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Lee J, Yang K, Kwon JY, Kim JE, Han DI, Lee DH, Yoon JH, Park MH. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide. NANO CONVERGENCE 2023; 10:55. [PMID: 38038784 PMCID: PMC10692067 DOI: 10.1186/s40580-023-00403-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2023] [Accepted: 11/08/2023] [Indexed: 12/02/2023]
Abstract
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (Vo), which is the most frequently observed intrinsic defect in HfO2-based films, determines the physical/electrical properties and device performance. Vo influences the polymorphism and the resulting ferroelectric properties of HfO2. Moreover, the switching speed and endurance of ferroelectric memories are strongly correlated to the Vo concentration and redistribution. They also strongly influence the device-to-device and cycle-to-cycle variability of integrated circuits based on ferroelectric memories. The concentration, migration, and agglomeration of Vo form the main mechanism behind the RS behavior observed in HfO2, suggesting that the device performance and reliability in terms of the operating voltage, switching speed, on/off ratio, analog conductance modulation, endurance, and retention are sensitive to Vo. Therefore, the mechanism of Vo formation and its effects on the chemical, physical, and electrical properties in ferroelectric and RS HfO2 should be understood. This study comprehensively reviews the literature on Vo in HfO2 from the formation and influencing mechanism to material properties and device performance. This review contributes to the synergetic advances of current knowledge and technology in emerging HfO2-based semiconductor devices.
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Affiliation(s)
- Jaewook Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Kun Yang
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Ju Young Kwon
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea
| | - Ji Eun Kim
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea
| | - Dong In Han
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Dong Hyun Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Jung Ho Yoon
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea.
| | - Min Hyuk Park
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
- Research Institute of Advanced Materials, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
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2
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Berni A, Amine A, García-Guzmán JJ, Cubillana-Aguilera L, Palacios-Santander JM. Feather-like Gold Nanostructures Anchored onto 3D Mesoporous Laser-Scribed Graphene: A Highly Sensitive Platform for Enzymeless Glucose Electrochemical Detection in Neutral Media. BIOSENSORS 2023; 13:678. [PMID: 37504077 PMCID: PMC10377420 DOI: 10.3390/bios13070678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Revised: 06/16/2023] [Accepted: 06/21/2023] [Indexed: 07/29/2023]
Abstract
The authors present a novel sensing platform for a disposable electrochemical, non-enzymatic glucose sensor strip at physiological pH. The sensing material is based on dendritic gold nanostructures (AuNs) resembling feather branches, which are electrodeposited onto a laser-scribed 3D graphene electrode (LSGE). The LSGEs were fabricated via a one-step laser scribing process on a commercially available polyimide sheet. This study investigates several parameters that influence the morphology of the deposited Au nanostructures and the catalytic activity toward glucose electro-oxidation. The electrocatalytic activity of the AuNs-LSGE was evaluated using cyclic voltammetry (CV), linear sweep voltammetry (LSV), and amperometry and was compared to commercially available carbon electrodes prepared under the same electrodeposition conditions. The sensor demonstrated good stability and high selectivity of the amperometric response in the presence of interfering agents, such as ascorbic acid, when a Nafion membrane was applied over the electrode surface. The proposed sensing strategy offers a wide linear detection range, from 0.5 to 20 mM, which covers normal and elevated levels of glucose in the blood, with a detection limit of 0.21 mM. The AuNs-LSGE platform exhibits great potential for use as a disposable glucose sensor strip for point-of-care applications, including self-monitoring and food management. Its non-enzymatic features reduce dependence on enzymes, making it suitable for practical and cost-effective biosensing solutions.
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Affiliation(s)
- Achraf Berni
- Laboratory of Process Engineering and Environment, Faculty of Sciences and Techniques, Hassan II University of Casablanca, P.A. 149, Mohammedia 28810, Morocco
- Department of Analytical Chemistry, Institute of Research on Electron Microscopy and Materials (IMEYMAT), Faculty of Sciences, Campus de Excelencia Internacional del Mar (CEIMAR), University of Cadiz, Campus Universitario de Puerto Real, Polígono del Río San Pedro S/N, 11510 Puerto Real, Cádiz, Spain
| | - Aziz Amine
- Laboratory of Process Engineering and Environment, Faculty of Sciences and Techniques, Hassan II University of Casablanca, P.A. 149, Mohammedia 28810, Morocco
| | - Juan José García-Guzmán
- Department of Analytical Chemistry, Institute of Research on Electron Microscopy and Materials (IMEYMAT), Faculty of Sciences, Campus de Excelencia Internacional del Mar (CEIMAR), University of Cadiz, Campus Universitario de Puerto Real, Polígono del Río San Pedro S/N, 11510 Puerto Real, Cádiz, Spain
| | - Laura Cubillana-Aguilera
- Department of Analytical Chemistry, Institute of Research on Electron Microscopy and Materials (IMEYMAT), Faculty of Sciences, Campus de Excelencia Internacional del Mar (CEIMAR), University of Cadiz, Campus Universitario de Puerto Real, Polígono del Río San Pedro S/N, 11510 Puerto Real, Cádiz, Spain
| | - José María Palacios-Santander
- Department of Analytical Chemistry, Institute of Research on Electron Microscopy and Materials (IMEYMAT), Faculty of Sciences, Campus de Excelencia Internacional del Mar (CEIMAR), University of Cadiz, Campus Universitario de Puerto Real, Polígono del Río San Pedro S/N, 11510 Puerto Real, Cádiz, Spain
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3
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Lanza M, Hui F, Wen C, Ferrari AC. Resistive Switching Crossbar Arrays Based on Layered Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205402. [PMID: 36094019 DOI: 10.1002/adma.202205402] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Revised: 08/25/2022] [Indexed: 06/15/2023]
Abstract
Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices mm- 2 ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures-of-merit and procedures to implement LM-based RS devices are defined. LM-based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm2 ) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.
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Affiliation(s)
- Mario Lanza
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Fei Hui
- School of Materials Science and Engineering, The Key Laboratory of Material, Processing and Mold of the Ministry of Education, Henan Key Laboratory of Advanced, Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Chao Wen
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
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4
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Combined Additive and Laser-Induced Processing of Functional Structures for Monitoring under Deformation. Polymers (Basel) 2023; 15:polym15020443. [PMID: 36679324 PMCID: PMC9860559 DOI: 10.3390/polym15020443] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 01/07/2023] [Accepted: 01/12/2023] [Indexed: 01/18/2023] Open
Abstract
This research introduces a readily available and non-chemical combinatorial production approach, known as the laser-induced writing process, to achieve laser-processed conductive graphene traces. The laser-induced graphene (LIG) structure and properties can be improved by adjusting the laser conditions and printing parameters. This method demonstrates the ability of laser-induced graphene (LIG) to overcome the electrothermal issues encountered in electronic devices. To additively process the PEI structures and the laser-induced surface, a high-precision laser nScrypt printer with different power, speed, and printing parameters was used. Raman spectroscopy and scanning electron microscopy analysis revealed similar results for laser-induced graphene morphology and structural chemistry. Significantly, the 3.2 W laser-induced graphene crystalline size (La; 159 nm) is higher than the higher power (4 W; 29 nm) formation due to the surface temperature and oxidation. Under four-point probe electrical property measurements, at a laser power of 3.8 W, the resistivity of the co-processed structure was three orders of magnitude larger. The LIG structure and property improvement are possible by varying the laser conditions and the printing parameters. The lowest gauge factor (GF) found was 17 at 0.5% strain, and the highest GF found was 141.36 at 5%.
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Banerjee W, Kashir A, Kamba S. Hafnium Oxide (HfO 2 ) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107575. [PMID: 35510954 DOI: 10.1002/smll.202107575] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2022] [Revised: 03/24/2022] [Indexed: 06/14/2023]
Abstract
Hafnium oxide (HfO2 ) is one of the mature high-k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high-speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high-density memory and neuromorphic devices are examined, and the various challenges of HfO2 -based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.
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Affiliation(s)
- Writam Banerjee
- Center for Single Atom-based Semiconductor Device, Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Alireza Kashir
- Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Prague 8, 182 21, Czech Republic
| | - Stanislav Kamba
- Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Prague 8, 182 21, Czech Republic
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6
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Antad V, Shaikh PA, Biswas A, Rajput SS, Deo S, Shelke MV, Patil S, Ogale S. Resistive Switching in HfO 2-x/La 0.67Sr 0.33MnO 3 Heterostructures: An Intriguing Case of Low H-Field Susceptibility of an E-Field Controlled Active Interface. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54133-54142. [PMID: 34726370 DOI: 10.1021/acsami.1c15082] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
High-performance nonvolatile resistive random access memories (ReRAMs) and their small stimuli control are of immense interest for high-speed computation and big-data processing in the emerging Internet of Things (IoT) arena. Here, we examine the resistive switching (RS) behavior in growth-controlled HfO2/La0.67Sr0.33MnO3 (LSMO) heterostructures and their tunability in a low magnetic field. It is demonstrated that oxygen-deficient HfO2 films show bipolar switching with a high on/off ratio, stable retention, as well as good endurance owing to the orthorhombic-rich phase constitution and charge (de)trapping-enabled Schottky-type conduction. Most importantly, we have demonstrated that RS can be tuned by a very low externally applied magnetic field (∼0-30 mT). Remarkably, application of a magnetic field of 30 mT causes RS to be fully quenched and frozen in the high resistive state (HRS) even after the removal of the magnetic field. However, the quenched state could be resurrected by applying a higher bias voltage than the one for initial switching. This is argued to be a consequence of the electronically and ionically "active" nature of the HfO2-x/LSMO interface on both sides and its susceptibility to the electric and low magnetic field effects. This result could pave the way for new designs of interface-engineered high-performance oxitronic ReRAM devices.
