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Choi S, Moon T, Wang G, Yang JJ. Filament-free memristors for computing. NANO CONVERGENCE 2023; 10:58. [PMID: 38110639 PMCID: PMC10728429 DOI: 10.1186/s40580-023-00407-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2023] [Accepted: 12/06/2023] [Indexed: 12/20/2023]
Abstract
Memristors have attracted increasing attention due to their tremendous potential to accelerate data-centric computing systems. The dynamic reconfiguration of memristive devices in response to external electrical stimuli can provide highly desirable novel functionalities for computing applications when compared with conventional complementary-metal-oxide-semiconductor (CMOS)-based devices. Those most intensively studied and extensively reviewed memristors in the literature so far have been filamentary type memristors, which typically exhibit a relatively large variability from device to device and from switching cycle to cycle. On the other hand, filament-free switching memristors have shown a better uniformity and attractive dynamical properties, which can enable a variety of new computing paradigms but have rarely been reviewed. In this article, a wide range of filament-free switching memristors and their corresponding computing applications are reviewed. Various junction structures, switching properties, and switching principles of filament-free memristors are surveyed and discussed. Furthermore, we introduce recent advances in different computing schemes and their demonstrations based on non-filamentary memristors. This Review aims to present valuable insights and guidelines regarding the key computational primitives and implementations enabled by these filament-free switching memristors.
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Affiliation(s)
- Sanghyeon Choi
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA
| | - Taehwan Moon
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Integrative Energy Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea
| | - J Joshua Yang
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA.
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2
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Jaafar AH, Shao L, Dai P, Zhang T, Han Y, Beanland R, Kemp NT, Bartlett PN, Hector AL, Huang R. 3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing. NANOSCALE 2022; 14:17170-17181. [PMID: 36380717 DOI: 10.1039/d2nr05012a] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Memristors are emerging as promising candidates for practical application in reservoir computing systems that are capable of temporal information processing. Here, we experimentally implement a physical reservoir computing system using resistive memristors based on three-dimensional (3D)-structured mesoporous silica (mSiO2) thin films fabricated by a low cost, fast and vacuum-free sol-gel technique. The in situ learning capability and a classification accuracy of 100% on a standard machine learning dataset are experimentally demonstrated. The volatile (temporal) resistive switching in diffusive memristors arises from the formation and subsequent spontaneous rupture of conductive filaments via diffusion of Ag species within the 3D-structured nanopores of the mSiO2 thin film. Besides volatile switching, the devices also exhibit a bipolar non-volatile resistive switching behavior when the devices are operated at a higher compliance current level. The implementation of mSiO2 thin films opens the route to fabricate a simple and low cost dynamic memristor with a temporal information process functionality, which is essential for neuromorphic computing applications.
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Affiliation(s)
- Ayoub H Jaafar
- School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK.
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Li Shao
- School of Chemistry, University of Southampton, Southampton, SO17 1BJ, UK.
| | - Peng Dai
- School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK.
| | - Tongjun Zhang
- School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK.
| | - Yisong Han
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Richard Beanland
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | - Neil T Kemp
- School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
| | - Philip N Bartlett
- School of Chemistry, University of Southampton, Southampton, SO17 1BJ, UK.
| | - Andrew L Hector
- School of Chemistry, University of Southampton, Southampton, SO17 1BJ, UK.
| | - Ruomeng Huang
- School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK.
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Ma J, Wang S, Wan X, Ma D, Xiao Y, Hao Q, Yang N. The unrevealed 3D morphological evolution of annealed nanoporous thin films. NANOSCALE 2022; 14:17072-17079. [PMID: 36373437 DOI: 10.1039/d2nr04014j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Nanoporous materials (sub-10 nm in diameter) have potential applications in chips, biosensors, thermoelectrics, desalination and other fields due to their large surface-to-volume ratio. Thermal annealing is a preferred technique to precisely control the ultra-fine nanopore size. Here, the 3D morphological evolution of a membrane with periodic nanopores by thermal annealing is studied. It is found that the evolution is determined by the combination of the membrane thickness, the initial nanopore radius and the periodic length of the porous pattern, rather than the previously suggested ratio between the membrane thickness and pore radius. High-temperature annealing experiments and molecular dynamics simulations are performed to confirm the rationality of the newly proposed model. Energy analysis demonstrates that surface energy minimization is the driving force of the morphological evolution. The local minimum of energy in the new model provides the possibility of thermal stability of nanoporous silicon as a thermoelectric material. This study provides guidance for the mass production of nanoporous membranes with high-temperature annealing.
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Affiliation(s)
- Jianqiang Ma
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Sien Wang
- Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, AZ, 85721-0119, USA.
| | - Xiao Wan
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Dengke Ma
- NNU-SULI Thermal Energy Research Center (NSTER) & Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China
| | - Yue Xiao
- Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, AZ, 85721-0119, USA.
| | - Qing Hao
- Department of Aerospace and Mechanical Engineering, University of Arizona, Tucson, AZ, 85721-0119, USA.
| | - Nuo Yang
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
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Park J, Huh D, Son S, Kim W, Ju S, Lee H. Transparent, Flexible, and Low-Operating-Voltage Resistive Switching Memory Based on Al 2O 3/IZO Multilayer. GLOBAL CHALLENGES (HOBOKEN, NJ) 2022; 6:2100118. [PMID: 35860392 PMCID: PMC9284630 DOI: 10.1002/gch2.202100118] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Revised: 04/17/2022] [Indexed: 06/16/2023]
Abstract
In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al2O3-based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al2O3/IZO multilayer transparent memory has a transmittance of at least 65% in the wavelength range of 400-900 nm. In addition, the Al2O3/IZO multilayer transparent memory can achieve an electroforming voltage that is 35.7% lower than that of ITO/pure-Al2O3/IZO transparent memory. The fabricated Al2O3/IZO multilayer transparent memory exhibits typical bipolar resistive switching behavior, regardless of the number of IZO interlayers. Also, the fabricated Al2O3/IZO multilayer transparent memory has a low operating voltage within ±1.5 V. In addition, a flexible Al2O3/IZO multilayer transparent memory is fabricated using the same process on ITO-coated polyethylene terephthalate. The fabricated flexible transparent memory also maintains the resistive switching characteristics during the bending state.
