1
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Jin Q, Zhang Q, Bai H, Yang M, Ga Y, Chen S, Hong H, Cui T, Rong D, Lin T, Wang JO, Ge C, Wang C, Cao Y, Gu L, Song G, Wang S, Jiang K, Cheng ZG, Zhu T, Yang H, Jin KJ, Guo EJ. Syntropic spin alignment at the interface between ferromagnetic and superconducting nitrides. Natl Sci Rev 2024; 11:nwae107. [PMID: 39007011 PMCID: PMC11242462 DOI: 10.1093/nsr/nwae107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Revised: 02/07/2024] [Accepted: 03/04/2024] [Indexed: 07/16/2024] Open
Abstract
The magnetic correlations at the superconductor/ferromagnet (S/F) interfaces play a crucial role in realizing dissipation-less spin-based logic and memory technologies, such as triplet-supercurrent spin-valves and 'π' Josephson junctions. Here we report the observation of an induced large magnetic moment at high-quality nitride S/F interfaces. Using polarized neutron reflectometry and DC SQUID measurements, we quantitatively determined the magnetization profile of the S/F bilayer and confirmed that the induced magnetic moment in the adjacent superconductor only exists below T C. Interestingly, the direction of the induced moment in the superconductors was unexpectedly parallel to that in the ferromagnet, which contrasts with earlier findings in S/F heterostructures based on metals or oxides. First-principles calculations verified that the unusual interfacial spin texture observed in our study was caused by the Heisenberg direct exchange coupling with constant J∼4.28 meV through d-orbital overlapping and severe charge transfer across the interfaces. Our work establishes an incisive experimental probe for understanding the magnetic proximity behavior at S/F interfaces and provides a prototype epitaxial 'building block' for superconducting spintronics.
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Affiliation(s)
- Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - He Bai
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Meng Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yonglong Ga
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Haitao Hong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ting Cui
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dongke Rong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jia-Ou Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Guangdong 523808, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Guangdong 523808, China
| | - Yanwei Cao
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Lin Gu
- National Center for Electron Microscopy in Beijing and School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Guozhu Song
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Shanmin Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Kun Jiang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Guangdong 523808, China
| | - Zhi-Gang Cheng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Guangdong 523808, China
| | - Hongxin Yang
- School of Physics, Zhejiang University, Hangzhou 310027, China
| | - Kui-juan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Guangdong 523808, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Guangdong 523808, China
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2
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Hu L, Liu D, Zheng F, Yang X, Yao Y, Shen B, Huang B. Hybrid van der Waals Epitaxy. PHYSICAL REVIEW LETTERS 2024; 133:046102. [PMID: 39121412 DOI: 10.1103/physrevlett.133.046102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/01/2024] [Revised: 05/13/2024] [Accepted: 06/12/2024] [Indexed: 08/11/2024]
Abstract
The successful growth of non-van der Waals (vdW) group-III nitride epilayers on vdW substrates not only opens an unprecedented opportunity to obtain high-quality semiconductor thinfilm but also raises a strong debate for its growth mechanism. Here, combining multiscale computational approaches and experimental characterization, we propose that the growth of a nitride epilayer on a vdW substrate, e.g., AlN on graphene, may belong to a previously unknown model, named hybrid vdW epitaxy (HVE). Atomic-scale simulations demonstrate that a unique interfacial hybrid-vdW interaction can be created between AlN and graphene, and, consequently, a first-principles-based continuum growth model is developed to capture the unusual features of HVE. Surprisingly, it is revealed that the in-plane and out-of-plane growth are strongly correlated in HVE, which is absent in existing growth models. The concept of HVE is confirmed by our experimental measurements, presenting a new growth mechanism beyond the current category of material growth.
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Affiliation(s)
- Lin Hu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Danshuo Liu
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University, Beijing 100871, China
| | | | - Xuelin Yang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University, Beijing 100871, China
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3
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John P, Trampert A, Van Dinh D, Spallek D, Lähnemann J, Kaganer VM, Geelhaar L, Brandt O, Auzelle T. ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures. NANO LETTERS 2024; 24:6233-6239. [PMID: 38758973 PMCID: PMC11140757 DOI: 10.1021/acs.nanolett.4c00659] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Revised: 05/15/2024] [Accepted: 05/15/2024] [Indexed: 05/19/2024]
Abstract
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN(11̅00) surface. To this end, ScN is grown on freestanding GaN(11̅00) substrates and self-assembled GaN nanowires exhibiting (11̅00) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]∥GaN(11̅00)[0001], providing a congruent, low-symmetry interface. The 13.1% uniaxial lattice mismatch occurring in this orientation mostly relaxes within the first few monolayers of growth by forming a near-coincidence site lattice, where 7 GaN planes coincide with 8 ScN planes, leaving the ScN surface nearly free of extended defects. Overgrowth of the ScN with GaN leads to a kinetic stabilization of the zinc blende phase, that rapidly develops wurtzite inclusions nucleating on {111} nanofacets, commonly observed during zinc blende GaN growth. Our ScN/GaN(11̅00) platform opens a new route for the epitaxy of twin-free metal-semiconductor heterostructures including closely lattice-matched GaN, ScN, HfN, and ZrN compounds.
