Large scale pattern graphene electrode for high performance in transparent organic single crystal field-effect transistors

Ultrahigh Spin Filter Efficiency, Giant Magnetoresistance and Large Spin Seebeck Coefficient in Monolayer and Bilayer Co-/Fe-/Cu-Phthalocyanine Molecular Devices

The spin related electrical and thermoelectric properties of monolayer and bilayer MPc (M = Co, Fe, Cu) molecular devices in a parallel spin configuration (PC) and an anti-parallel spin configuration (APC) between the V-shaped zigzag-edged graphene nanoribbon electrodes and the center bilayer MPc molecules are investigated by combining the density functional theory and non-equilibrium Green's function approaches. The results show that there is an ultrahigh spin filter efficiency exceeding 99.99995% and an ultra-large total conductance of 0.49996G0 for FePc-CoPc molecular devices in the PC and a nearly pure charge current at high temperature in the APC and a giant MR ratio exceeding 9.87 × 106% at a zero bias. In addition, there are pure spin currents for CuPc and FePc molecular devices in the PC, and an almost pure spin current for FePc molecular devices in the APC at some temperature. Meanwhile, there is a high SFE of about 99.99585% in the PC and a reserved SFE of about -19.533% in the APC and a maximum MR ratio of about 3.69 × 108% for the FePc molecular device. Our results predict that the monolayer and bilayer MPc (M = Co, Fe, Cu) molecular devices possess large advantages in designing high-performance electrical and spintronic molecular devices.

Graphene-Quantum-Dots-Induced Centimeter-Sized Growth of Monolayer Organic Crystals for High-Performance Transistors

Monolayer organic crystals have attracted considerable attention due to their extraordinary optoelectronic properties. Solution self-assembly on the surface of water is an effective approach to fabricate monolayer organic crystals. However, due to the difficulties in controlling the spreading of organic solution on the water surface and the weak intermolecular interaction between the organic molecules, large-area growth of monolayer organic crystals remains a great challenge. Here, a graphene quantum dots (GQDs)-induced self-assembly method for centimeter-sized growth of monolayer organic crystals on a GQDs solution surface is reported. The spreading area of the organic solution can be readily controlled by tuning the pH value of the GQDs solution. Meanwhile, the π-π stacking interaction between the GQDs and the organic molecules can effectively reduce the nucleation energy of the organic molecules and afford a cohesive force to bond the crystals, enabling large-area growth of monolayer organic crystals. Using 2,7-didecyl benzothienobenzothiopene (C₁₀-BTBT) as an examples, centimeter-sized monolayer C₁₀-BTBT crystal with uniform molecular packing and crystal orientation is attained. Organic field-effect transistors based on the monolayer C₁₀-BTBT crystals exhibit a high mobility up to 2.6 cm² V^-1 s^-1, representing the highest mobility value for solution-assembled monolayer organic crystals. This work provides a feasible route for large-scale fabrication of monolayer organic crystals toward high-performance organic devices.

A uniform stable P-type graphene doping method with a gold etching process

Graphene is one of the materials with the most potential for post-silicon electronics because of its outstanding electrical, optical, and mechanical properties. However, the lack of a uniform stable doping method extremely limits the various possible applications of graphene. Here, we developed a uniform and stable graphene efficient p-doping method. Through etching a thin gold film on graphene with a KI/I₂ solution, iodine complexes are produced as the dopant absorbing on the graphene surface, and induce extra holes in graphene. Utilizing this method, the graphene film can be effectively doped to p-type without producing undesirable defects, and the roughness of the graphene surface can still be maintained at an ultra-low nanoscale (RMS roughness ∼0.739 nm). The doping effectiveness can be clearly verified by the changes in the Raman spectrum, and the Dirac point shift of the graphene-based transistor, and the reduction of sheet resistance (∼27.2%). Furthermore, the substantially coincident transfer curves after 45 days reveal the long-term stable doping effects. Therefore, this doping method can exploit a way for various graphene-based applications, such as phototransistors, sensors, and organic thin-film transistors.

