Characterization and manipulation of mixed phase nanodomains in highly strained BiFeO3 thin films

The First Demonstration of Strain-Controlled Periodic Ferroelectric Domains with Superior Piezoelectric Response in Molecular Materials

Achieving a periodic domain structure in ferroelectric materials to tailor the macroscopic properties or realize new functions has always been a hot topic. However, methods to construct periodic domain structures, such as epitaxial growth, direct writing by scanning tips, and the patterned electrode method, are difficult or inefficient to implement in emerging molecular ferroelectrics, which have the advantages of lightweight, flexibility, biocompatibility, etc. An efficient method for constructing and controlling periodic domain structures is urgently needed to facilitate the development of molecular ferroelectrics in nanoelectronic devices. In this work, it is demonstrated that large-area, periodic and controllable needle-like domain structures can be achieved in thin films of the molecular ferroelectric trimethylchloromethyl ammonium trichlorocadmium (TMCM-CdCl₃ ) upon the application of tensile strain. The domain evolution under various tensile strains can be clearly observed, and such processes are accordingly identified. Furthermore, the domain wall exhibits a superior piezoelectric response, with up to fivefold enhancement compared to that of the pristine samples. Such large-area tunable periodic domain structure and abnormally strong piezoresponse are not only of great interests in fundamental studies, but also highly important in the future applications in functional molecular materials.

Triple-Wavelength Lasing with a Stabilized β-LaBSiO5:Nd3+ Crystal

Multi-wavelength lasers, especially the triple-wavelength laser around 1060 nm, could be produced by the ⁴F_3/2 → ⁴I_11/2 transition of Nd³⁺ and present numerous challenges and opportunities in the field of optoelectronics. The Nd³⁺-doped high-temperature phase of LaBSiO₅ (β-LBSO) is an ideal crystal to produce triple-wavelength lasers; however, the crystal growth is challenging because of the phase transition from β-LBSO to low-temperature phase (α-LBSO) at 162 °C. This phase transition is successfully suppressed when the doping content of Nd³⁺ is larger than 6.3 at. %, and the Nd³⁺-doped β-LBSO is stable at room temperature. The local disorder of BO₄ tetrahedra due to Nd³⁺ doping is essential to the stabilization of β-LBSO. For the first time, the β-LBSO:8%Nd³⁺ crystal with a dimension of 1.8 × 1.8 × 1.8 cm³ is obtained through the top-seeded solution method. The crystal shows strong optical absorption in the range of 785-815 nm, matching well with the commercial laser diode pumping source. The optical emission of ⁴F_3/2 → ⁴I_11/2 splits into four peaks with the highest optical emission cross section of 2.14 × 10^-20 cm² at 1068 nm. The continuous-wave triple-wavelength generation of coherent light at 1047, 1071, and 1092 nm is achieved with the highest output power of 235 mW and efficiency of 12.1%.

Peculiar piezoelectricity of atomically thin planar structures

The emergence of piezoelectricity in two-dimensional (2D) materials has represented a milestone towards employing low-dimensional structures for future technologies. 2D piezoelectric materials possess unique and unprecedented characteristics that cannot be found in other morphologies; therefore, the applications of piezoelectricity can be substantially extended. By reducing the thickness into the 2D realm, piezoelectricity might be induced in otherwise non-piezoelectric materials. The origin of the enhanced piezoelectricity in such thin planes is attributed to the loss of centrosymmetry, altered carrier concentration, and change in local polarization and can be efficiently tailored via surface modifications. Access to such materials is important from a fundamental research point of view, to observe the extraordinary interactions between free charge carriers, phonons and photons, and also with respect to device development, for which planar structures provide the required compatibility with the large-scale fabrication technologies of integrated circuits. The existence of piezoelectricity in 2D materials presents great opportunities for applications in various fields of electronics, optoelectronics, energy harvesting, sensors, actuators and biotechnology. Additionally, 2D flexible nanostructures with superior piezoelectric properties are distinctive candidates for integration into nano-scale electromechanical systems. Here we fundamentally review the state of the art of 2D piezoelectric materials from both experimental and theoretical aspects and report the recent achievements in the synthesis, characterization and applications of these materials.