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Affiliation(s)
- Philipp John
- Paul-Drude-Institut für Festkörperelektronik,
Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Achim Trampert
- Paul-Drude-Institut für Festkörperelektronik,
Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Duc Van Dinh
- Paul-Drude-Institut für Festkörperelektronik,
Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Domenik Spallek
- Paul-Drude-Institut für Festkörperelektronik,
Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Jonas Lähnemann
- Paul-Drude-Institut für Festkörperelektronik,
Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Vladimir M. Kaganer
- Paul-Drude-Institut für Festkörperelektronik,
Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik,
Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Oliver Brandt
- Paul-Drude-Institut für Festkörperelektronik,
Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Thomas Auzelle
- Paul-Drude-Institut für Festkörperelektronik,
Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
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4
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Li S, Yan X, Lin Z, Kang L. Wide-Band Gap Binary Semiconductor P 3N 5 with Highly Anisotropic Optical Linearity and Nonlinearity. Inorg Chem 2024; 63:5220-5226. [PMID: 38456453 DOI: 10.1021/acs.inorgchem.4c00261] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Wide-band gap binary semiconductors find extensive use in advanced optoelectronic devices due to their exceptional electronic, optical, and defect properties. This paper systematically investigates the linear and nonlinear optical and defect properties of two P3N5 structures as wide-band gap binary semiconductors and evaluates their responses to external pressure modulation using first-principles calculations. The research demonstrates that the high-pressure phase of P3N5 has a broad UV solar-blind band gap (Eg ∼ 4.9 eV) and displays highly anisotropic optical linearity and nonlinearity, including a significant second harmonic generation effect (d24 ∼ 1.8 pm/V) and large birefringence (Δn ∼ 0.12), exhibiting a relatively small change in amplitude against pressure due to unique lattice incompressibility. This material enables birefringent phase-matched second harmonic coherent output at a much shorter wavelength (down to 286 nm) than currently known wide-band gap binary semiconductors such as SiC, GaN, AlN, Ga2O3, and Si3N4. An in-depth study of the defect properties of P3N5 in relation to its UV optical properties is also provided. These results are important references for utilizing the optoelectronic functions of this binary material system.
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Affiliation(s)
- Shihang Li
- Functional Crystals Lab, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaolan Yan
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zheshuai Lin
- Functional Crystals Lab, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Kang
- Functional Crystals Lab, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
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5
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Meng Y, Wang Y, Liu C, Yan P, Sun K, Wang Y, Tian R, Cao R, Zhu J, Do H, Lu J, Ge Z. Epitaxial Growth of α-FAPbI 3 at a Well-Matched Heterointerface for Efficient Perovskite Solar Cells and Solar Modules. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309208. [PMID: 38009812 DOI: 10.1002/adma.202309208] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2023] [Revised: 11/17/2023] [Indexed: 11/29/2023]
Abstract
Although the FAPbI3 perovskite system exhibits an impressive optoelectronic characteristic and thermal stability because of its energetically unstable black phase at room temperature, it is considerably challenging to attain a controllable and oriented nucleation of α-FAPbI3 . To overcome this challenge, a 2D perovskite with a released inorganic octahedral distortion designed by weakening the hydrogen interactions between the organic interlayer and [PbI6 ]4- octahedron is presented in this study. A highly matched heterointerface can be formed between the (002) facet of the 2D structure and the (100) crystal plane of the cubic α-FAPbI3 , thereby lowering the crystallization energy and inducing a heterogeneous nucleation of α-FAPbI3 . This "epitaxial growth" mechanism results form the highly preferred crystallographic orientation of the (100) facets, improved crystal quality and film uniformity, substantially increased charge transporting characteristics, and suppressed nonradiative recombination losses. An impressive power conversion efficiency (PCE) of 25.4% (certified 25.2%) is achieved using target PSCs, which demonstrates outstanding ambient and operational stability. The feasibility of this strategy is proved for the scalable deposition of homogeneous and high-quality perovskite thin films by demonstrating the remarkably increased PCE of the large-area perovskite solar module, from 18.2% to 20.1%.
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Affiliation(s)
- Yuanyuan Meng
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Yulong Wang
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, China
| | - Chang Liu
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Pengyu Yan
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Kexuan Sun
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Yaohua Wang
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Ruijia Tian
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Ruikun Cao
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Jintao Zhu
- Department of Chemical and Environmental Engineering, University of Nottingham Ningbo China, Ningbo, 315100, China
| | - Hainam Do
- Department of Chemical and Environmental Engineering, University of Nottingham Ningbo China, Ningbo, 315100, China
| | - Jianfeng Lu
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan, 430070, China
| | - Ziyi Ge
- Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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6
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Wang P, Wang D, Mondal S, Hu M, Wu Y, Ma T, Mi Z. Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18022-18031. [PMID: 36975150 DOI: 10.1021/acsami.2c22798] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth elements, e.g., scandium, has presented a pivotal step toward next-generation electronic, acoustic, photonic, and quantum devices and systems. To date, however, the conventional growth of single-crystalline nitride semiconductors often requires the use of sapphire, Si, or SiC substrate, which has prevented their integration with the workhorse complementary metal oxide semiconductor (CMOS) technology. Herein, we demonstrate single-crystalline ferroelectric nitride semiconductors grown on CMOS compatible metal-molybdenum. Significantly, we find that a unique epitaxial relationship between wurtzite and body-centered cubic crystal structure can be well maintained, enabling the realization of single-crystalline wurtzite ferroelectric nitride semiconductors on polycrystalline molybdenum that was not previously possible. Robust and wake-up-free ferroelectricity has been measured, for the first time, in the epitaxially grown ScAlN directly on metal. We further propose and demonstrate a ferroelectric GaN/ScAlN heterostructure for synaptic memristor, which shows the capability of emulating the spike-time-dependent plasticity in a biological synapse. This work provides a viable path for the integration of III-N architectures with the mature CMOS technology and sheds light on the promising applications of ferroelectric nitride memristors in neuromorphic computing.
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Affiliation(s)
- Ping Wang
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Ding Wang
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Shubham Mondal
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Mingtao Hu
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Yuanpeng Wu
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Tao Ma
- Michigan Center for Materials Characterization, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Zetian Mi
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, United States
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7
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Yin Y, Liu B, Chen Q, Chen Z, Ren F, Zhang S, Liu Z, Wang R, Liang M, Yan J, Sun J, Yi X, Wei T, Wang J, Li J, Liu Z, Gao P, Liu Z. Continuous Single-Crystalline GaN Film Grown on WS 2 -Glass Wafer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202529. [PMID: 35986697 DOI: 10.1002/smll.202202529] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/2022] [Revised: 07/07/2022] [Indexed: 06/15/2023]
Abstract
Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the epitaxy of single-crystalline GaN film on WS2 -glass wafer is successfully performed by using the strong polarity of WS2 buffer layer and its perfectly matching lattice geometry with GaN. Furthermore, this study reveals that the first interfacial nitrogen layer plays a crucial role in the well-constructed interface by sharing electrons with both Ga and S atoms, enabling the single-crystalline stress-free GaN, as well as a violet light-emitting diode. This study paves a way for the heterogeneous integration of semiconductors and creates opportunities to break through the design and performance limitations, which are induced by substrate restriction, of the devices.