Spontaneous Formation of 1D Pattern in Monolayer VSe2 with Dispersive Adsorption of Pt Atoms for HER Catalysis

Creation of functional patterns in two-dimensional (2D) materials provides opportunities to extend their potential for applications. Transition-metal dichalcogenides (TMDCs) are suitable 2D materials for pattern generation because of properties including alterable polymorphic phases, easy chalcogen-vacancy formation, metal-atom insertion, and alloying. Such patterning can be used for selective functionalization. Here we report the spontaneous formation of long-range, well-ordered 1D patterns in monolayer vanadium diselenide (VSe₂) by a single annealing stage during growth. Atomic-resolution images in real space combined with density-functional-theory (DFT) calculations reveal the 1D features of patterned VSe₂. Further experimental characterization of the intermediate states in the growth process confirm the spontaneous formation of the 1D pattern by annealing-induced Se-deficient linear defects. The 1D pattern can be reversibly transformed to homogenous VSe₂ monolayer by reintroducing Se atoms. Moreover, additional experiments demonstrate that a dispersive deposition of Pt atoms along the 1D structures of patterned VSe₂ is achieved, while DFT calculations find that their catalytic activity for hydrogen evolution reaction (HER) is as good as that of Pt surfaces. The formation of long-range, well-ordered 1D patterns not only demonstrates an effective way of dimension modulation in 2D materials but also enriches the potential of intrinsically patterned 2D materials for promising catalytic activities.

van der Waals Stacking Induced Transition from Schottky to Ohmic Contacts: 2D Metals on Multilayer InSe

Incorporation of two-dimensional (2D) materials in electronic devices inevitably involves contact with metals, and the nature of this contact (Ohmic and/or Schottky) can dramatically affect the electronic properties of the assembly. Controlling these properties to reliably form low-resistance Ohmic contact remains a great challenge due to the strong Fermi level pinning (FLP) effect at the interface. Herein, we employ density functional theory calculations to show that van der Waals stacking can significantly modulate Schottky barrier heights in the contact formed between multilayer InSe and 2D metals by suppressing the FLP effect. Importantly, the increase of InSe layer number induces a transition from Schottky to Ohmic contact, which is attributed to the decrease of the conduction band minimum and rise of the valence band maximum of InSe. Based on the computed tunneling and Schottky barriers, Cd₃C₂ is the most compatible electrode for 2D InSe among the materials studied. This work illustrates a straightforward method for developing more effective InSe-based 2D electronic nanodevices.

Modulating the Work Function of Graphene by Pulsed Plasma Aided Controlled Chlorination

Chlorine on graphene (G) matrices was doped by pulsed plasma stimulation on graphite electrode submerged in organochlorine solvents (CH₂Cl₂, CHCl₃, CCl₄). The study of work function by Kelvin probe force microscopy (KPFM) measurement clearly indicates that Cl-doped G behave like semiconductor and GG@CHCl₃ exhibits the lowest value for the work function. We propose that this report not only represents a new route for tuning the semiconductivity of G but also indicates that doping level of halogen on G based carbon framework can be controlled by pulsed plasma treatment of carbon materials on various organohalogen derivatives.

Oxidized graphene nanoparticles as a delivery system for the pro-apoptotic sphingolipid C6 ceramide

Sphingolipids such as ceramide have attracted much attention as possible anticancer agents due to their potent pro-apoptotic effects. However, due to their extreme hydrophobicity, there is currently no clinically approved delivery method for in vivo use as a therapeutic agent. To this end, we have developed a novel method for loading the short-chain C₆ ceramide onto oxidized graphene nanoribbons (O-GNRs) and graphene nanoplatelets (GNPs). Mass spectrometry revealed loading efficiencies of 57% and 51.5% for C₆ ceramide onto O-GNRs and GNPs, respectively. The PrestoBlue viability assay revealed that 100 µg/mL of C₆ ceramide-loaded O-GNRs and C₆ ceramide-loaded GNPs reduced HeLa cell viability by approximately 93% and approximately 76%, respectively, compared to untreated HeLa cells, while equal concentrations of these nanoparticles without C₆ ceramide did not significantly reduce HeLa cell viability. We confirmed that this cytotoxicity was apoptotic in nature via capase-3 activity and Hoechst staining. Using live-cell confocal imaging with the fluorescent NBD-ceramide loaded on O-GNRs, we observed robust uptake into HeLa cells within 30 min while NBD-ceramide on its own was uptaken much more rapidly. Transmission electron microscopy confirmed that C₆ ceramide-loaded O-GNRs were actually entering cells. Taken together, these data show that O-GNRs are a promising delivery agent for ceramide. To our knowledge, this study is the first to use such a loading method. © 2018 Wiley Periodicals, Inc. J Biomed Mater Res Part A: 107A: 25-37, 2019.

