Charge injection in high-κ gate dielectrics of single-walled carbon nanotube thin-film transistors

Towards nanoscale electrical measurements in liquid by advanced KPFM techniques: a review

Fundamental mechanisms of energy storage, corrosion, sensing, and multiple biological functionalities are directly coupled to electrical processes and ionic dynamics at solid-liquid interfaces. In many cases, these processes are spatially inhomogeneous taking place at grain boundaries, step edges, point defects, ion channels, etc and possess complex time and voltage dependent dynamics. This necessitates time-resolved and real-space probing of these phenomena. In this review, we discuss the applications of force-sensitive voltage modulated scanning probe microscopy (SPM) for probing electrical phenomena at solid-liquid interfaces. We first describe the working principles behind electrostatic and Kelvin probe force microscopies (EFM & KPFM) at the gas-solid interface, review the state of the art in advanced KPFM methods and developments to (i) overcome limitations of classical KPFM, (ii) expand the information accessible from KPFM, and (iii) extend KPFM operation to liquid environments. We briefly discuss the theoretical framework of electrical double layer (EDL) forces and dynamics, the implications and breakdown of classical EDL models for highly charged interfaces or under high ion concentrations, and describe recent modifications of the classical EDL theory relevant for understanding nanoscale electrical measurements at the solid-liquid interface. We further review the latest achievements in mapping surface charge, dielectric constants, and electrodynamic and electrochemical processes in liquids. Finally, we outline the key challenges and opportunities that exist in the field of nanoscale electrical measurements in liquid as well as providing a roadmap for the future development of liquid KPFM.

Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes

Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.

Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution

We present a measurement technique, which we call the Pulsed Time-Domain Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and demonstrate its applicability for a broad range of 1D and 2D nanomaterials beyond carbon nanotubes. The Pulsed Time-Domain Measurement enables the quantification (density, energy level, and spatial distribution) of charged traps responsible for hysteresis. A physics-based model of the charge trapping process for a carbon nanotube field-effect transistor is presented and experimentally validated using the Pulsed Time-Domain Measurement. Leveraging this model, we discover a source of traps (surface traps) unique to devices with low-dimensional channels such as carbon nanotubes and nanowires (beyond interface traps which exist in today's silicon field-effect transistors). The different charge trapping mechanisms for interface traps and surface traps are studied based on their temperature dependencies. Through these advances, we are able to quantify the interface trap density for carbon nanotube field-effect transistors (∼3 × 10(13) cm(-2) eV(-1) near midgap), and compare this against a range of previously studied dielectric/semiconductor interfaces.

Detection of trapped charges in the blend films of polystyrene/SFDBAO electrets by electrostatic and Kelvin probe force microscopy

The charge trapping properties of the blend of polystyrene (PS) and a sterically hindered organic semiconductor SFDBAO (spiro[fluorene-9,7-dibenzo[c,h]acridin-5-one]) are investigated by electrostatic and Kelvin probe force microscopy (EFM and KPFM).

Ferroelectric barium titanate nanocubes as capacitive building blocks for energy storage applications

Highly uniform polymer-ceramic nanocomposite films with high energy density values were fabricated by exploiting the unique ability of monodomain, nonaggregated BaTiO3 colloidal nanocrystals to function as capacitive building blocks when dispersed into a weakly interacting dielectric matrix. Monodisperse, surface-functionalized ferroelectric 15 nm BaTiO3 nanoparticles have been selectively incorporated with a high packing density into poly(vinylidene fluoride-co-hexafluoropropene) (P(VDF-HFP)) leading to the formation of biphasic BaTiO3-P(VDF-HFP) nanocomposite films. A systematic investigation of the electrical properties of the nanocomposites by electrostatic force microscopy and conventional dielectric measurements reveals that polymer-ceramic film capacitor structures exhibit a ferroelectric relaxor-type behavior with an increased intrinsic energy density. The composite containing 7% BaTiO3 nanocrystals displays a high permittivity (ε = 21) and a relatively high energy density (E = 4.66 J/cm(3)) at 150 MV/m, which is 166% higher than that of the neat polymer and exceeds the values reported in the literature for polymer-ceramic nanocomposites containing a similar amount of nanoparticle fillers. The easy processing and electrical properties of the polymer-ceramic nanocomposites make them suitable for implementation in pulse power capacitors, high power systems and other energy storage applications.

A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials

A general method using a biased atomic force microscopy tip that allows a qualitative, fast, and reliable determination of key electronic properties such as metallic, n-, or p-doped characteristics has been reported for the first time. This method eliminates the detrimental effect of contact in the traditional transport measurement and is much simpler than the common-electrostatic force microscopy detection method, thus providing a powerful tool for fast characterizations of nanomaterials.