Dynamic observation of phase transformation behaviors in indium(III) selenide nanowire based phase change memory

Structural Phase Transitions between Layered Indium Selenide for Integrated Photonic Memory

The primary mechanism of optical memoristive devices relies on phase transitions between amorphous and crystalline states. The slow or energy-hungry amorphous-crystalline transitions in optical phase-change materials are detrimental to the scalability and performance of devices. Leveraging an integrated photonic platform, nonvolatile and reversible switching between two layered structures of indium selenide (In₂ Se₃ ) triggered by a single nanosecond pulse is demonstrated. The high-resolution pair distribution function reveals the detailed atomistic transition pathways between the layered structures. With interlayer "shear glide" and isosymmetric phase transition, switching between the α- and β-structural states contains low re-configurational entropy, allowing reversible switching between layered structures. Broadband refractive index contrast, optical transparency, and volumetric effect in the crystalline-crystalline phase transition are experimentally characterized in molecular-beam-epitaxy-grown thin films and compared to ab initio calculations. The nonlinear resonator transmission spectra measure of incremental linear loss rate of 3.3 GHz, introduced by a 1.5 µm-long In₂ Se₃ -covered layer, resulted from the combinations of material absorption and scattering.

In situ TEM observations of void movement in Ag nanowires affecting the electrical properties under biasing

In this study we investigated the electromigration (EM) of metal electrodes and the effect of stacking faults on the EM in Ag nanowires (NWs). We used the galvanic replacement method to synthesize these NWs by controlling the concentration of silver nitrate. In situ transmission electron microscopy (TEM) revealed the presence of both intrinsic and extrinsic stacking faults in the Ag NWs. We found that planar defects increased the lifetime of the devices with an intrinsic change in the material properties. Our EM measurements involved examinations of the change in electrical resistance (arising from void formation in the NW as a result of electromigration) as well as direct visual observation of the shape (using in situ TEM).

Electron beam irradiation for the formation of thick Ag film on Ag3PO4

This study demonstrates that the electron beam irradiation of materials, typically used in characterization measurements, could be employed for advanced fabrication, modification, and functionalization of composites. We developed irradiation equipment using an electron beam irradiation source to be applied in materials modification. Using this equipment, the formation of a thick Ag film on the Ag₃PO₄ semiconductor is carried out by electron beam irradiation for the first time. This is confirmed by various experimental techniques (X-ray diffraction, field-emission scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy) and ab initio molecular dynamics simulations. Our calculations demonstrate that, at the earlier stages, metallic Ag growth is initiated preferentially at the (110) surface, with the reduction of surface Ag cations forming metallic Ag clusters. As the (100) and (111) surfaces have smaller numbers of exposed Ag cations, the reductions on these surfaces are slower and are accompanied by the formation of O₂ molecules.

This study demonstrates that the electron beam irradiation of materials, typically used in characterization measurements, could be employed for advanced fabrication, modification, and functionalization of composites.

de Souza FA, Paz WS, Scopel WL. Tuning the photocatalytic water-splitting capability of two-dimensional α-In2Se3 by strain-driven band gap engineering

In this work, we have investigated the effects of in-plane mechanical strains on the electronic properties of single-layer α-In₂Se₃ by means of density functional theory (DFT) calculations.

In Situ Transmission Electron Microscopy Characterization and Manipulation of Two-Dimensional Layered Materials beyond Graphene

Two-dimensional (2D) ultra-thin materials beyond graphene with rich physical properties and unique layered structures are promising for applications in electronics, chemistry, energy, and bioscience, etc. The interaction mechanisms among the structures, chemical compositions and physical properties of 2D layered materials are critical for fundamental nanosciences and the practical fabrication of next-generation nanodevices. Transmission electron microscopy (TEM), with its high spatial resolution and versatile external fields, is undoubtedly a powerful tool for the static characterization and dynamic manipulation of nanomaterials and nanodevices at the atomic scale. The rapid development of thin-film and precision microelectromechanical systems (MEMS) techniques allows 2D layered materials and nanodevices to be probed and engineered inside TEM under external stimuli such as thermal, electrical, mechanical, liquid/gas environmental, optical, and magnetic fields at the nanoscale. Such advanced technologies leverage the traditional static TEM characterization into an in situ and interactive manipulation of 2D layered materials without sacrificing the resolution or the high vacuum chamber environment, facilitating exploration of the intrinsic structure-property relationship of 2D layered materials. In this Review, the dynamic properties tailored and observed by the most advanced and unprecedented in situ TEM technology are introduced. The challenges in spatial, time and energy resolution are discussed also.

Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5 -Based Memristors

The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta₂ O₅ /Pt system. The device is switched to a low-resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyses demonstrate that the filament is composed by a stack of oxygen vacancies and Ag metal.

The development of sol–gel derived TiO2 thin films and corresponding memristor architectures

The electrical response of Pt/TiO₂/Pt with an atmosphere-controlled structure of a switching layer depends on electroforming parameters and architecture.

Generation and the role of dislocations in single-crystalline phase-change In2Se3 nanowires under electrical pulses

We report the observation of the generation of dislocations in single-crystal phase-change In2Se3 nanowires under electrical pulses and the impact of these dislocations on electrical properties. Particularly, we correlated the atomic-scale structural characteristics with local electrical resistance variations, by performing transmission electron microscopy and scanning Kelvin probe microscopy on the same nanowires. By coupling the experimental results with first-principles density functional theory calculations, we show that the immobile dislocations are generated via vacancy condensations. Importantly, these dislocations lead to several orders of magnitude increase in the electrical resistance, while maintaining the single crystallinity of the lattice. These results significantly advance the fundamental understanding of the structure-property relation in this phase-change material under transient electrical excitations. From a practical perspective, the significant increase in the electrical resistance, driven by the formation of dislocations, can be exploited as a new electronic state in the single-crystalline phase in this phase-change material.

Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

The filament in aAu/Ta2 O5 /Au system is analyzed and determined to be a nanoscaled TaO2-x filament. A shrunken anode localizes the filament formation and the defect boundary leads to faster accumulation of oxygen vacancies. The defect changes the switching domination between electron transport and oxygen-vacancy migration. The migration of oxygen vacancies limits the filament dynamics, indicating the crucial role played by oxygen defects.

Transient Structures and Possible Limits of Data Recording in Phase-Change Materials

Phase-change materials (PCMs) represent the leading candidates for universal data storage devices, which exploit the large difference in the physical properties of their transitional lattice structures. On a nanoscale, it is fundamental to determine their performance, which is ultimately controlled by the speed limit of transformation among the different structures involved. Here, we report observation with atomic-scale resolution of transient structures of nanofilms of crystalline germanium telluride, a prototypical PCM, using ultrafast electron crystallography. A nonthermal transformation from the initial rhombohedral phase to the cubic structure was found to occur in 12 ps. On a much longer time scale, hundreds of picoseconds, equilibrium heating of the nanofilm is reached, driving the system toward amorphization, provided that high excitation energy is invoked. These results elucidate the elementary steps defining the structural pathway in the transformation of crystalline-to-amorphous phase transitions and describe the essential atomic motions involved when driven by an ultrafast excitation. The establishment of the time scales of the different transient structures, as reported here, permits determination of the possible limit of performance, which is crucial for high-speed recording applications of PCMs.