Extremely stable graphene electrodes doped with macromolecular acid

Although conventional p-type doping using small molecules on graphene decreases its sheet resistance (R_sh), it increases after exposure to ambient conditions, and this problem has been considered as the biggest impediment to practical application of graphene electrodes. Here, we report an extremely stable graphene electrode doped with macromolecular acid (perfluorinated polymeric sulfonic acid (PFSA)) as a p-type dopant. The PFSA doping on graphene provides not only ultra-high ambient stability for a very long time (> 64 days) but also high chemical/thermal stability, which have been unattainable by doping with conventional small-molecules. PFSA doping also greatly increases the surface potential (~0.8 eV) of graphene, and reduces its R_sh by ~56%, which is very important for practical applications. High-efficiency phosphorescent organic light-emitting diodes are fabricated with the PFSA-doped graphene anode (~98.5 cd A⁻¹ without out-coupling structures). This work lays a solid platform for practical application of thermally-/chemically-/air-stable graphene electrodes in various optoelectronic devices.

Chemical doping is a viable strategy to tune the electrical properties of pristine graphene, but suffers from stability issues. Here, the authors develop a macromolecular chemical doping approach that makes use of polymeric acid and provides high stability.

When 2D Materials Meet Molecules: Opportunities and Challenges of Hybrid Organic/Inorganic van der Waals Heterostructures

van der Waals heterostructures, composed of vertically stacked inorganic 2D materials, represent an ideal platform to demonstrate novel device architectures and to fabricate on-demand materials. The incorporation of organic molecules within these systems holds an immense potential, since, while nature offers a finite number of 2D materials, an almost unlimited variety of molecules can be designed and synthesized with predictable functionalities. The possibilities offered by systems in which continuous molecular layers are interfaced with inorganic 2D materials to form hybrid organic/inorganic van der Waals heterostructures are emphasized. Similar to their inorganic counterpart, the hybrid structures have been exploited to put forward novel device architectures, such as antiambipolar transistors and barristors. Moreover, specific molecular groups can be employed to modify intrinsic properties and confer new capabilities to 2D materials. In particular, it is highlighted how molecular self-assembly at the surface of 2D materials can be mastered to achieve precise control over position and density of (molecular) functional groups, paving the way for a new class of hybrid functional materials whose final properties can be selected by careful molecular design.

Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodes

n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by ∼0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (∼13.8 cd/A) than did inverted PLEDs with pristine graphene (∼2.74 cd/A). N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.

Organic semiconductor crystals

A comprehensive overview of organic semiconductor crystals is provided, including the physicochemical features, the control of crystallization and the device physics.

Highly Ordered and Multiple-Responsive Graphene Oxide/Azoimidazolium Surfactant Intercalation Hybrids: A Versatile Control Platform

To produce graphene materials with better controllability, a new graphene oxide (GO) intercalation hybrid is fabricated with the incorporation and functionalization with the azoimidazolium (AzoIm⁺) surfactant. The hybrid exhibits a highly uniform lamellar structure in which a few layers of GO are stacked with AzoIm⁺ alternatively. Simultaneous control of the mesoscopic structures, aggregation properties, and electrochemical behavior of the hybrid is achieved by inheriting the photo, thermal, and mechanical responsiveness of azoimidazolium. Ultraviolet (UV) treatment produces a well-dispersed GO/AzoIm⁺ suspension aggregate and a precipitate, whereas the specific capacitance of the final hybrid decreases. The lamellar stacking becomes anisotropic by uniaxial stretching on a soft polymer. With a liquid crystal unit inserted between the layers, the d spacing of the lamella passes through transformation, disordering, and finally recovery stages, associated with the increasing and decreasing temperature. The explosive release of heat generated by the thermal reduction of GO is reduced in the GO/AzoIm⁺ intercalation hybrid. The release of heat is tunable by varying the relative quantity and UV treatment of AzoIm⁺. The physical properties of the hybrid allow the controlled preparation of ultrasmall Au nanodots between the GO layers. This represents a major step toward multiple-responsive integrated graphene applications.

Study of graphene growth on copper foil by pulsed laser deposition at reduced temperature

Graphene has been successfully grown on commercial copper foil at low temperature of 500 °C by pulsed laser deposition (PLD). X-ray diffraction patterns showed that films have been grown in the presence of Cu(111) and Cu(200) facets. Raman spectroscopy was utilized to study the effects of temperature, surface structure, and cooling rate on the graphene growth. Raman spectra indicate that the synthesis of graphene layers rely on the surface quality of the Cu substrate together with the proper cooling profile coupled with graphene growth temperature. PLD-grown graphene film on Cu has been verified by transmission electron microscopy. Surface mediated growth of graphene on Cu foil substrate revealed to have a favorable catalytic effect. High growth rate of graphene and less defects can be derived using fast cooling rate.