Progress in BiFeO3-based heterostructures: materials, properties and applications

BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.

Nanosecond Optically Induced Phase Transformation in Compressively Strained BiFeO_{3} on LaAlO_{3}

Above-band-gap optical illumination of compressively strained BiFeO_{3} induces a transient reversible transformation from a state of coexisting tilted tetragonal-like and rhombohedral-like phases to an untilted tetragonal-like phase. Time-resolved synchrotron x-ray diffraction reveals that the transformation is induced by an ultrafast optically induced lattice expansion that shifts the relative free energies of the tetragonal-like and rhombohedral-like phases. The transformation proceeds at interfaces between regions of the tetragonal-like phase and regions of a mixture of tilted phases, consistent with the motion of a phase boundary. The optically induced transformation demonstrates that there are new optically driven routes towards nanosecond-scale control of phase transformations in ferroelectrics and multiferroics.

Deterministic optical control of room temperature multiferroicity in BiFeO3 thin films

Controlling ferroic orders (ferroelectricity, ferromagnetism and ferroelasticity) by optical methods is a significant challenge due to the large mismatch in energy scales between the order parameter coupling strengths and the incident photons. Here, we demonstrate an approach to manipulate multiple ferroic orders in an epitaxial mixed-phase BiFeO₃ thin film at ambient temperature via laser illumination. Phase-field simulations indicate that a light-driven flexoelectric effect allows the targeted formation of ordered domains. We also achieved precise sequential laser writing and erasure of different domain patterns, which demonstrates a deterministic optical control of multiferroicity at room temperature. As ferroic orders directly influence susceptibility and conductivity in complex materials, our results not only shed light on the optical control of multiple functionalities, but also suggest possible developments for optoelectronics and related applications.

Controllable defect driven symmetry change and domain structure evolution in BiFeO3 with enhanced tetragonality

Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, the accurate control of the concentration of defects remains a big challenge. In this work, ion implantation, which can provide controllable point defects, allows us to produce a controlled defect driven true super-tetragonal (T) phase with a single-domain-state in ferroelectric BiFeO3 thin films. This point-defect engineering is found to drive the phase transition from the as-grown mixed rhombohedral-like (R) and tetragonal-like (MC) phase to true tetragonal (T) symmetry and induce the stripe multi-nanodomains to a single domain state. By further increasing the injected dose of the He ion, we demonstrate an enhanced tetragonality super-tetragonal (super-T) phase with the largest c/a ratio of ∼1.3 that has ever been experimentally achieved in BiFeO3. A combination of the morphology change and domain evolution further confirms that the mixed R/MC phase structure transforms to the single-domain-state true tetragonal phase. Moreover, the re-emergence of the R phase and in-plane nanoscale multi-domains after heat treatment reveal the memory effect and reversible phase transition and domain evolution. Our findings demonstrate the reversible control of R-Mc-T-super T symmetry changes (leading to the creation of true T phase BiFeO3 with enhanced tetragonality) and multidomain-single domain structure evolution through controllable defect engineering. This work also provides a pathway to generate large tetragonality (or c/a ratio) that could be extended to other ferroelectric material systems (such as PbTiO3, BaTiO3 and HfO2) which might lead to strong polarization enhancement.

Designing Morphotropic Phase Composition in BiFeO3

In classical morphotropic piezoelectric materials, rhombohedral and tetragonal phase variants can energetically compete to form a mixed phase regime with improved functional properties. While the discovery of morphotropic-like phases in multiferroic BiFeO₃ films has broadened this definition, accessing these phase spaces is still typically accomplished through isovalent substitution or heteroepitaxial strain which do not allow for continuous modification of phase composition postsynthesis. Here, we show that it is possible to use low-energy helium implantation to tailor morphotropic phases of epitaxial BiFeO₃ films postsynthesis in a continuous and iterative manner. Applying this strain doping approach to morphotropic films creates a new phase space based on internal and external lattice stress that can be seen as an analogue to temperature-composition phase diagrams of classical morphotropic ferroelectric systems.

