Properties of the exotic metastable ST12 germanium allotrope

Development of a machine learning interatomic potential for exploring pressure-dependent kinetics of phase transitions in germanium

We introduce a data-driven potential aimed at the investigation of pressure-dependent phase transitions in bulk germanium, including the estimate of kinetic barriers. This is achieved by suitably building a database including several configurations along minimum energy paths, as computed using the solid-state nudged elastic band method. After training the model based on density functional theory (DFT)-computed energies, forces, and stresses, we provide validation and rigorously test the potential on unexplored paths. The resulting agreement with the DFT calculations is remarkable in a wide range of pressures. The potential is exploited in large-scale isothermal-isobaric simulations, displaying local nucleation in the R8 to β-Sn pressure-induced phase transformation, taken here as an illustrative example.

From Topological Nodal-Line Semimetal to Insulator in ABW-Ge4: A New Member of the Germanium Allotrope

Topological semimetals have attracted much attention because of their excellent properties, such as ultra-high speed, low energy consumption quantum transport, and negative reluctance. Searching materials with topological semimetallic properties has become a new research field for Group-IV materials. Herein, using first-principles calculations and tight-binding modeling, we proposed a topological nodal-line semimetal ABW-Ge4 when spin-orbit coupling (SOC) is ignored, which is composed of pure germanium atoms in a zeolite framework ABW. It holds excellent dynamic and thermal stability. In its electronic band structure, there exists a stable Dirac linear band crossing near the Fermi energy level, which forms a closed ring in the kx = 0 plane of the Brillouin zone (BZ). Our symmetry analysis reveals that the nodal ring is protected by Mx mirror symmetry. Furthermore, by examining the slope index in all possible k paths through the considered Dirac point, we find that the band dispersion near the Dirac point is greatly anisotropic. In some direction, the Fermi velocity is even larger than that of graphene, being promising for the future ultra-high speed device. When spin-orbit coupling is included, the nodal line is gapped and the system becomes a topological insulator with topological invariants Z2 = 1. Our findings not only identify a new Ge allotrope but also establish a promising topological material in Group-IV materials, which may have the desirable compatibility with the traditional semiconductor industry.

Phase Transitions in Amorphous Germanium under Non-Hydrostatic Compression

As the pioneer semiconductor in transistor, germanium (Ge) has been widely applied in information technology for over half a century. Although many phase transitions in Ge have been reported, the complicated phenomena of the phase structures in amorphous Ge under extreme conditions are still not fully investigated. Here, we report the different routes of phase transition in amorphous Ge under different compression conditions utilizing diamond anvil cell (DAC) combined with synchrotron-based X-ray diffraction (XRD) and Raman spectroscopy techniques. Upon non-hydrostatic compression of amorphous Ge, we observed that shear stress facilitates a reversible pressure-induced phase transformation, in contrast to the pressure-quenchable structure under a hydrostatic compression. These findings afford better understanding of the structural behaviors of Ge under extreme conditions, which contributes to more potential applications in the semiconductor field.

A Review on Metastable Silicon Allotropes

Diamond cubic silicon is widely used for electronic applications, integrated circuits, and photovoltaics, due to its high abundance, nontoxicity, and outstanding physicochemical properties. However, it is a semiconductor with an indirect band gap, depriving its further development. Fortunately, other polymorphs of silicon have been discovered successfully, and new functional allotropes are continuing to emerge, some of which are even stable in ambient conditions and could form the basis for the next revolution in electronics, stored energy, and optoelectronics. Such structures can lead to some excellent features, including a wide range of direct or quasi-direct band gaps allowed efficient for photoelectric conversion (examples include Si-III and Si-IV), as well as a smaller volume expansion as lithium-battery anode material (such as Si₂₄, Si₄₆, and Si₁₃₆). This review aims to give a detailed overview of these exciting new properties and routes for the synthesis of novel Si allotropes. Lastly, the key problems and the developmental trends are put forward at the end of this article.