Efficient interfacial interaction for improving mechanical properties of polydimethylsiloxane nanocomposites filled with low content of graphene oxide nanoribbons

GONR-filled H-t-PDMS nanocomposites were fabricated by using a facile solvent-free process, and the reinforcement efficiency of GONRs at low filler content is superior to those of the other carbon nano-fillers.

Superlyophilicity-Facilitated Synthesis Reaction at the Microscale: Ordered Graphdiyne Stripe Arrays

As a new member of carbon allotropes, graphdiyne is a promising material with excellent electronic performance and high elasticity, indicating the possibility of graphdiyne to serve as the building blocks in flexible electronics. However, precise positioning/patterning of graphdiyne is still a challenge for the realization of large-area and flexible organic electronic devices and circuits. Here, the direct in situ synthesis of patterning graphdiyne stripe arrays dominated by the superlyophilic grooved templates is reported, whereas the superlyophilicity of grooved templates plays a key role in allowing continuous mass transport of raw reactants into the microscale spacing. After the completion of cross-coupling reaction procedure, precisely patterned graphdiyne stripes can be generated accordingly. The size of graphdiyne stripe arrays is depending on the silicon substrate size (1 cm × 1.5 cm), and the layer thickness can be manipulated from just several nanometers to hundreds of nanometers by varying the primary concentration of hexaethynylbenzene monomers. As a proof-of-principle demonstration, a stretchable sensor based on the graphdiyne stripe arrays is performed to monitor the human finger motion. It is expected that this wettability-facilitated strategy will provide new insights into the controlled synthesis of graphdiyne toward promising flexible electronics and other optoelectronic applications.

Graphene growth controlled by the position and number of layers (n = 0, 1, and more than 2) using Ni and MgO patterned ultra-flat Cu foil

We have successfully controlled the number of graphene layers (n-layer) by using a Cu–Ni–MgO hetero catalyst having a different catalytic activity and carbon solubility.

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes

We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

Architectural Engineering of Nanowire Network Fine Pattern for 30 μm Wide Flexible Quantum Dot Light-Emitting Diode Application

Replacing rigid metal oxides with flexible alternatives as a next-generation transparent conductor is important for flexible optoelectronic devices. Recently, nanowire networks have emerged as a new type of transparent conductor and have attracted wide attention because of their all-solution-based process manufacturing and excellent flexibility. However, the intrinsic percolation characteristics of the network determine that its fine pattern behavior is very different from that of continuous films, which is a critical issue for their practical application in high-resolution devices. Herein, a simple optimization approach is proposed to address this issue through the architectural engineering of the nanowire network. The aligned and random silver nanowire networks are fabricated and compared in theory and experimentally. Remarkably, network performance can be notably improved with an aligned structure, which is helpful for external quantum efficiency and the luminance of quantum dot light-emitting diodes (QLEDs) when the network is applied as the bottom-transparent electrode. More importantly, the advantage introduced by network alignment is also of benefit to fine pattern performance, even when the pattern width is narrowed to 30 μm, which leads to improved luminescent properties and lower failure rates in fine QLED strip applications. This paradigm illuminates a strategy to optimize nanowire network based transparent conductors and can promote their practical application in high-definition flexible optoelectronic devices.

Improving low-energy boron/nitrogen ion implantation in graphene by ion bombardment at oblique angles

Ion implantation is a widely adopted approach to structurally modify graphene and tune its electrical properties for a variety of applications. Further development of the approach requires a fundamental understanding of the mechanisms that govern the ion bombardment process as well as establishment of key relationships between the controlling parameters and the dominant physics. Here, using molecular dynamics simulations with adaptive bond order calculations, we demonstrate that boron and nitrogen ion bombardment at oblique angles (particularly at 70°) can improve both the productivity and quality of perfect substitution by over 25%. We accomplished this by systematically analyzing the effects of the incident angle and ion energy in determining the probabilities of six distinct types of physics that may occur in an ion bombardment event, including reflection, absorption, substitution, single vacancy, double vacancy, and transmission. By analyzing the atomic trajectories from 576,000 simulations, we identified three single vacancy creation mechanisms and four double vacancy creation mechanisms, and quantified their probability distributions in the angle-energy space. These findings further open the door for improved control of ion implantation towards a wide range of applications of graphene.

