Size-dependent phase transition in methylammonium lead iodide perovskite microplate crystals

Quantum-Confined Perovskite Nanocrystals Enabled by Negative Catalyst Strategy for Efficient Light-Emitting Diodes

The perovskite nanocrystals (PeNCs) are emerging as a promising emitter for light-emitting diodes (LEDs) due to their excellent optical and electrical properties. However, the ultrafast growth of PeNCs often results in large sizes exceeding the Bohr diameter, leading to low exciton binding energy and susceptibility to nonradiative recombination, while small-sized PeNCs exhibit a large specific surface area, contributing to an increased defect density. Herein, Zn2+ ions as a negative catalyst to realize quantum-confined FAPbBr3 PeNCs with high photoluminescence quantum yields (PL QY) over 90%. Zn2+ ions exhibit robust coordination with Br- ions is introduced, effectively retarding the participation of Br- ions in the perovskite crystallization process and thus facilitating PeNCs size control. Notably, Zn2+ ions neither incorporate into the perovskite lattice nor are absorbed on the surface of PeNCs. And the reduced growth rate also promotes sufficient octahedral coordination of PeNC that reduces defect density. The LEDs based on these optimized PeNCs exhibits an external quantum efficiency (EQE) of 21.7%, significantly surpassing that of the pristine PeNCs (15.2%). Furthermore, the device lifetime is also extended by twofold. This research presents a novel approach to achieving high-performance optoelectronic devices.

Scanning Probe Microscopy of Halide Perovskite Solar Cells

Scanning probe microscopy (SPM) has enabled significant new insights into the nanoscale and microscale properties of solar cell materials and underlying working principles of photovoltaic and optoelectronic technology. Various SPM modes, including atomic force microscopy, Kelvin probe force microscopy, conductive atomic force microscopy, piezoresponse force microscopy, and scanning near-field optical microscopy, can be used for the investigation of electrical, optical and chemical properties of associated functional materials. A large body of work has improved the understanding of solar cell device processing and synthesis in close synergy with SPM investigations in recent years. This review provides an overview of SPM measurement capabilities and attainable insight with a focus on recently widely investigated halide perovskite materials.

Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors

Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the first time, a hybrid heterojunction photodetector based on methylammonium lead bromide (MAPbBr3) polycrystalline film deposited on gallium arsenide (GaAs) was presented, along with comprehensive morphological, structural, optical, and photoelectrical investigations. The MAPbBr3/GaAs heterojunction photodetector exhibited wide spectral responsivity, from 540 to 900 nm. The fabrication steps of the prototype device, including a new preparation recipe for the MAPbBr3 solution and spinning, will be disclosed and discussed. It will be shown that extending the soaking time and refining the precursor solution's stoichiometry may enhance surface coverage, adhesion to the GaAs, and film uniformity, as well as provide a new way to integrate MAPbBr3 on GaAs. Compared to the pristine MAPbBr3, the enhanced structural purity of the perovskite on GaAs was confirmed by X-ray Diffraction (XRD) upon optimization compared to the conventional glass substrate. Scanning Electron Microscopy (SEM) revealed the formation of microcube-like structures on the top of an otherwise continuous MAPbBr3 polycrystalline film, with increased grain size and reduced grain boundary effects pointed by Energy-Dispersive Spectroscopy (EDS) and cathodoluminescence (CL). Enhanced absorption was demonstrated in the visible range and broadened photoluminescence (PL) emission at room temperature, with traces of reduction in the orthorhombic tilting revealed by temperature-dependent PL. A reduced average carrier lifetime was reduced to 13.8 ns, revealed by time-resolved PL (TRPL). The dark current was typically around 8.8 × 10-8 A. Broad photoresponsivity between 540 and 875 nm reached a maximum of 3 mA/W and 16 mA/W, corresponding to a detectivity of 6 × 1010 and 1 × 1011 Jones at -1 V and 50 V, respectively. In case of on/off measurements, the rise and fall times were 0.40 s and 0.61 s or 0.62 s and 0.89 s for illumination, with 500 nm or 875 nm photons, respectively. A long-term stability test at room temperature in air confirmed the optical and structural stability of the proposed hybrid structure. This work provides insights into the physical mechanisms of new hybrid junctions for high-performance photodetectors.

Highly Diffusive Nonluminescent Carriers in Hybrid Phase Lead Triiodide Perovskite Nanowires

Crystal structural rearrangements unavoidably introduce defects into materials, where even these small changes in local lattice structure could arouse a prominent impact on the overall nature of crystals. Contrary to the traditional notion that defects obstruct carrier transport, herein, we report a promoted transport mechanism of nonluminescent carriers in single-crystalline CH3NH3PbI3 nanowires (1345.2 cm2 V-1 s-1, about a 14-fold improvement), enabled by the phase transition induced defects (PTIDs). Carriers captured by PTIDs evade both the radiative and non-radiative recombinations during the incomplete tetragonal-to-orthorhombic phase transition at low temperatures, forming a specific nonluminescent state that exhibits an efficient long-distance transport and thereby realize a prominent enhancement of photocurrent responsivity for photodetector applications. The findings provide broader insights into the carrier transport mechanism in perovskite semiconductors and have significant implications for their rational design for photoelectronic applications at varied operating temperatures.

Multidimensional Deep Ultraviolet (DUV) Synapses Based on Organic/Perovskite Semiconductor Heterojunction Transistors for Antispoofing Facial Recognition Systems

Reliably discerning real human faces from fake ones, known as antispoofing, is crucial for facial recognition systems. While neuromorphic systems offer integrated sensing-memory-processing functions, they still struggle with efficient antispoofing techniques. Here we introduce a neuromorphic facial recognition system incorporating multidimensional deep ultraviolet (DUV) optoelectronic synapses to address these challenges. To overcome the complexity and high cost of producing DUV synapses using traditional wide-bandgap semiconductors, we developed a low-temperature (≤70 °C) solution process for fabricating DUV synapses based on PEA2PbBr4/C8-BTBT heterojunction field-effect transistors. This method enables the large-scale (4-in.), uniform, and transparent production of DUV synapses. These devices respond to both DUV and visible light, showing multidimensional features. Leveraging the unique ability of the multidimensional DUV synapse (MDUVS) to discriminate real human skin from artificial materials, we have achieved robust neuromorphic facial recognition with antispoofing capability, successfully identifying genuine human faces with an accuracy exceeding 92%.

