Optical absorption enhancement in silicon nanohole arrays for solar photovoltaics

Mimicking the retinal neuron functions by a photoresponsive single transistor with a double gate

To realize a low-cost neuromorphic visual system, employing an artificial neuron capable of mimicking the retinal neuron functions is essential. A photoresponsive single transistor neuron composed of a vertical silicon nanowire is proposed. Similar to retinal neurons, various photoresponsive characteristics of the single transistor neuron can be modulated by light intensity as well as wavelength and have a high responsivity to green light like the human eye. The device is designed with a cylindrical surrounding double-gate structure, enclosed by an independently controlled outer gate and inner gate. The outer gate has the function of selectively inhibiting neuron activity, which can mimic lateral inhibition of amacrine cells to ganglion cells, and the inner gate can be utilized for the adjustment of the firing threshold voltage, which can be used to mimic the regulation of photoresponsivity by horizontal cells for adaptive visual perception. Furthermore, a myelination function that controls the speed of information transmission is obtained according to the inherent asymmetric source/drain structure of a vertical silicon nanowire. This work can enable photoresponsive neuronal function using only a single transistor, providing a promising hardware implementation for building miniaturized neuromorphic vision systems at low cost.

Optical characteristics of a monolayer of identical spherical particles in an absorbing host medium

The problem of light interaction with a 2D ensemble of homogeneous spherical particles embedded into an unbounded homogeneous absorbing host medium is considered. Based on the statistical approach, the equations are derived to characterize optical response of such a system with taking into account multiple scattering of light. Numerical data are presented for the spectral behavior of coherent transmission and reflection, incoherent scattering, and absorption coefficients of thin dielectric, semiconductor, and metal films containing a monolayer of particles with various spatial organization. The results are compared with the characteristics of the inverse structure: particles consist of the host medium material and vice versa. Data for the redshift of the surface plasmon resonance of the monolayer of gold (Au) nanoparticles in the fullerene (C ₆₀) matrix are presented as a function of the monolayer filling factor. They are in qualitative agreement with the known experimental results. The findings have potential applications in the development of new electro-optical and photonic devices.

Optical performance analysis of InP nanostructures for photovoltaic applications

In this article, we have performed a comparative analysis of six different types of nanostructures that can improve photon management for photovoltaic applications. These nanostructures act as anti-reflective structures by improving the absorption characteristics and tailoring the optoelectronic properties of the associated devices. The absorption enhancement in indium phosphide (InP) and silicon (Si) based cylindrical nanowires (CNWs) and rectangular nanowires (RNWs), truncated nanocones (TNCs), truncated nanopyramids (TNPs), inverted truncated nanocones (ITNCs), and inverted truncated nanopyramids (ITNPs) are computed using the finite element method (FEM) based commercial COMSOL Multiphysics package. The influence of geometrical dimensions of the investigated nanostructures such as period (P), diameter (D), width (W), filling ratio (FR), bottom W and D (W_bot/D_bot), and top W and D (W_top/D_top) on the optical performance are analyzed in detail. Optical short circuit current density (J_sc) is computed using the absorption spectra. The results of numerical simulations indicate that InP nanostructures are optically superior to Si nanostructures. In addition to this, the InP TNP generates an optical short circuit current density (J_sc) of 34.28 mA cm⁻², which is ∼10 mA cm⁻² higher than its Si counterpart. The effect of incident angle on the ultimate efficiency of the investigated nanostructures in transverse electric (TE) and transverse magnetic (TM) modes is also explored. Theoretical insights into the design strategies of different nanostructures proposed in this article will act as a benchmark for choosing the device dimensions of appropriate nanostructures for the fabrication of efficient photovoltaic devices.

The optical performance of different indium phosphide (InP) nanostructures are investigated using Wave Optics Module of COMSOL Multiphysics. Our results indicate that InP based nanostructures outperform silicon based nanostructures.

Efficient Diode Performance with Improved Effective Carrier Lifetime and Absorption Using Bismuth Nanoparticles Passivated Silicon Nanowires

In this paper, we report a novel design of bismuth nanoparticle-passivated silicon nanowire (Bi@SiNW) heterojunction composites for high diode performances and improved effective carrier lifetime and absorption properties. High-density vertically aligned SiNWs were fabricated using a simple and cost-effective silver-assisted chemical etching method. Bi nanoparticles (BiNPs) were then anchored in these nanowires by a straightforward thermal evaporation technique. The systematic study of the morphology, elemental composition, structure, and crystallinity provided evidence for the synergistic effect between SiNWs and BiNPs. Bi@SiNWs exhibited an eight-fold enhancement of the first-order Raman scattering compared to bare silicon. Current-voltage characteristics highlighted that bismuth treatment dramatically improved the rectifying behavior and diode parameters for Bi-passivated devices over Bi-free devices. Significantly, Bi wire-filling effectively increased the minority carrier lifetime and consequently reduced the surface recombination velocity, further indicating the benign role of Bi as a surface passivation coating. Furthermore, the near-perfect absorption property of up to 97% was achieved. The findings showed that a judicious amount of Bi coating is required. In this study the reasons behind the superior improvement in Bi@SiNW's overall properties were elucidated thoroughly. Thus, Bi@SiNW heterojunction nanocomposites could be introduced as a promising and versatile candidate for nanoelectronics, photovoltaics and optoelectronics.

Investigating the Absorption Spectra of a Plasmonic Metamaterial Absorber Based on Disc-in-Hole Nanometallic Structure

In this work, we present and explore the characteristics of a plasmonic metamaterial absorber based on a metal-insulator-metal functional stack. The proposed structure consists of glass "sandwiched" between a silver reflector and a titanium metallic disc, embedded inside a Ti periodic nano-hole array, as an outside layer. In the visible and infrared regimes, the optical absorption spectra of such structures have been investigated using the finite difference time domain method. The impact of modifying nano-hole and embedded disc diameters on the absorber's performance has been investigated. Changing these two distinct structural parameters tunes the coupling effect between the localized and propagating surface plasmons. The adequate bandwidth, average spectral absorption rate, and short circuit current density are calculated to determine the performance of the designated absorber. The proposed structure of the plasmonic metamaterial absorber reaches an average absorption of over 94% in a bandwidth of 0.81 µm and near-perfect absorption of 98% around the wavelength of 0.7 µm, with an almost 100% relative absorption bandwidth and 41 mA/cm² short circuit current density. In addition, the results show that the disc-in-hole absorber's structural parameters can be changed precisely and facilely to tailor to the absorption spectra.