Patterned Taping: A High-Efficiency Soft Lithographic Method for Universal Thin Film Patterning

As a universal lithographic technique for microscale/nanoscale film patterns, we develop a strategy for the use of soft lithographically patterned pressure-sensitive tape (patterned tape) as a pattern-transporting stamp material. Patterning was successfully implemented through the selective detachment and/or attachment of various thin films, including organic and metallic layers demanding no subsequent physical, thermal, or chemical treatment, as this incurs the risk of the deformation of the thin film and the deterioration of its functionalities. Its features of universal adhesion and flexibility enable pressure-sensitive tapes to form patterns on a variety of surfaces: organic, polymeric, and inorganic surfaces as well as flat, curved, uneven, and flexible substrates. Moreover, the proposed technique boasts the unique and distinct advantages of short operation time, supreme patterning yield, and multilayer stacking capability, which suggest considerable potential for their application to advanced optoelectronic device fabrication.

Minimizing electrode edge in organic transistors with ultrathin reduced graphene oxide for improving charge injection efficiency

High charge injection efficiency in an organic transistor is realized by minimizing the electrode edge with ultrathin (about 3 nm) reduced graphene oxide.

Graphene-ruthenium complex hybrid photodetectors with ultrahigh photoresponsivity

The maximum responsivity of a pure monolayer graphene-based photodetector is currently less than 10 mA W(-1) because of small optical absorption and short recombination lifetime. Here, a graphene hybrid photodetector functionalized with a photoactive ruthenium complex that shows an ultrahigh responsivity of ≈1 × 10(5) A W(-1) and a photoconductive gain of ≈3 × 10(6) under incident optical intensity of the order of sub-milliwatts is reported. This responsivity is two orders of magnitude higher than the precedent best performance of graphene-based photodetectors under a similar incident light intensity. Upon functionalization with a 4-nm-thick ruthenium complex, monolayer graphene-based photodetectors exhibit pronounced n-type doping effect due to electron transfer via the metal-ligand charge transfer (MLCT) from the ruthenium complex to graphene. The ultrahigh responsivity is attributed to the long lifetime and high mobility of the photoexcited charge carriers. This approach is highly promising for improving the responsivity of graphene-based photodetectors.

Vectorial diffusion for facile solution-processed self-assembly of insoluble semiconductors: a case study on metal phthalocyanines

Solution processibility is one of the most intriguing properties of organic semiconductors. However, it is difficult to find a suitable solvent and solution process for most semiconductors. For example, metal phthalocyanines (MPcs) are only soluble in non-volatile solvents, which prevent their applications from solution process. For the first time, vectorial diffusion is utilized for solution processing of MPcs. The obtained large F16CuPc and α-phase CuPc crystals and the efficient phase separation of them suggest the vectorial diffusion process is as slow as a self-assembly process, which is helpful to yield large crystals and purify the semiconductors. This method, which only uses common commercial solvents without any complex and expensive instruments and high-temperature operation, provides a facile approach for purification of organic semiconductors and growth of their crystals in large quantities.

Large-area, conductive and flexible reduced graphene oxide (RGO) membrane fabricated by electrophoretic deposition (EPD)

A large-area, conductive, and flexible membrane made from the stabilized aqueous solution of reduced graphene oxide (RGO) is successfully fabricated using an electrophoretic deposition (EPD) method. A low-voltage operation of EPD (∼3 volts) allows a robust consolidation of RGO layers desirably aligned in the in-plane direction through the cohesive electrophoretic squeezing force near the current collector. Transferring the deposited RGO layers to arbitrary substrates or achieving as a free-standing form, two methods of "chemical etching" and "electrochemical etching" are developed to detach the RGO layers from the EPD current collector without damaging the deposited RGO. Further reducing the free-standing RGO membrane by thermal annealing up to 1000 °C, a graphite-like architecture is restored (d-spacing at 3.42 Å with C/O ratio at 16.66) and the electrical conductivity increases as high as 5.51 × 10(5) S/m. The tightly-consolidated and securely-detached RGO membrane allows the free-standing and flexible features and highly conductive characteristics, which are further developed during thermal treatment. Because of the facile scale-up nature of the EPD process and RGO solution, the developed methodology has a considerable potential to be applied to various energy storage devices, flexible conductive coatings, and other electrochemical systems.