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Affiliation(s)
- Vivek Antad
- Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER) Pune, Pune 411008, India
- Advanced Functional Materials Laboratory, Department of Physics, MES's Nowrosjee Wadia College of Arts and Science, Pune 411001, India
| | - Parvez A Shaikh
- Department of Physics, AKI's Poona College of Arts, Science and Commerce, Pune 411001, India
| | - Abhijit Biswas
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Shatruhan Singh Rajput
- Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER) Pune, Pune 411008, India
| | - Shrinivas Deo
- Centre for Materials Characterization, CSIR-NCL, Pune 411008, India
| | - Manjusha V Shelke
- Physical and Materials Chemistry Division, Polymer and Advanced Materials Laboratory, CSIR-NCL, Pune 411008, India
- Academy of Scientific & Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Shivprasad Patil
- Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER) Pune, Pune 411008, India
| | - Satishchandra Ogale
- Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research (IISER) Pune, Pune 411008, India
- Research Institute for Sustainable Energy (RISE), TCG Centres for Research and Education in Science and Technology (TCG-CREST), Kolkata 700091, India
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7
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Beduk T, Beduk D, de Oliveira Filho JI, Zihnioglu F, Cicek C, Sertoz R, Arda B, Goksel T, Turhan K, Salama KN, Timur S. Rapid Point-of-Care COVID-19 Diagnosis with a Gold-Nanoarchitecture-Assisted Laser-Scribed Graphene Biosensor. Anal Chem 2021; 93:8585-8594. [PMID: 34081452 PMCID: PMC8189039 DOI: 10.1021/acs.analchem.1c01444] [Citation(s) in RCA: 91] [Impact Index Per Article: 30.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/06/2021] [Accepted: 05/20/2021] [Indexed: 12/17/2022]
Abstract
The global pandemic caused by the severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) virus has revealed the urgent need for accurate, rapid, and affordable diagnostic tests for epidemic understanding and management by monitoring the population worldwide. Though current diagnostic methods including real-time polymerase chain reaction (RT-PCR) provide sensitive detection of SARS-CoV-2, they require relatively long processing time, equipped laboratory facilities, and highly skilled personnel. Laser-scribed graphene (LSG)-based biosensing platforms have gained enormous attention as miniaturized electrochemical systems, holding an enormous potential as point-of-care (POC) diagnostic tools. We describe here a miniaturized LSG-based electrochemical sensing scheme for coronavirus disease 2019 (COVID-19) diagnosis combined with three-dimensional (3D) gold nanostructures. This electrode was modified with the SARS-CoV-2 spike protein antibody following the proper surface modifications proved by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) characterizations as well as electrochemical techniques. The system was integrated into a handheld POC detection system operated using a custom smartphone application, providing a user-friendly diagnostic platform due to its ease of operation, accessibility, and systematic data management. The analytical features of the electrochemical immunoassay were evaluated using the standard solution of S-protein in the range of 5.0-500 ng/mL with a detection limit of 2.9 ng/mL. A clinical study was carried out on 23 patient blood serum samples with successful COVID-19 diagnosis, compared to the commercial RT-PCR, antibody blood test, and enzyme-linked immunosorbent assay (ELISA) IgG and IgA test results. Our test provides faster results compared to commercial diagnostic tools and offers a promising alternative solution for next-generation POC applications.
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Affiliation(s)
- Tutku Beduk
- Sensors Lab, Advanced Membranes and Porous Materials
Center, Computer, Electrical and Mathematical Science and Engineering Division,
King Abdullah University of Science and Technology (KAUST),
Thuwal 23955-6900, Saudi Arabia
| | - Duygu Beduk
- Central Research Test and Analysis Laboratory
Application and Research Center, Ege University, 35100 Bornova,
Izmir, Turkey
| | - José Ilton de Oliveira Filho
- Sensors Lab, Advanced Membranes and Porous Materials
Center, Computer, Electrical and Mathematical Science and Engineering Division,
King Abdullah University of Science and Technology (KAUST),
Thuwal 23955-6900, Saudi Arabia
| | - Figen Zihnioglu
- Department of Biochemistry, Faculty of Science,
Ege University, 35100 Bornova, Izmir,
Turkey
| | - Candan Cicek
- Department of Medical Microbiology, Faculty of
Medicine, Ege University, 35100 Bornova, Izmir,
Turkey
| | - Ruchan Sertoz
- Department of Medical Microbiology, Faculty of
Medicine, Ege University, 35100 Bornova, Izmir,
Turkey
| | - Bilgin Arda
- Department of Infectious Diseases and Clinical
Microbiology, Faculty of Medicine, Ege University, 35100
Bornova, Izmir, Turkey
| | - Tuncay Goksel
- Department of Pulmonary Medicine, Faculty of Medicine,
Ege University, 35100 Bornova, Izmir,
Turkey
- EGESAM-Ege University Translational
Pulmonary Research Center, 35100 Bornova, Izmir,
Turkey
| | - Kutsal Turhan
- Department of Thoracic Surgery, Faculty of Medicine,
Ege University, 35100 Bornova, Izmir,
Turkey
| | - Khaled N. Salama
- Sensors Lab, Advanced Membranes and Porous Materials
Center, Computer, Electrical and Mathematical Science and Engineering Division,
King Abdullah University of Science and Technology (KAUST),
Thuwal 23955-6900, Saudi Arabia
| | - Suna Timur
- Central Research Test and Analysis Laboratory
Application and Research Center, Ege University, 35100 Bornova,
Izmir, Turkey
- Department of Biochemistry, Faculty of Science,
Ege University, 35100 Bornova, Izmir,
Turkey
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8
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Lahcen AA, Rauf S, Beduk T, Durmus C, Aljedaibi A, Timur S, Alshareef HN, Amine A, Wolfbeis OS, Salama KN. Electrochemical sensors and biosensors using laser-derived graphene: A comprehensive review. Biosens Bioelectron 2020; 168:112565. [PMID: 32927277 DOI: 10.1016/j.bios.2020.112565] [Citation(s) in RCA: 73] [Impact Index Per Article: 18.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2020] [Revised: 08/22/2020] [Accepted: 08/24/2020] [Indexed: 12/12/2022]
Abstract
Laser-derived graphene (LDG) technology is gaining attention as a promising material for the development of novel electrochemical sensors and biosensors. Compared to established methods for graphene synthesis, LDG provides many advantages such as cost-effectiveness, fast electron mobility, mask-free, green synthesis, good electrical conductivity, porosity, mechanical stability, and large surface area. This review discusses, in a critical way, recent advancements in this field. First, we focused on the fabrication and doping of LDG platforms using different strategies. Next, the techniques for the modification of LDG sensors using nanomaterials, conducting polymers, biological and artificial receptors are presented. We then discussed the advances achieved for various LDG sensing and biosensing schemes and their applications in the fields of environmental monitoring, food safety, and clinical diagnosis. Finally, the drawbacks and limitations of LDG based electrochemical biosensors are addressed, and future trends are also highlighted.
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Affiliation(s)
- Abdellatif Ait Lahcen
- Sensors Lab, Advanced Membranes and Porous Materials Center (AMPMC), Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
| | - Sakandar Rauf
- Sensors Lab, Advanced Membranes and Porous Materials Center (AMPMC), Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tutku Beduk
- Sensors Lab, Advanced Membranes and Porous Materials Center (AMPMC), Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Ceren Durmus
- Department of Biochemistry, Faculty of Science, Ege University, 35100, Bornova, Izmir, Turkey
| | - Abdulrahman Aljedaibi
- Sensors Lab, Advanced Membranes and Porous Materials Center (AMPMC), Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Suna Timur
- Department of Biochemistry, Faculty of Science, Ege University, 35100, Bornova, Izmir, Turkey
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science & Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
| | - Aziz Amine
- Chemical Analysis and Biosensors Group, Laboratory of Process Engineering and Environment, Faculty of Science and Techniques, Hassan II University of Casablanca, B.P. 146. Mohammedia, Morocco.
| | - Otto S Wolfbeis
- Institute of Analytical Chemistry, Chemo- and Biosensors, University of Regensburg, D-93040, Regensburg, Germany.