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Affiliation(s)
- Yue Yin
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bingyao Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100095, China
| | - Qi Chen
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhaolong Chen
- Beijing Graphene Institute (BGI), Beijing, 100095, China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Fang Ren
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuo Zhang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhetong Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100095, China
| | - Rong Wang
- Beijing Graphene Institute (BGI), Beijing, 100095, China
| | - Meng Liang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jianchang Yan
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jingyu Sun
- Beijing Graphene Institute (BGI), Beijing, 100095, China
- College of Energy, Soochow Institute for Energy and Materials Innovations, Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, 215006, China
| | - Xiaoyan Yi
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tongbo Wei
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junxi Wang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinmin Li
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhongfan Liu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
- Beijing Graphene Institute (BGI), Beijing, 100095, China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Peng Gao
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Zhiqiang Liu
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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8
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Adhikari R, Faina B, Ney V, Vorhauer J, Sterrer A, Ney A, Bonanni A. Effect of Impurity Scattering on Percolation of Bosonic Islands and Superconductivity in Fe Implanted NbN Thin Films. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3105. [PMID: 36144891 PMCID: PMC9505447 DOI: 10.3390/nano12183105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2022] [Revised: 08/25/2022] [Accepted: 09/03/2022] [Indexed: 06/16/2023]
Abstract
A reentrant temperature dependence of the thermoresistivity ρxx(T) between an onset local superconducting ordering temperature Tloconset and a global superconducting transition at T=Tglooffset has been reported in disordered conventional 3-dimensional (3D) superconductors. The disorder of these superconductors is a result of either an extrinsic granularity due to grain boundaries, or of an intrinsic granularity ascribable to the electronic disorder originating from impurity dopants. Here, the effects of Fe doping on the electronic properties of sputtered NbN layers with a nominal thickness of 100 nm are studied by means of low-T/high-μ0H magnetotransport measurements. The doping of NbN is achieved via implantation of 35 keV Fe ions. In the as-grown NbN films, a local onset of superconductivity at Tloconset=15.72K is found, while the global superconducting ordering is achieved at Tglooffset=15.05K, with a normal state resistivity ρxx=22μΩ·cm. Moreover, upon Fe doping of NbN, ρxx=40μΩ·cm is estimated, while Tloconset and Tglooffset are measured to be 15.1 K and 13.5 K, respectively. In Fe:NbN, the intrinsic granularity leads to the emergence of a bosonic insulator state and the normal-metal-to-superconductor transition is accompanied by six different electronic phases characterized by a N-shaped T dependence of ρxx(T). The bosonic insulator state in a s-wave conventional superconductor doped with dilute magnetic impurities is predicted to represent a workbench for emergent phenomena, such as gapless superconductivity, triplet Cooper pairings and topological odd frequency superconductivity.
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Affiliation(s)
- Rajdeep Adhikari
- Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria
| | | | | | | | | | | | - Alberta Bonanni
- Institut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, Austria
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9
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Cai Q, You H, Hou Q, Tao T, Xie Z, Cao X, Liu B, Chen D, Lu H, Zhang R, Zheng Y. Self-Assembly Nanopillar/Superlattice Hierarchical Structure: Boosting AlGaN Crystalline Quality and Achieving High-Performance Ultraviolet Avalanche Photodetector. ACS APPLIED MATERIALS & INTERFACES 2022; 14:33525-33537. [PMID: 35830680 DOI: 10.1021/acsami.2c06417] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
As a burgeoning wide-band gap semiconductor material, AlxGa1-xN alloy has attracted great attention for versatile applications due to its superior properties. However, its poor crystalline quality has restricted the employment of AlGaN on electronic devices for a long time. Herein, we proposed a nanopillar/superlattice hierarchical structure for AlGaN epitaxy to boost the crystalline quality. The scale-controllable AlN nanopillar template is fabricated from a nickel self-assembly process. AlGaN initiates the epitaxial laterally overgrowth mode based on the nanopatterned template. In addition, the AlxGa1-xN/AlyGa1-yN superlattice structure could effectively block the propagation of threading dislocation segments. The kinetics of the dislocation and epitaxy process in the hierarchical structure is intuitively demonstrated and analyzed. Consequently, the dislocation density of AlGaN grown by this method is significantly reduced by more than 30 times compared to the AlN template. No threading dislocation segments were observed in the 4 μm TEM field of view. Moreover, based on the hierarchical structure, we also fabricated an AlGaN ultraviolet avalanche photodiode (APD). The APD exhibits superior performance, achieving a maximum gain of 1.3 × 105 and high responsivity of 1.46 A/W at 324 nm. The reliability of the nanopillar/superlattice AlGaN epitaxial procedure is anticipated to shed new light on the nitride semiconductor material, further bringing a breakthrough to wide-band gap electronic devices.
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Affiliation(s)
- Qing Cai
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Haifan You
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Qianyu Hou
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Tao Tao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Zili Xie
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Xun Cao
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Bin Liu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Dunjun Chen
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Hai Lu
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Rong Zhang
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
- Institute of Future Display Technology, Tan Kah Kee Innovation Laboratory, Xiamen 361102, China
| | - Youdou Zheng
- Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
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10
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Phan D, Senior J, Ghazaryan A, Hatefipour M, Strickland WM, Shabani J, Serbyn M, Higginbotham AP. Detecting Induced p±ip Pairing at the Al-InAs Interface with a Quantum Microwave Circuit. PHYSICAL REVIEW LETTERS 2022; 128:107701. [PMID: 35333085 DOI: 10.1103/physrevlett.128.107701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 12/15/2021] [Accepted: 01/31/2022] [Indexed: 06/14/2023]
Abstract
Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband p±ip pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.
