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Torun I, Huang C, Kiremitler NB, Kalay M, Shim M, Onses MS. Coffee-Ring Mediated Thinning and Thickness-Dependent Dewetting Modes in Printed Polymer Droplets Coupled with Assembly of Quantum Dots for Anti-Counterfeiting. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2405429. [PMID: 39077934 DOI: 10.1002/smll.202405429] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2024] [Indexed: 07/31/2024]
Abstract
Molecular transport processes in printed polymer droplets hold enormous importance for understanding wetting phenomena and designing systems in applications such as encoding, electronics, photonics, and sensing. This paper studies thickness-dependent dewetting modes that are activated by thermal annealing and driven by interfacial interactions within microscopically confined polymeric features. The printing of poly(2-vinylpyridine) is performed in a regime where coffee-ring effects lead to strong thinning of the central region of the deposit. Thermal annealing leads to two different modes of dewetting that depend on the thickness of the central region. Mode I refers to the formation of randomly positioned small features surrounded by large hemispherical ones located along the periphery of the printed features and occurs when the central regions are thin. Observed at large central thicknesses, Mode II mediates significant molecular transport from edges toward the center of the printed droplet with thermal annealing and forms a hemispherical feature from the initial ring-like deposit. The selective adsorption of red, green, and blue emitting quantum dots over the poly(2-vinylpyridine) results in photoluminescent patterns. The selective assembly of photoluminescent quantum dots over patterned surfaces leads to deterministic and stochastic features beneficial to creating security labels for anti-counterfeiting applications.
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Affiliation(s)
- Ilker Torun
- Department of Materials Science and Engineering, Erciyes University, Kayseri, 38039, Turkey
- ERNAM - Nanotechnology Application and Research Center, Erciyes University, Kayseri, 38039, Turkey
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - Conan Huang
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - N Burak Kiremitler
- Department of Materials Science and Engineering, Erciyes University, Kayseri, 38039, Turkey
- ERNAM - Nanotechnology Application and Research Center, Erciyes University, Kayseri, 38039, Turkey
| | - Mustafa Kalay
- Department of Electricity and Energy, Kayseri University, Kayseri, 38039, Turkey
| | - Moonsub Shim
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - Mustafa Serdar Onses
- Department of Materials Science and Engineering, Erciyes University, Kayseri, 38039, Turkey
- ERNAM - Nanotechnology Application and Research Center, Erciyes University, Kayseri, 38039, Turkey
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2
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Lee J, Jo H, Choi M, Park S, Oh J, Lee K, Bae Y, Rhee S, Roh J. Recent Progress on Quantum Dot Patterning Technologies for Commercialization of QD-LEDs: Current Status, Future Prospects, and Exploratory Approaches. SMALL METHODS 2024; 8:e2301224. [PMID: 38193264 DOI: 10.1002/smtd.202301224] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 11/25/2023] [Indexed: 01/10/2024]
Abstract
Colloidal quantum dots (QDs) are widely regarded as advanced emissive materials with significant potential for display applications owing to their excellent optical properties such as high color purity, near-unity photoluminescence quantum yield, and size-tunable emission color. Building upon these attractive attributes, QDs have successfully garnered attention in the display market as down-conversion luminophores and now venturing into the realm of self-emissive displays, exemplified by QD light-emitting diodes (QD-LEDs). However, despite these advancements, there remains a relatively limited body of research on QD patterning technologies, which are crucial prerequisites for the successful commercialization of QD-LEDs. Thus, in this review, an overview of the current status and prospects of QD patterning technologies to accelerate the commercialization of QD-LEDs is provided. Within this review, a comprehensive investigation of three prevailing patterning methods: optical lithography, transfer printing, and inkjet printing are conducted. Furthermore, several exploratory QD patterning techniques that offer distinct advantages are introduced. This study not only paves the way for successful commercialization but also extends the potential application of QD-LEDs into uncharted frontiers.
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Affiliation(s)
- Jaeyeop Lee
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Hyeona Jo
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Minseok Choi
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Sangwook Park
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Jiyoon Oh
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Kyoungeun Lee
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Yeyun Bae
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Seunghyun Rhee
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
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3
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Bae J, Yoo C, Yoon SY, Seol SK, Pyo J. Emission Directionality of 3D-Printed Photonic Nanowires. ACS NANO 2024; 18:16265-16273. [PMID: 38864726 DOI: 10.1021/acsnano.4c02820] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2024]
Abstract
Photonic devices can be advanced by increasing the density of the integrated optical components. As the integration density increases, the potential for signal interference between adjacent components, optical crosstalk, becomes a concern. To address the crosstalk issue, it is crucial to identify the emission directionality of the integrated optical components. In this study, we investigate the emission directionality of 3D printed light-emitting nano/microwires. We experimentally and numerically showed that when the diameter is reduced below the single-mode cutoff, the emission becomes noticeably directional. In addition, our demonstrations on pairs of closely positioned wires show that optical crosstalk can be effectively avoided by reducing the diameter to the nanoscale to exploit the strong directionality of its emission. We expect that our study can be applied to various fundamental research and applications in the fields of photonics, optical communication, sensing, and imaging, where the directionality of the emissions is crucial.
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Affiliation(s)
- Jongcheon Bae
- Smart 3D Printing Research Team, Korea Electrotechnology Research Institute (KERI), Changwon 51543, Korea
- School of Materials Science and Engineering, Pusan National University, Busan 46241, Korea
| | - Chanbin Yoo
- Smart 3D Printing Research Team, Korea Electrotechnology Research Institute (KERI), Changwon 51543, Korea
- Electric Energy & Materials Engineering, KERI School, University of Science and Technology (UST), Changwon 51543, Korea
| | - Seog-Young Yoon
- School of Materials Science and Engineering, Pusan National University, Busan 46241, Korea
| | - Seung Kwon Seol
- Smart 3D Printing Research Team, Korea Electrotechnology Research Institute (KERI), Changwon 51543, Korea
- Electric Energy & Materials Engineering, KERI School, University of Science and Technology (UST), Changwon 51543, Korea
| | - Jaeyeon Pyo
- Smart 3D Printing Research Team, Korea Electrotechnology Research Institute (KERI), Changwon 51543, Korea
- Electric Energy & Materials Engineering, KERI School, University of Science and Technology (UST), Changwon 51543, Korea
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4
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Jao YM, Huang BM, Chang C, Lin FZ, Lee GY, Huang CP, Kuo HC, Shih MH, Lin CC. A Colloidal-Quantum-Dot Integrated U-Shape Micro-Light-Emitting-Diode and Its Photonic Characteristics. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:938. [PMID: 38869563 PMCID: PMC11173848 DOI: 10.3390/nano14110938] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2024] [Revised: 04/26/2024] [Accepted: 05/17/2024] [Indexed: 06/14/2024]
Abstract
A special micro LED whose light emitting area is laid out in a U-like shape is fabricated and integrated with colloidal quantum dots (CQDs). An inkjet-type machine directly dispenses the CQD layer to the central courtyard-like area of this U-shape micro LED. The blue photons emitted by the U-shape mesa with InGaN/GaN quantum wells can excite the CQDs at the central courtyard area and be converted into green or red ones. The U-shape micro LEDs are coated with Al2O3 by an atomic layer deposition system and exhibit moderate external quantum efficiency (6.51% max.) and high surface recombination because of their long peripheries. Low-temperature measurement also confirms the recovery of the external quantum efficiency due to lower non-radiative recombination from the exposed surfaces. The color conversion efficiency brought by the CQD layer can be as high as 33.90%. A further continuous CQD aging test, which was evaluated by the strength of the CQD emission, under current densities of 100 A/cm2 and 200 A/cm2 injected into the micro LED, showed a lifetime extension of the unprotected CQD emission up to 1321 min in the U-shape device compared to a 39 min lifetime in the traditional case, where the same CQD layer was placed on the top surface of a squared LED.
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Affiliation(s)
- Yu-Ming Jao
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan; (Y.-M.J.); (B.-M.H.); (C.C.)
| | - Bo-Ming Huang
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan; (Y.-M.J.); (B.-M.H.); (C.C.)
| | - Ching Chang
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan; (Y.-M.J.); (B.-M.H.); (C.C.)
| | - Fang-Zhong Lin
- Institute of Lighting and Energy Photonics, College of Photonics, National Yang Ming Chiao Tung University, Tainan City 71150, Taiwan; (F.-Z.L.); (G.-Y.L.)
| | - Guan-Ying Lee
- Institute of Lighting and Energy Photonics, College of Photonics, National Yang Ming Chiao Tung University, Tainan City 71150, Taiwan; (F.-Z.L.); (G.-Y.L.)
| | - Chung-Ping Huang
- Graduate Program of College of Photonics, College of Photonics, National Yang Ming Chiao Tung University, Tainan City 71150, Taiwan;
| | - Hao-Chung Kuo
- Department of Photonics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
- Semiconductor Research Center, Hon-Hai Research Institute, Taipei 114699, Taiwan
| | - Min-Hsiung Shih
- Research Center for Applied Sciences, Academia Sinica, Taipei 115201, Taiwan;
| | - Chien-Chung Lin
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan; (Y.-M.J.); (B.-M.H.); (C.C.)
- Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
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5
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Jeong M, Ko B, Jung C, Kim J, Jang J, Mun J, Lee J, Yun S, Kim S, Rho J. Printable Light-Emitting Metasurfaces with Enhanced Directional Photoluminescence. NANO LETTERS 2024; 24:5783-5790. [PMID: 38695397 DOI: 10.1021/acs.nanolett.4c00871] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2024]
Abstract
Nanoimprint lithography is gaining popularity as a cost-efficient way to reproduce nanostructures in large quantities. Recent advances in nanoimprinting lithography using high-index nanoparticles have demonstrated replication of photonic devices, but it is difficult to confer special properties on nanostructures beyond general metasurfaces. Here, we introduce a novel method for fabricating light-emitting metasurfaces using nanoimprinting lithography. By utilizing quantum dots embedded in resin, we successfully imprint dielectric metasurfaces that function simultaneously as both emitters and resonators. This approach to incorporating quantum dots into metasurfaces demonstrates an improvement in photoluminescence characteristics compared to the situation where quantum dots and metasurfaces are independently incorporated. Design of the metasurface is specifically tailored to support photonic modes within the emission band of quantum dots with a large enhancement of photoluminescence. This study indicates that nanoimprinting lithography has the capability to construct nanostructures using functionalized nanoparticles and could be used in various fields of nanophotonic applications.
