1
|
Zhou J, Huang H, Wang Q, Li Z, Chen S, Yu J, Zhong Y, Chen J, Huang H. Extended-Gate FET Biosensor Based on GaN Micropillar Array and Polycrystalline Layer: Application to Hg 2+ Detection in Human Urine. Anal Chem 2024; 96:7577-7584. [PMID: 38696338 DOI: 10.1021/acs.analchem.4c00435] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/04/2024]
Abstract
Owing to the separation of field-effect transistor (FET) devices from sensing environments, extended-gate FET (EGFET) biosensor features high stability and low cost. Herein, a highly sensitive EGFET biosensor based on a GaN micropillar array and polycrystalline layer (GMP) was fabricated, which was prepared by using simple one-step low-temperature MOCVD growth. In order to improve the sensitivity and detection limit of EGFET biosensor, the surface area and the electrical conductivity of extended-gate electrode can be increased by the micropillar array and the polycrystalline layer, respectively. The designed GMP-EGFET biosensor was modified with l-cysteine and applied for Hg2+ detection with a low limit of detection (LOD) of 1 ng/L, a high sensitivity of -16.3 mV/lg(μg/L) and a wide linear range (1 ng/L-24.5 μg/L). In addition, the detection of Hg2+ in human urine was realized with an LOD of 10 ng/L, which was more than 30 times lower than that of reported sensors. To our knowledge, it is the first time that GMP was used as extended-gate of EGFET biosensor.
Collapse
Affiliation(s)
- Jialing Zhou
- School of Biomedical Engineering, Faculty of Medicine, Dalian University of Technology, Dalian 116024, China
- School of Control Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Hui Huang
- School of Control Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Qian Wang
- School of Control Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Zhirui Li
- School of Control Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Shunji Chen
- School of Control Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Jun Yu
- School of Biomedical Engineering, Faculty of Medicine, Dalian University of Technology, Dalian 116024, China
| | - Yuan Zhong
- Center for Advanced Measurement Science, National Institute of PR Metrology, Beijing 100029, China
| | - Jing Chen
- Electrical & Electronic Experimental Center, Dalian University of Technology, Dalian 116024, China
| | - Huolin Huang
- School of Optoelectronic Engineering and Instrument Science, Dalian University of Technology, Dalian 116024, China
| |
Collapse
|
2
|
Chrystie RSM. A Review on 1-D Nanomaterials: Scaling-Up with Gas-Phase Synthesis. CHEM REC 2023; 23:e202300087. [PMID: 37309743 DOI: 10.1002/tcr.202300087] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Revised: 05/04/2023] [Indexed: 06/14/2023]
Abstract
Nanowire-like materials exhibit distinctive properties comprising optical polarisation, waveguiding, and hydrophobic channelling, amongst many other useful phenomena. Such 1-D derived anisotropy can be further enhanced by arranging many similar nanowires into a coherent matrix, known as an array superstructure. Manufacture of nanowire arrays can be scaled-up considerably through judicious use of gas-phase methods. Historically, the gas-phase approach however has been extensively used for the bulk and rapid synthesis of isotropic 0-D nanomaterials such as carbon black and silica. The primary goal of this review is to document recent developments, applications, and capabilities in gas-phase synthesis methods of nanowire arrays. Secondly, we elucidate the design and use of the gas-phase synthesis approach; and finally, remaining challenges and needs are addressed to advance this field.
Collapse
Affiliation(s)
- Robin S M Chrystie
- Department of Chemical Engineering, King Fahd University of Petroleum & Minerals, KFUPM Box 5050, Dhahran, 31261, Saudi Arabia
- IRC for Membranes & Water Security, King Fahd University of Petroleum & Minerals, KFUPM Box 5051, Dhahran, 31261, Saudi Arabia
| |
Collapse
|
3
|
Wang W, Ngo É, Bulkin P, Zhang Z, Foldyna M, Roca I Cabarrocas P, Johnson EV, Maurice JL. Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditions. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2061. [PMID: 37513072 PMCID: PMC10384329 DOI: 10.3390/nano13142061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 07/07/2023] [Accepted: 07/10/2023] [Indexed: 07/30/2023]
Abstract
We report silicon nanowire (SiNW) growth with a novel Cu-In bimetallic catalyst using a plasma-enhanced chemical vapor deposition (PECVD) method. We study the structure of the catalyst nanoparticles (NPs) throughout a two-step process that includes a hydrogen plasma pre-treatment at 200 °C and the SiNW growth itself in a hydrogen-silane plasma at 420 °C. We show that the H2-plasma induces a coalescence of the Cu-rich cores of as-deposited thermally evaporated NPs that does not occur when the same annealing is applied without plasma. The SiNW growth process at 420 °C induces a phase transformation of the catalyst cores to Cu7In3; while a hydrogen plasma treatment at 420 °C without silane can lead to the formation of the Cu11In9 phase. In situ transmission electron microscopy experiments show that the SiNWs synthesis with Cu-In bimetallic catalyst NPs follows an essentially vapor-solid-solid process. By adjusting the catalyst composition, we manage to obtain small-diameter SiNWs-below 10 nm-among which we observe the metastable hexagonal diamond phase of Si, which is predicted to have a direct bandgap.
Collapse
Affiliation(s)
- Weixi Wang
- Laboratoire de Physique des Interfaces et Couches Minces, École Polytechnique, CNRS, IPParis, 91120 Palaiseau, France
| | - Éric Ngo
- Laboratoire de Physique des Interfaces et Couches Minces, École Polytechnique, CNRS, IPParis, 91120 Palaiseau, France
| | - Pavel Bulkin
- Laboratoire de Physique des Interfaces et Couches Minces, École Polytechnique, CNRS, IPParis, 91120 Palaiseau, France
| | - Zhengyu Zhang
- Laboratoire LuMIn, École Normale Supérieure Paris-Saclay, CentraleSupélec, Université Paris-Saclay, CNRS, 91190 Gif-sur-Yvette, France
| | - Martin Foldyna
- Laboratoire de Physique des Interfaces et Couches Minces, École Polytechnique, CNRS, IPParis, 91120 Palaiseau, France
| | - Pere Roca I Cabarrocas
- Laboratoire de Physique des Interfaces et Couches Minces, École Polytechnique, CNRS, IPParis, 91120 Palaiseau, France
| | - Erik V Johnson
- Laboratoire de Physique des Interfaces et Couches Minces, École Polytechnique, CNRS, IPParis, 91120 Palaiseau, France
| | - Jean-Luc Maurice
- Laboratoire de Physique des Interfaces et Couches Minces, École Polytechnique, CNRS, IPParis, 91120 Palaiseau, France
| |
Collapse
|
4
|
Seifner MS, Hu T, Snellman M, Jacobsson D, Deppert K, Messing ME, Dick KA. Insights into the Synthesis Mechanisms of Ag-Cu 3P-GaP Multicomponent Nanoparticles. ACS NANO 2023; 17:7674-7684. [PMID: 37017472 PMCID: PMC10134500 DOI: 10.1021/acsnano.3c00140] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/05/2023] [Accepted: 04/03/2023] [Indexed: 06/19/2023]
Abstract
Metal-semiconductor nanoparticle heterostructures are exciting materials for photocatalytic applications. Phase and facet engineering are critical for designing highly efficient catalysts. Therefore, understanding processes occurring during the nanostructure synthesis is crucial to gain control over properties such as the surface and interface facets' orientations, morphology, and crystal structure. However, the characterization of nanostructures after the synthesis makes clarifying their formation mechanisms nontrivial and sometimes even impossible. In this study, we used an environmental transmission electron microscope with an integrated metal-organic chemical vapor deposition system to enlighten fundamental dynamic processes during the Ag-Cu3P-GaP nanoparticle synthesis using Ag-Cu3P seed particles. Our results reveal that the GaP phase nucleated at the Cu3P surface, and growth proceeded via a topotactic reaction involving counter-diffusion of Cu+ and Ga3+ cations. After the initial GaP growth steps, the Ag and Cu3P phases formed specific interfaces with the GaP growth front. GaP growth proceeded by a similar mechanism observed for the nucleation involving the diffusion of Cu atoms through/along the Ag phase toward other regions, followed by the redeposition of Cu3P at a specific Cu3P crystal facet, not in contact with the GaP phase. The Ag phase was essential for this process by acting as a medium enabling the efficient transport of Cu atoms away from and, simultaneously, Ga atoms toward the GaP-Cu3P interface. This study shows that enlightening fundamental processes is critical for progress in synthesizing phase- and facet-engineered multicomponent nanoparticles with tailored properties for specific applications, including catalysis.