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Affiliation(s)
- D Phan
- IST Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | - J Senior
- IST Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | - A Ghazaryan
- IST Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | - M Hatefipour
- Department of Physics, New York University, New York, New York 10003, USA
| | - W M Strickland
- Department of Physics, New York University, New York, New York 10003, USA
| | - J Shabani
- Department of Physics, New York University, New York, New York 10003, USA
| | - M Serbyn
- IST Austria, Am Campus 1, 3400 Klosterneuburg, Austria
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11
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Xu X, Smajic J, Li KH, Min JW, Lei Y, Davaasuren B, He X, Zhang X, Ooi BS, Costa PMFJ, Alshareef HN. Lattice Orientation Heredity in the Transformation of 2D Epitaxial Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2105190. [PMID: 34761821 DOI: 10.1002/adma.202105190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2021] [Revised: 10/30/2021] [Indexed: 06/13/2023]
Abstract
The ability to control lattice orientation is often an essential requirement in the growth of both 2D van der Waals (vdW) layered and nonlayered thin films. Here, a unique and universal phenomenon termed "lattice orientation heredity" (LOH) is reported. LOH enables product films (including 2D-layered materials) to inherit the lattice orientation from reactant films in a chemical conversion process, excluding the requirement on the substrate lattice order. The process universality is demonstrated by investigating the lattice transformations in the carbonization, nitridation, and sulfurization of epitaxial MoO2 , ZnO, and In2 O3 thin films. Their resultant compounds all inherit the mono-oriented crystal feature from their precursor oxides, including 2D vdW-layered semiconductors (e.g., MoS2 ), metallic films (e.g., MXene-like Mo2 C and MoN), wide-bandgap semiconductors (e.g., hexagonal ZnS), and ferroelectric semiconductors (e.g., In2 S3 ). Using LOH-grown MoN as a seeding layer, mono-oriented GaN is achieved on an amorphous quartz substrate. The LOH process presents a universal strategy capable of growing epitaxial thin films (including 2D vdW-layered materials) not only on single-crystalline but also on noncrystalline substrates.
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Affiliation(s)
- Xiangming Xu
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jasmin Smajic
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Kuang-Hui Li
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jung-Wook Min
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yongjiu Lei
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Bambar Davaasuren
- Core Laboratories, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xin He
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Boon S Ooi
- Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering (CEMSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Pedro M F J Costa
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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12
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Yu T, Wright J, Khalsa G, Pamuk B, Chang CS, Matveyev Y, Wang X, Schmitt T, Feng D, Muller DA, Xing HG, Jena D, Strocov VN. Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction. SCIENCE ADVANCES 2021; 7:eabi5833. [PMID: 34936435 PMCID: PMC8694612 DOI: 10.1126/sciadv.abi5833] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/21/2021] [Accepted: 11/05/2021] [Indexed: 06/14/2023]
Abstract
The electronic structure of heterointerfaces is a pivotal factor for their device functionality. We use soft x-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures on both sides of the Schottky heterointerface formed by epitaxial films of the superconducting NbN on semiconducting GaN, and determine their momentum-dependent interfacial band offset as well as the band-bending profile. We find, in particular, that the Fermi states in NbN are well separated in energy and momentum from the states in GaN, excluding any notable electronic cross-talk of the superconducting states in NbN to GaN. We support the experimental findings with first-principles calculations for bulk NbN and GaN. The Schottky barrier height obtained from photoemission is corroborated by electronic transport and optical measurements. The momentum-resolved understanding of electronic properties of interfaces elucidated in our work opens up new frontiers for the quantum materials where interfacial states play a defining role.
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Affiliation(s)
- Tianlun Yu
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - John Wright
- Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
| | - Guru Khalsa
- Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
| | - Betül Pamuk
- Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, NY 14853, USA
| | - Celesta S. Chang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
| | - Yury Matveyev
- Photon Science, Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22607 Hamburg, Germany
| | - Xiaoqiang Wang
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - Thorsten Schmitt
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - Donglai Feng
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
- Hefei National Laboratory for Physical Science at Microscale, CAS Center for Excellence in Quantum Information and Quantum Physics, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - David A. Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, USA
| | - Huili Grace Xing
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, USA
- Electrical and Computer Engineering and Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
| | - Debdeep Jena
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, USA
- Electrical and Computer Engineering and Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
| | - Vladimir N. Strocov
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
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13
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Talley KR, Perkins CL, Diercks DR, Brennecka GL, Zakutayev A. Synthesis of LaWN 3 nitride perovskite with polar symmetry. Science 2021; 374:1488-1491. [PMID: 34914511 DOI: 10.1126/science.abm3466] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
[Figure: see text].
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Affiliation(s)
- Kevin R Talley
- Materials Science Center, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, CO 80401, USA.,Department of Metallurgical and Materials Engineering, Colorado School of Mines, 1500 Illinois Street, Golden, CO 80401, USA
| | - Craig L Perkins
- Materials Science Center, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, CO 80401, USA
| | - David R Diercks
- Department of Metallurgical and Materials Engineering, Colorado School of Mines, 1500 Illinois Street, Golden, CO 80401, USA
| | - Geoff L Brennecka
- Department of Metallurgical and Materials Engineering, Colorado School of Mines, 1500 Illinois Street, Golden, CO 80401, USA
| | - Andriy Zakutayev
- Materials Science Center, National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, CO 80401, USA
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14
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Zhou S, Chen K, Cole MT, Li Z, Li M, Chen J, Lienau C, Li C, Dai Q. Ultrafast Electron Tunneling Devices-From Electric-Field Driven to Optical-Field Driven. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101449. [PMID: 34240495 DOI: 10.1002/adma.202101449] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2021] [Revised: 04/05/2021] [Indexed: 06/13/2023]
Abstract
The search for ever higher frequency information processing has become an area of intense research activity within the micro, nano, and optoelectronics communities. Compared to conventional semiconductor-based diffusive transport electron devices, electron tunneling devices provide significantly faster response times due to near-instantaneous tunneling that occurs at sub-femtosecond timescales. As a result, the enhanced performance of electron tunneling devices is demonstrated, time and again, to reimagine a wide variety of traditional electronic devices with a variety of new "lightwave electronics" emerging, each capable of reducing the electron transport channel transit time down to attosecond timescales. In response to unprecedented rapid progress within this field, here the current state-of-the-art in electron tunneling devices is reviewed, current challenges and opportunities are highlighted, and possible future research directions are identified.