Ultrapure Green High Photoluminescence Quantum Yield from FAPbBr3 Nanocrystals Embedded in Transparent Porous Films

Achieving highly transparent and emissive films based on perovskite quantum dots (PQDs) is a challenging task since their photoluminescence quantum yield (PLQY) typically drops abruptly when they are used as building blocks to make a solid. In this work, we obtain highly transparent films containing FAPbBr₃ quantum dots that display a narrow green emission (λ = 530 nm, full width at half-maximum (FWHM) = 23 nm) with a PLQY as high as 86%. The method employed makes use of porous matrices that act as arrays of nanoreactors to synthesize the targeted quantum dots within their void space, providing both a means to keep them dispersed and a protective environment. Further infiltration with poly(methyl methacrylate) (PMMA) increases the mechanical and chemical stability of the ensemble and serves to passivate surface defects, boosting the emission of the embedded PQD and significantly reducing the width of the emission peak, which fulfills the requirements established by the Commission Internationale de l'Éclairage (CIE) to be considered an ultrapure green emitter. The versatility of this approach is demonstrated by fabricating a color-converting layer that can be easily transferred onto a light-emitting device surface to modify the spectral properties of the outgoing radiation.

Bandgap Pressure Coefficient of a CH3NH3PbI3 Thin Film Perovskite

Recent scientific interest in examining the bandgap evolution of a MAPbI₃ hybrid perovskite by applying hydrostatic pressure has mostly focused on a room-temperature tetragonal phase. In contrast, the pressure response of a low-temperature orthorhombic phase (OP) of MAPbI₃ has not been explored and understood. In this research, we investigate for the first time how hydrostatic pressure alters the electronic landscape of the OP of MAPbI₃. Pressure studies using photoluminescence combined with calculations within density functional theory at zero temperature allowed us to identify the main physical factors affecting the bandgap evolution of the OP of MAPbI₃. The negative bandgap pressure coefficient was found to be strongly dependent on the temperature (α_120K = -13.3 ± 0.1 meV/GPa, α_80K = -29.8 ± 0.1 meV/GPa, and α_40K = -36.3 ± 0.1 meV/GPa). Such dependence is related to the changes in the Pb-I bond length and geometry in the unit cell as the atomic configuration approaches the phase transition as well as the increasing phonon contribution to octahedral tilting as the temperature increases.

Ferroelectricity in Hybrid Perovskites

Ferroelectric ceramics such as PbZr_xTi_1-xO₃ (PZT) are widely applied in many fields, from medical to aerospace, because of their dielectric, piezoelectric, and pyroelectric properties. In the past few years, hybrid organic-inorganic halide perovskites have gradually attracted attention for their optical and electronic properties, including ferroelectricity, and for their low fabrication costs. In this Review, we first describe techniques that are used to quantify ferroelectric figures of merit of a material. We then discuss ferroelectricity in hybrid perovskites, starting from controversies in methylammonium iodoplumbate perovskites and then focusing on low-dimensional perovskites that offer an unambiguous platform to obtain ferroelectricity. Finally, we provide examples of the application of perovskite ferroelectrics in solar cells, LEDs, and X-ray detectors. We conclude that the vast structure-property tunability makes low-dimensional hybrid perovskites promising, but they have yet to offer ferroelectric figures of merit (e.g., saturated polarization) and thermal stability (e.g., Curie temperature) competitive with those of conventional oxide perovskite ferroelectric materials.

Direct Observation of Size-Dependent Phase Transition in Methylammonium Lead Bromide Perovskite Microcrystals and Nanocrystals

Methylammonium (MA) lead halide perovskites have been widely studied as active materials for advanced optoelectronics. As crystalline semiconductor materials, their properties are strongly affected by their crystal structure. Depending on their applications, the size of MA lead halide perovskite crystals varies by several orders of magnitude. The particle size can lead to different structural phase transitions and optoelectronic properties. Herein, we investigate the size effect for phase transition of MA lead bromide (MAPbBr₃) by comparing the temperature-dependent neutron powder diffraction patterns of microcrystals and nanocrystals. The orthorhombic-to-tetragonal phase transition occurs in MAPbBr₃ microcrystals within the temperature range from 100 to 310 K. However, the phase transition is absent in nanocrystals in this temperature range. In this work, we offer a persuasive and direct evidence of the relationship between the particle size and the phase transition in perovskite crystals.

Sn-Based Perovskite Halides for Electronic Devices

Because of its less toxicity and electronic structure analogous to that of lead, tin halide perovskite (THP) is currently one of the most favorable candidates as an active layer for optoelectronic and electric devices such as solar cells, photodiodes, and field-effect transistors (FETs). Promising photovoltaics and FETs performances have been recently demonstrated because of their desirable electrical and optical properties. Nevertheless, THP's easy oxidation from Sn2+ to Sn4+ , easy formation of tin vacancy, uncontrollable film morphology and crystallinity, and interface instability severely impede its widespread application. This review paper aims to provide a basic understanding of THP as a semiconductor by highlighting the physical structure, energy band structure, electrical properties, and doping mechanisms. Additionally, the key chemical instability issues of THPs are discussed, which are identified as the potential bottleneck for further device development. Based on the understanding of the THPs properties, the key recent progress of THP-based solar cells and FETs is briefly discussed. To conclude, current challenges and perspective opportunities are highlighted.

Liquid-Phase van der Waals Epitaxy of a Few-Layer and Unit-Cell Thick Ruddlesden-Popper Halide Perovskite

2D Ruddlesden-Popper (RP) halide perovskites with natural multiple quantum well structures are an ideal platform to integrate into vertical heterostructures, which may introduce plentiful intriguing optoelectronic properties that are not accessible in a single bulk crystal. Here, we report liquid-phase van der Waals epitaxy of a 2D RP hybrid perovskite (4,4-DFPD)₂PbI₄ (4,4-DFPD is 4,4-difluoropiperidinium) on muscovite mica and fabricate a series of perovskite-perovskite vertical heterostructures by integrating it with a second 2D RP perovskite R-NPB [NPB = 1-(1-naphthyl)ethylammonium lead bromide] sheets. The grown (4,4-DFPD)₂PbI₄ nanobelt array can be multiple layers to unit-cell thin and are crystallographically aligned on the mica substrate. An interlayer photo emission in this R-NPB/(4,4-DFPD)₂PbI₄ heterostructure with a lifetime of about 25 ns at 120 K has been revealed. Our demonstration of epitaxial (4,4-DFPD)₂PbI₄ array grown on mica via liquid-phase van der Waals epitaxy provides a paradigm to prepare orderly distributed 2D RP hybrid perovskites for further integration into multiple heterostructures. The discovery of a new interlayer emission in the R-NPB/(4,4-DFPD)₂PbI₄ heterostructure enriches the basic understanding of interlayer charge transition in halide perovskite systems.