| | - Khaled N Salama
- Sensors Lab, Advanced Membranes and Porous Materials Center (AMPMC), Computer, Electrical and Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
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9
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Fatheema J, Shahid T, Mohammad MA, Islam A, Malik F, Akinwande D, Rizwan S. A comprehensive investigation of MoO 3 based resistive random access memory. RSC Adv 2020; 10:19337-19345. [PMID: 35515462 PMCID: PMC9054044 DOI: 10.1039/d0ra03415k] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2020] [Accepted: 05/14/2020] [Indexed: 11/21/2022] Open
Abstract
The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics. For the trilayered structure, the SET voltage lies around 3.3 V and RESET voltage is observed to be in the −2.3 V to −2.7 V range. The conduction mechanism has been observed and revealed for the Metal–Insulator–Metal (MIM) structure which is a space-charge-limited current mechanism that follows both ohmic conduction and Child's law. Furthermore, a theoretical study has been performed by using density functional theory (DFT) to evaluate the resistance switching role of molybdenum oxide (MoO3). The structure has been studied with oxygen vacancy sites induced into the system which shows the reduction in bandgap, whereas an indirect bandgap of 1.9 eV and a direct bandgap of 3.1 eV are calculated for molybdenum oxide. Conclusively, the formation of a conduction filament which is fundamental for resistive switching has been explained through band structure and density of states per eV for oxygen vacancy structures of molybdenum oxide. The current work presents an in-depth understanding of the resistive switching mechanism involved in MoO3 based resistive random access memory devices for future data storage applications. The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics.![]()
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Affiliation(s)
- Jameela Fatheema
- Physics Characterization and Simulations Lab, Department of Physics, School of Natural Sciences (SNS), National University of Sciences and Technology (NUST) Islamabad 54000 Pakistan
| | - Tauseef Shahid
- CAS Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo 315201 China
| | - Mohammad Ali Mohammad
- School of Chemical and Materials Engineering, National University of Sciences & Technology (NUST) Islamabad 54000 Pakistan
| | - Amjad Islam
- College of Materials Engineering, Fujian Agriculture and Forestry University Fuzhou-350002 P. R. China
| | - Fouzia Malik
- Research Centre for Modelling and Simulations, National University of Sciences & Technology (NUST) Islamabad 54000 Pakistan
| | - Deji Akinwande
- Microelectronics Research Center, The University of Texas at Austin Austin Texas 78758 USA
| | - Syed Rizwan
- Physics Characterization and Simulations Lab, Department of Physics, School of Natural Sciences (SNS), National University of Sciences and Technology (NUST) Islamabad 54000 Pakistan
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10
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Qiao Y, Gou G, Wu F, Jian J, Li X, Hirtz T, Zhao Y, Zhi Y, Wang F, Tian H, Yang Y, Ren TL. Graphene-Based Thermoacoustic Sound Source. ACS NANO 2020; 14:3779-3804. [PMID: 32186849 DOI: 10.1021/acsnano.9b10020] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Thermoacoustic (TA) effect has been discovered for more than 130 years. However, limited by the material characteristics, the performance of a TA sound source could not be compared with magnetoelectric and piezoelectric loudspeakers. Recently, graphene, a two-dimensional material with the lowest heat capacity per unit area, was discovered to have a good TA performance. Compared with a traditional sound source, graphene TA sound sources (GTASSs) have many advantages, such as small volume, no diaphragm vibration, wide frequency range, high transparency, good flexibility, and high sound pressure level (SPL). Therefore, graphene has a great potential as a next-generation sound source. Photoacoustic (PA) imaging can also be applied to the diagnosis and treatment of diseases using the photothermo-acoustic (PTA) effect. Therefore, in this review, we will introduce the history of TA devices. Then, the theory and simulation model of TA will be analyzed in detail. After that, we will talk about the graphene synthesis method. To improve the performance of GTASSs, many strategies such as lowering the thickness and using porous or suspended structures will be introduced. With a good PTA effect and large specific area, graphene PA imaging and drug delivery is a promising prospect in cancer treatment. Finally, the challenges and prospects of GTASSs will be discussed.
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Affiliation(s)
- Yancong Qiao
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Guangyang Gou
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Jinming Jian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Xiaoshi Li
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Thomas Hirtz
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yunfei Zhao
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yao Zhi
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Fangwei Wang
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yi Yang
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
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11
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Zou T, Zhao B, Xin W, Wang Y, Wang B, Zheng X, Xie H, Zhang Z, Yang J, Guo C. High-speed femtosecond laser plasmonic lithography and reduction of graphene oxide for anisotropic photoresponse. LIGHT, SCIENCE & APPLICATIONS 2020; 9:69. [PMID: 32351693 PMCID: PMC7183510 DOI: 10.1038/s41377-020-0311-2] [Citation(s) in RCA: 48] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2019] [Revised: 04/01/2020] [Accepted: 04/07/2020] [Indexed: 05/11/2023]
Abstract
Micro/nanoprocessing of graphene surfaces has attracted significant interest for both science and applications due to its effective modulation of material properties, which, however, is usually restricted by the disadvantages of the current fabrication methods. Here, by exploiting cylindrical focusing of a femtosecond laser on graphene oxide (GO) films, we successfully produce uniform subwavelength grating structures at high speed along with a simultaneous in situ photoreduction process. Strikingly, the well-defined structures feature orientations parallel to the laser polarization and significant robustness against distinct perturbations. The proposed model and simulations reveal that the structure formation is based on the transverse electric (TE) surface plasmons triggered by the gradient reduction of the GO film from its surface to the interior, which eventually results in interference intensity fringes and spatially periodic interactions. Further experiments prove that such a regular structured surface can cause enhanced optical absorption (>20%) and an anisotropic photoresponse (~0.46 ratio) for the reduced GO film. Our work not only provides new insights into understanding the laser-GO interaction but also lays a solid foundation for practical usage of femtosecond laser plasmonic lithography, with the prospect of expansion to other two-dimensional materials for novel device applications.
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Affiliation(s)
- Tingting Zou
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Bo Zhao
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China
- Department of Electronic Information and Physics, Changzhi University, 046011 Changzhi, China
| | - Wei Xin
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China
| | - Ye Wang
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Bin Wang
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Xin Zheng
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Hongbo Xie
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, 100049 Beijing, China
| | - Zhiyu Zhang
- Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences (CAS), 130033 Changchun, China
| | - Jianjun Yang
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China
| | - Chunlei Guo
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China
- The Institute of Optics, University of Rochester, Rochester, NY 14627 USA
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12
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You R, Liu YQ, Hao YL, Han DD, Zhang YL, You Z. Laser Fabrication of Graphene-Based Flexible Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1901981. [PMID: 31441164 DOI: 10.1002/adma.201901981] [Citation(s) in RCA: 115] [Impact Index Per Article: 28.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2019] [Revised: 05/30/2019] [Indexed: 05/21/2023]
Abstract
Recent years have witnessed the rise of graphene and its applications in various electronic devices. Specifically, featuring excellent flexibility, transparency, conductivity, and mechanical robustness, graphene has emerged as a versatile material for flexible electronics. In the past decade, facilitated by various laser processing technologies, including the laser-treatment-induced photoreduction of graphene oxides, flexible patterning, hierarchical structuring, heteroatom doping, controllable thinning, etching, and shock of graphene, along with laser-induced graphene on polyimide, graphene has found broad applications in a wide range of electronic devices, such as power generators, supercapacitors, optoelectronic devices, sensors, and actuators. Here, the recent advancements in the laser fabrication of graphene-based flexible electronic devices are comprehensively summarized. The various laser fabrication technologies that have been employed for the preparation, processing, and modification of graphene and its derivatives are reviewed. A thorough overview of typical laser-enabled flexible electronic devices that are based on various graphene sources is presented. With the rapid progress that has been made in the research on graphene preparation methodologies and laser micronanofabrication technologies, graphene-based electronics may soon undergo fast development.
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Affiliation(s)
- Rui You
- Institute of Microelectronics, Peking University, Beijing, 100871, China
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Beijing, 100871, China
| | - Yu-Qing Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Yi-Long Hao
- Institute of Microelectronics, Peking University, Beijing, 100871, China
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Beijing, 100871, China
| | - Dong-Dong Han
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Yong-Lai Zhang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Zheng You
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
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13
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Wang DG, Liang Z, Gao S, Qu C, Zou R. Metal-organic framework-based materials for hybrid supercapacitor application. Coord Chem Rev 2020. [DOI: 10.1016/j.ccr.2019.213093] [Citation(s) in RCA: 147] [Impact Index Per Article: 36.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
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14
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Liu H, Liu XJ, Dong FY, Sun XZ. A direct-write method for preparing a bimetal sulfide/graphene composite as a free-standing electrode for high-performance microsupercapacitors. RSC Adv 2020; 10:35490-35498. [PMID: 35515652 PMCID: PMC9056894 DOI: 10.1039/d0ra06376b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2020] [Accepted: 09/05/2020] [Indexed: 11/26/2022] Open
Abstract
It is a great challenge to ideally integrate graphene with its unique two-dimensional (2D) and porous structure into the pseudocapacitive materials. In this paper, a simple technique, i.e. direct-laser-writing (DLW), was developed to fabricate microsupercapacitors (MSCs) with excellent electrochemical performance, marked as Ni–Co–S/laser induced graphene (LIG) that exhibit a high areal specific capacitance of 680 mF cm−2 at the current density of 1 mA cm−2. A symmetric MSC device was assembled using Ni–Co–S/LIG as a positive electrode and active carbon (AC) as the negative electrode, and exhibited a high areal energy density of 56.9 μW h cm−2 at the power density of 800 μW cm−2, and excellent cycling stability maintaining 89.6% of the areal specific capacitance after 8000 cycles. The synergistic effect of bimetallic Ni–Co–S and the LIG with the 2D structure results in the excellent electrochemical performance. This work demonstrates a method to integrate Ni–Co–S pseudocapacitive materials into porous graphene with a direct-laser-writing technique. The produced integrated materials possess high energy density that can be used in MSCs. This work demonstrates a method to integrate Ni–Co–S pseudocapacitive materials into the porous graphene producing from direct-laser-writing technique.![]()
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Affiliation(s)
- Hao Liu
- College of Chemistry and Pharmaceutical Sciences
- Qingdao Agricultural University
- Qingdao 266109
- China
| | - Xiao-Juan Liu
- College of Chemistry and Pharmaceutical Sciences
- Qingdao Agricultural University
- Qingdao 266109
- China
| | - Feng-Ying Dong
- College of Chemistry and Pharmaceutical Sciences
- Qingdao Agricultural University
- Qingdao 266109
- China
| | - Xin-Zhi Sun
- College of Chemistry and Pharmaceutical Sciences
- Qingdao Agricultural University
- Qingdao 266109
- China
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15
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Feng W, Li X, Lin S, Miao X, Wang W, Zhang Y. Enhancing the Efficiency of Graphene Oxide Reduction in Low-Power Digital Video Disc Drives by a Simple Precursor Heat Treatment. ACS APPLIED MATERIALS & INTERFACES 2019; 11:48162-48171. [PMID: 31777247 DOI: 10.1021/acsami.9b11469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Laser reduction of graphene oxide (GO) produces graphene effectively. As a low-power laser source, commercial digital video disc (DVD) drives provide a versatile platform to produce reduced graphene films in designed 2D patterns. However, research on how GO characteristics affect its laser reduction efficiency in DVD drives is rarely conducted. Here, we investigate how heating the GO dispersion affects the photoreduction process of GO films in a LightScribe DVD drive. Without noticeably changing the oxygen content, such mild heat treatment significantly improves GO's absorption in the visible region, resulting in significant enhancement on GO's laser reduction efficiency. We demonstrate that the laser reduction efficiency increases with the increasing treatment time. The enhanced reduction level greatly improves the performance of laser-scribed graphene electrodes in applications such as glucose sensors (with an optimal linear response range up to 2550 μM) and supercapacitors (with an optimal areal capacity of 1.37 mF cm-2 at the scan rate of 50 mV s-1). This proposed approach provides general insights into the production of laser-reduced graphene with low-power laser sources, for advanced device applications such as wearable electronics and flexible microelectronics.