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Affiliation(s)
- Jaemin Park
- Department of Materials Science and EngineeringKorea UniversityAnam‐ro 145, Seongbuk‐guSeoul136‐713Republic of Korea
| | - Daihong Huh
- Department of Materials Science and EngineeringKorea UniversityAnam‐ro 145, Seongbuk‐guSeoul136‐713Republic of Korea
| | - Soomin Son
- Department of Materials Science and EngineeringKorea UniversityAnam‐ro 145, Seongbuk‐guSeoul136‐713Republic of Korea
| | - Wonjoong Kim
- Department of Materials Science and EngineeringKorea UniversityAnam‐ro 145, Seongbuk‐guSeoul136‐713Republic of Korea
| | - Sucheol Ju
- Department of Materials Science and EngineeringKorea UniversityAnam‐ro 145, Seongbuk‐guSeoul136‐713Republic of Korea
| | - Heon Lee
- Department of Materials Science and EngineeringKorea UniversityAnam‐ro 145, Seongbuk‐guSeoul136‐713Republic of Korea
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5
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Controlling resistive switching behavior in the solution processed SiO 2-x device by the insertion of TiO 2 nanoparticles. Sci Rep 2022; 12:8405. [PMID: 35589798 PMCID: PMC9120027 DOI: 10.1038/s41598-022-12476-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/23/2022] [Accepted: 05/04/2022] [Indexed: 11/24/2022] Open
Abstract
The resistive switching behavior of the solution processed SiOx device was investigated by inserting TiO2 nanoparticles (NPs). Compared to the pristine SiOx device, the TiO2 NPs inserted SiOx (SiOx@TiO2 NPs) device achieves outstanding switching characteristics, namely a higher ratio of SET/RESET, lower operating voltages, improved cycle-to-cycle variability, faster switching speed, and multiple-RESET states. Density functional theory calculation (DFT) and circuit breaker simulation (CB) were used to detail the origin of the outstanding switching characteristic of the SiOx@TiO2 NPs. The improvement in resistive switching is mainly based on the difference in formation/rupture of the conductive path in the SiO2 and SiO2@TiO2 NPs devices. In particular, the reduction of resistance and lower switching voltage of TiO2 NPs control the formation and rupture of the conductive path to achieve more abrupt switching between SET/RESET with higher on/off ratio. This method of combined DFT calculation and CB offers a promising approach for high-performance non-volatile memory applications.
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Choi S, Jang J, Kim MS, Kim ND, Kwag J, Wang G. Flexible Neural Network Realized by the Probabilistic SiO x Memristive Synaptic Array for Energy-Efficient Image Learning. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104773. [PMID: 35170246 PMCID: PMC9009121 DOI: 10.1002/advs.202104773] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2021] [Revised: 12/31/2021] [Indexed: 06/14/2023]
Abstract
The human brain's neural networks are sparsely connected via tunable and probabilistic synapses, which may be essential for performing energy-efficient cognitive and intellectual functions. In this sense, the implementation of a flexible neural network with probabilistic synapses is a first step toward realizing the ultimate energy-efficient computing framework. Here, inspired by the efficient threshold-tunable and probabilistic rod-to-rod bipolar synapses in the human visual system, a 16 × 16 crossbar array comprising the vertical form of gate-tunable probabilistic SiOx memristive synaptic barristor utilizing the Si/graphene heterojunction is designed and fabricated. Controllable stochastic switching dynamics in this array are achieved via various input voltage pulse schemes. In particular, the threshold tunability via electrostatic gating enables the efficient in situ alteration of the probabilistic switching activation (PAct ) from 0 to 1.0, and can even modulate the degree of the PAct change. A drop-connected algorithm based on the PAct is constructed and used to successfully classify the shapes of several fashion items. The suggested approach can decrease the learning energy by up to ≈2,116 times relative to that of the conventional all-to-all connected network while exhibiting a high recognition accuracy of ≈93 %.
