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Shi S, Zhao Y, Sun J, Yu G, Zhou H, Wang J. Strain-mediated multistate skyrmion for neuron devices. NANOSCALE 2024; 16:12013-12020. [PMID: 38805240 DOI: 10.1039/d4nr01464b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
Magnetic skyrmions are potential candidates for neuromorphic computing because of their inherent topological stability, low drive current density and nanoscale size. However, an artificial neuron device based on current-driven skyrmion motion cannot satisfy the requirement of energy efficiency and integration density due to hundreds of millions of interconnected neurons and synapses present in the deep networks. Here, we present a compact and energy efficient skyrmion-based artificial neuron consisting of ferromagnetic/heavy metal/ferroelectric layers which uses strain-mediated voltage manipulation of skyrmion states to mimic the Integrate-and-Fire (IF) function of biological neurons. By implementation of a spiking neural network (SNN) based on the proposed skyrmionic neuronal devices, it can achieve a high accuracy of 95.08% on a modified National Institute of Standards and Technology (MNIST) handwritten digit dataset, as well as a low power consumption of ∼46.8 fJ per epoch per neuron. The present work suggests a novel way to realize energy-efficient and high-density neuromorphic computing.
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Affiliation(s)
- Shengbin Shi
- Department of Engineering Mechanics, Zhejiang University, Zheda Road 38, Hangzhou, Zhejiang 310027, China.
| | - Yunhong Zhao
- Zhejiang Laboratory, Hangzhou 311100, Zhejiang, China
| | - Jiajun Sun
- Department of Engineering Mechanics, Zhejiang University, Zheda Road 38, Hangzhou, Zhejiang 310027, China.
| | - Guoliang Yu
- Key Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Haomiao Zhou
- Key Laboratory of Electromagnetic Wave Information Technology and Metrology of Zhejiang Province, College of Information Engineering, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Jie Wang
- Department of Engineering Mechanics, Zhejiang University, Zheda Road 38, Hangzhou, Zhejiang 310027, China.
- Zhejiang Laboratory, Hangzhou 311100, Zhejiang, China
- Key Laboratory of Soft Machines and Smart Devices of Zhejiang Province, Zhejiang University, Zheda Road 38, Hangzhou, Zhejiang 310027, China
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2
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Loizos M, Rogdakis K, Luo W, Zimmermann P, Hinderhofer A, Lukić J, Tountas M, Schreiber F, Milić JV, Kymakis E. Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures. NANOSCALE HORIZONS 2024; 9:1146-1154. [PMID: 38767026 PMCID: PMC11195346 DOI: 10.1039/d4nh00104d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2024] [Accepted: 05/03/2024] [Indexed: 05/22/2024]
Abstract
Hybrid halide perovskites are attractive candidates for resistive switching memories in neuromorphic computing applications due to their mixed ionic-electronic conductivity. Moreover, their exceptional optoelectronic characteristics make them effective as semiconductors in photovoltaics, opening perspectives for self-powered memory elements. These devices, however, remain unexploited, which is related to the variability in their switching characteristics, weak endurance, and retention, which limit their performance and practical use. To address this challenge, we applied low-dimensional perovskite capping layers onto 3D mixed halide perovskites using two perfluoroarene organic cations, namely (perfluorobenzyl)ammonium and (perfluoro-1,4-phenylene)dimethylammonium iodide, forming Ruddlesden-Popper and Dion-Jacobson 2D perovskite phases, respectively. The corresponding mixed-dimensional perovskite heterostructures were used to fabricate resistive switching memories based on perovskite solar cell architectures, showing that the devices based on perfluoroarene heterostructures exhibited enhanced performance and stability in inert and ambient air atmosphere. This opens perspectives for multidimensional perovskite materials in durable self-powered memory elements in the future.
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Affiliation(s)
- Michalis Loizos
- Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece.
| | - Konstantinos Rogdakis
- Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece.
- Institute of Emerging Technologies (i-EMERGE) of HMU Research Center, Heraklion 71410, Crete, Greece
| | - Weifan Luo
- Adolphe Merkle Institute, University of Fribourg, Fribourg 1700, Switzerland.
| | - Paul Zimmermann
- Institute of Applied Physics, University of Tübingen, Tübingen 72076, Germany
| | | | - Jovan Lukić
- Adolphe Merkle Institute, University of Fribourg, Fribourg 1700, Switzerland.
| | - Marinos Tountas
- Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece.
| | - Frank Schreiber
- Institute of Applied Physics, University of Tübingen, Tübingen 72076, Germany
| | - Jovana V Milić
- Adolphe Merkle Institute, University of Fribourg, Fribourg 1700, Switzerland.
| | - Emmanuel Kymakis
- Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece.
- Institute of Emerging Technologies (i-EMERGE) of HMU Research Center, Heraklion 71410, Crete, Greece
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3
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Qiu J, Li J, Li W, Wang K, Xiao T, Su H, Suk CH, Zhou X, Zhang Y, Guo T, Wu C, Ooi PC, Kim TW. Silver Nanowire Networks with Moisture-Enhanced Learning Ability. ACS APPLIED MATERIALS & INTERFACES 2024; 16:10361-10371. [PMID: 38362885 DOI: 10.1021/acsami.3c17438] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/17/2024]
Abstract
The human brain possesses a remarkable ability to memorize information with the assistance of a specific external environment. Therefore, mimicking the human brain's environment-enhanced learning abilities in artificial electronic devices is essential but remains a considerable challenge. Here, a network of Ag nanowires with a moisture-enhanced learning ability, which can mimic long-term potentiation (LTP) synaptic plasticity at an ultralow operating voltage as low as 0.01 V, is presented. To realize a moisture-enhanced learning ability and to adjust the aggregations of Ag ions, we introduced a thin polyvinylpyrrolidone (PVP) coating layer with moisture-sensitive properties to the surfaces of the Ag nanowires of Ag ions. That Ag nanowire network was shown to exhibit, in response to the humidity of its operating environment, different learning speeds during the LTP process. In high-humidity environments, the synaptic plasticity was significantly strengthened with a higher learning speed compared with that in relatively low-humidity environments. Based on experimental and simulation results, we attribute this enhancement to the higher electric mobility of the Ag ions in the water-absorbed PVP layer. Finally, we demonstrated by simulation that the moisture-enhanced synaptic plasticity enabled the device to adjust connection weights and delivery modes based on various input patterns. The recognition rate of a handwritten data set reached 94.5% with fewer epochs in a high-humidity environment. This work shows the feasibility of building our electronic device to achieve artificial adaptive learning abilities.
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Affiliation(s)
- Jiawen Qiu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Junlong Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Wenhao Li
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Kun Wang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Tianyu Xiao
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Hao Su
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Chan Hee Suk
- Department of Electronic and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Xiongtu Zhou
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Yongai Zhang
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Tailiang Guo
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Chaoxing Wu
- College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
| | - Poh Choon Ooi
- Institute of Microengineering and Nanoelectronics (IMEN), University Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia
| | - Tae Whan Kim
- Department of Electronic and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea
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4
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Ju D, Kim S, Lee S, Kim S. Double-Forming Mechanism of TaO x-Based Resistive Memory Device and Its Synaptic Applications. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6184. [PMID: 37763461 PMCID: PMC10533022 DOI: 10.3390/ma16186184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Revised: 09/12/2023] [Accepted: 09/12/2023] [Indexed: 09/29/2023]
Abstract
The bipolar resistive switching properties of Pt/TaOx/InOx/ITO-resistive random-access memory devices under DC and pulse measurement conditions are explored in this work. Transmission electron microscopy and X-ray photoelectron spectroscopy were used to confirm the structure and chemical compositions of the devices. A unique two-step forming process referred to as the double-forming phenomenon and self-compliance characteristics are demonstrated under a DC sweep. A model based on oxygen vacancy migration is proposed to explain its conduction mechanism. Varying reset voltages and compliance currents were applied to evaluate multilevel cell characteristics. Furthermore, pulses were applied to the devices to demonstrate the neuromorphic system's application via testing potentiation, depression, spike-timing-dependent plasticity, and spike-rate-dependent plasticity.
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Affiliation(s)
| | | | | | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea; (D.J.); (S.K.); (S.L.)
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Wang Q, Zhao C, Sun Y, Xu R, Li C, Wang C, Liu W, Gu J, Shi Y, Yang L, Tu X, Gao H, Wen Z. Synaptic transistor with multiple biological functions based on metal-organic frameworks combined with the LIF model of a spiking neural network to recognize temporal information. MICROSYSTEMS & NANOENGINEERING 2023; 9:96. [PMID: 37484501 PMCID: PMC10362020 DOI: 10.1038/s41378-023-00566-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 05/11/2023] [Accepted: 06/14/2023] [Indexed: 07/25/2023]
Abstract
Spiking neural networks (SNNs) have immense potential due to their utilization of synaptic plasticity and ability to take advantage of temporal correlation and low power consumption. The leaky integration and firing (LIF) model and spike-timing-dependent plasticity (STDP) are the fundamental components of SNNs. Here, a neural device is first demonstrated by zeolitic imidazolate frameworks (ZIFs) as an essential part of the synaptic transistor to simulate SNNs. Significantly, three kinds of typical functions between neurons, the memory function achieved through the hippocampus, synaptic weight regulation and membrane potential triggered by ion migration, are effectively described through short-term memory/long-term memory (STM/LTM), long-term depression/long-term potentiation (LTD/LTP) and LIF, respectively. Furthermore, the update rule of iteration weight in the backpropagation based on the time interval between presynaptic and postsynaptic pulses is extracted and fitted from the STDP. In addition, the postsynaptic currents of the channel directly connect to the very large scale integration (VLSI) implementation of the LIF mode that can convert high-frequency information into spare pulses based on the threshold of membrane potential. The leaky integrator block, firing/detector block and frequency adaptation block instantaneously release the accumulated voltage to form pulses. Finally, we recode the steady-state visual evoked potentials (SSVEPs) belonging to the electroencephalogram (EEG) with filter characteristics of LIF. SNNs deeply fused by synaptic transistors are designed to recognize the 40 different frequencies of EEG and improve accuracy to 95.1%. This work represents an advanced contribution to brain-like chips and promotes the systematization and diversification of artificial intelligence.
