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Wang C, Zhang Y, Zhang B, Wang B, Zhang J, Chen L, Zhang Q, Wang ZL, Ren K. Flexophotovoltaic Effect in Potassium Sodium Niobate/Poly(Vinylidene Fluoride-Trifluoroethylene) Nanocomposite. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2004554. [PMID: 33898200 PMCID: PMC8061384 DOI: 10.1002/advs.202004554] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/25/2020] [Indexed: 06/12/2023]
Abstract
Flexoelectricity is an electromechanical coupling effect in which electric polarization is generated by a strain gradient. In this investigation, a potassium sodium niobite/poly(vinylidene fluoride-trifluoroethylene) (KNN/PVDF-TrFE)-based nanocomposite is fabricated, and the flexoelectric effect is used to enhance the photovoltaic current (I pv) in the nanocomposite. It is found that both a pyroelectric current and photovoltaic current can be generated simultaneously in a light illumination process. However, the photovoltaic current (I pv) in this process contributes ≈85% of the total current. When assessing the effect of flexoelectricity with a curvature of 1/20, the I pv of the curved KNN/PVDF-TrFE (20%) (K/P-20) composite increased by ≈13.9% compared to that of the flat K/P-20 nanocomposite. Similarly, at a curvature of 1/20, the I pv of the K/P-20 nanocomposite is 71.6% higher than that of the PVDF-TrFE film. However, the photovoltaic effect induced by flexoelectricity is much higher than the increased polarization from flexoelectricity, so this effect is called as the flexophotovoltaic effect. Furthermore, the calculated energy conversion efficiency of the K/P-20 film is 0.017%, which is comparable to the previous research result. This investigation shows great promise for PVDF-based nanocomposites in ferroelectric memory device applications.
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Affiliation(s)
- Chenchen Wang
- Beijing Key Laboratory of Micro‐nano Energy and Sensor; CAS Center for Excellence in NanoscienceBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesBeijing101400P. R. China
| | - Yang Zhang
- Institute of SemiconductorsChinese Academy of SciencesBeijing100083P.R. China
| | - Bowen Zhang
- Beijing Key Laboratory of Micro‐nano Energy and Sensor; CAS Center for Excellence in NanoscienceBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesBeijing101400P. R. China
| | - Bo Wang
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Jinxi Zhang
- Beijing Key Laboratory of Micro‐nano Energy and Sensor; CAS Center for Excellence in NanoscienceBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesBeijing101400P. R. China
| | - Long‐Qing Chen
- Department of Materials Science and EngineeringThe Pennsylvania State UniversityUniversity ParkPA16802USA
| | - Qiming Zhang
- Department of Electrical Engineering and Materials Research InstitutePennsylvania State UniversityUniversity ParkPA16802USA
| | - Zhong Lin Wang
- Beijing Key Laboratory of Micro‐nano Energy and Sensor; CAS Center for Excellence in NanoscienceBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesBeijing101400P. R. China
- School of Material Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
| | - Kailiang Ren
- Beijing Key Laboratory of Micro‐nano Energy and Sensor; CAS Center for Excellence in NanoscienceBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of SciencesBeijing101400P. R. China
- School of Physical Science and TechnologyGuangxi UniversityNanningGuangxi530004P.R. China
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Shu L, Ke S, Fei L, Huang W, Wang Z, Gong J, Jiang X, Wang L, Li F, Lei S, Rao Z, Zhou Y, Zheng RK, Yao X, Wang Y, Stengel M, Catalan G. Photoflexoelectric effect in halide perovskites. NATURE MATERIALS 2020; 19:605-609. [PMID: 32313265 DOI: 10.1038/s41563-020-0659-y] [Citation(s) in RCA: 45] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2019] [Accepted: 03/06/2020] [Indexed: 05/28/2023]
Abstract
Harvesting environmental energy to generate electricity is a key scientific and technological endeavour of our time. Photovoltaic conversion and electromechanical transduction are two common energy-harvesting mechanisms based on, respectively, semiconducting junctions and piezoelectric insulators. However, the different material families on which these transduction phenomena are based complicate their integration into single devices. Here we demonstrate that halide perovskites, a family of highly efficient photovoltaic materials1-3, display a photoflexoelectric effect whereby, under a combination of illumination and oscillation driven by a piezoelectric actuator, they generate orders of magnitude higher flexoelectricity than in the dark. We also show that photoflexoelectricity is not exclusive to halides but a general property of semiconductors that potentially enables simultaneous electromechanical and photovoltaic transduction and harvesting in unison from multiple energy inputs.
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Affiliation(s)
- Longlong Shu
- School of Materials Science and Engineering, Nanchang University, Nanchang, People's Republic of China.
| | - Shanming Ke
- School of Materials Science and Engineering, Nanchang University, Nanchang, People's Republic of China
| | - Linfeng Fei
- School of Materials Science and Engineering, Nanchang University, Nanchang, People's Republic of China
| | - Wenbin Huang
- The State Key Lab of Mechanical Transmissions, Chongqing University, Chongqing, People's Republic of China
| | - Zhiguo Wang
- The State Key Lab of Mechanical Transmissions, Chongqing University, Chongqing, People's Republic of China
| | - Jinhui Gong
- School of Materials Science and Engineering, Nanchang University, Nanchang, People's Republic of China
| | - Xiaoning Jiang
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC, USA
| | - Li Wang
- School of Materials Science and Engineering, Nanchang University, Nanchang, People's Republic of China
| | - Fei Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiao Tong University, Xi'an, People's Republic of China
| | - Shuijin Lei
- School of Materials Science and Engineering, Nanchang University, Nanchang, People's Republic of China
| | - Zhenggang Rao
- School of Materials Science and Engineering, Nanchang University, Nanchang, People's Republic of China
| | - Yangbo Zhou
- School of Materials Science and Engineering, Nanchang University, Nanchang, People's Republic of China
| | - Ren-Kui Zheng
- School of Materials Science and Engineering, Nanchang University, Nanchang, People's Republic of China
| | - Xi Yao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiao Tong University, Xi'an, People's Republic of China
| | - Yu Wang
- School of Materials Science and Engineering, Nanchang University, Nanchang, People's Republic of China
| | - Massimiliano Stengel
- Institucio Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Catalonia
- Institut de Ciencia de Materials de Barcelona (ICMAB), Consejo Superior de Investigaciones Científicas (CSIC), Campus Universitat Autonoma de Barcelona, Barcelona, Catalonia
| | - Gustau Catalan
- Institucio Catalana de Recerca i Estudis Avançats (ICREA), Barcelona, Catalonia.
- Institut Catala de Nanociencia i Nanotecnologia (ICN2), Consejo Superior de Investigaciones Científicas and The Barcelona Institute of Science and Technology (CSIC-BIST), Campus Universitat Autonoma de Barcelona, Barcelona, Catalonia.
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