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For: Zhang F, Appenzeller J. Tunability of short-channel effects in MoS2 field-effect devices. Nano Lett 2015;15:301-306. [PMID: 25545046 DOI: 10.1021/nl503586v] [Citation(s) in RCA: 37] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Number Cited by Other Article(s)
1
Wang H, Guo H, Guzman R, JiaziLa N, Wu K, Wang A, Liu X, Liu L, Wu L, Chen J, Huan Q, Zhou W, Yang H, Pantelides ST, Bao L, Gao HJ. Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024;36:e2311652. [PMID: 38502781 DOI: 10.1002/adma.202311652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2023] [Revised: 02/29/2024] [Indexed: 03/21/2024]
2
Cao X, Yan S, Li Z, Fang Z, Wang L, Liu X, Chen Z, Lei H, Zhang X. Broadband Photodetector Based on FePS3/WS2 van der Waals Type II Heterostructure. J Phys Chem Lett 2023;14:11529-11535. [PMID: 38091371 DOI: 10.1021/acs.jpclett.3c03198] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
3
Thoutam LR, Mathew R, Ajayan J, Tayal S, Nair SV. A critical review of fabrication challenges and reliability issues in top/bottom gated MoS2field-effect transistors. NANOTECHNOLOGY 2023;34:232001. [PMID: 36731113 DOI: 10.1088/1361-6528/acb826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Accepted: 02/02/2023] [Indexed: 06/18/2023]
4
Kim JY, Ju X, Ang KW, Chi D. Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook. ACS NANO 2023;17:1831-1844. [PMID: 36655854 DOI: 10.1021/acsnano.2c10737] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
5
Sun Y, Jiang L, Wang Z, Hou Z, Dai L, Wang Y, Zhao J, Xie YH, Zhao L, Jiang Z, Ren W, Niu G. Multiwavelength High-Detectivity MoS2 Photodetectors with Schottky Contacts. ACS NANO 2022;16:20272-20280. [PMID: 36508482 DOI: 10.1021/acsnano.2c06062] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
6
Wei T, Han Z, Zhong X, Xiao Q, Liu T, Xiang D. Two dimensional semiconducting materials for ultimately scaled transistors. iScience 2022;25:105160. [PMID: 36204270 PMCID: PMC9529977 DOI: 10.1016/j.isci.2022.105160] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]  Open
7
Ngo TD, Choi MS, Lee M, Ali F, Hassan Y, Ali N, Liu S, Lee C, Hone J, Yoo WJ. Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022;9:e2202465. [PMID: 35853245 PMCID: PMC9475546 DOI: 10.1002/advs.202202465] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/28/2022] [Revised: 06/01/2022] [Indexed: 05/22/2023]
8
Liu X, Choi MS, Hwang E, Yoo WJ, Sun J. Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022;34:e2108425. [PMID: 34913205 DOI: 10.1002/adma.202108425] [Citation(s) in RCA: 56] [Impact Index Per Article: 28.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2021] [Revised: 11/29/2021] [Indexed: 06/14/2023]
9
Kim J, Jung M, Lim DU, Rhee D, Jung SH, Cho HK, Kim HK, Cho JH, Kang J. Area-Selective Chemical Doping on Solution-Processed MoS2 Thin-Film for Multi-Valued Logic Gates. NANO LETTERS 2022;22:570-577. [PMID: 34779637 DOI: 10.1021/acs.nanolett.1c02947] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
10
Zhang H, pei M, Liu B, Wang Z, Zhao X. Structure and electronic properties of MoSe2/PtS2 van der Waals heterostructure. Phys Chem Chem Phys 2022;24:19853-19864. [DOI: 10.1039/d2cp02559k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
11
Xiong R, Hu R, Zhang Y, Yang X, Lin P, Wen C, Sa B, Sun Z. Computational discovery of PtS2/GaSe van der Waals heterostructure for solar energy applications. Phys Chem Chem Phys 2021;23:20163-20173. [PMID: 34551041 DOI: 10.1039/d1cp02436a] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
12
Enhanced Electrical Performance of Monolayer MoS2 with Rare Earth Element Sm Doping. NANOMATERIALS 2021;11:nano11030769. [PMID: 33803612 PMCID: PMC8002856 DOI: 10.3390/nano11030769] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2021] [Revised: 03/09/2021] [Accepted: 03/16/2021] [Indexed: 11/17/2022]
13