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Affiliation(s)
- Wendou Feng
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter , Chinese Academy of Sciences , 155 Yangqiao Road West , Fuzhou , Fujian 350002 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Xin Li
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter , Chinese Academy of Sciences , 155 Yangqiao Road West , Fuzhou , Fujian 350002 , P. R. China
| | - Songyue Lin
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter , Chinese Academy of Sciences , 155 Yangqiao Road West , Fuzhou , Fujian 350002 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Xiaofei Miao
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter , Chinese Academy of Sciences , 155 Yangqiao Road West , Fuzhou , Fujian 350002 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Wei Wang
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter , Chinese Academy of Sciences , 155 Yangqiao Road West , Fuzhou , Fujian 350002 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Yining Zhang
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter , Chinese Academy of Sciences , 155 Yangqiao Road West , Fuzhou , Fujian 350002 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
- Dalian National Laboratory for Clean Energy , Chinese Academy of Sciences , Dalian 161000 , P. R. China
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16
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Yang L, Wei J, Ma Z, Song P, Ma J, Zhao Y, Huang Z, Zhang M, Yang F, Wang X. The Fabrication of Micro/Nano Structures by Laser Machining. NANOMATERIALS (BASEL, SWITZERLAND) 2019; 9:E1789. [PMID: 31888222 PMCID: PMC6956144 DOI: 10.3390/nano9121789] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/11/2019] [Revised: 12/08/2019] [Accepted: 12/12/2019] [Indexed: 11/16/2022]
Abstract
Micro/nano structures have unique optical, electrical, magnetic, and thermal properties. Studies on the preparation of micro/nano structures are of considerable research value and broad development prospects. Several micro/nano structure preparation techniques have already been developed, such as photolithography, electron beam lithography, focused ion beam techniques, nanoimprint techniques. However, the available geometries directly implemented by those means are limited to the 2D mode. Laser machining, a new technology for micro/nano structural preparation, has received great attention in recent years for its wide application to almost all types of materials through a scalable, one-step method, and its unique 3D processing capabilities, high manufacturing resolution and high designability. In addition, micro/nano structures prepared by laser machining have a wide range of applications in photonics, Surface plasma resonance, optoelectronics, biochemical sensing, micro/nanofluidics, photofluidics, biomedical, and associated fields. In this paper, updated achievements of laser-assisted fabrication of micro/nano structures are reviewed and summarized. It focuses on the researchers' findings, and analyzes materials, morphology, possible applications and laser machining of micro/nano structures in detail. Seven kinds of materials are generalized, including metal, organics or polymers, semiconductors, glass, oxides, carbon materials, and piezoelectric materials. In the end, further prospects to the future of laser machining are proposed.
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Affiliation(s)
- Liangliang Yang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.Y.); (J.W.); (Z.M.); (P.S.); (J.M.); (Y.Z.); (Z.H.); (M.Z.); (F.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiangtao Wei
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.Y.); (J.W.); (Z.M.); (P.S.); (J.M.); (Y.Z.); (Z.H.); (M.Z.); (F.Y.)
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Zhe Ma
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.Y.); (J.W.); (Z.M.); (P.S.); (J.M.); (Y.Z.); (Z.H.); (M.Z.); (F.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peishuai Song
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.Y.); (J.W.); (Z.M.); (P.S.); (J.M.); (Y.Z.); (Z.H.); (M.Z.); (F.Y.)
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jing Ma
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.Y.); (J.W.); (Z.M.); (P.S.); (J.M.); (Y.Z.); (Z.H.); (M.Z.); (F.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongqiang Zhao
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.Y.); (J.W.); (Z.M.); (P.S.); (J.M.); (Y.Z.); (Z.H.); (M.Z.); (F.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhen Huang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.Y.); (J.W.); (Z.M.); (P.S.); (J.M.); (Y.Z.); (Z.H.); (M.Z.); (F.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mingliang Zhang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.Y.); (J.W.); (Z.M.); (P.S.); (J.M.); (Y.Z.); (Z.H.); (M.Z.); (F.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fuhua Yang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.Y.); (J.W.); (Z.M.); (P.S.); (J.M.); (Y.Z.); (Z.H.); (M.Z.); (F.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China
| | - Xiaodong Wang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.Y.); (J.W.); (Z.M.); (P.S.); (J.M.); (Y.Z.); (Z.H.); (M.Z.); (F.Y.)
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100190, China
- Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China
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17
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Qiao Y, Li X, Hirtz T, Deng G, Wei Y, Li M, Ji S, Wu Q, Jian J, Wu F, Shen Y, Tian H, Yang Y, Ren TL. Graphene-based wearable sensors. NANOSCALE 2019; 11:18923-18945. [PMID: 31532436 DOI: 10.1039/c9nr05532k] [Citation(s) in RCA: 44] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The human body is a "delicate machine" full of sensors such as the fingers, nose, and mouth. In addition, numerous physiological signals are being created every moment, which can reflect the condition of the body. The quality and the quantity of the physiological signals are important for diagnoses and the execution of therapies. Due to the incompact interface between the sensors and the skin, the signals obtained by commercial rigid sensors do not bond well with the body; this decreases the quality of the signal. To increase the quantity of the data, it is important to detect physiological signals in real time during daily life. In recent years, there has been an obvious trend of applying graphene devices with excellent performance (flexibility, biocompatibility, and electronic characters) in wearable systems. In this review, we will first provide an introduction about the different methods of synthesis of graphene, and then techniques for graphene patterning will be outlined. Moreover, wearable graphene sensors to detect mechanical, electrophysiological, fluid, and gas signals will be introduced. Finally, the challenges and prospects of wearable graphene devices will be discussed. Wearable graphene sensors can improve the quality and quantity of the physiological signals and have great potential for health-care and telemedicine in the future.
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Affiliation(s)
- Yancong Qiao
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Xiaoshi Li
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Thomas Hirtz
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Ge Deng
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Yuhong Wei
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Mingrui Li
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Shourui Ji
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China. and School of Aerospace Engineering, Tsinghua University, Beijing 100084, China
| | - Qi Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Jinming Jian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Yang Shen
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Yi Yang
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China.
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18
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Wu Z, Zhao X, Yang Y, Wang W, Zhang X, Wang R, Cao R, Liu Q, Banerjee W. Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices. NANOSCALE ADVANCES 2019; 1:3753-3760. [PMID: 36133528 PMCID: PMC9418922 DOI: 10.1039/c9na00409b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2019] [Accepted: 08/05/2019] [Indexed: 05/13/2023]
Abstract
Resistive switching devices based on binary transition metal oxides have been widely investigated. However, these devices invariably manifest threshold switching characteristics when the active metal electrode is silver, the dielectric layer is hafnium oxide and platinum is used as the bottom electrode, and have a relatively low compliance current (<100 μA). Here we developed a way to transform an Ag-based hafnium oxide selector into quantum-contact originated memory with a low compliance current, in which a graphene interface barrier layer is inserted between the silver electrode and hafnium oxide layer. Devices with structure Ag/HfO x /Pt acts as a bipolar selector with a high selectivity of >108 and sub-threshold swing of ∼1 mV dec-1. After introducing a graphene interface barrier, high stress dependent (forming at +3 V) formation of localized conducting filaments embodies stable nonvolatile memory characteristics with low set/reset voltages (<±1.0 V), low reset power (6 μW) and multi-level potential. Grain boundaries of the graphene interface control the type of switching in the devices. A good barrier can switch the Ag-based volatile selector into Ag-based nonvolatile memory.
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Affiliation(s)
- Zuheng Wu
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- University of Chinese Academy of Sciences No. 19(A) Yuquan Road, Shijingshan District Beijing P.R.China 100049
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 P. R. China
| | - Xiaolong Zhao
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
| | - Yang Yang
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- University of Chinese Academy of Sciences No. 19(A) Yuquan Road, Shijingshan District Beijing P.R.China 100049
| | - Wei Wang
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
| | - Xumeng Zhang
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- University of Chinese Academy of Sciences No. 19(A) Yuquan Road, Shijingshan District Beijing P.R.China 100049
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 P. R. China
| | - Rui Wang
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- University of Chinese Academy of Sciences No. 19(A) Yuquan Road, Shijingshan District Beijing P.R.China 100049
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 P. R. China
| | - Rongrong Cao
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- University of Chinese Academy of Sciences No. 19(A) Yuquan Road, Shijingshan District Beijing P.R.China 100049
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 P. R. China
| | - Qi Liu
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 P. R. China
| | - Writam Banerjee
- Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences No. 3, BeiTuCheng West Road, ChaoYang District Beijing 100029 P. R. China
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 P. R. China
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH) Pohang 790-784 Republic of Korea
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19
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Jung JY, Woong Kim D, Kim DH, Joo Park T, Wehrspohn RB, Lee JH. Seebeck-voltage-triggered self-biased photoelectrochemical water splitting using HfO x/SiO x bi-layer protected Si photocathodes. Sci Rep 2019; 9:9132. [PMID: 31235765 PMCID: PMC6591395 DOI: 10.1038/s41598-019-45672-4] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2019] [Accepted: 06/12/2019] [Indexed: 11/16/2022] Open
Abstract
The use of a photoelectrochemical device is an efficient method of converting solar energy into hydrogen fuel via water splitting reactions. One of the best photoelectrode materials is Si, which absorbs a broad wavelength range of incident light and produces a high photocurrent level (~44 mA·cm-2). However, the maximum photovoltage that can be generated in single-junction Si devices (~0.75 V) is much lower than the voltage required for a water splitting reaction (>1.6 V). In addition, the Si surface is electrochemically oxidized or reduced when it comes into direct contact with the aqueous electrolyte. Here, we propose the hybridization of the photoelectrochemical device with a thermoelectric device, where the Seebeck voltage generated by the thermal energy triggers the self-biased water splitting reaction without compromising the photocurrent level at 42 mA cm-2. In this hybrid device p-Si, where the surface is protected by HfOx/SiOx bilayers, is used as a photocathode. The HfOx exhibits high corrosion resistance and protection ability, thereby ensuring stability. On applying the Seebeck voltage, the tunneling barrier of HfOx is placed at a negligible energy level in the electron transfer from Si to the electrolyte, showing charge transfer kinetics independent of the HfOx thickness. These findings serve as a proof-of-concept of the stable and high-efficiency production of hydrogen fuel by the photoelectrochemical-thermoelectric hybrid devices.
