Electrically bistable properties of layer-by-layer assembled multilayers based on protein nanoparticles

Near-Temperature-Independent Electron Transport Well beyond Expected Quantum Tunneling Range via Bacteriorhodopsin Multilayers

A key conundrum of biomolecular electronics is efficient electron transport (ETp) through solid-state junctions up to 10 nm, often without temperature activation. Such behavior challenges known charge transport mechanisms, especially via nonconjugated molecules such as proteins. Single-step, coherent quantum-mechanical tunneling proposed for ETp across small protein, 2-3 nm wide junctions, but it is problematic for larger proteins. Here we exploit the ability of bacteriorhodopsin (bR), a well-studied, 4-5 nm long membrane protein, to assemble into well-defined single and multiple bilayers, from ∼9 to 60 nm thick, to investigate ETp limits as a function of junction width. To ensure sufficient signal/noise, we use large area (∼10-3 cm2) Au-protein-Si junctions. Photoemission spectra indicate a wide energy separation between electrode Fermi and the nearest protein-energy levels, as expected for a polymer of mostly saturated components. Junction currents decreased exponentially with increasing junction width, with uniquely low length-decay constants (0.05-0.5 nm-1). Remarkably, even for the widest junctions, currents are nearly temperature-independent, completely so below 160 K. While, among other things, the lack of temperature-dependence excludes, hopping as a plausible mechanism, coherent quantum-mechanical tunneling over 60 nm is physically implausible. The results may be understood if ETp is limited by injection into one of the contacts, followed by more efficient charge propagation across the protein. Still, the electrostatics of the protein films further limit the number of charge carriers injected into the protein film. How electron transport across dozens of nanometers of protein layers is more efficient than injection defines a riddle, requiring further study.

Molecular Engineering of E. coli Bacterioferritin: A Versatile Nanodimensional Protein Cage

Currently, intense interest is focused on the discovery and application of new multisubunit cage proteins and spherical virus capsids to the fields of bionanotechnology, drug delivery, and diagnostic imaging as their internal cavities can serve as hosts for fluorophores or bioactive molecular cargo. Bacterioferritin is unusual in the ferritin protein superfamily of iron-storage cage proteins in that it contains twelve heme cofactors and is homomeric. The goal of the present study is to expand the capabilities of ferritins by developing new approaches to molecular cargo encapsulation employing bacterioferritin. Two strategies were explored to control the encapsulation of a diverse range of molecular guests compared to random entrapment, a predominant strategy employed in this area. The first was the inclusion of histidine-tag peptide fusion sequences within the internal cavity of bacterioferritin. This approach allowed for the successful and controlled encapsulation of a fluorescent dye, a protein (fluorescently labeled streptavidin), or a 5 nm gold nanoparticle. The second strategy, termed the heme-dependent cassette strategy, involved the substitution of the native heme with heme analogs attached to (i) fluorescent dyes or (ii) nickel-nitrilotriacetate (NTA) groups (which allowed for controllable encapsulation of a histidine-tagged green fluorescent protein). An in silico docking approach identified several small molecules able to replace the heme and capable of controlling the quaternary structure of the protein. A transglutaminase-based chemoenzymatic approach to surface modification of this cage protein was also accomplished, allowing for future nanoparticle targeting. This research presents novel strategies to control a diverse set of molecular encapsulations and adds a further level of sophistication to internal protein cavity engineering.

Flexible Transient Resistive Memory Based on Biodegradable Composites

Physical transient electronics have attracted more attention as the basis for building green electronics and biomedical devices. However, there are difficulties in selecting materials for the fabricated devices to take into account both biodegradability and high performance. In this paper, a physically transient resistive random-access memory (RRAM) device was fabricated by using egg protein and graphene quantum dot composites as active layers. The sandwich structure composed of Al/EA:GQD/ITO shows a good write-once-multiple-read memory characteristic, and the introduced GQD improves the switching current ratio of the device. By using the sensitivity of GQDs to ultraviolet light, the logic operation of the "OR gate" is completed. Furthermore, the device exhibits a physical transient behavior and good biodegradability due to the dissolution behavior in deionized water. These results suggest that the device is a favorable candidate for the construction of memory elements for transient electronic systems.