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Affiliation(s)
- Qinan Wang
- School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, 215123 P.R. China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ UK
| | - Chun Zhao
- School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, 215123 P.R. China
| | - Yi Sun
- School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, 215123 P.R. China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ UK
| | - Rongxuan Xu
- School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, 215123 P.R. China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ UK
| | - Chenran Li
- School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, 215123 P.R. China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ UK
| | - Chengbo Wang
- School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, 215123 P.R. China
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ UK
| | - Wen Liu
- School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, 215123 P.R. China
| | - Jiangmin Gu
- School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, 215123 P.R. China
| | - Yingli Shi
- School of Advanced Technology, Xi’an Jiaotong-Liverpool University, Suzhou, 215123 P.R. China
| | - Li Yang
- School of Science, Xi’an Jiaotong-Liverpool University, Suzhou, 215123 P.R. China
| | - Xin Tu
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ UK
| | - Hao Gao
- Department of Electrical Engineering, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven, The Netherlands
| | - Zhen Wen
- Institute of Functional Nano and Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123 P.R. China
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6
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Wang R, Zhang W, Wang S, Zeng T, Ma X, Wang H, Hao Y. Memristor-Based Signal Processing for Compressed Sensing. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1354. [PMID: 37110939 PMCID: PMC10141131 DOI: 10.3390/nano13081354] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 04/04/2023] [Accepted: 04/05/2023] [Indexed: 06/19/2023]
Abstract
With the rapid progress of artificial intelligence, various perception networks were constructed to enable Internet of Things (IoT) applications, thereby imposing formidable challenges to communication bandwidth and information security. Memristors, which exhibit powerful analog computing capabilities, emerged as a promising solution expected to address these challenges by enabling the development of the next-generation high-speed digital compressed sensing (CS) technologies for edge computing. However, the mechanisms and fundamental properties of memristors for achieving CS remain unclear, and the underlying principles for selecting different implementation methods based on various application scenarios have yet to be elucidated. A comprehensive overview of memristor-based CS techniques is currently lacking. In this article, we systematically presented CS requirements on device performance and hardware implementation. The relevant models were analyzed and discussed from the mechanism level to elaborate the memristor CS system scientifically. In addition, the method of deploying CS hardware using the powerful signal processing capabilities and unique performance of memristors was further reviewed. Subsequently, the potential of memristors in all-in-one compression and encryption was anticipated. Finally, existing challenges and future outlooks for memristor-based CS systems were discussed.
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Affiliation(s)
- Rui Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Wanlin Zhang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Saisai Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Tonglong Zeng
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Xiaohua Ma
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Hong Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
| | - Yue Hao
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
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Lee E, Kim J, Park J, Hwang J, Jang H, Cho K, Choi W. Realizing Electronic Synapses by Defect Engineering in Polycrystalline Two-Dimensional MoS 2 for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15839-15847. [PMID: 36919898 DOI: 10.1021/acsami.2c21688] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Neuromorphic computing based on two-dimensional transition-metal dichalcogenides (2D TMDs) has attracted significant attention recently due to their extraordinary properties generated by the atomic-thick layered structure. This study presents sulfur-defect-assisted MoS2 artificial synaptic devices fabricated by a simple sputtering process, followed by a precise sulfur (S) vacancy-engineering process. While the as-sputtered MoS2 film does not show synaptic behavior, the S vacancy-controlled MoS2 film exhibits excellent synapse with remarkable nonvolatile memory characteristics such as a high switching ratio (∼103), a large memory window, and long retention time (∼104 s) in addition to synaptic functions such as paired-pulse facilitation (PPF) and long-term potentiation (LTP)/depression (LTD). The synaptic device working mechanism of Schottky barrier height modulation by redistributing S vacancies was systemically analyzed by electrical, physical, and microscopy characterizations. The presented MoS2 synaptic device, based on the precise defect engineering of sputtered MoS2, is a facile, low-cost, complementary metal-oxide semiconductor (CMOS)-compatible, and scalable method and provides a procedural guideline for the design of practical 2D TMD-based neuromorphic computing.
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Affiliation(s)
- Eunho Lee
- Department of Mechanical and Energy Engineering, University of North Texas, Denton, Texas 76203, United States
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea
| | - Junyoung Kim
- Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203, United States
| | - Juhong Park
- Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203, United States
| | - Jinwoo Hwang
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea
| | - Hyoik Jang
- Department of Chemical Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea
| | - Kilwon Cho
- Center for Advanced Soft Electronics, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Wonbong Choi
- Department of Mechanical and Energy Engineering, University of North Texas, Denton, Texas 76203, United States
- Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76203, United States
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8
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Zahoor F, Hussin FA, Isyaku UB, Gupta S, Khanday FA, Chattopadhyay A, Abbas H. Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing. DISCOVER NANO 2023; 18:36. [PMID: 37382679 PMCID: PMC10409712 DOI: 10.1186/s11671-023-03775-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2022] [Accepted: 01/17/2023] [Indexed: 06/30/2023]
Abstract
The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-intense applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. RRAM has grown in prominence in the recent years due to its simple structure, long retention, high operating speed, ultra-low-power operation capabilities, ability to scale to lower dimensions without affecting the device performance and the possibility of three-dimensional integration for high-density applications. Over the past few years, research has shown RRAM as one of the most suitable candidates for designing efficient, intelligent and secure computing system in the post-CMOS era. In this manuscript, the journey and the device engineering of RRAM with a special focus on the resistive switching mechanism are detailed. This review also focuses on the RRAM based on two-dimensional (2D) materials, as 2D materials offer unique electrical, chemical, mechanical and physical properties owing to their ultrathin, flexible and multilayer structure. Finally, the applications of RRAM in the field of neuromorphic computing are presented.
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Affiliation(s)
- Furqan Zahoor
- School of Computer Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Fawnizu Azmadi Hussin
- Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas, Seri Iskandar, Malaysia
| | - Usman Bature Isyaku
- Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas, Seri Iskandar, Malaysia
| | - Shagun Gupta
- School of Electronics and Communication Engineering, Shri Mata Vaishno Devi University, Katra, India
| | - Farooq Ahmad Khanday
- Department of Electronics & Instrumentation Technology, University of Kashmir, Srinagar, India
| | - Anupam Chattopadhyay
- School of Computer Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Haider Abbas
- Division of Material Science and Engineering, Hanyang University, Seoul, South Korea
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
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Shu F, Chen X, Yu Z, Gao P, Liu G. Metal-Organic Frameworks-Based Memristors: Materials, Devices, and Applications. MOLECULES (BASEL, SWITZERLAND) 2022; 27:molecules27248888. [PMID: 36558025 PMCID: PMC9788367 DOI: 10.3390/molecules27248888] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2022] [Revised: 12/09/2022] [Accepted: 12/11/2022] [Indexed: 12/23/2022]
Abstract
Facing the explosive growth of data, a number of new micro-nano devices with simple structure, low power consumption, and size scalability have emerged in recent years, such as neuromorphic computing based on memristor. The selection of resistive switching layer materials is extremely important for fabricating of high performance memristors. As an organic-inorganic hybrid material, metal-organic frameworks (MOFs) have the advantages of both inorganic and organic materials, which makes the memristors using it as a resistive switching layer show the characteristics of fast erasing speed, outstanding cycling stability, conspicuous mechanical flexibility, good biocompatibility, etc. Herein, the recent advances of MOFs-based memristors in materials, devices, and applications are summarized, especially the potential applications of MOFs-based memristors in data storage and neuromorphic computing. There also are discussions and analyses of the challenges of the current research to provide valuable insights for the development of MOFs-based memristors.
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Affiliation(s)
- Fan Shu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xinhui Chen
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- College of Information Engineering, Jinhua Polytechnic, Jinhua 321017, China
| | - Zhe Yu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- School of Materials, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (Z.Y.); (P.G.); (G.L.)
| | - Pingqi Gao
- School of Materials, Sun Yat-sen University, Guangzhou 510275, China
- Correspondence: (Z.Y.); (P.G.); (G.L.)
| | - Gang Liu
- Department of Micro/Nano Electronics, School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- Correspondence: (Z.Y.); (P.G.); (G.L.)
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10
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Zrinski I, Zavašnik J, Duchoslav J, Hassel AW, Mardare AI. Threshold Switching in Forming-Free Anodic Memristors Grown on Hf-Nb Combinatorial Thin-Film Alloys. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3944. [PMID: 36432230 PMCID: PMC9697845 DOI: 10.3390/nano12223944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/22/2022] [Revised: 11/03/2022] [Accepted: 11/05/2022] [Indexed: 06/16/2023]
Abstract
The development of novel materials with coexisting volatile threshold and non-volatile memristive switching is crucial for neuromorphic applications. Hence, the aim of this work was to investigate the memristive properties of oxides in a Hf-Nb thin-film combinatorial system deposited by sputtering on Si substrates. The active layer was grown anodically on each Hf-Nb alloy from the library, whereas Pt electrodes were deposited as the top electrodes. The devices grown on Hf-45 at.% Nb alloys showed improved memristive performances reaching resistive state ratios up to a few orders of magnitude and achieving multi-level switching behavior while consuming low power in comparison with memristors grown on pure metals. The coexistence of threshold and resistive switching is dependent upon the current compliance regime applied during memristive studies. Such behaviors were explained by the structure of the mixed oxides investigated by TEM and XPS. The mixed oxides, with HfO2 crystallites embedded in quasi amorphous and stoichiometrically non-uniform Nb oxide regions, were found to be favorable for the formation of conductive filaments as a necessary step toward memristive behavior. Finally, metal-insulator-metal structures grown on the respective alloys can be considered as relevant candidates for the future fabrication of anodic high-density in-memory computing systems for neuromorphic applications.
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Affiliation(s)
- Ivana Zrinski
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Street, 69, 4040 Linz, Austria
| | - Janez Zavašnik
- Jožef Stefan Institute, Jamova Cesta 39, 1000 Ljubljana, Slovenia
| | - Jiri Duchoslav
- Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Street, 69, 4040 Linz, Austria
| | - Achim Walter Hassel
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Street, 69, 4040 Linz, Austria
- Danube Private University, Steiner Landstrasse 124, 3500 Krems-Stein, Austria
| | - Andrei Ionut Mardare
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Street, 69, 4040 Linz, Austria
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11
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Yoon C, Oh G, Park BH. Ion-Movement-Based Synaptic Device for Brain-Inspired Computing. NANOMATERIALS 2022; 12:nano12101728. [PMID: 35630952 PMCID: PMC9148095 DOI: 10.3390/nano12101728] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2022] [Revised: 05/13/2022] [Accepted: 05/16/2022] [Indexed: 02/04/2023]
Abstract
As the amount of data has grown exponentially with the advent of artificial intelligence and the Internet of Things, computing systems with high energy efficiency, high scalability, and high processing speed are urgently required. Unlike traditional digital computing, which suffers from the von Neumann bottleneck, brain-inspired computing can provide efficient, parallel, and low-power computation based on analog changes in synaptic connections between neurons. Synapse nodes in brain-inspired computing have been typically implemented with dozens of silicon transistors, which is an energy-intensive and non-scalable approach. Ion-movement-based synaptic devices for brain-inspired computing have attracted increasing attention for mimicking the performance of the biological synapse in the human brain due to their low area and low energy costs. This paper discusses the recent development of ion-movement-based synaptic devices for hardware implementation of brain-inspired computing and their principles of operation. From the perspective of the device-level requirements for brain-inspired computing, we address the advantages, challenges, and future prospects associated with different types of ion-movement-based synaptic devices.