Light-Trapping Electrode for the Efficiency Enhancement of Bifacial Perovskite Solar Cells

Antireflection and light-trapping coatings are important parts of photovoltaic architectures, which enable the reduction of parasitic optical losses, and therefore increase the power conversion efficiency (PCE). Here, we propose a novel approach to enhance the efficiency of perovskite solar cells using a light-trapping electrode (LTE) with non-reciprocal optical transmission, consisting of a perforated metal film covered with a densely packed array of nanospheres. Our LTE combines charge collection and light trapping, and it can replace classical transparent conducting oxides (TCOs) such as ITO or FTO, providing better optical transmission and conductivity. One of the most promising applications of our original LTE is the optimization of efficient bifacial perovskite solar cells. We demonstrate that with our LTE, the short-circuit current density and fill factor are improved for both front and back illumination of the solar cells. Thus, we observe an 11% improvement in the light absorption for the monofacial PSCs, and a 15% for the bifacial PSCs. The best theoretical results of efficiency for our PSCs are 27.9% (monofacial) and 33.4% (bifacial). Our study opens new prospects for the further efficiency enhancement for perovskite solar cells.

Atomically Dispersed Manganese on Biochar Derived from a Hyperaccumulator for Photocatalysis in Organic Pollution Remediation

Phytoremediation is a potentially cost-effective and environmentally friendly remediation method for environmental pollution. However, the safe treatment and resource utilization of harvested biomass has become a limitation in practical applications. To address this, a novel manganese-carbon-based single-atom catalyst (SAC) method has been developed based on the pyrolysis of a manganese hyperaccumulator, Phytolacca americana. In this method, manganese atoms are dispersed atomically in the carbon matrix and coordinate with N atoms to form a Mn-N₄ structure. The SAC developed exhibited a high photooxidation efficiency and excellent stability during the degradation of a common organic pollutant, rhodamine B. The Mn-N₄ site was the active center in the transformation of photoelectrons via the transfer of photoelectrons between adsorbed O₂ and Mn to produce reactive oxygen species, identified by in situ X-ray absorption fine structure spectroscopy and density functional theory calculations. This work demonstrates an approach that increases potential utilization of biomass during phytoremediation and provides a promising design strategy to synthesize cost-effective SACs for environmental applications.

Research Progress of Plasmonic Nanostructure-Enhanced Photovoltaic Solar Cells

Enhancement of the electromagnetic properties of metallic nanostructures constitute an extensive research field related to plasmonics. The latter term is derived from plasmons, which are quanta corresponding to longitudinal waves that are propagating in matter by the collective motion of electrons. Plasmonics are increasingly finding wide application in sensing, microscopy, optical communications, biophotonics, and light trapping enhancement for solar energy conversion. Although the plasmonics field has relatively a short history of development, it has led to substantial advancement in enhancing the absorption of the solar spectrum and charge carrier separation efficiency. Recently, huge developments have been made in understanding the basic parameters and mechanisms governing the application of plasmonics, including the effects of nanoparticles' size, arrangement, and geometry and how all these factors impact the dielectric field in the surrounding medium of the plasmons. This review article emphasizes recent developments, fundamentals, and fabrication techniques for plasmonic nanostructures while investigating their thermal effects and detailing light-trapping enhancement mechanisms. The mismatch effect of the front and back light grating for optimum light trapping is also discussed. Different arrangements of plasmonic nanostructures in photovoltaics for efficiency enhancement, plasmonics' limitations, and modeling performance are also deeply explored.

Designing transparent nanophotonic gratings for ultra-thin solar cells

Integration of a rear surface nanophotonic grating can increase photocurrent in ultra-thin solar cells. Transparent gratings formed of dielectric materials and high bandgap semiconductors can offer efficient diffraction with lower parasitic absorption than more widely studied metal/dielectric equivalents. In these systems, the maximum photocurrent which can be obtained for a grating made of a given combination of materials is shown to follow a simple empirical model based on the optical constants of these materials and independent of grating dimensions. The grating dimensions still require optimization in order to maximize the photocurrent for a given active layer thickness by balancing the effects of diffraction outside the front surface escape cone and the tuning of waveguide modes in long wavelength regions which are poorly absorbed in an ultra-thin film. The optimal grating pitch is shown to be of particular relevance for both effects, changing nonmonotonically as the absorber gets thicker in order to track favourable waveguide mode resonances at wavelengths near the absorber bandgap. These trends together with the empirical model for material selection drastically reduce the design space for highly efficient light trapping with transparent gratings.

Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different approaches to improve the QD photoresponse are under investigation. In this paper, we report on the fabrication and optical characterization of Ge/Si QD pin photodiodes integrated with photon-trapping microstructures for near-infrared photodetection. The photon traps represent vertical holes having 2D periodicity with a feature size of about 1 μm on the diode surface, which significantly increase the normal incidence light absorption of Ge/Si QDs due to generation of lateral optical modes in the wide telecommunication wavelength range. For a hole array periodicity of 1700 nm and hole diameter of 1130 nm, the responsivity of the photon-trapping device is found to be enhanced by about 25 times at λ=1.2 μm and by 34 times at λ≈1.6 μm relative to a bare detector without holes. These results make the micro/nanohole Ge/Si QD photodiodes promising to cover the operation wavelength range from the telecom O-band (1260–1360 nm) up to the L-band (1565–1625 nm).