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Affiliation(s)
- Sanghyeon Choi
- KU‐KIST Graduate School of Converging Science and TechnologyKorea University145 Anam‐ro, Seongbuk‐guSeoul02841Republic of Korea
| | - Jingon Jang
- KU‐KIST Graduate School of Converging Science and TechnologyKorea University145 Anam‐ro, Seongbuk‐guSeoul02841Republic of Korea
| | - Min Seob Kim
- Institute of Advanced Composite MaterialsKorea Institute of Science and Technology92 Chudong‐ro, Bongdong‐eupWanju‐gunJeollabuk‐do55324Republic of Korea
| | - Nam Dong Kim
- Institute of Advanced Composite MaterialsKorea Institute of Science and Technology92 Chudong‐ro, Bongdong‐eupWanju‐gunJeollabuk‐do55324Republic of Korea
| | - Jeehyun Kwag
- Department of Brain and Cognitive EngineeringKorea UniversitySeoul02841Republic of Korea
| | - Gunuk Wang
- KU‐KIST Graduate School of Converging Science and TechnologyKorea University145 Anam‐ro, Seongbuk‐guSeoul02841Republic of Korea
- Department of Integrative Energy EngineeringKorea University145 Anam‐ro, Seongbuk‐guSeoul02841Republic of Korea
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7
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Choi S, Kim GS, Yang J, Cho H, Kang CY, Wang G. Controllable SiO x Nanorod Memristive Neuron for Probabilistic Bayesian Inference. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2104598. [PMID: 34618384 DOI: 10.1002/adma.202104598] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2021] [Revised: 09/06/2021] [Indexed: 06/13/2023]
Abstract
Modern artificial neural network technology using a deterministic computing framework is faced with a critical challenge in dealing with massive data that are largely unstructured and ambiguous. This challenge demands the advances of an elementary physical device for tackling these uncertainties. Here, we designed and fabricated a SiOx nanorod memristive device by employing the glancing angle deposition (GLAD) technique, suggesting a controllable stochastic artificial neuron that can mimic the fundamental integrate-and-fire signaling and stochastic dynamics of a biological neuron. The nanorod structure provides the random distribution of multiple nanopores all across the active area, capable of forming a multitude of Si filaments at many SiOx nanorod edges after the electromigration process, leading to a stochastic switching event with very high dynamic range (≈5.15 × 1010 ) and low energy (≈4.06 pJ). Different probabilistic activation (ProbAct) functions in a sigmoid form are implemented, showing its controllability with low variation by manufacturing and electrical programming schemes. Furthermore, as an application prospect, based on the suggested memristive neuron, we demonstrated the self-resting neural operation with the local circuit configuration and revealed probabilistic Bayesian inferences for genetic regulatory networks with low normalized mean squared errors (≈2.41 × 10-2 ) and its robustness to the ProbAct variation.
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Affiliation(s)
- Sanghyeon Choi
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Gwang Su Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Republic of Korea
| | - Jehyeon Yang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Haein Cho
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Chong-Yun Kang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, Republic of Korea
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Integrative Energy Engineering, College of Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
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8
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Lanza M, Waser R, Ielmini D, Yang JJ, Goux L, Suñe J, Kenyon AJ, Mehonic A, Spiga S, Rana V, Wiefels S, Menzel S, Valov I, Villena MA, Miranda E, Jing X, Campabadal F, Gonzalez MB, Aguirre F, Palumbo F, Zhu K, Roldan JB, Puglisi FM, Larcher L, Hou TH, Prodromakis T, Yang Y, Huang P, Wan T, Chai Y, Pey KL, Raghavan N, Dueñas S, Wang T, Xia Q, Pazos S. Standards for the Characterization of Endurance in Resistive Switching Devices. ACS NANO 2021; 15:17214-17231. [PMID: 34730935 DOI: 10.1021/acsnano.1c06980] [Citation(s) in RCA: 35] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.
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Affiliation(s)
- Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Rainer Waser
- Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
- Peter-Grünberg-Institut (PGI-10), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
- Institut für Werkstoffe der Elektrotechnik 2 (IWE2), RWTH Aachen University, Aachen 52074, Germany
| | - Daniele Ielmini
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, Milano, 20133, Italy
| | - J Joshua Yang
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | | | - Jordi Suñe
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Barcelona 08193, Spain
| | - Anthony Joseph Kenyon
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
| | - Adnan Mehonic
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
| | - Sabina Spiga
- CNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza (MB) 20864, Italy
| | - Vikas Rana
- Peter-Grünberg-Institut (PGI-10), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Stefan Wiefels
- Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Stephan Menzel
- Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Ilia Valov
- Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Marco A Villena
- Applied Materials Inc., Via Ruini, Reggio Emilia 74L 42122, Italy
| | - Enrique Miranda
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Barcelona 08193, Spain
| | - Xu Jing
- School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Francesca Campabadal
- Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica, Consejo Superior de Investigaciones Científicas, Bellaterra 08193, Spain
| | - Mireia B Gonzalez
- Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica, Consejo Superior de Investigaciones Científicas, Bellaterra 08193, Spain
| | - Fernando Aguirre
- Unidad de Investigación y Desarrollo de las Ingenierías-CONICET, Facultad Regional Buenos Aires, Universidad Tecnológica Nacional (UIDI-CONICET/FRBA-UTN), Buenos Aires, Medrano 951(C1179AAQ), Argentina
| | - Felix Palumbo
- Unidad de Investigación y Desarrollo de las Ingenierías-CONICET, Facultad Regional Buenos Aires, Universidad Tecnológica Nacional (UIDI-CONICET/FRBA-UTN), Buenos Aires, Medrano 951(C1179AAQ), Argentina
| | - Kaichen Zhu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Juan Bautista Roldan
- Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, Granada 18071, Spain
| | - Francesco Maria Puglisi
- Dipartimento di Ingegneria "Enzo Ferrari", Università di Modena e Reggio Emilia, Via P. Vivarelli 10/1, Modena 41125, Italy
| | - Luca Larcher
- Applied Materials Inc., Via Ruini, Reggio Emilia 74L 42122, Italy
| | - Tuo-Hung Hou
- Department of Electronics Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Themis Prodromakis
- Centre for Electronics Frontiers, University of Southampton, Southampton SO171BJ, United Kingdom
| | - Yuchao Yang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Department of Micro/nanoelectronics, Peking University, Beijing 100871, China
| | - Peng Huang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Department of Micro/nanoelectronics, Peking University, Beijing 100871, China
| | - Tianqing Wan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong
| | - Kin Leong Pey
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372 Singapore
| | - Nagarajan Raghavan
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372 Singapore
| | - Salvador Dueñas
- Department of Electronics, University of Valladolid, Paseo de Belén 15, Valladolid E-47011, Spain
| | - Tao Wang
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University 199 Ren-Ai Road, Suzhou 215123, China
| | - Qiangfei Xia
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003-9292, United States
| | - Sebastian Pazos
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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Chakrabarti B, Chan H, Alam K, Koneru A, Gage TE, Ocola LE, Divan R, Rosenmann D, Khanna A, Grisafe B, Sanders T, Datta S, Arslan I, Sankaranarayan SKRS, Guha S. Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis. ACS NANO 2021; 15:4155-4164. [PMID: 33646747 DOI: 10.1021/acsnano.0c03201] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Resistance switching in metal-insulator-metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility. In this work, we have addressed these issues by demonstrating the use of ultraporous dielectrics as a pathway for high-performance resistive memory devices. Using a modified atomic layer deposition based technique known as sequential infiltration synthesis, which was developed originally for improving polymer properties such as enhanced etch resistance of electron-beam resists and for the creation of films for filtration and oleophilic applications, we are able to create ∼15 nm thick ultraporous (pore size ∼5 nm) oxide dielectrics with up to 73% porosity as the medium for filament formation. We show, using the Ag/Al2O3 system, that the ultraporous films result in ultrahigh on/off ratio (>109) at ultralow switching voltages (∼±600 mV) that are 10× smaller than those for the bulk case. In addition, the devices demonstrate fast switching, pulsed endurance up to 1 million cycles. and high temperature (125 °C) retention up to 104 s, making this approach highly promising for large-scale neuromorphic and memory applications. Additionally, this synthesis methodology provides a compatible, inexpensive route that is scalable and compatible with existing semiconductor nanofabrication methods and materials.