Charge trapping states at the SiO2-oligothiophene monolayer interface in field effect transistors studied by Kelvin probe force microscopy

Using Kelvin probe force microscopy (KPFM) we studied the local charge trapping states at the SiO2-oligothiophene interface in a field effect transistor (FET), where SiO2 is the gate dielectric. KPFM reveals surface potential inhomogeneities within the oligothiophene monolayer, which correlate with its structure. A large peak of trap states with energies in the oligothiophene's band gap due to hydroxyl groups is present at the oxide surface. We show that these states are successfully eliminated by preadsorption of a layer of (3-aminopropyl)triethoxysilane (APTES). Time-resolved surface potential transient measurements further show that the charge carrier injection in the nonpassivated FET contains two exponential transients, due to the charge trapping on the oxide surface and in the bulk oxide, while the APTES-passivated FET has only a single-exponential transient due to the bulk oxide. The results demonstrate that APTES is a good SiO2 surface passivation layer to reduce trap states while maintaining a hydrophilic surface, pointing out the importance of dielectric surface passivation to bridge the gap between soft materials and electronic devices.

Improving the binding characteristics of tripodal compounds on single layer graphene

Graphene is an atomically thin, transparent, and conductive electrode material of interest for sensors and energy conversion and storage devices, among others. Fully realizing its potential will require robust and general methods to anchor active functionality onto its pristine basal plane. Such strategies should not utilize covalent bond formation, which disrupts the graphene's π-electron system, from which most of its desirable properties arise. We recently introduced a tripodal binding motif, which forms robust monolayers on graphene capable of immobilizing active proteins and preventing their denaturation. Here we describe structure-property relationships for a series of tripod binding groups with "feet" of different sizes. Each derivative adsorbs strongly (ΔGads ≈ -39 kJ mol(-1)) to graphene's basal plane, yet the resulting monolayers exhibit kinetic stabilities that vary over 2 orders of magnitude and molecular densities that vary by a factor of 2. This study identifies phenanthrene as a superior anchor relative to pyrene on the basis of its increased monolayer density and similar kinetic stability. We also demonstrate that varying the length of the methylene linkers between the feet and tripodal core does not affect binding substantially. These results represent the first demonstration of structure-property relationships in the assembly of molecular adsorbates on graphene and provide a paradigm for designing effective graphene binding motifs.

Wafer-scale patterning of reduced graphene oxide electrodes by transfer-and-reverse stamping for high performance OFETs

A wafer-scale patterning method for solution-processed graphene electrodes, named the transfer-and-reverse stamping method, is universally applicable for fabricating source/drain electrodes of n- and p-type organic field-effect transistors with excellent performance. The patterning method begins with transferring a highly uniform reduced graphene oxide thin film, which is pre-prepared on a glass substrate, onto hydrophobic silanized (rigid/flexible) substrates. Patterns of the as-prepared reduced graphene oxide films are then formed by modulating the surface energy of the films and selectively delaminating the films using an oxygen-plasma-treated elastomeric stamp with patterns. Reduced graphene oxide patterns with various sizes and shapes can be readily formed onto an entire wafer. Also, they can serve as the source/drain electrodes for benchmark n- and p-type organic field-effect transistors with enhanced performance, compared to those using conventional metal electrodes. These results demonstrate the general utility of this technique. Furthermore, this simple, inexpensive, and scalable electrode-patterning-technique leads to assembling organic complementary circuits onto a flexible substrate successfully.

Formation of regular stripes of chemically converted graphene on hydrophilic substrates

Chemically converted graphene (CCG), from a chemistry point of view, is a giant molecule with a unique two-dimensional (2D) configuration. The availability of CCG dispersion provides a range of scalable methods to assemble graphene-based materials but brings the challenge of understanding and control of the CCG morphology in solution processing. In this study, we found that, similar to conventional colloidal systems (e.g., spherical particles or polymers), a 2D sheet of CCG can be transferred from its aqueous dispersion to solid substrates in the form of highly regular stripe patterns by evaporation-driven deposition. The width and spacing can be defined by the concentration of the CCG dispersion and the properties of the substrate (e.g., roughness and surface charge). Furthermore, the high resolution AFM images illustrate that both 2D flattened and highly wrinkled CCG can be formed in each individual stripe, depending on the location across the stripe. The in situ optical observation of the stripe formation indicates that the morphological change of CCG may occur in the crowded meniscus of the drying front.