Based on Ultrathin PEDOT:PSS/c-Ge Solar Cells Design and Their Photoelectric Performance

In recent years, nanostructures have improved the performance of solar cells and are regarded as the most promising microstructures. The optical properties of PEDOT:PSS/c-Ge hybrid solar cells (HSCs) based on the octagon germanium nanoparticles (O-GNPs) were numerically analyzed using the finite-difference time-domain (FDTD) method. The optimal structure of the hybrid solar cell is determined by changing the thickness of the organic layer and structural parameters of nanoparticles to enhance the optical absorption and eventually achieve high broadband absorption. By changing the structure parameter of O-GNPs, we studied its effect on solar cells. The optimization of geometric parameters is based on maximum absorption. The light absorption of our optimized HSCs is basically above 90% between 200 and 1500 nm. PEDOT:PSS is placed on top of O-GNPs to transmit the holes better, allowing O-GNPs to capture a lot of photons, to increase absorbance value properties in the AM1.5 solar spectral irradiated region. The transmittance is increased by adding poly-methyl methacrylate (PMMA). At the same time, the electrical characteristics of Ge solar cells were simulated by DEVICE, and short-circuit current (Jsc), open-circuit voltage (Voc), maximum power (Pmax), filling coefficient (FF) and photoelectric conversion efficiency (PCE) were obtained. According to the optimization results after adjusting the structural parameters, the maximum short-circuit current is 44.32 mA/cm2; PCE is 7.84 mW/cm2; FF is 69%. The results show that the O-GNPs have a good light trapping effect, and the structure design has great potential for the absorption of HSCs; it is believed that the conversion efficiency will be further improved through further research.

Enhanced Microsphere-Assisted Picosecond Laser Processing for Nanohole Fabrication on Silicon via Thin Gold Coating

The nanohole arrays on the silicon substrate can effectively enhance the light absorption in thin film silicon solar cells. In order to optimize the solar energy absorption, polystyrene microspheres with diameters of 1 μm are used to assist picosecond laser with a wavelength of 1064 nm to fabricate nanohole arrays on silicon substrate. The experimental results show that the morphology and size of the silicon nanoholes strongly depend on the laser fluence. At 1.19–1.59 J/cm² laser fluences, well-ordered arrays of nanoholes were fabricated on silicon substrate, with diameters domain from 250 to 549 nm and depths ranging from 60 to 99 nm. However, large amounts of sputtered nanoparticles appeared around the silicon nanoholes. To improve the surface morphology of silicon nanoholes, a nanolayered gold coating is applied on silicon surface to assist laser processing. The results show that, for gold-coated silicon substrate, sputtered nanoparticles around the nanoholes are almost invisible and the cross-sectional profiles of the nanoholes are smoother. Moreover, the ablation rate of the nanoholes on the gold-coated silicon substrate have increased compared to that of the nanoholes on the uncoated one. This simple method allows fast fabrication of well-ordered nanoholes on silicon substrate without sputtered nanoparticles and with smooth inner surface.

Graphene Oxide for Integrated Photonics and Flat Optics

With superior optical properties, high flexibility in engineering its material properties, and strong capability for large-scale on-chip integration, graphene oxide (GO) is an attractive solution for on-chip integration of 2D materials to implement functional integrated photonic devices capable of new features. Over the past decade, integrated GO photonics, representing an innovative merging of integrated photonic devices and thin GO films, has experienced significant development, leading to a surge in many applications covering almost every field of optical sciences such as photovoltaics, optical imaging, sensing, nonlinear optics, and light emitting. This paper reviews the recent advances in this emerging field, providing an overview of the optical properties of GO as well as methods for the on-chip integration of GO. The main achievements made in GO hybrid integrated photonic devices for diverse applications are summarized. The open challenges as well as the potential for future improvement are also discussed.

Transparent Hybrid Opals with Unexpected Strong Resonance-Enhanced Photothermal Energy Conversion

Photothermal energy conversion is of fundamental importance to applications ranging from drug delivery to microfluidics and from ablation to fabrication. It typically originates from absorptive processes in materials that-when coupled with non-radiative dissipative processes-allow the conversion of radiative energy into heat. Microstructure design provides versatile strategies for controlling light-matter interactions. In particular, the deliberate engineering of the band structure in photonic materials is known to be an effective approach to amplify absorption in materials. However, photonic amplification is generally tied to high optical contrast materials which limit the applicability of the concept to metamaterials such as microfabricated metal-air hybrids. This contribution describes the first observation of pronounced amplification of absorption in low contrast opals formed by the self-assembly of polymer-tethered particles. The dependence of the amplification factor on the length scale and degree of order of materials as well as the angle of incidence reveal that it is related to the slow photon effect. A remarkable amplification factor of 16 is shown to facilitate the rapid "melting" of opal films even in the absence of "visible" absorption. The results point to novel opportunities for tailoring light-matter interactions in hybrid materials that can benefit the manipulation and fabrication of functional materials.

Direct patterning of periodic semiconductor nanostructures using single-pulse nanosecond laser interference

We demonstrate an effective method for fabricating large area periodic two-dimensional semiconductor nanostructures by means of single-pulse laser interference. Utilizing a pulsed nanosecond laser with a wavelength of 355 nm, precisely ordered square arrays of nanoholes with a periodicity of 300 nm were successfully obtained on UV photoresist and also directly via a resist-free process onto semiconductor wafers. We show improved uniformity using a beam-shaping system consisting of cylindrical lenses with which we can demonstrate highly regular arrays over hundreds of square micrometers. We propose that our novel observation of direct pattern transfer to GaAs is due to local congruent evaporation and subsequent droplet etching of the surface. The results show that single-pulse interference can provide a rapid and highly efficient route for the realization of wide-area periodic nanostructures on semiconductors and potentially on other engineering materials.

Highly sensitive optical ion sensor with ionic liquid-based colorimetric membrane/photonic crystal hybrid structure

An ionic liquid-based thin (~ 1 µm) colorimetric membrane (CM) is a key nano-tool for optical ion sensing, and a two-dimensional photonic crystal slab (PCS) is an important nano-platform for ultimate light control. For highly sensitive optical ion sensing, this report proposes a hybrid of these two optical nano-elements, namely, a CM/PCS hybrid. This structure was successfully fabricated by a simple and rapid process using nanoimprinting and spin-coating, which enabled control of the CM thickness. Optical characterization of the hybrid structure was conducted by optical measurement and simulation of the reflection spectrum, indicating that the light confined in the holes of the PCS was drastically absorbed by the CM when the spectrum overlapped with the absorption spectrum of the CM. This optical property obtained by the hybridization of CM and PCS enabled drastic improvement in the absorption sensitivity in Ca ion sensing, by ca. 78 times compared to that without PCS. Experimental and simulated investigation of the relation between the CM thickness and absorption sensitivity enhancement suggested that the controlled light in the PCS enhanced the absorption cross-section of the dye molecules within the CM based on the enhanced local density of states. This highly sensitive optical ion sensor is expected to be applied for micro-scale bio-analysis like cell-dynamics based on reflectometric Ca ion detection.