High-resolution angle-resolved lateral piezoresponse force microscopy: Visualization of in-plane piezoresponse vectors

Piezoresponse force microscopy (PFM) is a widely used tool for ferroelectric domain imaging. Lateral PFM (LPFM) utilizes the torsional vibration mode of a probe cantilever; it can distinguish ferroelectric domains having different polarizations with respect to the axis perpendicular to the cantilever, but it is blind to the parallel axis innately. We introduce a high-resolution angle-resolved-LPFM technique that is capable of visualizing full two-dimensional in-plane piezoresponse vector fields. The LPFM signal is analyzed for each pixel with respect to the sample-probe orientation angle with the aid of an image registration technique, and the corresponding local in-plane piezoresponse vector is deduced from the amplitude and phase of the trigonometric curve fitting. This technique provides a pathway for the visualization of complicated ferroelectric and piezoelectric structures.

Ferroelectric Domain Studies of Patterned (001) BiFeO3 by Angle-Resolved Piezoresponse Force Microscopy

We have studied the ferroelectric domains in (001) BiFeO3 (BFO) films patterned into mesas with various aspect ratios, using angle-resolved piezoresponse force microscope (AR-PFM), which can image the in-plane polarization component with an angular resolution of 30°. We observed not only stable polarization variants, but also meta-stable polarization variants, which can reduce the charge accumulated at domain boundaries. We considered the number of neighboring domains that are in contact, in order to analyze the complexity of the ferroelectric domain structure. Comparison of the ferroelectric domains from the patterned and unpatterned regions showed that the elastic relaxation induced by removal of the film surrounding the mesas led to a reduction of the average number of neighboring domains, indicative of a decrease in domain complexity. We also found that the rectangular BFO patterns with high aspect ratio had a simpler domain configuration and enhanced piezoelectric characteristics than square-shaped mesas. Manipulation of the ferroelectric domains by controlling the aspect ratio of the patterned BFO thin film mesas can be useful for nanoelectronic applications.

Impact of Isovalent and Aliovalent Doping on Mechanical Properties of Mixed Phase BiFeO3

In this study, we report the effect of doping in morphotropic BiFeO₃ (BFO) thin films on mechanical properties, revealing variations in the elasticity across the competing phases and their boundaries. Spectroscopic force-distance (F-D) curves and force mapping images by AFM are used to characterize the structure and elastic properties of three BFO thin-film candidates (pure-BFO, Ca-doped BFO, La-doped BFO). We show that softening behavior is observed in isovalent La-doped BFO, whereas hardening is seen in aliovalent Ca-doped BFO. Furthermore, quantitative F-D measurements are extended to show threshold strengths for phase transitions, revealing their dependence on doping in the system. First-principles simulation methods are also employed to understand the observed mechanical properties in pure and doped BFO thin films and to provide microscopic insight on them. These results provide key insight into doping as an effective control parameter to tune nanomechanical properties and suggest an alternative framework to control coupled ferroic functionalities at the nanoscale.

Structural and electronic transformation pathways in morphotropic BiFeO3

Phase boundaries in multiferroics, in which (anti-)ferromagnetic, ferroelectric and ferroelastic order parameters coexist, enable manipulation of magnetism and electronic properties by external electric fields through switching of the polarization in the material. It has been shown that the strain-driven morphotropic phase boundaries in a single-phase multiferroic such as BiFeO₃ (BFO) can exhibit distinct electronic conductivity. However, the control of ferroelectric and phase switching and its correlation with phase boundary conductivity in this material has been a significant challenge. Supported by a thermodynamic approach, here we report a concept to precisely control different switching pathways and the associated control of electronic conductivity in mixed phase BFO. This work demonstrates a critical step to control and use non-volatile strain-conductivity coupling at the nanoscale. Beyond this observation, it provides a framework for exploring a route to control multiple order parameters coupled to ferroelastic and ferroelectric order in multiferroic materials.