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Affiliation(s)
- Bhaswar Chakrabarti
- Institute for Molecular Engineering, Eckhardt Research Center, University of Chicago, 5640 S. Ellis Avenue, Chicago, Illinois 60637, United States
| | - Henry Chan
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Mechanical and Industrial Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, United States
| | - Khan Alam
- Institute for Molecular Engineering, Eckhardt Research Center, University of Chicago, 5640 S. Ellis Avenue, Chicago, Illinois 60637, United States
| | - Aditya Koneru
- Department of Mechanical and Industrial Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, United States
| | - Thomas E Gage
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Leonidas E Ocola
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Ralu Divan
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Daniel Rosenmann
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Abhishek Khanna
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Benjamin Grisafe
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Toby Sanders
- School of Mathematical and Statistical Sciences, Arizona State University, Tempe, Arizona 85287, United States
| | - Suman Datta
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Ilke Arslan
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Subramanian K R S Sankaranarayan
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Mechanical and Industrial Engineering, University of Illinois at Chicago, Chicago, Illinois 60607, United States
| | - Supratik Guha
- Institute for Molecular Engineering, Eckhardt Research Center, University of Chicago, 5640 S. Ellis Avenue, Chicago, Illinois 60637, United States
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
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10
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Kukli K, Kemell M, Heikkilä MJ, Castán H, Dueñas S, Mizohata K, Ritala M, Leskelä M. Silicon oxide-niobium oxide mixture films and nanolaminates grown by atomic layer deposition from niobium pentaethoxide and hexakis(ethylamino) disilane. NANOTECHNOLOGY 2020; 31:195713. [PMID: 31978899 DOI: 10.1088/1361-6528/ab6fd6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Amorphous SiO2-Nb2O5 nanolaminates and mixture films were grown by atomic layer deposition. The films were grown at 300 °C from Nb(OC2H5)5, Si2(NHC2H5)6, and O3 to thicknesses ranging from 13 to 130 nm. The niobium to silicon atomic ratio was varied in the range of 0.11-7.20. After optimizing the composition, resistive switching properties could be observed in the form of characteristic current-voltage behavior. Switching parameters in the conventional regime were well defined only in a SiO2:Nb2O5 mixture at certain, optimized, composition with Nb:Si atomic ratio of 0.13, whereas low-reading voltage measurements allowed recording memory effects in a wider composition range.
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Affiliation(s)
- Kaupo Kukli
- Department of Chemistry, University of Helsinki, PO Box 55, FI-00014 Helsinki, Finland
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11
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One-dimensional π-d conjugated coordination polymers: synthesis and their improved memory performance. Sci China Chem 2019. [DOI: 10.1007/s11426-018-9447-4] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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12
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Wijesinghe P, Ankit A, Sengupta A, Roy K. An All-Memristor Deep Spiking Neural Computing System: A Step Toward Realizing the Low-Power Stochastic Brain. IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTATIONAL INTELLIGENCE 2018. [DOI: 10.1109/tetci.2018.2829924] [Citation(s) in RCA: 52] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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13
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Mehonic A, Shluger AL, Gao D, Valov I, Miranda E, Ielmini D, Bricalli A, Ambrosi E, Li C, Yang JJ, Xia Q, Kenyon AJ. Silicon Oxide (SiO x ): A Promising Material for Resistance Switching? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1801187. [PMID: 29957849 DOI: 10.1002/adma.201801187] [Citation(s) in RCA: 51] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2018] [Revised: 04/30/2018] [Indexed: 06/08/2023]
Abstract
Interest in resistance switching is currently growing apace. The promise of novel high-density, low-power, high-speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications in hardware acceleration for machine learning and artificial intelligence, and for neuromorphic computing. A very wide range of material systems exhibit resistance switching, a number of which-primarily transition metal oxides-are currently being investigated as complementary metal-oxide-semiconductor (CMOS)-compatible technologies. Here, the case is made for silicon oxide, perhaps the most CMOS-compatible dielectric, yet one that has had comparatively little attention as a resistance-switching material. Herein, a taxonomy of switching mechanisms in silicon oxide is presented, and the current state of the art in modeling, understanding fundamental switching mechanisms, and exciting device applications is summarized. In conclusion, silicon oxide is an excellent choice for resistance-switching technologies, offering a number of compelling advantages over competing material systems.