A high-performance polarization-sensitive and stable self-powered UV photodetector based on a dendritic crystal lead-free metal-halide CsCu2I3/GaN heterostructure

Polarization-sensitive photodetectors are the core of optics applications and have been successfully demonstrated in photodetectors based on the newly-emerging metal-halide perovskites. However, achieving high polarization sensitivity is still extremely challenging. In addition, most of the previously reported photodetectors were concentrated on 1D lead-halide perovskites and 2D asymmetric intrinsic structure materials, but suffered from being external bias driven, lead-toxicity, poor stability and complex processes, severely limiting their practical applications. Here, we demonstrate a high-performance polarization-sensitive and stable polarization-sensitive UV photodetector based on a dendritic crystal lead-free metal-halide CsCu₂I₃/GaN heterostructure. By combining the anisotropic morphology and asymmetric intrinsic structure of CsCu₂I₃ dendrites with the isotropic material GaN film, a high specific surface area and built-in electric field are achieved, exhibiting an ultra-high polarization selectivity up to 28.7 and 102.8 under self-driving mode and -3 V bias, respectively. To our knowledge, such a high polarization selectivity has exceeded those of all of the reported perovskite-based devices, and is comparable to, or even superior to, those of the conventional 2D heterostructure materials. Interestingly, the unsealed device shows outstanding stability, and can be stored for over 2 months, and effectively maintained the performance even after repeated heating (373K)-cooling (300K) for different periods of time in ambient air, indicating a remarkable temperature tolerance and desired compatibility for applications under harsh conditions. Such excellent performance and simple method strongly show that the CsCu₂I₃/GaN heterojunction photodetector has great potential in practical applications with high polarization-sensitivity. This work provides a new insight into designing novel high-performance polarization-sensitive optoelectronic devices.

Exciton-Phonon Coupling and Low Energy Emission in 2D and Quasi-2D BA2MAn-1PbnI3n+1 Thin Films with Improved Phase Purity

Phonon scattering with photogenerated excitons and free charges greatly affects optoelectronic properties of metal halide perovskites and governs their emission line width. Benefiting from the improved phase purity, we are able to analyze exciton-phonon coupling in 2D and quasi-2D BA₂MA_n-1Pb_nI_3n+1 (n = 1-3) thin films using temperature-dependent photoluminescence (PL) spectroscopy. The layer thickness (n value) dependent coupling of free excitons with both acoustic and longitudinal optical (LO) phonons was extracted quantitatively by fitting the temperature-dependent PL line width and band gap. The low energy emissive signatures below free excitons at low temperature might belong to the emission of self-trapped excitons and bounded excitons in structural defects. Our findings provide a systematic picture for the layer thickness (n value) dependent exciton-phonon coupling in 2D and quasi-2D perovskite thin films and could be helpful for improving the optoelectronic performance of devices made by Ruddlesden-Popper perovskite thin films.

Quasi-Type II Core-Shell Perovskite Nanocrystals for Improved Structural Stability and Optical Gain

In recent years, core-shell lead halide perovskite nanocrystals (PeNCs) and their devices have attracted intensive attention owing to nearly perfect optoelectronic properties. However, the complex photophysical mechanism among them is still unclear. Herein, monodispersed core-shell PeNCs coated with an all-inorganic cesium lead bromide (CsPbBr₃) shell epitaxially grown on the surface of formamidinium lead bromide (FAPbBr₃) PeNCs were synthesized. Through power- and temperature-dependent photoluminescence (PL) measurements, it is found that the electronic structure of the core-shell FAPbBr₃/CsPbBr₃ PeNCs has a quasi-type II band alignment. The presence of Cs⁺ in the shell limits ion migration and helps to stabilize structural and optical properties. On this basis, after being exposed to pulsed nanosecond laser for a period, an amplified spontaneous emission (ASE) can be observed, which is attributed to the effective passivation induced by laser irradiation on defects at the interface. The ASE threshold of the core-shell PeNCs showing high structural and optical stability is 447 nJ/cm² under pulsed nanosecond optical pumping. The results that are demonstrated here provide a new idea and perspective for improving the stability of perovskite and can be of practical interest for the utilization of the core-shell PeNCs in optoelectronic devices.

Edge Raman enhancement at layered PbI2platelets induced by laser waveguide effect

As a two-dimensional (2D) layered semiconductor, lead iodide (PbI₂) has been widely used in optoelectronics owing to its unique crystal structure and distinctive optical and electrical properties. A comprehensive understanding of its optical performance is essential for further application and progress. Here, we synthesized regularly shaped PbI₂platelets using the chemical vapor deposition method. Raman scattering spectroscopy of PbI₂platelets was predominantly enhanced when the laser radiated at the edge according to Raman mapping spectroscopy. Combining the outcome of polarized Raman scattering spectroscopy and finite-difference time domain simulation analysis, the Raman enhancement was proven to be the consequence of the enhancement effects inherent to the high refractive index contrast waveguide, which is naturally formed in well-defined PbI₂platelets. Because of the enlarged excited area determined by the increased propagation length of the laser in the PbI₂platelet formed waveguide, the total Raman enhancements are acquired rather than a localized point enhancement. Finally, the Raman enhancement factor is directly related to the thickness of the PbI₂platelet, which further confirms the waveguide-enhanced edge Raman. Our investigation of the optical properties of PbI₂platelets offers reference for potential 2D layered-related optoelectronic applications.

Solution Epitaxy of Halide Perovskite Thin Single Crystals for Stable Transistors

Halide perovskites hold promise for energy and optoelectronic applications due to their fascinating photophysical properties and facile processing. Among various forms, epitaxial thin single crystals (TSCs) are highly desirable due to their high crystallinity, reduced defects, and easy epitaxial integration with other materials. However, a cost-effective method for obtaining TSCs with perfect epitaxial features remains elusive. Here, we demonstrate a direct epitaxial growth of high-quality all-inorganic perovskite CsPbBr₃ TSCs on various substrates through a facile solution process under near-ambient conditions. Structural characterizations reveal a high-quality epitaxy between the obtained perovskite TSCs and substrates, thus leading to efficiently reduced defects. The resultant TSCs display a low trap density (∼10¹¹ cm^-3) and a long carrier lifetime (∼10.16 ns). Top-gate/top-contact transistors based on these TSCs exhibit high on/off ratios of over 10⁵, an optimal hole mobility of 3.9 cm² V^-1 s^-1, almost hysteresis-free operation, and high stability at room temperature. Such a facile approach for the high-yield production of perovskite epitaxial TSCs will enable a broad range of high-performance electronic applications.