Physically Transient, Flexible, and Resistive Random Access Memory Based on Silver Ions and Egg Albumen Composites

Organic-resistance random access memory has high application potential in the field of next-generation green nonvolatile memory. Because of their biocompatibility and environmental friendliness, natural biomaterials are suitable for the fabrication of biodegradable and physically transient resistive switching memory devices. A flexible memory device with physically transient properties was fabricated with silver ions and egg albumen composites as active layers, which exhibited characteristics of write-once-read-many-times (WORM), and the incorporation of silver ions improved the ON/OFF current ratio of the device. The device can not only complete the logical operations of "AND gate" and "OR gate", but its active layer film can also be dissolved in deionized water, indicating that it has the characteristics of physical transients. This biocompatible memory device is a strong candidate for a memory element for the construction of transient electronic systems.

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

In this paper, a tuneable multilevel data storage bioresistive memory device is prepared from a composite of multiwalled carbon nanotubes (MWCNTs) and egg albumen (EA). By changing the concentration of MWCNTs incorporated into the egg albumen film, the switching current ratio of aluminium/egg albumen:multiwalled carbon nanotubes/indium tin oxide (Al/EA:MWCNT/ITO) for resistive random access memory increases as the concentration of MWCNTs decreases. The device can achieve continuous bipolar switching that is repeated 100 times per cell with stable resistance for 104 s and a clear storage window under 2.5 × 104 continuous pulses. Changing the current limit of the device to obtain low-state resistance values of different states achieves multivalue storage. The mechanism of conduction can be explained by the oxygen vacancies and the smaller number of iron atoms that are working together to form and fracture conductive filaments. The device is nonvolatile and stable for use in rewritable memory due to the adjustable switch ratio, adjustable voltage, and nanometre size, and it can be integrated into circuits with different power consumption requirements. Therefore, it has broad application prospects in the fields of data storage and neural networks.

Electronic effects of nano-confinement in functional organic and inorganic materials for optoelectronics

This review provides a comprehensive overview of the electronic effects of nano-confinement (from 1D to 3D geometries) on optoelectronic materials and their applications.

From Memristive Materials to Neural Networks

The information technologies have been increasing exponentially following Moore's law over the past decades. This has fundamentally changed the ways of work and life. However, further improving data process efficiency is facing great challenges because of physical and architectural limitations. More powerful computational methodologies are crucial to fulfill the technology gap in the post-Moore's law period. The memristor exhibits promising prospects in information storage, high-performance computing, and artificial intelligence. Since the memristor was theoretically predicted by L. O. Chua in 1971 and experimentally confirmed by HP Laboratories in 2008, it has attracted great attention from worldwide researchers. The intrinsic properties of memristors, such as simple structure, low power consumption, compatibility with the complementary metal oxide-semiconductor (CMOS) process, and dual functionalities of the data storage and computation, demonstrate great prospects in many applications. In this review, we cover the memristor-relevant computing technologies, from basic materials to in-memory computing and future prospects. First, the materials and mechanisms in the memristor are discussed. Then, we present the development of the memristor in the domains of the synapse simulating, in-memory logic computing, deep neural networks (DNNs) and spiking neural networks (SNNs). Finally, the existent technology challenges and outlook of the state-of-art applications are proposed.

Nanoparticle-Based Electrodes with High Charge Transfer Efficiency through Ligand Exchange Layer-by-Layer Assembly

Organic-ligand-based solution processes of metal and transition metal oxide (TMO) nanoparticles (NPs) have been widely studied for the preparation of electrode materials with desired electrical and electrochemical properties for various energy devices. However, the ligands adsorbed on NPs have a significant effect on the intrinsic properties of materials, thus influencing the performance of bulk electrodes assembled by NPs for energy devices. To resolve these critical drawbacks, numerous approaches have focused on developing unique surface chemistry that can exchange bulky ligands with small ligands or remove bulky ligands from NPs after NP deposition. In particular, recent studies have reported that the ligand-exchange-induced layer-by-layer (LE-LbL) assembly of NPs enables controlled assembly of NPs with the desired interparticle distance, and interfaces, dramatically improving the electrical/electrochemical performance of electrodes. This emerging approach also demonstrates that efficient surface ligand engineering can exploit the unique electrochemical properties of individual NPs and maximize the electrochemical performance of the resultant NP-assembled electrodes through improved charge transfer efficiency. This report focuses on how LE-LbL assembly can be effectively applied to NP-based energy storage/conversion electrodes. First, the basic principles of the LE-LbL approach are introduced and then recent progress on NP-based energy electrodes prepared via the LE-LbL approach is reviewed.