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Affiliation(s)
- Minsu Jeong
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Byoungsu Ko
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Chunghwan Jung
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jaekyung Kim
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jaehyuck Jang
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- POSCO-POSTECH-RIST Convergence Research Centre for Flat Optics and Metaphotonics, Pohang 37673, Republic of Korea
| | - Jungho Mun
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- POSCO-POSTECH-RIST Convergence Research Centre for Flat Optics and Metaphotonics, Pohang 37673, Republic of Korea
| | - Jihae Lee
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Suhyeon Yun
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Sejeong Kim
- Department of Electrical and Electronic Engineering, University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Junsuk Rho
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- POSCO-POSTECH-RIST Convergence Research Centre for Flat Optics and Metaphotonics, Pohang 37673, Republic of Korea
- National Institute of Nanomaterials Technology (NINT), Pohang 37673, Republic of Korea
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6
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Kim J, Roh J, Park M, Lee C. Recent Advances and Challenges of Colloidal Quantum Dot Light-Emitting Diodes for Display Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2212220. [PMID: 36853911 DOI: 10.1002/adma.202212220] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Revised: 02/21/2023] [Indexed: 06/18/2023]
Abstract
Colloidal quantum dots (QDs) exhibit tremendous potential in display technologies owing to their unique optical properties, such as size-tunable emission wavelength, narrow spectral linewidth, and near-unity photoluminescence quantum yield. Significant efforts in academia and industry have achieved dramatic improvements in the performance of quantum dot light-emitting diodes (QLEDs) over the past decade, primarily owing to the development of high-quality QDs and optimized device architectures. Moreover, sophisticated patterning processes have also been developed for QDs, which is an essential technique for their commercialization. As a result of these achievements, some QD-based display technologies, such as QD enhancement films and QD-organic light-emitting diodes, have been successfully commercialized, confirming the superiority of QDs in display technologies. However, despite these developments, the commercialization of QLEDs is yet to reach a threshold, requiring a leap forward in addressing challenges and related problems. Thus, representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication method to specify the current status and development direction are reviewed. Furthermore, brief insights into the factors to be considered when conducting research on single-device QLEDs are provided to realize active matrix displays. This review guides the way toward the commercialization of QLEDs.
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Affiliation(s)
- Jaehoon Kim
- Department of Energy and Mineral Resources Engineering, Dong-A University, Busan, 49315, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Myoungjin Park
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
| | - Changhee Lee
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
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7
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Cho TH, Farjam N, Barton K, Dasgupta NP. Subtractive Patterning of Nanoscale Thin Films Using Acid-Based Electrohydrodynamic-Jet Printing. SMALL METHODS 2024; 8:e2301407. [PMID: 38161264 DOI: 10.1002/smtd.202301407] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2023] [Revised: 12/16/2023] [Indexed: 01/03/2024]
Abstract
As an alternative to traditional photolithography, printing processes are widely explored for the patterning of customizable devices. However, to date, the majority of high-resolution printing processes for functional nanomaterials are additive in nature. To complement additive printing, there is a need for subtractive processes, where the printed ink results in material removal, rather than addition. In this study, a new subtractive patterning approach that uses electrohydrodynamic-jet (e-jet) printing of acid-based inks to etch nanoscale zinc oxide (ZnO) thin films deposited using atomic layer deposition (ALD) is introduced. By tuning the printing parameters, the depth and linewidth of the subtracted features can be tuned, with a minimum linewidth of 11 µm and a tunable channel depth with ≈5 nm resolution. Furthermore, by tuning the ink composition, the volatility and viscosity of the ink can be adjusted, resulting in variable spreading and dissolution dynamics at the solution/film interface. In the future, acid-based subtractive patterning using e-jet printing can be used for rapid prototyping or customizable manufacturing of functional devices on a range of substrates with nanoscale precision.
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Affiliation(s)
- Tae H Cho
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan, 48109, USA
| | - Nazanin Farjam
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan, 48109, USA
| | - Kira Barton
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan, 48109, USA
- Department of Robotics, University of Michigan, Ann Arbor, Michigan, 48109, USA
| | - Neil P Dasgupta
- Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan, 48109, USA
- Department of Materials Science & Engineering, University of Michigan, Ann Arbor, Michigan, 48109, USA
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8
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Yang K, Weng X, Feng J, Yu Y, Xu B, Lin Q, Zhang Q, Zhuang J, Hou W, Yan X, Hu H, Li F. High-Resolution Quantum Dot Light-Emitting Diodes by Electrohydrodynamic Printing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9544-9550. [PMID: 38346935 DOI: 10.1021/acsami.3c18371] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
Quantum dot light-emitting diodes (QLEDs) have attracted increasing attention due to their excellent electroluminescent properties and compatibility with inkjet printing processes, which show great potential in applications of pixelated displays. However, the relatively low resolution of the inkjet printing technology limits its further development. In this paper, high-resolution QLEDs were successfully fabricated by electrohydrodynamic (EHD) printing. A pixelated quantum dot (QD) emission layer was formed by printing an insulating Teflon mesh on a spin-coated QD layer. The patterned QLEDs show a high resolution of 2540 pixels per inch (PPI), with a maximum external quantum efficiency (EQE) of 20.29% and brightness of 35816 cd/m2. To further demonstrate its potential in full-color display, the fabrication process for the QD layer was changed from spin-coating to EHD printing. The as-printed Teflon effectively blocked direct contact between the hole transport layer and the electron transport layer, thus preventing leakage currents. As a result, the device showed a resolution of 1692 PPI with a maximum EQE of 15.40%. To the best of our knowledge, these results represent the highest resolution and efficiency of pixelated QLEDs using inkjet printing or EHD printing, which demonstrates its huge potential in the application of high-resolution full-color displays.
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Affiliation(s)
- Kaiyu Yang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
| | - Xukeng Weng
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Jiahuan Feng
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
| | - Yongshen Yu
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
| | - Baolin Xu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Qiuxiang Lin
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Qingkai Zhang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
| | - Jiaqing Zhuang
- National Center of Technology Innovation for Display, Guangzhou 510525, People's Republic of China
| | - Wenjun Hou
- TCL Research, Shenzhen 518057, People's Republic of China
| | - Xiaolin Yan
- TCL Research, Shenzhen 518057, People's Republic of China
| | - Hailong Hu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
| | - Fushan Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, People's Republic of China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, People's Republic of China
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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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10
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Torun I, Huang C, Kalay M, Shim M, Onses MS. pH Tunable Patterning of Quantum Dots. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305237. [PMID: 37658505 DOI: 10.1002/smll.202305237] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Revised: 08/17/2023] [Indexed: 09/03/2023]
Abstract
Patterning of quantum dots (QDs) is essential for many, especially high-tech, applications. Here, pH tunable assembly of QDs over functional patterns prepared by electrohydrodynamic jet printing of poly(2-vinylpyridine) is presented. The selective adsorption of QDs from water dispersions is mediated by the electrostatic interaction between the ligand composed of 3-mercaptopropionic acid and patterned poly(2-vinylpyridine). The pH of the dispersion provides tunability at two levels. First, the adsorption density of QDs and fluorescence from the patterns can be modulated for pH > ≈4. Second, patterned features show unique type of disintegration resulting in randomly positioned features within areas defined by the printing for pH ≤ ≈4. The first capability is useful for deterministic patterning of QDs, whereas the second one enables hierarchically structured encoding of information by generating stochastic features of QDs within areas defined by the printing. This second capability is exploited for generating addressable security labels based on unclonable features. Through image analysis and feature matching algorithms, it is demonstrated that such patterns are unclonable in nature and provide a suitable platform for anti-counterfeiting applications. Collectively, the presented approach not only enables effective patterning of QDs, but also establishes key guidelines for addressable assembly of colloidal nanomaterials.
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Affiliation(s)
- Ilker Torun
- Department of Materials Science and Engineering, Nanotechnology Research Center (ERNAM), Erciyes University, Kayseri, 38039, Turkey
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - Conan Huang
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - Mustafa Kalay
- Nanotechnology Research Center (ERNAM), Erciyes University, Kayseri, 38039, Turkey
- Department of Electricity and Energy, Kayseri University, Kayseri, 38039, Turkey
| | - Moonsub Shim
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - M Serdar Onses
- Department of Materials Science and Engineering, Nanotechnology Research Center (ERNAM), Erciyes University, Kayseri, 38039, Turkey
- UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
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11
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Zou S, Li Y, Gong Z. Wafer-scale patterning of high-resolution quantum dot films with a thickness over 10 μm for improved color conversion. NANOSCALE 2023; 15:18317-18327. [PMID: 37921020 DOI: 10.1039/d3nr04615j] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/04/2023]
Abstract
Quantum dots (QDs) are promising color conversion materials for efficient full-color micro light-emitting diode (micro-LED) displays owing to their high color purity and wide color gamut. However, achieving high-resolution QD patterns with enough thickness for efficient color conversion is challenging. Here, we demonstrate a facile and compatible approach by combining replicate molding, plasma etching and transfer printing to produce QD patterns with a sufficient thickness over ten micrometers in a wide range of resolutions. Our technique can remarkably simplify the preparation of QD inks and minimize optical damage to QD materials. The pixel resolution and thickness of QD patterns can be controlled by well-defining the microstructures of the molding template and the etching process. The transfer printing process allows QD patterns to be assembled sequentially onto a receiving substrate, which will further improve the original pixel resolution and avoid repetitive optical damage to QDs during the patterning process. Consequently, various QD patterns can be fabricated in this work, including perovskite quantum dot (PQD) patterns with a pixel resolution of up to 669 pixels per inch (ppi) and a maximum thickness of up to 19.74 μm, a wafer-scale high-resolution PQD pattern with sufficient thickness on a flexible substrate, and a dual-color pattern comprising green PQDs and red CdSe QDs. Furthermore, these fabricated QD films with a thickness of over 10 μm show improved color conversion when integrated onto a blue micro-LED, revealing the potential of our technique for full-color micro-LED displays.
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Affiliation(s)
- Shenghan Zou
- Institute of Semiconductors, Guangdong Academy of Sciences, No. 363 Changxing Road, Tianhe District, Guangzhou 510650, China.
| | - Yuzhi Li
- Institute of Semiconductors, Guangdong Academy of Sciences, No. 363 Changxing Road, Tianhe District, Guangzhou 510650, China.
| | - Zheng Gong
- Institute of Semiconductors, Guangdong Academy of Sciences, No. 363 Changxing Road, Tianhe District, Guangzhou 510650, China.
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12
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Hu S, Huan X, Yang J, Cui H, Gao W, Liu Y, Yu SF, Shum HC, Kim JT. Three-Dimensionally Printed, Vertical Full-Color Display Pixels for Multiplexed Anticounterfeiting. NANO LETTERS 2023; 23:9953-9962. [PMID: 37871156 DOI: 10.1021/acs.nanolett.3c02916] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2023]
Abstract
Information encryption strategies have become increasingly essential. Most of the fluorescent security patterns have been made with a lateral configuration of red, green, and blue subpixels, limiting the pixel density and security level. Here we report vertically stacked, luminescent heterojunction micropixels that construct high-resolution, multiplexed anticounterfeiting labels. This is enabled by meniscus-guided three-dimensional (3D) microprinting of red, green, and blue (RGB) dye-doped materials. High-precision vertical stacking of subpixel segments achieves full-color pixels without sacrificing lateral resolution, achieving a small pixel size of ∼μm and a high density of over 13,000 pixels per inch. Furthermore, a full-scale color synthesis for individual pixels is developed by modulating the lengths of the RGB subpixels. Taking advantage of these unique 3D structural designs, trichannel multiplexed anticounterfeiting Quick Response codes are successfully demonstrated. We expect that this work will advance data encryption technology while also providing a versatile manufacturing platform for diverse 3D display devices.