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12
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Choi S, Jang J, Kim MS, Kim ND, Kwag J, Wang G. Flexible Neural Network Realized by the Probabilistic SiO x Memristive Synaptic Array for Energy-Efficient Image Learning. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104773. [PMID: 35170246 PMCID: PMC9009121 DOI: 10.1002/advs.202104773] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2021] [Revised: 12/31/2021] [Indexed: 06/14/2023]
Abstract
The human brain's neural networks are sparsely connected via tunable and probabilistic synapses, which may be essential for performing energy-efficient cognitive and intellectual functions. In this sense, the implementation of a flexible neural network with probabilistic synapses is a first step toward realizing the ultimate energy-efficient computing framework. Here, inspired by the efficient threshold-tunable and probabilistic rod-to-rod bipolar synapses in the human visual system, a 16 × 16 crossbar array comprising the vertical form of gate-tunable probabilistic SiOx memristive synaptic barristor utilizing the Si/graphene heterojunction is designed and fabricated. Controllable stochastic switching dynamics in this array are achieved via various input voltage pulse schemes. In particular, the threshold tunability via electrostatic gating enables the efficient in situ alteration of the probabilistic switching activation (PAct ) from 0 to 1.0, and can even modulate the degree of the PAct change. A drop-connected algorithm based on the PAct is constructed and used to successfully classify the shapes of several fashion items. The suggested approach can decrease the learning energy by up to ≈2,116 times relative to that of the conventional all-to-all connected network while exhibiting a high recognition accuracy of ≈93 %.
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Affiliation(s)
- Sanghyeon Choi
- KU‐KIST Graduate School of Converging Science and TechnologyKorea University145 Anam‐ro, Seongbuk‐guSeoul02841Republic of Korea
| | - Jingon Jang
- KU‐KIST Graduate School of Converging Science and TechnologyKorea University145 Anam‐ro, Seongbuk‐guSeoul02841Republic of Korea
| | - Min Seob Kim
- Institute of Advanced Composite MaterialsKorea Institute of Science and Technology92 Chudong‐ro, Bongdong‐eupWanju‐gunJeollabuk‐do55324Republic of Korea
| | - Nam Dong Kim
- Institute of Advanced Composite MaterialsKorea Institute of Science and Technology92 Chudong‐ro, Bongdong‐eupWanju‐gunJeollabuk‐do55324Republic of Korea
| | - Jeehyun Kwag
- Department of Brain and Cognitive EngineeringKorea UniversitySeoul02841Republic of Korea
| | - Gunuk Wang
- KU‐KIST Graduate School of Converging Science and TechnologyKorea University145 Anam‐ro, Seongbuk‐guSeoul02841Republic of Korea
- Department of Integrative Energy EngineeringKorea University145 Anam‐ro, Seongbuk‐guSeoul02841Republic of Korea
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Kumar M, Seo H. High-Performing Self-Powered Photosensing and Reconfigurable Pyro-photoelectric Memory with Ferroelectric Hafnium Oxide. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106881. [PMID: 34725878 DOI: 10.1002/adma.202106881] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/01/2021] [Indexed: 06/13/2023]
Abstract
With highly diverse multifunctional properties, hafnium oxide (HfO2 ) has attracted considerable attention not only because of its potential to address fundamental questions about material behaviors, but also its potential for applied perspectives like ferroelectric memory, transistors, and pyroelectric sensors. However, effective harvesting of the pyro-photoelectric effect of HfO2 to develop high-performing self-biased photosensors and electric writable and optical readable memory has yet to be developed. Here, a proof-of-concept HfO2 -based self-powered and ultrafast (response time ≈ 60 µs) infrared pyroelectric sensor with a responsivity of up to 68 µA W-1 is developed. In particular, temporal infrared light illumination induced surface heating and, in turn, change in spontaneous polarization are attributed to robust pyro-photocurrent generation. Further, controllable suspension and reestablishment of the self-biased pyro-photocurrent response with a short electric pulse are demonstrated, which offers a conceptually new kind of photoreadable memory. Potentially, the novel approach opens a new avenue for designing on-demand pyro-phototronic response over a desired area and offers the opportunity to utilize it for various applications, including memory storage, neuromorphic vision sensors, classification, and emergency alert systems.
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Affiliation(s)
- Mohit Kumar
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Hyungtak Seo
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
- Department of Materials Science and Engineering, Ajou University, Suwon, 16499, Republic of Korea
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14
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Li L, Dai T, Liu K, Chang KC, Zhang R, Lin X, Liu HJ, Lai YC, Kuo TP. Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation. NANOSCALE 2021; 13:14035-14040. [PMID: 34477684 DOI: 10.1039/d1nr03356e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Complementary resistive switching (CRS) is a core requirement in memristor crossbar array construction for neuromorphic computing in view of its capability to avoid the sneak path current. However, previous approaches for implementing CRS are generally based on a complex device structure design and fabrication process or a meticulous current-limiting measurement procedure. In this study, a supercritical fluid-assisted ammoniation (SFA) process is reported to achieve CRS in a single device by endowing the original ordinary switching materials with dual-ion operation. In addition to self-compliant CRS behavior, a multi-bit storage function has also been achieved through the SFA process accompanied by superior retention and reliability. These substantial evolved resistive phenomena are elucidated attentively by our chemical reaction model and physical mechanism model corroborated by the material analysis and current conduction fitting analysis results. The findings in this research present the most efficient way to achieve CRS through only one chemical procedure with significantly improved device performance. Moreover, the supercritical fluid approach envisions tremendous possibilities for further development of materials and electric devices by a low-temperature process, with semiconductor fabrication compatibility and environmental friendliness.
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Affiliation(s)
- Lei Li
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055, China.
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15
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Oh S, Shi Y, Del Valle J, Salev P, Lu Y, Huang Z, Kalcheim Y, Schuller IK, Kuzum D. Energy-efficient Mott activation neuron for full-hardware implementation of neural networks. NATURE NANOTECHNOLOGY 2021; 16:680-687. [PMID: 33737724 PMCID: PMC8627686 DOI: 10.1038/s41565-021-00874-8] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2020] [Accepted: 02/02/2021] [Indexed: 05/09/2023]
Abstract
To circumvent the von Neumann bottleneck, substantial progress has been made towards in-memory computing with synaptic devices. However, compact nanodevices implementing non-linear activation functions are required for efficient full-hardware implementation of deep neural networks. Here, we present an energy-efficient and compact Mott activation neuron based on vanadium dioxide and its successful integration with a conductive bridge random access memory (CBRAM) crossbar array in hardware. The Mott activation neuron implements the rectified linear unit function in the analogue domain. The neuron devices consume substantially less energy and occupy two orders of magnitude smaller area than those of analogue complementary metal-oxide semiconductor implementations. The LeNet-5 network with Mott activation neurons achieves 98.38% accuracy on the MNIST dataset, close to the ideal software accuracy. We perform large-scale image edge detection using the Mott activation neurons integrated with a CBRAM crossbar array. Our findings provide a solution towards large-scale, highly parallel and energy-efficient in-memory computing systems for neural networks.
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Affiliation(s)
- Sangheon Oh
- Electrical and Computer Engineering Department, University of California San Diego, La Jolla, CA, USA
| | - Yuhan Shi
- Electrical and Computer Engineering Department, University of California San Diego, La Jolla, CA, USA
| | - Javier Del Valle
- Department of Physics, University of California San Diego, La Jolla, CA, USA
| | - Pavel Salev
- Department of Physics, University of California San Diego, La Jolla, CA, USA
| | - Yichen Lu
- Electrical and Computer Engineering Department, University of California San Diego, La Jolla, CA, USA
| | - Zhisheng Huang
- Electrical and Computer Engineering Department, University of California San Diego, La Jolla, CA, USA
| | - Yoav Kalcheim
- Department of Physics, University of California San Diego, La Jolla, CA, USA
| | - Ivan K Schuller
- Department of Physics, University of California San Diego, La Jolla, CA, USA
| | - Duygu Kuzum
- Electrical and Computer Engineering Department, University of California San Diego, La Jolla, CA, USA.
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16
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Xue F, He X, Wang Z, Retamal JRD, Chai Z, Jing L, Zhang C, Fang H, Chai Y, Jiang T, Zhang W, Alshareef HN, Ji Z, Li LJ, He JH, Zhang X. Giant Ferroelectric Resistance Switching Controlled by a Modulatory Terminal for Low-Power Neuromorphic In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008709. [PMID: 33860581 DOI: 10.1002/adma.202008709] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2020] [Revised: 02/15/2021] [Indexed: 06/12/2023]
Abstract
Ferroelectrics have been demonstrated as excellent building blocks for high-performance nonvolatile memories, including memristors, which play critical roles in the hardware implementation of artificial synapses and in-memory computing. Here, it is reported that the emerging van der Waals ferroelectric α-In2 Se3 can be used to successfully implement heterosynaptic plasticity (a fundamental but rarely emulated synaptic form) and achieve a resistance-switching ratio of heterosynaptic memristors above 103 , which is two orders of magnitude larger than that in other similar devices. The polarization change of ferroelectric α-In2 Se3 channel is responsible for the resistance switching at various paired terminals. The third terminal of α-In2 Se3 memristors exhibits nonvolatile control over channel current at a picoampere level, endowing the devices with picojoule read-energy consumption to emulate the associative heterosynaptic learning. The simulation proves that both supervised and unsupervised learning manners can be implemented in α-In2 Se3 neutral networks with high image recognition accuracy. Moreover, these heterosynaptic devices can naturally realize Boolean logic without an additional circuit component. The results suggest that van der Waals ferroelectrics hold great potential for applications in complex, energy-efficient, brain-inspired computing systems and logic-in-memory computers.
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Affiliation(s)
- Fei Xue
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xin He
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Zhenyu Wang
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - José Ramón Durán Retamal
- Computer, Electrical, and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Zheng Chai
- Department of Electronics and Electrical Engineering, Liverpool John Moores University, Liverpool, L3 3AF, UK
| | - Lingling Jing
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Chenhui Zhang
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Hui Fang
- Computer Science Department, Loughborough University, Loughborough, LE11 3TU, UK
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Tao Jiang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
| | - Weidong Zhang
- Department of Electronics and Electrical Engineering, Liverpool John Moores University, Liverpool, L3 3AF, UK
| | - Husam N Alshareef
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Zhigang Ji
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Lain-Jong Li
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- Department of Materials Science and Engineering, University of New South Wales, Kensington, NSW, 2052, Australia
| | - Jr-Hau He
- Computer, Electrical, and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xixiang Zhang
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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Zhao Y, Chen R, Huang P, Kang J. Modeling-Based Design of Memristive Devices for Brain-Inspired Computing. FRONTIERS IN NANOTECHNOLOGY 2021. [DOI: 10.3389/fnano.2021.654418] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
Resistive switching random access memory (RRAM) has emerged for non-volatile memory application with the features of simple structure, low cost, high density, high speed, low power, and CMOS compatibility. In recent years, RRAM technology has made significant progress in brain-inspired computing paradigms by exploiting its unique physical characteristics, which attempts to eliminate the energy-intensive and time-consuming data transfer between the processing unit and the memory unit. The design of RRAM-based computing paradigms, however, requires a detailed description of the dominant physical effects correlated with the resistive switching processes to realize the interaction and optimization between devices and algorithms or architectures. This work provides an overview of the current progress on device-level resistive switching behaviors with detailed insights into the physical effects in the resistive switching layer and the multifunctional assistant layer. Then the circuit-level physics-based compact models will be reviewed in terms of typical binary RRAM and the emerging analog synaptic RRAM, which act as an interface between the device and circuit design. After that, the interaction between device and system performances will finally be addressed by reviewing the specific applications of brain-inspired computing systems including neuromorphic computing, in-memory logic, and stochastic computing.
