Multiplexed free-standing nanowire transistor bioprobe for intracellular recording: a general fabrication strategy

Active Micro-Nano-Collaborative Bioelectronic Device for Advanced Electrophysiological Recording

The development of precise and sensitive electrophysiological recording platforms holds the utmost importance for research in the fields of cardiology and neuroscience. In recent years, active micro/nano-bioelectronic devices have undergone significant advancements, thereby facilitating the study of electrophysiology. The distinctive configuration and exceptional functionality of these active micro-nano-collaborative bioelectronic devices offer the potential for the recording of high-fidelity action potential signals on a large scale. In this paper, we review three-dimensional active nano-transistors and planar active micro-transistors in terms of their applications in electro-excitable cells, focusing on the evaluation of the effects of active micro/nano-bioelectronic devices on electrophysiological signals. Looking forward to the possibilities, challenges, and wide prospects of active micro-nano-devices, we expect to advance their progress to satisfy the demands of theoretical investigations and medical implementations within the domains of cardiology and neuroscience research.

In-Cell Nanoelectronics: Opening the Door to Intracellular Electrophysiology

Establishing a reliable electrophysiological recording platform is crucial for cardiology and neuroscience research. Noninvasive and label-free planar multitransistors and multielectrode arrays are conducive to perform the large-scale cellular electrical activity recordings, but the signal attenuation limits these extracellular devices to record subthreshold activities. In recent decade, in-cell nanoelectronics have been rapidly developed to open the door to intracellular electrophysiology. With the unique three-dimensional nanotopography and advanced penetration strategies, high-throughput and high-fidelity action potential like signal recordings is expected to be realized. This review summarizes in-cell nanoelectronics from versatile nano-biointerfaces, penetration strategies, active/passive nanodevices, systematically analyses the applications in electrogenic cells and especially evaluates the influence of nanodevices on the high-quality intracellular electrophysiological signals. Further, the opportunities, challenges and broad prospects of in-cell nanoelectronics are prospected, expecting to promote the development of in-cell electrophysiological platforms to meet the demand of theoretical investigation and clinical application.

Ab Initio Design, Shaping, and Assembly of Free-Standing Silicon Nanoprobes

Free-standing silicon nanoprobes (SiNPs) are critical tools for intracellular bioelectrical signal recording, while a scalable fabrication of these tiny SiNPs with ab initio geometry designs has not been possible. In this work, we demonstrate a novel growth shaping of slim Si nanowires (SiNWs) into SiNPs with sharp tips (curvature radii <300 nm), tunable angles of 30°, 60°, to 120° and even programmable triangle/circular shapes. A precise growth integration of orderly single, double, and quadruple SiNPs at prescribed locations enables convenient electrode connection, transferring and mounting these tiny tips onto movable arms to serve as long-protruding (over 4-20 μm) nanoprobes. Mechanical flexibility, resilience, and field-effect sensing functionality of the SiNPs were systematically testified in liquid nanodroplet and cell environments. This highly reliable and economic manufacturing of advanced SiNPs holds a strong potential to boost and open up the market implementations of a wide range of intracellular sensing, monitoring, and editing applications.

Nanotechnology: new opportunities for the development of patch-clamps

The patch-clamp technique is one of the best approaches to investigate neural excitability. Impressive improvements towards the automation of the patch-clamp technique have been made, but obvious limitations and hurdles still exist, such as parallelization, volume displacement in vivo, and long-term recording. Nanotechnologies have provided opportunities to overcome these hurdles by applying electrical devices on the nanoscale. Electrodes based on nanowires, nanotubes, and nanoscale field-effect transistors (FETs) are confirmed to be robust and less invasive tools for intracellular electrophysiological recording. Research on the interface between the nanoelectrode and cell membrane aims to reduce the seal conductance and further improve the recording quality. Many novel recording approaches advance the parallelization, and precision with reduced invasiveness, thus improving the overall intracellular recording system. The combination of nanotechnology and the present intracellular recording framework is a revolutionary and promising orientation, potentially becoming the next generation electrophysiological recording technique and replacing the conventional patch-clamp technique. Here, this paper reviews the recent advances in intracellular electrophysiological recording techniques using nanotechnology, focusing on the design of noninvasive and greatly parallelized recording systems based on nanoelectronics.