Seol M, Lee MH, Kim H, Shin KW, Cho Y, Jeon I, Jeong M, Lee HI, Park J, Shin HJ. High-Throughput Growth of Wafer-Scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripening. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020;32:e2003542. [PMID: 32935911 DOI: 10.1002/adma.202003542] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2020] [Revised: 08/03/2020] [Indexed: 05/13/2023]
14
Zou X, Liu L, Xu J, Wang H, Tang WM. Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm. ACS APPLIED MATERIALS & INTERFACES 2020;12:32943-32950. [PMID: 32610894 DOI: 10.1021/acsami.0c09060] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
15
Ohoka T, Nouchi R. Staircase-like transfer characteristics in multilayer MoS2 field-effect transistors. NANO EXPRESS 2020. [DOI: 10.1088/2632-959x/ab70e6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
16
Li H, Wang R, Han S, Zhou Y. Ferroelectric polymers for non‐volatile memory devices: a review. POLYM INT 2020. [DOI: 10.1002/pi.5980] [Citation(s) in RCA: 31] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
17
Lee I, Kim JN, Kang WT, Shin YS, Lee BH, Yu WJ. Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects. ACS APPLIED MATERIALS & INTERFACES 2020;12:2854-2861. [PMID: 31855598 DOI: 10.1021/acsami.9b18577] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
18
Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD. NANOMATERIALS 2019;9:nano9091209. [PMID: 31462000 PMCID: PMC6780524 DOI: 10.3390/nano9091209] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/25/2019] [Revised: 08/13/2019] [Accepted: 08/22/2019] [Indexed: 11/17/2022]
19
Bi K, Liu H, Chen Y, Luo F, Shu Z, Lin J, Liu S, Liu H, Zeng Z, Dai P, Zhu M, Duan H. Short channel monolayer MoS2 field-effect transistors defined by SiO x nanofins down to 20 nm. NANOTECHNOLOGY 2019;30:295301. [PMID: 30917350 DOI: 10.1088/1361-6528/ab13cc] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
20
Tong SW, Medina H, Liao W, Wu J, Wu W, Chai J, Yang M, Abutaha A, Wang S, Zhu C, Hippalgaonkar K, Chi D. Employing a Bifunctional Molybdate Precursor To Grow the Highly Crystalline MoS2 for High-Performance Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2019;11:14239-14248. [PMID: 30920198 DOI: 10.1021/acsami.9b01444] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
21
Ultimate limit in size and performance of WSe2 vertical diodes. Nat Commun 2018;9:5371. [PMID: 30560877 PMCID: PMC6299081 DOI: 10.1038/s41467-018-07820-8] [Citation(s) in RCA: 44] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2018] [Accepted: 11/21/2018] [Indexed: 11/08/2022]  Open
22
Liu X, Liang R, Gao G, Pan C, Jiang C, Xu Q, Luo J, Zou X, Yang Z, Liao L, Wang ZL. MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018;30:e1800932. [PMID: 29782679 DOI: 10.1002/adma.201800932] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2018] [Revised: 03/31/2018] [Indexed: 06/08/2023]
23
Gao Y, Lei S, Kang T, Fei L, Mak CL, Yuan J, Zhang M, Li S, Bao Q, Zeng Z, Wang Z, Gu H, Zhang K. Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors. NANOTECHNOLOGY 2018;29:244001. [PMID: 29582784 DOI: 10.1088/1361-6528/aab9d2] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
24
Sangwan VK, Hersam MC. Electronic Transport in Two-Dimensional Materials. Annu Rev Phys Chem 2018;69:299-325. [DOI: 10.1146/annurev-physchem-050317-021353] [Citation(s) in RCA: 156] [Impact Index Per Article: 26.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
25
Prakash A, Ilatikhameneh H, Wu P, Appenzeller J. Understanding contact gating in Schottky barrier transistors from 2D channels. Sci Rep 2017;7:12596. [PMID: 28974712 PMCID: PMC5626721 DOI: 10.1038/s41598-017-12816-3] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2017] [Accepted: 09/14/2017] [Indexed: 11/09/2022]  Open
26
Wang F, Wang Z, Jiang C, Yin L, Cheng R, Zhan X, Xu K, Wang F, Zhang Y, He J. Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017;13:1604298. [PMID: 28594452 DOI: 10.1002/smll.201604298] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2016] [Revised: 02/13/2017] [Indexed: 06/07/2023]