Angular Dependence of Solar Cell Parameters in Crystalline Silicon Solar Cells Textured with Periodic Array of Microholes

Surface texturing is an indispensable way of increasing absorption in solar cells. In order to properly characterize the effect of texturing, the angular dependence of the incidence light should be addressed. This is particularly important when the actual application where the incidence angle of the sunlight varies during the day is considered. This study presents the angular dependence of solar cell parameters in the case of periodically textured crystalline silicon (c-Si) solar cells with microholes. A standard solar cell with pyramid texturing is also studied for comparison. It is shown that the incidence angle for the highest efficiency depends on the surface structure. While a standard pyramid-textured surface performs best at the zero angle of incidence, it is needed to tilt the sample with microholes textures 15° with respect to the surface normal. This is also confirmed by the simulation study performed for the structures presented in this study.

Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations

The photodiode in the backside-illuminated CMOS sensor is modeled to analyze the optical performances in a range of wavelengths (300-1100 nm). The effects of changing in the deep trench isolation depth (DTI) and pitch size (d) of the inverted pyramid array (IPA) on the peak value (OE_max.) of optical efficiency (OE) and its wavelength region are identified first. Then, the growth ratio (GR) is defined for the OE change in these wavelength ranges to highlight the effectiveness of various DTI and d combinations on the OEs and evaluate the OE difference between the pixel arrays with and without the DTI + IPA structures. Increasing DTI can bring in monotonous OE_max. increases in the entire wavelength region. For a fixed DTI, the maximum OE_max. is formed as the flat plane (d = 0 nm) is chosen for the top surface of Si photodiode in the RGB pixels operating at the visible light wavelengths; whereas different nonzero value is needed to obtain the maximum OE_max. for the RGB pixels operating in the near-infrared (NIR) region. The optimum choice in d for each color pixel and DTI depth can elevate the maximum GR value in the NIR region up to 82.2%.

Manipulations of light by ordered micro-holes in silicon substrates

Ordered micro-holes with controllable period, diameter and depth are fabricated in Si (001) substrates via a feasible approach based on nanosphere lithography. They dramatically reduce the reflectance in a broad wavelength range of 400-1000 nm, which can be deliberately modulated by tailoring their geometrical parameters. The simulated reflectance via finite-difference time-domain (FDTD) method agrees well with the experimental data. The FDTD simulations also demonstrate substantially enhanced light absorption of a Si thin film with ordered micro-holes. Particularly, the light-filled distributions around micro-holes disclose fundamental features of two types of modes, channel modes and guided modes, involving the wavelength-dependence, the origin, the dominant location region and the interference pattern of the light field around micro-holes. Our results not only provide insights into the antireflection and the substantially enhanced absorption of light by ordered micro-holes, but also open a door to optimizing micro-hole arrays with desired light field distributions for innovative device applications.

Efficiency enhancement of perovskite solar cells based on opal-like photonic crystals

Perovskite solar cells have shown a tremendous interest for photovoltaics since the past decade. However, little is known on the influence of light management using photonic crystals inside such structures. We present here numerical simulations showing the effect of photonic crystal structuring on the integrated quantum efficiency of perovskite solar cells. The photo-active layer is made of an opal-like perovskite structure (monolayer, bilayer or trilayer of perovskite spheres) built in a T i O ₂ matrix. Fano resonances are exploited in order to enhance the absorption, especially near the bandgap of perovskite material. The excitation of quasi-guided modes inside the absorbing spheres enhances the integrated quantum efficiency and the photonic enhancement factor. More specifically, a photonic enhancement factor as high as 6.4% is predicted in the case of spheres monolayer compared to an unstructured perovskite layer. The influences of sphere's radius and incident angle on the absorbing properties are also estimated. Those numerical results can be applied to the nascent field of photonic structuring inside perovskite solar cells.

Nanostructures for Light Trapping in Thin Film Solar Cells

Thin film solar cells are one of the important candidates utilized to reduce the cost of photovoltaic production by minimizing the usage of active materials. However, low light absorption due to low absorption coefficient and/or insufficient active layer thickness can limit the performance of thin film solar cells. Increasing the absorption of light that can be converted into electrical current in thin film solar cells is crucial for enhancing the overall efficiency and in reducing the cost. Therefore, light trapping strategies play a significant role in achieving this goal. The main objectives of light trapping techniques are to decrease incident light reflection, increase the light absorption, and modify the optical response of the device for use in different applications. Nanostructures utilize key sets of approaches to achieve these objectives, including gradual refractive index matching, and coupling incident light into guided modes and localized plasmon resonances, as well as surface plasmon polariton modes. In this review, we discuss some of the recent developments in the design and implementation of nanostructures for light trapping in solar cells. These include the development of solar cells containing photonic and plasmonic nanostructures. The distinct benefits and challenges of these schemes are also explained and discussed.

Light Trapping in Conformal Graphene/Silicon Nanoholes for High-Performance Photodetectors

Hybrid graphene/silicon heterojunctions have been widely utilized in photodetectors because of their unique characteristics of high sensitivity, fast response, and CMOS compatibility. However, the photoresponse is restricted by the high reflectance of planar silicon (up to 50%). Herein, an improved graphene/Si detector with excellent light absorption performance is proposed and demonstrated by directly growing graphene on the surface of silicon nanoholes (SiNHs). It is shown that the combination of SiNHs with conformal graphene provides superior interfaces for efficient light trapping and transport of the photoexcited carriers. A high absorption of up to 90% was achieved, and the conformal graphene/SiNH-based photodetectors exhibited a higher photoresponsivity (2720 A/W) and faster response (∼6.2 μs), compared with the counterpart of the planar graphene/Si, for which the corresponding values are 850 A/W and 51.3 μs. These results showcase the vital role of the material morphology in optoelectronic conversion and pave the way to explore novel high-performance heterojunction photodetectors.