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Affiliation(s)
- Shiqi Hu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
| | - Xiao Huan
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
| | - Jihyuk Yang
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
| | - Huanqing Cui
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
| | - Wei Gao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Yu Liu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
| | - Siu Fung Yu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
| | - Ho Cheung Shum
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
| | - Ji Tae Kim
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, China
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13
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Ball P. Printing with a quantum dot matrix. NATURE MATERIALS 2023; 22:1276. [PMID: 37891267 DOI: 10.1038/s41563-023-01717-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/29/2023]
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14
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Li X, Liang J, Xiao J, Zhu L, Wang H, Sun L, Zhang F, Zhang Y, Yin P, Chen L, Wang D. Flexible Patterned Electrohydrodynamic Jet Printing Using Orthogonal Deflection Electrodes. ACS APPLIED MATERIALS & INTERFACES 2023; 15:46300-46310. [PMID: 37733925 DOI: 10.1021/acsami.3c08769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/23/2023]
Abstract
Electrohydrodynamic jet (E-Jet) printing technology provides unmatched advantages in the fabrication of patterned micro/nanostructures. However, the rapid jets generated during printing can lead to localized droplet accumulation on complex structures due to the relatively slow motion control achieved with motorized translation stages, resulting in distorted patterns. To address this challenge, we introduce two jet-deflecting electrodes orthogonally placed on each other, which can rapidly change the electric field in the vicinity of the jet and thus flexibly adjust the flight trajectory of the fast jet to avoid the region where droplets have been deposited. In this way, the jet droplets are precisely controlled to generate high-fidelity microstructures with arbitrary predefined patterns on the stationary substrate. The maximum deflection distance of the jet droplets reaches several hundred microns. Furthermore, the positioning error of the printed structure is less than 3%. Moreover, we successfully obtained a diverse range of complex patterns by combining this technique with stage motion. This innovative printing technology not only enables the fabrication of complex patterned structures with high fidelity but also opens up exciting possibilities for new applications that require complete control of fast droplet positioning.
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Affiliation(s)
- Xiaojian Li
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024, China
| | - Junsheng Liang
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province and State Key Laboratory of High-performance Precision Manufacturing, Dalian University of Technology, Dalian 116024, China
| | - Jianping Xiao
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024, China
| | - Long Zhu
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024, China
| | - Huaan Wang
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024, China
| | - Lujing Sun
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024, China
| | - Fan Zhang
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024, China
| | - Yu Zhang
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024, China
| | - Penghe Yin
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024, China
| | - Li Chen
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024, China
| | - Dazhi Wang
- Key Laboratory for Micro/Nano Technology and System of Liaoning Province and State Key Laboratory of High-performance Precision Manufacturing, Dalian University of Technology, Dalian 116024, China
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15
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Ryu JE, Park S, Park Y, Ryu SW, Hwang K, Jang HW. Technological Breakthroughs in Chip Fabrication, Transfer, and Color Conversion for High-Performance Micro-LED Displays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204947. [PMID: 35950613 DOI: 10.1002/adma.202204947] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2022] [Revised: 08/05/2022] [Indexed: 06/15/2023]
Abstract
The implementation of high-efficiency and high-resolution displays has been the focus of considerable research interest. Recently, micro light-emitting diodes (micro-LEDs), which are inorganic light-emitting diodes of size <100 µm2 , have emerged as a promising display technology owing to their superior features and advantages over other displays like liquid crystal displays and organic light-emitting diodes. Although many companies have introduced micro-LED displays since 2012, obstacles to mass production still exist. Three major challenges, i.e., low quantum efficiency, time-consuming transfer, and complex color conversion, have been overcome with technological breakthroughs to realize cost-effective micro-LED displays. In the review, methods for improving the degraded quantum efficiency of GaN-based micro-LEDs induced by the size effect are examined, including wet chemical treatment, passivation layer adoption, LED structure design, and growing LEDs in self-passivated structures. Novel transfer technologies, including pick-up transfer and self-assembly methods, for developing large-area micro-LED displays with high yield and reliability are discussed in depth. Quantum dots as color conversion materials for high color purity, and deposition methods such as electrohydrodynamic jet printing or contact printing on micro-LEDs are also addressed. This review presents current status and critical challenges of micro-LED technology and promising technical breakthroughs for commercialization of high-performance displays.
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Affiliation(s)
- Jung-El Ryu
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sohyeon Park
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Yongjo Park
- Advance Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
| | - Sang-Wan Ryu
- Department of Physics, Chonnam National University, Gwangju, 61186, Republic of Korea
| | - Kyungwook Hwang
- Samsung Advanced Institute of Technology, Suwon, 16678, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Advance Institute of Convergence Technology, Seoul National University, Suwon, 16229, Republic of Korea
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16
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Park SY, Lee S, Yang J, Kang MS. Patterning Quantum Dots via Photolithography: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300546. [PMID: 36892995 DOI: 10.1002/adma.202300546] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 02/28/2023] [Indexed: 06/18/2023]
Abstract
Pixelating patterns of red, green, and blue quantum dots (QDs) is a critical challenge for realizing high-end displays with bright and vivid images for virtual, augmented, and mixed reality. Since QDs must be processed from a solution, their patterning process is completely different from the conventional techniques used in the organic light-emitting diode and liquid crystal display industries. Although innovative QD patterning technologies are being developed, photopatterning based on the light-induced chemical conversion of QD films is considered one of the most promising methods for forming micrometer-scale QD patterns that satisfy the precision and fidelity required for commercialization. Moreover, the practical impact will be significant as it directly exploits mature photolithography technologies and facilities that are widely available in the semiconductor industry. This article reviews recent progress in the effort to form QD patterns via photolithography. The review begins with a general description of the photolithography process. Subsequently, different types of photolithographical methods applicable to QD patterning are introduced, followed by recent achievements using these methods in forming high-resolution QD patterns. The paper also discusses prospects for future research directions.
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Affiliation(s)
- Se Young Park
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Seongjae Lee
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Jeehye Yang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
- Institute of Emergent Materials, Sogang University, Seoul, 04107, South Korea
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17
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Antolini F. Direct Optical Patterning of Quantum Dots: One Strategy, Different Chemical Processes. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2008. [PMID: 37446523 DOI: 10.3390/nano13132008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2023] [Revised: 06/30/2023] [Accepted: 07/03/2023] [Indexed: 07/15/2023]
Abstract
Patterning, stability, and dispersion of the semiconductor quantum dots (scQDs) are three issues strictly interconnected for successful device manufacturing. Recently, several authors adopted direct optical patterning (DOP) as a step forward in photolithography to position the scQDs in a selected area. However, the chemistry behind the stability, dispersion, and patterning has to be carefully integrated to obtain a functional commercial device. This review describes different chemical strategies suitable to stabilize the scQDs both at a single level and as an ensemble. Special attention is paid to those strategies compatible with direct optical patterning (DOP). With the same purpose, the scQDs' dispersion in a matrix was described in terms of the scQD surface ligands' interactions with the matrix itself. The chemical processes behind the DOP are illustrated and discussed for five different approaches, all together considering stability, dispersion, and the patterning itself of the scQDs.
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Affiliation(s)
- Francesco Antolini
- Fusion and Technologies for Nuclear Safety and Security Department, Physical Technology for Safety and Health Division, ENEA C.R. Frascati, Via E. Fermi 45, 00044 Frascati, Italy
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18
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Chen Y, Lao Z, Wang R, Li J, Gai J, You H. Prediction of Both E-Jet Printing Ejection Cycle Time and Droplet Diameter Based on Random Forest Regression. MICROMACHINES 2023; 14:623. [PMID: 36985030 PMCID: PMC10056634 DOI: 10.3390/mi14030623] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/14/2023] [Revised: 03/01/2023] [Accepted: 03/07/2023] [Indexed: 06/18/2023]
Abstract
Electrohydrodynamic jet (E-jet) printing has broad application prospects in the preparation of flexible electronics and optical devices. Ejection cycle time and droplet size are two key factors affecting E-jet-printing quality, but due to the complex process of E-jet printing, it remains a challenge to establish accurate relationships among ejection cycle time and droplet diameter and printing parameters. This paper develops a model based on random forest regression (RFR) for E-jet-printing prediction. Trained with 72 groups of experimental data obtained under four printing parameters (voltage, nozzle-to-substrate distance, liquid viscosity, and liquid conductivity), the RFR model achieved a MAPE (mean absolute percent error) of 4.35% and an RMSE (root mean square error) of 0.04 ms for eject cycle prediction, as well as a MAPE of 2.89% and an RMSE of 0.96 μm for droplet diameter prediction. With limited training data, the RFR model achieved the best prediction accuracy among several machine-learning models (RFR, CART, SVR, and ANN). The proposed prediction model provides an efficient and effective way to simultaneously predict the ejection cycle time and droplet diameter, advancing E-jet printing toward the goal of accurate, drop-on-demand printing.
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19
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Nam TW, Choi MJ, Jung YS. Ultrahigh-resolution quantum dot patterning for advanced optoelectronic devices. Chem Commun (Camb) 2023; 59:2697-2710. [PMID: 36751869 DOI: 10.1039/d2cc05874j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/29/2023]
Abstract
Quantum dots have attracted significant scientific interest owing to their optoelectronic properties, which are distinct from their bulk counterparts. In order to fully utilize quantum dots for next generation devices with advanced functionalities, it is important to fabricate quantum dot colloids into dry patterns with desired feature sizes and shapes with respect to target applications. In this review, recent progress in ultrahigh-resolution quantum dot patterning technologies will be discussed, with emphasis on the characteristic advantages as well as the limitations of diverse technologies. This will provide guidelines for selecting suitable tools to handle quantum dot colloids throughout the fabrication of quantum dot based solid-state devices. Additionally, epitaxially fabricated single-particle level quantum dot arrays are discussed. These are extreme in terms of pattern resolution, and expand the potential application of quantum dots to quantum information processing.
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Affiliation(s)
- Tae Won Nam
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
| | - Min-Jae Choi
- Department of Chemical and Biochemical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
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20
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Wang H, Zhang Y, Liu Y, Chen Z, Li Y, Li X, Xu X. High-efficiency and high-resolution patterned quantum dot light emitting diodes by electrohydrodynamic printing. NANOSCALE ADVANCES 2023; 5:1183-1189. [PMID: 36798500 PMCID: PMC9926896 DOI: 10.1039/d2na00862a] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 01/12/2023] [Indexed: 06/18/2023]
Abstract
The development of quantum dot light-emitting diode (QLED) fabrication technologies for high-definition and low-cost displays is an important research topic. However, commercially available piezoelectric inkjet printing has reached its limit in reducing pixel sizes, which restricts its potential use in high-resolution displays. Here, we exhibit an electrohydrodynamic (EHD) printing method for manufacturing QLEDs with a high resolution of 500 ppi that remarkably surpasses the resolution of conventional inkjet printing displays. By optimizing the EHD printing process, a high-resolution pixelated bottom-emitting passive matrix QLED with a maximal current efficiency of 14.4 cd A-1 in a pixel size of 5 μm × 39 μm was achieved, indicating the capability of the EHD method in superfine printing and high efficiency QLED. Moreover, a top-emitting device is designed using a capping layer; the maximal current efficiency of top-emission passive matrix QLED devices can reach up to 16.5 cd A-1. Finally, a two-color (red and green) bottom-emission QLED device with 500 ppi was fabricated. The successful fabrication of these high-efficiency QLEDs with 500 ppi demonstrated that the EHD printing strategy has numerous potential applications in high-resolution and high-performance QLEDs for a range of applications, such as mobile or wearable devices.