Carbon nanotube electrodes in organic transistors

The scope of this Minireview is to provide an overview of the recent progress on carbon nanotube electrodes applied to organic thin film transistors. After an introduction on the general aspects of the charge injection processes at various electrode-semiconductor interfaces, we discuss the great potential of carbon nanotube electrodes for organic thin film transistors and the recent achievements in the field.

Electrochemically exfoliated graphene as solution-processable, highly conductive electrodes for organic electronics

Solution-processable thin layer graphene is an intriguing nanomaterial with tremendous potential for electronic applications. In this work, we demonstrate that electrochemical exfoliation of graphite furnishes graphene sheets of high quality. The electrochemically exfoliated graphene (EG) contains a high yield (>80%) of one- to three-layer graphene flakes with high C/O ratio of 12.3 and low sheet resistance (4.8 kΩ/□ for a single EG sheet). Due to the solution processability of EG, a vacuum filtration method in association with dry transfer is introduced to produce large-area and highly conductive graphene films on various substrates. Moreover, we demonstrate that the patterned EG can serve as high-performance source/drain electrodes for organic field-effect transistors.

Graphene film growth on polycrystalline metals

Graphene, a true wonder material, is the newest member of the nanocarbon family. The continuous network of hexagonally arranged carbon atoms gives rise to exceptional electronic, mechanical, and thermal properties, which could result in the application of graphene in next generation electronic components, energy-storage materials such as capacitors and batteries, polymer nanocomposites, transparent conducting electrodes, and mechanical resonators. With one particularly attractive application, optically transparent conducting electrodes or films, graphene has the potential to rival indium tin oxide (ITO) and become a material for producing next generation displays, solar cells, and sensors. Typically, graphene has been produced from graphite using a variety of methods, but these techniques are not suitable for growing large-area graphene films. Therefore researchers have focused much effort on the development of methodology to grow graphene films across extended surfaces. This Account describes current progress in the formation and control of graphene films on polycrystalline metal surfaces. Researchers can grow graphene films on a variety of polycrystalline metal substrates using a range of experimental conditions. In particular, group 8 metals (iron and ruthenium), group 9 metals (cobalt, rhodium, and iridium), group 10 metals (nickel and platinum), and group 11 metals (copper and gold) can support the growth of these films. Stainless steel and other commercial copper-nickel alloys can also serve as substrates for graphene film growth. The use of copper and nickel currently predominates, and these metals produce large-area films that have been efficiently transferred and tested in many electronic devices. Researchers have grown graphene sheets more than 30 in. wide and transferred them onto display plastic ready for incorporation into next generation displays. The further development of graphene films in commercial applications will require high-quality, reproducible growth at ambient pressure and low temperature from cheap, readily available carbon sources. The growth of graphene on metal surfaces has drawbacks: researchers must transfer the graphene from the metal substrate or remove the metal by etching. Further research is needed to overcome these transfer and removal challenges.

Graphene synthesis: relationship to applications

Graphene is a true wonder material that promises much in a variety of applications that include electronic devices, supercapacitors, batteries, composites, flexible transparent displays and sensors. This review highlights the different methods available for the synthesis of graphene and discusses the viability and practicalities of using the materials produced via these methods for different graphene-based applications.

Synthesis and catalytic performance of MCM-41 modified with tetracarboxylphthalocyanine

A series of tetracarboxylphthalocyanines (MPc(COOH)4, M = H, Mn(II), Fe(II), Co(II), Ni(II), Cu(II), and Zn(II)) were anchored onto MCM-41 by the following procedures: functionalization of MCM-41 with (EtO)3SiCH2CH2CH2NH2 reacting with surface Si-OH, and anchoring MPc(COOH)4 onto MCM-41 with a substitution reaction between chloroformyl and amino groups. The samples were characterized by infrared spectroscopy, powder X-ray diffraction, scanning electron microscopy, N2 adsorption-desorption, and X-ray photoelectron spectroscopy. Catalytic activity of oxidation was tested using solutions of ethanethiol in petroleum ether and thiophene in octane; CoPc-CONH-MCM-41 displayed the highest conversion ratio of 90.15 % and 93.79 %, respectively.