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Affiliation(s)
- Shenghan Zhou
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Ke Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Matthew Thomas Cole
- Department of Electronic and Electrical Engineering, University of Bath, Bath, BA2 7AY, UK
| | - Zhenjun Li
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Mo Li
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Jun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Christoph Lienau
- Institut für Physik, Center of Interface Science, Carl von Ossietzky Universität, 26129, Oldenburg, Germany
| | - Chi Li
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qing Dai
- CAS Key Laboratory of Nanophotonic Materials and Devices, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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15
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Ren F, Liu B, Chen Z, Yin Y, Sun J, Zhang S, Jiang B, Liu B, Liu Z, Wang J, Liang M, Yuan G, Yan J, Wei T, Yi X, Wang J, Zhang Y, Li J, Gao P, Liu Z, Liu Z. Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer. SCIENCE ADVANCES 2021; 7:eabf5011. [PMID: 34330700 PMCID: PMC8324058 DOI: 10.1126/sciadv.abf5011] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2020] [Accepted: 06/15/2021] [Indexed: 05/21/2023]
Abstract
Van der Waals epitaxy provides a fertile playground for the monolithic integration of various materials for advanced electronics and optoelectronics. Here, a previously unidentified nanorod-assisted van der Waals epitaxy is developed and nearly single-crystalline GaN films are first grown on amorphous silica glass substrates using a graphene interfacial layer. The epitaxial GaN-based light-emitting diode structures, with a record internal quantum efficiency, can be readily lifted off, becoming large-size flexible devices. Without the effects of the potential field from a single-crystalline substrate, we expect this approach to be equally applicable for high-quality growth of nitrides on arbitrary substrates. Our work provides a revolutionary technology for the growth of high-quality semiconductors, thus enabling the hetero-integration of highly mismatched material systems.
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Affiliation(s)
- Fang Ren
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bingyao Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Zhaolong Chen
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Yue Yin
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jingyu Sun
- Beijing Graphene Institute (BGI), Beijing 100095, China
- College of Energy, Soochow Institute for Energy and Materials Innovations, Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou 215006, China
| | - Shuo Zhang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bei Jiang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Bingzhi Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
- College of Energy, Soochow Institute for Energy and Materials Innovations, Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou 215006, China
| | - Zhetong Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Jianwei Wang
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Meng Liang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guodong Yuan
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianchang Yan
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Tongbo Wei
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoyan Yi
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Junxi Wang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yong Zhang
- Department of Electrical and Computer Engineering, The University of North Carolina at Charlotte, Charlotte, NC 28223, USA
| | - Jinmin Li
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peng Gao
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Graphene Institute (BGI), Beijing 100095, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China.
- Beijing Graphene Institute (BGI), Beijing 100095, China
| | - Zhiqiang Liu
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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16
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Jiang K, Sun X, Shi Z, Zang H, Ben J, Deng HX, Li D. Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides. LIGHT, SCIENCE & APPLICATIONS 2021; 10:69. [PMID: 33790221 PMCID: PMC8012702 DOI: 10.1038/s41377-021-00503-y] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2021] [Revised: 02/21/2021] [Accepted: 02/25/2021] [Indexed: 05/22/2023]
Abstract
Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap, high breakdown field and energy density, excellent chemical and thermal stability. However, their application has been severely hindered by the low p-doping efficiency, which is ascribed to the ultrahigh acceptor activation energy originated from the low valance band maximum. Here, a valance band modulation mode is proposed and a quantum engineering doping method is conducted to achieve high-efficient p-type ultra-wide band-gap nitrides, in which GaN quantum-dots are buried in nitride matrix to produce a new band edge and thus to tune the dopant activation energy. By non-equilibrium doping techniques, quantum engineering doped AlGaN:Mg with Al content of 60% is successfully fabricated. The Mg activation energy has been reduced to about 21 meV, and the hole concentration reaches higher than 1018 cm-3 at room temperature. Also, similar activation energies are obtained in AlGaN with other Al contents such as 50% and 70%, indicating the universality of the quantum engineering doping method. Moreover, deep-ultraviolet light-emission diodes are fabricated and the improved performance further demonstrates the validity and merit of the method. With the quantum material growth techniques developing, this method would be prevalently available and tremendously stimulate the promotion of ultra-wide band-gap semiconductor-based devices.
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Affiliation(s)
- Ke Jiang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun, 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Yuquan Road No. 19, Beijing, 100049, China
| | - Xiaojuan Sun
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun, 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Yuquan Road No. 19, Beijing, 100049, China
| | - Zhiming Shi
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun, 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Yuquan Road No. 19, Beijing, 100049, China
| | - Hang Zang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun, 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Yuquan Road No. 19, Beijing, 100049, China
| | - Jianwei Ben
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun, 130033, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Yuquan Road No. 19, Beijing, 100049, China
| | - Hui-Xiong Deng
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Yuquan Road No. 19, Beijing, 100049, China.
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Qinghuadong Road No. 35, Beijing, 100083, China.
| | - Dabing Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Dongnanhu Road No. 3888, Changchun, 130033, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Yuquan Road No. 19, Beijing, 100049, China.