Building memory devices from biocomposite electronic materials

Natural biomaterials are potential candidates for the next generation of green electronics due to their biocompatibility and biodegradability. On the other hand, the application of biocomposite systems in information storage, photoelectrochemical sensing, and biomedicine has further promoted the progress of environmentally benign bioelectronics. Here, we mainly review recent progress in the development of biocomposites in data storage, focusing on the application of biocomposites in resistive random-access memory (RRAM) and field effect transistors (FET) with their device structure, working mechanism, flexibility, transient characteristics. Specifically, we discuss the application of biocomposite-based non-volatile memories for simulating biological synapse. Finally, the application prospect and development potential of biocomposites are presented.

Self-Limiting Assembly Approaches for Nanoadditive Manufacturing of Electronic Thin Films and Devices

Most electronics consist of functional thin films with tens of nanometer thicknesses. It is usually challenging to control the growth of these thin films using conventional solution-based approaches. Nanoadditive manufacturing, a method to deposit electronically desired molecules, polymers, or nanomaterials in a layer-by-layer (LbL) fashion, has emerged as a promising technique for the precise control of film growth and device fabrication. Here, basic principles of nanoadditive manufacturing approaches with self-limiting characteristics are summarized with a particular focus on Langmuir-Blodgett assembly and LbL assembly. Additively manufactured electronic thin films with properties of conductors, semiconductors, and dielectrics are reviewed, followed by a discussion of their application in various electronics, such as field-effect transistors, sensors, memory devices, photodetectors, light-emitting diodes, and electrochromic devices. Finally, challenges and future developments of these approaches are proposed. The resulting analysis reveals promising opportunities of nanoadditive manufacturing for the solution-based fabrication of electronic devices.

Fabrication of Electrochemical-Based Bioelectronic Device and Biosensor Composed of Biomaterial-Nanomaterial Hybrid

The field of bioelectronics has paved the way for the development of biochips, biomedical devices, biosensors and biocomputation devices. Various biosensors and biomedical devices have been developed to commercialize laboratory products and transform them into industry products in the clinical, pharmaceutical, environmental fields. Recently, the electrochemical bioelectronic devices that mimicked the functionality of living organisms in nature were applied to the use of bioelectronics device and biosensors. In particular, the electrochemical-based bioelectronic devices and biosensors composed of biomolecule-nanoparticle hybrids have been proposed to generate new functionality as alternatives to silicon-based electronic computation devices, such as information storage, process, computations and detection. In this chapter, we described the recent progress of bioelectronic devices and biosensors based on biomaterial-nanomaterial hybrid.

Phototunable Biomemory Based on Light-Mediated Charge Trap

Phototunable biomaterial-based resistive memory devices and understanding of their underlying switching mechanisms may pave a way toward new paradigm of smart and green electronics. Here, resistive switching behavior of photonic biomemory based on a novel structure of metal anode/carbon dots (CDs)-silk protein/indium tin oxide is systematically investigated, with Al, Au, and Ag anodes as case studies. The charge trapping/detrapping and metal filaments formation/rupture are observed by in situ Kelvin probe force microscopy investigations and scanning electron microscopy and energy-dispersive spectroscopy microanalysis, which demonstrates that the resistive switching behavior of Al, Au anode-based device are related to the space-charge-limited-conduction, while electrochemical metallization is the main mechanism for resistive transitions of Ag anode-based devices. Incorporation of CDs with light-adjustable charge trapping capacity is found to be responsible for phototunable resistive switching properties of CDs-based resistive random access memory by performing the ultraviolet light illumination studies on as-fabricated devices. The synergistic effect of photovoltaics and photogating can effectively enhance the internal electrical field to reduce the switching voltage. This demonstration provides a practical route for next-generation biocompatible electronics.