Graphene: an emerging electronic material

Graphene, a single layer of carbon atoms in a honeycomb lattice, offers a number of fundamentally superior qualities that make it a promising material for a wide range of applications, particularly in electronic devices. Its unique form factor and exceptional physical properties have the potential to enable an entirely new generation of technologies beyond the limits of conventional materials. The extraordinarily high carrier mobility and saturation velocity can enable a fast switching speed for radio-frequency analog circuits. Unadulterated graphene is a semi-metal, incapable of a true off-state, which typically precludes its applications in digital logic electronics without bandgap engineering. The versatility of graphene-based devices goes beyond conventional transistor circuits and includes flexible and transparent electronics, optoelectronics, sensors, electromechanical systems, and energy technologies. Many challenges remain before this relatively new material becomes commercially viable, but laboratory prototypes have already shown the numerous advantages and novel functionality that graphene provides.

Cell specific cytotoxicity and uptake of graphene nanoribbons

The synthesis of oxidized graphene nanoribbons (O-GNR) via longitudinal unzipping of carbon nanotubes opens avenues for their further development for a variety of biomedical applications. Evaluation of the cyto- and bio-compatibility is necessary to develop any new material for in vivo biomedical applications. In this study, we report the cytotoxicity screening of O-GNRs water-solubilized with PEG-DSPE (1,2-distearoyl-sn-glycero-3-phosphoethanolamine-N-[amino(polyethylene glycol)]), using six different assays, in four representative cell lines; Henrietta Lacks cells (HeLa) derived from cervical cancer tissue, National Institute of Health 3T3 mouse fibroblast cells (NIH-3T3), Sloan Kettering breast cancer cells (SKBR3) and Michigan cancer foundation-7 breast cancer cells (MCF7). These cell lines significantly differed in their response to O-GNR-PEG-DSPE formulations; assessed and evaluated using various endpoints (lactate dehydrogenase (LDH) release, cellular metabolism, lysosomal integrity and cell proliferation) for cytotoxicity. In general, all the cells showed a dose-dependent (10-400 μg/ml) and time-dependent (12-48 h) decrease in cell viability. However, the degree of cytotoxicity was significantly lower in MCF7 or SKBR3 cells compared to HeLa cells. These cells were 100% viable upto 48 h, when incubated at 10 μg/ml O-GNR-PEG-DSPE concentration, and showed decrease in cell viability above this concentration with ~78% of cells viable at the highest concentration (400 μg/ml). In contrast, significant cell death (5-25% cell death depending on the time point, and the assay) was observed for HeLa cells even at a low concentration of 10 μg/ml. The decrease in cell viability was steep with increase in concentration with the CD(50) values ≥ 100 μg/ml depending on the assay, and time point. Transmission electron microscopy of the various cells treated with the O-GNR solutions show higher uptake of the O-GNR-PEG-DSPEs into HeLa cells compared to other cell types. Additional analysis indicates that this increased uptake is the dominant cause of the significantly higher toxicity exhibited by HeLa cells. The results suggest that water-solubilized O-GNR-PEG-DSPEs have a heterogenous cell-specific cytotoxicity, and have significantly different cytotoxicity profile compared to graphene nanoparticles prepared by the modified Hummer's method (graphene nanoparticles prepared by oxidation of graphite, and its mechanical exfoliation) or its variations.

CVD graphene as interfacial layer to engineer the organic donor-acceptor heterojunction interface properties

We demonstrate the use of chemical-vapor-deposited (CVD) graphene as an effective indium-tin-oxide (ITO) electrode surface modifier to engineer the organic donor-acceptor heterojunction interface properties in an inverted organic solar cell device configuration. As revealed by in situ near-edge X-ray adsorption fine structure measurement, the organic donor-acceptor heterojunction, comprising copper-hexadecafluoro-phthalocyanine (F16CuPc) and copper phthalocyanine (CuPc), undergoes an obvious orientation transition from a standing configuration (molecular π-plane nearly perpendicular to the substrate surface) on the bare ITO electrode to a less standing configuration with the molecular π-plane stacking adopting a large projection along the direction perpendicular to the electrode surface on the CVD graphene-modified ITO electrode. Such templated less-standing configuration of the organic heterojunction could significantly enhance the efficiency of charge transport along the direction perpendicular to the electrode surface in the planar heterojunction-based devices. Compared with the typical standing organic-organic heterojunction on the bare ITO electrode, our in situ ultraviolet photoelectron spectroscopy experiments reveal that the heterojunction on the CVD graphene modified ITO electrode possesses better aligned energy levels with respective electrodes, hence facilitating effective charge collection.