Collapse
Affiliation(s)
- Michael S. Seifner
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| | - Tianyi Hu
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| | - Markus Snellman
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
| | - Daniel Jacobsson
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
- National
Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100 Lund, Sweden
| | - Knut Deppert
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
| | - Maria E. Messing
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
| | - Kimberly A. Dick
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, Box
118, 22100 Lund, Sweden
| |
Collapse
|
5
|
Shin J, Yang H, Noh S, Han S, Kim JS. Flexible 1.3 μm photodetector fabricated with InN nanowires and graphene on overhead projector transparency sheet. NANOSCALE 2022; 14:10793-10800. [PMID: 35838175 DOI: 10.1039/d2nr01802k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We report the first demonstration of flexible photodetectors, operating at the wavelength window of 1.3 μm, fabricated with InN nanowires (NWs) and graphene on an overhead projector transparency (OHP) sheet. The InN NWs, used as an absorption medium for the device, were formed on a Si substrate and exhibited strong emission with a peak wavelength of 1.3 μm at room temperature. They were randomly and horizontally embedded in the graphene sandwich structure functioned as a carrier channel. The photocurrent and photoresponsivity of the flexible photodetector were found to be 1.17 mA and 0.48 A W-1, respectively, at a voltage of 1 V and a light intensity of 60 mW cm-2 of a xenon lamp. The photocurrent measured when the photodetector was bent under a strain of 3% was 1.15 mA, which corresponds to 98.3% compared to that before bending. Moreover, the photocurrent and photoresponsivity of the flexible photodetector measured after the 200 cyclic-bending tests are comparable to those measured before bending.
Collapse
Affiliation(s)
- Jaehyeok Shin
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea.
| | - Hohyun Yang
- Smart Electronics Research Center, Korea Electronics Technology Institute, Iksan 54596, Republic of Korea
| | - Siyun Noh
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea.
| | - Sangmoon Han
- Precision Biology Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Mechanical Engineering & Materials Science, Washington University in Saint Louis, MO 66130, USA
| | - Jin Soo Kim
- Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea.
| |
Collapse
|
6
|
Zhang L, Li X, Cheng S, Shan C. Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures. MATERIALS 2022; 15:ma15051917. [PMID: 35269147 PMCID: PMC8911728 DOI: 10.3390/ma15051917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/23/2022] [Accepted: 02/24/2022] [Indexed: 12/02/2022]
Abstract
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.
Collapse
Affiliation(s)
| | - Xing Li
- Correspondence: (X.L.); (C.S.)
| | | | | |
Collapse
|
7
|
Zhang C, Jin X, Liang Y, Yang L, Li J, Wang R, Liu B, Lv X, Jiang X. Homogeneous and well-aligned GaN nanowire arrays via a modified HVPE process and their cathodoluminescence properties. NANOSCALE 2022; 14:1459-1467. [PMID: 35019934 DOI: 10.1039/d1nr07753h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In this work, we demonstrate the growth of homogeneous and well-aligned [0001]-oriented 1-D GaN nanoarrays via a modified hydride vapor phase epitaxy (HVPE) process using GaCl3 and NH3 as precursors. The density and length of the grown nanowires can be easily controlled by the process parameters. It was found that the growth technique provides Cl-rich growth conditions, which lead to special morphology and optical properties of the GaN nanoarrays. Different from reported GaN nanowires, the as-synthesized GaN nanoarrays in this study exhibit a hollow bamboo-like structure. Also, the cathodoluminescence spectrum shows strong visible luminescence between 400 and 600 nm wavelengths centered at 450 nm, and the disappearance of an intrinsic emission peak, which has been investigated in detail with the assistance of first-principles calculations. The strategy proposed in this work will pave a solid way for the controlled nucleation and growth of well-aligned GaN nanowire arrays which are significant for applications in large-scale integrated optoelectronic nanodevices, functionalized sensors and photoelectrocatalysis.
Collapse
Affiliation(s)
- Cai Zhang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
- School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang, China
| | - Xin Jin
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
| | - Yan Liang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
| | - Liu Yang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
- School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang, China
| | - Jing Li
- Foshan Graduate School of Northeastern University, No. 2, Zhihui Road, Foshan, China
| | - Rui Wang
- Institute for Structure and Function and Department of Physics, Chongqing University, Chongqing 400044, China
| | - Baodan Liu
- Foshan Graduate School of Northeastern University, No. 2, Zhihui Road, Foshan, China
| | - Xuewei Lv
- College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
| | - Xin Jiang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
| |
Collapse
|
8
|
Zhang C, Yang W, Li J, Jin X, Yang L, Liu B. Catalyst-assisted heteroepitaxial strategy for highly ordered β-Ga 2O 3nanoarrays and their optical property investigation. NANOTECHNOLOGY 2021; 32:505601. [PMID: 34438375 DOI: 10.1088/1361-6528/ac218d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2021] [Accepted: 08/25/2021] [Indexed: 06/13/2023]
Abstract
In this work, we demonstrate the growth of highly orderedβ-Ga2O3nanoarrays with (001) preferred growth plane for the first time through a facile heteroepitaxial strategy using metal Ga and c-sapphire as Ga precursor and monocrystalline substrate. The (001) preferred growth plane means that theβ-Ga2O3nanowires grow along the normal direction of the (001) plane. Theβ-Ga2O3nanoarrays along (001) preferential plane exhibit inclined six equivalent directions that correspond to the six crystallographic symmetry of (0001)α-Al2O3. High-resolution transmission electron microscopy analyses confirm the good crystallinity and the existence of unusual epitaxial relationship of {310}β-Ga2O3ǁ (0001)α-Al2O3and <001>β-Ga2O3or <132>β-Ga2O3ǁ [11¯00]α-Al2O3. UV-vis and cathodoluminescence measurements reveal the wide band gap of 4.8 eV and the strong UV-blue luminescence (300-500 nm) centered at ∼388 nm. Finally, the luminescence mechanism is further investigated with the assistance of x-ray photoelectron spectroscopy. The heteroepitaxial strategy of highly orderedβ-Ga2O3nanoarrays in this work will undoubtedly pave a solid way toward the fundamental research and the applications of Ga2O3nanodevices in optoelectronic, gas sensor, photocatalyst and next-generation power electronics.
Collapse
Affiliation(s)
- Cai Zhang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72 Wenhua Road, Shenyang 110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang 110016, People's Republic of China
| | - Wenjin Yang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72 Wenhua Road, Shenyang 110016, People's Republic of China
| | - Jing Li
- School of Materials Science and Engineering, Northeastern University, No. 11, Wenhua Road, Shenyang 110819, People's Republic of China
| | - Xin Jin
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72 Wenhua Road, Shenyang 110016, People's Republic of China
| | - Liu Yang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72 Wenhua Road, Shenyang 110016, People's Republic of China
- School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang 110016, People's Republic of China
| | - Baodan Liu
- School of Materials Science and Engineering, Northeastern University, No. 11, Wenhua Road, Shenyang 110819, People's Republic of China
- Foshan Graduate School of Northeastern University, No. 2, Zhihui Road, Foshan 528300, People's Republic of China
| |
Collapse
|
9
|
Wu S, Yi X, Tian S, Zhang S, Liu Z, Wang L, Wang J, Li J. Understanding homoepitaxial growth of horizontal kinked GaN nanowires. NANOTECHNOLOGY 2021; 32:095606. [PMID: 33212433 DOI: 10.1088/1361-6528/abcc24] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Epitaxial horizontal nanowires (NWs) have attracted much attention due to their easily large-scale integration. From the reported literature, epitaxial growth is usually driven by minimization of strain between NW and substrate, which governs the growth along with specific crystallographic orientation. Here, we report the first homoepitaxial growth of horizontal GaN NWs from a surface-directed vapor-liquid-solid growth method. The NWs grow along with six symmetry-equivalent 〈1-100〉 (m-axis) directions, exhibiting a random 60°/120° kinked configuration. Owing to homoepitaxial growth, strain could be eliminated. From the obtained results, we suggest that the formation the horizontal NWs, and their growth direction /orientation is not directly related to the strain minimization. A general rule based on the epitaxial relationship and potential low-index growth orientation is proposed for understanding the arrangement of epitaxial horizontal NWs. It is deduced that kinking of the horizontal NWs was attributed to unintentional guided growth determined by the roughness of the substrates' surface. This study provides an insight for a better understanding of the evolution of epitaxial horizontal NWs, especially for the growth direction/orientation.
Collapse
Affiliation(s)
- Shaoteng Wu
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China
| | - Xiaoyan Yi
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China
| | - Shuang Tian
- Jiangsu Key Laboratory for Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, People's Republic of China
| | - Shuo Zhang
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China
| | - Zhiqiang Liu
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China
| | - Liancheng Wang
- State key Laboratory of High-Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha Hunan, 410083, People's Republic of China
| | - Junxi Wang
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China
| | - Jinmin Li
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China
| |
Collapse
|
10
|
Waseem A, Johar MA, Hassan MA, Bagal IV, Abdullah A, Ha JS, Lee JK, Ryu SW. GaN Nanowire Growth Promoted by In-Ga-Au Alloy Catalyst with Emphasis on Agglomeration Temperature and In Composition. ACS OMEGA 2021; 6:3173-3185. [PMID: 33553933 PMCID: PMC7860063 DOI: 10.1021/acsomega.0c05587] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Accepted: 01/18/2021] [Indexed: 06/12/2023]
Abstract
The crystallographic orientation control of GaN nanowires (NWs) has been widely investigated by varying the V-III ratio. Here, we report the tuning of crystallographic orientation of GaN NWs by varying the composition of indium (In) in gallium-gold (Ga-Au) alloy catalyst using metal-organic chemical vapor deposition (MOCVD). The c-plane GaN thin film and sapphire substrate are used as growth templates. We found that the substrates of same orientation have a negligible influence on the orientation of the GaN NWs. The catalyst composition and the dimensions of alloy droplets determine the morphology of the NWs. The density of the NWs was controlled by tuning the droplet size of the alloy catalysts. With the constant V/III ratio, the crystallographic orientation of the GaN NWs was tuned from m- to c-axis by increasing the In composition inside alloy catalyst.