27
Dobusch L, Schuler S, Perebeinos V, Mueller T. Thermal Light Emission from Monolayer MoS2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017. [PMID: 28628254 DOI: 10.1002/adma.201701304] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
28
Xu J, Chen L, Dai YW, Cao Q, Sun QQ, Ding SJ, Zhu H, Zhang DW. A two-dimensional semiconductor transistor with boosted gate control and sensing ability. SCIENCE ADVANCES 2017;3:e1602246. [PMID: 28560330 PMCID: PMC5438220 DOI: 10.1126/sciadv.1602246] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2016] [Accepted: 03/16/2017] [Indexed: 05/23/2023]
29
Li F, Qi J, Xu M, Xiao J, Xu Y, Zhang X, Liu S, Zhang Y. Layer Dependence and Light Tuning Surface Potential of 2D MoS2 on Various Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017;13:1603103. [PMID: 28092427 DOI: 10.1002/smll.201603103] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2016] [Revised: 11/30/2016] [Indexed: 05/23/2023]
30
Xu K, Chen D, Yang F, Wang Z, Yin L, Wang F, Cheng R, Liu K, Xiong J, Liu Q, He J. Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors. NANO LETTERS 2017;17:1065-1070. [PMID: 28092953 DOI: 10.1021/acs.nanolett.6b04576] [Citation(s) in RCA: 75] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
31
Song JG, Kim SJ, Woo WJ, Kim Y, Oh IK, Ryu GH, Lee Z, Lim JH, Park J, Kim H. Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor. ACS APPLIED MATERIALS & INTERFACES 2016;8:28130-28135. [PMID: 27681666 DOI: 10.1021/acsami.6b07271] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
32
Azcatl A, Qin X, Prakash A, Zhang C, Cheng L, Wang Q, Lu N, Kim MJ, Kim J, Cho K, Addou R, Hinkle CL, Appenzeller J, Wallace RM. Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure. NANO LETTERS 2016;16:5437-43. [PMID: 27494551 DOI: 10.1021/acs.nanolett.6b01853] [Citation(s) in RCA: 139] [Impact Index Per Article: 17.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
33
Nakaharai S, Yamamoto M, Ueno K, Tsukagoshi K. Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning. ACS APPLIED MATERIALS & INTERFACES 2016;8:14732-14739. [PMID: 27203118 DOI: 10.1021/acsami.6b02036] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
34
Xu K, Huang Y, Chen B, Xia Y, Lei W, Wang Z, Wang Q, Wang F, Yin L, He J. Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2016;12:3106-3111. [PMID: 27120487 DOI: 10.1002/smll.201600521] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/17/2016] [Revised: 03/16/2016] [Indexed: 06/05/2023]
35
Huang W, Gan L, Li H, Ma Y, Zhai T. 2D layered group IIIA metal chalcogenides: synthesis, properties and applications in electronics and optoelectronics. CrystEngComm 2016. [DOI: 10.1039/c5ce01986a] [Citation(s) in RCA: 143] [Impact Index Per Article: 17.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
36
Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model. Nat Commun 2015;6:8948. [PMID: 26563458 PMCID: PMC4660372 DOI: 10.1038/ncomms9948] [Citation(s) in RCA: 54] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2015] [Accepted: 10/20/2015] [Indexed: 12/22/2022]  Open
37
He G, Ghosh K, Singisetti U, Ramamoorthy H, Somphonsane R, Bohra G, Matsunaga M, Higuchi A, Aoki N, Najmaei S, Gong Y, Zhang X, Vajtai R, Ajayan PM, Bird JP. Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation. NANO LETTERS 2015;15:5052-8. [PMID: 26121164 DOI: 10.1021/acs.nanolett.5b01159] [Citation(s) in RCA: 41] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
38
Wang F, Wang Z, Wang Q, Wang F, Yin L, Xu K, Huang Y, He J. Synthesis, properties and applications of 2D non-graphene materials. NANOTECHNOLOGY 2015;26:292001. [PMID: 26134271 DOI: 10.1088/0957-4484/26/29/292001] [Citation(s) in RCA: 32] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
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