Photocarrier transport and dynamics in mixed-phase BiFeO3 films

We report a remarkable photoinduced relaxation process and its dependence of thickness and temperature in mixed-phase BiFeO₃ films grown on (001) LaAlO₃ substrates. When the films are illuminated by the light above the bandgap, their resistances are reduced with the increase of temperature. The photoinduced change of resistance reaches to the maximum of about 2.17 × 10^5% at 300 K. It is noted that the relaxation processes of the resistance are significantly different between T-like phase and T-R mixed phase due to structural strain, symmetry breaking and built-in electric field at the phase boundaries. These results provide more insights into intrinsic mechanisms of mixed-phase multiferroic materials and potential applications in all-oxide photoelectric devices.

Electrical and mechanical switching of ferroelectric polarization in the 70 nm BiFeO3 film

Ferroelectric polarization switching and its domain evolution play a key role on the macroscopic electric properties of ferroelectric or piezoelectric devices. Mechanical switching has been reported recently in ~5 nm BaTiO3 and PbZr0.2Ti0.8O3 epitaxial films; however it is still a challenge for a mechanical force to switch polarization of a slightly thicker film in the same way as an electric field. Here, we report that the polarization of a 70 nm BiFeO3 epitaxial film can be completely switched by a mechanical force, and its domain evolution is similar to that observed with electrical switching. With the gradual increase of the field/force, new domains nucleate preferentially at domain boundaries, the μm-size domains commonly decompose to a mass of nm-size domains, and finally they may reorganize to μm-size domains which undergo 180(°) polarization switching through multi steps. Importantly, the complete mechanical switching of polarization was also established in the (0 0 1) film with a smooth surface. Furthermore, either upward or downward polarization can be read out nondestructively by a constant current. Our study sheds light on prospective applications of ferroelectrics in the absence of an electric field, such as memory devices and other micro-electromechanical systems.

Enhancement of the anisotropic photocurrent in ferroelectric oxides by strain gradients

The phase separation of multiple competing structural/ferroelectric phases has attracted particular attention owing to its excellent electromechanical properties. Little is known, however, about the strain-gradient-induced electronic phenomena at the interface of competing structural phases. Here, we investigate the polymorphic phase interface of bismuth ferrites using spatially resolved photocurrent measurements, present the observation of a large enhancement of the anisotropic interfacial photocurrent by two orders of magnitude, and discuss the possible mechanism on the basis of the flexoelectric effect. Nanoscale characterizations of the photosensitive area through position-sensitive angle-resolved piezoresponse force microscopy and electron holography techniques, in conjunction with phase field simulation, reveal that regularly ordered dipole-charged domain walls emerge. These findings offer practical implications for complex oxide optoelectronics.

Studying the Polarization Switching in Polycrystalline BiFeO3 Films by 2D Piezoresponse Force Microscopy

For rhombohedral multiferroelectrics, non-180° ferroelectric domain switching may induce ferroelastic and/or (anti-)ferromagnetic effect. So the determination and control of ferroelectric domain switching angles is crucial for nonvolatile information storage and exchange-coupled magnetoelectric devices. We try to study the intrinsic characters of polarization switching in BiFeO₃ by introducing a special data processing method to determine the switching angle from 2D PFM (Piezoresponse Force Microscopy) images of randomly oriented samples. The response surface of BiFeO₃ is first plotted using the piezoelectric tensor got from first principles calculations. Then from the normalized 2D PFM signals before and after switching, the switching angles of randomly oriented BiFeO₃ grains can be determined through numerical calculations. In the polycrystalline BiFeO₃ films, up to 34% of all switched area is that with original out-of-plane (OP) polarization parallel to the poling field. 71° polarization switching is more favorable, with the area percentages of 71°, 109° and 180° domain switching being about 42%, 29% and 29%, respectively. Our analysis further reveals that IP stress and charge migration have comparable effect on switching, and they are sensitive to the geometric arrangements. This work helps exploring a route to control polarization switching in BiFeO₃, so as to realize desirable magnetoelectric coupling.