Halide Perovskites: A New Era of Solution-Processed Electronics

Organic-inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light-emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up-to-date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite-based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite-based electronics as a competitive and feasible technology are highlighted.

Impact of Crystal Size and Morphology on Switchability Characteristics in Pillared-Layer Metal-Organic Framework DUT-8(Ni)

Variation of the crystallite size in flexible porous coordination polymers can significantly influence or even drastically change the flexibility characteristics. The impact of crystal morphology, however, on the dynamic properties of flexible metal-organic frameworks (MOFs) is poorly investigated so far. In the present work, we systematically modulated the particle size of a model gate pressure MOF (DUT-8(Ni), Ni2(2,6-ndc)2(dabco), 2,6-ndc-2,6-naphthalenedicarboxylate, dabco-1,4-diazabicyclo[2.2.2]octane) and investigated the influence of the aspect ratio, length, and width of anisotropically shaped crystals on the gate opening characteristics. DUT-8 is a member of the pillared-layer MOF family, showing reversible structural transition, i.e., upon nitrogen physisorption at 77 K. The framework crystalizes as rod-like shaped crystals in conventional synthesis. To understand which particular crystal surfaces dominate the phenomena observed, crystals similar in size and differing in morphology were involved in a systematic study. The analysis of the data shows that the width of the rods (corresponding to the crystallographic directions along the layer) represents a critical parameter governing the dynamic properties upon adsorption of nitrogen at 77 K. This observation is related to the anisotropy of the channel-like pore system and the nucleation mechanism of the solid-solid phase transition triggered by gas adsorption.

Wide-Band-Gap Mixed-Halide 3D Perovskites: Electronic Structure and Halide Segregation Investigation

Mixed-halide organolead perovskites (MAPbX 3 ) are of great interest for both single-junction and tandem solar cells because of their wide band gap. In this study, we investigate the family of mixed iodide/bromide (I/Br) and bromide/chloride (Br/Cl) perovskites, revealing the strong influence of halide substitution on electronic properties, morphology, film composition, and phase segregation. A qualitative blue shift with the I → Br → Cl series was observed, with the resulting optical absorption ranging from 420 to 800 nm covering nearly the entire visible region. The ionization potential increases from ≈6.0 to ≈7.0 eV as the halide composition changes from I to Br. However, with Cl components, the valence band position shows little variation, while the conduction band minimum shifts to a lower value with increasing Cl concentration. By collecting XPS spectra as a function of the sputtering depth, we observed halide segregation in both I/Br and Br/Cl mixed-halide perovskite films, where the large halide ion (I in the I/Br mix or Br in the Br/Cl mix) is preferentially found on the surface of the film and the smaller halide ion (Br in the I/Br mix or Cl in the Br/Cl mix) accumulates at the bottom of the film. These differences in the band structure, electronic properties, morphology, and film composition impacted the device performance: a decreased short-circuit current density and increased open-circuit voltage were observed with the I → Br → Cl series. This study highlights the role of halides in the band structure and phase segregation in mixed-halide perovskite solar cells and provides a foundational framework for future optoelectronic applications of these materials.

Common Phase and Structure Misidentifications in High-Resolution TEM Characterization of Perovskite Materials

High-resolution TEM (HRTEM) is a powerful tool for structure characterization. However, methylammonium lead iodide (MAPbI3) perovskite is highly sensitive to electron beams and easily decomposes into lead iodide (PbI2). Misidentifications, such as PbI2 being incorrectly labeled as perovskite, are widely present in HRTEM characterization and would negatively affect the development of perovskite research field. Here misidentifications in MAPbI3 perovskite are summarized, classified, and corrected based on low-dose imaging and electron diffraction (ED) simulations. Corresponding crystallographic parameters of intrinsic tetragonal MAPbI3 and the confusable hexagonal PbI2 are presented unambiguously. Finally, the method of proper phase identification and some strategies to control the radiation damage in HRTEM are provided. This warning paves the way to avoid future misinterpretations in HRTEM characterization of perovskite and other electron beam-sensitive materials.

Methylation Design Strategy to Trigger a Dual Dielectric Switch and Improve the Phase Transition Temperature

Phase transitions of hybrid materials have aroused widespread concern and call for an in-depth study on its structure design, because the structure and characteristics are closely related, which promote potential applications in the field of temperature sensors, dielectric switches, and actuators. However, designing materials with multiple phase transitions and a high phase transition temperature (Tr) remains a huge challenge. In order to deal with this key hurdle, we tried to regulate the structural components and successfully synthesized [MASD]₂[CdCl₄] (1, MASD = 8-methyl-5-azoniaspiro[4,5]decane), which displays multiple phase transitions occurring at 273.8 K and 395.9 K separately. The Tr has significantly increased compared with the parent compounds reported previously. As the temperature sensitivity of compound 1 is constant at different frequencies, it can be applied for detectors or sensors under frequency-independent or wide frequency conditions. Moreover, methylation design strategy evidently triggered the dual dielectric switch and improved the Tr, which opens a new path for finding and adjusting ideal materials of multiple phase transition.

Electron tunneling at the molecularly thin 2D perovskite and graphene van der Waals interface

Quasi-two-dimensional perovskites have emerged as a new material platform for optoelectronics on account of its intrinsic stability. A major bottleneck to device performance is the high charge injection barrier caused by organic molecular layers on its basal plane, thus the best performing device currently relies on edge contact. Herein, by leveraging on van der Waals coupling and energy level matching between two-dimensional Ruddlesden-Popper perovskite and graphene, we show that the plane-contacted perovskite and graphene interface presents a lower barrier than gold for charge injection. Electron tunneling across the interface occurs via a gate-tunable, direct tunneling-to-field emission mechanism with increasing bias, and photoinduced charge transfer occurs at femtosecond timescale (~50 fs). Field effect transistors fabricated on molecularly thin Ruddlesden-Popper perovskite using graphene contact exhibit electron mobilities ranging from 0.1 to 0.018 cm²V⁻¹s⁻¹ between 1.7 to 200 K. Scanning tunneling spectroscopy studies reveal layer-dependent tunneling barrier and domain size on few-layered Ruddlesden-Popper perovskite.