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Affiliation(s)
- Haowei Wang
- BOE Technology Group Co., Ltd. No. 9 Dize Road Beijing 100176 China
| | - Yuanming Zhang
- BOE Technology Group Co., Ltd. No. 9 Dize Road Beijing 100176 China
| | - Yang Liu
- BOE Technology Group Co., Ltd. No. 9 Dize Road Beijing 100176 China
| | - Zhuo Chen
- BOE Technology Group Co., Ltd. No. 9 Dize Road Beijing 100176 China
| | - Yanzhao Li
- BOE Technology Group Co., Ltd. No. 9 Dize Road Beijing 100176 China
| | - Xinguo Li
- BOE Technology Group Co., Ltd. No. 9 Dize Road Beijing 100176 China
| | - Xiaoguang Xu
- BOE Technology Group Co., Ltd. No. 9 Dize Road Beijing 100176 China
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21
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Baek GW, Kim YJ, Lee M, Kwon Y, Chun B, Park G, Seo H, Yang H, Kwak J. Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors. MATERIALS (BASEL, SWITZERLAND) 2022; 15:ma15238511. [PMID: 36500003 PMCID: PMC9736594 DOI: 10.3390/ma15238511] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Revised: 11/18/2022] [Accepted: 11/27/2022] [Indexed: 05/28/2023]
Abstract
This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT-QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays.
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Affiliation(s)
- Geun Woo Baek
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Yeon Jun Kim
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Minhyung Lee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Yeunwoo Kwon
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Beomsoo Chun
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Ganghyun Park
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Hansol Seo
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
| | - Heesun Yang
- Department of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Jeonghun Kwak
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Soft Foundry Institute, Seoul National University, Seoul 08826, Republic of Korea
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22
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Huang Z, Lin Y. Transfer printing technologies for soft electronics. NANOSCALE 2022; 14:16749-16760. [PMID: 36353821 DOI: 10.1039/d2nr04283e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Soft electronics have received increasing attention in recent years, owing to their wide range of applications in dynamic nonplanar surface integration electronics that include skin electronics, implantable devices, and soft robotics. Transfer printing is a widely used assembly technology for micro- and nano-fabrication, which enables the integration of functional devices with flexible or elastomeric substrates for the manufacturing of soft electronics. Through advanced materials and process design, numerous impressive studies related to transfer printing strategies and applications have been proposed. Herein, a discussion of transfer printing technologies toward soft electronics in terms of mechanisms and example demonstrations is provided. Moreover, the perspectives on the potential challenges and future directions of this field are briefly discussed.
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Affiliation(s)
- Zhenlong Huang
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, China.
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518110, Guangdong, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, China
- Research Centre for Information Technology, Shenzhen Institute of Information Technology, Shenzhen 518172, Guangdong, China
| | - Yuan Lin
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, China.
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518110, Guangdong, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan, China
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23
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Luminous Self-Assembled Fibers of Azopyridines and Quantum Dots Enabled by Synergy of Halogen Bond and Alkyl Chain Interactions. MOLECULES (BASEL, SWITZERLAND) 2022; 27:molecules27238165. [PMID: 36500259 PMCID: PMC9739974 DOI: 10.3390/molecules27238165] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/15/2022] [Revised: 11/08/2022] [Accepted: 11/15/2022] [Indexed: 11/25/2022]
Abstract
Herein, a simple approach for the fabrication of luminous self-assembled fibers based on halogen-bonded azopyridine complexes and oleic acid-modified quantum dots (QDs) is reported. The QDs uniformly align on the edge of the self-assembled fibers through the formation of van der Waals force between the alkyl chain of oleic acid on the QD surface and the alkyl chain of the halogen-bonded complexes, 15Br or 15I. Furthermore, the intermolecular interaction mechanism was elucidated by using Fourier-transform infrared spectroscopy (FTIR), Raman spectroscopy, and density functional theory (DFT) calculations. This approach results in retention of the fluorescence properties of the QDs in the fibers. In addition, the bromine-bonded fibers can be assembled into tailored directional fibers upon evaporation of the solvent (tetrahydrofuran) when using capillaries via the capillary force. Interestingly, the mesogenic properties of the halogen-bonded complexes are preserved in the easily prepared halogen-bonded fluorescent fibers; this provides new insight into the design of functional self-assembly materials.
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24
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Zhang S, Bi C, Tan Y, Luo Y, Liu Y, Cao J, Chen M, Hao Q, Tang X. Direct Optical Lithography Enabled Multispectral Colloidal Quantum-Dot Imagers from Ultraviolet to Short-Wave Infrared. ACS NANO 2022; 16:18822-18829. [PMID: 36346695 PMCID: PMC9706660 DOI: 10.1021/acsnano.2c07586] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Accepted: 11/04/2022] [Indexed: 06/13/2023]
Abstract
Complementary metal oxide semiconductor (CMOS) silicon sensors play a central role in optoelectronics with widespread applications from small cell phone cameras to large-format imagers for remote sensing. Despite numerous advantages, their sensing ranges are limited within the visible (0.4-0.7 μm) and near-infrared (0.8-1.1 μm) range , defined by their energy gaps (1.1 eV). However, below or above that spectral range, ultraviolet (UV) and short-wave infrared (SWIR) have been demonstrated in numerous applications such as fingerprint identification, night vision, and composition analysis. In this work, we demonstrate the implementation of multispectral broad-band CMOS-compatible imagers with UV-enhanced visible pixels and SWIR pixels by layer-by-layer direct optical lithography of colloidal quantum dots (CQDs). High-resolution single-color images and merged multispectral images were obtained by using one imager. The photoresponse nonuniformity (PRNU) is below 5% with a 0% dead pixel rate and room-temperature responsivities of 0.25 A/W at 300 nm, 0.4 A/W at 750 nm, and 0.25 A/W at 2.0 μm.
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Affiliation(s)
- Shuo Zhang
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
| | - Cheng Bi
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
- Zhongxinrecheng
Science and Technology Co., Ltd., Beijing101102, People’s
Republic of China
| | - Yimei Tan
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
| | - Yuning Luo
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
| | - Yanfei Liu
- Zhongxinrecheng
Science and Technology Co., Ltd., Beijing101102, People’s
Republic of China
| | - Jie Cao
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
- Beijing
Key Laboratory for Precision Optoelectronic Measurement Instrument
and Technology, Beijing100081, People’s Republic of China
- Yangtze
Delta Region Academy of Beijing Institute of Technology, Jiaxing314019, People’s Republic of China
| | - Menglu Chen
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
- Beijing
Key Laboratory for Precision Optoelectronic Measurement Instrument
and Technology, Beijing100081, People’s Republic of China
- Yangtze
Delta Region Academy of Beijing Institute of Technology, Jiaxing314019, People’s Republic of China
| | - Qun Hao
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
- Beijing
Key Laboratory for Precision Optoelectronic Measurement Instrument
and Technology, Beijing100081, People’s Republic of China
- Yangtze
Delta Region Academy of Beijing Institute of Technology, Jiaxing314019, People’s Republic of China
| | - Xin Tang
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
- Beijing
Key Laboratory for Precision Optoelectronic Measurement Instrument
and Technology, Beijing100081, People’s Republic of China
- Yangtze
Delta Region Academy of Beijing Institute of Technology, Jiaxing314019, People’s Republic of China
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25
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Srivastava S, Lee KE, Fitzgerald EA, Pennycook SJ, Gradečak S. Freestanding High-Resolution Quantum Dot Color Converters with Small Pixel Sizes. ACS APPLIED MATERIALS & INTERFACES 2022; 14:48995-49002. [PMID: 36274221 DOI: 10.1021/acsami.2c14212] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Designing the next generation of high-resolution displays requires high pixel density per area and small pixel sizes without compromising the optical quality. Quantum dots (QDs) have been demonstrated as a promising material system for down-conversion of blue emission as they provide pure colors on the wide color gamut. However, for high color-conversion efficiency, the required QD film thickness has not been compatible with small pixel sizes. In this work, we develop a new type of freestanding QD-based color converter for efficient optical down-conversion from inorganic blue light-emitting diodes (LEDs) in a color-by-blue configuration. CdSe/ZnS core-shell QDs in a UV-curable polymer matrix are encapsulated within cavities formed by patterning and bonding a pair of patterned quartz substrates. By controlling the required QD thickness and the pixel size independently, we demonstrate freestanding monochrome red and green converters with small pixel sizes down to 5 × 5 μm2 and a high resolution of >3600 ppi. The optical studies show that the QD film thickness required for efficient color conversion can be successfully realized even for the small pixel sizes. We further combine green and red pixels in a single converter to achieve white emission when combined with blue LED emission. The QD color converter design and processing are decoupled from the LED fabrication and can be easily scaled to wafer-size integration with arbitrary pixel sizes for QD-based RGB displays with ultrahigh resolution.
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Affiliation(s)
- Saurabh Srivastava
- Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 1 Create Way, 138602 Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, 138634 Singapore
| | - Kenneth E Lee
- Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 1 Create Way, 138602 Singapore
| | - Eugene A Fitzgerald
- Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 1 Create Way, 138602 Singapore
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02141, United States
| | - Stephen J Pennycook
- Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 1 Create Way, 138602 Singapore
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575 Singapore
| | - Silvija Gradečak
- Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology (SMART), 1 Create Way, 138602 Singapore
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02141, United States
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575 Singapore
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26
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Wang J, Yi M, Xin Y, Pang Y, Zou Y. Reduced Graphene Oxide Quantum Dot Light Emitting Diodes Fabricated Using an Ultraviolet Light Emitting Diode Photolithography Technique. ACS APPLIED MATERIALS & INTERFACES 2022; 14:48976-48985. [PMID: 36278937 DOI: 10.1021/acsami.2c13821] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Graphene quantum dots usually suffer from serious fluorescence quenching in aggregates and the solid state due to easy agglomeration and aggregation-induced quenching, which seriously restrict their practical applications. An ingenious strategy to kill three birds with one stone, the ultraviolet (UV) photolithography technique, was studied, and blue-emitting reduced graphene oxide quantum dot (rGOQD)-based light emitting diodes (LEDs) with efficient solid state emission were first fabricated using UV photolithography. First, rGOQDs were prepared by the in situ photoreduction of GOQDs by using the photoinitiator phenyl bis(2,4,6-trimethylbenzoyl)phosphine oxide with 395 nm UV LED exposure. Furthermore, rGOQD/photoresist patterns were prepared under the same conditions. Meanwhile, the in situ photoreduction of GO in the aforementioned photoresist to rGO was realized by UV photolithography to improve the conductivity of the rGOQD/photoresist films. Additionally, the in situ photoreduction of GOQDs in different surroundings was studied, with the results showing that GOQDs are more easily photoreduced in ionic liquids and that the photoluminescence spectrum obtained for rGOQDs exhibits a 70 nm blueshift with a narrow full-width at half-maximum compared to GOQDs.