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Affiliation(s)
- Adnan Mehonic
- Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK
| | - Alexander L Shluger
- Department of Physics and Astronomy, UCL, Gower Street, London, WC1E 6BT, UK
| | - David Gao
- Department of Physics and Astronomy, UCL, Gower Street, London, WC1E 6BT, UK
| | - Ilia Valov
- Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, 52074, Aachen, Germany
| | - Enrique Miranda
- Departament d'Enginyeria Electronica, Universitat Autonoma de Barcelona, 08193, Bellaterra, Spain
| | - Daniele Ielmini
- Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milan, 20133, Italy
| | - Alessandro Bricalli
- Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milan, 20133, Italy
| | - Elia Ambrosi
- Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milan, 20133, Italy
| | - Can Li
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - J Joshua Yang
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Qiangfei Xia
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Anthony J Kenyon
- Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK
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14
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Cheng XF, Hou X, Zhou J, Gao BJ, He JH, Li H, Xu QF, Li NJ, Chen DY, Lu JM. Pseudohalide-Induced 2D (CH 3 NH 3 ) 2 PbI 2 (SCN) 2 Perovskite for Ternary Resistive Memory with High Performance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1703667. [PMID: 29457377 DOI: 10.1002/smll.201703667] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2017] [Revised: 01/08/2018] [Indexed: 06/08/2023]
Abstract
Recently, organic-inorganic hybrid perovskites (OIHP) are studied in memory devices, but ternary resistive memory with three states based on OIHP is not achieved yet. In this work, ternary resistive memory based on hybrid perovskite is achieved with a high device yield (75%), much higher than most organic ternary resistive memories. The pseudohalide-induced 2D (CH3 NH3 )2 PbI2 (SCN)2 perovskite thin film is prepared by using a one-step solution method and fabricated into Al/perovskite film/indium-tin oxide (glass substrate as well as flexible polyethylene terephthalate substrate) random resistive access memory (RRAM) devices. The three states have a conductivity ratio of 1:103 :107 , long retention over 10 000 s, and good endurance properties. The electrode area variation, impedance test, and current-voltage plotting show that the two resistance switches are attributable to the charge trap filling due to the effect of unscreened defect in 2D nanosheets and the formation of conductive filaments, respectively. This work paves way for stable perovskite multilevel RRAMs in ambient atmosphere.
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Affiliation(s)
- Xue-Feng Cheng
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Xiang Hou
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Jin Zhou
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Bi-Jun Gao
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Jing-Hui He
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Qing-Feng Xu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Na-Jun Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Dong-Yun Chen
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
| | - Jian-Mei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, National United Engineering Laboratory of Functionalized Environmental Adsorption Materials, Soochow University, Suzhou, 215123, P. R. China
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15
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Kwon S, Jang S, Choi JW, Choi S, Jang S, Kim TW, Wang G. Controllable Switching Filaments Prepared via Tunable and Well-Defined Single Truncated Conical Nanopore Structures for Fast and Scalable SiO x Memory. NANO LETTERS 2017; 17:7462-7470. [PMID: 29182342 DOI: 10.1021/acs.nanolett.7b03373] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The controllability of switching conductive filaments is one of the central issues in the development of reliable metal-oxide resistive memory because the random dynamic nature and formation of the filaments pose an obstacle to desirable switching performance. Here, we introduce a simple and novel approach to control and form a single silicon nanocrystal (Si-NC) filament for use in SiOx memory devices. The filament is formed with a confined vertical nanoscale gap by using a well-defined single vertical truncated conical nanopore (StcNP) structure. The physical dimensions of the Si-NC filaments such as number, size, and length, which have a significant influence on the switching properties, can be simply engineered by the breakdown of an Au wire through different StcNP structures. In particular, we demonstrate that the designed SiOx memory junction with a StcNP of pore depth of ∼75 nm and a bottom diameter of ∼10 nm exhibited a switching speed of up to 6 ns for both set and reset process, significantly faster than reported SiOx memory devices. The device also exhibited a high ON-OFF ratio, multistate storage ability, acceptable endurance, and retention stability. The influence of the physical dimensions of the StcNP on the switching features is discussed based on the simulated temperature profiles of the Au wire and the nanogap size generated inside the StcNP structure during electromigration.
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Affiliation(s)
- Soonbang Kwon
- KU-KIST Graduate School of Converging Science and Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Seonghoon Jang
- KU-KIST Graduate School of Converging Science and Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jae-Wan Choi
- KU-KIST Graduate School of Converging Science and Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Sanghyeon Choi
- KU-KIST Graduate School of Converging Science and Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Sukjae Jang
- Applied Quantum Composites Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology , San 101 Eunha-ri, Bongdong-eup, Wanju-gun, Jeollabuk-do 55324, Republic of Korea
| | - Tae-Wook Kim
- Applied Quantum Composites Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology , San 101 Eunha-ri, Bongdong-eup, Wanju-gun, Jeollabuk-do 55324, Republic of Korea
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science and Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
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16
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Kim Y, Choi H, Park HS, Kang MS, Shin KY, Lee SS, Park JH. Reliable Multistate Data Storage with Low Power Consumption by Selective Oxidation of Pyramid-Structured Resistive Memory. ACS APPLIED MATERIALS & INTERFACES 2017; 9:38643-38650. [PMID: 29035500 DOI: 10.1021/acsami.7b10188] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Multilevel data storage using resistive random access memory (RRAM) has attracted significant attention for addressing the challenges associated with the rapid advances in information technologies. However, it is still difficult to secure reliable multilevel resistive switching of RRAM due to the stochastic and multiple formation of conductive filaments (CFs). Herein, we demonstrate that a single CF, derived from selective oxidation by a structured Cu active electrode, can solve the reliability issue. High-quality pyramidal Cu electrodes with a sharp tip are prepared via the template-stripping method. Morphology-dependent surface energy facilitates the oxidation of Cu atoms at the tip rather than in other regions, and the tip-enhanced electric fields can accelerate the transport of the generated Cu ions. As a result, CF growth occurs mainly at the tip of the pyramidal electrode, which is confirmed by high-resolution electron microscopy and elemental analysis. The RRAM exhibits highly uniform and low forming voltages (the average forming voltage and its standard deviation for 20 pyramid-based RRAMs are 0.645 and 0.072 V, respectively). Moreover, all multilevel resistance states for the RRAMs are clearly distinguished and show narrow distributions within 1 order of magnitude, leading to reliable cell-to-cell performance for MLC operation.
