based Organic Electrochemical Transistors and Their Integrated Logic Circuits

We suggest gelatin hydrogel as an electrolyte and demonstrate organic electrochemical transistors (OECTs) based on a sheet of gelatin. We also modulate electrical characteristics of the OECT with respect to pH condition of the gelatin hydrogel from acid to base and analyze its characteristics based on the electrochemical theory. Moreover, we extend the gelatin-based OECT to electrochemical logic circuits, for example, NOT, NOR, and NAND gates.

Integrated Circuits Comprising Patterned Functional Liquids

Solid-state heterostructures are the cornerstone of modern electronics. To enhance the functionality and performance of integrated circuits, the spectrum of materials used in the heterostructures is being expanded by an increasing number of compounds and elements of the periodic table. While the integration of liquids and solid-liquid interfaces into such systems would allow unique and advanced functional properties and would enable integrated nanoionic circuits, solid-state heterostructures that incorporate liquids have not been considered thus far. Here solid-state heterostructures with integrated liquids are proposed, realized, and characterized, thereby opening a vast, new phase space of materials and interfaces for integrated circuits. Devices containing tens of microscopic capacitors and field-effect transistors are fabricated by using integrated patterned NaCl aqueous solutions. This work paves the way to integrated electronic circuits that include highly integrated liquids, thus yielding a wide array of novel research and application opportunities based on microscopic solid/liquid systems.

Wafer-Scale Microwire Transistor Array Fabricated via Evaporative Assembly

One-dimensional (1D) nano/microwires have attracted significant attention as promising building blocks for various electronic and optical device applications. The integration of these elements into functional device networks with controlled alignment and density presents a significant challenge for practical device applications. Here, we demonstrated the fabrication of wafer-scale microwire field-effect transistor (FET) arrays based on well-aligned inorganic semiconductor microwires (indium-gallium-zinc-oxide (IGZO)) and organic polymeric insulator microwires fabricated via a simple and large-area evaporative assembly technique. This microwire fabrication method offers a facile approach to precisely manipulating the channel dimensions of the FETs. The resulting solution-processed monolithic IGZO microwire FETs exhibited a maximum electron mobility of 1.02 cm(2) V(-1) s(-1) and an on/off current ratio of 1 × 10(6). The appropriate choice of the polymeric microwires used to define the channel lengths enabled fine control over the threshold voltages of the devices, which were employed to fabricate high-performance depletion-load inverters. Low-voltage-operated microwire FETs were successfully fabricated on a plastic substrate using a high-capacitance ion gel gate dielectric. The microwire fabrication technique involving evaporative assembly provided a facile, effective, and reliable method for preparing flexible large-area electronics.

An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes

High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene.

Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures

Low-voltage complementary circuits comprising n-type and p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on-state current densities (>3000 A cm(-2) ) and on/off current ratios (>10(4) ) in a narrow voltage window (<3 V).

Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors

In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

3D hydrogel scaffold doped with 2D graphene materials for biosensors and bioelectronics

Hydrogels consisting of three-dimensional (3D) polymeric networks have found a wide range of applications in biotechnology due to their large water capacity, high biocompatibility, and facile functional versatility. The hydrogels with stimulus-responsive swelling properties have been particularly instrumental to realizing signal transduction in biosensors and bioelectronics. Graphenes are two-dimensional (2D) nanomaterials with unprecedented physical, optical, and electronic properties and have also found many applications in biosensors and bioelectronics. These two classes of materials present complementary strengths and limitations which, when effectively coupled, can result in significant synergism in their electrical, mechanical, and biocompatible properties. This report reviews recent advances made with hydrogel and graphene materials for the development of high-performance bioelectronics devices. The report focuses on the interesting intersection of these materials wherein 2D graphenes are hybridized with 3D hydrogels to develop the next generation biosensors and bioelectronics.

Effective particle–hole symmetry breaking, quasi-bond state engineering and optical absorption in graphene based gated dot–ring nanostructures

We have studied the nature- and character- switching of relativistic bound states in quantum dot–ring structures produced by a set of circular concentric metallic gates on a graphene sheet placed over a substrate.

Electrolyte-gated graphene Schottky barrier transistors

A new device architecture for flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene-organic-semiconductor-metal heterostructures and ion gel gate dielectrics is demonstrated. The devices show well-behaved p- and n-type characteristics under low-voltage operation (<1 V), yielding high current densities (>100 mA cm(-2) ) and on/off current ratios (>10(3) ).

Apparent pH sensitivity of solution-gated graphene transistors

Solution-gated graphene transistors were developed recently for use in pH sensor applications. The device operation is understood to rely on the capability of hydronium and hydroxide ions in solution to change the electrical properties of graphene. However, hydronium and hydroxide ions are accompanied by other ionic species in a typical acidic or basic solution and, therefore, the roles of these other ionic species must be also considered to fully understand the pH response of such devices. Using series of pH buffer solutions designed carefully, we verified that the magnitude and even the direction of pH-dependent Dirac voltage (VDirac) shift (the typical pH sensing indicator) depend strongly on the concentration and composition of the buffers used. The results indicate that the interpretation of the apparent pH-dependent VDirac response of a solution-gated graphene transistor must include the contributions of the additional ions in the solution.