Encoding Active Device Elements at Nanowire Tips

Semiconductor nanowires and other one-dimensional materials are attractive for highly sensitive and spatially confined electrical and optical signal detection in biological and physical systems, although it has been difficult to localize active electronic or optoelectronic device function at one end of such one-dimensional structures. Here we report a new nanowire structure in which the material and dopant are modulated specifically at only one end of nanowires to encode an active two-terminal device element. We present a general bottom-up synthetic scheme for these tip-modulated nanowires and illustrate this with the synthesis of nanoscale p-n junctions. Electron microscopy imaging verifies the designed p-Si nanowire core with SiO2 insulating inner shell and n-Si outer shell with clean p-Si/n-Si tip junction. Electrical transport measurements with independent contacts to the p-Si core and n-Si shell exhibited a current rectification behavior through the tip and no detectable current through the SiO2 shell. Electrical measurements also exhibited an n-type response in conductance versus water-gate voltage with pulsed gate experiments yielding a temporal resolution of at least 0.1 ms and ∼90% device sensitivity localized to within 0.5 μm from the nanowire p-n tip. In addition, photocurrent experiments showed an open-circuit voltage of 0.75 V at illumination power of ∼28.1 μW, exhibited linear dependence of photocurrent with respect to incident illumination power with an estimated responsivity up to ∼0.22 A/W, and revealed localized photocurrent generation at the nanowire tip. The tip-modulated concept was further extended to a top-down/bottom-up hybrid approach that enabled large-scale production of vertical tip-modulated nanowires with a final synthetic yield of >75% with >4300 nanowires. Vertical tip-modulated nanowires were fabricated into >50 individually addressable nanowire device arrays showing diode-like current-voltage characteristics. These tip-modulated nanowire devices provide substantial opportunity in areas ranging from biological and chemical sensing to optoelectronic signal and nanoscale photodetection.

Shape-Controlled Deterministic Assembly of Nanowires

Large-scale, deterministic assembly of nanowires and nanotubes with rationally controlled geometries could expand the potential applications of one-dimensional nanomaterials in bottom-up integrated nanodevice arrays and circuits. Control of the positions of straight nanowires and nanotubes has been achieved using several assembly methods, although simultaneous control of position and geometry has not been realized. Here, we demonstrate a new concept combining simultaneous assembly and guided shaping to achieve large-scale, high-precision shape controlled deterministic assembly of nanowires. We lithographically pattern U-shaped trenches and then shear transfer nanowires to the patterned substrate wafers, where the trenches serve to define the positions and shapes of transferred nanowires. Studies using semicircular trenches defined by electron-beam lithography yielded U-shaped nanowires with radii of curvature defined by inner surface of the trenches. Wafer-scale deterministic assembly produced U-shaped nanowires for >430,000 sites with a yield of ∼90%. In addition, mechanistic studies and simulations demonstrate that shaping results in primarily elastic deformation of the nanowires and show clearly the diameter-dependent limits achievable for accessible forces. Last, this approach was used to assemble U-shaped three-dimensional nanowire field-effect transistor bioprobe arrays containing 200 individually addressable nanodevices. By combining the strengths of wafer-scale top-down fabrication with diverse and tunable properties of one-dimensional building blocks in novel structural configurations, shape-controlled deterministic nanowire assembly is expected to enable new applications in many areas including nanobioelectronics and nanophotonics.

Applications of zero-valent silicon nanostructures in biomedicine

Zero-valent, or elemental, silicon nanostructures exhibit a number of properties that render them attractive for applications in nanomedicine. These materials hold significant promise for improving existing diagnostic and therapeutic techniques. This review summarizes some of the essential aspects of the fabrication techniques used to generate these fascinating nanostructures, comparing their material properties and suitability for biomedical applications. We examine the literature in regards to toxicity, biocompatibility and biodistribution of silicon nanoparticles, nanowires and nanotubes, with an emphasis on surface modification and its influence on cell adhesion and endocytosis. In the final part of this review, our attention is focused on current applications of the fabricated silicon nanostructures in nanomedicine, specifically examining drug and gene delivery, bioimaging and biosensing.

Intrinsic twisting instability of kinked silicon nanowires for intracellular recording

External influence can actuate the intrinsic twisting vibration in the kinked silicon nanowire, in which the twisting amplitude is geometry dependent.