Collapse
Affiliation(s)
- Aadil Waseem
- Department
of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
| | - Muhammad Ali Johar
- Department
of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
| | - Mostafa Afifi Hassan
- Department
of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
| | - Indrajit V. Bagal
- Department
of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
| | - Ameer Abdullah
- Department
of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
| | - Jun-Seok Ha
- Optoelectronics
Convergence Research Center, Chonnam National
University, Gwangju 61186, Republic of Korea
| | - June Key Lee
- Optoelectronics
Convergence Research Center, Chonnam National
University, Gwangju 61186, Republic of Korea
| | - Sang-Wan Ryu
- Department
of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
- Optoelectronics
Convergence Research Center, Chonnam National
University, Gwangju 61186, Republic of Korea
| |
Collapse
|
11
|
Yuan R, Luo Q, Zhang Z, Zheng Y, Feng D, Wang D, Hu YL. Orientation-tunable In xGa 1−xN nanowires with a high density of basal stacking faults for photoelectrochemical/photocatalytic applications. CrystEngComm 2021. [DOI: 10.1039/d1ce00070e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
InxGa1−xN nanowires grew along the m-direction (A-NWs) or semipolar-direction (B-NWs) with the presence of a high density of BSFs.
Collapse
Affiliation(s)
- Ronghuo Yuan
- Fujian Provincial Key Laboratory of Functional Materials and Applications
- School of Materials Science and Engineering
- Xiamen University of Technology
- Xiamen
- P.R. China
| | - Qingyuan Luo
- TJU-NIMS International Collaboration Laboratory
- School of Materials Science and Engineering
- Tianjin University
- Tianjin
- China
| | - Zenghui Zhang
- Fujian Provincial Key Laboratory of Functional Materials and Applications
- School of Materials Science and Engineering
- Xiamen University of Technology
- Xiamen
- P.R. China
| | - Yufan Zheng
- Fujian Provincial Key Laboratory of Functional Materials and Applications
- School of Materials Science and Engineering
- Xiamen University of Technology
- Xiamen
- P.R. China
| | - Dengtang Feng
- Fujian Provincial Key Laboratory of Functional Materials and Applications
- School of Materials Science and Engineering
- Xiamen University of Technology
- Xiamen
- P.R. China
| | - Defa Wang
- TJU-NIMS International Collaboration Laboratory
- School of Materials Science and Engineering
- Tianjin University
- Tianjin
- China
| | - Yan-Ling Hu
- Fujian Provincial Key Laboratory of Functional Materials and Applications
- School of Materials Science and Engineering
- Xiamen University of Technology
- Xiamen
- P.R. China
| |
Collapse
|
12
|
Shen B, Huang L, Shen J, Meng L, Kluender EJ, Wolverton C, Tian B, Mirkin CA. Synthesis of Metal-Capped Semiconductor Nanowires from Heterodimer Nanoparticle Catalysts. J Am Chem Soc 2020; 142:18324-18329. [PMID: 33078944 DOI: 10.1021/jacs.0c09222] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Semiconductor nanowires (NWs) capped with metal nanoparticles (NPs) show multifunctional and synergistic properties, which are important for applications in the fields of catalysis, photonics, and electronics. Conventional colloidal syntheses of this class of hybrid structures require complex sequential seeded growth, where each section requires its own set of growth conditions, and methods for preparing such wires are not universal. Here, we report a new and general method for synthesizing metal-semiconductor nanohybrids based on particle catalysts, prepared by scanning probe block copolymer lithography, and chemical vapor deposition. In this process, metallic heterodimer NPs were used as catalysts for NW growth to form semiconductor NWs capped with metallic particles (Au, Ag, Co, Ni). Interestingly, the growth processes for NWs on NPs are regioselective and controlled by the chemical composition of the metallic heterodimer used. Using a systematic experimental approach, paired with density functional theory calculations, we were able to postulate three different growth modes, one without precedent.
Collapse
|
13
|
Tapia-Ruiz N, Gordon AG, Jewell CM, Edwards HK, Dunnill CW, Blackman JM, Snape CP, Brown PD, MacLaren I, Baldoni M, Besley E, Titman JJ, Gregory DH. Low dimensional nanostructures of fast ion conducting lithium nitride. Nat Commun 2020; 11:4492. [PMID: 32900996 PMCID: PMC7479578 DOI: 10.1038/s41467-020-17951-6] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/14/2018] [Accepted: 07/28/2020] [Indexed: 11/22/2022] Open
Abstract
As the only stable binary compound formed between an alkali metal and nitrogen, lithium nitride possesses remarkable properties and is a model material for energy applications involving the transport of lithium ions. Following a materials design principle drawn from broad structural analogies to hexagonal graphene and boron nitride, we demonstrate that such low dimensional structures can also be formed from an s-block element and nitrogen. Both one- and two-dimensional nanostructures of lithium nitride, Li3N, can be grown despite the absence of an equivalent van der Waals gap. Lithium-ion diffusion is enhanced compared to the bulk compound, yielding materials with exceptional ionic mobility. Li3N demonstrates the conceptual assembly of ionic inorganic nanostructures from monolayers without the requirement of a van der Waals gap. Computational studies reveal an electronic structure mediated by the number of Li-N layers, with a transition from a bulk narrow-bandgap semiconductor to a metal at the nanoscale.
Collapse
Affiliation(s)
- Nuria Tapia-Ruiz
- WestCHEM, School of Chemistry, University of Glasgow, Glasgow, G12 8QQ, UK
- Department of Chemistry, Lancaster University, Lancaster, LA1 4YB, UK
| | - Alexandra G Gordon
- School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Catherine M Jewell
- WestCHEM, School of Chemistry, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Hannah K Edwards
- School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
- Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Charles W Dunnill
- WestCHEM, School of Chemistry, University of Glasgow, Glasgow, G12 8QQ, UK
| | - James M Blackman
- Department of Chemical and Environmental Engineering, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Colin P Snape
- Department of Chemical and Environmental Engineering, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Paul D Brown
- Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Ian MacLaren
- School of Physics and Astronomy, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Matteo Baldoni
- School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
- Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Consiglio Nazionale delle Ricerche (CNR), Via P. Gobetti 101, 40129, Bologna, Italy
| | - Elena Besley
- School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Jeremy J Titman
- School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD, UK
| | - Duncan H Gregory
- WestCHEM, School of Chemistry, University of Glasgow, Glasgow, G12 8QQ, UK.
| |
Collapse
|
14
|
Johar M, Waseem A, Hassan MA, Bagal IV, Abdullah A, Ha JS, Lee JK, Ryu SW. Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate. ACS OMEGA 2020; 5:17753-17760. [PMID: 32715262 PMCID: PMC7379061 DOI: 10.1021/acsomega.0c02411] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/22/2020] [Accepted: 06/16/2020] [Indexed: 06/11/2023]
Abstract
Beryllium oxide (BeO) belongs to a very unique material family that exhibits the divergent properties of high thermal conductivity and high electrical resistivity. BeO has the same crystal structure as GaN, and the absolute difference in the lattice constants is less than 17%. Here, the growth of GaN nanowires (NWs) on the polycrystalline BeO substrate is reported for the first time. The NWs are grown by a vapor-liquid-solid approach using a showerhead-based metal-organic chemical vapor deposition. The growth direction of NWs is along the m-axis on all planes of the substrate, and it is confirmed by transmission electron microscopy (TEM) and selected area electron diffraction (SAED) patterns. The vertical and tilted growth of NWs is due to the different planes of the substrate such as the m-plane, a-plane, and semipolar planes and is confirmed by X-ray diffraction. Subsequently, the GaN shell and InGaN/GaN multiple quantum wells (MQWs) are coaxially grown using a vapor-solid approach in the same reactor. A very high crystal quality is verified by TEM and SAED and is also confirmed by measuring the photoluminescence. The optical emission is tuned for the entire visible spectrum by increasing the indium incorporation in InGaN quantum wells. The conformal growth of InGaN/GaN MQW shells and the defect-free nature of the structure are confirmed from spatially resolved cathodoluminescence. This study will provide a platform for researchers to grow GaN NWs on the BeO substrate for a range of optical and electrical applications.