Insulating molecular layers on the basal plane of 2D perovskite is a major bottleneck for charge injection that limiting device performance. Here, the authors show that plane-contacted graphene functions as a low barrier and gate-tunable contact to overcome this limitation.

Perovskite Core-Shell Nanowire Transistors: Interfacial Transfer Doping and Surface Passivation

While halide perovskite electronics are rapidly developing, they are greatly limited by the inferior charge transport and poor stability. In this work, effective surface charge transfer doping of vapor-liquid-solid (VLS)-grown single-crystalline cesium lead bromide perovskite (CsPbBr₃) nanowires (NWs) via molybdenum trioxide (MoO₃) surface functionalization is achieved. Once fabricated into NW devices, due to the efficient interfacial charge transfer and reduced impurity scattering, a 15× increase in the field-effect hole mobility (μ_h) from 1.5 to 23.3 cm²/(V s) is accomplished after depositing the 10 nm thick MoO₃ shell. This enhanced mobility is already better than any mobility value reported for perovskite field-effect transistors (FETs) to date. The photodetection performance of these CsPbBr₃/MoO₃ core-shell NWs is also investigated to yield a superior responsivity (R) up to 2.36 × 10³ A/W and an external quantum efficiency (EQE) of over 5.48 × 10⁵% toward the 532 nm regime. Importantly, the MoO₃ shell can provide excellent surface passivation to the CsPbBr₃ NW core that minimizes the diffusion of detrimental water and oxygen molecules, improving the air stability of CsPbBr₃/MoO₃ core-shell NW devices. All these findings evidently demonstrate the surface doping as an enabling technology to realize high-mobility and air-stable low-dimensional halide perovskite devices.

Transmission electron microscopy of organic-inorganic hybrid perovskites: myths and truths

Organic-inorganic hybrid perovskites (OIHPs) have attracted extensive research interest as a promising candidate for efficient and inexpensive solar cells. Transmission electron microscopy (TEM) characterizations that can benefit the fundamental understanding and the degradation mechanism are widely used for these materials. However, their sensitivity to the electron beam illumination and hence structural instabilities usually prevent us from obtaining the intrinsic information or even lead to significant artifacts. Here, we systematically investigate the structural degradation behaviors under different experimental factors to reveal the optimized conditions for TEM characterizations of OIHPs by using low-dose electron diffraction and imaging techniques. We find that a low temperature (-180 °C) does not slow down the beam damage but instead induces a rapid amorphization for OIHPs. Moreover, a less severe damage is observed at a higher accelerating voltage. The beam-sensitivity is found to be facet-dependent that a (1 0 0) exposed CH₃NH₃PbI₃ (MAPbI₃) surface is more stable than a (0 0 1) surface. With these guidance, we successfully acquire the atomic structure of pristine MAPbI₃ and identify the characterization window that is very narrow. These findings are helpful to guide future electron microscopy characterizations of these beam-sensitive materials, which are also useful for finding strategies to improve the stability and performance of the perovskite solar cells.

Thickness-dependent Young's modulus of polycrystalline α-PbO nanosheets

Litharge, in two dimensional (2D) nanostructure form, has recently ignited considerable theoretical interest due to its excellent photoelectric and magnetic properties. However, the lack of an efficient synthesis method hinders its development. Here, we provide an interfacial solvothermal strategy for controllably synthesizing ultrathin hexagonal polycrystalline α-PbO nanosheets in micrometer scale. This strategy can also be utilized for the synthesis of other 2D materials. Experimental atomic force microscope nanoindentation measurements reveal the relationship between the thickness of polycrystalline α-PbO nanosheets and the corresponding Young's modulus, expressed as E = E₀ + Kt ^-1. First-principles calculation supports the result and ascribes the cause to interlayer sliding from particular weak interlayer interactions. Additionally, the enhanced mechanical strength of the polycrystalline structure compared to its single-crystal counterpart is attributed to the alternate arrangement of grain-boundaries effects. The summative formula may be extended to other 2D materials with weak interlayer interactions, which has the potential to provide guidance for constructing flexible devices.

Halide perovskite nanocrystal arrays: Multiplexed synthesis and size-dependent emission

Halide perovskites have exceptional optoelectronic properties, but a poor understanding of the relationship between crystal dimensions, composition, and properties limits their use in integrated devices. We report a new multiplexed cantilever-free scanning probe method for synthesizing compositionally diverse and size-controlled halide perovskite nanocrystals spanning square centimeter areas. Single-particle photoluminescence studies reveal multiple independent emission modes due to defect-defined band edges with relative intensities that depend on crystal size at a fixed composition. Smaller particles, but ones with dimensions that exceed the quantum confinement regime, exhibit blue-shifted emission due to reabsorption of higher-energy modes. Six different halide perovskites have been synthesized, including a layered Ruddlesden-Popper phase, and the method has been used to prepare functional solar cells based on single nanocrystals. The ability to pattern arrays of multicolor light-emitting nanocrystals opens avenues toward the development of optoelectronic devices, including optical displays.

Recent Progress in Engineering Metal Halide Perovskites for Efficient Visible-Light-Driven Photocatalysis

Artificial photosynthesis has attracted increasing attention due to recent environmental and energy concerns. Metal halide perovskites (MHPs) demonstrating excellent optoelectronic properties have currently emerged as novel and efficient photocatalytic materials. Herein, the structural features of MHPs that are responsible for the photoinduced charge separation and charge migration properties are briefly introduced, and then important and necessary photophysical and photochemical aspects of MHPs related to photoredox catalysis are summarized. Subsequently, the applications of MHPs for solar energy harvesting and photocatalytic conversion, including H₂ evolution, CO₂ reduction, degradation of organic pollutants, and photoredox organic synthesis, are extensively demonstrated, with a focus on strategies for improving the performance (e.g., selectivity, activity, stability, recyclability, and environmental compatibility) of these MHP-based photocatalytic systems. To conclude, existing challenges and prospects on the future development of MHP-based materials towards photoredox catalysis applications are detailed.