Subwavelength photocathodes via metal-assisted chemical etching of GaAs for solar hydrogen generation

MacEtch allows subwavelength-structured (SWS) texturing on the GaAs surface without compromising crystallinity. The current density increases greatly, which is directly due to the reduction in the reflectance. Photons absorbed under reduced light reflectance are less affected by the charge recombination arising from crystal defects. The catalytic metal remaining after MacEtch serves as a catalyst for water splitting and increases the open-circuit potentials of the SWS GaAs photocathodes. The SWS GaAs not only amplifies the absorption of light, but also improves the collection of deeply generated photons at long wavelengths. The solar-weighted reflectance (SWR) of SWS GaAs is 6.6%, which was much lower than the 39.0% of bare GaAs. The light-limited photocurrent density (LLPC) increased by approximately 90% and the tafel slope improved as etching progressed. The external quantum efficiency was as high as 80%, especially at long wavelengths, after MacEtch. SWS GaAs photocathodes fabricated using MacEtch significantly reduce reflectance and recombination loss, thereby improving the key performance of PEC for hydrogen production. This technology can fully utilize the high absorption rate and carrier mobility of GaAs and is applicable to various photoelectric conversion device performance enhancements.

Surface lattice resonance of line array of poly (glycidyl methacrylate) with CdS quantum dots for label-free biosensing

One dimensional plasmonic grating is a kind of resonant electromagnetic wave absorber with a characteristic wavelength. This study focusses on one-dimensional plasmonic grating consisting of poly (glycidyl methacrylate) (PGMA) brushes and CdS quantum dots (CdQDs) fabrication and PGMA chains grafted on a primary substrate in a line array continued by the immobilization of biotin-modified CdQDs. PGMA brush line array (PBLA) of plasmonic grating exhibited an absorptance at 441 nm while at the same time, CdQDs immobilized with PBLA showed characteristic absorbance at 396 nm. The blue-shift from 441 nm matches the absorbance peak of biotin-modified CdQDs resulting in the enhancement of photoluminescence emission of CdQDs. With streptavidin incubation to assemble CdQDs at 50 nM, the significant decrease in grating height resulted in the red-shift of the absorbance peak to 536 nm. Due to the deviation in absorbance, the intensity of the PL emission decreased gradually with the increase in concentration of streptavidin. In addition, our results showed that streptavidin incubation altered the color reflected from the surface due to effective changes in the refractive index of the layer as well. The limit of detection of the grating for streptavidin detection was determined to be 50 nM. Thus, PBLA-CdQD has the potential to act as a highly-sensitive, label-free optical biosensor.

Nanohole array plasmonic biosensors: Emerging point-of-care applications

Point-of-care (POC) applications have expanded hugely in recent years and is likely to continue, with an aim to deliver cheap, portable, and reliable devices to meet the demands of healthcare industry. POC devices are designed, prototyped, and assembled using numerous strategies but the key essential features that biosensing devices require are: (1) sensitivity, (2) selectivity, (3) specificity, (4) repeatability, and (5) good limit of detection. Overall the fabrication and commercialization of the nanohole array (NHA) setup to the outside world still remains a challenge. Here, we review the various methods of NHA fabrication, the design criteria, the geometrical features, the effects of surface plasmon resonance (SPR) on sensing as well as current state-of-the-art of existing NHA sensors. This review also provides easy-to-understand examples of NHA-based POC biosensing applications, its current status, challenges, and future prospects.

Coordination between Surface Lattice Resonances of Poly(glycidyl Methacrylate) Line Array and Surface Plasmon Resonances of CdS Quantum on Silicon Surface

In this work, a unique hybrid system is proposed for one-dimensional gratings comprising of poly(glycidyl methacrylate) (PGMA) brushes and CdS quantum dots (CQDs). Generally, the emission of QDs is too weak to be observed in a dry state. Plasmonic resonances of the grating structures can be used to enhance the light emission or absorption of CQDs. The interaction between PGMA plasmonic nanostructures and inorganic CQDs plays a crucial role in engineering the light harvest, notably for optoelectronic applications. Extinction measurements of the hybrid system consisting of a PGMA grating and CQDs are reported. We designed one-dimensional gratings with various resolutions to tune the absorptance peaks of grating. PGMA grating grafted from a 1.5 µm resolution of trench arrays of photoresist exhibited absorptance peak at 395 nm, close to the absorption peak of CQDs, resulting in the photoluminescence enhancement of CQDs on the grating due to high charge carriers' recombination rate. Generally, the emission of quantum dots occurs under irradiation at characteristic wavelengths. Immobilizing QDs on the grating facilitates the emission of QDs under irradiation of full-wavelength light. Furthermore, the PGMA gratings with CQDs were immersed in various solvents to change the geometries resulting the shift of absorptance peak of grating. The proposed method could be applied for sensing the nature of the surrounding media and vice versa, as well as for various media of solvents.

Broadband light absorption enhancement in randomly rotated elliptical nanohole arrays for photovoltaic application

Semiconducting nanohole arrays have been considered as a promising candidate for high-efficiency solar cells. In this paper, the optical absorption property of randomly rotated elliptical nanohole arrays consisting of 1×1, 2×2, and 4×4 cells has been investigated. It is found that the average ultimate efficiency of the arrays increases with the increase of the size of the supercell. The 4×4 array has the highest ultimate efficiency, and the efficiency of the 4×4 array is less sensitive to the parameters of the random rotation angle than that of the 1×1 and 2×2 arrays. The comparison of absorption spectra of the three arrays shows that the number of absorption peaks of the 1×1 array is the least, but the peak is the highest and narrowest, and that of the 4×4 array is the most, but the peak is the lowest and broadest. The spatial Fourier spectroscopy analysis of the array shows that the 4×4 arrays have the most Fourier spectrum components and the largest absorption mode density. The enhancement of optical absorption of the 4×4 array is attributed to the folding of energy bands, the increase of the energy density of states caused by large supercells, and the overcoupling between incident light and Bloch resonant modes in the structure. The improved stability of the ultimate efficiency of the 4×4 arrays is because the distribution of the energy density of states of the 4×4 arrays with different random parameters tends to be the same, which leads to almost the same absorption efficiency of the different 4×4 arrays.