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18
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Liang A, Zhang J, Wang F, Jiang Y, Hu K, Shan X, Liu Q, Song Z, Zhang K. Transparent HfO x -based memristor with robust flexibility and synapse characteristics by interfacial control of oxygen vacancies movement. NANOTECHNOLOGY 2021; 32:145202. [PMID: 33321481 DOI: 10.1088/1361-6528/abd3c7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Hafnium oxides (HfO x ) based flexible memristors were fabricated on polyethylene naphtholate (PEN) substrates to simulate a variety of bio-synapse functions. By optimizing the manufacturing conditions of electrode and active films, it is proved that the TiN/HfO x /W/ITO/PEN bilayer device has robust flexibility and can still be modulated after 2000 times of bending. The memristor device exhibits better symmetrical and linear characteristics with excellent uniformity at lower programming power consumption (∼38 μW). In addition, the essential synaptic behaviors have further been achieved in the devices, including the transition from short-term plasticity to long-term plasticity and spike time-dependent plasticity. Through the analysis of I-V curves and XPS data, a switching mechanism based on HfO x /W interface boundary drift is constructed. It is revealed that the redox reaction caused by W intercalation can effectively regulate the content of oxygen vacancy in HfO x . At the same time, bias-induced interfacial reactions will regulate the movement of oxygen vacancies, which emulates bio-synapse functions and improves the electrical properties of the device.
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Affiliation(s)
- Ange Liang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
| | - Jingwei Zhang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
| | - Fang Wang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
| | - Yutong Jiang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
| | - Kai Hu
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
| | - Xin Shan
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
| | - Qi Liu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics Chinese Academy of Sciences, Beijing 100029, People's Republic of China
| | - Zhitang Song
- StateKey Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People's Republic of China
| | - Kailiang Zhang
- Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronical and Engineering, Tianjin University of Technology, No.391, West Binshui Road, Xiqing District, Tianjin 300384, People's Republic of China
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19
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Bindal N, Ian CAC, Lew WS, Kaushik BK. Antiferromagnetic skyrmion repulsion based artificial neuron device. NANOTECHNOLOGY 2021; 32:215204. [PMID: 33530074 DOI: 10.1088/1361-6528/abe261] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2020] [Accepted: 02/02/2021] [Indexed: 06/12/2023]
Abstract
Magnetic skyrmions are potential candidates for neuromorphic computing due to their inherent topologically stable particle-like behavior, low driving current density, and nanoscale size. Antiferromagnetic skyrmions are favored as they can be driven parallel to in-plane electrical currents as opposed to ferromagnetic skyrmions which exhibit the skyrmion Hall effect and eventually cause their annihilation at the edge of nanotracks. In this paper, an antiferromagnetic skyrmion based artificial neuron device consisting of a magnetic anisotropy barrier on a nanotrack is proposed. It exploits inter-skyrmion repulsion, mimicking the integrate-fire (IF) functionality of a biological neuron. The device threshold represented by the maximum number of skyrmions that can be pinned by the barrier can be tuned based on the particular current density employed on the nanotrack. The corresponding neuron spiking event occurs when a skyrmion overcomes the barrier. By raising the device threshold, lowering the barrier width and height, the operating current density of the device can be decreased to further enhance its energy efficiency. The proposed device paves the way for developing energy-efficient neuromorphic computing in antiferromagnetic spintronics.
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Affiliation(s)
- Namita Bindal
- Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, 247667, India
| | - Calvin Ang Chin Ian
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Wen Siang Lew
- School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore
| | - Brajesh Kumar Kaushik
- Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, 247667, India
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20
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Yu H, Wei H, Gong J, Han H, Ma M, Wang Y, Xu W. Evolution of Bio-Inspired Artificial Synapses: Materials, Structures, and Mechanisms. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2000041. [PMID: 32452636 DOI: 10.1002/smll.202000041] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2020] [Revised: 04/19/2020] [Indexed: 05/08/2023]
Abstract
Artificial synapses (ASs) are electronic devices emulating important functions of biological synapses, which are essential building blocks of artificial neuromorphic networks for brain-inspired computing. A human brain consists of several quadrillion synapses for information storage and processing, and massively parallel computation. Neuromorphic systems require ASs to mimic biological synaptic functions, such as paired-pulse facilitation, short-term potentiation, long-term potentiation, spatiotemporally-correlated signal processing, and spike-timing-dependent plasticity, etc. Feature size and energy consumption of ASs need to be minimized for high-density energy-efficient integration. This work reviews recent progress on ASs. First, synaptic plasticity and functional emulation are introduced, and then synaptic electronic devices for neuromorphic computing systems are discussed. Recent advances in flexible artificial synapses for artificial sensory nerves are also briefly introduced. Finally, challenges and opportunities in the field are discussed.
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Affiliation(s)
- Haiyang Yu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Huanhuan Wei
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Jiangdong Gong
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Hong Han
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Mingxue Ma
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Yongfei Wang
- School of Materials and Metallurgy, University of Science and Technology Liaoning, Anshan, Liaoning, 114051, China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, P. R. China
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Fu Y, Dong B, Su WC, Lin CY, Zhou KJ, Chang TC, Zhuge F, Li Y, He Y, Gao B, Miao XS. Enhancing LiAlO X synaptic performance by reducing the Schottky barrier height for deep neural network applications. NANOSCALE 2020; 12:22970-22977. [PMID: 33034326 DOI: 10.1039/d0nr04782a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Although good performance has been reported in shallow neural networks, the application of memristor synapses towards realistic deep neural networks has met more stringent requirements on the synapse properties, particularly the high precision and linearity of the synaptic analog weight tuning. In this study, a LiAlOX memristor synapse was fabricated and optimized to address these demands. By delicately tuning the initial conductance states, 120-level continuously adjustable conductance states were obtained and the nonlinearity factor was substantially reduced from 8.96 to 0.83. The significant enhancements were attributed to the reduced Schottky barrier height (SBH) between the filament tip and the electrode, which was estimated from the measured I-V curves. Furthermore, a deep neural network for realistic action recognition task was constructed, and the recognition accuracy was found to be increased from 15.1% to 91.4% on the Weizmann video dataset by adopting the above-described device optimization method.
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Affiliation(s)
- Yaoyao Fu
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
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22
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Liu Y, Ye C, Chang KC, Li L, Jiang B, Xia C, Liu L, Zhang X, Liu X, Xia T, Peng Z, Cao G, Cheng G, Ke S, Wang J. A Robust and Low-Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2004619. [PMID: 33053256 DOI: 10.1002/smll.202004619] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2020] [Revised: 08/17/2020] [Indexed: 06/11/2023]
Abstract
Memristor, processing data storage and logic operation all-in-one, is an advanced configuration for next generation computer. In this work, a bismuth doped tin oxide (Bi:SnO2 ) memristor with ITO/Bi:SnO2 /TiN structure has been fabricated. Observing from transmission electron microscope (TEM) for the Bi:SnO2 device, it is found that the bismuth atoms surround the surface of SnO2 crystals to form the coaxial Bi conductive filament. The self-compliance current, switching voltage and operating current of Bi:SnO2 memristor are remarkably smaller than that of ITO/SnO2 /TiN device. With the content of 4.8% Bi doping, the SET operating power of doped device is 16 µW for ITO/Bi:SnO2 /TiN memory cell of 0.4 × 0.4 µm2 , which is cut down by two orders of magnitude. Hence, the findings in this study suggest that Bi:SnO2 memristors hold significant potential for application in low power memory and broadening the understanding of existing resistive switching (RS) mechanism.
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Affiliation(s)
- Yanxin Liu
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China
| | - Cong Ye
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China
| | - Kuan-Chang Chang
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055, P. R. China
| | - Lei Li
- School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055, P. R. China
| | - Bei Jiang
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China
| | - Chen Xia
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China
| | - Lei Liu
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China
| | - Xin Zhang
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China
| | - Xinyi Liu
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China
| | - Tian Xia
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China
| | - Zehui Peng
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China
| | - Guangsen Cao
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China
| | - Gong Cheng
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China
| | - Shanwu Ke
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China
| | - Jiahong Wang
- Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
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Han JS, Le QV, Kim H, Lee YJ, Lee DE, Im IH, Lee MK, Kim SJ, Kim J, Kwak KJ, Choi MJ, Lee SA, Hong K, Kim SY, Jang HW. Lead-Free Dual-Phase Halide Perovskites for Preconditioned Conducting-Bridge Memory. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2003225. [PMID: 32945139 DOI: 10.1002/smll.202003225] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2020] [Revised: 07/22/2020] [Indexed: 06/11/2023]
Abstract
Organometallic and all-inorganic halide perovskites (HPs) have recently emerged as promising candidate materials for resistive switching (RS) nonvolatile memory due to their current-voltage hysteresis caused by fast ion migration. Lead-free and all-inorganic HPs have been researched for non-toxic and environmentally friendly RS memory devices. However, only HP-based devices with electrochemically active top electrode (TE) exhibit ultra-low operating voltages and high on/off ratio RS properties. The active TE easily reacts to halide ions in HP films, and the devices have a low device durability. Herein, RS memory devices based on an air-stable lead-free all-inorganic dual-phase HP (AgBi2 I7 -Cs3 Bi2 I9 ) are successfully fabricated with inert metal electrodes. The devices with Au TE show filamentary RS behavior by conducting-bridge involving Ag cations in HPs with ultra-low operating voltages (<0.15 V), high on/off ratio (>107 ), multilevel data storage, and long retention times (>5 × 104 s). The use of a closed-loop pulse switching method improves reversible RS properties up to 103 cycles with high on/off ratio above 106 . With an extremely small bending radius of 1 mm, the devices are operable with reasonable RS characteristics. This work provides a promising material strategy for lead-free all-inorganic HP-based nonvolatile memory devices for practical applications.