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Affiliation(s)
- Jin-Young Jung
- Department of Materials and Chemical Engineering, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, Kyeonggi-do, 15588, Republic of Korea
| | - Dae Woong Kim
- Department of Materials and Chemical Engineering, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, Kyeonggi-do, 15588, Republic of Korea
| | - Dong-Hyung Kim
- Department of Materials and Chemical Engineering, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, Kyeonggi-do, 15588, Republic of Korea
| | - Tae Joo Park
- Department of Materials and Chemical Engineering, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, Kyeonggi-do, 15588, Republic of Korea.
| | - Ralf B Wehrspohn
- Institute of Physics, Martin-Luther-Universität Halle-Wittenberg, Halle, Germany
- Fraunhofer Institute for Microstructure of Materials and Systems IMWS Walter-Hülse-Strasse 1, D06120, Halle, Germany
| | - Jung-Ho Lee
- Department of Materials and Chemical Engineering, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, Kyeonggi-do, 15588, Republic of Korea.
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20
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Ivanov AI, Nebogatikova NA, Kotin IA, Smagulova SA, Antonova IV. Resistive switching effects in fluorinated graphene films with graphene quantum dots enhanced by polyvinyl alcohol. NANOTECHNOLOGY 2019; 30:255701. [PMID: 30836347 DOI: 10.1088/1361-6528/ab0cb3] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-layer films of partially fluorinated graphene (PFG) with graphene quantum dots and polyvinyl alcohol (PVA) were prepared by means of 2D printing technology. A stable resistive switching effect with the ON/OFF current ratio amounting from one to 4-5 orders of magnitude is found. The decrease in the PVA thickness leads to a change of the unipolar threshold switchings to the bipolar resistive switchings. The crossbar Ag/PFG/PVA/Ag structures retain their performance up to 6.5% deformation. The switching phenomenon is observed for a period about a year. The traps with characteristic activation energies ∼0.05 eV are suggested to be responsible for resistive switching. The time of charge-carrier emission from the localized states was found to be ∼5 μs. A quality model to describe the resistive switching effect in two-layer films implying the conduction over quantum dots proceeding with the participation of active traps at the PFG/PVA interface is proposed. The structures with the design demonstrated threshold resistive switching have their high potential for development of selector devices integrated to sensor or memristors circuits, for information storage and data processing, for flexible and wearable electronics. The structures with lower PVA thickness and the bipolar threshold switching are perspective for non-volatile memory cells for printed and flexible electronics.
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Affiliation(s)
- Artem I Ivanov
- Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, 630090, Novosibirsk, Russia
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21
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Romero FJ, Toral-Lopez A, Ohata A, Morales DP, Ruiz FG, Godoy A, Rodriguez N. Laser-Fabricated Reduced Graphene Oxide Memristors. NANOMATERIALS 2019; 9:nano9060897. [PMID: 31248215 PMCID: PMC6630327 DOI: 10.3390/nano9060897] [Citation(s) in RCA: 35] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/08/2019] [Revised: 06/15/2019] [Accepted: 06/17/2019] [Indexed: 12/20/2022]
Abstract
Finding an inexpensive and scalable method for the mass production of memristors will be one of the key aspects for their implementation in end-user computing applications. Herein, we report pioneering research on the fabrication of laser-lithographed graphene oxide memristors. The devices have been surface-fabricated through a graphene oxide coating on a polyethylene terephthalate substrate followed by a localized laser-assisted photo-thermal partial reduction. When the laser fluence is appropriately tuned during the fabrication process, the devices present a characteristic pinched closed-loop in the current-voltage relation revealing the unique fingerprint of the memristive hysteresis. Combined structural and electrical experiments have been conducted to characterize the raw material and the devices that aim to establish a path for optimization. Electrical measurements have demonstrated a clear distinction between the resistive states, as well as stable memory performance, indicating the potential of laser-fabricated graphene oxide memristors in resistive switching applications.
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Affiliation(s)
- Francisco J Romero
- Pervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain.
- Department of Electronics and Computer Technology & Center of Research in Telecommunications and Information Technologies, University of Granada, 18071 Granada, Spain.
| | - Alejandro Toral-Lopez
- Pervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain.
- Department of Electronics and Computer Technology & Center of Research in Telecommunications and Information Technologies, University of Granada, 18071 Granada, Spain.
| | - Akiko Ohata
- Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Kanagawa 252-5210, Japan.
| | - Diego P Morales
- Department of Electronics and Computer Technology & Center of Research in Telecommunications and Information Technologies, University of Granada, 18071 Granada, Spain.
- Biochemistry and Electronics as Sensing Technologies Group, University of Granada, 18071 Granada, Spain.
| | - Francisco G Ruiz
- Pervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain.
- Department of Electronics and Computer Technology & Center of Research in Telecommunications and Information Technologies, University of Granada, 18071 Granada, Spain.
| | - Andres Godoy
- Pervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain.
- Department of Electronics and Computer Technology & Center of Research in Telecommunications and Information Technologies, University of Granada, 18071 Granada, Spain.
| | - Noel Rodriguez
- Pervasive Electronics Advanced Research Laboratory, University of Granada, 18071 Granada, Spain.
- Department of Electronics and Computer Technology & Center of Research in Telecommunications and Information Technologies, University of Granada, 18071 Granada, Spain.
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22
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Zhang Y, Zhu H, Sun P, Sun C, Huang H, Guan S, Liu H, Zhang H, Zhang C, Qin K. Laser‐induced Graphene‐based Non‐enzymatic Sensor for Detection of Hydrogen Peroxide. ELECTROANAL 2019. [DOI: 10.1002/elan.201900043] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Affiliation(s)
- Yuhan Zhang
- Research & Educational Center for the Control Engineering of Translational Precision Medicine (R-ECCE-TPM), School of Biomedical Engineering, Faculty of Electronic Information and Electrical EngineeringDalian University of Technology Dalian 116024 China
| | - Huichao Zhu
- Research & Educational Center for the Control Engineering of Translational Precision Medicine (R-ECCE-TPM), School of Biomedical Engineering, Faculty of Electronic Information and Electrical EngineeringDalian University of Technology Dalian 116024 China
| | - Pin Sun
- Department of Neurosurgery, Huashan HospitalFudan University Shanghai China
- Shanghai Medical CollegeFudan University Shanghai China
| | - Chang‐Kai Sun
- Research & Educational Center for the Control Engineering of Translational Precision Medicine (R-ECCE-TPM), School of Biomedical Engineering, Faculty of Electronic Information and Electrical EngineeringDalian University of Technology Dalian 116024 China
- State Key Laboratory of Fine Chemicals, Dalian R&D Center for Stem Cell and Tissue EngineeringDalian University of Technology Dalian 116024 China
- Liaoning Provincial Key Laboratory of Cerebral Diseases, Institute for Brain DisordersDalian Medical University Dalian 116044 China
| | - Hui Huang
- Research & Educational Center for the Control Engineering of Translational Precision Medicine (R-ECCE-TPM), School of Biomedical Engineering, Faculty of Electronic Information and Electrical EngineeringDalian University of Technology Dalian 116024 China
| | - Shui Guan
- State Key Laboratory of Fine Chemicals, Dalian R&D Center for Stem Cell and Tissue EngineeringDalian University of Technology Dalian 116024 China
| | - Hailong Liu
- Research & Educational Center for the Control Engineering of Translational Precision Medicine (R-ECCE-TPM), School of Biomedical Engineering, Faculty of Electronic Information and Electrical EngineeringDalian University of Technology Dalian 116024 China
| | - Hangyu Zhang
- Research & Educational Center for the Control Engineering of Translational Precision Medicine (R-ECCE-TPM), School of Biomedical Engineering, Faculty of Electronic Information and Electrical EngineeringDalian University of Technology Dalian 116024 China
| | - Chi Zhang
- Research & Educational Center for the Control Engineering of Translational Precision Medicine (R-ECCE-TPM), School of Biomedical Engineering, Faculty of Electronic Information and Electrical EngineeringDalian University of Technology Dalian 116024 China
| | - Kai‐Rong Qin
- Research & Educational Center for the Control Engineering of Translational Precision Medicine (R-ECCE-TPM), School of Biomedical Engineering, Faculty of Electronic Information and Electrical EngineeringDalian University of Technology Dalian 116024 China
- School of Optoelectronic Engineering and Instrumentation ScienceDalian University of Technology Dalian 116024 China
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23
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Xu W, Yang T, Qin F, Gong D, Du Y, Dai G. A Sprayed Graphene Pattern-Based Flexible Strain Sensor with High Sensitivity and Fast Response. SENSORS 2019; 19:s19051077. [PMID: 30832402 PMCID: PMC6427754 DOI: 10.3390/s19051077] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2018] [Revised: 02/14/2019] [Accepted: 02/26/2019] [Indexed: 12/19/2022]
Abstract
Flexible strain sensors have a wide range of applications in biomedical science, aerospace industry, portable devices, precise manufacturing, etc. However, the manufacturing processes of most flexible strain sensors previously reported have usually required high manufacturing costs and harsh experimental conditions. Besides, research interests are often focused on improving a single attribute parameter while ignoring others. This work aims to propose a simple method of manufacturing flexible graphene-based strain sensors with high sensitivity and fast response. Firstly, oxygen plasma treats the substrate to improve the interfacial interaction between graphene and the substrate, thereby improving device performance. The graphene solution is then sprayed using a soft PET mask to define a pattern for making the sensitive layer. This flexible strain sensor exhibits high sensitivity (gauge factor ~100 at 1% strain), fast response (response time: 400–700 μs), good stability (1000 cycles), and low overshoot (<5%) as well. Those processes used are compatible with a variety of complexly curved substrates and is expected to broaden the application of flexible strain sensors.