Collapse
Affiliation(s)
- Muhammad
Ali Johar
- Department
of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
- Optoelectronics
Convergence Research Center, Chonnam National
University, Gwangju 61186, Republic of Korea
| | - Aadil Waseem
- Department
of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
| | - Mostafa Afifi Hassan
- Department
of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
| | - Indrajit V. Bagal
- Department
of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
| | - Ameer Abdullah
- Department
of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
| | - Jun-Seok Ha
- Optoelectronics
Convergence Research Center, Chonnam National
University, Gwangju 61186, Republic of Korea
| | - June Key Lee
- Optoelectronics
Convergence Research Center, Chonnam National
University, Gwangju 61186, Republic of Korea
| | - Sang-Wan Ryu
- Department
of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
- Optoelectronics
Convergence Research Center, Chonnam National
University, Gwangju 61186, Republic of Korea
| |
Collapse
|
15
|
Sobanska M, Zytkiewicz ZR, Klosek K, Kruszka R, Golaszewska K, Ekielski M, Gieraltowska S. Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al x O y nucleation layer. NANOTECHNOLOGY 2020; 31:184001. [PMID: 31940593 DOI: 10.1088/1361-6528/ab6bf2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Examples are presented that application of amorphous Al x O y nucleation layer is an efficient way of controlling spatial distribution of GaN nanowires grown by plasma-assisted molecular beam epitaxy. On GaN/sapphire substrates Al x O y stripes induce formation of GaN nanowires while a compact GaN layer is formed outside the stripes. We show that the ratio of nanowire length h to the thickness of the compact layer d can be tailored by adjusting impinging gallium and nitrogen fluxes. Calculations of the h/d aspect ratio were performed taking into account dependence of nanowire incubation time on the growth parameters. In agreement with calculations we found that the value of h/d ratio can be increased by increasing the N/Ga flux ratio in the way that the N-limited growth regime determines nanowire axial growth rate while growth of compact layer remains Ga-limited. This ensures the highest value of the h/d aspect ratio. Local modification of GaN growth kinetics caused by surface diffusion of Ga adatoms through the boundary separating the Al x O y stripe and the GaN/sapphire substrate is discussed. We show that during the nanowire incubation period gallium is transported out of the Al x O y stripe, which delays nanowire nucleation onset and leads to reduced length of GaN nanowires in the vicinity of the stripe edge. Simultaneously the growth on the GaN/sapphire substrate is locally enhanced, so the planar GaN layers adopts a typical edge shape of mesa structures grown by selective area growth. Ga diffusion length on a-Al x O y surface of ∼500 nm is inferred from our results.
Collapse
Affiliation(s)
- Marta Sobanska
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - Zbigniew R Zytkiewicz
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - Kamil Klosek
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - Renata Kruszka
- Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | | | - Marek Ekielski
- Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| | - Sylwia Gieraltowska
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
| |
Collapse
|
16
|
Zhang K, Abbas Y, Jan SU, Gao L, Ma Y, Mi Z, Liu X, Xuan Y, Gong JR. Selective Growth of Stacking Fault Free ⟨100⟩ Nanowires on a Polycrystalline Substrate for Energy Conversion Application. ACS APPLIED MATERIALS & INTERFACES 2020; 12:17676-17685. [PMID: 32212680 DOI: 10.1021/acsami.9b20952] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Cubic semiconductor nanowires grown along ⟨100⟩ directions have been reported to be promising for optoelectronics and energy conversion applications, owing to their pure zinc-blende structure without any stacking fault. But, until date, only limited success has been achieved in growing ⟨100⟩ oriented nanowires. Here we report the selective growth of stacking fault free ⟨100⟩ nanowires on a commercial transparent conductive polycrystalline fluorine-doped SnO2 (FTO) glass substrate via a simple and cost-effective chemical vapor deposition (CVD) method. By means of crystallographic analysis and density functional theory calculation, we prove that the orientation relationship between the Au catalyst and the FTO substrate play a vital role in inducing the selective growth of ⟨100⟩ nanowires, which opens a new pathway for controlling the growth directions of nanowires via the elaborate selection of the catalyst and substrate couples during the vapor-solid-liquid (VLS) growth process. The ZnSe nanowires grown on the FTO substrate are further applied as a photoanode in photoelectrochemical (PEC) water splitting. It exhibits a higher photocurrent than the ZnSe nanowires do without preferential orientations on a Sn-doped In2O3 (ITO) glass substrate, which we believe to be correlated with the smooth transport of charge carriers in ZnSe ⟨100⟩ nanowires with pure zinc-blende structures, in distinct contrast with the severe electron scattering happened at the stacking faults in ZnSe nanowires on the ITO substrate, as well as the efficient charge transfer across the intensively interacting nanowire-substrate interfaces.
Collapse
Affiliation(s)
- Kai Zhang
- School of Energy and Power Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P. R. China
| | - Yasir Abbas
- Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchy Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Saad Ullah Jan
- Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchy Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| | - Lei Gao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Yuan Ma
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Zhishan Mi
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Xianglei Liu
- School of Energy and Power Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P. R. China
| | - Yimin Xuan
- School of Energy and Power Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P. R. China
| | - Jian Ru Gong
- Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchy Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
| |
Collapse
|
17
|
Zhang C, Liu X, Li J, Zhang X, Yang W, Jin X, Liu F, Yao J, Jiang X, Liu B. Investigation of catalyst-assisted growth of nonpolar GaN nanowires via a modified HVPE process. NANOSCALE 2020; 12:4393-4399. [PMID: 32025692 DOI: 10.1039/c9nr09781c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The growth of nonpolar GaN nanowires along the [101[combining macron]0] orientation has been demonstrated via a modified hydride vapor phase epitaxy (HVPE) process using GaCl3 and NH3 as precursors. The morphology and structure evolution as a dependence of the growth parameters was thoroughly studied to elucidate the nucleation and crystallization of nonpolar GaN nanowires. It has been found that the V/III ratio and temperature are critically important for the formation of high-quality nonpolar GaN nanowires. The existence of a cubic GaN (c-GaN) transition layer between the Au catalyst and hexagonal GaN (h-GaN) nonpolar nanowires was demonstrated by high-resolution transmission electron microscopy (HRTEM) characterization, which plays an important role in the initial nucleation of nonpolar GaN nanowires and the formation of stacking faults (SFs) in the GaN nanowires grown at lower temperature. Optical investigations show that the defect-related visible emission of nonpolar GaN nanowires is closely related to the growth process and can be selectively tailored. The synthetic strategy using GaCl3 as the Ga precursor to study the vapor phase epitaxy process in this work will provide a simple and efficient approach to obtain nonpolar GaN nanowires and will thus pave a solid way for fundamental research on high-quality nonpolar GaN nanowires in optoelectronic nanodevices.
Collapse
Affiliation(s)
- Cai Zhang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China. and School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang, China
| | - Xiaoyuan Liu
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
| | - Jing Li
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
| | - Xinglai Zhang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
| | - Wenjing Yang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
| | - Xin Jin
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
| | - Fei Liu
- State Key Laboratory of Optoelectronic Materials and Technologies and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Jinlei Yao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, China
| | - Xin Jiang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
| | - Baodan Liu
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
| |
Collapse
|
18
|
Mariano R, Yau A, McKeown JT, Kumar M, Kanan MW. Comparing Scanning Electron Microscope and Transmission Electron Microscope Grain Mapping Techniques Applied to Well-Defined and Highly Irregular Nanoparticles. ACS OMEGA 2020; 5:2791-2799. [PMID: 32095702 PMCID: PMC7033971 DOI: 10.1021/acsomega.9b03505] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2019] [Accepted: 01/27/2020] [Indexed: 06/10/2023]
Abstract
Investigating how grain structure affects the functional properties of nanoparticles requires a robust method for nanoscale grain mapping. In this study, we directly compare the grain mapping ability of transmission Kikuchi diffraction (TKD) in a scanning electron microscope to automated crystal orientation mapping (ACOM) in a transmission electron microscope across multiple nanoparticle materials. Analysis of well-defined Au, ZnO, and ZnSe nanoparticles showed that the grain orientations and GB geometries obtained by TKD are accurate and match those obtained by ACOM. For more complex polycrystalline Cu nanostructures, TKD provided an interpretable grain map whereas ACOM, with or without precession electron diffraction, yielded speckled, uninterpretable maps with orientation errors. Acquisition times for TKD were generally shorter than those for ACOM. Our results validate the use of TKD for characterizing grain orientation and grain boundary distributions in nanoparticles, providing a framework for the broader exploration of how microstructure influences nanoparticle properties.