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Affiliation(s)
- Ji Su Han
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Quyet Van Le
- Institute of Research and Development, Duy Tan University, Da Nang, 550000, Vietnam
| | - Hyojung Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Yoon Jung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Da Eun Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - In Hyuk Im
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Min Kyung Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seung Ju Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jaehyun Kim
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kyung Ju Kwak
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Min-Ju Choi
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sol A Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Kootak Hong
- Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Soo Young Kim
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
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24
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Lu Q, Sun F, Liu L, Li L, Wang Y, Hao M, Wang Z, Wang S, Zhang T. Biological receptor-inspired flexible artificial synapse based on ionic dynamics. MICROSYSTEMS & NANOENGINEERING 2020; 6:84. [PMID: 34567694 PMCID: PMC8433456 DOI: 10.1038/s41378-020-00189-z] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2020] [Accepted: 06/11/2020] [Indexed: 05/06/2023]
Abstract
The memristor has been regarded as a promising candidate for constructing a neuromorphic computing platform that is capable of confronting the bottleneck of the traditional von Neumann architecture. Here, inspired by the working mechanism of the G-protein-linked receptor of biological cells, a novel double-layer memristive device with reduced graphene oxide (rGO) nanosheets covered by chitosan (an ionic conductive polymer) as the channel material is constructed. The protons in chitosan and the functional groups in rGO nanosheets imitate the functions of the ligands and receptors of biological cells, respectively. Smooth changes in the response current depending on the historical applied voltages are observed, offering a promising pathway toward biorealistic synaptic emulation. The memristive behavior is mainly a result of the interaction between protons provided by chitosan and the defects and functional groups in the rGO nanosheets. The channel current is due to the hopping of protons through functional groups and is limited by the traps in the rGO nanosheets. The transition from short-term to long-term potentiation is achieved, and learning-forgetting behaviors of the memristor mimicking those of the human brain are demonstrated. Overall, the bioinspired memristor-type artificial synaptic device shows great potential in neuromorphic networks.
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Affiliation(s)
- Qifeng Lu
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), 398 Ruoshui Road, 215123 Suzhou, PR China
| | - Fuqin Sun
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), 398 Ruoshui Road, 215123 Suzhou, PR China
| | - Lin Liu
- Department of Health and Environmental Sciences, Xi’an Jiaotong Liverpool University, 111 Ren’ai Road, 215123 Suzhou, PR China
| | - Lianhui Li
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), 398 Ruoshui Road, 215123 Suzhou, PR China
| | - Yingyi Wang
- Department of Health and Environmental Sciences, Xi’an Jiaotong Liverpool University, 111 Ren’ai Road, 215123 Suzhou, PR China
| | - Mingming Hao
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), 398 Ruoshui Road, 215123 Suzhou, PR China
| | - Zihao Wang
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), 398 Ruoshui Road, 215123 Suzhou, PR China
| | - Shuqi Wang
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), 398 Ruoshui Road, 215123 Suzhou, PR China
| | - Ting Zhang
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), 398 Ruoshui Road, 215123 Suzhou, PR China
- Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, 200031 Shanghai, PR China
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25
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Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure. COATINGS 2020. [DOI: 10.3390/coatings10080765] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
In this work, we present the nonlinear current–voltage (I–V) characteristics of a complementary resistive switching (CRS)-like curve from a HfAlOx-based memristor, used to implement a high-density cross-point array. A Pt/HfAlOx/TiN device has lower on-current and larger selectivity compared to Pt/HfO2/TiN or Pt/Al2O3/TiN devices. It has been shown that the on-current and first reset peak current after the forming process are crucial in obtaining a CRS-like curve. We demonstrate transient CRS-like characteristics with high nonlinearity under pulse response for practical applications. Finally, after finding the optimal conditions for high selectivity, the calculated read margin proves that a Pt/HfAlOx/TiN device with a CRS-like curve is most suitable for use in a high-density cross-point array. Our results suggest that the built-in selector properties in a Pt/HfAlOx/TiN single layer device offer considerable potential in terms of the simplicity of the processes involved in the cross-point structure.
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26
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Li L, Chang KC, Lin X, Lai YC, Zhang R, Kuo TP. Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process. NANOSCALE 2020; 12:15721-15724. [PMID: 32677652 DOI: 10.1039/d0nr04053c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
This study investigates the physical and chemical mechanisms during the resistive switching process by means of obtaining the activation energy in the reaction procedure. From the electrochemical and electrical measurement analysis results of HfO2-based resistive random access memory (RRAM), it can be observed that the chemical reaction during the reset process is consistent with the first-order reaction law. The activation energy, Ea, is determined from the reaction rate constant k under a varying-temperature environment in the reset process. The whole reset chemical reaction process can be divided into five phases involving N-O bond breaking, O-O bond breaking and triple-step oxygen ion migration. The methodology of the activation energy determination carried out in this study showcases a distinct approach to elucidate the resistive switching mechanism of RRAM and offers insight into RRAM design for future potential application.
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Affiliation(s)
- Lei Li
- School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China. and Department of Materials Science and Engineering, Research Center for Sustainable Energy and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan
| | - Kuan-Chang Chang
- School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China.
| | - Xinnan Lin
- School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China.
| | - Ying-Chih Lai
- Department of Materials Science and Engineering, Research Center for Sustainable Energy and Nanotechnology, National Chung Hsing University, Taichung 40227, Taiwan
| | - Rui Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China.
| | - Tze-Peng Kuo
- Department of Physics, National Sun Yat-sen University, Kaohsiung 804, Taiwan and Institute of Materials and Optoelectronics, National Sun Yat-sen University, Kaohsiung 804, Taiwan
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27
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Liu D, Shi Q, Dai S, Huang J. The Design of 3D-Interface Architecture in an Ultralow-Power, Electrospun Single-Fiber Synaptic Transistor for Neuromorphic Computing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1907472. [PMID: 32068955 DOI: 10.1002/smll.201907472] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2019] [Revised: 01/18/2020] [Indexed: 06/10/2023]
Abstract
Synaptic electronics is a new technology for developing functional electronic devices that can mimic the structure and functions of biological counterparts. It has broad application prospects in wearable computing chips, human-machine interfaces, and neuron prostheses. These types of applications require synaptic devices with ultralow energy consumption as the effective energy supply for wearable electronics, which is still very difficult. Here, artificial synapse emulation is demonstrated by solid-ion gated organic field-effect transistors (OFETs) with a 3D-interface conducting channel for ultralow-power synaptic simulation. The basic features of the artificial synapse, excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and high-pass filtering, are successfully realized. Furthermore, the single-fiber based artificial synapse can be operated by an ultralow presynaptic spike down to -0.5 mV with an ultralow reading voltage at -0.1 mV due to the large contact surface between the ionic electrolyte and fiber-like semiconducting channel. Therefore, the ultralow energy consumption at one spike of the artificial synapse can be realized as low as ≈3.9 fJ, which provides great potential in a low-power integrated synaptic circuit.
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Affiliation(s)
- Dapeng Liu
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Qianqian Shi
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 201210, P. R. China
| | - Shilei Dai
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
| | - Jia Huang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai, 201804, P. R. China
- Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai, 201210, P. R. China
- Putuo District People's Hospital, Tongji University, Shanghai, 200060, P. R. China
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28
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Li L, Chang KC, Ye C, Lin X, Zhang R, Xu Z, Zhou Y, Xiong W, Kuo TP. An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode. NANOSCALE 2020; 12:3267-3272. [PMID: 31971203 DOI: 10.1039/c9nr08943h] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Emerging resistive random access memory has attracted extensive research enthusiasm. In this study, an indirect way to improve resistive random access memory (RRAM) comprehensive performance through electrode material re-design without intensive switching layer engineering is presented by adopting a hafnium-indium-tin-oxide composite. Working parameters of the device can be effectively improved: not only are low operation power consumption and high working stability achieved, but the memory window is significantly enlarged, accompanied by an automatic self-current-compliance function. The correlation between hafnium incorporation and performance improvements and the corresponding current conduction mechanisms have been thoroughly investigated to clarify the resistive switching behavior and to explain the oxygen absorption buffer effect. The hafnium atom, with large atomic radius, is surrounded by soft electron clouds and has high chemical activity to attract oxygen ions. It facilitates the accumulation of more oxygen ions around the interface of the top electrode and the resistive switching layer, leading to lower current and Schottky conduction. This study presents an important strategy for designing and developing electrode materials to improve the characteristics of RRAM and offers an indirect method to modify device working behaviors, also unveiling a promising prospect for its potential future application in low-power information storage and calculation technology.
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Affiliation(s)
- Lei Li
- School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China.
| | - Kuan-Chang Chang
- School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China.
| | - Cong Ye
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Hubei Key Laboratory of Applied Mathematics, Wuhan 430062, China
| | - Xinnan Lin
- School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China.
| | - Rui Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen Graduate School, Shenzhen 518055, China.
| | - Zhong Xu
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Hubei Key Laboratory of Applied Mathematics, Wuhan 430062, China
| | - Yi Zhou
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Hubei Key Laboratory of Applied Mathematics, Wuhan 430062, China
| | - Wen Xiong
- Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Hubei Key Laboratory of Applied Mathematics, Wuhan 430062, China
| | - Tzu-Peng Kuo
- Department of Physics, National Sun Yat-sen University, Kaohsiung 804, Taiwan and Institute of Materials and Optoelectronics, National Sun Yat-sen University, Kaohsiung 804, Taiwan
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29
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Tang J, Yuan F, Shen X, Wang Z, Rao M, He Y, Sun Y, Li X, Zhang W, Li Y, Gao B, Qian H, Bi G, Song S, Yang JJ, Wu H. Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902761. [PMID: 31550405 DOI: 10.1002/adma.201902761] [Citation(s) in RCA: 163] [Impact Index Per Article: 32.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2019] [Revised: 08/16/2019] [Indexed: 05/08/2023]
Abstract
As the research on artificial intelligence booms, there is broad interest in brain-inspired computing using novel neuromorphic devices. The potential of various emerging materials and devices for neuromorphic computing has attracted extensive research efforts, leading to a large number of publications. Going forward, in order to better emulate the brain's functions, its relevant fundamentals, working mechanisms, and resultant behaviors need to be re-visited, better understood, and connected to electronics. A systematic overview of biological and artificial neural systems is given, along with their related critical mechanisms. Recent progress in neuromorphic devices is reviewed and, more importantly, the existing challenges are highlighted to hopefully shed light on future research directions.