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Affiliation(s)
- Jing Wang
- College of Chemistry, Beijing Normal University, No.19, Xinjiekouwai St. Haidian District, Beijing 100875, P. R. China
| | - Mei Yi
- College of Chemistry, Beijing Normal University, No.19, Xinjiekouwai St. Haidian District, Beijing 100875, P. R. China
| | - Yangyang Xin
- Hubei Gurun Technology Co., Ltd, Jingmen Chemical Recycling Industrial Park, Jingmen, Hubei Province 448000, P. R. China
| | - Yulian Pang
- Hubei Gurun Technology Co., Ltd, Jingmen Chemical Recycling Industrial Park, Jingmen, Hubei Province 448000, P. R. China
| | - Yingquan Zou
- College of Chemistry, Beijing Normal University, No.19, Xinjiekouwai St. Haidian District, Beijing 100875, P. R. China
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27
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Song KM, Kim M, Cho H, Shin H, Kim GY, Yim S, Nam TW, Jung YS. Noninvasive and Direct Patterning of High-Resolution Full-Color Quantum Dot Arrays by Programmed Microwetting. ACS NANO 2022; 16:16598-16607. [PMID: 36130159 DOI: 10.1021/acsnano.2c06032] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Although the commercialization of electroluminescent quantum-dot (QD) displays essentially demands multicolor patterning of QDs with sufficient scalability and uniformity, the implementation of QD patterning in a light-emitting diode device is highly challenging, mainly due to the innate vulnerability of QDs and charge-transport layers. Here, we introduce a noninvasive surface-wetting approach for patterning full-color QD arrays on a photoprogrammed hole-transport layer (HTL). To achieve noninvasiveness of QD patterning, surface-specific modification of HTLs was performed without degrading their performance. Moreover, engineering the solvent evaporation kinetics allows area-selective wetting of QD patterns with a uniform thickness profile. Finally, multicolor QD patterning was enabled by preventing cross-contamination between different QD colloids via partial fluoro-encapsulation of earlier-patterned QDs. Throughout the overall QD patterning process, the optoelectronic properties of QDs and hole-transport layers are well preserved, and prototype electroluminescent quantum dot light-emitting diode arrays with high current efficiency and brightness were realized.
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Affiliation(s)
- Kyeong Min Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Moohyun Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyunjin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hongjoo Shin
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Geon Yeong Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Soonmin Yim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Tae Won Nam
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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28
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Duan Y, Yang W, Xiao J, Gao J, Wei L, Huang Y, Yin Z. High density, addressable electrohydrodynamic printhead made of a silicon plate and polymer nozzle structure. LAB ON A CHIP 2022; 22:3877-3884. [PMID: 36073597 DOI: 10.1039/d2lc00624c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Electrohydrodynamic (EHD) printing is a promising micro/nanofabrication technique, due to its ultra-high resolution and wide material applicability. However, it suffers from low printing efficiency which urgently calls for a high density and addressable nozzle array. This paper presents a nozzle array chip made of a silicon plate and polymer nozzle structure, where the large silicon plate is conducive to a uniform spatial electric field distribution, and the polymer SU8 nozzle can inhibit tip discharge due to its insulating character and liquid flooding as SU8 is hydrophobic. By carefully designing the nozzle array structure via simulation, and fabricating it through MEMS technology, a high-density nozzle array chip has been achieved which can generate very uniform dots without crosstalk. Meanwhile, by adding extractors underneath the nozzle array, and utilizing a digital switch array to tune their on/off state, addressable printing has been realized. This novel printhead design has solved the discharge, liquid flooding, and crosstalk behavior in EHD nozzle arrays, and is compatible with traditional silicon-based MEMS technology, which will promote the practical applications of EHD printing in micro/nanoelectronics, biomedical/energy devices, etc.
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Affiliation(s)
- Yongqing Duan
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Weili Yang
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.
| | - Jingjing Xiao
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.
| | - Jixin Gao
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.
| | - Lai Wei
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.
| | - YongAn Huang
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhouping Yin
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China.
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, China
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29
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Duan Y, Li H, Yang W, Shao Z, Wang Q, Huang Y, Yin Z. Mode-tunable, micro/nanoscale electrohydrodynamic deposition techniques for optoelectronic device fabrication. NANOSCALE 2022; 14:13452-13472. [PMID: 36082930 DOI: 10.1039/d2nr03049g] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The rapid development of fascinating new optoelectronic materials and devices calls for the innovative production of micro/nanostructures in a high-resolution, large-scale, low-cost fashion, preferably compatible with flexible/wearable applications. Powerful electrohydrodynamic (EHD) deposition techniques, which generate micro/nanostructures using high electrical forces, exhibit unique advantages in high printing resolution (<1 μm), tunable printing modes (electrospray for films, electrospinning for fibers and EHD jet printing for dots), and wide material applicability (viscosity 1-10 000 cps), making them attractive in the fabrication of high-density and high-tech optoelectronic devices. This review highlights recent advances related to EHD-deposited optoelectronics, ranging from solar cells, photodetectors, and light-emitting diodes, to transparent electrodes, with detailed descriptions of the EHD-based jetting mechanism, ink formulation requirements and corresponding jetting modes to obtain functional micro/nanostructures. Finally, a brief summary and an outlook on the future perspectives are proposed.
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Affiliation(s)
- Yongqing Duan
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Huayang Li
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Weili Yang
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhilong Shao
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Qilu Wang
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - YongAn Huang
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhouping Yin
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Flexible Electronics Research Center, Huazhong University of Science and Technology, Wuhan 430074, China
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30
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Wang R, Xiang H, Tu S, Li Y, Zhou Y, Zeng H. Full solution-processed heavy-metal-free mini-QLEDs for flexible display applications. NANOSCALE 2022; 14:12736-12743. [PMID: 36000404 DOI: 10.1039/d2nr03082a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Micro/mini displays play an extremely significant role in the modern information society, which is treated as a promising technology for a range of applications. Here, utilizing the full solution process with the electrode array mask, we successfully achieved passive-matrix and active-matrix mini-quantum dot light-emitting diodes (PM/AM-m-QLEDs) based on heavy-metal-free blue ZnTeSe/ZnS QDs. The pixels per inch (PPI) of m-QLEDs fabricated in this study can reach 36, 90, 180, and 360, which meet the requirements of televisions, computers, and mobile phones. Moreover, by adjusting the electrodes, m-QLEDs achieved patterned display applications based on both flexible and solid substrates. These results imply that heavy-metal-free blue m-QLEDs show a wide display application potential, i.e., AM/PM displays. Given the low-cost advantage of solution-processed QDs, our proposed techniques could pave the way for low-cost displays.
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Affiliation(s)
- Run Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Hengyang Xiang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Siyuan Tu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Yan Li
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Yihui Zhou
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
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31
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Abbasi Shirsavar M, Taghavimehr M, Ouedraogo LJ, Javaheripi M, Hashemi NN, Koushanfar F, Montazami R. Machine learning-assisted E-jet printing for manufacturing of organic flexible electronics. Biosens Bioelectron 2022; 212:114418. [DOI: 10.1016/j.bios.2022.114418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/25/2022] [Revised: 05/17/2022] [Accepted: 05/19/2022] [Indexed: 11/02/2022]
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32
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Hahm D, Lim J, Kim H, Shin JW, Hwang S, Rhee S, Chang JH, Yang J, Lim CH, Jo H, Choi B, Cho NS, Park YS, Lee DC, Hwang E, Chung S, Kang CM, Kang MS, Bae WK. Direct patterning of colloidal quantum dots with adaptable dual-ligand surface. NATURE NANOTECHNOLOGY 2022; 17:952-958. [PMID: 35953539 DOI: 10.1038/s41565-022-01182-5] [Citation(s) in RCA: 35] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Accepted: 06/24/2022] [Indexed: 06/15/2023]
Abstract
Colloidal quantum dots (QDs) stand at the forefront of a variety of photonic applications given their narrow spectral bandwidth and near-unity luminescence efficiency. However, integrating luminescent QD films into photonic devices without compromising their optical or transport characteristics remains challenging. Here we devise a dual-ligand passivation system comprising photocrosslinkable ligands and dispersing ligands to enable QDs to be universally compatible with solution-based patterning techniques. The successful control over the structure of both ligands allows the direct patterning of dual-ligand QDs on various substrates using commercialized photolithography (i-line) or inkjet printing systems at a resolution up to 15,000 pixels per inch without compromising the optical properties of the QDs or the optoelectronic performance of the device. We demonstrate the capabilities of our approach for QD-LED applications. Our approach offers a versatile way of creating various structures of luminescent QDs in a cost-effective and non-destructive manner, and could be implemented in nearly all commercial photonics applications where QDs are used.
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Affiliation(s)
- Donghyo Hahm
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Jaemin Lim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Hyeokjun Kim
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea
| | - Jin-Wook Shin
- Reality Display Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
| | - Seongkwon Hwang
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Seunghyun Rhee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
- Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon, Republic of Korea
| | - Jun Hyuk Chang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Jeehye Yang
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea
| | - Chang Hyeok Lim
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea
| | - Hyunwoo Jo
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea
| | - Beomgyu Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Nam Sung Cho
- Reality Display Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
| | - Young-Shin Park
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Seungjun Chung
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Chan-Mo Kang
- Reality Display Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea.
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea.
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea.
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33
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Wu XG, Ji H, Yan X, Zhong H. Industry outlook of perovskite quantum dots for display applications. NATURE NANOTECHNOLOGY 2022; 17:813-816. [PMID: 35869367 DOI: 10.1038/s41565-022-01163-8] [Citation(s) in RCA: 26] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Affiliation(s)
- Xian-Gang Wu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing, China
| | - Honglei Ji
- TCL Electronics Holdings Limited, Shenzhen, China
| | - Xiaolin Yan
- TCL Electronics Holdings Limited, Shenzhen, China
| | - Haizheng Zhong
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing, China.
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34
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Cohen TA, Sharp D, Kluherz KT, Chen Y, Munley C, Anderson RT, Swanson CJ, De Yoreo JJ, Luscombe CK, Majumdar A, Gamelin DR, Mackenzie JD. Direct Patterning of Perovskite Nanocrystals on Nanophotonic Cavities with Electrohydrodynamic Inkjet Printing. NANO LETTERS 2022; 22:5681-5688. [PMID: 35819950 DOI: 10.1021/acs.nanolett.2c00473] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Overcoming the challenges of patterning luminescent materials will unlock additive and more sustainable paths for the manufacturing of next-generation on-chip photonic devices. Electrohydrodynamic (EHD) inkjet printing is a promising method for deterministically placing emitters on these photonic devices. However, the use of this technique to pattern luminescent lead halide perovskite nanocrystals (NCs), notable for their defect tolerance and impressive optical and spin coherence properties, for integration with optoelectronic devices remains unexplored. In this work, we additively deposit nanoscale CsPbBr3 NC features on photonic structures via EHD inkjet printing. We perform transmission electron microscopy of EHD inkjet printed NCs to demonstrate that the NCs' structural integrity is maintained throughout the printing process. Finally, NCs are deposited with sub-micrometer control on an array of parallel silicon nitride nanophotonic cavities and demonstrate cavity-emitter coupling via photoluminescence spectroscopy. These results demonstrate EHD inkjet printing as a scalable, precise method to pattern luminescent nanomaterials for photonic applications.
