Spatially resolved electrostatic potential and photocurrent generation in carbon nanotube array devices

Advanced 1D heterostructures based on nanotube templates and molecules

Recent advancements in materials science have shed light on the potential of exploring hierarchical assemblies of molecules on surfaces, driven by both fundamental and applicative challenges. This field encompasses diverse areas including molecular storage, drug delivery, catalysis, and nanoscale chemical reactions. In this context, the utilization of nanotube templates (NTs) has emerged as promising platforms for achieving advanced one-dimensional (1D) molecular assemblies. NTs offer cylindrical, crystalline structures with high aspect ratios, capable of hosting molecules both externally and internally (Mol@NT). Furthermore, NTs possess a wide array of available diameters, providing tunability for tailored assembly. This review underscores recent breakthroughs in the field of Mol@NT. The first part focuses on the diverse panorama of structural properties in Mol@NT synthesized in the last decade. The advances in understanding encapsulation, adsorption, and ordering mechanisms are detailed. In a second part, the review highlights the physical interactions and photophysics properties of Mol@NT obtained by the confinement of molecules and nanotubes in the van der Waals distance regime. The last part of the review describes potential applicative fields of these 1D heterostructures, providing specific examples in photovoltaics, luminescent materials, and bio-imaging. A conclusion gathers current challenges and perspectives of the field to foster discussion in related communities.

Low-Temperature Electroluminescence Excitation Mapping of Excitons and Trions in Short-Channel Monochiral Carbon Nanotube Devices

Single-walled carbon nanotubes as emerging quantum-light sources may fill a technological gap in silicon photonics due to their potential use as near-infrared, electrically driven, classical or nonclassical emitters. Unlike in photoluminescence, where nanotubes are excited with light, electrical excitation of single tubes is challenging and heavily influenced by device fabrication, architecture, and biasing conditions. Here we present electroluminescence spectroscopy data of ultra-short-channel devices made from (9,8) carbon nanotubes emitting in the telecom band. Emissions are stable under current biasing, and no enhanced suppression is observed down to 10 nm gap size. Low-temperature electroluminescence spectroscopy data also reported exhibit cold emission and line widths down to 2 meV at 4 K. Electroluminescence excitation maps give evidence that carrier recombination is the mechanism for light generation in short channels. Excitonic and trionic emissions can be switched on and off by gate voltage, and corresponding emission efficiency maps were compiled. Insights are gained into the influence of acoustic phonons on the line width, absence of intensity saturation and exciton-exciton annihilation, environmental effects such as dielectric screening and strain on the emission wavelength, and conditions to suppress hysteresis and establish optimum operation conditions.

A tool box to ascertain the nature of doping and photoresponse in single-walled carbon nanotubes

The effect of doping on the electronic properties in bulk single-walled carbon nanotube (SWCNT) samples is studied for the first time using a new in situ Raman spectroelectrochemical method, and further verified by DFT calculations and photoresponse. We use p-/n-doped SWCNTs prepared by diazonium reactions as a versatile chemical strategy to control the SWCNT behavior. The measured and calculated data testify an acceptor effect of 4-aminobenzenesulfonic acid (p-doping), and a donor effect (n-doping) in the case of benzyl alcohol. In addition, pristine and covalently functionalized SWCNTs were used for the preparation of photoactive film electrodes. The photocathodic current in the photoelectrochemical cell is consistently modulated by the doping group. These results validate the in situ Raman spectroelectrochemistry as a unique tool box for predicting the electronic properties of functionalized SWCNTs in the form of thin films and their operational functionality in thin film devices for future optoelectronic applications.

Photocurrent spectroscopy of dye-sensitized carbon nanotubes

Monochiral (7,5) single walled carbon nanotubes (SWCNTs) are integrated into a field effect transistor device in which the built-in electric field at the nanotube/metal contact allows for exciton separation under illumination. Variable wavelength spectroscopy and 2D surface mapping of devices consisting of 10-20 nanotubes are performed in the visible region and a strong correlation between the nanotube's second optical transition (S₂₂) and the photocurrent is found. After integration, the SWCNTs are non-covalently modified with three different fluorescent dye molecules with off-resonant absorption maxima at 532 nm, 565 nm, and 610 nm. The dyes extend the absorption properties of the nanotube and contribute to the photocurrent. This approach holds promise for the development of photo-detectors and for applications in photovoltaics and biosensing.

Contact-dominated transport in carbon nanotube thin films: toward large-scale fabrication of high performance photovoltaic devices

Semiconducting single-walled carbon nanotubes (s-SWCNTs) have been widely regarded as potential channel materials for not only replacing silicon to extend Moore's law but also for building high performance optoelectronic devices. To realize these goals, high quality s-SWCNTs and contacts are needed to outperform devices based on traditional materials such as silicon. For a high quality conducting or active channel, the ideal CNTs consist of a pure s-SWCNTs array with a confined pitch of less than 10 nm via e.g., chemical vapor deposition (CVD) methods, although this has not been realized experimentally. On the other hand, significant progress has been made on solution-processed CNTs. However, only network and low performance optoelectronic devices have been realized. In this study, we systematically studied the performance of devices using solution-processed CNT films with different s-SWCNT purity, with particular emphasis being placed on disentangling those metallic-CNTs (m-CNTs)-dominated low performance and contacts-dominated high performance devices. We demonstrated that using high purity s-SWCNTs allowed for the construction of high performance diodes via a doping-free method. These diodes behave similarly to those based on individual CVD-grown s-CNTs, resulting in 250 mV photovoltage for a typical single diode and more than 4.35 V for cascading cells using the virtual contact technique and thus paving the way for large scale fabrication of higher performance photovoltaic devices using readily available solution processed CNTs.