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Affiliation(s)
- Jianshi Tang
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Fang Yuan
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
| | - Xinke Shen
- Tsinghua Laboratory of Brain and Intelligence and Department of Biomedical Engineering, School of Medicine, Tsinghua University, Beijing, 100084, China
| | - Zhongrui Wang
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Mingyi Rao
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Yuanyuan He
- Tsinghua Laboratory of Brain and Intelligence and Department of Biomedical Engineering, School of Medicine, Tsinghua University, Beijing, 100084, China
| | - Yuhao Sun
- Tsinghua Laboratory of Brain and Intelligence and Department of Biomedical Engineering, School of Medicine, Tsinghua University, Beijing, 100084, China
| | - Xinyi Li
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Wenbin Zhang
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
| | - Yijun Li
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
| | - Bin Gao
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - He Qian
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Guoqiang Bi
- School of Life Sciences, University of Science and Technology of China, Hefei, 230027, China
| | - Sen Song
- Tsinghua Laboratory of Brain and Intelligence and Department of Biomedical Engineering, School of Medicine, Tsinghua University, Beijing, 100084, China
| | - J Joshua Yang
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Huaqiang Wu
- Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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30
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Three-Dimensional (3D) Vertical Resistive Random-Access Memory (VRRAM) Synapses for Neural Network Systems. MATERIALS 2019; 12:ma12203451. [PMID: 31652510 PMCID: PMC6829311 DOI: 10.3390/ma12203451] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/11/2019] [Revised: 10/16/2019] [Accepted: 10/18/2019] [Indexed: 12/03/2022]
Abstract
Memristor devices are generally suitable for incorporation in neuromorphic systems as synapses because they can be integrated into crossbar array circuits with high area efficiency. In the case of a two-dimensional (2D) crossbar array, however, the size of the array is proportional to the neural network’s depth and the number of its input and output nodes. This means that a 2D crossbar array is not suitable for a deep neural network. On the other hand, synapses that use a memristor with a 3D structure are suitable for implementing a neuromorphic chip for a multi-layered neural network. In this study, we propose a new optimization method for machine learning weight changes that considers the structural characteristics of a 3D vertical resistive random-access memory (VRRAM) structure for the first time. The newly proposed synapse operating principle of the 3D VRRAM structure can simplify the complexity of a neuron circuit. This study investigates the operating principle of 3D VRRAM synapses with comb-shaped word lines and demonstrates that the proposed 3D VRRAM structure will be a promising solution for a high-density neural network hardware system.
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31
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Chen X, Zeng K, Zhu X, Ding G, Zou T, Zhang C, Zhou K, Zhou Y, Han S. Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1900213. [PMID: 31179227 PMCID: PMC6548956 DOI: 10.1002/advs.201900213] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2019] [Revised: 02/26/2019] [Indexed: 05/30/2023]
Abstract
Depending on the mobile species involved in the resistive switching process, redox random access memories and conductive bridge random access memories are widely studied with distinct switching mechanisms. Although the two resistance switching types have faithfully proved to be electrochemically linked in metal oxide-based memristive devices, the corresponding photo-induced transition has not yet been realized. Here, a photo-induced transition through the integration of a graphene layer into a titanium oxide-based memory device is demonstrated. Coupled with Raman mapping and an electron energy loss spectroscopy technique, the photo-induced interaction at the heterostructure of graphene/titanium oxide are considered to dominate the transition process. Moreover, a negative differential resistance effect is observed by controlling the applied voltage, which can be credited to the saturation of trap centers (oxygen vacancies) and the increase of interfacial barrier at the graphene/titanium oxide heterojunction.
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Affiliation(s)
- Xiaoli Chen
- Shenzhen Key Laboratory of Flexible Memory Materials and DevicesCollege of Electronic Science and TechnologyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Kelin Zeng
- Institute for Advanced StudyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Xin Zhu
- Institute for Advanced StudyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Guanglong Ding
- Shenzhen Key Laboratory of Flexible Memory Materials and DevicesCollege of Electronic Science and TechnologyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Ting Zou
- College of Chemistry and Environmental EngineeringShenzhen UniversityShenzhenGuangdong518071P. R. China
| | - Chen Zhang
- Shenzhen Key Laboratory of Flexible Memory Materials and DevicesCollege of Electronic Science and TechnologyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Kui Zhou
- Shenzhen Key Laboratory of Flexible Memory Materials and DevicesCollege of Electronic Science and TechnologyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Ye Zhou
- Institute for Advanced StudyShenzhen UniversityShenzhenGuangdong518060P. R. China
| | - Su‐Ting Han
- Shenzhen Key Laboratory of Flexible Memory Materials and DevicesCollege of Electronic Science and TechnologyShenzhen UniversityShenzhenGuangdong518060P. R. China
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32
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Stimulated Ionic Telegraph Noise in Filamentary Memristive Devices. Sci Rep 2019; 9:6310. [PMID: 30988321 PMCID: PMC6465356 DOI: 10.1038/s41598-019-41497-3] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/12/2018] [Accepted: 02/25/2019] [Indexed: 11/18/2022] Open
Abstract
Random telegraph noise is a widely investigated phenomenon affecting the reliability of the reading operation of the class of memristive devices whose operation relies on formation and dissolution of conductive filaments. The trap and the release of electrons into and from defects surrounding the filament produce current fluctuations at low read voltages. In this work, telegraphic resistance variations are intentionally stimulated through pulse trains in HfO2-based memristive devices. The stimulated noise results from the re-arrangement of ionic defects constituting the filament responsible for the switching. Therefore, the stimulated noise has an ionic origin in contrast to the electronic nature of conventional telegraph noise. The stimulated noise is interpreted as raising from a dynamic equilibrium establishing from the tendencies of ionic drift and diffusion acting on the edges of conductive filament. We present a model that accounts for the observed increase of noise amplitude with the average device resistance. This work provides the demonstration and the physical foundation for the intentional stimulation of ionic telegraph noise which, on one hand, affects the programming operations performed with trains of identical pulses, as for neuromorphic computing, and on the other hand, it can open opportunities for applications relying on stochastic processes in nanoscaled devices.
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33
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Ding G, Zeng K, Zhou K, Li Z, Zhou Y, Zhai Y, Zhou L, Chen X, Han ST. Configurable multi-state non-volatile memory behaviors in Ti 3C 2 nanosheets. NANOSCALE 2019; 11:7102-7110. [PMID: 30734807 DOI: 10.1039/c9nr00747d] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
MXenes have drawn considerable attention in both academia and industry due to their attractive properties, such as a combination of metallic conductivity and surface hydrophilicity. However, to the best of our knowledge, the potential use of MXenes in non-volatile resistive random access memories (RRAMs) has rarely been reported. In this paper, we first demonstrated a RRAM device with MXene (Ti3C2) as the active component. The Ti3C2-based RRAM exhibited typical bipolar switching behavior, long retention characteristics, low SET voltage, good mechanical stability and excellent reliability. By adjusting different compliance currents in the SET process, multi-state information storage was achieved. The charge trapping assisting hopping process is considered to be the main mechanism of resistive switching for this fabricated Ti3C2-based RRAM, which was verified by conductive atomic force microscopy (C-AFM) and Kelvin probe force microscopy (KPFM). Moreover, this flexible Ti3C2-based RRAM, with good mechanical stability and long retention properties, was successfully fabricated on a plastic substrate. Ti3C2-based RRAMs may open the door to additional applications and functionalities, with high potential for application in flexible electronics.
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Affiliation(s)
- Guanglong Ding
- College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, P. R. China.
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Kim S, Chen J, Chen YC, Kim MH, Kim H, Kwon MW, Hwang S, Ismail M, Li Y, Miao XS, Chang YF, Park BG. Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching. NANOSCALE 2018; 11:237-245. [PMID: 30534752 DOI: 10.1039/c8nr06694a] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary metal-oxide-semiconductor-compatible materials (hafnium oxide, aluminum oxide, and silicon substrate). A wide range of temperatures, from 25 °C up to 145 °C, in neuronal dynamics was achieved owing to the homeothermic properties and the possibility of spike-induced synaptic behaviors was demonstrated, both presenting critical milestones for the use of emerging memristor-type neuromorphic computing systems in the near future. Biological synaptic behaviors, such as long-term potentiation, long-term depression, and spike-timing-dependent plasticity, are developed systematically, and comprehensive neural network analysis is used for temperature changes and to conform spike-induced neuronal dynamics, providing a new research regime of neurocomputing for potentially harsh environments to overcome the self-heating issue in neuromorphic chips.
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Affiliation(s)
- Sungjun Kim
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
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Zhang Q, Wu H, Yao P, Zhang W, Gao B, Deng N, Qian H. Sign backpropagation: An on-chip learning algorithm for analog RRAM neuromorphic computing systems. Neural Netw 2018; 108:217-223. [DOI: 10.1016/j.neunet.2018.08.012] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/07/2017] [Revised: 06/25/2018] [Accepted: 08/10/2018] [Indexed: 01/24/2023]
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Liu J, Yang H, Ji Y, Ma Z, Chen K, Zhang X, Zhang H, Sun Y, Huang X, Oda S. An electronic synaptic device based on HfO 2TiO x bilayer structure memristor with self-compliance and deep-RESET characteristics. NANOTECHNOLOGY 2018; 29:415205. [PMID: 30051885 DOI: 10.1088/1361-6528/aad64d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We reported on a Ti/HfO2/TiOx/Pt memristor with self-compliance, deep-RESET characteristics and excellent switching performance, including ultrafast program/erase speed (10 ns), a large memory window (103) and good pulse endurance (107 cycles). The self-compliance and deep-RESET characteristics are beneficial for protecting the device from permanent breakdown in both SET and RESET processes especially under the pulse operation mode. In addition to bistable state switching, we also achieved multiple or even continuous conductance state switching under a DC sweep and a pulse-train operation mode in the Ti/HfO2/TiOx/Pt memristor, which can be seen as a substitution of a biological synapse. The capability of continuous modulation conductance (synaptic weight) in the Ti/HfO2/TiOx/Pt memristor was investigated and the potentiation and depression characteristics of the synaptic weight could be precisely tuned by the number or amplitude of the input pulse-train. Moreover, clear experimental evidence of short-term plasticity (STP) and long-term plasticity (LTP) in a single memristor was also demonstrated. Increasing the pulse amplitude or width, or decreasing the interval of two adjacent pulses of the input pulse-train resulted in the memristor behavior transitioning from STP to LTP. The realization of those important synaptic functions in the Ti/HfO2/TiOx/Pt memristor may be suitable for applications in artificial neural systems.