Collapse
Affiliation(s)
- Ruperto
G. Mariano
- Department
of Chemistry, Stanford University, Stanford, California 94305, United States
| | - Allison Yau
- Department
of Chemistry, Stanford University, Stanford, California 94305, United States
| | - Joseph T. McKeown
- Materials
Science Division, Lawrence Livermore National
Laboratory, Livermore, California 94550, United States
| | - Mukul Kumar
- Materials
Engineering Division, Lawrence Livermore
National Laboratory, Livermore, California 94550, United States
| | - Matthew W. Kanan
- Department
of Chemistry, Stanford University, Stanford, California 94305, United States
| |
Collapse
|
19
|
Waseem A, Johar MA, Hassan MA, Bagal IV, Ha JS, Lee JK, Ryu SW. Enhanced stability of piezoelectric nanogenerator based on GaN/V 2O 5 core-shell nanowires with capacitive contact. NANOTECHNOLOGY 2020. [PMID: 31675751 DOI: 10.1016/j.nanoen.2019.03.075] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2023]
Abstract
Enhanced stability of a piezoelectric nanogenerator (PNG) was demonstrated using c- and m-axis GaN/V2O5 core-shell nanowires (NWs) by analyzing the capacitive coupling of the PNG's output. The NW array grown on GaN thin film was embedded in polydimethylsiloxane (PDMS) matrix, following which the matrix was transferred to an indium (In)-coated PET substrate for achieving superior flexibility of the PNG. The stability of the PNG was enhanced by holding the NW PDMS composite with a PDMS polymer as a bonding material on the PET substrate. The inserted PDMS layer improved the lifetime of the PNG, however, because of the insulating nature of PDMS, the piezoelectric output of GaN NWs was coupled capacitively to In contact on PET substrate and it resulted in a slight degradation of piezoelectric output due to the voltage drop across the bottom capacitive contact. The maximum piezoelectric current was 64 nA and output voltage was 11.9 V from the PNG with c-axis NWs. While the PNG with direct bottom contact exhibited 57% output reduction after 72 000 operation cycles, the PNG with capacitive contact did not show any degradation in stability even after 150 000 cycles.
Collapse
Affiliation(s)
- Aadil Waseem
- Department of Physics, Chonnam National University, Gwangju 61186, Republic of Korea
| | | | | | | | | | | | | |
Collapse
|
20
|
Blumberg C, Häuser P, Wefers F, Jansen D, Tegude FJ, Weimann N, Prost W. A systematic study of Ga- and N-polar GaN nanowire–shell growth by metal organic vapor phase epitaxy. CrystEngComm 2020. [DOI: 10.1039/d0ce00693a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
N-polar and Ga-polar (0001) GaN core–shell wires detached from an AlN/Si(111) growth template. Different facets have been identified, limiting the vertical shell growth extension, modelled by varying surface terminations and different H-passivation.
Collapse
Affiliation(s)
- Christian Blumberg
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| | - Patrick Häuser
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| | - Fabian Wefers
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| | - Dennis Jansen
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| | - Franz-Josef Tegude
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| | - Nils Weimann
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| | - Werner Prost
- Dept. Components for High Frequency Electronics
- University of Duisburg-Essen
- 47057 Duisburg
- Germany
| |
Collapse
|
21
|
Jin B, Shao C, Wang Y, Mu Z, Liu Z, Tang R. Anisotropic Epitaxial Behavior in the Amorphous Phase-Mediated Hydroxyapatite Crystallization Process: A New Understanding of Orientation Control. J Phys Chem Lett 2019; 10:7611-7616. [PMID: 31749366 DOI: 10.1021/acs.jpclett.9b03109] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The precise control of crystallization is a key in the construction and engineering of crystalline materials, especially in biomineralization. Although it is generally accepted that biomineral crystals have evolved from their amorphous precursors, there are intense debates about crystallographic orientation control. By using in situ high-resolution transmission electron microscopy, we herein reveal that hydroxyapatite (HAP) is produced through its epitaxial growth from amorphous calcium phosphate with a preferential c-axis orientation. Abnormally but interestingly, this anisotropic epitaxial crystallization priority along the c-axis is not affected by the existing HAP crystalline substrate, which is exactly the same on either {002} or {100} facets. Molecular dynamics simulations suggest this preference is correlated with the interfacial energetic controls at the amorphous-crystalline transition frontier. The orientation control of biominerals here shows the key role of the interface energy, rather that the organic molecules or matrices, which provides a complementary understanding of the general c-axis orientation control of HAP in various biomineralization cases and aids in the development of an alternative strategy for crystallization control of functional materials.
Collapse
Affiliation(s)
| | | | - Yanming Wang
- Department of Materials Science and Engineering , Massachusetts Institute of Technology , 77 Massachusetts Avenue , Cambridge , Massachusetts 02139 , United States
| | | | | | | |
Collapse
|
22
|
Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 78] [Impact Index Per Article: 15.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
Collapse
Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| |
Collapse
|
23
|
Zhao D, Huang H, Chen S, Li Z, Li S, Wang M, Zhu H, Chen X. In Situ Growth of Leakage-Free Direct-Bridging GaN Nanowires: Application to Gas Sensors for Long-Term Stability, Low Power Consumption, and Sub-ppb Detection Limit. NANO LETTERS 2019; 19:3448-3456. [PMID: 31030517 DOI: 10.1021/acs.nanolett.8b04846] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Direct-bridge growth of aligned GaN nanowires (NWs) over the trench of GaN-coated sapphire substrate was realized in which the issues of parasitic deposition and resultant bypass current were resolved by combining the novel shadowing effect of the deep trench with the surface-passivation effect of the SiO2 coating. Due to the robust connection and the absence of a contact barrier in bridging NWs, the intrinsic sensing properties of the NW itself can be obtained. For the first time, the gas-sensing properties (e.g., NO2) of the bridging GaN NWs were studied. With the assistance of UV light, the detection limit was improved from 4.5 to 0.5 ppb at room temperature, and the corresponding response time was reduced from 518 to 18 s. This kind of sensor is promising for high sensitivity (detection of less than parts per billion), low power consumption (capable of room-temperature operation), high stability (variation in resistance of <0.8% during 240 days), and in situ monolithic integration.
Collapse
Affiliation(s)
- Danna Zhao
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Hui Huang
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Shunji Chen
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Zhirui Li
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Shida Li
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Mengyuan Wang
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Huichao Zhu
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Xiaoming Chen
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering , Dalian University of Technology , Dalian 116024 , China
| |
Collapse
|
24
|
Ben-Zvi R, Burrows H, Schvartzman M, Bitton O, Pinkas I, Kaplan-Ashiri I, Brontvein O, Joselevich E. In-Plane Nanowires with Arbitrary Shapes on Amorphous Substrates by Artificial Epitaxy. ACS NANO 2019; 13:5572-5582. [PMID: 30995393 PMCID: PMC6994061 DOI: 10.1021/acsnano.9b00538] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/21/2019] [Accepted: 04/17/2019] [Indexed: 06/09/2023]
Abstract
The challenge of nanowire assembly is still one of the major obstacles toward their efficient integration into functional systems. One strategy to overcome this obstacle is the guided growth approach, in which the growth of in-plane nanowires is guided by epitaxial and graphoepitaxial relations with the substrate to yield dense arrays of aligned nanowires. This method relies on crystalline substrates which are generally expensive and incompatible with silicon-based technologies. In this work, we expand the guided growth approach into noncrystalline substrates and demonstrate the guided growth of horizontal nanowires along straight and arbitrarily shaped amorphous nanolithographic open guides on silicon wafers. Nanoimprint lithography is used as a high-throughput method for the fabrication of the high-resolution guiding features. We first grow five different semiconductor materials (GaN, ZnSe, CdS, ZnTe, and ZnO) along straight ridges and trenches, demonstrating the generality of this method. Through crystallographic analysis we find that despite the absence of any epitaxial relations with the substrate, the nanowires grow as single crystals in preferred crystallographic orientations. To further expand the guided growth approach beyond straight nanowires, GaN and ZnSe were grown also along curved and kinked configurations to form different shapes, including sinusoidal and zigzag-shaped nanowires. Photoluminescence and cathodoluminescence were used as noninvasive tools to characterize the sine wave-shaped nanowires. We discuss the similarities and differences between in-plane nanowires grown by epitaxy/graphoepitaxy and artificial epitaxy in terms of generality, morphology, crystallinity, and optical properties.
Collapse
Affiliation(s)
- Regev Ben-Zvi
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Hadassah Burrows
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Mark Schvartzman
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Ora Bitton
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Iddo Pinkas
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Ifat Kaplan-Ashiri
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Olga Brontvein
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Ernesto Joselevich
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| |
Collapse
|
25
|
Han S, Lee SK, Choi I, Song J, Lee CR, Kim K, Ryu MY, Jeong KU, Kim JS. Highly Efficient and Flexible Photosensors with GaN Nanowires Horizontally Embedded in a Graphene Sandwich Channel. ACS APPLIED MATERIALS & INTERFACES 2018; 10:38173-38182. [PMID: 30360044 DOI: 10.1021/acsami.8b11229] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In this study, we report highly efficient and flexible photosensors with GaN nanowires (NWs) horizontally embedded in a graphene sandwich structure fabricated on polyethylene terephthalate. GaN NWs and the graphene sandwich structure are used as light-absorbing media and the channel for carrier movement, respectively. To form uniform high-quality crystalline GaN NWs on Si(111) substrates, the initial nucleation behavior of the NWs was manipulated by applying the new growth technique of Ga predeposition. High-resolution transmission electron microscopic images obtained along the vertical direction of GaN NWs showed that stacking faults, typically observed in Si-based (In,Ga)As NWs, were rare. Consequently, narrow and strong optical emission was observed from the GaN NWs at wavelengths of 365.12 nm at 300 K. The photocurrent and photoresponsivity of the flexible photosensor with 802 nm long GaN NWs horizontally embedded in the graphene sandwich channel were measured as 9.17 mA and 91.70 A/W, respectively, at the light intensity of 100 mW/cm2, which are much higher than those previously reported. The high optical-to-electrical conversion characteristics of our flexible photosensors are attributed to the increase in the effective interface between the light-absorbing media and the carrier channel by the horizontal distribution of the GaN NWs within the graphene sandwich structure. After 200 cyclic-bending test of the GaN NW photosensor at the strain of 3%, the photoresponsivity under strain was measured as 89.04 A/W at 100 mW/cm2, corresponding to 97.1% of the photoresponsivity obtained before bending. The photosensor proposed in this study is relatively simple in device design and fabrication, and it requires no sophisticated nanostructural design to minimize the resistance to metal contacts.
