Electroluminescence from suspended and on-substrate metallic single-walled carbon nanotubes

Auger Suppression of Incandescence in Individual Suspended Carbon Nanotube pn-Junctions

There are various mechanisms of light emission in carbon nanotubes (CNTs), which give rise to a wide range of spectral characteristics that provide important information. Here we report suppression of incandescence via Auger recombination in suspended carbon nanotube pn-junctions generated from dual-gate CNT field-effect transistor (FET) devices. By applying equal and opposite voltages to the gate electrodes (i.e., V_g1 = -V_g2), we create a pn-junction within the CNT. Under these gating conditions, we observe a sharp peak in the incandescence intensity around zero applied gate voltage, where the intrinsic region has the largest spatial extent. Here, the emission occurs under high electrical power densities of around 0.1 MW/cm² (or 6 μW) and arises from thermal emission at elevated temperatures above 800 K (i.e., incandescence). It is somewhat surprising that this thermal emission intensity is so sensitive to the gating conditions, and we observe a 1000-fold suppression of light emission between V_g1 = 0 and 15 V, over a range in which the electrical power dissipated in the nanotube is roughly constant. This behavior is understood on the basis of Auger recombination, which suppresses light emission by the excitation of free carriers. Based on the calculated carrier density and band profiles, the length of the intrinsic region drops by a factor of 7-25× over the range from |V_g| = 0 to 15 V. We, therefore, conclude that the light emission intensity is significantly dependent on the free carrier density profile and the size of the intrinsic region in these CNT devices.

Antenna-enhanced optoelectronic probing of carbon nanotubes

We report on the first antenna-enhanced optoelectronic microscopy studies on nanoscale devices. By coupling the emission and excitation to a scanning optical antenna, we are able to locally enhance the electroluminescence and photocurrent along a carbon nanotube device. We show that the emission source of the electroluminescence can be pointlike with a spatial extension below 20 nm. Topographic and antenna-enhanced photocurrent measurements reveal that the emission takes place at the location of highest local electric field indicating that the mechanism behind the emission is the radiative decay of excitons created via impact excitation.

Aligned carbon nanotubes: from controlled synthesis to electronic applications

Single-wall carbon nanotubes (SWNTs) possess superior geometrical, electronic, chemical, thermal, and mechanical properties and are very attractive for applications in electronic devices and circuits. To make this a reality, the nanotube orientation, density, diameter, electronic property, and even chirality should be well controlled. This Feature article focuses on recent achievements researchers have made on the controlled growth of horizontally aligned SWNTs and SWNT arrays on substrates and their electronic applications. Principles and strategies to control the morphology, structure, and properties of SWNTs are reviewed in detail. Furthermore, electrical properties of field-effect transistors fabricated on both individual SWNTs and aligned SWNT arrays are discussed. State-of-the-art electronic devices and circuits based on aligned SWNTs and SWNT arrays are also highlighted.

Electroluminescence in aligned arrays of single-wall carbon nanotubes with asymmetric contacts

High quantum efficiencies and low current thresholds are important properties for all classes of semiconductor light emitting devices (LEDs), including nanoscale emitters based on single wall carbon nanotubes (SWNTs). Among the various configurations that can be considered in SWNT LEDs, two terminal geometries with asymmetric metal contacts offer the simplest solution. In this paper, we study, experimentally and theoretically, the mechanisms of electroluminescence in devices that adopt this design and incorporate perfectly aligned, horizontal arrays of individual SWNTs. The results suggest that exciton mediated electron-hole recombination near the lower work-function contact is the dominant source of photon emission. High current thresholds for electroluminescence in these devices result from diffusion and quenching of excitons near the metal contact.

Biomolecule-directed assembly of self-supported, nanoporous, conductive, and luminescent single-walled carbon nanotube scaffolds

A single-walled carbon nanotube self-suspended network of exceptionally low density is formed by DNA-streptavidin-assisted assembly where the DNA complex serves as a cross-shaped point connector. The macroscopic nanotube aerogel is conductive and luminescent and presents an excellent scaffold for subsequent functionalization. For example, platinum and titanium dioxide coating of the nanotube network is demonstrated.

Thermal emission spectra from individual suspended carbon nanotubes

We study the thermal emission spectra of individual suspended carbon nanotubes induced by electrical heating. Semiconducting and metallic devices exhibit different spectra, based on their distinctive band structures. These spectra are compared with the ideal blackbody emission spectrum. In the visible wavelength range, the thermal emission spectra of semiconducting devices agree well with Planck's law, while the spectra of metallic devices show an additional peak between 1.5 and 1.9 eV. In the near-infrared wavelength range, the semiconducting nanotubes exhibit a peak around 1 eV. These additional peaks are attributed to the E11M and E22SC transitions that are thermally driven under these high applied bias voltages. These peaks show a strong polarization dependence, while the blackbody tail is unpolarized, which provides further evidence for electron-hole recombination in thermal emission. For semiconducting devices, the temperature of the nanotube is fit to Planck's law and compared with the temperatures obtained from the G band and 2D band Raman downshifts, as well as the anti-Stokes/Stokes intensity ratio. For devices showing thermal non-equilibrium, the electron temperature agrees well with G+ downshift but deviates from G_ downshift.