Plasmonic thin film InP/graphene-based Schottky-junction solar cell using nanorods

Herein, the design and simulation of graphene/InP thin film solar cells with a novel periodic array of nanorods and plasmonic back-reflectors of the nano-semi sphere was proposed. In this structure, a single-layer of the graphene sheet was placed on the vertical nanorods of InP to form a Schottky junction. The electromagnetic field was determined using solving three-dimensional Maxwell's equations discretized by the finite difference method (FDM). The enhancement of light trapping in the absorbing layer was illustrated, thereby increasing the short circuit current to a maximum value of 31.57 mA/cm² with nanorods having a radius of 400 nm, height of 1250 nm, and nano-semi sphere radius of 50 nm, under a solar irradiation of AM1.5G. The maximum ultimate efficiency was determined to be 45.8% for an angle of incidence of 60°. This structure has shown a very good light trapping ability when graphene and ITO layers were used at the top and as a back-reflector in the proposed photonic crystal structure of the InP nanorods. Thence, this structure improves the short-circuit current density and the ultimate efficiency of 12% and 2.7%, respectively, in comparison with the InP-nanowire solar cells.

Nano-fabrication of depth-varying amorphous silicon crescent shell array for light trapping

We report a new structure of depth controllable amorphous silicon (a-Si) crescent shells array, fabricated by the SiO₂ monolayer array assisted deposition of a-Si by plasma enhanced chemical vapor deposition and nanosphere lithography, for high-efficiency light trapping applications. The depth of the crescent shell cavity was tailored by selective etching of a-Si layer of the SiO₂/a-Si core/shell nanoparticle array with a varied etching time. The morphological changes of the crescent shells were examined by scanning electron microscopy and atomic force microscopy. A simple model is developed to describe the geometrical evolution of the a-Si crescent shells. Spectroscopic measurements and finite difference time domain simulations were conducted to examine the optical performance of the crescent shells. Results show that these nanostructures all have a broadband high efficiency absorption and that the light trapping capability of these crescent shell structures depends on the excitation of depths-regulated optical resonance modes. With an appropriate selection of process parameters, the structure of crescent a-Si shells may be fine-tuned to achieve an optimal light trapping capacity.

Silicon Nanostructures Produced by Modified MacEtch Method for Antireflective Si Surface

This work pertains to the method for modification of silicon (Si) wafer morphology by metal-assisted chemical etching (MacEtch) technique suitable for fabrication of antireflective Si surfaces. For this purpose, we made different Au catalyst patterns on the surface of Si substrate. This modification allowed to obtain the close-packed Au nanodrop (ND) pattern that generates the nanowires (NWs) and the well-separated Au NDs, which induce the nanopore (NP) formation. The antireflective properties of these structures in comparison with NWs produced by the conventional Ag-MacEtch method were analysed. The total surface reflectance of 1~7% for SiNWs and ~17% for SiNPs was observed over the entire Si-absorbing region. Moreover, SiNWs prepared by Au-MacEtch demonstrate better antireflective properties in contrast to those formed by conventional Ag-assisted chemical etching. So, the use of SiNWs produced by the modified Au-MacEtch method as the antireflective material is favored over those prepared by Ag-MacEtch due to their higher light absorption and lower reflectance. The possible reason of these findings is discussed.

Enhanced conversion efficiency in Si solar cells employing photoluminescent down-shifting CdSe/CdS core/shell quantum dots

Silicon solar cells have captured a large portion of the total market of photovoltaic devices mostly due to their relatively high efficiency. However, Silicon exhibits limitations in ultraviolet absorption because high-energy photons are absorbed at the surface of the solar cell, in the heavily doped region, and the photo-generated electron-hole pairs need to diffuse into the junction region, resulting in significant carrier recombination. One of the alternatives to improve the absorption range involves the use of down-shifting nano-structures able to interact with the aforementioned high energy photons. Here, as a proof of concept, we use downshifting CdSe/CdS quantum dots to improve the performance of a silicon solar cell. The incorporation of these nanostructures triggered improvements in the short circuit current density (Jsc, from 32.5 to 37.0 mA/cm2). This improvement led to a ∼13% increase in the power conversion efficiency (PCE), from 12.0 to 13.5%. Our results demonstrate that the application of down-shifting materials is a viable strategy to improve the efficiency of Silicon solar cells with mass-compatible techniques that could serve to promote their widespread utilization.

Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers

GaAs solar cells with nanostructured emitter layers were fabricated via metal-assisted chemical etching. Au nanoparticles produced via thermal treatment of Au thin films were used as etch catalysts to texture an emitter surface with nanohole structures. Epi-wafers with emitter layers 0.5, 1.0, and 1.5 um in thickness were directly textured and a window layer removal process was performed before metal catalyst deposition. A nanohole-textured emitter layer provides effective light trapping capabilities, reducing the surface reflection of a textured solar cell by 11.0%. However, because the nanostructures have high surface area to volume ratios and large numbers of defects, various photovoltaic properties were diminished by high recombination losses. Thus, we have studied the application of nanohole structures to GaAs emitter solar cells and investigated the cells' antireflection and photovoltaic properties as a function of the nanohole structure and emitter thickness. Due to decreased surface reflection and improved shunt resistance, the solar cell efficiency increased from 4.25% for non-textured solar cells to 7.15% for solar cells textured for 5 min.

Localized states and quantum effect of photo-generated carriers in photovoltaic system

We have fabricated the multiple nanolayers impuritied on silicon pillars for Si solar cells to pick up photons in ultraviolet and infrared region of solar spectra, in which the localized states originated from nanosilicon doped with oxygen are built to avoid Auger recombination, and some interesting quantum phenomena in the localized states have been observed. The quantum effect of photo-generated carriers has been observed in I-V curve measurement on the photovoltaic sample prepared in oxygen by using nanosecond pulsed laser. More interesting, the twin states of quantum vibration are measured in the localized states originated from the impuritied nanosilicon, which provides a stable reservoir for electrons in the photovaltaic system. It should be noted that the amplitude change of the quantum vibration occurs under magnetic field with 0.33T on the sample prepared in oxygen, owing to the electron spin in the localized states. The photoluminescence (PL) spectra measured from 300 nm to 1700 nm exhibit the localized states in various regions in the photovoltaic system, in which the electrons can stand in the localized states with longer lifetime to be uneasy into Auger recombination.