Collapse
Affiliation(s)
| | - Seoung-Ki Lee
- Applied Quantum Composites Research Center , Korea Institute of Science and Technology , Wanju 55324 , South Korea
| | | | | | | | - Kangmin Kim
- Applied Quantum Composites Research Center , Korea Institute of Science and Technology , Wanju 55324 , South Korea
| | - Mee-Yi Ryu
- Department of Physics , Kangwon National University , Chuncheon 24341 , South Korea
| | | | | |
Collapse
|
26
|
Wu S, Wang L, Yi X, Liu Z, Yan J, Yuan G, Wei T, Wang J, Li J. Crystallographic orientation control and optical properties of GaN nanowires. RSC Adv 2018; 8:2181-2187. [PMID: 35542617 PMCID: PMC9077256 DOI: 10.1039/c7ra11408g] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2017] [Accepted: 01/01/2018] [Indexed: 11/21/2022] Open
Abstract
The optical and electrical properties of nitride materials are closely related to their crystallographic orientation. Here, we report our effort on crystallographic orientation manipulation of GaN NWs using vapour–liquid–solid hydride vapour phase epitaxy (VLS-HVPE). The growth orientations of the GaN NWs are tuned from the polar c-axis to the non-polar m-axis by simply varying the supply of III precursors on various substrates, including c-, r, m-plane sapphire, (111) silicon and (0001) GaN. By varying the size of the Ni/Au catalyst, we found that the catalyst size has a negligible influence on the growth orientation of GaN NWs. All these demonstrate that the growth orientation of the GaN NWs is dominated by the flow rate of the precursor, regardless of the catalyst size and the substrate adopted. Moreover, the optical properties of GaN NWs were characterized using micro-photoluminescence, revealing that the observed red luminescence band (near 660 nm) is related to the lateral growth of the GaN NWs. The work presented here will advance the understanding of the VLS process of GaN NWs and represents a step forward towards controllable GaN NW growth. We employ a versatile strategy to manipulate the crystallographic orientation of GaN NWs in a VLS-HVPE process.![]()
Collapse
Affiliation(s)
- Shaoteng Wu
- College of Materials Sciences and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
- Research and Development Center for Semiconductor Lighting
| | - Liancheng Wang
- Institute of Semiconductors
- Chinese Academy of Sciences
- Beijing 100083
- China
- State Key Laboratory of High Performance Complex Manufacturing
| | - Xiaoyan Yi
- College of Materials Sciences and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
- Research and Development Center for Semiconductor Lighting
| | - Zhiqiang Liu
- College of Materials Sciences and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
- Research and Development Center for Semiconductor Lighting
| | - Jianchang Yan
- College of Materials Sciences and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
- Research and Development Center for Semiconductor Lighting
| | - Guodong Yuan
- College of Materials Sciences and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
- Research and Development Center for Semiconductor Lighting
| | - Tongbo Wei
- College of Materials Sciences and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
- Research and Development Center for Semiconductor Lighting
| | - Junxi Wang
- College of Materials Sciences and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
- Research and Development Center for Semiconductor Lighting
| | - Jinmin Li
- College of Materials Sciences and Opto-Electronic Technology
- University of Chinese Academy of Sciences
- Beijing
- China
- Research and Development Center for Semiconductor Lighting
| |
Collapse
|
27
|
Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon. Sci Rep 2017; 7:17942. [PMID: 29263368 PMCID: PMC5738410 DOI: 10.1038/s41598-017-17980-0] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2017] [Accepted: 12/04/2017] [Indexed: 11/25/2022] Open
Abstract
We report single crystalline gallium nitride nanowire growth from Ni and Ni-Au catalysts on silicon using hydride vapor phase epitaxy. The growth takes place rapidly; efficiency in time is higher than the conventional nanowire growth in metal-organic chemical vapor deposition and thin film growth in molecular beam epitaxy. The effects of V/III ratio and carrier gas flow on growth are discussed regarding surface polarity and sticking coefficient of molecules. The nanowires of gallium nitride exhibit excellent crystallinity with smooth and straight morphology and uniform orientation. The growth mechanism follows self-assembly from both catalysts, where Au acts as a protection from etching during growth enabling the growth of ultra-long nanowires. The photoluminescence of such nanowires are adjustable by tuning the growth parameters to achieve blue emission. The practical range of parameters for mass production of such high crystal quality and uniformity of nanowires is suggested.
Collapse
|
28
|
Whiticar AM, Mårtensson EK, Nygård J, Dick KA, Bolinsson J. Annealing of Au, Ag and Au-Ag alloy nanoparticle arrays on GaAs (100) and (111)B. NANOTECHNOLOGY 2017; 28:205702. [PMID: 28445163 DOI: 10.1088/1361-6528/aa6aef] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Metal nanoparticles (NPs), in particular gold NPs, are often used in the fabrication process of semiconductor nanowires. Besides being able to induce the 1D crystallization of new material, it is highly beneficial if the NPs can be used to dictate the position and diameter of the final nanowire structure. To achieve well-defined NP arrays of varying diameter and pitch distances for nanowire growth, it is necessary to understand and control the effect that a pre-growth annealing process may have on the pre-defined NP arrays. Recently, it has been demonstrated that silver (Ag) may be an alternative to using gold (Au) NPs as seed for particle-seeded nanowire fabrication. This work brings light onto the effect of annealing of Au, Ag and Au-Ag alloy metal NP arrays in two commonly used epitaxial systems, the molecular beam epitaxy (MBE) and the metalorganic vapor phase epitaxy (MOVPE). The metal NP arrays are fabricated with the aid of electron beam lithography on GaAs 100 and 111B wafers and the evolution of the NPs with respect to shape, size and position on the surfaces is studied after annealing using scanning electron microscopy. We find that while the Au NP arrays are found to be stable when annealed up to 600 °C in a MOVPE system, a diameter and pitch dependent splitting of the particles is seen for annealing in a MBE system. The Ag NP arrays are found to be less stable, with smaller diameters (≤50 nm) dissolving during the annealing process in both epitaxial systems. In general, the mobility of the NPs is observed to differ between the two the GaAs 100 and 111B surfaces. Finally, our observations on the effect of annealing on Au-Ag alloy NP arrays suggest that these NP can withstand necessary annealing conditions for a complete de-oxidation of GaAs surfaces in both MOVPE and MBE.
Collapse
Affiliation(s)
- Alexander M Whiticar
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark
| | | | | | | | | |
Collapse
|
29
|
Liu Q, Liu B, Yang W, Yang B, Zhang X, Labbé C, Portier X, An V, Jiang X. Alignment control and atomically-scaled heteroepitaxial interface study of GaN nanowires. NANOSCALE 2017; 9:5212-5221. [PMID: 28397937 DOI: 10.1039/c7nr00032d] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.
Collapse
Affiliation(s)
- Qingyun Liu
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang 110016, China.
| | | | | | | | | | | | | | | | | |
Collapse
|
30
|
Dahiya AS, Opoku C, Poulin-Vittrant G, Camara N, Daumont C, Barbagiovanni EG, Franzò G, Mirabella S, Alquier D. Flexible Organic/Inorganic Hybrid Field-Effect Transistors with High Performance and Operational Stability. ACS APPLIED MATERIALS & INTERFACES 2017; 9:573-584. [PMID: 28001361 DOI: 10.1021/acsami.6b13472] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The production of high-quality semiconducting nanostructures with optimized electrical, optical, and electromechanical properties is important for the advancement of next-generation technologies. In this context, we herein report on highly obliquely aligned single-crystalline zinc oxide nanosheets (ZnO NSs) grown via the vapor-liquid-solid approach using r-plane (01-12) sapphire as the template surface. The high structural and optical quality of as-grown ZnO NSs has been confirmed using high-resolution transmission electron microscopy and temperature-dependent photoluminescence, respectively. To assess the potential of our NSs as effective building materials in high-performance flexible electronics, we fabricate organic (parylene C)/inorganic (ZnO NS) hybrid field-effect transistor (FET) devices on flexible substrates using room-temperature assembly processes. Extraction of key FET performance parameters suggests that as-grown ZnO NSs can successfully function as excellent n-type semiconducting modules. Such devices are found to consistently show very high on-state currents (Ion) > 40 μA, high field-effect mobility (μeff) > 200 cm2/(V s), exceptionally high on/off current modulation ratio (Ion/off) of around 109, steep subthreshold swing (s-s) < 200 mV/decade, very low hysteresis, and negligible threshold voltage shifts with prolonged electrical stressing (up to 340 min). The present study delivers a concept of integrating high-quality ZnO NS as active semiconducting elements in flexible electronic circuits.