Ultralow Power Consumption Flexible Biomemristors

Low power consumption is the important requirement in memory devices for saving energy. In particular, improved energy efficiency is essential in implantable electronic devices for operation under a limited power supply. Here, we demonstrate the use of κ-carrageenan (κ-car) as the resistive switching layer to achieve memory that has low power consumption. A carboxymethyl (CM) group is introduced to the κ-car to increase its ionic conductivity. Ag was doped in CM:κ-car to improve the resistive switching properties of the devices. Memory devices based on Ag-doped CM:κ-car showed electroforming-free resistive switching. This device exhibited low reset voltage (∼0.05 V), fast switching speed (50 ns), and high on/off ratio (>10³) under low compliance current (10^-5 A). Its power consumption (∼0.35 μW) is much lower than those of the previously reported biomemristors. The resistive switching may be a result of an electrochemical redox process and Ag filament formation in the CM:κ-car under an electric field. This biopolymer memory can also be fabricated on flexible substrate. This study verifies the feasibility of using biopolymers for applications to future implantable and biocompatible nanoelectronics.

Highly Uniform Resistive Switching Properties of Solution-Processed Silver-Embedded Gelatin Thin Film

The silver-embedded gelatin (AgG) thin film produced by the solution method of metal salts dissolved in gelatin is presented. Its simple fabrication method ensures the uniform distribution of Ag dots. Memory devices based on AgG exhibit good device performance, such as the ON/OFF ratio in excess of 10⁵ and the coefficient of variation in less of 50%. To further investigate the position of filament formation and the role of each element, current sensing atomic force microscopy (CSAFM) analysis as well as elemental line profiles across the two different conditions in the LRS and HRS are analyzed. The conductive and nonconductive regions in the current map of the CSAFM image show that the conductive filaments occur in the AgG layer around Ag dots. The migration of oxygen ions and the redox reaction of carbon are demonstrated to be the driving mechanism for the resistive switching of AgG memory devices. The results show that dissolving metal salts in gelatin is an effective way to achieve high-performance organic-electronic applications.

Solid-state electrical applications of protein and peptide based nanomaterials

This review summarizes recent advancements in electrical properties and applications of natural proteins and mutated variants, synthetic oligopeptides and peptide–π conjugates.

An all-in-one memory cell based on a homopolymer with a pyrene side chain and its volatile and nonvolatile resistive switch behaviors

Memory devices based on PMPPE exhibit a rewritable ternary memory behaviour (0, 1, 2, three conductivity states).

Flexible bio-memristive devices based on chicken egg albumen:Au@SiO2 core-shell nanoparticle nanocomposites

Flexible bio-memristive (FBM) devices utilizing chicken egg albumen (CEA):Au@SiO₂ core-shell nanoparticle nanocomposites were fabricated on indium-tin-oxide (ITO) coated polyethylene naphthalate (PEN) substrates. Current-voltage (I-V) curves for the Al/CEA:Au@SiO₂ core-shell nanoparticle/ITO/PEN devices showed clockwise current hysteresis behaviors due to the existence of the CEA:Au@SiO₂ core-shell nanoparticle nanocomposites. The endurance number of the ON/OFF switching for the FBM devices was above 10² cycles. An ON/OFF current ratio of 1 × 10⁵ was maintained for retention times longer than 1 × 10⁴ s. The memory characteristics of the FBM devices after bending were similar to those before bending. The memory margin and the stability of FBM devices were enhanced due to the embedded Au@SiO₂ core-shell nanoparticles. The switching mechanisms occurring in the Al/CEA:Au@SiO₂ core-shell nanoparticle/ITO-coated PEN devices are described on the basis of the I-V results and the filament mechanisms.

Flexible supercapacitor electrodes based on real metal-like cellulose papers

The effective implantation of conductive and charge storage materials into flexible frames has been strongly demanded for the development of flexible supercapacitors. Here, we introduce metallic cellulose paper-based supercapacitor electrodes with excellent energy storage performance by minimizing the contact resistance between neighboring metal and/or metal oxide nanoparticles using an assembly approach, called ligand-mediated layer-by-layer assembly. This approach can convert the insulating paper to the highly porous metallic paper with large surface areas that can function as current collectors and nanoparticle reservoirs for supercapacitor electrodes. Moreover, we demonstrate that the alternating structure design of the metal and pseudocapacitive nanoparticles on the metallic papers can remarkably increase the areal capacitance and rate capability with a notable decrease in the internal resistance. The maximum power and energy density of the metallic paper-based supercapacitors are estimated to be 15.1 mW cm⁻² and 267.3 μWh cm⁻², respectively, substantially outperforming the performance of conventional paper or textile-type supercapacitors.