Short-wavelength electroluminescence from single-walled carbon nanotubes with high bias voltage

Short-wavelength electroluminescence (EL) emission is observed from unipolar and ambipolar carbon nanotube field-effect transistors (CNFETs) under high bias voltage. EL measurements were carried out with an unsuspended single-walled carbon nanotube (SWNT) in high vacuum to prevent the oxidation damage induced by current heating. Short-wavelength emission under high bias voltage is obtained because of the Schottky barrier reduction and the electric field increase in a SWNT. The simultaneous measurements of transport and EL spectra revealed the excitation mechanism of impact excitation or electron and hole injection dependent on the conduction type of unipolar or ambipolar characteristics. In addition to the EL emission, blackbody radiation was also observed in a p-type CNFET. Taking into account the device temperature estimated from blackbody radiation, the contribution of impact excitation and thermal effect to the exciton production rate was evaluated.

High-performance carbon nanotube light-emitting diodes with asymmetric contacts

Electroluminescence (EL) measurements are carried out on a two-terminal carbon nanotube (CNT) based light-emitting diode (LED). This two-terminal device is composed of an asymmetrically contacted semiconducting single-walled carbon nanotube (SWCNT). On the one end the SWCNT is contacted with Sc and on the other end with Pd. At large forward bias, with the Sc contact being grounded, electrons can be injected barrier-free into the conduction band of the SWCNT from the Sc contact and holes be injected into the valence band from the Pd electrode. The injected electrons and holes recombine radiatively in the SWCNT channel yielding a narrowly peaked emission peak with a full width at half-maximum of about 30 meV. Detailed EL spectroscopy measurements show that the emission is excitons dominated process, showing little overlap with that associated with the continuum states. The performance of the LED is compared with that based on a three-terminal field-effect transistor (FET) that is fabricated on the same SWCNT. The conversion efficiency of the two-terminal diode is shown to be more than three times higher than that of the FET based device, and the emission peak of the LED is much narrower and operation voltage is lower.

The polarized carbon nanotube thin film LED

We demonstrate a light emitting p-i-n diode made of a highly aligned film of separated (99%) semiconducting carbon nanotubes, self-assembled from solution. By using a split gate technique, we create p- and n-doped regions in the nanotube film that are separated by a micron-wide gap. We inject p- and n-type charge carriers into the device channel from opposite contacts and investigate the radiative recombination using optical micro-spectroscopy. We find that the threshold-less light generation efficiency in the intrinsic carbon nanotube film segment can be enhanced by increasing the potential drop across the junction, demonstrating the LED-principle in a carbon nanotube film for the first time. The device emits infrared light that is polarized along the long axes of the carbon nanotubes that form the aligned film.

Phonon-assisted electroluminescence from metallic carbon nanotubes and graphene

We report on light emission from biased metallic single-wall carbon nanotube (SWNT), multiwall carbon nanotube (MWNT) and few-layer graphene (FLG) devices. SWNT devices were assembled from tubes with different diameters in the range 0.7-1.5 nm. They emit light in the visible spectrum with peaks at 1.4 and 1.8 eV. Similar peaks are observed for MWNT and FLG devices. We propose that this light emission is due to phonon-assisted radiative decay from populated pi* band states at the M point to the Fermi level at the K point. Since for most carbon nanotubes as well as for graphene the energy of unoccupied states at the M point is close to 1.6 eV, the observation of two emission peaks at approximately 1.6 +/- approximately 0.2 eV could indicate radiative decay under emission or absorption of optical phonons, respectively.

Efficient narrow-band light emission from a single carbon nanotube p-n diode

Electrically driven light emission from carbon nanotubes could be used in nanoscale lasers and single-photon sources, and has therefore been the focus of much research. However, high electric fields and currents have either been necessary for electroluminescence, or have been an undesired side effect, leading to high power requirements and low efficiencies. Furthermore, electroluminescent linewidths have been broad enough to obscure the contributions of individual optical transitions. Here, we report electrically induced light emission from individual carbon nanotube p-n diodes. A new level of control over electrical carrier injection is achieved, reducing power dissipation by a factor of up to 1,000, and resulting in zero threshold current, negligible self-heating and high carrier-to-photon conversion efficiencies. Moreover, the electroluminescent spectra are significantly narrower ( approximately 35 meV) than in previous studies, allowing the identification of emission from free and localized excitons.