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Affiliation(s)
- Wei Xu
- Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China.
- Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
| | - Tingting Yang
- Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China.
- Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
| | - Feng Qin
- Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China.
- Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
| | - Dongdong Gong
- Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China.
- Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
| | - Yijia Du
- Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China.
- Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
| | - Gang Dai
- Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621900, China.
- Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
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24
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Alam MS, Boby MA, Chowdhury FA, Albrithen H, Hossain MA. Influence of composition on the external quantum efficiency of reduced graphene oxide/carbon nanoparticle based photodetector used for human body IR detection. RSC Adv 2019; 9:18996-19005. [PMID: 35516900 PMCID: PMC9064949 DOI: 10.1039/c9ra01894h] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2019] [Accepted: 05/27/2019] [Indexed: 01/22/2023] Open
Abstract
Here, we developed an efficient infrared (IR) detector comprising reduced graphene oxide (RGO) and carbon nanoparticles (CNPs) for detecting human body IR radiation under ambient conditions. The RGO/CNP nanocomposite thin-film based photodetectors were assembled via a simple solution-phase cost-effective route with different concentrations of RGO solution while keeping CNP concentration constant. Three RGO/CNP nanocomposite photodetector devices were fabricated with three different concentrations of RGO (keeping CNP concentration constant) and their photoresponse properties have been studied. The devices showed a sharp response to IR radiation emitted by the human body at room temperature having a wavelength of nearly 780 nm. I–V characteristics, radiation current responsivity, and time response curves as well as their external quantum efficiencies have been studied and explained. We measured two important parameters, namely, IR responsivity (Rλ) and external quantum efficiency (EQE) of RGO/CNP based IR detector devices. Our annotations show that Rλ and EQE increase with increasing concentration of GO in RGO/CNP nanocomposites as expected. This simple and inexpensive approach based on the integration of RGO and CNP could also be useful for the design of other potential optoelectronic devices such as photosensors for use in auto-doors to permit the entrance of human bodies only and in spaceships or robots to identify the existence of humans on Mars and the Moon. We report an efficient infrared (IR) detector comprising reduced graphene oxide (RGO) and carbon nanoparticles (CNPs) for detecting human body IR radiation under ambient conditions.![]()
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Affiliation(s)
- Mohammad Sahabul Alam
- Department of Chemical Engineering
- King Abdullah Institute for Nanotechnology
- King Saud University
- Riyadh 11451
- Kingdom of Saudi Arabia
| | | | | | - Hamad Albrithen
- Physics and Astronomy Department
- Research Chair for Tribology, Surface and Interface Sciences
- College of Science
- King Abdullah Institute for Nanotechnology
- Aramco Laboratory for Applied Sensing Research
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25
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Zhang Q, Yu H, Barbiero M, Wang B, Gu M. Artificial neural networks enabled by nanophotonics. LIGHT, SCIENCE & APPLICATIONS 2019; 8:42. [PMID: 31098012 PMCID: PMC6504946 DOI: 10.1038/s41377-019-0151-0] [Citation(s) in RCA: 58] [Impact Index Per Article: 11.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2018] [Revised: 03/07/2019] [Accepted: 03/26/2019] [Indexed: 05/05/2023]
Abstract
The growing demands of brain science and artificial intelligence create an urgent need for the development of artificial neural networks (ANNs) that can mimic the structural, functional and biological features of human neural networks. Nanophotonics, which is the study of the behaviour of light and the light-matter interaction at the nanometre scale, has unveiled new phenomena and led to new applications beyond the diffraction limit of light. These emerging nanophotonic devices have enabled scientists to develop paradigm shifts of research into ANNs. In the present review, we summarise the recent progress in nanophotonics for emulating the structural, functional and biological features of ANNs, directly or indirectly.
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Affiliation(s)
- Qiming Zhang
- Laboratory of Artificial-Intelligence Nanophotonics, School of Science, RMIT University, Melbourne, VIC 3001 Australia
| | - Haoyi Yu
- Laboratory of Artificial-Intelligence Nanophotonics, School of Science, RMIT University, Melbourne, VIC 3001 Australia
| | - Martina Barbiero
- Laboratory of Artificial-Intelligence Nanophotonics, School of Science, RMIT University, Melbourne, VIC 3001 Australia
| | - Baokai Wang
- Laboratory of Artificial-Intelligence Nanophotonics, School of Science, RMIT University, Melbourne, VIC 3001 Australia
| | - Min Gu
- Laboratory of Artificial-Intelligence Nanophotonics, School of Science, RMIT University, Melbourne, VIC 3001 Australia
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26
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Lu JY, Zhang XX, Zhu QY, Zhang FR, Huang WT, Ding XZ, Xia LQ, Luo HQ, Li NB. Highly Tunable and Scalable Fabrication of 3D Flexible Graphene Micropatterns for Directing Cell Alignment. ACS APPLIED MATERIALS & INTERFACES 2018; 10:17704-17713. [PMID: 29701460 DOI: 10.1021/acsami.8b04416] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Patterning graphene allows to precisely tune its properties to manufacture flexible functional materials or miniaturized devices for electronic and biomedical applications. However, conventional lithographic techniques are cumbersome for scalable production of time- and cost-effective graphene patterns, thus greatly impeding their practical applications. Here, we present a simple scalable fabrication of wafer-scale three-dimensional (3D) graphene micropatterns by direct laser tuning graphene oxide reduction and expansion using a LightScribe DVD writer. This one-step laser-scribing process can produce custom-made 3D graphene patterns on the surface of a disk with dimensions ranging from microscale up to decimeter scale in about 20 min. Through control over laser-scribing parameters, the resulting various 3D graphene patterns are exploited as scaffolds for controlling cell alignment. The 3D graphene patterns demonstrate their potential to biomedical applications, beyond the fields of electronics and photonics, which will allow to incorporate flexible graphene patterns for 3D cell or tissue culture to promote tissue engineering and drug testing applications.
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Affiliation(s)
- Jiao Yang Lu
- State Key Laboratory of Developmental Biology of Freshwater Fish, College of Life Science , Hunan Normal University , Changsha 410081 , P. R. China
| | - Xin Xing Zhang
- State Key Laboratory of Developmental Biology of Freshwater Fish, College of Life Science , Hunan Normal University , Changsha 410081 , P. R. China
| | - Qiu Yan Zhu
- State Key Laboratory of Developmental Biology of Freshwater Fish, College of Life Science , Hunan Normal University , Changsha 410081 , P. R. China
| | - Fu Rui Zhang
- State Key Laboratory of Developmental Biology of Freshwater Fish, College of Life Science , Hunan Normal University , Changsha 410081 , P. R. China
| | - Wei Tao Huang
- State Key Laboratory of Developmental Biology of Freshwater Fish, College of Life Science , Hunan Normal University , Changsha 410081 , P. R. China
| | - Xue Zhi Ding
- State Key Laboratory of Developmental Biology of Freshwater Fish, College of Life Science , Hunan Normal University , Changsha 410081 , P. R. China
| | - Li Qiu Xia
- State Key Laboratory of Developmental Biology of Freshwater Fish, College of Life Science , Hunan Normal University , Changsha 410081 , P. R. China
| | - Hong Qun Luo
- Key Laboratory of Eco-environments in Three Gorges Reservoir Region (Ministry of Education), School of Chemistry and Chemical Engineering , Southwest University , Chongqing 400715 , P. R. China
| | - Nian Bing Li
- Key Laboratory of Eco-environments in Three Gorges Reservoir Region (Ministry of Education), School of Chemistry and Chemical Engineering , Southwest University , Chongqing 400715 , P. R. China
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27
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Yang Z, Wang DY, Pang Y, Li YX, Wang Q, Zhang TY, Wang JB, Liu X, Yang YY, Jian JM, Jian MQ, Zhang YY, Yang Y, Ren TL. Simultaneously Detecting Subtle and Intensive Human Motions Based on a Silver Nanoparticles Bridged Graphene Strain Sensor. ACS APPLIED MATERIALS & INTERFACES 2018; 10:3948-3954. [PMID: 29281246 DOI: 10.1021/acsami.7b16284] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
There is a growing demand for flexible electronic devices. In particular, strain sensors with high performance have attracted more and more attention, because they can be attached on clothing or human skin for applications in the real-time monitoring of human activities. However, monitoring human-body motions that include both subtle and intensive motions, and many strain sensors cannot meet the diverse demands simultaneously. In this work, a silver nanoparticles (Ag NPs) bridged graphene strain sensor is developed for simultaneously detecting subtle and intensive human motions. Ag NPs serve as many bridges to connect the self-overlapping graphene sheets, which endows the strain sensor with many excellent performances. Because of the high sensitivity, with a large gauge factor (GF) of 475 and a strain range of >14.5%, high durability of the sensor has been achieved. Besides, the excellent consistency and repeatability of the fabrication process is verified. Furthermore, the model for explaining the working mechanism of the strain sensor is proposed. Most importantly, the designed wearable strain sensor can be applied in human motion detection, including large-scale motions and small-scale motions.