Improved optical absorption in visible wavelength range for silicon solar cells via texturing with nanopyramid arrays

Surface-texture with silicon (Si) nanopyramid arrays has been considered as a promising choice for extremely high performance solar cells due to their excellent anti-reflective effects and inherent low parasitic surface areas. However, the current techniques of fabricating Si nanopyramid arrays are always complicated and cost-ineffective. Here, a high throughput nanosphere patterning method is developed to form periodic upright nanopyramid (UNP) arrays in wafer-scale. A direct comparison with the state-of-the-art texture of random pyramids is demonstrated in optical and electronic properties. In combination with the antireflection effect of a SiN_x coating layer, the periodic UNP arrays help to provide a remarkable improvement in short-wavelength response over the random pyramids, attributing to a short-current density gain of 1.35 mA/cm². The advanced texture of periodic UNP arrays provided in this work shows a huge potential to be integrated into the mass production of high-efficiency Si solar cells.

A low-cost, high-efficiency light absorption structure inspired by the Papilio ulysses butterfly

The nano-hole array structure in the black scales of the butterfly can be viewed as a natural solar collector.

Hybrid silicon–carbon nanostructures for broadband optical absorption

Superposition of the optical spectra of the assemble of Sim@C_2nwhich exhibit a broadband optical absorption and the spectrum of solar radiation.

Symmetry-breaking nanostructures on crystalline silicon for enhanced light trapping in thin film solar cells

We introduce a new approach to systematically break the symmetry in periodic nanostructures on a crystalline silicon surface. Our focus is inverted nanopyramid arrays with a prescribed symmetry. The arrangement and symmetry of nanopyramids are determined by etch mask design and its rotation with respect to the [110] orientation of the Si(001) substrate. This approach eliminates the need for using expensive off-cut silicon wafers. We also make use of low-cost, manufacturable, wet etching steps to fabricate the nanopyramids. Our experiment and computational modeling demonstrate that the symmetry breaking can increase the photovoltaic efficiency in thin-film silicon solar cells. For a 10-micron-thick active layer, the efficiency improves from 27.0 to 27.9% by enhanced light trapping over the broad sunlight spectrum. Our computation further reveals that this improvement would increase from 28.1 to 30.0% in the case of a 20-micron-thick active layer, when the unetched area between nanopyramids is minimized with over-etching. In addition to the immediate benefit to solar photovoltaics, our method of symmetry breaking provides a useful experimental platform to broadly study the effect of symmetry breaking on spectrally tuned light absorption and emission.

Improved Efficiency of Silicon Nanoholes/Gold Nanoparticles/Organic Hybrid Solar Cells via Localized Surface Plasmon Resonance

Silicon is the most widely used material for solar cells due to its abundance, non-toxicity, reliability, and mature fabrication process. In this paper, we fabricated silicon nanoholes (SiNHS)/gold nanoparticles (AuNPS)/organic hybrid solar cells and investigated their spectral and opto-electron conversion properties. SiNHS nanocomposite films were fabricated by metal-assisted electroless etching (EE) method. Then, we modified the surface of the nanocomposite films by exposing the samples in the air. After that, polymer poly(3,4-ethylenedioxythiophene):poly (styrenesulfonate) (

PEDOT

PSS) blended with AuNPS were spin-coated on the surface of the SiNHS nanocomposite films as a hole-transporting layer. The external quantum efficiency (EQE) values of the solar cells with AuNPS are higher than that of the samples without AuNPS in the spectral region of 600-1000 nm, which were essential to achieve high performance photovoltaic cells. The power conversion efficiency (PCE) of the solar cells incorporating AuNPS exhibited an enhancement of 27 %, compared with that of the solar cells without AuNPS. We thought that the improved efficiency were attributed to localized surface plasmon resonance (LSPR) triggered by gold nanoparticles in SiNHS nanocomposite films.

Optimization of nanohole array parameters for improving the ultimate efficiency of nanohole structured c-Si solar cells

Surface texturing helps in reducing the reflectance of the surface and hence it improves the ultimate efficiency of the solar cell. In this article, rigorous coupled wave analysis was used to find out the effect of different nanohole parameters such as nanohole diameter (D), pitch (P) and nanohole depth (H) on the reflectance and the ultimate efficiency of a c-Si solar cell of 275 μm thickness. Response surface methodology was used for co-relating the nanohole geometry parameters with the ultimate efficiency. The developed relation was used for optimization using genetic algorithm implemented through MATLAB. The optimized parameters have resulted in a 17.81% improvement in ultimate efficiency as compared with bare substrate of same thickness. A comparative study was made on the effect of parameters on the ultimate efficiency of the solar cell and it was found that higher value of diameter yielded greater ultimate efficiency. Finally, the performance of structured Si was compared with that of bare Si and Si coated with anti-reflective coating in various configurations. A 50 nm deep hole filled with anti-reflective coating and with a top surface anti-reflective coating of 75 nm yielded the highest ultimate efficiency of 47.61%.

Wafer-Scale Integration of Inverted Nanopyramid Arrays for Advanced Light Trapping in Crystalline Silicon Thin Film Solar Cells

Crystalline silicon thin film (c-Si TF) solar cells with an active layer thickness of a few micrometers may provide a viable pathway for further sustainable development of photovoltaic technology, because of its potentials in cost reduction and high efficiency. However, the performance of such cells is largely constrained by the deteriorated light absorption of the ultrathin photoactive material. Here, we report an efficient light-trapping strategy in c-Si TFs (~20 μm in thickness) that utilizes two-dimensional (2D) arrays of inverted nanopyramid (INP) as surface texturing. Three types of INP arrays with typical periodicities of 300, 670, and 1400 nm, either on front, rear, or both surfaces of the c-Si TFs, are fabricated by scalable colloidal lithography and anisotropic wet etch technique. With the extra aid of antireflection coating, the sufficient optical absorption of 20-μm-thick c-Si with a double-sided 1400-nm INP arrays yields a photocurrent density of 39.86 mA/cm(2), which is about 76 % higher than the flat counterpart (22.63 mA/cm(2)) and is only 3 % lower than the value of Lambertian limit (41.10 mA/cm(2)). The novel surface texturing scheme with 2D INP arrays has the advantages of excellent antireflection and light-trapping capabilities, an inherent low parasitic surface area, a negligible surface damage, and a good compatibility for subsequent process steps, making it a good alternative for high-performance c-Si TF solar cells.