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Affiliation(s)
- Theodore A Cohen
- Molecular Engineering and Sciences Institute, University of Washington, Seattle, Washington 98195, United States
| | - David Sharp
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Kyle T Kluherz
- Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
| | - Yueyang Chen
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Christopher Munley
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Rayne T Anderson
- Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Connor J Swanson
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - James J De Yoreo
- Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
- Physical Sciences Division, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
| | - Christine K Luscombe
- Molecular Engineering and Sciences Institute, University of Washington, Seattle, Washington 98195, United States
- Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Arka Majumdar
- Department of Physics, University of Washington, Seattle, Washington 98195, United States
- Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Daniel R Gamelin
- Molecular Engineering and Sciences Institute, University of Washington, Seattle, Washington 98195, United States
- Department of Chemistry, University of Washington, Seattle, Washington 98195, United States
| | - J Devin Mackenzie
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
- Department of Mechanical Engineering, University of Washington, Seattle, Washington 98195, United States
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35
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Yoo J, Li S, Kim DH, Yang J, Choi MK. Materials and design strategies for stretchable electroluminescent devices. NANOSCALE HORIZONS 2022; 7:801-821. [PMID: 35686540 DOI: 10.1039/d2nh00158f] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Stretchable displays have recently received increasing attention as input and/or output interfaces for next-generation human-friendly electronic systems. Stretchable electroluminescent (EL) devices are a core component of stretchable displays, and they can be classified into two types, structurally stretchable EL devices and intrinsically stretchable EL devices, according to the mechanism for achieving their stretchability. We herein present recent advances in materials and design strategies for stretchable EL devices. First, stretchable devices based on ultrathin EL devices are introduced. Ultrathin EL devices are mechanically flexible like thin paper, and they can become stretchable through various structural engineering methods, such as inducing a buckled structure, employing interconnects with stretchable geometries, and applying origami/kirigami techniques. Secondly, intrinsically stretchable EL devices can be fabricated by using inherently stretchable electronic materials. For example, light-emitting electrochemical cells and EL devices with a simpler structure using alternating current have been developed. Furthermore, novel stretchable semiconductor materials have been presented for the development of intrinsically stretchable light-emitting diodes. After discussing these two types of stretchable EL devices, we briefly discuss applications of deformable EL devices and conclude the review.
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Affiliation(s)
- Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
| | - Shi Li
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea.
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea.
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea.
- Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
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Liu W, Li Y, Li D, Chen L, Zhao J, Liu P, Sun XW, Wang G. On Cordelair-Greil Model about Electrophoretic Deposition. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107629. [PMID: 35615935 DOI: 10.1002/smll.202107629] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2021] [Revised: 05/04/2022] [Indexed: 06/15/2023]
Abstract
Electrophoretic deposition (EPD) is a facile technique to deposit quantum dots (QDs) films, which can be used as the color conversion layers for display applications. To better understand the EPD process, researchers have built many models of the EPD process. However, most of these models lack solid experimental support. Here, by adopting simple yet effective solvent engineering and well-designed experiments, this study proves the Cordelair-Greil model on EPD processes. Moreover, some supplements about this model are made according to practical experiments. The experimental verification of the Cordelair-Greil model is a solid step toward revealing the dynamics of the EPD process. Furthermore, the formation of cracks in EPD deposited QD films is prevented through solvent engineering. This work proves that besides modifying the intrinsic properties of QDs, solvent engineering is also a simple, effective, and low-cost way to study the EPD process and improve the QD film qualities deposited.
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Affiliation(s)
- Wenbo Liu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, P. R. China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy, Materials and Devices, Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Yifei Li
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, P. R. China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy, Materials and Devices, Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Depeng Li
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, P. R. China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy, Materials and Devices, Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Lixuan Chen
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, P. R. China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy, Materials and Devices, Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Jinyang Zhao
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, P. R. China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy, Materials and Devices, Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Pai Liu
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, P. R. China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy, Materials and Devices, Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Xiao Wei Sun
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, P. R. China
- Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy, Materials and Devices, Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Guoping Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
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37
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Wu H, Wang Y, Yu J, Pan JA, Cho H, Gupta A, Coropceanu I, Zhou C, Park J, Talapin DV. Direct Heat-Induced Patterning of Inorganic Nanomaterials. J Am Chem Soc 2022; 144:10495-10506. [PMID: 35679484 DOI: 10.1021/jacs.2c03672] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Patterning functional inorganic nanomaterials is an important process for advanced manufacturing of quantum dot (QD) electronic and optoelectronic devices. This is typically achieved by inkjet printing, microcontact printing, and photo- and e-beam lithography. Here, we investigate a different patterning approach that utilizes local heating, which can be generated by various sources, such as UV-, visible-, and IR-illumination, or by proximity heat transfer. This direct thermal lithography method, termed here heat-induced patterning of inorganic nanomaterials (HIPIN), uses colloidal nanomaterials with thermally unstable surface ligands. We designed several families of such ligands and investigated their chemical and physical transformations responsible for heat-induced changes of nanocrystal solubility. Compared to traditional photolithography using photochemical surface reactions, HIPIN extends the scope of direct optical lithography toward longer wavelengths of visible (532 nm) and infrared (10.6 μm) radiation, which is necessary for patterning optically thick layers (e.g., 1.2 μm) of light-absorbing nanomaterials. HIPIN enables patterning of features defined by the diffraction-limited beam size. Our approach can be used for direct patterning of metal, semiconductor, and dielectric nanomaterials. Patterned semiconductor QDs retain the majority of their as-synthesized photoluminescence quantum yield. This work demonstrates the generality of thermal patterning of nanomaterials and provides a new path for additive device manufacturing using diverse colloidal nanoscale building blocks.
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Affiliation(s)
- Haoqi Wu
- Department of Chemistry and James Franck Institute, Chicago, Illinois 60637, United States
| | - Yuanyuan Wang
- Department of Chemistry and James Franck Institute, Chicago, Illinois 60637, United States.,School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P. R. China
| | - Jaehyung Yu
- Department of Chemistry and James Franck Institute, Chicago, Illinois 60637, United States
| | - Jia-Ahn Pan
- Department of Chemistry and James Franck Institute, Chicago, Illinois 60637, United States
| | - Himchan Cho
- Department of Chemistry and James Franck Institute, Chicago, Illinois 60637, United States.,Department of Materials Science and Engineering, KAIST, Daejeon 34141, Repulic of Korea
| | - Aritrajit Gupta
- Department of Chemistry and James Franck Institute, Chicago, Illinois 60637, United States
| | - Igor Coropceanu
- Department of Chemistry and James Franck Institute, Chicago, Illinois 60637, United States
| | - Chenkun Zhou
- Department of Chemistry and James Franck Institute, Chicago, Illinois 60637, United States
| | - Jiwoong Park
- Department of Chemistry and James Franck Institute, Chicago, Illinois 60637, United States.,Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Dmitri V Talapin
- Department of Chemistry and James Franck Institute, Chicago, Illinois 60637, United States.,Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.,Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60517, United States
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38
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Rogkas N, Vakouftsis C, Spitas V, Lagaros ND, Georgantzinos SK. Design Aspects of Additive Manufacturing at Microscale: A Review. MICROMACHINES 2022; 13:mi13050775. [PMID: 35630242 PMCID: PMC9147298 DOI: 10.3390/mi13050775] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/25/2022] [Revised: 04/27/2022] [Accepted: 05/12/2022] [Indexed: 02/06/2023]
Abstract
Additive manufacturing (AM) technology has been researched and developed for almost three decades. Microscale AM is one of the fastest-growing fields of research within the AM area. Considerable progress has been made in the development and commercialization of new and innovative microscale AM processes, as well as several practical applications in a variety of fields. However, there are still significant challenges that exist in terms of design, available materials, processes, and the ability to fabricate true three-dimensional structures and systems at a microscale. For instance, microscale AM fabrication technologies are associated with certain limitations and constraints due to the scale aspect, which may require the establishment and use of specialized design methodologies in order to overcome them. The aim of this paper is to review the main processes, materials, and applications of the current microscale AM technology, to present future research needs for this technology, and to discuss the need for the introduction of a design methodology. Thus, one of the primary concerns of the current paper is to present the design aspects describing the comparative advantages and AM limitations at the microscale, as well as the selection of processes and materials.
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Affiliation(s)
- Nikolaos Rogkas
- Laboratory of Machine Design, National Technical University of Athens, 9 Iroon Polytechniou, 15780 Zografou, Greece; (N.R.); (C.V.); (V.S.)
| | - Christos Vakouftsis
- Laboratory of Machine Design, National Technical University of Athens, 9 Iroon Polytechniou, 15780 Zografou, Greece; (N.R.); (C.V.); (V.S.)
| | - Vasilios Spitas
- Laboratory of Machine Design, National Technical University of Athens, 9 Iroon Polytechniou, 15780 Zografou, Greece; (N.R.); (C.V.); (V.S.)
| | - Nikos D. Lagaros
- Institute of Structural Analysis and Antiseismic Research, School of Civil Engineering, National Technical University of Athens, 9 Iroon Polytechniou, 15780 Zographou, Greece;
| | - Stelios K. Georgantzinos
- Laboratory for Advanced Materials, Structures and Digitalization, Department of Aerospace Science and Technology, National and Kapodistrian University of Athens, Evripus Campus, 34400 Psachna, Greece
- Correspondence:
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39
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High Precision 3D Printing for Micro to Nano Scale Biomedical and Electronic Devices. MICROMACHINES 2022; 13:mi13040642. [PMID: 35457946 PMCID: PMC9033068 DOI: 10.3390/mi13040642] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/18/2022] [Revised: 04/11/2022] [Accepted: 04/16/2022] [Indexed: 12/12/2022]
Abstract
Three dimensional printing (3DP), or additive manufacturing, is an exponentially growing process in the fabrication of various technologies with applications in sectors such as electronics, biomedical, pharmaceutical and tissue engineering. Micro and nano scale printing is encouraging the innovation of the aforementioned sectors, due to the ability to control design, material and chemical properties at a highly precise level, which is advantageous in creating a high surface area to volume ratio and altering the overall products’ mechanical and physical properties. In this review, micro/-nano printing technology, mainly related to lithography, inkjet and electrohydrodynamic (EHD) printing and their biomedical and electronic applications will be discussed. The current limitations to micro/-nano printing methods will be examined, covering the difficulty in achieving controlled structures at the miniscule micro and nano scale required for specific applications.
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40
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Lv G, Tian H, Shao J, Yu D. Pattern formation in thin polymeric films via electrohydrodynamic patterning. RSC Adv 2022; 12:9681-9697. [PMID: 35424937 PMCID: PMC8959450 DOI: 10.1039/d2ra01109c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/19/2022] [Accepted: 03/21/2022] [Indexed: 11/21/2022] Open
Abstract
The free surface of a thin polymeric film is often unstable and deforms into various micro-/nano-patterns under an externally applied electric field. This paper reviews a recent patterning technique, electrohydrodynamic patterning (EHDP), a straightforward, cost-effective and contactless bottom-up method. The theoretical and numerical studies of EHDP are shown. How the characteristic wavelength and the characteristic time depend on both the external conditions (such as voltage, film thickness, template-substrate spacing) and the initial polymer properties (such as rheological property, electrical property and surface tension) is theoretically and experimentally discussed. Various possible strategies for fabricating high-aspect-ratio or hierarchical patterns are theoretically and experimentally reviewed. Aligning and ordering of the anisotropic polymers by EHDP is emphasized. A perspective, including novelty and limitations of the methods, particularly in comparison to some conventional patterning techniques, and a possible future direction of research, is presented.