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Affiliation(s)
- Youngjin Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University , Seoul 02841, Korea
- Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology , Seoul 02792, Korea
| | - Hanhyeong Choi
- Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology , Seoul 02792, Korea
- School of Chemical and Biological Engineering, Seoul National University , Seoul 08826, Korea
| | - Hyun S Park
- Fuel Cell Research Center, Korea Institute of Science and Technology , Seoul 02792, Korea
| | - Moon Sung Kang
- Department of Chemical Engineering, Soongsil University , Seoul 06978, Korea
| | - Keun-Young Shin
- Department of Materials Science and Engineering, Hallym University , Chuncheon 24252, Korea
| | - Sang-Soo Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University , Seoul 02841, Korea
- Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology , Seoul 02792, Korea
| | - Jong Hyuk Park
- Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology , Seoul 02792, Korea
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17
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Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure. Sci Rep 2017; 7:9274. [PMID: 28839255 PMCID: PMC5571160 DOI: 10.1038/s41598-017-09565-8] [Citation(s) in RCA: 36] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/03/2017] [Accepted: 07/24/2017] [Indexed: 11/22/2022] Open
Abstract
We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiOx) films with varying degrees of roughness at the oxide-electrode interface. By combining electrical probing measurements, atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM), we observe that devices with rougher oxide-electrode interfaces exhibit lower electroforming voltages and more reliable switching behaviour. We show that rougher interfaces are consistent with enhanced columnar microstructure in the oxide layer. Our results suggest that columnar microstructure in the oxide will be a key factor to consider for the optimization of future SiOx-based resistance random access memory.
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18
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Hou X, Cheng XF, Xiao X, He JH, Xu QF, Li H, Li NJ, Chen DY, Lu JM. Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain. Chem Asian J 2017; 12:2278-2283. [DOI: 10.1002/asia.201700706] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2017] [Revised: 06/09/2017] [Indexed: 11/06/2022]
Affiliation(s)
- Xiang Hou
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Xue-Feng Cheng
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Xin Xiao
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Jing-Hui He
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Qing-Feng Xu
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Hua Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Na-Jun Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Dong-Yun Chen
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
| | - Jian-Mei Lu
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology Institution; Soochow University; Suzhou 215123 China
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19
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Hou X, Xiao X, Zhou QH, Cheng XF, He JH, Xu QF, Li H, Li NJ, Chen DY, Lu JM. Surface engineering to achieve organic ternary memory with a high device yield and improved performance. Chem Sci 2016; 8:2344-2351. [PMID: 28451339 PMCID: PMC5364995 DOI: 10.1039/c6sc03986c] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2016] [Accepted: 12/15/2016] [Indexed: 11/21/2022] Open
Abstract
Organic memories fabricated on surface-engineered indium tin oxide show the highest ternary yield (82%) to date and better performance.
Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distribution, and better retention as well as resistance uniformity.
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Affiliation(s)
- Xiang Hou
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Xin Xiao
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Qian-Hao Zhou
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Xue-Feng Cheng
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Jing-Hui He
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Qing-Feng Xu
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Na-Jun Li
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Dong-Yun Chen
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Jian-Mei Lu
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
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20
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You BK, Kim JM, Joe DJ, Yang K, Shin Y, Jung YS, Lee KJ. Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric-Field Concentrators. ACS NANO 2016; 10:9478-9488. [PMID: 27718554 DOI: 10.1021/acsnano.6b04578] [Citation(s) in RCA: 38] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Memristor devices based on electrochemical metallization operate through electrochemical formation/dissolution of nanoscale metallic filaments, and they are considered a promising future nonvolatile memory because of their outstanding characteristics over conventional charge-based memories. However, nanoscale conductive paths or filaments precipitated from the redox process of metallic elements are randomly formed inside oxides, resulting in unexpected and stochastic memristive switching parameters including the operating voltage and the resistance state. Here, we present the guided formation of conductive filaments in Ag nanocone/SiO2 nanomesh/Pt memristors fabricated by high-resolution nanotransfer printing. Consequently, the uniformity of the memristive switching behavior is significantly improved by the existence of electric-field concentrator arrays consisting of Ag nanocones embedded in SiO2 nanomesh structures. This selective and controlled filament growth was experimentally supported by analyzing simultaneously the surface morphology and current-mapping results using conductive atomic force microscopy. Moreover, stable multilevel switching operations with four discrete conduction states were achieved by the nanopatterned memristor device, demonstrating its potential in high-density nanoscale memory devices.