Simulation and Experimental Study on Anti-reflection Characteristics of Nano-patterned Si Structures for Si Quantum Dot-Based Light-Emitting Devices

Surface-textured structure is currently an interesting topic since it can efficiently reduce the optical losses in advanced optoelectronic devices via light management. In this work, we built a model in finite-difference time-domain (FDTD) solutions by setting the simulation parameters based on the morphology of the Si nanostructures and compared with the experimental results in order to study the anti-reflection behaviors of the present nano-patterned structures. It is found that the reflectance is gradually reduced by increasing the depth of Si nanostructures which is in well agreement with the experimental observations. The reflectance can be lower than 10 % in the light range from 400 to 850 nm for Si nano-patterned structures with a depth of 150 nm despite the quite low aspect ratio, which can be understood as the formation of gradually changed index layer and the scattering effect of Si nano-patterned structures. By depositing the Si quantum dots/SiO2 multilayers on nano-patterned Si substrate, the reflectance can be further suppressed and the luminescence intensity centered at 820 nm from Si quantum dots is enhanced by 6.6-fold compared with that of flat one, which can be attributed to the improved light extraction efficiency. However, the further etch time causes the reduction of luminescence intensity from Si quantum dots which may ascribe to the serious surface recombination of carriers.

Hybrid Energy Cell with Hierarchical Nano/Micro-Architectured Polymer Film to Harvest Mechanical, Solar, and Wind Energies Individually/Simultaneously

We report the creation of hybrid energy cells based on hierarchical nano/micro-architectured polydimethylsiloxane (HNMA-PDMS) films with multifunctionality to simultaneously harvest mechanical, solar, and wind energies. These films consist of nano/micro dual-scale architectures (i.e., nanonipples on inverted micropyramidal arrays) on the PDMS surface. The HNMA-PDMS is replicable by facile and cost-effective soft imprint lithography using a nanoporous anodic alumina oxide film formed on the micropyramidal-structured silicon substrate. The HNMA-PDMS film plays multifunctional roles as a triboelectric layer in nanogenerators and an antireflection layer for dye-sensitized solar cells (DSSCs), as well as a self-cleaning surface. This film is employed in triboelectric nanogenerator (TENG) devices, fabricated by laminating it on indium-tin oxide-coated polyethylene terephthalate (ITO/PET) as a bottom electrode. The large effective contact area that emerged from the densely packed hierarchical nano/micro-architectures of the PDMS film leads to the enhancement of TENG device performance. Moreover, the HNMA-PDMS/ITO/PET, with a high transmittance of >90%, also results in highly transparent TENG devices. By placing the HNMA-PDMS/ITO/PET, where the ITO/PET is coated with zinc oxide nanowires, as the top glass substrate of DSSCs, the device is able to add the functionality of TENG devices, thus creating a hybrid energy cell. The hybrid energy cell can successfully convert mechanical, solar, and wind energies into electricity, simultaneously or independently. To specify the device performance, the effects of external pushing frequency and load resistance on the output of TENG devices are also analyzed, including the photovoltaic performance of the hybrid energy cells.

One-step Maskless Fabrication and Optical Characterization of Silicon Surfaces with Antireflective Properties and a White Color Appearance

We report a simple one-step maskless fabrication of inverted pyramids on silicon wafers by reactive ion etching. The fabricated surface structures exhibit excellent anti-reflective properties: The total reflectance of the nano inverted pyramids fabricated by our method can be as low as 12% without any anti-reflective layers, and down to only 0.33% with a silicon nitride coating. The results from angle resolved scattering measurements indicate that the existence of triple reflections is responsible for the reduced reflectance. The surfaces with the nano inverted pyramids also exhibit a distinct milky white color.

Large Absorption Enhancement in Ultrathin Solar Cells Patterned by Metallic Nanocavity Arrays

A new type of light trapping structure utilizing ring-shaped metallic nanocavity arrays is proposed for the absorption enhancement in ultrathin solar cells with few photonic waveguide modes. Dozens of times of broadband absorption enhancement in the spectral range of 700 to 1100 nm is demonstrated in an ultrathin Si₃N₄/c-Si/Ag prototype solar cell by means of finite-difference time-domain (FDTD) simulation, and this dramatic absorption enhancement can be attributed to the excitation of plasmonic cavity modes in these nanocavity arrays. The cavity modes optimally compensate for the lack of resonances in the longer wavelength range for ultrathin solar cells, and eventually a maximum J_sc enhancement factor of 2.15 is achieved under AM 1.5G solar illumination. This study opens a new perspective for light management in thin film solar cells and other optoelectronic devices.

Geometrical shape design of nanophotonic surfaces for thin film solar cells

We present the effect of geometrical parameters, particularly shape, on optical absorption enhancement for thin film solar cells based on crystalline silicon (c-Si) and gallium arsenide (GaAs) using a rigorous coupled wave analysis (RCWA) method. It is discovered that the "sweet spot" that maximizes efficiency of solar cells exists for the design of nanophotonic surfaces. For the case of ultrathin, rod array is practical due to the effective optical resonances resulted from the optimum geometry whereas parabola array is viable for relatively thicker cells owing to the effective graded index profile. A specific value of thickness, which is the median value of other two devices tailored by rod and paraboloid, is optimized by truncated shape structure. It is therefore worth scanning the optimum shape of nanostructures in a given thickness in order to achieve high performance.

Nanohole Structuring for Improved Performance of Hydrogenated Amorphous Silicon Photovoltaics

While low hole mobilities limit the current collection and efficiency of hydrogenated amorphous silicon (a-Si:H) photovoltaic devices, attempts to improve mobility of the material directly have stagnated. Herein, we explore a method of utilizing nanostructuring of a-Si:H devices to allow for improved hole collection in thick absorber layers. This is achieved by etching an array of 150 nm diameter holes into intrinsic a-Si:H and then coating the structured material with p-type a-Si:H and a conformal zinc oxide transparent conducting layer. The inclusion of these nanoholes yields relative power conversion efficiency (PCE) increases of ∼45%, from 7.2 to 10.4% PCE for small area devices. Comparisons of optical properties, time-of-flight mobility measurements, and internal quantum efficiency spectra indicate this efficiency is indeed likely occurring from an improved collection pathway provided by the nanostructuring of the devices. Finally, we estimate that through modest optimizations of the design and fabrication, PCEs of beyond 13% should be obtainable for similar devices.