Efficient All-Inorganic Perovskite Light-Emitting Diodes with Improved Operation Stability

Stability is becoming a main issue for perovskite light-emitting diodes (PeLEDs), as their external quantum efficiency (EQE) has been boosted to above 20%. An all-inorganic perovskite, cesium lead iodide (CsPbI₃), has better stability than organic-inorganic hybrid perovskites but suffers from a transition to yellow δ-CsPbI₃ phase at room temperature. Herein, we report stabilization of the α-CsPbI₃ phase by in situ formation of perovskite nanocrystals (NCs). By incorporation of a proper ratio of bulky organoammonium halides, 4-fluoro-phenylmethylammonium iodide (4-F-PMAI), stable α-CsPbI₃ films with nanometer-sized crystals can be obtained using a one-step spin-coating approach. The PeLEDs using α-CsPbI₃ NC films as emitters show a pure red emission at 692 nm and a high EQE of 14.8%. The EQE is further boosted to 18.6% using CsPbI_2.8Br_0.2 as the emissive layer. Furthermore, the PeLEDs show a very decent half-lifetime of over 1200 min and a shelf stability of over 2 months, much longer than that of hybrid PeLEDs.

A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation

Organo-metal halide perovskite field-effect transistors present serious challenges in terms of device stability and hysteresis in the current-voltage characteristics. Migration of ions located at grain boundaries and surface defects in the perovskite film are the main reasons for instability and hysteresis issues. Here, we introduce a perovskite grain molecular cross-linking approach combined with amine-based surface passivation to address these issues. Molecular cross-linking was achieved through hydrogen bond interactions between perovskite halogens and dangling bonds present at grain boundaries and a hydrophobic cross-linker, namely diethyl-(12-phosphonododecyl)phosphonate, added to the precursor solution. With our approach, we obtained smooth and compact perovskite layers composed of tightly bound grains hence significantly suppressing the generation and migration of ions. Moreover, we achieved efficient surface passivation of the perovskite films upon surface treatment with an amine-bearing polymer, namely polyethylenimine ethoxylated. With our synergistic grain and surface passivation approach, we were able to demonstrate the first perovskite transistor with a complete lack of hysteresis and unprecedented stability upon continuous operation under ambient conditions. Added to the merits are its ambipolar transport of opposite carriers with balanced hole and electron mobilities of 4.02 and 3.35 cm² V^-1 s^-1, respectively, its high I_on/I_off ratio >10⁴ and the lowest sub-threshold swing of 267 mV dec^-1 reported to date for any perovskite transistor. These remarkable achievements obtained through a cost-effective molecular cross-linking of grains combined with amine-based surface passivation of the perovskite films open a new era and pave the way for the practical application of perovskite transistors in low-cost electronic circuits.

A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors

Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. Here, we investigate the mechanism behind these instabilities and demonstrate an effective route to suppress them to realize high-performance perovskite FETs with low hysteresis, high threshold voltage stability (ΔV_t < 2 V over 10 hours of continuous operation), and high mobility values >1 cm²/V·s at room temperature. We show that multiple cation incorporation using strain-relieving cations like Cs and cations such as Rb, which act as passivation/crystallization modifying agents, is an effective strategy for reducing vacancy concentration and ion migration in perovskite FETs. Furthermore, we demonstrate that treatment of perovskite films with positive azeotrope solvents that act as Lewis bases (acids) enables a further reduction in defect density and substantial improvement in performance and stability of n-type (p-type) perovskite devices.

Temperature and Gate Dependence of Carrier Diffusion in Single Crystal Methylammonium Lead Iodide Perovskite Microstructures

We investigate temperature-dependent photogenerated carrier diffusion in single-crystal methylammonium lead iodide microstuctures via scanning photocurrent microscopy. Carrier diffusion lengths increased abruptly across the tetragonal to orthorhombic phase transition and reached 200 ± 50 μm at 80 K. In combination with the microsecond carrier lifetime measured by a transient photocurrent method, an enormous carrier mobility value of 3 × 10⁴ cm²/V s was extracted at 80 K. The observed highly nonlocal photocurrent and the rapid increase of the carrier diffusion length at low temperatures can be understood by the formation and efficient transport of free excitons in the orthorhombic phase as a result of reduced optical phonon scattering due to the dipolar nature of the excitons. Carrier diffusion lengths were tuned by a factor of 8 by gate voltage and increased with increasing majority carrier (electron) concentration, consistent with the exciton model.

2D Perovskite Sr2 Nb3 O10 for High-Performance UV Photodetectors

2D perovskites, due to their unique properties and reduced dimension, are promising candidates for future optoelectronic devices. However, the development of stable and nontoxic 2D wide-bandgap perovskites remains a challenge. 2D all-inorganic perovskite Sr₂ Nb₃ O₁₀ (SNO) nanosheets with thicknesses down to 1.8 nm are synthesized by liquid exfoliation, and for the first time, UV photodetectors (PDs) based on individual few-layer SNO sheets are investigated. The SNO sheet-based PDs exhibit excellent UV detecting performance (narrowband responsivity = 1214 A W^-1 , external quantum efficiency = 5.6 × 10⁵ %, detectivity = 1.4 × 10¹⁴ Jones @270 nm, 1 V bias), and fast response speed (t_rise ≈ 0.4 ms, t_decay ≈ 40 ms), outperforming most reported individual 2D sheet-based UV PDs. Furthermore, the carrier transport properties of SNO and the performance of SNO-based phototransistors are successfully controlled by gate voltage. More intriguingly, the photodetecting performance and carrier transport properties of SNO sheets are dependent on their thickness. In addition, flexible and transparent PDs with high mechanical stability are easily fabricated based on SNO nanosheet film. This work sheds light on the development of high-performance optoelectronics based on low-dimensional wide-bandgap perovskites in the future.

Large lattice distortions and size-dependent bandgap modulation in epitaxial halide perovskite nanowires

Metal-halide perovskites have been shown to be remarkable and promising optoelectronic materials. However, despite ongoing research from multiple perspectives, some fundamental questions regarding their optoelectronic properties remain controversial. One reason is the high-variance of data collected from, often unstable, polycrystalline thin films. Here we use ordered arrays of stable, single-crystal cesium lead bromide (CsPbBr₃) nanowires grown by surface-guided chemical vapor deposition to study fundamental properties of these semiconductors in a one-dimensional model system. Specifically, we uncover the origin of an unusually large size-dependent luminescence emission spectral blue-shift. Using multiple spatially resolved spectroscopy techniques, we establish that bandgap modulation causes the emission shift, and by correlation with state-of-the-art electron microscopy methods, we reveal its origin in substantial and uniform lattice rotations due to heteroepitaxial strain and lattice relaxation. Understanding strain and its effect on the optoelectronic properties of these dynamic materials, from the atomic scale up, is essential to evaluate their performance limits and fundamentals of charge carrier dynamics.