High-temperature phase transitions in dense germanium

Through a series of high-pressure x-ray diffraction experiments combined with in situ laser heating, we explore the pressure-temperature phase diagram of germanium (Ge) at pressures up to 110 GPa and temperatures exceeding 3000 K. In the pressure range of 64-90 GPa, we observe orthorhombic Ge-IV transforming above 1500 K to a previously unobserved high-temperature phase, which we denote as Ge-VIII. This high-temperature phase is characterized by a tetragonal crystal structure, space group I4/mmm. Density functional theory simulations confirm that Ge-IV becomes unstable at high temperatures and that Ge-VIII is highly competitive and dynamically stable at these conditions. The existence of Ge-VIII has profound implications for the pressure-temperature phase diagram, with melting conditions increasing to much higher temperatures than previous extrapolations would imply.

Sodium niobate based hierarchical 3D perovskite nanoparticle clusters

We report a microwave assisted synthesis of NaNbO3 perovskite mesocrystals with a hierarchical morphology formed by the self-assembly of nanoparticles in particle clusters. The synthesis method combines non-aqueous sol-gel synthesis and microwave heating in a single step process that allows us to isolate crystalline single phase NaNbO3 in few minutes. A detailed investigation of the effect of the reaction temperature on the crystallinity and morphology of the product was conducted. The synthesis stabilizes the unusual orthorhombic phase Pmma, a property that can be ascribed to the crystal size (24 nm). TEM and SAED analyses show that the hierarchical polycrystalline particles behave as single crystals, a feature related to a non-classical crystallization mechanism. Moreover, the optical bandgap of this NaNbO3 phase was estimated for the first time. The results suggest the potential of this synthetic procedure for the fast production of high quality tertiary oxide nanocrystals.

Atypical reversed pressure-induced phase transformation in Ge nanowires

Phase transformations of Ge under compression/decompression cycle at room temperature were studied in a diamond anvil cell (DAC) using in situ synchrotron x-ray diffraction, Raman spectroscopy and near infrared absorption techniques. Upon compression similar behavior is observed in nanowires and in bulk although a higher stability is observed in nanowires. The cubic-diamond phase (Ge-3C), the most energetically favorable phase, transforms into the β-tin metallic phase at high pressure and the reverse Ge-β-tin to Ge-3C transformation is generally inhibited by kinetics when pressure is released. While the transformation in Ge bulk leads mostly to Ge-ST12 phase, the loading/unloading cycle of Ge nanowires in DAC leads back to Ge-3C, exhibiting unprecedented size effects. A comprehensive characterization of the final states is described.

Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure

Si–Ge crystals are promising materials for use in various stress-controlled electronic junctions for next-generation nanoelectronic devices.

Physical properties of Si-Ge alloys in C2/m phase: a comprehensive investigation

A new phase of C2/m Ge₁₆ is first proposed in this paper. The structures and mechanical, anisotropic, electronic, transport and optical properties of Si-Ge alloys in the C2/m phase are studied using first principles calculations. All Ge₁₆ and Si_16-x Ge _x alloys in the C2/m phase are proven to have mechanical and dynamic stability. By analyzing the three-dimensional (3D) perspective of the effective mass and Young's modulus, obvious anisotropies of transport and mechanical properties are found. Higher-resolution full band structures are obtained to determine the positions of the valence band maximum (VBM) and conduction band minimum (CBM). All materials have a higher photoelectron absorption than that of diamond Si. A high electronic mobility (16 527 cm² V^-1 s^-1) and hole mobility (3033 cm² V^-1 s^-1) are found in C2/m Si₈Ge₈ and Si₄Ge₁₂, respectively. Based on the large mobility and photoelectron absorption, the Si-Ge alloys in the C2/m phase are promising materials for electronics and optoelectronics applications.

Zintl Phases as Reactive Precursors for Synthesis of Novel Silicon and Germanium-Based Materials

Recent experimental and theoretical work has demonstrated significant potential to tune the properties of silicon and germanium by adjusting the mesostructure, nanostructure, and/or crystalline structure of these group 14 elements. Despite the promise to achieve enhanced functionality with these already technologically important elements, a significant challenge lies in the identification of effective synthetic approaches that can access metastable silicon and germanium-based extended solids with a particular crystal structure or specific nano/meso-structured features. In this context, the class of intermetallic compounds known as Zintl phases has provided a platform for discovery of novel silicon and germanium-based materials. This review highlights some of the ways in which silicon and germanium-based Zintl phases have been utilized as precursors in innovative approaches to synthesize new crystalline modifications, nanoparticles, nanosheets, and mesostructured and nanoporous extended solids with properties that can be very different from the ground states of the elements.