With ligand-mediated layer-by-layer assembly between metal nanoparticles and small organic molecules, the authors prepare metallic paper electrodes for supercapacitors with high power and energy densities. This approach could be extended to various electrodes for portable/wearable electronics.

Slippery Liquid-Immobilized Coating Films Using in Situ Oxidation-Reduction Reactions of Metal Ions in Polyelectrolyte Films

We fabricated slippery liquid-immobilized coating (SLIC) films by reacting a slippery liquid (polymethylhydrosiloxane) near the surface of a polyelectrolyte film containing silver ions prepared by the layer-by-layer method. The obtained films maintained their slipperiness after chemical and physical treatments, in contrast to slippery liquid-infused porous surfaces. The high chemical and physical stabilities of the films were attributable to gelation and immobilization of the lubricant owing to an oxidation-reduction reaction with subsequent dehydration condensation of Si-OH on the outer surface of the polyelectrolyte film and the bonding of Si-H with NH₂ groups within the polyelectrolyte film, respectively. Moreover, the SLIC films exhibited a high degree of slipperiness with respect to low-surface-tension liquids. To the best of our knowledge, this technique of lubricant immobilization using silver ions has not been reported previously. The films should be suitable for use in various applications where contamination must be prevented under extreme conditions, such as those requiring high physical durability and organic solvent use.

Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin

Ultra-lightweight resistive switching memory based on protein has been demonstrated. The memory foil is 0.4 mg cm(-2) , which is 320-fold lighter than silicon substrate, 20-fold lighter than office paper and can be sustained by a human hair. Additionally, high resistance OFF/ON ratio of 10(5) , retention time of 10(4) s, and excellent flexibility (bending radius of 800 μm) have been achieved.

Silk Fibroin for Flexible Electronic Devices

Flexible electronic devices are necessary for applications involving unconventional interfaces, such as soft and curved biological systems, in which traditional silicon-based electronics would confront a mechanical mismatch. Biological polymers offer new opportunities for flexible electronic devices by virtue of their biocompatibility, environmental benignity, and sustainability, as well as low cost. As an intriguing and abundant biomaterial, silk offers exquisite mechanical, optical, and electrical properties that are advantageous toward the development of next-generation biocompatible electronic devices. The utilization of silk fibroin is emphasized as both passive and active components in flexible electronic devices. The employment of biocompatible and biosustainable silk materials revolutionizes state-of-the-art electronic devices and systems that currently rely on conventional semiconductor technologies. Advances in silk-based electronic devices would open new avenues for employing biomaterials in the design and integration of high-performance biointegrated electronics for future applications in consumer electronics, computing technologies, and biomedical diagnosis, as well as human-machine interfaces.

Physically Transient Resistive Switching Memory Based on Silk Protein

Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate-buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 10(2) and a retention time of more than 10(4) s are achieved for nonvolatile memory applications.

Protein cages and synthetic polymers: a fruitful symbiosis for drug delivery applications, bionanotechnology and materials science

Protein cages have become essential tools in bionanotechnology due to their well-defined, monodisperse, capsule-like structure. Combining them with synthetic polymers greatly expands their application, giving rise to novel nanomaterials fore.g.drug-delivery, sensing, electronic devices and for uses as nanoreactors.

Resistive Switching Memory Devices Based on Proteins

Resistive switching memory constitutes a prospective candidate for next-generation data storage devices. Meanwhile, naturally occurring biomaterials are promising building blocks for a new generation of environmentally friendly, biocompatible, and biodegradable electronic devices. Recent progress in using proteins to construct resistive switching memory devices is highlighted. The protein materials selection, device engineering, and mechanism of such protein-based resistive switching memory are discussed in detail. Finally, the critical challenges associated with protein-based resistive switching memory devices are presented, as well as insights into the future development of resistive switching memory based on natural biomaterials.