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17
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Lang AC, Katzer DS, Nepal N, Meyer DJ, Stroud RM. Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta 2N Thin Films. ACS APPLIED MATERIALS & INTERFACES 2021; 13:12575-12580. [PMID: 33667063 DOI: 10.1021/acsami.0c22244] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Epitaxial transition metal nitrides (TMNs) are an emerging class of crystalline thin film metals that can be heteroepitaxially integrated with common group III-nitride semiconductors such as GaN and AlN. Within a binary family of TMN compounds (i.e., TaxNy), several phases typically exist, many with similar crystal structures that are difficult to distinguish by conventional X-ray diffraction or other bulk characterization means. In this work, we demonstrate the combined power of high-resolution transmission and aberration-corrected scanning transmission electron microscopy for definitive phase identification of tantalum nitrides with different N-sublattice ordering. Analysis of molecular beam epitaxy-grown γ-Ta2N films on SiC substrates shows that the films are γ phase, threading dislocation-free, and Ta-deficient. The lack of Ta manifests as ordered Ta vacancy planar defects oriented in the plane perpendicular to the [0001] growth direction and accounts for the substoichiometry. Optimization of the growth parameters should reduce the Ta vacancy concentration, and alternatively, exploitation of the attractive nature of the Ta vacancies may enable novel planar structures. These findings serve as an important first step in applying this epitaxial TMN material for new electronic and superconducting device structures.
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Affiliation(s)
- Andrew C Lang
- American Society for Engineering Education Postdoctoral Fellow, U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - D Scott Katzer
- Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - Neeraj Nepal
- Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - David J Meyer
- Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
| | - Rhonda M Stroud
- Materials Science and Technology Division, U.S. Naval Research Laboratory, Washington, District of Columbia 20375, United States
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18
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Dang P, Khalsa G, Chang CS, Katzer DS, Nepal N, Downey BP, Wheeler VD, Suslov A, Xie A, Beam E, Cao Y, Lee C, Muller DA, Xing HG, Meyer DJ, Jena D. An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity. SCIENCE ADVANCES 2021; 7:7/8/eabf1388. [PMID: 33608281 PMCID: PMC7895435 DOI: 10.1126/sciadv.abf1388] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/12/2020] [Accepted: 01/06/2021] [Indexed: 06/12/2023]
Abstract
Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.
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Affiliation(s)
- Phillip Dang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA.
| | - Guru Khalsa
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA.
| | - Celesta S Chang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Department of Physics, Cornell University, Ithaca, NY 14853, USA
| | - D Scott Katzer
- United States Naval Research Laboratory, Washington, DC 20375, USA
| | - Neeraj Nepal
- United States Naval Research Laboratory, Washington, DC 20375, USA
| | - Brian P Downey
- United States Naval Research Laboratory, Washington, DC 20375, USA
| | | | - Alexey Suslov
- National High Magnetic Field Laboratory, Tallahassee, FL 32310, USA
| | - Andy Xie
- Qorvo, Richardson, TX 75080, USA
| | | | - Yu Cao
- Qorvo, Richardson, TX 75080, USA
| | | | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, USA
| | - Huili Grace Xing
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, USA
- School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA
| | - David J Meyer
- United States Naval Research Laboratory, Washington, DC 20375, USA
| | - Debdeep Jena
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA.
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, USA
- School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA
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19
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Lin B, Wei C, Wang A, Zou H, Zhang X, Sui T, Yan S. Dependency of the structure of a water layer sandwiched by silicon carbide on shear speed and temperature. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 33:095001. [PMID: 33246323 DOI: 10.1088/1361-648x/abce6d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
As a third-generation semiconductor, silicon carbide power devices are expected to be superior to those made of silicon because of their high voltage resistance, low loss, and high efficiency. So understanding the technology for polishing wafers of silicon carbide is important, which includes studying the structure of the liquid on the surface of silicon carbide. Using molecular dynamics based on Lennard-Jones field, the structure of a water film contained within two silicon carbide (〈001〉 and 〈110〉) walls was analyzed, and found that layers of water appear and change depending on the distance between the two walls. When a double-layer water structure forms, it is affected by the temperature and shear velocity. The conclusion is that when the temperature increases or the shear velocity increases, the double-layer water structure easily transforms into a single-layer water structure, and the pressure between the two solid surfaces gradually falls and may even become negative. This phenomenon significantly depends on the distance between the two silicon carbide walls.
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Affiliation(s)
- Bin Lin
- Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300350, People's Republic of China
| | - Chibin Wei
- Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300350, People's Republic of China
| | - Anying Wang
- Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300350, People's Republic of China
| | - Hongbo Zou
- Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300350, People's Republic of China
| | - Xiaofeng Zhang
- Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300350, People's Republic of China
| | - Tianyi Sui
- Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300350, People's Republic of China
| | - Shuai Yan
- Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300350, People's Republic of China
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20
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Ma C, Lin J, Yang G. Prediction of new thermodynamically stable ZnN 2O 3 at high pressure. Phys Chem Chem Phys 2020; 22:10941-10948. [PMID: 32374306 DOI: 10.1039/d0cp00813c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
Pressure has become a useful parameter to prepare novel functional materials. Considering the excellent performance of ZnO and Zn3N2 and the formation of strong Zn-O, Zn-N, and N-O bonds in the known compounds, we explored potential Zn-N-O ternary compounds with interesting properties. With the aid of first-principles swarm-intelligence search calculations, we identified a hitherto unknown ZnN2O3 ternary compound with a symmetry of P21. Its remarkable feature is that N pairs interconnect the distorted Zn-centered decahedrons, in which the Zn atom forms bonds with one N and six O atoms. The compression of ZnO + NO2 + N2 might be an easy way to synthesize ZnN2O3. Electronic property calculations disclose that ZnN2O3 is a wide band gap semiconductor with a gap value of 3.48 eV, which is larger than those of ZnO and Zn3N2. Moreover, the high-pressure phase diagram of Zn-N binary compounds was explored with a wide range of chemical compositions. Two metallic N-rich zinc nitrides (e.g., ZnN2 and ZnN4) are proposed, containing intriguing N2 dimers and zigzag N chains. ZnN2 exhibits superconducting properties, and becomes the first example of superconductor in zinc nitrides. Our current results unravel the unusual stoichiometry of Zn-N-O compounds and provide further insight into the diverse electronic properties of zinc nitrides under high pressure.