Mapping of ferroelectric domain structure using angle-resolved piezoresponse force microscopy

Angle-resolved piezoresponse force microscopy (AR-PFM) was used in conjunction with electron backscatter diffraction (EBSD) to study ferroelectric domain structure in polycrystalline near-morphotropic lead zirconate titanate (PZT). We introduce the details of AR-PFM including experimental method, the process to generate AR-PFM maps, and the interpretation of AR-PFM map, using domain patterns observed in bulk PZT. The spatial distortion caused by scanner creep and non-linearity in scanning probe microscopy was corrected through image registration, taking advantage of the features present in topography images. Domain structures were mapped using AR-PFM data, and the maps consistently show alternating piezoresponse axes in a lamellar pattern of non-180° domain structure. Comparison of AR-PFM and EBSD data showed a discrepancy between the direction of lateral surface displacement and the in-plane polarization direction. Additionally, using suitable domain patterns, AR-PFM enabled discrimination between the tetragonal and rhombohedral phases at the sub-grain scale.

Nanoscale mechanical softening of morphotropic BiFeO3

Mechanical switching can be used to form phase-transformed areas in mixed-phase bismuth ferrite thin films, which might be exploited to yield various soft elastic areas with greatly reduced Young's modulus on the nanoscale. Due to the mechanically susceptible nature of morphotropic phase boundaries in multiferroics, combined elastic control of electronic, magnetic, and ferroelectric properties becomes possible.

Persistent photoconductivity in strained epitaxial BiFeO3 thin films

A drastic change in the conductivity of strained BiFeO3 (BFO) films is observed after illuminating them with above-band gap light. This has been termed as persistent photoconductivity. The enhanced conductivity decays exponentially with time. A trapping character of the sub-band levels and their subsequent gradual emptying is proposed as a possible mechanism.

Effects of Interfaces on the Structure and Novel Physical Properties in Epitaxial Multiferroic BiFeO₃ Ultrathin Films

In functional oxide films, different electrical/mechanical boundaries near film surfaces induce rich phase diagrams and exotic phenomena. In this paper, we review some key points which underpin structure, phase transition and related properties in BiFeO₃ ultrathin films. Compared with the bulk counterparts, we survey the recent results of epitaxial BiFeO₃ ultrathin films to illustrate how the atomic structure and phase are markedly influenced by the interface between the film and the substrate, and to emphasize the roles of misfit strain and depolarization field on determining the domain patterns, phase transformation and associated physical properties of BiFeO₃ ultrathin films, such as polarization, piezoelectricity, and magnetism. One of the obvious consequences of the misfit strain on BiFeO₃ ultrathin films is the emergence of a sequence of phase transition from tetragonal to mixed tetragonal & rhombohedral, the rhombohedral, mixed rhombohedral & orthorhombic, and finally orthorhombic phases. Other striking features of this system are the stable domain patterns and the crossover of 71° and 109° domains with different electrical boundary conditions on the film surface, which can be controlled and manipulated through the depolarization field. The external field-sensitive enhancements of properties for BiFeO₃ ultrathin films, including the polarization, magnetism and morphotropic phase boundary-relevant piezoelectric response, offer us deeper insights into the investigations of the emergent properties and phenomena of epitaxial ultrathin films under various mechanical/electrical constraints. Finally, we briefly summarize the recent progress and list open questions for future study on BiFeO₃ ultrathin films.