Collapse
Affiliation(s)
- Abhishek S Dahiya
- Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France
| | - Charles Opoku
- Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France
| | - Guylaine Poulin-Vittrant
- Université François Rabelais de Tours, INSA-CVL, CNRS, GREMAN UMR 7347 , 3 rue de la Chocolaterie, CS 23410, 41034 Cedex Blois, France
| | - Nicolas Camara
- Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France
| | - Christophe Daumont
- Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France
| | - Eric G Barbagiovanni
- MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita' di Catania , via S. Sofia 64, 95123 Catania, Italy
| | - Giorgia Franzò
- MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita' di Catania , via S. Sofia 64, 95123 Catania, Italy
| | - Salvo Mirabella
- MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita' di Catania , via S. Sofia 64, 95123 Catania, Italy
| | - Daniel Alquier
- Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France
| |
Collapse
|
31
|
Zhao D, Huang H, Lv R, Chen S, Guang Q, Zong Y, Liu Z, Li X. Controlled growth of aligned GaN nanostructures: from nanowires and needles to micro-rods on a single substrate. RSC Adv 2017. [DOI: 10.1039/c7ra09813h] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Growth of aligned GaN nanostructures by tuning the substrate distance and the growth pressure.
Collapse
Affiliation(s)
- Danna Zhao
- Department of Electronic Science and Technology
- Faculty of Electronic Information and Electrical Engineering
- Dalian University of Technology
- Dalian 116024
- China
| | - Hui Huang
- Department of Electronic Science and Technology
- Faculty of Electronic Information and Electrical Engineering
- Dalian University of Technology
- Dalian 116024
- China
| | - Rui Lv
- Department of Electronic Science and Technology
- Faculty of Electronic Information and Electrical Engineering
- Dalian University of Technology
- Dalian 116024
- China
| | - Shunji Chen
- Department of Electronic Science and Technology
- Faculty of Electronic Information and Electrical Engineering
- Dalian University of Technology
- Dalian 116024
- China
| | - Qiyilan Guang
- Department of Electronic Science and Technology
- Faculty of Electronic Information and Electrical Engineering
- Dalian University of Technology
- Dalian 116024
- China
| | - Yang Zong
- Department of Electronic Science and Technology
- Faculty of Electronic Information and Electrical Engineering
- Dalian University of Technology
- Dalian 116024
- China
| | - Zhe Liu
- Department of Electronic Science and Technology
- Faculty of Electronic Information and Electrical Engineering
- Dalian University of Technology
- Dalian 116024
- China
| | - Xiqing Li
- Department of Electronic Science and Technology
- Faculty of Electronic Information and Electrical Engineering
- Dalian University of Technology
- Dalian 116024
- China
| |
Collapse
|
32
|
Zong Y, Huang H, Song W, Lv R, Zhao D, Liu Z, Guang Q, Guo J, Tang Z. Growth of oriented GaN nanowires by controlling nucleation conditions. CRYSTAL RESEARCH AND TECHNOLOGY 2016. [DOI: 10.1002/crat.201600263] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Yang Zong
- Department of Electronic and Engineering; Dalian Neusoft University of Information; 116023 Dalian P. R. China
| | - Hui Huang
- Department of Electronic Science and Technology; Faculty of Electronic Information and Electrical Engineering; Dalian University of Technology; Dalian 116024 P. R. China
| | - Wenbin Song
- Department of Electronic and Engineering; Dalian Neusoft University of Information; 116023 Dalian P. R. China
| | - Rui Lv
- Department of Electronic Science and Technology; Faculty of Electronic Information and Electrical Engineering; Dalian University of Technology; Dalian 116024 P. R. China
| | - Danna Zhao
- Department of Electronic Science and Technology; Faculty of Electronic Information and Electrical Engineering; Dalian University of Technology; Dalian 116024 P. R. China
| | - Zhe Liu
- Department of Electronic Science and Technology; Faculty of Electronic Information and Electrical Engineering; Dalian University of Technology; Dalian 116024 P. R. China
| | - Qiyilan Guang
- Department of Electronic Science and Technology; Faculty of Electronic Information and Electrical Engineering; Dalian University of Technology; Dalian 116024 P. R. China
| | - Jingwei Guo
- Department of Electronic and Communication Engineering; Yanshan University; Qinhuangdao 066004 P. R. China
| | - Zhenan Tang
- Department of Electronic Science and Technology; Faculty of Electronic Information and Electrical Engineering; Dalian University of Technology; Dalian 116024 P. R. China
| |
Collapse
|
33
|
Liu H, Zhang H, Dong L, Zhang Y, Pan C. Growth of GaN micro/nanolaser arrays by chemical vapor deposition. NANOTECHNOLOGY 2016; 27:355201. [PMID: 27454350 DOI: 10.1088/0957-4484/27/35/355201] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ∼1 μm and a length of ∼15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm(-2). The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.
Collapse
Affiliation(s)
- Haitao Liu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST), Beijing, 100083, People's Republic of China. Department of Physics and Laboratory of Materials Physic, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | | | | | | | | |
Collapse
|
34
|
Huang X, Yu Y, Jones T, Fan H, Wang L, Xia J, Wang ZJ, Shao LD, Meng XM, Willinger MG. In Situ Formation of Crystallographically Oriented Semiconductor Nanowire Arrays via Selective Vaporization for Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:7603-7612. [PMID: 27373221 DOI: 10.1002/adma.201602867] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2016] [Indexed: 06/06/2023]
Abstract
Direct transformation of bulk crystals to single-crystalline crystallographically oriented semiconductor nanowire arrays is presented. Real-time imaging during in situ environmental scanning electron microscopy experiment clearly demonstrates that the nanowire arrays form through a selective vaporization process with respect to the crystallography of wurtzite crystals. Due to the high quality of the prepared semiconductor nanowire arrays, photodetectors constructed from them can present superior optoelectronic performances.
Collapse
Affiliation(s)
- Xing Huang
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.
- Fritz Haber Institute of Max Planck Society, Faradayweg 4-6, 14195, Berlin, Germany.
| | - Yongqiang Yu
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, 230009, P. R. China
| | - Travis Jones
- Fritz Haber Institute of Max Planck Society, Faradayweg 4-6, 14195, Berlin, Germany
| | - Hua Fan
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China
| | - Lei Wang
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China
| | - Jing Xia
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China
| | - Zhu-Jun Wang
- Fritz Haber Institute of Max Planck Society, Faradayweg 4-6, 14195, Berlin, Germany
| | - Li-Dong Shao
- Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, 200090, Shanghai, P. R. China
| | - Xiang-Min Meng
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.
| | - Marc-Georg Willinger
- Fritz Haber Institute of Max Planck Society, Faradayweg 4-6, 14195, Berlin, Germany.
| |
Collapse
|
35
|
Kolíbal M, Pejchal T, Vystavěl T, Šikola T. The Synergic Effect of Atomic Hydrogen Adsorption and Catalyst Spreading on Ge Nanowire Growth Orientation and Kinking. NANO LETTERS 2016; 16:4880-4886. [PMID: 27458789 DOI: 10.1021/acs.nanolett.6b01352] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Hydride precursors are commonly used for semiconductor nanowire growth from the vapor phase and hydrogen is quite often used as a carrier gas. Here, we used in situ scanning electron microscopy and spatially resolved Auger spectroscopy to reveal the essential role of atomic hydrogen in determining the growth direction of Ge nanowires with an Au catalyst. With hydrogen passivating nanowire sidewalls the formation of inclined facets is suppressed, which stabilizes the growth in the ⟨111⟩ direction. By contrast, without hydrogen gold diffuses out of the catalyst and decorates the nanowire sidewalls, which strongly affects the surface free energy of the system and results in the ⟨110⟩ oriented growth. The experiments with intentional nanowire kinking reveal the existence of an energetic barrier, which originates from the kinetic force needed to drive the droplet out of its optimum configuration on top of a nanowire. Our results stress the role of the catalyst material and surface chemistry in determining the nanowire growth direction and provide additional insights into a kinking mechanism, thus allowing to inhibit or to intentionally initiate spontaneous kinking.