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Affiliation(s)
- Chunhong Ma
- Department of Chemistry, Jilin Normal University, Jilin 136000, China
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21
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Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics. Nat Commun 2020; 11:2314. [PMID: 32385280 PMCID: PMC7210958 DOI: 10.1038/s41467-020-15472-w] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/31/2019] [Accepted: 03/10/2020] [Indexed: 11/09/2022] Open
Abstract
Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface roughness in the composite transducer severely limits the phonon relaxation time in sputter-deposited devices. Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom electrode and a piezoelectric GaN film on a SiC substrate. The acoustic impedance-matched epi-HBAR has a power injection efficiency >99% from transducer to phonon cavity. The smooth interfaces and low defect density reduce phonon losses, yielding (f × Q) and phonon lifetimes up to 1.36 × 1017 Hz and 500 µs respectively. The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode phonon source that can be directly interfaced with NbN-based superconducting qubits or SiC-based spin qubits.
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22
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Poncé S, Jena D, Giustino F. Route to High Hole Mobility in GaN via Reversal of Crystal-Field Splitting. PHYSICAL REVIEW LETTERS 2019; 123:096602. [PMID: 31524479 DOI: 10.1103/physrevlett.123.096602] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2018] [Revised: 07/30/2019] [Indexed: 06/10/2023]
Abstract
A fundamental obstacle toward the realization of GaN p-channel transistors is its low hole mobility. Here we investigate the intrinsic phonon-limited mobility of electrons and holes in wurtzite GaN using the ab initio Boltzmann transport formalism, including all electron-phonon scattering processes and many-body quasiparticle band structures. We predict that the hole mobility can be increased by reversing the sign of the crystal-field splitting in such a way as to lift the split-off hole states above the light and heavy holes. We find that a 2% biaxial tensile strain can increase the hole mobility by 230%, up to a theoretical Hall mobility of 120 cm^{2}/V s at room temperature and 620 cm^{2}/V s at 100 K.
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Affiliation(s)
- Samuel Poncé
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Debdeep Jena
- School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
- Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
| | - Feliciano Giustino
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
- Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
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23
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Song ZY, Shang L, Hu Z, Chu J, Chen PP, Yamamoto A, Kang TT. InN superconducting phase transition. Sci Rep 2019; 9:12309. [PMID: 31444384 PMCID: PMC6707267 DOI: 10.1038/s41598-019-48783-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/20/2019] [Accepted: 07/25/2019] [Indexed: 11/08/2022] Open
Abstract
InN superconductivity is very special among III-V semiconductors, as other III-V semiconductors (such as GaAs, GaN, InP, InAs, etc.) usually lack strong covalent bonding and thus seldom show superconductivity at low temperatures. Here, we probe the different superconducting phase transitions in InN highlighted by its microstructure. Those chemical-unstable phase-separated inclusions, such as metallic indium or In2O3, are intentionally removed by HCl acid etching. The quasi-two-dimensional vortex liquid-glass transition is observed in the sample with a large InN grain size. In contrast, the superconducting properties of InN with a small grain size are sensitive to acid etching, showing a transition into a nonzero resistance state when the temperature approaches zero. Since the value of ξ0 (the zero-temperature-limit superconducting coherence length) is close to the grain size, it is suggested that individual InN grains and intergrain coupling should be responsible for the sample-dependent InN superconducting phase transition. Our work establishes a guideline for engineering superconductivity in III-nitride.
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Affiliation(s)
- Zhi-Yong Song
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200062, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, People's Republic of China
| | - Liyan Shang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200062, China
| | - Zhigao Hu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200062, China
| | - JunHao Chu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200062, China.
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, People's Republic of China.
| | - Ping-Ping Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, People's Republic of China
| | | | - Ting-Ting Kang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, People's Republic of China.
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24
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Bauers SR, Holder A, Sun W, Melamed CL, Woods-Robinson R, Mangum J, Perkins J, Tumas W, Gorman B, Tamboli A, Ceder G, Lany S, Zakutayev A. Ternary nitride semiconductors in the rocksalt crystal structure. Proc Natl Acad Sci U S A 2019; 116:14829-14834. [PMID: 31270238 PMCID: PMC6660719 DOI: 10.1073/pnas.1904926116] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optical and electronic devices. In contrast, rocksalt-structured nitrides are known for their superconducting and refractory properties. Breaking this dichotomy, here we report ternary nitride semiconductors with rocksalt crystal structures, remarkable electronic properties, and the general chemical formula Mgx TM 1-xN (TM = Ti, Zr, Hf, Nb). Our experiments show that these materials form over a broad metal composition range, and that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8 to 2.1 eV) and up to 100 cm2 V-1⋅s-1 electron mobility for MgZrN2 grown on MgO substrates. Complementary ab initio calculations reveal that these materials have disorder-tunable optical absorption, large dielectric constants, and electronic bandgaps that are relatively insensitive to disorder. These ternary Mgx TM 1-xN semiconductors are also structurally compatible both with binary TMN superconductors and main-group nitride semiconductors along certain crystallographic orientations. Overall, these results highlight Mgx TM 1-xN as a class of materials combining the semiconducting properties of main-group wurtzite nitrides and rocksalt structure of superconducting transition-metal nitrides.