Optical properties and lattice dynamics of a novel allotrope of orthorhombic elemental germanium

Optical and vibrational properties of a novel allotrope of elemental germanium Ge(oP32), which crystallizes in the structure corresponding to the orthorhombic space group Pbcm, are studied experimentally by means of absorption and polarized Raman scattering measurements and theoretically using the first principles density functional theory. Material is found to be a direct band gap semiconductor with E _g   =  0.33 eV. Out of theoretically predicted 48 Raman-active modes, 27 are observed in the spectra and assigned to the specific lattice eigenmodes of the crystal based on their symmetry and a comparison with the results of first principles lattice dynamics calculations. Remarkably, the highest frequency vibration is observed at 316 cm^-1, that is higher than the cubic crystalline [Formula: see text]-Ge mode at 300 cm^-1. Exceptional sharpness of observed phonon lines (between 0.8 and 2.5 cm^-1 at T  =  10 K) implies excellent crystallinity of Ge(oP32) crystals.

Complex Low Energy Tetrahedral Polymorphs of Group IV Elements from First Principles

The energy landscape of carbon is exceedingly complex, hosting diverse and important metastable phases, including diamond, fullerenes, nanotubes, and graphene. Searching for structures, especially those with large unit cells, in this landscape is challenging. Here we use a combined stochastic search strategy employing two algorithms (ab initio random structure search and random sampling strategy combined with space group and graph theory) to apply connectivity constraints to unit cells containing up to 100 carbon atoms. We uncover three low energy carbon polymorphs (Pbam-32, P6/mmm, and I4[over ¯]3d) with new topologies, containing 32, 36, and 94 atoms in their primitive cells, respectively. Their energies relative to diamond are 96, 131, and 112  meV/atom, respectively, which suggests potential metastability. These three carbon allotropes are mechanically and dynamically stable, insulating carbon crystals with superhard mechanical properties. The I4[over ¯]3d structure possesses a direct band gap of 7.25 eV, which is the widest gap in the carbon allotrope family. Silicon, germanium, and tin versions of Pbam-32, P6/mmm, and I4[over ¯]3d also show energetic, dynamical, and mechanical stability. The computed electronic properties show that they are potential materials for semiconductor and photovoltaic applications.

Three-Dimensional Core-Shell Nanorod Arrays for Efficient Visible-Light Photocatalytic H2 Production

Constructing heterostructured nanomaterials with integrating different functional materials into well-oriented nanoarchitectures is an efficacious tactic to obtain high-performance photocatalysts. In this paper, we fabricated three-dimensional ZnO-WS₂@CdS core-shell nanorod arrays as visible-light-driven photocatalysts for efficient photocatalytic H₂ production. This unique core-shell heterostructure extends visible-light absorption and provides more active sites. More importantly, the ZnO-WS₂@CdS nanorod arrays build a beneficial energy level configuration and spatial structure to accelerate the generation, separation, and transfer of the photogenerated electron-hole. On the basis of the synergistic effects, the photocatalytic H₂ rate of optimized ZnO-WS₂@CdS nanorod arrays achieves 15.12 mmol h^-1 g^-1 in visible light irradiation, which is 39, 9, and 8 times higher than pure CdS, ZnO-CdS, and CdS-WS₂ photocatalysts. The apparent quantum yield is up to 14.92% at 420 nm. Moreover, the core-shell heterostructure photocatalyst can recycle and maintain stability.

Narrow Gap Semiconducting Germanium Allotrope from the Oxidation of a Layered Zintl Phase in Ionic Liquids

A metastable germanium allotrope, Ge(oP32), was synthesized as polycrystalline powders and single crystals from the mild-oxidation/delithiation of Li₇Ge₁₂ in ionic liquids. Its crystal structure, from single crystal X-ray diffraction ( Pbcm, a = 8.1527(4) Å, b = 11.7572(5) Å, c = 7.7617(4) Å), features a complex covalent network of 4-bonded Ge, resulting from a well-ordered topotactic oxidative condensation of [Ge₁₂]^7- layers. It is a diamagnetic semiconductor ( E_g = 0.33 eV), and transforms exothermically and irreversibly to α-Ge at 363 °C. This demonstrates the potential of ionic liquids as reactive media in the mild oxidation of Zintl phases to new highly crystallized modifications of elements and simple compounds.