Collapse
Affiliation(s)
- Miroslav Kolíbal
- Institute of Physical Engineering, Brno University of Technology , Technická 2, 616 69 Brno, Czech Republic
- CEITEC BUT, Brno University of Technology , Purkyňova 123, 616 69 Brno, Czech Republic
| | - Tomáš Pejchal
- CEITEC BUT, Brno University of Technology , Purkyňova 123, 616 69 Brno, Czech Republic
| | - Tomáš Vystavěl
- FEI Company, Vlastimila Pecha 1282/12, 627 00 Brno, Czech Republic
| | - Tomáš Šikola
- Institute of Physical Engineering, Brno University of Technology , Technická 2, 616 69 Brno, Czech Republic
- CEITEC BUT, Brno University of Technology , Purkyňova 123, 616 69 Brno, Czech Republic
| |
Collapse
|
36
|
Gamalski AD, Tersoff J, Stach EA. Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires. NANO LETTERS 2016; 16:2283-8. [PMID: 26990711 DOI: 10.1021/acs.nanolett.5b04650] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
We study the growth of GaN nanowires from liquid Au-Ga catalysts using environmental transmission electron microscopy. GaN wires grow in either ⟨112̅0⟩ or ⟨11̅00⟩ directions, by the addition of {11̅00} double bilayers via step flow with multiple steps. Step-train growth is not typically seen with liquid catalysts, and we suggest that it results from low step mobility related to the unusual double-height step structure. The results here illustrate the surprising dynamics of catalytic GaN wire growth at the nanoscale and highlight striking differences between the growth of GaN and other III-V semiconductor nanowires.
Collapse
Affiliation(s)
- A D Gamalski
- Center for Functional Nanomaterials, Brookhaven National Laboratory , Upton, New York 11973, United States
| | - J Tersoff
- IBM Research Division, T. J. Watson Research Center , Yorktown Heights, New York 10598, United States
| | - E A Stach
- Center for Functional Nanomaterials, Brookhaven National Laboratory , Upton, New York 11973, United States
| |
Collapse
|
37
|
|
38
|
Wu Z, Shen X, Liu C, Li K, Shen W, Kang J, Fang Z. In situ asymmetric island sidewall growth of high-quality semipolar (112̄2) GaN on m-plane sapphire. CrystEngComm 2016. [DOI: 10.1039/c6ce00878j] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
|
39
|
Ebaid M, Kang JH, Yoo YS, Lim SH, Cho YH, Ryu SW. Vertically aligned InGaN nanowires with engineered axial In composition for highly efficient visible light emission. Sci Rep 2015; 5:17003. [PMID: 26585509 PMCID: PMC4653627 DOI: 10.1038/srep17003] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2015] [Accepted: 10/22/2015] [Indexed: 11/23/2022] Open
Abstract
We report on the fabrication of novel InGaN nanowires (NWs) with improved crystalline quality and high radiative efficiency for applications as nanoscale visible light emitters. Pristine InGaN NWs grown under a uniform In/Ga molar flow ratio (UIF) exhibited multi-peak white-like emission and a high density of dislocation-like defects. A phase separation and broad emission with non-uniform luminescent clusters were also observed for a single UIF NW investigated by spatially resolved cathodoluminescence. Hence, we proposed a simple approach based on engineering the axial In content by increasing the In/Ga molar flow ratio at the end of NW growth. This new approach yielded samples with a high luminescence intensity, a narrow emission spectrum, and enhanced crystalline quality. Using time-resolved photoluminescence spectroscopy, the UIF NWs exhibited a long radiative recombination time (τr) and low internal quantum efficiency (IQE) due to strong exciton localization and carrier trapping in defect states. In contrast, NWs with engineered In content demonstrated three times higher IQE and a much shorter τr due to mitigated In fluctuation and improved crystal quality.
Collapse
Affiliation(s)
- Mohamed Ebaid
- Department of Physics, Chonnam National University, Gwangju 500-757, Republic of Korea.,Department of Physics, Faculty of Science, Beni-Suef University, Beni-Suef 62511, Egypt
| | - Jin-Ho Kang
- Department of Physics, Chonnam National University, Gwangju 500-757, Republic of Korea
| | - Yang-Seok Yoo
- Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
| | - Seung-Hyuk Lim
- Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
| | - Yong-Hoon Cho
- Department of Physics and KI for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea
| | - Sang-Wan Ryu
- Department of Physics, Chonnam National University, Gwangju 500-757, Republic of Korea
| |
Collapse
|
40
|
Sarwar ATMG, Carnevale SD, Yang F, Kent TF, Jamison JJ, McComb DW, Myers RC. Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2015; 11:5402-5408. [PMID: 26307552 DOI: 10.1002/smll.201501909] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2015] [Revised: 07/17/2015] [Indexed: 06/04/2023]
Abstract
Bottom-up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light-emitting diodes (LEDs), lasers, solar cells, and sensors. However, expensive single crystalline substrates are commonly used as substrates for nanowire heterostructures as well as for epitaxial devices, which limits the manufacturability of nanowire devices. Here, nanowire LEDs directly grown and electrically integrated on metal are demonstrated. Optical and structural measurements reveal high-quality, vertically aligned GaN nanowires on molybdenum and titanium films. Transmission electron microscopy confirms the composition variation in the polarization-graded AlGaN nanowire LEDs. Blue to green electroluminescence is observed from InGaN quantum well active regions, while GaN active regions exhibit ultraviolet emission. These results demonstrate a pathway for large-scale fabrication of solid state lighting and optoelectronics on metal foils or sheets.
Collapse
Affiliation(s)
- A T M Golam Sarwar
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, 43210, USA
| | - Santino D Carnevale
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, 43210, USA
| | - Fan Yang
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, 43210, USA
| | - Thomas F Kent
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, 43210, USA
| | - John J Jamison
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, 43210, USA
| | - David W McComb
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, 43210, USA
| | - Roberto C Myers
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, 43210, USA
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, 43210, USA
| |
Collapse
|
41
|
Kuykendall TR, Schwartzberg AM, Aloni S. Gallium Nitride Nanowires and Heterostructures: Toward Color-Tunable and White-Light Sources. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:5805-5812. [PMID: 26032973 DOI: 10.1002/adma.201500522] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2015] [Revised: 03/23/2015] [Indexed: 06/04/2023]
Abstract
Gallium-nitride-based light-emitting diodes have enabled the commercialization of efficient solid-state lighting devices. Nonplanar nanomaterial architectures, such as nanowires and nanowire-based heterostructures, have the potential to significantly improve the performance of light-emitting devices through defect reduction, strain relaxation, and increased junction area. In addition, relaxation of internal strain caused by indium incorporation will facilitate pushing the emission wavelength into the red. This could eliminate inefficient phosphor conversion and enable color-tunable emission or white-light emission by combining blue, green, and red sources. Utilizing the waveguiding modes of the individual nanowires will further enhance light emission, and the properties of photonic structures formed by nanowire arrays can be implemented to improve light extraction. Recent advances in synthetic methods leading to better control over GaN and InGaN nanowire synthesis are described along with new concept devices leading to efficient white-light emission.
Collapse
Affiliation(s)
- Tevye R Kuykendall
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Adam M Schwartzberg
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Shaul Aloni
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| |
Collapse
|
42
|
Ogletree DF, Schuck PJ, Weber-Bargioni AF, Borys NJ, Aloni S, Bao W, Barja S, Lee J, Melli M, Munechika K, Whitelam S, Wickenburg S. Revealing Optical Properties of Reduced-Dimensionality Materials at Relevant Length Scales. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:5693-5719. [PMID: 26332202 DOI: 10.1002/adma.201500930] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2015] [Revised: 05/26/2015] [Indexed: 06/05/2023]
Abstract
Reduced-dimensionality materials for photonic and optoelectronic applications including energy conversion, solid-state lighting, sensing, and information technology are undergoing rapid development. The search for novel materials based on reduced-dimensionality is driven by new physics. Understanding and optimizing material properties requires characterization at the relevant length scale, which is often below the diffraction limit. Three important material systems are chosen for review here, all of which are under investigation at the Molecular Foundry, to illustrate the current state of the art in nanoscale optical characterization: 2D semiconducting transition metal dichalcogenides; 1D semiconducting nanowires; and energy-transfer in assemblies of 0D semiconducting nanocrystals. For each system, the key optical properties, the principal experimental techniques, and important recent results are discussed. Applications and new developments in near-field optical microscopy and spectroscopy, scanning probe microscopy, and cathodoluminescence in the electron microscope are given detailed attention. Work done at the Molecular Foundry is placed in context within the fields under review. A discussion of emerging opportunities and directions for the future closes the review.
Collapse
Affiliation(s)
- D Frank Ogletree
- Molecular Foundry, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - P James Schuck
- Molecular Foundry, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - Alexander F Weber-Bargioni
- Molecular Foundry, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - Nicholas J Borys
- Molecular Foundry, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - Shaul Aloni
- Molecular Foundry, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - Wei Bao
- Molecular Foundry, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
- Materials Science and Engineering, University of California, Berkeley, California, 94720, USA
| | - Sara Barja
- Molecular Foundry, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - Jiye Lee
- Molecular Foundry, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - Mauro Melli
- Molecular Foundry, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - Keiko Munechika
- Molecular Foundry, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - Stephan Whitelam
- Molecular Foundry, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| | - Sebastian Wickenburg
- Molecular Foundry, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, USA
| |
Collapse
|