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Affiliation(s)
- Jian Liu
- School of Electronic Science and Engineering, and State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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37
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Woo J, Yu S. Resistive Memory-Based Analog Synapse: The Pursuit for Linear and Symmetric Weight Update. IEEE NANOTECHNOLOGY MAGAZINE 2018. [DOI: 10.1109/mnano.2018.2844902] [Citation(s) in RCA: 60] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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38
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Bayat FM, Prezioso M, Chakrabarti B, Nili H, Kataeva I, Strukov D. Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits. Nat Commun 2018; 9:2331. [PMID: 29899421 PMCID: PMC5998062 DOI: 10.1038/s41467-018-04482-4] [Citation(s) in RCA: 77] [Impact Index Per Article: 12.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2017] [Accepted: 05/02/2018] [Indexed: 11/09/2022] Open
Abstract
The progress in the field of neural computation hinges on the use of hardware more efficient than the conventional microprocessors. Recent works have shown that mixed-signal integrated memristive circuits, especially their passive (0T1R) variety, may increase the neuromorphic network performance dramatically, leaving far behind their digital counterparts. The major obstacle, however, is immature memristor technology so that only limited functionality has been reported. Here we demonstrate operation of one-hidden layer perceptron classifier entirely in the mixed-signal integrated hardware, comprised of two passive 20 × 20 metal-oxide memristive crossbar arrays, board-integrated with discrete conventional components. The demonstrated network, whose hardware complexity is almost 10× higher as compared to previously reported functional classifier circuits based on passive memristive crossbars, achieves classification fidelity within 3% of that obtained in simulations, when using ex-situ training. The successful demonstration was facilitated by improvements in fabrication technology of memristors, specifically by lowering variations in their I-V characteristics.
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Affiliation(s)
- F Merrikh Bayat
- Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93117, USA
| | - M Prezioso
- Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93117, USA
| | - B Chakrabarti
- Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93117, USA
| | - H Nili
- Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93117, USA
| | - I Kataeva
- DENSO CORP, 500-1 Minamiyama, Komenoki-cho, Nisshin, 470-0111, Japan.
| | - D Strukov
- Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93117, USA.
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Yu F, Zhu LQ, Gao WT, Fu YM, Xiao H, Tao J, Zhou JM. Chitosan-Based Polysaccharide-Gated Flexible Indium Tin Oxide Synaptic Transistor with Learning Abilities. ACS APPLIED MATERIALS & INTERFACES 2018; 10:16881-16886. [PMID: 29687712 DOI: 10.1021/acsami.8b03274] [Citation(s) in RCA: 48] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Recently, environment-friendly electronic devices are attracting increasing interest. "Green" artificial synapses with learning abilities are also interesting for neuromorphic platforms. Here, solution-processed chitosan-based polysaccharide electrolyte-gated indium tin oxide (ITO) synaptic transistors are fabricated on polyethylene terephthalate substrate. Good transistor performances against mechanical stress are observed. Short-term synaptic plasticities are mimicked on the proposed ITO synaptic transistor. When applying presynaptic and postsynaptic spikes on gate electrode and drain electrode respectively, spike-timing-dependent plasticity function is mimicked on the synaptic transistor. Transitions from sensory memory to short-term memory (STM) and from STM to long-term memory are also mimicked, demonstrating a "multistore model" brain memory. Furthermore, the flexible ITO synaptic transistor can be dissolved in deionized water easily, indicating potential green neuromorphic platform applications.
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Affiliation(s)
- Fei Yu
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , Zhejiang , People's Republic of China
- Nano Science and Technology Institute , University of Science and Technology of China , Suzhou 215123 , People's Republic of China
- University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China
| | - Li Qiang Zhu
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , Zhejiang , People's Republic of China
- University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China
| | - Wan Tian Gao
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , Zhejiang , People's Republic of China
- School of Material Science and Engineering , Shanghai University , Shanghai 200444 , People's Republic of China
- University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China
| | - Yang Ming Fu
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , Zhejiang , People's Republic of China
- University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China
| | - Hui Xiao
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , Zhejiang , People's Republic of China
- University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China
| | - Jian Tao
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , Zhejiang , People's Republic of China
- University of Chinese Academy of Sciences , Beijing 100049 , People's Republic of China
| | - Ju Mei Zhou
- Faculty of Maritime and Transportation , Ningbo University , Ningbo 315211 , Zhejiang , People's Republic of China
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40
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Kim MK, Lee JS. Short-Term Plasticity and Long-Term Potentiation in Artificial Biosynapses with Diffusive Dynamics. ACS NANO 2018; 12:1680-1687. [PMID: 29357225 DOI: 10.1021/acsnano.7b08331] [Citation(s) in RCA: 65] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The development of electronic devices possessing the functionality of biological synapses is a crucial step toward replicating the capabilities of the human brain. Of the various materials that have been used to realize artificial synapses, renewable natural materials have the advantages of being abundant, inexpensive, biodegradable, and ecologically benign. In this study, we report a biocompatible artificial synapse based on a matrix of the biopolymer ι-carrageenan (ι-car), which exploits Ag dynamics. This artificial synapse emulates the short-term plasticity (STP), paired-pulse facilitation (PPF), and transition from STP to long-term potentiation (LTP) of a biological synapse. The above-mentioned characteristics are realized by exploiting the similarities between the Ag dynamics in the ι-car matrix and the Ca2+ dynamics in a biological synapse. By demonstrating a method that uses biomaterials and Ag dynamics to emulate synaptic functions, this study confirms that ι-car has the potential for constructing neuromorphic systems that use biocompatible artificial synapses.
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Affiliation(s)
- Min-Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 37673, Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 37673, Korea
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
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41
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Kim S, Lim M, Kim Y, Kim HD, Choi SJ. Impact of Synaptic Device Variations on Pattern Recognition Accuracy in a Hardware Neural Network. Sci Rep 2018; 8:2638. [PMID: 29422641 PMCID: PMC5805704 DOI: 10.1038/s41598-018-21057-x] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/02/2017] [Accepted: 01/29/2018] [Indexed: 11/25/2022] Open
Abstract
Neuromorphic systems (hardware neural networks) derive inspiration from biological neural systems and are expected to be a computing breakthrough beyond conventional von Neumann architecture. Interestingly, in neuromorphic systems, the processing and storing of information can be performed simultaneously by modulating the connection strength of a synaptic device (i.e., synaptic weight). Previously investigated synaptic devices can emulate the functionality of biological synapses successfully by utilizing various nano-electronic phenomena; however, the impact of intrinsic synaptic device variability on the system performance has not yet been studied. Here, we perform a device-to-system level simulation of different synaptic device variation parameters in a designed neuromorphic system that has the potential for unsupervised learning and pattern recognition. The effects of variations in parameters such as the weight modulation nonlinearity (NL), the minimum-maximum weight (Gmin and Gmax), and the weight update margin (ΔG) on the pattern recognition accuracy are analyzed quantitatively. These simulation results can provide guidelines for the continued design and optimization of a synaptic device for realizing a functional large-scale neuromorphic computing system.
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Affiliation(s)
- Sungho Kim
- Department of Electrical Engineering, Sejong University, Seoul, 05006, Korea
| | - Meehyun Lim
- Mechatronics R&D Center, Samsung Electronics, Gyonggi-do, 18448, Korea
| | - Yeamin Kim
- School of Electrical Engineering, Kookmin University, Seoul, 02707, Korea
| | - Hee-Dong Kim
- Department of Electrical Engineering, Sejong University, Seoul, 05006, Korea
| | - Sung-Jin Choi
- School of Electrical Engineering, Kookmin University, Seoul, 02707, Korea.
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42
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Wang LG, Zhang W, Chen Y, Cao YQ, Li AD, Wu D. Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO x/ZnO x/TiN Memristive System. NANOSCALE RESEARCH LETTERS 2017; 12:65. [PMID: 28116612 PMCID: PMC5256630 DOI: 10.1186/s11671-017-1847-9] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2016] [Accepted: 01/14/2017] [Indexed: 05/18/2023]
Abstract
In this work, a kind of new memristor with the simple structure of Pt/HfOx/ZnOx/TiN was fabricated completely via combination of thermal-atomic layer deposition (TALD) and plasma-enhanced ALD (PEALD). The synaptic plasticity and learning behaviors of Pt/HfOx/ZnOx/TiN memristive system have been investigated deeply. Multilevel resistance states are obtained by varying the programming voltage amplitudes during the pulse cycling. The device conductance can be continuously increased or decreased from cycle to cycle with better endurance characteristics up to about 3 × 103 cycles. Several essential synaptic functions are simultaneously achieved in such a single double-layer of HfOx/ZnOx device, including nonlinear transmission properties, such as long-term plasticity (LTP), short-term plasticity (STP), and spike-timing-dependent plasticity. The transformation from STP to LTP induced by repetitive pulse stimulation is confirmed in Pt/HfOx/ZnOx/TiN memristive device. Above all, simple structure of Pt/HfOx/ZnOx/TiN by ALD technique is a kind of promising memristor device for applications in artificial neural network.
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Affiliation(s)
- Lai-Guo Wang
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 People’s Republic of China
- Anhui Key Laboratory of Functional Coordination Compounds, School of Chemistry and Chemical Engineering, Anqing Normal University, Anhui, 246011 People’s Republic of China
| | - Wei Zhang
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 People’s Republic of China
| | - Yan Chen
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 People’s Republic of China
| | - Yan-Qiang Cao
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 People’s Republic of China
| | - Ai-Dong Li
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 People’s Republic of China
| | - Di Wu
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093 People’s Republic of China
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43
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Zhou Z, Liu C, Shen W, Dong Z, Chen Z, Huang P, Liu L, Liu X, Kang J. The Characteristics of Binary Spike-Time-Dependent Plasticity in HfO 2-Based RRAM and Applications for Pattern Recognition. NANOSCALE RESEARCH LETTERS 2017; 12:244. [PMID: 28381068 PMCID: PMC5380558 DOI: 10.1186/s11671-017-2023-y] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2016] [Accepted: 03/24/2017] [Indexed: 06/07/2023]
Abstract
A binary spike-time-dependent plasticity (STDP) protocol based on one resistive-switching random access memory (RRAM) device was proposed and experimentally demonstrated in the fabricated RRAM array. Based on the STDP protocol, a novel unsupervised online pattern recognition system including RRAM synapses and CMOS neurons is developed. Our simulations show that the system can efficiently compete the handwritten digits recognition task, which indicates the feasibility of using the RRAM-based binary STDP protocol in neuromorphic computing systems to obtain good performance.
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Affiliation(s)
- Zheng Zhou
- Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Chen Liu
- Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Wensheng Shen
- Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Zhen Dong
- Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Zhe Chen
- Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Peng Huang
- Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Lifeng Liu
- Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Xiaoyan Liu
- Institute of Microelectronics, Peking University, Beijing, 100871, China
| | - Jinfeng Kang
- Institute of Microelectronics, Peking University, Beijing, 100871, China.
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Kwon S, Kim TW, Jang S, Lee JH, Kim ND, Ji Y, Lee CH, Tour JM, Wang G. Structurally Engineered Nanoporous Ta 2O 5-x Selector-Less Memristor for High Uniformity and Low Power Consumption. ACS APPLIED MATERIALS & INTERFACES 2017; 9:34015-34023. [PMID: 28889746 DOI: 10.1021/acsami.7b06918] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A memristor architecture based on metal-oxide materials would have great promise in achieving exceptional energy efficiency and higher scalability in next-generation electronic memory systems. Here, we propose a facile method for fabricating selector-less memristor arrays using an engineered nanoporous Ta2O5-x architecture. The device was fabricated in the form of crossbar arrays, and it functions as a switchable rectifier with a self-embedded nonlinear switching behavior and ultralow power consumption (∼2.7 × 10-6 W), which results in effective suppression of crosstalk interference. In addition, we determined that the essential switching elements, such as the programming power, the sneak current, the nonlinearity value, and the device-to-device uniformity, could be enhanced by in-depth structural engineering of the pores in the Ta2O5-x layer. Our results, on the basis of the structural engineering of metal-oxide materials, could provide an attractive approach for fabricating simple and cost-efficient memristor arrays with acceptable device uniformity and low power consumption without the need for additional addressing selectors.