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Affiliation(s)
- Guowei Lv
- School of Chemistry, State Key Laboratory of Electrical Insulation and Power Equipments, MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, Xi'an Jiaotong University Xi'an 710049 Shaanxi P. R. China
- Xi'an Aerospace Chemical Propulsion Co., Ltd. Xi'an 710025 Shaanxi P. R. China
| | - Hongmiao Tian
- State Key Laboratory of Manufacturing Systems Engineering, Xi'an Jiaotong University Xi'an 710049 Shaanxi P. R. China
| | - Jinyou Shao
- State Key Laboratory of Manufacturing Systems Engineering, Xi'an Jiaotong University Xi'an 710049 Shaanxi P. R. China
| | - Demei Yu
- School of Chemistry, State Key Laboratory of Electrical Insulation and Power Equipments, MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, Xi'an Jiaotong University Xi'an 710049 Shaanxi P. R. China
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41
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Park Y, Yun I, Chung WG, Park W, Lee DH, Park J. High-Resolution 3D Printing for Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104623. [PMID: 35038249 PMCID: PMC8922115 DOI: 10.1002/advs.202104623] [Citation(s) in RCA: 30] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2021] [Revised: 12/04/2021] [Indexed: 05/17/2023]
Abstract
The ability to form arbitrary 3D structures provides the next level of complexity and a greater degree of freedom in the design of electronic devices. Since recent progress in electronics has expanded their applicability in various fields in which structural conformability and dynamic configuration are required, high-resolution 3D printing technologies can offer significant potential for freeform electronics. Here, the recent progress in novel 3D printing methods for freeform electronics is reviewed, with providing a comprehensive study on 3D-printable functional materials and processes for various device components. The latest advances in 3D-printed electronics are also reviewed to explain representative device components, including interconnects, batteries, antennas, and sensors. Furthermore, the key challenges and prospects for next-generation printed electronics are considered, and the future directions are explored based on research that has emerged recently.
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Affiliation(s)
- Young‐Geun Park
- Department of Materials Science and EngineeringYonsei UniversitySeoul03722Republic of Korea
- Center for NanomedicineInstitute for Basic Science (IBS)Seoul03722Republic of Korea
- Graduate Program of Nano Biomedical Engineering (NanoBME)Advanced Science InstituteYonsei UniversitySeoul03722Republic of Korea
| | - Insik Yun
- Department of Materials Science and EngineeringYonsei UniversitySeoul03722Republic of Korea
- Center for NanomedicineInstitute for Basic Science (IBS)Seoul03722Republic of Korea
- Graduate Program of Nano Biomedical Engineering (NanoBME)Advanced Science InstituteYonsei UniversitySeoul03722Republic of Korea
| | - Won Gi Chung
- Department of Materials Science and EngineeringYonsei UniversitySeoul03722Republic of Korea
- Center for NanomedicineInstitute for Basic Science (IBS)Seoul03722Republic of Korea
- Graduate Program of Nano Biomedical Engineering (NanoBME)Advanced Science InstituteYonsei UniversitySeoul03722Republic of Korea
| | - Wonjung Park
- Department of Materials Science and EngineeringYonsei UniversitySeoul03722Republic of Korea
- Center for NanomedicineInstitute for Basic Science (IBS)Seoul03722Republic of Korea
- Graduate Program of Nano Biomedical Engineering (NanoBME)Advanced Science InstituteYonsei UniversitySeoul03722Republic of Korea
| | - Dong Ha Lee
- Department of Materials Science and EngineeringYonsei UniversitySeoul03722Republic of Korea
- Center for NanomedicineInstitute for Basic Science (IBS)Seoul03722Republic of Korea
- Graduate Program of Nano Biomedical Engineering (NanoBME)Advanced Science InstituteYonsei UniversitySeoul03722Republic of Korea
| | - Jang‐Ung Park
- Department of Materials Science and EngineeringYonsei UniversitySeoul03722Republic of Korea
- Center for NanomedicineInstitute for Basic Science (IBS)Seoul03722Republic of Korea
- Graduate Program of Nano Biomedical Engineering (NanoBME)Advanced Science InstituteYonsei UniversitySeoul03722Republic of Korea
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42
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Zhang W, Du J, Wei Q, Zhang D, Pei S, Tong B, Liu Z, Liang Y, Cheng HM, Ren W. Fabrication of Large-Area Uniform Nanometer-Thick Functional Layers and Their Stacks for Flexible Quantum Dot Light-Emitting Diodes. SMALL METHODS 2022; 6:e2101030. [PMID: 35174984 DOI: 10.1002/smtd.202101030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2021] [Revised: 11/14/2021] [Indexed: 06/14/2023]
Abstract
Large-area fabrication and stacking of various nanometer-thick functional layers from solutions is essentially important for the construction of flexible thin-film optoelectronic devices, but very challenging. The existing fabrication methods suffer from either non-uniformity caused by the coffee-ring effect or serious solution waste (excess of 90% for spin coating), and are hard to scale up and create stacks. Here, it is shown that centrifugal casting is a universal, scalable, and efficient method to fabricate uniform nanometer-thick films and their stacks of various materials. The coffee-ring effect is effectively suppressed, the solution utilization ratio is higher than ≈61%, and the films/stacks show a smooth surface/high-quality interface. Using this method, flexible quantum dot light-emitting diode displays with uniform luminance in a large lighting area of ≈115 cm2 that have not been achieved even on rigid substrates by the existing methods, are realized. This efficient and low-cost solution processing method paves a way for large-area fabrication of various flexible thin-film optoelectronic devices.
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Affiliation(s)
- Weimin Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Jinhong Du
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Qinwei Wei
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Dingdong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Songfeng Pei
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Bo Tong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Zhibo Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Yan Liang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
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43
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Chen L, Qin Z, Chen S. Ultrahigh Resolution Pixelated Top-Emitting Quantum-Dot Light-Emitting Diodes Enabled by Color-Converting Cavities. SMALL METHODS 2022; 6:e2101090. [PMID: 35041269 DOI: 10.1002/smtd.202101090] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2021] [Revised: 10/09/2021] [Indexed: 06/14/2023]
Abstract
Realizing pixelated quantum-dot light-emitting diodes for high-resolution displays remains a challenging task because of the difficulty of fine patterning the quantum-dots. In this study, instead of patterning the quantum-dots, the color-converting cavities for realizing high-resolution pixelated emission are developed. By defining the thicknesses of the transparent electrodes (phase tuning layers) through a photolithographic process, the resultant cavities can selectively convert the unpatterned quantum-dot white emission as saturated red, green, and blue emission with a brightness of 22170, 51930, and 3064 cd m-2 at 5.5 V, respectively. The developed method enables the realization of ultrahigh density red, green, and blue emission for a display with a resolution of ≈1700 pixel-per-inch and a color gamut of 111% National Television System Committee; together with the advantages of quantum-dot patterning-free, color-filter-free and high brightness, the demonstrated architecture could find potential applications in various displays ranging from cell phone to emerging virtual reality and augmented reality displays.
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Affiliation(s)
- Lianna Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Zhiyuan Qin
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Shuming Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen, 518055, P. R. China
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44
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Zhou X, Ren L, Liu Q, Song Z, Wu Q, He Y, Li B, Ren L. Advances in Field-Assisted 3D Printing of Bio-Inspired Composites: From Bioprototyping to Manufacturing. Macromol Biosci 2021; 22:e2100332. [PMID: 34784100 DOI: 10.1002/mabi.202100332] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2021] [Revised: 10/21/2021] [Indexed: 02/04/2023]
Abstract
Biocomposite systems evolve to superior structural strategies in adapting to their living environments, using limited materials to form functionality superior to their inherent properties. The synergy of physical-field and Three-dimensional (3D) printing technologies creates unprecedented opportunities that overcome the limitations of traditional manufacturing methods and enable the precise replication of bio-enhanced structures. Here, an overview of typical structural designs in biocomposite systems, their functions and properties, are provided and the recent advances in bio-inspired composites using mechanical, electrical, magnetic, and ultrasound-field-assisted 3D printing techniques are highlighted. Finally, in order to realize the preparation of bionic functional devices and equipment with more superior functions, here an outlook on the development of field-assisted 3D printing technology from three aspects are provided: Materials, technology, and post-processing.
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Affiliation(s)
- Xueli Zhou
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, 130022, P. R. China
| | - Luquan Ren
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, 130022, P. R. China
| | - Qingping Liu
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, 130022, P. R. China
| | - Zhengyi Song
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, 130022, P. R. China
| | - Qian Wu
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, 130022, P. R. China
| | - Yulin He
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, 130022, P. R. China
| | - Bingqian Li
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, 130022, P. R. China
| | - Lei Ren
- Key Laboratory of Bionic Engineering (Ministry of Education), Jilin University, Changchun, 130022, P. R. China.,School of Mechanical, Aerospace and Civil Engineering, University of Manchester, Manchester, M13 9PL, UK
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45
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Xu W, Jambhulkar S, Ravichandran D, Zhu Y, Kakarla M, Nian Q, Azeredo B, Chen X, Jin K, Vernon B, Lott DG, Cornella JL, Shefi O, Miquelard-Garnier G, Yang Y, Song K. 3D Printing-Enabled Nanoparticle Alignment: A Review of Mechanisms and Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100817. [PMID: 34176201 DOI: 10.1002/smll.202100817] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2021] [Revised: 04/05/2021] [Indexed: 05/12/2023]
Abstract
3D printing (additive manufacturing (AM)) has enormous potential for rapid tooling and mass production due to its design flexibility and significant reduction of the timeline from design to manufacturing. The current state-of-the-art in 3D printing focuses on material manufacturability and engineering applications. However, there still exists the bottleneck of low printing resolution and processing rates, especially when nanomaterials need tailorable orders at different scales. An interesting phenomenon is the preferential alignment of nanoparticles that enhance material properties. Therefore, this review emphasizes the landscape of nanoparticle alignment in the context of 3D printing. Herein, a brief overview of 3D printing is provided, followed by a comprehensive summary of the 3D printing-enabled nanoparticle alignment in well-established and in-house customized 3D printing mechanisms that can lead to selective deposition and preferential orientation of nanoparticles. Subsequently, it is listed that typical applications that utilized the properties of ordered nanoparticles (e.g., structural composites, heat conductors, chemo-resistive sensors, engineered surfaces, tissue scaffolds, and actuators based on structural and functional property improvement). This review's emphasis is on the particle alignment methodology and the performance of composites incorporating aligned nanoparticles. In the end, significant limitations of current 3D printing techniques are identified together with future perspectives.
