Syntheses, Structures, and Electronic Properties of the Branched Oligogermanes (Ph3Ge)3GeH and (Ph3Ge)3GeX (X = Cl, Br, I)

Oligoorganogermanes: Interplay between Aryl and Trimethylsilyl Substituents

Derivatives of main group elements containing element-element bonds are characterized by unique properties due to σ-conjugation, which is an attractive subject for investigation. A novel series of digermanes, Ar₃Ge-Ge(SiMe₃)₃, containing aryl (Ar = p-C₆H₄Me (1), p-C₆H₄F (2), C₆F₅ (3)) and trimethylsilyl substituents, was synthesized by the reaction of germyl potassium salt, [(Me₃Si)₃GeK*THF], with triarylchlorogermanes, Ar₃GeCl. The optical and electronic properties of such substituted oligoorganogermanes were investigated spectroscopically by UV/vis absorption spectroscopy and theoretically by DFT calculations. The molecular structures of compounds 1 and 2 were studied by XRD analysis. Conjugation between all structural fragments (Ge-Ge, Ge-Si, Ge-Ar, where Ar is an electron-donating or withdrawing group) was found to affect the properties.

Crystal Structure of the Protonated Germanide Cluster [HGe9]3−

A single crystal X-ray diffraction study of the new compound [Rb([2.2.2]crypt)]2[Rb([18]crown−6)][HGe9]·4NH3 revealed the presence of the first protonated nine-atom germanide cluster [HGe9]3−. It forms from Rb4Ge9 in liquid ammonia, so that [Ge9]4− can be considered as the base and [HGe9]3− its formally conjugated acid. The H atom is attached to a germanium vertex atom of the basal square plane, as it is known for [RGe9]3− (R = C5H9, Mes, etc.) or [HE9]3− (E = Si, Sn). In addition, the proton could be located unambiguously in the Fourier difference map. [HGe9]3− also represents a nido cluster species with 22 cluster-bonding electrons, which can be considered the most stable structure for nine-atom cluster species for all group 14 elements.

Ge14 Br8 (PEt3 )4 : A Subhalide Cluster of Germanium

Heating a metastable solution of Ge^I Br to room temperature led to the first structurally characterized metalloid subhalide cluster Ge₁₄ Br₈ (PEt₃ )₄ (1). Furthermore 1 can be seen as the first isolated binary halide cluster on the way from Ge^I Br to elemental germanium, giving insight into the complex reaction mechanism of its disproportionation reaction. Quantum chemical calculations further indicate that a classical bonding situation is realized within 1 and that the last step of the formation of 1 might include the trapping of GeBr₂ units.

Incorporating Methyl and Phenyl Substituted Stannylene Units into Oligosilanes. The Influence on Optical Absorption Properties

Molecules containing catenated heavy group 14 atoms are known to exhibit the interesting property of σ-bond electron delocalization. While this is well studied for oligo- and polysilanes the current paper addresses the UV-absorption properties of small tin containing oligosilanes in order to evaluate the effects of Sn–Si and Sn–Sn bonds as well as the results of substituent exchange from methyl to phenyl groups. The new stannasilanes were compared to previously investigated oligosilanes of equal chain lengths and substituent pattern. Replacing the central SiMe₂ group in a pentasilane by a SnMe₂ unit caused a bathochromic shift of the low-energy band (λ_max = 260 nm) of 14 nm in the UV spectrum. If, instead of a SnMe_2, a SnPh₂ unit is incorporated, the bathochromic shift of 33 nm is substantially larger. Keeping the SnMe₂ unit and replacing the two central silicon with tin atoms causes shift of the respective band (λ = 286 nm) some 26 nm to the red. A similar approach for hexasilanes where the model oligosilane [(Me₃Si)₃Si]₂(SiMe₂)₂ (λ_max = 253 nm) was modified in a way that the central tetramethyldisilanylene unit was exchanged for a tetraphenyldistannanylene caused a 50 nm bathochromic shift to a low-energy band with λ_max = 303 nm.