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Affiliation(s)
- Zhen Yang
- Institute of Microelectronics, Tsinghua University , Beijing 100084, China
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Dan-Yang Wang
- Institute of Microelectronics, Tsinghua University , Beijing 100084, China
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Yu Pang
- Institute of Microelectronics, Tsinghua University , Beijing 100084, China
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Yu-Xing Li
- Institute of Microelectronics, Tsinghua University , Beijing 100084, China
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Qian Wang
- Institute of Microelectronics, Tsinghua University , Beijing 100084, China
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Tian-Yu Zhang
- Institute of Microelectronics, Tsinghua University , Beijing 100084, China
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Jia-Bin Wang
- Institute of Microelectronics, Tsinghua University , Beijing 100084, China
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Xiao Liu
- Institute of Microelectronics, Tsinghua University , Beijing 100084, China
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Yi-Yan Yang
- Institute of Microelectronics, Tsinghua University , Beijing 100084, China
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Jin-Ming Jian
- Institute of Microelectronics, Tsinghua University , Beijing 100084, China
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Mu-Qiang Jian
- Department of Chemistry and Center for Nano and Micro Mechanics (CNMM), Tsinghua University , Beijing 100084, China
| | - Ying-Ying Zhang
- Department of Chemistry and Center for Nano and Micro Mechanics (CNMM), Tsinghua University , Beijing 100084, China
| | - Yi Yang
- Institute of Microelectronics, Tsinghua University , Beijing 100084, China
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics, Tsinghua University , Beijing 100084, China
- Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
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28
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Tian H, Zhao L, Wang X, Yeh YW, Yao N, Rand BP, Ren TL. Extremely Low Operating Current Resistive Memory Based on Exfoliated 2D Perovskite Single Crystals for Neuromorphic Computing. ACS NANO 2017; 11:12247-12256. [PMID: 29200259 DOI: 10.1021/acsnano.7b05726] [Citation(s) in RCA: 94] [Impact Index Per Article: 13.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Extremely low energy consumption neuromorphic computing is required to achieve massively parallel information processing on par with the human brain. To achieve this goal, resistive memories based on materials with ionic transport and extremely low operating current are required. Extremely low operating current allows for low power operation by minimizing the program, erase, and read currents. However, materials currently used in resistive memories, such as defective HfOx, AlOx, TaOx, etc., cannot suppress electronic transport (i.e., leakage current) while allowing good ionic transport. Here, we show that 2D Ruddlesden-Popper phase hybrid lead bromide perovskite single crystals are promising materials for low operating current nanodevice applications because of their mixed electronic and ionic transport and ease of fabrication. Ionic transport in the exfoliated 2D perovskite layer is evident via the migration of bromide ions. Filaments with a diameter of approximately 20 nm are visualized, and resistive memories with extremely low program current down to 10 pA are achieved, a value at least 1 order of magnitude lower than conventional materials. The ionic migration and diffusion as an artificial synapse is realized in the 2D layered perovskites at the pA level, which can enable extremely low energy neuromorphic computing.
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Affiliation(s)
- He Tian
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Lianfeng Zhao
- Department of Electrical Engineering, Princeton University , Princeton, New Jersey 08544, United States
| | - Xuefeng Wang
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
| | - Yao-Wen Yeh
- Princeton Institute for Science and Technology of Materials, Princeton University , Princeton, New Jersey 08544, United States
| | - Nan Yao
- Princeton Institute for Science and Technology of Materials, Princeton University , Princeton, New Jersey 08544, United States
| | - Barry P Rand
- Department of Electrical Engineering, Princeton University , Princeton, New Jersey 08544, United States
- Andlinger Center for Energy and the Environment, Princeton University , Princeton, New Jersey 08544, United States
| | - Tian-Ling Ren
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University , Beijing 100084, China
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29
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Kumar R, Singh RK, Singh DP, Joanni E, Yadav RM, Moshkalev SA. Laser-assisted synthesis, reduction and micro-patterning of graphene: Recent progress and applications. Coord Chem Rev 2017. [DOI: 10.1016/j.ccr.2017.03.021] [Citation(s) in RCA: 149] [Impact Index Per Article: 21.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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30
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Tao LQ, Wang DY, Tian H, Ju ZY, Liu Y, Pang Y, Chen YQ, Yang Y, Ren TL. Self-adapted and tunable graphene strain sensors for detecting both subtle and large human motions. NANOSCALE 2017; 9:8266-8273. [PMID: 28585963 DOI: 10.1039/c7nr01862b] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Conventional strain sensors rarely have both a high gauge factor and a large strain range simultaneously, so they can only be used in specific situations where only a high sensitivity or a large strain range is required. However, for detecting human motions that include both subtle and large motions, these strain sensors can't meet the diverse demands simultaneously. Here, we come up with laser patterned graphene strain sensors with self-adapted and tunable performance for the first time. A series of strain sensors with either an ultrahigh gauge factor or a preferable strain range can be fabricated simultaneously via one-step laser patterning, and are suitable for detecting all human motions. The strain sensors have a GF of up to 457 with a strain range of 35%, or have a strain range of up to 100% with a GF of 268. Most importantly, the performance of the strain sensors can be easily tuned by adjusting the patterns of the graphene, so that the sensors can meet diverse demands in both subtle and large motion situations. The graphene strain sensors show significant potential in applications such as wearable electronics, health monitoring and intelligent robots. Furthermore, the facile, fast and low-cost fabrication method will make them possible and practical to be used for commercial applications in the future.
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Affiliation(s)
- Lu-Qi Tao
- Institute of Microelectronics, Tsinghua University, Beijing 10084, China
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Tao LQ, Tian H, Liu Y, Ju ZY, Pang Y, Chen YQ, Wang DY, Tian XG, Yan JC, Deng NQ, Yang Y, Ren TL. An intelligent artificial throat with sound-sensing ability based on laser induced graphene. Nat Commun 2017; 8:14579. [PMID: 28232739 PMCID: PMC5333117 DOI: 10.1038/ncomms14579] [Citation(s) in RCA: 190] [Impact Index Per Article: 27.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/26/2016] [Accepted: 01/13/2017] [Indexed: 12/24/2022] Open
Abstract
Traditional sound sources and sound detectors are usually independent and discrete in the human hearing range. To minimize the device size and integrate it with wearable electronics, there is an urgent requirement of realizing the functional integration of generating and detecting sound in a single device. Here we show an intelligent laser-induced graphene artificial throat, which can not only generate sound but also detect sound in a single device. More importantly, the intelligent artificial throat will significantly assist for the disabled, because the simple throat vibrations such as hum, cough and scream with different intensity or frequency from a mute person can be detected and converted into controllable sounds. Furthermore, the laser-induced graphene artificial throat has the advantage of one-step fabrication, high efficiency, excellent flexibility and low cost, and it will open practical applications in voice control, wearable electronics and many other areas. The functional integration of sound generation and detection on a single device is required to assist mute people. Here, the authors demonstrate a graphene-based artificial throat capable of detecting and converting diverse throat vibrations into meaningful sound within a single device.
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Affiliation(s)
- Lu-Qi Tao
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - He Tian
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China.,Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA
| | - Ying Liu
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Zhen-Yi Ju
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Yu Pang
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Yuan-Quan Chen
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Dan-Yang Wang
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Xiang-Guang Tian
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Jun-Chao Yan
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Ning-Qin Deng
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Yi Yang
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
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32
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Wang DY, Tao LQ, Liu Y, Zhang TY, Pang Y, Wang Q, Jiang S, Yang Y, Ren TL. High performance flexible strain sensor based on self-locked overlapping graphene sheets. NANOSCALE 2016; 8:20090-20095. [PMID: 27896345 DOI: 10.1039/c6nr07620c] [Citation(s) in RCA: 41] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Strain sensors have been widely used in the fields of wearable devices, robot arms, medical sensing, bio-sensing, artificial skin and so on, but the existing strain sensors have some shortcomings such as a limited gauge factor (GF) or strain range. We fabricate a novel and flexible strain sensor with high performance based on self-locked overlapping graphene sheets (SOGS) which can be used for wearable devices. Polydimethylsiloxane (PDMS) is used to lock the overlapping graphene sheets, and then the graphene can be stretched and achieve an ultrahigh GF. In addition, a new theory is put forward to explain the GF changes with strain range for the SOGS strain sensor. In this work, graphene oxide (GO) film is reduced to reduced GO (rGO) by a laser. Then, the SOGS and electrodes are encapsulated by PDMS. The SOGS strain sensor has a high GF up to 400 and strain range over 7.5%, and this SOGS strain sensor achieves a balance between high sensitivity and large strain range compared with other existing strain sensors. Furthermore the theoretical equation based on the new theory agrees well with the experimental results. And this strain sensor can be used in many applications because of its high sensitivity. Some applications of the SOGS strain sensors are demonstrated for the detection of various human motions and human sounds. The SOGS strain sensor can exhibit great potential in wearable electronics because of its good balance between high sensitivity and large strain.