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Affiliation(s)
- Weiheng Xu
- The Polytechnic School (TPS), Ira A. Fulton Schools for Engineering, Arizona State University, 6075 S. Innovation Way West, Mesa, AZ, 85212, USA
| | - Sayli Jambhulkar
- The Polytechnic School (TPS), Ira A. Fulton Schools for Engineering, Arizona State University, 6075 S. Innovation Way West, Mesa, AZ, 85212, USA
| | - Dharneedar Ravichandran
- The Polytechnic School (TPS), Ira A. Fulton Schools for Engineering, Arizona State University, 6075 S. Innovation Way West, Mesa, AZ, 85212, USA
| | - Yuxiang Zhu
- The Polytechnic School (TPS), Ira A. Fulton Schools for Engineering, Arizona State University, 6075 S. Innovation Way West, Mesa, AZ, 85212, USA
| | - Mounika Kakarla
- Department of Materials Science and Engineering, Ira A. Fulton Schools for Engineering, Arizona State University, Tempe, 501 E. Tyler Mall, Tempe, AZ, 85287, USA
| | - Qiong Nian
- Department of Mechanical Engineering, and Multi-Scale Manufacturing Material Processing Lab (MMMPL), Ira A. Fulton Schools for Engineering, Arizona State University, 501 E. Tyler Mall, Tempe, AZ, 85287, USA
| | - Bruno Azeredo
- The Polytechnic School (TPS), Ira A. Fulton Schools for Engineering, Arizona State University, 6075 S. Innovation Way West, Mesa, AZ, 85212, USA
| | - Xiangfan Chen
- Advanced Manufacturing and Functional Devices (AMFD) Laboratory, Ira A. Fulton Schools for Engineering, Arizona State University, 6075 Innovation Way W., Mesa, AZ, 85212, USA
| | - Kailong Jin
- Department of Chemical Engineering, School for Engineering Matter, Transport and Energy (SEMTE), and Biodesign Institute Center for Sustainable Macromolecular Materials and Manufacturing (BCSM3), Arizona State University, 501 E. Tyler St., Tempe, AZ, 85287, USA
| | - Brent Vernon
- Department of Biomedical Engineering, Biomaterials Lab, School of Biological and Health Systems Engineering, Arizona State University, 427 E Tyler Mall, Tempe, AZ, 85281, USA
| | - David G Lott
- Department Otolaryngology, Division of Laryngology, College of Medicine, and Mayo Clinic Arizona Center for Regenerative Medicine, 13400 E Shea Blvd, Scottsdale, AZ, 85259, USA
| | - Jeffrey L Cornella
- Professor of Obstetrics and Gynecology, Mayo Clinic College of Medicine, Division of Gynecologic Surgery, Mayo Clinic, 13400 E Shea Blvd, Scottsdale, AZ, 85259, USA
| | - Orit Shefi
- Department of Engineering, Neuro-Engineering and Regeneration Laboratory, Bar Ilan Institute of Nanotechnologies and Advanced Materials, Bar-Ilan University, Building 1105, Ramat Gan, 52900, Israel
| | - Guillaume Miquelard-Garnier
- laboratoire PIMM, UMR 8006, Arts et Métiers Institute of Technology, CNRS, CNAM, Hesam University, 151 boulevard de l'Hôpital, Paris, 75013, France
| | - Yang Yang
- Additive Manufacturing & Advanced Materials Lab, Department of Mechanical Engineering, San Diego State University, 5500 Campanile Drive, San Diego, CA, 92182-1323, USA
| | - Kenan Song
- Department of Manufacturing Engineering, Advanced Materials Advanced Manufacturing Laboratory (AMAML), Ira A. Fulton Schools for Engineering, Arizona State University, 6075 Innovation Way W., Mesa, AZ, 85212, USA
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Tang X, Jo Y, Kwon HJ, Wu K, Li Z, Kim S, Park CE, An TK, Lee J, Kim SH. Electrohydrodynamic-Jet-Printed Cinnamate-Fluorinated Cross-Linked Polymeric Dielectrics for Flexible and Electrically Stable Operating Organic Thin-Film Transistors and Integrated Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50149-50162. [PMID: 34636542 DOI: 10.1021/acsami.1c08562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Herein, printable polymer series containing different portions of cinnamate and perfluorinated phenyl functionalities, namely, polyperfluorostyrene-co-poly(vinylbenzyl cinnamates) (PFS-co-PVBCi (x:y)) copolymers, were synthesized and applied as gate dielectrics for organic thin-film transistors (OTFTs). The polymeric dielectrics were successfully printed via electrostatic force-assisted dispensing mode of electrohydrodynamic jet printing. The dielectric characteristics of the printed polymers, such as surface energy, dielectric constant, leakage current, atomic depth profiles, and deposited semiconducting layer characteristics, were clearly identified. In particular, the difference in driving stability of OTFTs according to the type of polymer was analyzed in detail and a possible mechanism was proposed. Results suggested that PFS-co-PVBCi (3:7) led to optimized consequences, yielding an almost negligible Vth shift under continuous bias stress. Through this, we successfully implemented flexible OTFT and logic devices using printed PFS-co-PVBCi (3:7) dielectrics with stable operation properties. Therefore, we believe that this study will facilitate the printing and synthesis of polymer dielectrics to produce printed and flexible OTFTs.
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Affiliation(s)
- Xiaowu Tang
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Yohan Jo
- Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Hyeok-Jin Kwon
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Kaibin Wu
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Zhijun Li
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Seonghyeon Kim
- Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Chan Eon Park
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Tae Kyu An
- Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Jihoon Lee
- Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Se Hyun Kim
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
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Ahn J, Jeon S, Woo HK, Bang J, Lee YM, Neuhaus SJ, Lee WS, Park T, Lee SY, Jung BK, Joh H, Seong M, Choi JH, Yoon HG, Kagan CR, Oh SJ. Ink-Lithography for Property Engineering and Patterning of Nanocrystal Thin Films. ACS NANO 2021; 15:15667-15675. [PMID: 34495639 DOI: 10.1021/acsnano.1c04772] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Next-generation devices and systems require the development and integration of advanced materials, the realization of which inevitably requires two separate processes: property engineering and patterning. Here, we report a one-step, ink-lithography technique to pattern and engineer the properties of thin films of colloidal nanocrystals that exploits their chemically addressable surface. Colloidal nanocrystals are deposited by solution-based methods to form thin films and a local chemical treatment is applied using an ink-printing technique to simultaneously modify (i) the chemical nature of the nanocrystal surface to allow thin-film patterning and (ii) the physical electronic, optical, thermal, and mechanical properties of the nanocrystal thin films. The ink-lithography technique is applied to the library of colloidal nanocrystals to engineer thin films of metals, semiconductors, and insulators on both rigid and flexible substrates and demonstrate their application in high-resolution image replications, anticounterfeit devices, multicolor filters, thin-film transistors and circuits, photoconductors, and wearable multisensors.
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Affiliation(s)
- Junhyuk Ahn
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Sanghyun Jeon
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Ho Kun Woo
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Junsung Bang
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Yong Min Lee
- Department of Semiconductor Systems Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Steven J Neuhaus
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Woo Seok Lee
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Taesung Park
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Sang Yeop Lee
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Byung Ku Jung
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Hyungmok Joh
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Mingi Seong
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Ji-Hyuk Choi
- Mineral Utilization Convergence Research Center, Korea Institute of Geoscience and Mineral Resources, Daejeon 34132, Republic of Korea
| | - Ho Gyu Yoon
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Cherie R Kagan
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
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Tip-Viscid Electrohydrodynamic Jet 3D Printing of Composite Osteochondral Scaffold. NANOMATERIALS 2021; 11:nano11102694. [PMID: 34685135 PMCID: PMC8539201 DOI: 10.3390/nano11102694] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/16/2021] [Revised: 10/08/2021] [Accepted: 10/08/2021] [Indexed: 01/04/2023]
Abstract
A novel method called tip-viscid electrohydrodynamic jet printing (TVEJ), which produces a viscous needle tip jet, was presented to fabricate a 3D composite osteochondral scaffold with controllability of fiber size and space to promote cartilage regeneration. The tip-viscid process, by harnessing the combined effects of thermal, flow, and electric fields, was first systematically investigated by simulation analysis. The influences of process parameters on printing modes and resolutions were investigated to quantitatively guide the fabrication of various structures. 3D architectures with high aspect ratio and good interlaminar bonding were printed, thanks to the stable fine jet and its predictable viscosity. 3D composite osteochondral scaffolds with controllability of architectural features were fabricated, facilitating ingrowth of cells, and eventually inducing homogeneous cell proliferation. The scaffold’s properties, which included chemical composition, wettability, and durability, were also investigated. Feasibility of the 3D scaffold for cartilage tissue regeneration was also proven by in vitro cellular activities.
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Electric Field-Driven Liquid Metal Droplet Generation and Direction Manipulation. MICROMACHINES 2021; 12:mi12091131. [PMID: 34577774 PMCID: PMC8471384 DOI: 10.3390/mi12091131] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/02/2021] [Revised: 09/16/2021] [Accepted: 09/17/2021] [Indexed: 11/28/2022]
Abstract
A gallium-based liquid metal got high attention recently, due to the excellent material properties that are useful in various research areas. We report here on electric field-induced liquid metal droplet generation and falling direction manipulation. The well-analyzed electro-hydrodynamic method is a selectable way to control the liquid metal, as the liquid metal is conductive. The electric field-induced liquid metal manipulation can be affected by the flow rate (0.05~0.2 mL/min), voltage (0~7 kV), and distance (15 and 30 mm) between electrodes, which changes the volume of the electric field-induced generated liquid metal droplet and the number of the generated droplets. When the electric field intensity increases or the flow rate increases, the generated droplet volume decreases, and the number of droplets increases. With the highest voltage of 7 kV with 15 mm between electrodes at the 0.2 mL/min flow rate, the lowest volume and the largest number of the generated droplets for 10 s were ~10 nL and 541, respectively. Additionally, we controlled the direction of the generated droplet by changing the electric field. The direction of the liquid metal droplet was controlled with the maximum angle of ~12°. Moreover, we exhibited a short circuit demonstration by controlling the volume or falling direction of the generated liquid metal droplet with an applied electric field.
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50
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Kim GH, Lee J, Lee JY, Han J, Choi Y, Kang CJ, Kim KB, Lee W, Lim J, Cho SY. High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43075-43084. [PMID: 34463100 DOI: 10.1021/acsami.1c11898] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
High-resolution patterning of quantum dot (QD) films is one of the preconditions for the practical use of QD-based emissive display platforms. Recently, inkjet printing and transfer printing have been actively developed; however, high-resolution patterning is still limited owing to nozzle-clogging issues and coffee ring effects during the inkjet printing and kinetic parameters such as pickup and peeling speed during the transfer process. Consequently, employing direct optical lithography would be highly beneficial owing to its well-established process in the semiconductor industry; however, exposing the photoresist (PR) on top of the QD film deteriorates the QD film underneath. This is because a majority of the solvents for PR easily dissolve the pre-existing QD films. In this study, we present a conventional optical lithography process to obtain solvent resistance by reacting the QD film surface with diethylzinc (DEZ) precursors using atomic layer deposition. It was confirmed that, by reacting the QD surface with DEZ and coating PR directly on top of the QD film, a typical photolithography process can be performed to generate a red/green/blue pixel of 3000 ppi or more. QD electroluminescence devices were fabricated with all primary colors of QDs; moreover, compared to reference QD-LED devices, the patterned QD-LED devices exhibited enhanced brightness and efficiency.
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Affiliation(s)
| | | | | | | | | | | | - Ki-Bum Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
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