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Affiliation(s)
- Sage R Bauers
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401;
| | - Aaron Holder
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
- Department of Chemical and Biological Engineering, University of Colorado, Boulder, Boulder, CO 80309
| | - Wenhao Sun
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
| | - Celeste L Melamed
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
- Department of Physics, Colorado School of Mines, Golden, CO 80401
| | - Rachel Woods-Robinson
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
- Applied Science and Technology Graduate Group, University of California, Berkeley, CA 94720
| | - John Mangum
- Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401
| | - John Perkins
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
| | - William Tumas
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
| | - Brian Gorman
- Department of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401
| | - Adele Tamboli
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
| | - Gerbrand Ceder
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
| | - Stephan Lany
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401
| | - Andriy Zakutayev
- Materials Science Center, National Renewable Energy Laboratory, Golden, CO 80401;
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25
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Substrate mediated nitridation of niobium into superconducting Nb 2N thin films for phase slip study. Sci Rep 2019; 9:8811. [PMID: 31217545 PMCID: PMC6584497 DOI: 10.1038/s41598-019-45338-1] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2019] [Accepted: 06/05/2019] [Indexed: 11/25/2022] Open
Abstract
Here we report a novel nitridation technique for transforming niobium into hexagonal Nb2N which appears to be superconducting below 1K. The nitridation is achieved by high temperature annealing of Nb films grown on Si3N4/Si (100) substrate under high vacuum. The structural characterization directs the formation of a majority Nb2N phase while the morphology shows granular nature of the films. The temperature dependent resistance measurements reveal a wide metal-to-superconductor transition featuring two distinct transition regions. The region close to the normal state varies strongly with the film thickness, whereas, the second region in the vicinity of the superconducting state remains almost unaltered but exhibiting resistive tailing. The current-voltage characteristics also display wide transition embedded with intermediate resistive states originated by phase slip lines. The transition width in current and the number of resistive steps depend on film thickness and they both increase with decrease in thickness. The broadening in transition width is explained by progressive establishment of superconductivity through proximity coupled superconducting nano-grains while finite size effects and quantum fluctuation may lead to the resistive tailing. Finally, by comparing with Nb control samples, we emphasize that Nb2N offers unconventional superconductivity with promises in the field of phase slip based device applications.
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26
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Tao ZY, Liu T, Zhang C, Fan YX. Acoustic extraordinary transmission manipulation based on proximity effects of heterojunctions. Sci Rep 2019; 9:1080. [PMID: 30705414 PMCID: PMC6355896 DOI: 10.1038/s41598-018-37724-y] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/17/2018] [Accepted: 12/12/2018] [Indexed: 12/03/2022] Open
Abstract
Heterojunctions between two crystalline semiconductor layers or regions can always lead to engineering the electronic energy bands in various devices, including transistors, solar cells, lasers, and organic electronic devices. The performance of these heterojunction devices depends crucially on the band alignments and their bending at the interfaces, which have been investigated for years according to Anderson's rule, Schottky-Mott rule, Lindhard theory, quantum capacitance, and so on. Here, we demonstrate that by engineering two different acoustic waveguides with forbidden bands, one can achieve an acoustic heterojunction with an extraordinary transmission peak arising in the middle of the former gaps. We experimentally reveal that such a transmission is spatially dependent and disappears for a special junction structure. The junction proximity effect has been realized by manipulating the acoustic impedance ratios, which have been proven to be related to the geometrical (Zak) phases of the bulk bands. Acoustic heterojunctions bring the concepts of quantum physics into the classical waves and the macroscopic scale, opening up the investigations of phononic, photonic, and microwave innovation devices.
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Affiliation(s)
- Zhi-Yong Tao
- Key Lab of In-fiber Integrated Optics, Ministry Education of China, Harbin Engineering University, Harbin, 150001, People's Republic of China.
- Academy of Marine Information Technology, Guilin University of Electronic Technology, Beihai, 536000, People's Republic of China.
- Physics Research Centre, College of Science, Harbin Engineering University, Harbin, 150001, People's Republic of China.
| | - Ting Liu
- Key Lab of In-fiber Integrated Optics, Ministry Education of China, Harbin Engineering University, Harbin, 150001, People's Republic of China
| | - Chuan Zhang
- Key Lab of In-fiber Integrated Optics, Ministry Education of China, Harbin Engineering University, Harbin, 150001, People's Republic of China
| | - Ya-Xian Fan
- Key Lab of In-fiber Integrated Optics, Ministry Education of China, Harbin Engineering University, Harbin, 150001, People's Republic of China.
- Academy of Marine Information Technology, Guilin University of Electronic Technology, Beihai, 536000, People's Republic of China.
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27
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Guo L, Wang Y, Kaya D, Palmer RE, Chen G, Guo Q. Orientational Epitaxy of van der Waals Molecular Heterostructures. NANO LETTERS 2018; 18:5257-5261. [PMID: 30001140 DOI: 10.1021/acs.nanolett.8b02238] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The shape of individual building blocks is an important parameter in bottom-up self-assembly of nanostructured materials. A simple shape change from sphere to spheroid can significantly affect the assembly process due to the modification to the orientational degrees of freedom. When a layer of spheres is placed upon a layer of spheroids, the strain at the interface can be minimized by the spheroid taking a special orientation. C70 fullerenes represent the smallest spheroids, and their interaction with a sphere-like C60 is investigated. We find that the orientation of the C70 within a close-packed C70 layer can be steered by contacting a layer of C60. This orientational steering phenomenon is potentially useful for epitaxial growth of multilayer van der Waals molecular heterostructures.
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Affiliation(s)
- Lu'an Guo
- Department of Applied Physics and Key Laboratory for Quantum Information and Quantum Optoelectronic Devices of Shaanxi Province , Xi'an Jiaotong University , Xi'an 710049 , China
- School of Physics and Astronomy , University of Birmingham , Edgbaston, Birmingham B15 2TT , U.K
| | - Yitao Wang
- School of Physics and Astronomy , University of Birmingham , Edgbaston, Birmingham B15 2TT , U.K
| | - Dogan Kaya
- Department of Electronics and Automation, Vocational School of Adana , Cukurova University , 01160 Cukurova , Adana , Turkey
| | - Richard E Palmer
- College of Engineering , Swansea University , Bay Campus, Fabian Way , Swansea SA1 8EN , U.K
| | - Guangde Chen
- Department of Applied Physics and Key Laboratory for Quantum Information and Quantum Optoelectronic Devices of Shaanxi Province , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Quanmin Guo
- School of Physics and Astronomy , University of Birmingham , Edgbaston, Birmingham B15 2TT , U.K
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28
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Transistors driven by superconductors. Nature 2018; 555:172-173. [DOI: 10.1038/d41586-018-02717-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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