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Affiliation(s)
- Byoung Kuk You
- Department of Materials Science and Engineering and ‡Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jong Min Kim
- Department of Materials Science and Engineering and ‡Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Daniel J Joe
- Department of Materials Science and Engineering and ‡Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Kyounghoon Yang
- Department of Materials Science and Engineering and ‡Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Youngsoo Shin
- Department of Materials Science and Engineering and ‡Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Yeon Sik Jung
- Department of Materials Science and Engineering and ‡Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Keon Jae Lee
- Department of Materials Science and Engineering and ‡Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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21
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Ji Y, Yang Y, Lee SK, Ruan G, Kim TW, Fei H, Lee SH, Kim DY, Yoon J, Tour JM. Flexible Nanoporous WO3-x Nonvolatile Memory Device. ACS NANO 2016; 10:7598-7603. [PMID: 27482761 DOI: 10.1021/acsnano.6b02711] [Citation(s) in RCA: 40] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3-x RRAM device showed bipolar switching characteristics and a high ION/IOFF ratio of ∼10(5). The device also showed stable retention time over 5 × 10(5) s, outstanding cell-to-cell uniformity, and bending endurance over 10(3) cycles when measured in both the flat and the maximum bending conditions.
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Affiliation(s)
| | | | | | | | - Tae-Wook Kim
- Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology , Joellabuk-do 565-905, Republic of Korea
| | | | - Seung-Hoon Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology , Gwangju 500-712, Republic of Korea
| | - Dong-Yu Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology , Gwangju 500-712, Republic of Korea
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22
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Ghazaryan L, Kley EB, Tünnermann A, Szeghalmi A. Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching. NANOTECHNOLOGY 2016; 27:255603. [PMID: 27176497 DOI: 10.1088/0957-4484/27/25/255603] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
A new route to prepare nanoporous SiO2 films by mixing atomic-layer-deposited alumina and silica in an Å-scale is presented. The selective removal of Al2O3 from the composites using wet chemical etching with phosphoric acid resulted in nanoporous thin SiO2 layers. A diffusion-controlled dissolution mechanism is identified whereby an interesting reorganization of the residual SiO2 is observed. The atomic scale oxide mixing is decisive in attaining and tailoring the film porosity. The porosity and the refractive index of nanoporous silica films were tailored from 9% to 69% and from 1.40 to 1.13, respectively. The nanoporous silica was successfully employed as antireflection coatings and as diffusion membranes to encapsulate nanostructures.
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Affiliation(s)
- Lilit Ghazaryan
- Institute of Applied Physics, Abbe Center of Photonics, Albert-Einstein-Straße 15, D-07745, Jena, Germany
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23
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Acharya SK, Nallagatla RV, Togibasa O, Lee BW, Liu C, Jung CU, Park BH, Park JY, Cho Y, Kim DW, Jo J, Kwon DH, Kim M, Hwang CS, Chae SC. Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory. ACS APPLIED MATERIALS & INTERFACES 2016; 8:7902-7911. [PMID: 26955744 DOI: 10.1021/acsami.6b00647] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Resistive switching memory, which is mostly based on polycrystalline thin films, suffers from wide distributions in switching parameters-including set voltage, reset voltage, and resistance-in their low- and high-resistance states. One of the most commonly used methods to overcome this limitation is to introduce inhomogeneity. By contrast, in this paper, we obtained uniform resistive switching parameters and sufficiently low forming voltage by maximizing the uniformity of an epitaxial thin film. To achieve this result, we deposited an SrFeOx/SrRuO3 heteroepitaxial structure onto an SrTiO3 (001) substrate by pulsed laser deposition, and then we deposited an Au top electrode by electron-beam evaporation. This device exhibited excellent bipolar resistance switching characteristics, including a high on/off ratio, narrow distribution of key switching parameters, and long data retention time. We interpret these phenomena in terms of a local, reversible phase transformation in the SrFeOx film between brownmillerite and perovskite structures. Using the brownmillerite structure and atomically uniform thickness of the heteroepitaxial SrFeOx thin film, we overcame two major hurdles in the development of resistive random-access memory devices: high forming voltage and broad distributions of switching parameters.
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Affiliation(s)
- Susant K Acharya
- Department of Physics and Oxide Research Centre, Hankuk University of Foreign Studies , Yongin 449-791, Korea
| | | | - Octolia Togibasa
- Department of Physics and Oxide Research Centre, Hankuk University of Foreign Studies , Yongin 449-791, Korea
| | - Bo W Lee
- Department of Physics and Oxide Research Centre, Hankuk University of Foreign Studies , Yongin 449-791, Korea
| | - Chunli Liu
- Department of Physics and Oxide Research Centre, Hankuk University of Foreign Studies , Yongin 449-791, Korea
| | - Chang U Jung
- Department of Physics and Oxide Research Centre, Hankuk University of Foreign Studies , Yongin 449-791, Korea
| | - Bae Ho Park
- Division of Quantum Phases and Devices, Department of Physics, Konkuk University , Seoul 143-791, Korea
| | - Ji-Yong Park
- Department of Physics and Department of Energy Systems Research, Ajou University , Suwon 443-749, Korea
| | - Yunae Cho
- Department of Physics, Ewha Womans University , Seoul 120-750, Korea
| | - Dong-Wook Kim
- Department of Physics, Ewha Womans University , Seoul 120-750, Korea
| | - Janghyun Jo
- Department of Material Science and Engineering, Seoul National University , Seoul 151-747, Korea
| | - Deok-Hwang Kwon
- Department of Material Science and Engineering, Seoul National University , Seoul 151-747, Korea
| | - Miyoung Kim
- Department of Material Science and Engineering, Seoul National University , Seoul 151-747, Korea
| | - Cheol Seong Hwang
- Department of Material Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University , Seoul 151-744, Korea
| | - Seung C Chae
- Department of Physics Education, Seoul National University , Seoul 151-748, Korea
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Li Y, Li H, He J, Xu Q, Li N, Chen D, Lu J. Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge-Trapping in Organic Materials. Chem Asian J 2016; 11:906-14. [DOI: 10.1002/asia.201501441] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/25/2015] [Indexed: 11/11/2022]
Affiliation(s)
- Yang Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Hua Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Jinghui He
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Qingfeng Xu
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Najun Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Dongyun Chen
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Jianmei Lu
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
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25
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El Mel AA, Stephant N, Hamon J, Thiry D, Chauvin A, Chettab M, Gautron E, Konstantinidis S, Granier A, Tessier PY. Creating nanoporosity in silver nanocolumns by direct exposure to radio-frequency air plasma. NANOSCALE 2016; 8:141-8. [PMID: 26611109 DOI: 10.1039/c5nr07145c] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Nanoporous materials are of great importance for a broad range of applications including catalysis, optical sensors and water filtration. Although several approaches already exist for the creation of nanoporous materials, the race for the development of versatile methods, more suitable for the nanoelectronics industry, is still ongoing. In this communication we report for the first time on the possibility of generating nanoporosity in silver nanocolumns using a dry approach based on the oxidation of silver by direct exposure to a commercially available radio-frequency air plasma. The silver nanocolumns are created by glancing angle deposition using magnetron sputtering of a silver target in pure argon plasma. We show that upon exposure to the rf air plasma, the nanocolumns transform from solid silver into nanoporous silver oxide. We further show that by tuning the plasma pressure and the exposure duration, the oxidation process can be finely adjusted allowing for precisely controlling the morphology and the nanoporosity of the silver oxide nanocolumns. The generation of porosity within the silver nanocolumns is explained according to a cracking-induced oxidation mechanism based on two repeated events occurring alternately during the oxidation process: (i) oxidation of silver upon exposure to the air plasma and (ii) generation of nanocracks and blisters within the oxide layer due to the high internal stress generated within the material during oxidation.