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Affiliation(s)
- Dan-Yang Wang
- Institute of Microelectronics, Tsinghua University, Beijing, China. and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, China
| | - Lu-Qi Tao
- Institute of Microelectronics, Tsinghua University, Beijing, China. and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, China
| | - Ying Liu
- Institute of Microelectronics, Tsinghua University, Beijing, China. and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, China
| | - Tian-Yu Zhang
- Institute of Microelectronics, Tsinghua University, Beijing, China. and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, China
| | - Yu Pang
- Institute of Microelectronics, Tsinghua University, Beijing, China. and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, China
| | - Qian Wang
- Institute of Microelectronics, Tsinghua University, Beijing, China. and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, China
| | - Song Jiang
- Institute of Microelectronics, Tsinghua University, Beijing, China. and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, China
| | - Yi Yang
- Institute of Microelectronics, Tsinghua University, Beijing, China. and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, China
| | - Tian-Ling Ren
- Institute of Microelectronics, Tsinghua University, Beijing, China. and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, China
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Ji Y, Yang Y, Lee SK, Ruan G, Kim TW, Fei H, Lee SH, Kim DY, Yoon J, Tour JM. Flexible Nanoporous WO3-x Nonvolatile Memory Device. ACS NANO 2016; 10:7598-7603. [PMID: 27482761 DOI: 10.1021/acsnano.6b02711] [Citation(s) in RCA: 40] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3-x RRAM device showed bipolar switching characteristics and a high ION/IOFF ratio of ∼10(5). The device also showed stable retention time over 5 × 10(5) s, outstanding cell-to-cell uniformity, and bending endurance over 10(3) cycles when measured in both the flat and the maximum bending conditions.
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Affiliation(s)
| | | | | | | | - Tae-Wook Kim
- Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology , Joellabuk-do 565-905, Republic of Korea
| | | | - Seung-Hoon Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology , Gwangju 500-712, Republic of Korea
| | - Dong-Yu Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology , Gwangju 500-712, Republic of Korea
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A Flexible 360-Degree Thermal Sound Source Based on Laser Induced Graphene. NANOMATERIALS 2016; 6:nano6060112. [PMID: 28335239 PMCID: PMC5302618 DOI: 10.3390/nano6060112] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/26/2016] [Revised: 05/16/2016] [Accepted: 05/30/2016] [Indexed: 12/02/2022]
Abstract
A flexible sound source is essential in a whole flexible system. It’s hard to integrate a conventional sound source based on a piezoelectric part into a whole flexible system. Moreover, the sound pressure from the back side of a sound source is usually weaker than that from the front side. With the help of direct laser writing (DLW) technology, the fabrication of a flexible 360-degree thermal sound source becomes possible. A 650-nm low-power laser was used to reduce the graphene oxide (GO). The stripped laser induced graphene thermal sound source was then attached to the surface of a cylindrical bottle so that it could emit sound in a 360-degree direction. The sound pressure level and directivity of the sound source were tested, and the results were in good agreement with the theoretical results. Because of its 360-degree sound field, high flexibility, high efficiency, low cost, and good reliability, the 360-degree thermal acoustic sound source will be widely applied in consumer electronics, multi-media systems, and ultrasonic detection and imaging.
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35
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Avella-Oliver M, Morais S, Puchades R, Maquieira Á. Towards photochromic and thermochromic biosensing. Trends Analyt Chem 2016. [DOI: 10.1016/j.trac.2015.11.021] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
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36
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Raeis-Hosseini N, Lee JS. Controlling the Resistive Switching Behavior in Starch-Based Flexible Biomemristors. ACS APPLIED MATERIALS & INTERFACES 2016; 8:7326-32. [PMID: 26919221 DOI: 10.1021/acsami.6b01559] [Citation(s) in RCA: 43] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Implementation of biocompatible materials in resistive switching memory (ReRAM) devices provides opportunities to use them in biomedical applications. We demonstrate a robust, nonvolatile, flexible, and transparent ReRAM based on potato starch. We also introduce a biomolecular memory device that has a starch-chitosan composite layer. The ReRAM behavior can be controlled by mixing starch with chitosan in the resistive switching layer. Whereas starch-based biomemory devices which show abrupt changes in current level; the memory device with mixed biopolymers undergoes gradual changes. Both devices exhibit uniform and robust programmable memory properties for nonvolatile memory applications. The explicated source of the bipolar resistive switching behavior is assigned to formation and rupture of carbon-rich filaments. The gradual set/reset behavior in the memory device based on a starch-chitosan mixture makes it suitable for use in neuromorphic devices.
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Affiliation(s)
- Niloufar Raeis-Hosseini
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, South Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, South Korea
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37
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Tian H, Zhao H, Wang XF, Xie QY, Chen HY, Mohammad MA, Li C, Mi WT, Bie Z, Yeh CH, Yang Y, Wong HSP, Chiu PW, Ren TL. In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:7767-7774. [PMID: 26500160 DOI: 10.1002/adma.201503125] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2015] [Revised: 09/09/2015] [Indexed: 06/05/2023]
Abstract
A resistive random access memory (RRAM) device with a tunable switching window is demonstrated for the first time. The SET voltage can be continuously tuned from 0.27 to 4.5 V by electrical gating from -10 to +35 V. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R and potentially increase the RRAM density.
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Affiliation(s)
- He Tian
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
| | - Haiming Zhao
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
| | - Xue-Feng Wang
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
| | - Qian-Yi Xie
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
| | - Hong-Yu Chen
- Department of Electrical Engineering and Stanford System X Alliance, Stanford University, Stanford, CA, 94305, USA
| | - Mohammad Ali Mohammad
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
| | - Cheng Li
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
| | - Wen-Tian Mi
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
| | - Zhi Bie
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
| | - Chao-Hui Yeh
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Yi Yang
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
| | - H-S Philip Wong
- Department of Electrical Engineering and Stanford System X Alliance, Stanford University, Stanford, CA, 94305, USA
| | - Po-Wen Chiu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu, 30013, Taiwan
| | - Tian-Ling Ren
- Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing, 100084, China
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38
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Tian H, Shu Y, Wang XF, Mohammad MA, Bie Z, Xie QY, Li C, Mi WT, Yang Y, Ren TL. A graphene-based resistive pressure sensor with record-high sensitivity in a wide pressure range. Sci Rep 2015; 5:8603. [PMID: 25721159 PMCID: PMC4342573 DOI: 10.1038/srep08603] [Citation(s) in RCA: 172] [Impact Index Per Article: 19.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/26/2014] [Accepted: 01/26/2015] [Indexed: 01/22/2023] Open
Abstract
Pressure sensors are a key component in electronic skin (e-skin) sensing systems. Most reported resistive pressure sensors have a high sensitivity at low pressures (<5 kPa) to enable ultra-sensitive detection. However, the sensitivity drops significantly at high pressures (>5 kPa), which is inadequate for practical applications. For example, actions like a gentle touch and object manipulation have pressures below 10 kPa, and 10–100 kPa, respectively. Maintaining a high sensitivity in a wide pressure range is in great demand. Here, a flexible, wide range and ultra-sensitive resistive pressure sensor with a foam-like structure based on laser-scribed graphene (LSG) is demonstrated. Benefitting from the large spacing between graphene layers and the unique v-shaped microstructure of the LSG, the sensitivity of the pressure sensor is as high as 0.96 kPa−1 in a wide pressure range (0 ~ 50 kPa). Considering both sensitivity and pressure sensing range, the pressure sensor developed in this work is the best among all reported pressure sensors to date. A model of the LSG pressure sensor is also established, which agrees well with the experimental results. This work indicates that laser scribed flexible graphene pressure sensors could be widely used for artificial e-skin, medical-sensing, bio-sensing and many other areas.
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Affiliation(s)
- He Tian
- 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Yi Shu
- 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Xue-Feng Wang
- 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Mohammad Ali Mohammad
- 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Zhi Bie
- 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Qian-Yi Xie
- 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Cheng Li
- 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Wen-Tian Mi
- 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Yi Yang
- 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
| | - Tian-Ling Ren
- 1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China [2] Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
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Peng Z, Lin J, Ye R, Samuel ELG, Tour JM. Flexible and stackable laser-induced graphene supercapacitors. ACS APPLIED MATERIALS & INTERFACES 2015; 7:3414-9. [PMID: 25584857 DOI: 10.1021/am509065d] [Citation(s) in RCA: 84] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
In this paper, we demonstrate that by simple laser induction, commercial polyimide films can be readily transformed into porous graphene for the fabrication of flexible, solid-state supercapacitors. Two different solid-state electrolyte supercapacitors are described, namely vertically stacked graphene supercapacitors and in-plane graphene microsupercapacitors, each with enhanced electrochemical performance, cyclability, and flexibility. Devices with a solid-state polymeric electrolyte exhibit areal capacitance of >9 mF/cm2 at a current density of 0.02 mA/cm2, more than twice that of conventional aqueous electrolytes. Moreover, laser induction on both sides of polyimide sheets enables the fabrication of vertically stacked supercapacitors to multiply its electrochemical performance while preserving device flexibility.
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Affiliation(s)
- Zhiwei Peng
- Department of Chemistry, ‡Smalley Institute for Nanoscale Science and Technology, and §Department of Materials Science and NanoEngineering, Rice University , 6100 Main Street, Houston, Texas 77005, United States
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40
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Tan C, Liu Z, Huang W, Zhang H. Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials. Chem Soc Rev 2015; 44:2615-28. [DOI: 10.1039/c4cs00399c] [Citation(s) in RCA: 275] [Impact Index Per Article: 30.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
This tutorial review summarizes the recent progress in the rational design and preparation of solution-processed ultrathin 2D nanomaterials for non-volatile resistive memory devices.
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Affiliation(s)
- Chaoliang Tan
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
- Singapore
| | - Zhengdong Liu
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
- Singapore
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)
| | - Wei Huang
- Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)
- Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
- Nanjing University of Posts & Telecommunications (NUPT)
- Nanjing 210023
- China
| | - Hua Zhang
- School of Materials Science and Engineering
- Nanyang Technological University
- Singapore 639798
- Singapore
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