An Emerging Visible-Light Organic-Inorganic Hybrid Perovskite for Photocatalytic Applications

The development of visible-light active photocatalysts is a current challenge especially energy and environmental-related fields. Herein, methylammonium lead iodide perovskite (MAIPb) was chosen as the novel semiconductor material for its ability of absorbing visible-light. An easily reproducible and efficient method was employed to synthesize the as-mentioned material. The sample was characterized by various techniques and has been used as visible-light photocatalyst for degradation of two model pollutants: rhodamine B (RhB) and methylene-blue (MB). The photo-degradation of RhB was found to achieve about 65% after 180 min of treatment. Moreover, the efficiency was enhanced to 100% by assisting the process with a small amount of H2O2. The visible-light activity of the photocatalyst was attributed to its ability to absorb light as well as to enhance separation of photogenerated carriers. The main outcome of the present work is the investigation of a hybrid perovskite as photocatalyst for wastewater treatment.

Electrical Methods to Elucidate Charge Transport in Hybrid Perovskites Thin Films and Devices

The panchromatic light absorption and excellent charge carrier transport properties in organo lead halide perovskites allowed to achieve an unprecedented power conversion efficiency in excess of 25 % for thin film photovoltaics fabrication. To understand the underlying phenomena, various comprehensive set of optical and electrical techniques have been employed to investigate the charge carrier dynamics in such devices. In this perspective, we aim to summarize the electrical transport properties of perovskite thin films by using (i) impedance spectroscopy (IS), (ii) space charge limited current (SCLC), (iii) field-effect transistors (FETs) and (iv) time-of-flight (TOF) methods. We have deliberated various equivalent circuit used to model the perovskite solar cells by means of IS. The SCLC technique provide vital electrical parameters such as mobility, activation energy, traps density and distribution, carrier concentration, density of states, etc. The TOF technique measures mobility as a primary parameter while the FETs configuration provide a valuable insight into the in-plane charge transport in perovskites thin films. We believe that these notable understanding will provide insights into charge carrier dynamics in perovskite materials and devices.

Stable, Strongly Emitting Cesium Lead Bromide Perovskite Nanorods with High Optical Gain Enabled by an Intermediate Monomer Reservoir Synthetic Strategy

One-dimensional (1D) semiconductor nanorods are important for numerous applications ranging from optics and electronics to biology, yet the direct synthesis of high-quality metal halide perovskite nanorods remains a challenge. Here, we develop an intermediate monomer reservoir synthetic strategy to realize the controllable growth of uniform and low-defect CsPbBr₃ perovskite nanorods. Intermediates composed of CsPb₂Br₅ and Cs₃In₂Br₉ are obtained through the substitution of Pb²⁺ with In³⁺ cations in the template of CsPbBr₃ nanocubes and act as a precursor reservoir to gradually release monomers, ensuring both the slow growth rate and low defects of nanorods. We have used branched tris(diethylamino)phosphine as a ligand, which not only has unequal binding energies with different crystal faces to promote the orientation growth but also provides strong steric hindrance to shield the nanorods in solution. Because of minor amount of defects and an effective ligand passivation, in addition to significantly enhanced stability, the perovskite nanorods show a high photoluminescence quantum yield of up to 90% and exhibit a net mode gain of 980 cm^-1, the latter being a record value among all the perovskite materials. An extremely low amplified spontaneous emission threshold of 7.5 μJ cm^-2 is obtained under excitation by a nanosecond laser, which is comparable to that obtained using femtosecond lasers in other recent studies.

Controllable Growth of Centimeter-Sized 2D Perovskite Heterostructures for Highly Narrow Dual-Band Photodetectors

Heterostructures consisting of 2D layered perovskites are expected to exhibit interesting physical phenomena inaccessible to the single 2D perovskites and can greatly extend their functionalities for electronic and optoelectronic applications. Herein, we develop a solution method to synthesize (C₄H₉NH₃)₂PbI₄/(C₄H₉NH₃)₂(CH₃NH₃)Pb₂I₇ heterostructures with centimeter size, high phase purity, controllable thickness and junction depth, high crystalline quality, and great stability for highly narrow dual-band photodetectors. On the basis of the different lattice constant, solubility, and growth rate between (C₄H₉NH₃)₂PbI₄ and (C₄H₉NH₃)₂(CH₃NH₃)Pb₂I₇, the designed synthetic method allows to first grow the (C₄H₉NH₃)₂PbI₄ at the water-air interface and subsequently the (C₄H₉NH₃)₂(CH₃NH₃)Pb₂I₇ layer is formed via a diffusion process. Such a growth process provides an efficient way for us to readily obtain heterostructures with various thickness and junction depth by controlling the concentration, reaction temperature, and time. The formation of heterostructures has been verified by X-ray diffraction, cross-section photoluminescence, and reflection spectroscopy with the estimated junction width below 100 nm. Photodetectors based on such heterostructures exhibit low dark current (∼10^-12 A), high on-off current ratio (∼10³), and highly narrow dual-band spectral response with a full-width at half-maximum (fwhm) of 20 nm at 540 nm and 34 nm at 610 nm. The high performance can be attributed to the high crystalline quality of the heterostructures and the extremely large resistance in the out-of-plane direction. The synthetic strategy is versatile for other 2D perovskites, and the narrow dual-band spectral response with all fwhm < 40 nm can be continuously tuned from red to blue by properly changing the halide compositions.

One-Step Vapor-Phase Synthesis and Quantum-Confined Exciton in Single-Crystal Platelets of Hybrid Halide Perovskites

To investigate the quantum confinement effect on excitons in hybrid perovskites, single-crystal platelets of CH₃NH₃PbBr₃ are grown on mica substrates using one-step chemical vapor deposition. Photoluminescence measurements reveal a monotonous blue shift with a decreasing platelet thickness, which is accompanied by a significant increase in exciton binding energy from approximately 70 to 150 meV. Those phenomena can be attributed to the one-dimensional (1D) quantum confinement effect in the two-dimensional platelets. Furthermore, we develop an analytical model to quantitatively elucidate the 1D confinement effect in such quantum wells with asymmetric barriers. Our analysis indicates that the exciton Bohr radius of single-crystal CH₃NH₃PbBr₃ is compressed from 4.0 nm for the thick (26.2 nm) platelets to 2.2 nm for the thin (5.9 nm) ones. The critical understanding of the 1D quantum confinement effect and the development of a general model to elucidate the exciton properties of asymmetric semiconductor quantum wells pave the way toward developing high-performance optoelectronic heterostructures.