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Affiliation(s)
- Abdel-Aziz El Mel
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 Rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France.
| | - Nicolas Stephant
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 Rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France.
| | - Jonathan Hamon
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 Rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France.
| | - Damien Thiry
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 Rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France.
| | - Adrien Chauvin
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 Rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France.
| | - Meriem Chettab
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 Rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France.
| | - Eric Gautron
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 Rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France.
| | - Stephanos Konstantinidis
- Chimie des Interactions Plasma-Surface (ChIPS), CIRMAP, Research Institute for Materials Science and Engineering, University of Mons, 23 Place du Parc, B-7000 Mons, Belgium
| | - Agnès Granier
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 Rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France.
| | - Pierre-Yves Tessier
- Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 Rue de la Houssinière B.P. 32229, 44322 Nantes cedex 3, France.
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26
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N. S, R. S. Investigation of porous silica nanostructures in diatoms isolated from Kurichi and Sulur lakes of Coimbatore, India using field emission scanning electron microscopy. Micron 2015; 79:24-8. [DOI: 10.1016/j.micron.2015.07.012] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2015] [Revised: 07/27/2015] [Accepted: 07/27/2015] [Indexed: 11/30/2022]
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27
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Zhang E, Wang W, Zhang C, Jin Y, Zhu G, Sun Q, Zhang DW, Zhou P, Xiu F. Tunable charge-trap memory based on few-layer MoS2. ACS NANO 2015; 9:612-9. [PMID: 25496773 DOI: 10.1021/nn5059419] [Citation(s) in RCA: 101] [Impact Index Per Article: 11.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Charge-trap memory with high-κ dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials like graphene and MoS2 have been receiving much attention because of their fantastic physical properties and potential applications in electronic devices. Here, we report on a dual-gate charge-trap memory device composed of a few-layer MoS2 channel and a three-dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack. Because of the extraordinary trapping ability of both electrons and holes in HfO2, the MoS2 memory device exhibits an unprecedented memory window exceeding 20 V. Importantly, with a back gate the window size can be effectively tuned from 15.6 to 21 V; the program/erase current ratio can reach up to 10(4), allowing for multibit information storage. Moreover, the device shows a high endurance of hundreds of cycles and a stable retention of ∼ 28% charge loss after 10 years, which is drastically lower than ever reported MoS2 flash memory. The combination of 2D materials with traditional high-κ charge-trap gate stacks opens up an exciting field of nonvolatile memory devices.
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Affiliation(s)
- Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China
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28
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Mohan Kumar G, Ilanchezhiyan P, Madhan Kumar A, Shabi TS, Tamil Selvan S, Suresh S, Yuldashev SU, Kang TW. Chemically-derived CuO/In2O3-based nanocomposite for diode applications. CrystEngComm 2015. [DOI: 10.1039/c5ce00853k] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The potential of CuO-based nanocomposite synthesized through a facile surfactant-free wet chemical strategy has been demonstrated for photoelectronic applications.
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Affiliation(s)
- G. Mohan Kumar
- Quantum-Functional Semiconductor Research Center
- Dongguk University
- Seoul, Republic of Korea
| | - P. Ilanchezhiyan
- Quantum-Functional Semiconductor Research Center
- Dongguk University
- Seoul, Republic of Korea
| | - A. Madhan Kumar
- Center of Research Excellence in Corrosion
- King Fahd University of Petroleum & Minerals
- Kingdom of Saudi Arabia
| | - T. S. Shabi
- Department of Polymer Science and Engineering Zhejiang University
- Hangzhou, China
| | - S. Tamil Selvan
- Advanced Materials Processing and Analysis Center
- NanoScience Technology Center
- Materials Science Engineering
- University of Central Florida
- Orlando, USA
| | - S. Suresh
- GT-CNRS-UMI Lab
- Georgia Institute of Technology
- Metz, France
| | - Sh. U. Yuldashev
- Quantum-Functional Semiconductor Research Center
- Dongguk University
- Seoul, Republic of Korea
| | - T. W. Kang
- Quantum-Functional Semiconductor Research Center
- Dongguk University
- Seoul, Republic of Korea
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