Synthesis and Morphology of Two Carbazole-Pyrazoline-Containing Polymer Systems and Their Electrical Memory Performance

A new atom-transfer radical polymerization (ATRP) initiator 4-[1-(2-dodecyl-1,3-dioxo-2,3-dihydro-1H-benzo[de]isoquinolin-6-yl)-3-(4-nitrophenyl)-4,5-dihydro-1H-pyrazol-5-yl]phenyl 2-bromo-2-methylpropanoate (IN) as an electron acceptor (A) and a monomer 2-(9H-carbazole-9-yl)-ethyl methacrylate (MCz) as an electron donor (D) were simultaneously introduced into two different D-A polymer systems by using the end-functionalizing or blending method. The mass percentage of IN in the end-functionalized polymer PMCz-IN and the mixed polymer composite PMCz+IN were both controlled at approximately 1.0 wt %. The optical, electrochemical, and surface morphology properties of the two polymeric films prepared by means of spin-coating technology were comparatively investigated. Sandwich devices based on PMCz-IN and PMCz+IN demonstrated nonvolatile write-once-read-many-times memory (WORM) and volatile static random access memory (SRAM) characteristics, respectively, which were further verified by the Kelvin probe force microscopy (KPFM) measurements. The proposed memory mechanism could be attributed to the formation of a stable charge-transfer (CT) complex for PMCz-IN and an unstable CT complex for PMCz+IN. Furthermore, the different distribution of IN in the two polymeric films might be the main reason for the stability of the CT complex.

Construction of RNA-Quantum Dot Chimera for Nanoscale Resistive Biomemory Application

RNA nanotechnology offers advantages to construct thermally and chemically stable nanoparticles with well-defined shape and structure. Here we report the development of an RNA-QD (quantum dot) chimera for resistive biomolecular memory application. Each QD holds two copies of the pRNA three-way junction (pRNA-3WJ) of the bacteriophage phi29 DNA packaging motor. The fixed quantity of two RNAs per QD was achieved by immobilizing the pRNA-3WJ with a Sephadex aptamer for resin binding. Two thiolated pRNA-3WJ serve as two feet of the chimera that stand on the gold plate. The RNA nanostructure served as both an insulator and a mediator to provide defined distance between the QD and gold. Immobilization of the chimera nanoparticle was confirmed with scanning tunneling microscopy. As revealed by scanning tunneling spectroscopy, the conjugated pRNA-3WJ-QD chimera exhibited an excellent electrical bistability signal for biomolecular memory function, demonstrating great potential for the development of resistive biomolecular memory and a nano-bio-inspired electronic device for information processing and computing.

Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends

Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and endurance memory performance. The electrical properties of the memory devices are systematically investigated and modeled. Our results suggest that the polymer blends provide an important step towards high-density flexible nonvolatile memory devices.

Nonvolatile bio-memristor fabricated with egg albumen film

This study demonstrates the fabrication and characterization of chicken egg albumen-based bio-memristors. By introducing egg albumen as an insulator to fabricate memristor devices comprising a metal/insulator/metal sandwich structure, significant bipolar resistive switching behavior can be observed. The 1/f noise characteristics of the albumen devices were measured, and results suggested that their memory behavior results from the formation and rupture of conductive filaments. Oxygen diffusion and electrochemical redox reaction of metal ions under a sufficiently large electric field are the principal physical mechanisms of the formation and rupture of conductive filaments; these mechanisms were observed by analysis of the time-of-flight secondary ion mass spectrometry (TOF-SIMS) and resistance-temperature (R-T) measurement results. The switching property of the devices remarkably improved by heat-denaturation of proteins; reliable switching endurance of over 500 cycles accompanied by an on/off current ratio (Ion/off) of higher than 10(3) were also observed. Both resistance states could be maintained for a suitably long time (>10(4) s). Taking the results together, the present study reveals for the first time that chicken egg albumen is a promising material for nonvolatile memory applications.

Effects of drying temperature and ethanol concentration on bipolar switching characteristics of natural Aloe vera-based memory devices

Natural Aloe vera provides a biodegradable, biocompatible, and renewable avenue for the sustainable development of electronics.

Resistive switching behavior in gelatin thin films for nonvolatile memory application

This paper presents the characteristics of gelatin, which can cause reproducible resistive switching and bipolar resistive switching in aluminum (Al)/gelatin (35 nm)/ITO devices. The memory devices exhibited a high ON/OFF ratio of over 10(6) and a long retention time of over 10(5) seconds. The resistive switching mechanism was investigated using the high-angle dark field transmission electron microscopy image of Al/gelatin/ITO devices in the pristine high-resistance state (HRS) and then in returning to HRS after the RESET process. The energy-dispersive X-ray spectroscopy analysis revealed the aggregation of N and Al elements and the simultaneous presence of carbon and oxygen elements in the rupture of filament paths. Furthermore, via a current-sensing atomic force microscopy, we found that conduction paths in the ON-state are distributed in a highly localized area, which is associated with a carbon-rich filamentary switching mechanism. These results support that the chelation of N binding with Al ions improves the conductivity of the low-resistance state but not the production of metal filaments.