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Affiliation(s)
- Soonbang Kwon
- KU-KIST Graduate School of Converging Science & Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 136-701, Republic of Korea
| | - Tae-Wook Kim
- Applied Quantum Composites Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology , Wanju, Jeollabuk-do 55324, Republic of Korea
| | - Seonghoon Jang
- KU-KIST Graduate School of Converging Science & Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 136-701, Republic of Korea
| | - Jae-Hwang Lee
- Department of Mechanical and Industrial Engineering, University of Massachusetts , Amherst, Massachusetts 01003, United States
| | - Nam Dong Kim
- Applied Quantum Composites Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology , Wanju, Jeollabuk-do 55324, Republic of Korea
- Department of Chemistry, Department of Material Science and NanoEngineering, and Department of Computer Science, Rice University , 6100 Main Street, Houston, Texas 77005, United States
| | - Yongsung Ji
- Department of Chemistry, Department of Material Science and NanoEngineering, and Department of Computer Science, Rice University , 6100 Main Street, Houston, Texas 77005, United States
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science & Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 136-701, Republic of Korea
| | - James M Tour
- Department of Chemistry, Department of Material Science and NanoEngineering, and Department of Computer Science, Rice University , 6100 Main Street, Houston, Texas 77005, United States
| | - Gunuk Wang
- KU-KIST Graduate School of Converging Science & Technology, Korea University , 145, Anam-ro, Seongbuk-gu, Seoul 136-701, Republic of Korea
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Park Y, Lee JS. Artificial Synapses with Short- and Long-Term Memory for Spiking Neural Networks Based on Renewable Materials. ACS NANO 2017; 11:8962-8969. [PMID: 28837313 DOI: 10.1021/acsnano.7b03347] [Citation(s) in RCA: 100] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Emulation of biological synapses that perform memory and learning functions is an essential step toward realization of bioinspired neuromorphic systems. Artificial synaptic devices have been developed based mostly on inorganic materials and conventional semiconductor device fabrication processes. Here, we propose flexible biomemristor devices based on lignin by a simple solution process. Lignin is one of the most abundant organic polymers on Earth and is biocompatible, biodegradable, as well as environmentally benign. This memristor emulates several essential synaptic behaviors, including analog memory switching, short-term plasticity, long-term plasticity, spike-rate-dependent plasticity, and short-term to long-term transition. A flexible lignin-based artificial synapse device can be operated without noticeable degradation under mechanical bending test. These results suggest lignin can be a promising key component for artificial synapses and flexible electronic devices.
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Affiliation(s)
- Youngjun Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, Republic of Korea
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46
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Lu Y, Lee JH, Chen IW. Scalability of voltage-controlled filamentary and nanometallic resistance memory devices. NANOSCALE 2017; 9:12690-12697. [PMID: 28828416 DOI: 10.1039/c7nr02915b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but a rational physical basis to be relied on to design scalable devices spanning many length scales is still lacking. In particular, there is no clear criterion for switching control in those RRAM devices in which resistance changes are limited to localized nanoscale filaments that experience concentrated heat, electric current and field. Here, we demonstrate voltage-controlled resistance switching, always at a constant characteristic critical voltage, for macro and nanodevices in both filamentary RRAM and nanometallic RRAM, and the latter switches uniformly and does not require a forming process. As a result, area-scalability can be achieved under a device-area-proportional current compliance for the low resistance state of the filamentary RRAM, and for both the low and high resistance states of the nanometallic RRAM. This finding will help design area-scalable RRAM at the nanoscale. It also establishes an analogy between RRAM and synapses, in which signal transmission is also voltage-controlled.
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Affiliation(s)
- Yang Lu
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104-6272, USA.
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47
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Hu L, Fu S, Chen Y, Cao H, Liang L, Zhang H, Gao J, Wang J, Zhuge F. Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1606927. [PMID: 28397309 DOI: 10.1002/adma.201606927] [Citation(s) in RCA: 48] [Impact Index Per Article: 6.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2016] [Revised: 03/03/2017] [Indexed: 06/07/2023]
Abstract
For biological synapses, high sensitivity is crucial for transmitting information quickly and accurately. Compared to biological synapses, memristive ones show a much lower sensitivity to electrical stimuli since much higher voltages are needed to induce synaptic plasticity. Yet, little attention has been paid to enhancing the sensitivity of synaptic devices. Here, electrochemical metallization memory cells based on lightly oxidized ZnS films are found to show highly controllable memristive switching with an ultralow SET voltage of several millivolts, which likely originates from a two-layer structure of ZnS films, i.e., the lightly oxidized and unoxidized layers, where the filament rupture/rejuvenation is confined to the two-layer interface region several nanometers in thickness due to different ion transport rates in these two layers. Based on such devices, an ultrasensitive memristive synapse is realized where the synaptic functions of both short-term plasticity and long-term potentiation are emulated by applying electrical stimuli several millivolts in amplitude, whose sensitivity greatly surpasses that of biological synapses. The dynamic processes of memorizing and forgetting are mimicked through a 5 × 5 memristive synapse array. In addition, the ultralow operating voltage provides another effective solution to the relatively high energy consumption of synaptic devices besides reducing the operating current and pulse width.
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Affiliation(s)
- Lingxiang Hu
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, China
| | - Sheng Fu
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Youhu Chen
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Hongtao Cao
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Lingyan Liang
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Hongliang Zhang
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Junhua Gao
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Jingrui Wang
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Fei Zhuge
- Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
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48
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Wang C, He W, Tong Y, Zhang Y, Huang K, Song L, Zhong S, Ganeshkumar R, Zhao R. Memristive Devices with Highly Repeatable Analog States Boosted by Graphene Quantum Dots. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1603435. [PMID: 28296020 DOI: 10.1002/smll.201603435] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2016] [Revised: 01/30/2017] [Indexed: 06/06/2023]
Abstract
Memristive devices, having a huge potential as artificial synapses for low-power neural networks, have received tremendous attention recently. Despite great achievements in demonstration of plasticity and learning functions, little progress has been made in the repeatable analog resistance states of memristive devices, which is, however, crucial for achieving controllable synaptic behavior. The controllable behavior of synapse is highly desired in building neural networks as it helps reduce training epochs and diminish error probability. Fundamentally, the poor repeatability of analog resistance states is closely associated with the random formation of conductive filaments, which consists of oxygen vacancies. In this work, graphene quantum dots (GQDs) are introduced into memristive devices. By virtue of the abundant oxygen anions released from GQDs, the GQDs can serve as nano oxygen-reservoirs and enhance the localization of filament formation. As a result, analog resistance states with highly tight distribution are achieved with nearly 85% reduction in variations. In addition the insertion of GQDs can alter the energy band alignment and boost the tunneling current, which leads to significant reduction in both switching voltages and their distribution variations. This work may pave the way for achieving artificial neural networks with accurate and efficient learning capability.
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Affiliation(s)
- Changhong Wang
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372, Singapore
| | - Wei He
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372, Singapore
| | - Yi Tong
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372, Singapore
| | - Yishu Zhang
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372, Singapore
| | - Kejie Huang
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372, Singapore
| | - Li Song
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372, Singapore
| | - Shuai Zhong
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372, Singapore
| | - Rajasekaran Ganeshkumar
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372, Singapore
| | - Rong Zhao
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372, Singapore
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Li J, Duan Q, Zhang T, Yin M, Sun X, Cai Y, Li L, Yang Y, Huang R. Tuning analog resistive switching and plasticity in bilayer transition metal oxide based memristive synapses. RSC Adv 2017. [DOI: 10.1039/c7ra07522g] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
The existence of rich suboxide phases is favorable for increasing the number of weight states in transition metal oxide synapses.
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Affiliation(s)
- Jingxian Li
- Key Laboratory of Microelectronic Devices and Circuits (MOE)
- Institute of Microelectronics
- Peking University
- Beijing 100871
- China
| | - Qingxi Duan
- Key Laboratory of Microelectronic Devices and Circuits (MOE)
- Institute of Microelectronics
- Peking University
- Beijing 100871
- China
| | - Teng Zhang
- Key Laboratory of Microelectronic Devices and Circuits (MOE)
- Institute of Microelectronics
- Peking University
- Beijing 100871
- China
| | - Minghui Yin
- Key Laboratory of Microelectronic Devices and Circuits (MOE)
- Institute of Microelectronics
- Peking University
- Beijing 100871
- China
| | - Xinhao Sun
- Key Laboratory of Microelectronic Devices and Circuits (MOE)
- Institute of Microelectronics
- Peking University
- Beijing 100871
- China
| | - Yimao Cai
- Key Laboratory of Microelectronic Devices and Circuits (MOE)
- Institute of Microelectronics
- Peking University
- Beijing 100871
- China
| | - Lidong Li
- State Key Lab for Advanced Metals and Materials
- School of Materials Science and Engineering
- University of Science and Technology Beijing
- Beijing 100083
- China
| | - Yuchao Yang
- Key Laboratory of Microelectronic Devices and Circuits (MOE)
- Institute of Microelectronics
- Peking University
- Beijing 100871
- China
| | - Ru Huang
- Key Laboratory of Microelectronic Devices and Circuits (MOE)
- Institute of Microelectronics
- Peking University
- Beijing 100871
- China
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50
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Wang IT, Chang CC, Chiu LW, Chou T, Hou TH. 3D Ta/TaO x /TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applications. NANOTECHNOLOGY 2016; 27:365204. [PMID: 27483492 DOI: 10.1088/0957-4484/27/36/365204] [Citation(s) in RCA: 42] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The implementation of highly anticipated hardware neural networks (HNNs) hinges largely on the successful development of a low-power, high-density, and reliable analog electronic synaptic array. In this study, we demonstrate a two-layer Ta/TaO x /TiO2/Ti cross-point synaptic array that emulates the high-density three-dimensional network architecture of human brains. Excellent uniformity and reproducibility among intralayer and interlayer cells were realized. Moreover, at least 50 analog synaptic weight states could be precisely controlled with minimal drifting during a cycling endurance test of 5000 training pulses at an operating voltage of 3 V. We also propose a new state-independent bipolar-pulse-training scheme to improve the linearity of weight updates. The improved linearity considerably enhances the fault tolerance of HNNs, thus improving the training accuracy.
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Affiliation(s)
- I-Ting Wang
- Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan
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