Molecular Oligogermanes and Related Compounds: Structure, Optical and Semiconductor Properties

The optical (UV/Vis absorbance, fluorescence in the solid state and in solution) and semiconducting properties of a number of di- and trigermanes as well as related silicon- and tin-containing germanes, 1-6 ((p-Tol)₃ GeGeMe₃ (1), Ph₃ SnGe(SiMe₃ )₃ (2), (C₆ F₅ )₃ GeGePh₃ (3), (p-Tol)₃ GeSiMe₂ SiMe₃ (4), (p-Tol)₃ GeGeMe₂ Ge(p-Tol)₃ (5), (p-Tol)₃ GeSiMe₂ SiMe₂ Ge(p-Tol)₃ (6)) were investigated. Molecular structures of 5 and 6 were studied by X-ray diffraction analysis. All compounds displayed luminescence properties. In addition, a band gap (of about 3.3 eV) was measured for compounds 1-6 showing that those molecules display semiconductor properties.

All-Inorganic Germanium Nanocrystal Films by Cationic Ligand Exchange

We introduce a new paradigm for group IV nanocrystal surface chemistry based on room temperature surface activation that enables ionic ligand exchange. Germanium nanocrystals synthesized in a gas-phase plasma reactor are functionalized with labile, cationic alkylammonium ligands rather than with traditional covalently bound groups. We employ Fourier transform infrared and (1)H nuclear magnetic resonance spectroscopies to demonstrate the alkylammonium ligands are freely exchanged on the germanium nanocrystal surface with a variety of cationic ligands, including short inorganic ligands such as ammonium and alkali metal cations. This ionic ligand exchange chemistry is used to demonstrate enhanced transport in germanium nanocrystal films following ligand exchange as well as the first photovoltaic device based on an all-inorganic germanium nanocrystal absorber layer cast from solution. This new ligand chemistry should accelerate progress in utilizing germanium and other group IV nanocrystals for optoelectronic applications.

σ-Bond electron delocalization of branched oligogermanes and germanium containing oligosilanes

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Oligogermanes and germaoligosilanes isostructural to oligosilanes were synthesized.

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UV absorption data and X-ray diffraction revealed only marginal differences.

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Conformational flexibility is directly reflected in the UV absorption spectrum.

In order to evaluate the influence of germanium atoms in oligo- and polysilanes, a number of oligosilane compounds were prepared where two or more silicon atoms were replaced by germanium. While it can be expected that the structural features of thus altered molecules do not change much, the more interesting question is, whether this modification would have a profound influence on the electronic structure, in particular on the property of σ-bond electron delocalization.

The UV-spectroscopic comparison of the oligosilanes with germanium enriched oligosilanes and also with oligogermanes showed a remarkable uniform picture. The expected bathochromic shift for oligogermanes and Ge-enriched oligosilanes was observed but its extent was very small. For the low energy absorption band the bathochromic shift from a hexasilane chain (256 nm) to a hexagermane chain with identical substituent patterns (259 nm) amounts to a mere 3 nm.

Synthesis, structure, and properties of the hexagermane Pri3Ge(GePh2)4GePri3

The synthesis of the hexagermane Pri3Ge(GePh2)4GePri3 was achieved starting from the cyclotetragermane (Ph2Ge)4. Ring-opening of (Ph2Ge)4 with Br2 yielded Br(GePh2)4Br that was converted to H(GePh2)4H, and this material was treated with two equiv. of Pri3GeNMe2 to furnish Pri3Ge(GePh2)4GePri3 via the hydrogermolysis reaction. The X-ray crystal structures of (Ph2Ge)4, Br(GePh2)4Br and Pri3Ge(GePh2)4GePri3 were determined. The hexagermane Pri3Ge(GePh2)4GePri3 represents the longest structurally characterized linear oligogermane reported to date and exhibits physical properties that resemble those of the larger polygermane systems. The hexagermane is luminescent and interacts with polarized light, appearing pale yellow under one orientation of polarized light and deep blue under the opposite orientation. The electrochemistry of Pri3Ge(GePh2)4GePri3 was also explored, and this species exhibits the expected five irreversible oxidation waves.