Enzyme nanoarchitectonics: organization and device application

Fabrication of ultrasmall functional machines and their integration within ultrasmall areas or volumes can be useful for creation of novel technologies. The ultimate goal of the development of ultrasmall machines and device systems is to construct functional structures where independent molecules operate as independent device components. To realize exotic functions, use of enzymes in device structures is an attractive solution because enzymes can be regarded as efficient machines possessing high reaction efficiencies and specificities and can operate even under ambient conditions. In this review, recent developments in enzyme immobilization for advanced functions including device applications are summarized from the viewpoint of micro/nano-level structural control, or nanoarchitectonics. Examples are roughly classified as organic soft matter, inorganic soft materials or integrated/organized media. Soft matter such as polymers and their hybrids provide a medium appropriate for entrapment and encapsulation of enzymes. In addition, self-immobilization based on self-assembly and array formation results in enzyme nanoarchitectures with soft functions. For the confinement of enzymes in nanospaces, hard inorganic mesoporous materials containing well-defined channels play an important role. Enzymes that are confined exhibit improved stability and controllable arrangement, which are useful for formation of functional relays and for their integration into artificial devices. Layer-by-layer assemblies as well as organized lipid assemblies such as Langmuir-Blodgett films are some of the best media for architecting controllable enzyme arrangements. The ultrathin forms of these films facilitate their connection with external devices such as electrodes and transistors. Artificial enzymes and enzyme-mimicking catalysts are finally briefly described as examples of enzyme functions involving non-biological materials. These systems may compensate for the drawbacks of natural enzymes, such as their instabilities under harsh conditions. We believe that enzymes and their mimics will be freely coupled, organized and integrated upon demand in near future technologies.

Inorganic nanoparticle multilayers using photo-crosslinking layer-by-layer assembly and their applications in nonvolatile memory devices

We introduce a general and facile method for the preparation of organic/inorganic nanoparticle (NP) nanocomposite multilayer films that allows vertical growth of various NP layers (i.e., metal or transition metal oxide NPs) in a densely packed structure. Our approach is based on the successive photo-crosslinking layer-by-layer (LbL) assembly between hydrophobic ligands onto a NP surface and photoinitiator (PI) molecules. Therefore, our approach requires neither the additional surface modification needed for well-defined NPs synthesized in organic media nor the deposition step that inserts a polymer layer bridge between adjacent inorganic NP layers in the preparation of traditional LbL-assembled NP films. We also demonstrate that photo-crosslinking LbL-assembled (metal oxide NP)n films could be used as a nonvolatile memory layer without a high-temperature thermal treatment, unlike conventional vacuum-deposition- or sol-gel-derived memory devices, which require thermal treatments at temperatures greater than 200 °C. This robust method could open a facile route for the design of functional NP-based electronic devices.

Organic field-effect transistor memory devices using discrete ferritin nanoparticle-based gate dielectrics

Organic field-effect transistor (OFET) memory devices made using highly stable iron-storage protein nanoparticle (NP) multilayers and pentacene semiconductor materials are introduced. These transistor memory devices have nonvolatile memory properties that cause reversible shifts in the threshold voltage (Vth ) as a result of charge trapping and detrapping in the protein NP (i.e., the ferritin NP with a ferrihydrite phosphate core) gate dielectric layers rather than the metallic NP layers employed in conventional OFET memory devices. The protein NP-based OFET memory devices exhibit good programmable memory properties, namely, large memory window ΔVth (greater than 20 V), a fast switching speed (10 μs), high ON/OFF current ratio (above 10(4)), and good electrical reliability. The memory performance of the devices is significantly enhanced by molecular-level manipulation of the protein NP layers, and various biomaterials with heme Fe(III) /Fe(II) redox couples similar to a ferrihydrite phosphate core are also employed as charge storage dielectrics. Furthermore, when these protein NP multilayers are deposited onto poly(ethylene naphthalate) substrates coated with an indium tin oxide gate electrode and a 50-nm-thick high-k Al2 O3 gate dielectric layer, the approach is effectively extended to flexible protein transistor memory devices that have good electrical performance within a range of low operating voltages (<10 V) and reliable mechanical bending stability.

Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON=OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems.

Interfacial nanoarchitectonics: lateral and vertical, static and dynamic

The exploration of nanostructures and nanomaterials is essential to the development of advanced functions. For such innovations, nanoarchitectonics has been proposed as a novel paradigm of nanotechnology aimed at assembling nanoscale structural units into predesigned configurations or arrangements. In this Feature Article, we provide an overview of several recent research works from the viewpoint of interfacial nanoarchitectonics with features developed in lateral directions or grown in vertical directions with construction on solid, static, or flexible dynamic surfaces. Lateral nanoarchitectonics at a static interface provides molecular organization by bottom-up nanoarchitectonics and can also be used to realize device integration by top-down nanoarchitectonics. In particular, in the latter case, the fabrication of novel devices, so-called atomic switches, are introduced as a demonstration of atomic-level electronics. Lateral nanoarchitectonics at dynamic interfaces is exemplified by 2D molecular patterning and molecular machine operation induced by macroscopic motion. The dynamic nature of interfaces enables us to operate molecular-sized machines by macroscopic mechanical stimuli such as our hand motion, which we refer to as hand-operated nanotechnology. Vertical nanoarchitectonics is mainly discussed in relation to layer-by-layer (LbL) assembly. By using this technique, we can assemble a variety of functional materials in ultrathin film structures of defined thickness and layer sequence. The organization of biomolecules (or even living cells) within thin films and their integration with device structures is exemplified. Finally, the anticipated research directions of interfacial nanoarchitectonics are described.

Electronic and optoelectronic materials and devices inspired by nature

Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities-some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the 'ubiquitous sensor network', all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow ('ionics and protonics') and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

Hydrophobic nanoparticle-based nanocomposite films using in situ ligand exchange layer-by-layer assembly and their nonvolatile memory applications

A robust method for preparing nanocomposite multilayers was developed to facilitate the assembly of well-defined hydrophobic nanoparticles (i.e., metal and transition metal oxide NPs) with a wide range of functionalities. The resulting multilayers were stable in both organic and aqueous media and were characterized by a high NP packing density. For example, inorganic NPs (including Ag, Au, Pd, Fe₃O₄, MnO₂) dispersed in organic media [corrected]were shown to undergo layer-by-layer assembly with amine-functionalized polymers to form nanocomposite multilayers while incurring minimal physical and chemical degradation of the inorganic NPs. In addition, the nanocomposite multilayer films formed onto flat and colloidal substrates could directly induce the adsorption of the electrostatically charged layers without the need for additional surface treatments. This approach is applicable to the preparation of electronic film devices, such as nonvolatile memory devices requiring a high memory performance (ON/OFF current ratio >10(3) and good memory stability).

Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films

We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb(2)O(5)) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb(2)O(5), was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 °C to form a Nb(2)O(5) film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb(2)O(5) films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as "electroforming", a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 ± 0.05 V(RESET) and 1.03 ± 0.06 V(SET)) with a high ON/OFF current ratio above 10(8). The reported approach offers opportunities for preparing Nb(2)O(5)-based resistive switching memory devices from solution process.

Resistive switching memory properties of layer-by-layer assembled enzyme multilayers

The properties of enzymes, which can cause reversible changes in currents through redox reactions in solution, are of fundamental and practical importance in bio-electrochemical applications. These redox properties of enzymes are often associated with their charge-trap sites. Here, we demonstrate that reversible changes in resistance in dried lysozyme (LYS) films can be generated by an externally applied voltage as a result of charge trap/release. Based on such changes, LYS can be used as resistive switching active material for nonvolatile memory devices. In this study, cationic LYS and anionic poly(styrene sulfonate) (PSS) layers were alternately deposited onto Pt-coated silicon substrates using a layer-by-layer assembly method. Then, top electrodes were deposited onto the top of LYS/PSS multilayers to complete the fabrication of the memory-like device. The LYS/PSS multilayer devices exhibited typical resistive switching characteristics with an ON/OFF current ratio above 10(2), a fast switching speed of 100 ns and stable performance. Furthermore, the insertion of insulating polyelectrolytes (PEs) between the respective LYS layers significantly enhanced the memory performance of the devices showing a high ON/OFF current ratio of ~10(6) and low levels of power consumption.