Length-Sorted, Large-Diameter, Polyfluorene-Wrapped Semiconducting Single-Walled Carbon Nanotubes for High-Density, Short-Channel Transistors

Samples of highly enriched semiconducting SWCNTs with average diameters of 1.35 nm have been prepared by combining PODOF polymer wrapping with size-exclusion chromatography. The purity of the material was determined to be >99.7% from the transfer characteristics of short-channel transistors comprising densely aligned sc-SWCNTs. The transistors have a hole mobility of up to 297 cm(2)V(-1) s(-1) and an On/Off ratio as high as 2 × 10(8).

Room temperature infrared imaging sensors based on highly purified semiconducting carbon nanotubes

High performance infrared (IR) imaging systems usually require expensive cooling systems, which are highly undesirable. Here we report the fabrication and performance characteristics of room temperature carbon nanotube (CNT) IR imaging sensors. The CNT IR imaging sensor is based on aligned semiconducting CNT films with 99% purity, and each pixel or device of the imaging sensor consists of aligned strips of CNT asymmetrically contacted by Sc and Pd. We found that the performance of the device is dependent on the CNT channel length. While short channel devices provide a large photocurrent and a rapid response of about 110 μs, long channel length devices exhibit a low dark current and a high signal-to-noise ratio which are critical for obtaining high detectivity. In total, 36 CNT IR imagers are constructed on a single chip, each consists of 3 × 3 pixel arrays. The demonstrated advantages of constructing a high performance IR system using purified semiconducting CNT aligned films include, among other things, fast response, excellent stability and uniformity, ideal linear photocurrent response, high imaging polarization sensitivity and low power consumption.

Hot spot dynamics in carbon nanotube array devices

We report on the dynamics of spatial temperature distributions in aligned semiconducting carbon nanotube array devices with submicrometer channel lengths. By using high-resolution optical microscopy in combination with electrical transport measurements, we observe under steady state bias conditions the emergence of time-variable, local temperature maxima with dimensions below 300 nm, and temperatures above 400 K. On the basis of time domain cross-correlation analysis, we investigate how the intensity fluctuations of the thermal radiation patterns are correlated with the overall device current. The analysis reveals the interdependence of electrical current fluctuations and time-variable hot spot formation that limits the overall device performance and, ultimately, may cause device degradation. The findings have implications for the future development of carbon nanotube-based technologies.

Photocurrent spectroscopy of (n, m) sorted solution-processed single-walled carbon nanotubes

Variable-wavelength photocurrent microscopy and photocurrent spectroscopy are used to study the photoresponse of (n, m) sorted single-walled carbon nanotube (SWNT) devices. The measurements of (n, m) pure SWCNT devices demonstrate the ability to study the wavelength-dependent photoresponse in situ in a device configuration and deliver photocurrent spectra that reflect the population of the source material. Furthermore, we show that it is possible to map and determine the chirality population within a working optoelectronic SWCNT device.

Graphene nanoribbon blends with P3HT for organic electronics

In organic field-effect transistors (OFETs) the electrical characteristics of polymeric semiconducting materials suffer from the presence of structural/morphological defects and grain boundaries as well as amorphous domains within the film, hindering an efficient transport of charges. To improve the percolation of charges we blend a regioregular poly(3-hexylthiophene) (P3HT) with newly designed N = 18 armchair graphene nanoribbons (GNRs). The latter, prepared by a bottom-up solution synthesis, are expected to form solid aggregates which cannot be easily interfaced with metallic electrodes, limiting charge injection at metal-semiconductor interfaces, and are characterized by a finite size, thus by grain boundaries, which negatively affect the charge transport within the film. Both P3HT and GNRs are soluble/dispersible in organic solvents, enabling the use of a single step co-deposition process. The resulting OFETs show a three-fold increase in the charge carrier mobilities in blend films, when compared to pure P3HT devices. This behavior can be ascribed to GNRs, and aggregates thereof, facilitating the transport of the charges within the conduction channel by connecting the domains of the semiconductor film. The electronic characteristics of the devices such as the Ion/Ioff ratio are not affected by the addition of GNRs at different loads. Studies of the electrical characteristics under illumination for potential use of our blend films as organic phototransistors (OPTs) reveal a tunable photoresponse. Therefore, our strategy offers a new method towards the enhancement of the performance of OFETs, and holds potential for technological applications in (opto)electronics.

Broadband, polarization-sensitive photodetector based on optically-thick films of macroscopically long, dense, and aligned carbon nanotubes

Increasing performance demands on photodetectors and solar cells require the development of entirely new materials and technological approaches. We report on the fabrication and optoelectronic characterization of a photodetector based on optically-thick films of dense, aligned, and macroscopically long single-wall carbon nanotubes. The photodetector exhibits broadband response from the visible to the mid-infrared under global illumination, with a response time less than 32 μs. Scanning photocurrent microscopy indicates that the signal originates at the contact edges, with an amplitude and width that can be tailored by choosing different contact metals. A theoretical model demonstrates the photothermoelectric origin of the photoresponse due to gradients in the nanotube Seebeck coefficient near the contacts. The experimental and theoretical results open a new path for the realization of optoelectronic devices based on three-dimensionally organized nanotubes.

Electroluminescence in single layer MoS2

We detect electroluminescence in single layer molybdenum disulfide (MoS2) field-effect transistors built on transparent glass substrates. By comparing the absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8 eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, could be promising for novel optoelectronic devices, such as two-dimensional light detectors and emitters.