Temperature-Dependent Band Gap in Two-Dimensional Perovskites: Thermal Expansion Interaction and Electron-Phonon Interaction

Two-dimensional organic-inorganic perovskites have attracted considerable interest recently. Here, we present a systematic study of the temperature-dependent photoluminescence on phase pure (n-BA)₂(MA) _n-1Pb _nI_{3 n+1} ( n = 1-5) and (iso-BA)₂(MA) _n-1Pb _nI_{3 n+1} ( n = 1-3) microplates obtained by mechanical exfoliation. The photoluminescence peak position gradually changes from a red-shift for n = 1 to a blue-shift for n = 5 with an increase in temperature in the (n-BA)₂(MA) _n-1Pb _nI_{3 n+1} ( n = 1-5) series, while only a monotonous blue-shift has been observed for the (iso-BA)₂(MA) _n-1Pb _nI_{3 n+1} ( n = 1-3) series, which can be attributed to the competition between the thermal expansion interaction and electron-phonon interaction. In the (n-BA)₂(MA) _n-1Pb _nI_{3 n+1} ( n = 1-5) series, the thermal expansion interaction and electron-phonon interaction are both gradually enhanced and the former progressively dominates the latter from n = 1 to n = 5, resulting in the band gap versus temperature changing from a red-shift to a blue-shift. In contrast, both of these factors show a weaker layer thickness dependence, leading to the monotonous blue-shift in the (iso-BA)₂(MA) _n-1Pb _nI_{3 n+1} ( n = 1-3) series.

Tetradic phosphor white light with variable CCT and superlative CRI through organolead halide perovskite nanocrystals

In this work, the emission spectral range of halide perovskite nanocrystals is extended from violet to infrared, the widest emission range for halide perovskites to date. This range extension was made possible by a cost-effective solution-based synthesis process that only involves two halides [MAPb(Br x I1-x )3 and MA = CH3NH3]. Furthermore, the correlated-color temperature (CCT) of white light is tuned by blending an appropriate fraction of the as-synthesized blue, green, yellow, and red emitting nanocrystals. This represents one of the first applications of a tetradic phosphor system for maximizing the color rendering index (CRI) for this material. The CCT ranges from warm to cool white (2759-6398 K) and the CRI has a maximum value of 93.95. Thus, this fourfold phosphor approach demonstrates that halide perovskites are promising alternatives to conventional phosphors in the search for low-cost and high-quality white light sources in the next generation of white lighting technology.

Beyond quantum confinement: excitonic nonlocality in halide perovskite nanoparticles with Mie resonances

Halide perovskite nanoparticles have demonstrated pronounced quantum confinement properties for nanometer-scale sizes and strong Mie resonances for 102 nm sizes. Here we studied the intermediate sizes where the nonlocal response of the exciton affects the spectral properties of Mie modes. The mechanism of this effect is associated with the fact that excitons in nanoparticles have an additional kinetic energy that is proportional to k2, where k is the wavenumber. Therefore, they possess higher energy than in the case of static excitons. The obtained experimental and theoretical results for MAPbBr3 nanoparticles of various sizes (2-200 nm) show that for particle radii comparable with the Bohr radius of the exciton (a few nanometers in perovskites), the blue-shift of the photoluminescence, scattering, and absorption cross-section peaks related to quantum confinement should be dominating due to the weakness of Mie resonances for such small sizes. On the other hand, for larger sizes (more than 50-100 nm), the influence of Mie modes increases, and the blue shift remains despite the fact that the effect of quantum confinement becomes much weaker.

Pressure-induced fluorescence enhancement of FAαPbBr2+α composite perovskites

FAαPbBr2+α composite perovskites consisting of 0D FA4PbBr6 and 3D FAPbBr3 have been synthesized by a solid state reaction. Due to the endotaxy passivation of FAPbBr3 by FA4PbBr6, FAPbBr3 crystals were stably deformed without agglomeration from the cubic to the orthorhombic structure by compression, which led to a significant PL enhancement.

The Role of Chloride Incorporation in Lead-Free 2D Perovskite (BA)2SnI4: Morphology, Photoluminescence, Phase Transition, and Charge Transport

The incorporation of chloride (Cl) into methylammonium lead iodide (MAPbI3) perovskites has attracted much attention because of the significantly improved performance of the MAPbI3-based optoelectronic devices with a negligible small amount of Cl incorporation. It is expected that the Cl incorporation in 2D perovskites with layered nature would be much more efficient and thus can greatly alter the morphology, optical properties, phase transition, and charge transport; however, studies on those aspects in 2D perovskites remain elusive up to date. Here, a one-pot solution method to synthesize the Cl-doped lead-free 2D perovskite (BA)2SnI4 with various Cl incorporation concentrations is reported and how the Cl incorporation affects the morphology change, photoluminescence, phase transition, and charge transport is investigated. The Cl element is successfully incorporated into the crystal lattice in the solution-processed perovskite materials, confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy measurements. The temperature-dependent photoluminescence studies indicate that the emission properties and phase transition behavior in (BA)2SnI4- x Cl x can be tuned by varying the Cl incorporation concentration. Electrical measurement suggests that the charge transport behavior can also be greatly altered by the Cl doping concentration and the electrical conductivity can be significantly improved under a higher Cl incorporation concentration.

Single crystal hybrid perovskite field-effect transistors

The fields of photovoltaics, photodetection and light emission have seen tremendous activity in recent years with the advent of hybrid organic-inorganic perovskites. Yet, there have been far fewer reports of perovskite-based field-effect transistors. The lateral and interfacial transport requirements of transistors make them particularly vulnerable to surface contamination and defects rife in polycrystalline films and bulk single crystals. Here, we demonstrate a spatially-confined inverse temperature crystallization strategy which synthesizes micrometre-thin single crystals of methylammonium lead halide perovskites MAPbX₃ (X = Cl, Br, I) with sub-nanometer surface roughness and very low surface contamination. These benefit the integration of MAPbX₃ crystals into ambipolar transistors and yield record, room-temperature field-effect mobility up to 4.7 and 1.5 cm² V⁻¹ s⁻¹ in p and n channel devices respectively, with 10⁴ to 10⁵ on-off ratio and low turn-on voltages. This work paves the way for integrating hybrid perovskite crystals into printed, flexible and transparent electronics.

The methylammonium lead halide perovskites have shown excellent optoelectronic properties but the field-effect transistors are much less studied. Here Yu et al. synthesize micrometer-thin crystals of perovskites with low surface contamination and make ambipolar transistor devices with high mobilities.