High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

Charge Transfer from Quantum-Confined 0D, 1D, and 2D Nanocrystals

The properties of colloidal quantum-confined semiconductor nanocrystals (NCs), including zero-dimensional (0D) quantum dots, 1D nanorods, 2D nanoplatelets, and their heterostructures, can be tuned through their size, dimensionality, and material composition. In their photovoltaic and photocatalytic applications, a key step is to generate spatially separated and long-lived electrons and holes by interfacial charge transfer. These charge transfer properties have been extensively studied recently, which is the subject of this Review. The Review starts with a summary of the electronic structure and optical properties of 0D-2D nanocrystals, followed by the advances in wave function engineering, a novel way to control the spatial distribution of electrons and holes, through their size, dimension, and composition. It discusses the dependence of NC charge transfer on various parameters and the development of the Auger-assisted charge transfer model. Recent advances in understanding multiple exciton generation, decay, and dissociation are also discussed, with an emphasis on multiple carrier transfer. Finally, the applications of nanocrystal-based systems for photocatalysis are reviewed, focusing on the photodriven charge separation and recombination processes that dictate the function and performance of these materials. The Review ends with a summary and outlook of key remaining challenges and promising future directions in the field.

Boosting internal quantum efficiency via ultrafast triplet transfer to 2H-MoTe2 film

Organic systems often allow to create two triplet spin states (triplet excitons) by converting an initially excited singlet spin state (a singlet exciton). An ideally designed organic/inorganic heterostructure could reach the photovoltaic energy harvest over the Shockley-Queisser (S-Q) limit because of the efficient conversion of triplet excitons into charge carriers. Here, we demonstrate the molybdenum ditelluride (MoTe₂)/pentacene heterostructure to boost the carrier density via efficient triplet transfer from pentacene to MoTe₂ using ultrafast transient absorption spectroscopy. We observe carrier multiplication by nearly four times by doubling carriers in MoTe₂ via the inverse Auger process and subsequently doubling carriers via triplet extraction from pentacene. We also verify efficient energy conversion by doubling the photocurrent in the MoTe₂/pentacene film. This puts a step forward to enhancing photovoltaic conversion efficiency beyond the S-Q limit in the organic/inorganic heterostructures.

Ultrafast dynamics under high-pressure

High-pressure is a mechanical method to regulate the structure and internal interaction of materials. Therefore, observation of properties' change can be realized in a relatively pure environment. Furthermore, high-pressure affects the delocalization of wavefunction among materials' atoms and thus their dynamics process. Dynamics results are essential data for understanding the physical and chemical characteristics, which is valuable for materials application and development. Ultrafast spectroscopy is a powerful tool to investigate dynamics process and becoming a necessary characterization method for materials investigation. The combination of high-pressure with ultrafast spectroscopy in the nanocosecond∼femtosecond scale enables us to investigate the influence of the enhanced interaction between particles on the physical and chemical properties of materials, such as energy transfer, charge transfer, Auger recombination, etc. Base on this point of view, this review summarizes recent progress in the ultrafast dynamics under high-pressure for various materials, in which new phenomena and new mechanisms are observed. In this review, we describe in detail the principles ofin situhigh pressure ultrafast dynamics probing technology and its field of application. On this basis, the progress of the study of dynamic processes under high-pressure in different material systems is summarized. An outlook onin situhigh-pressure ultrafast dynamics research is also provided.

Multiple Exciton Generation in 3D-Ordered Networks of Ge Quantum Wires in Alumina Matrix

Thin films containing 3D-ordered semiconductor quantum wires offer a great tool to improve the properties of photosensitive devices. In the present work, we investigate the photo-generated current in thin films consisting of an interconnected 3D-ordered network of Ge quantum wires in an alumina matrix. The films are prepared using nitrogen-assisted magnetron sputtering co-deposition of Ge and Al2O3. We demonstrate a strong photocurrent generation in the films, much stronger than in similar films containing Ge quantum dots. The enhanced photocurrent generation is the consequence of the multiple exciton generation and the films’ specific structure that allows for efficient carrier transport. Thin film with the largest nitrogen content showed enhanced performance compared to other thin films with 1.6 excitons created after absorption of a single photon at an energy nearly equal to the double bandgap value. The bandgap value depends on the geometrical properties of the quantum wires, and it is close to the maximum of the solar irradiance in this case. In addition, we show that the multiple exciton generation is the most pronounced at the photon energy values equal to multiple values of the thin film bandgap.

Electron Transfer at Quantum Dot–Metal Oxide Interfaces for Solar Energy Conversion

Electron transfer at a donor–acceptor quantum dot–metal oxide interface is a process fundamentally relevant to solar energy conversion architectures as, e.g., sensitized solar cells and solar fuels schemes. As kinetic competition at these technologically relevant interfaces largely determines device performance, this Review surveys several aspects linking electron transfer dynamics and device efficiency; this correlation is done for systems aiming for efficiencies up to and above the ∼33% efficiency limit set by Shockley and Queisser for single gap devices. Furthermore, we critically comment on common pitfalls associated with the interpretation of kinetic data obtained from current methodologies and experimental approaches, and finally, we highlight works that, to our judgment, have contributed to a better understanding of the fundamentals governing electron transfer at quantum dot–metal oxide interfaces.

Multiple exciton generation in isolated and interacting silicon nanocrystals

An important challenge in the field of renewable energy is the development of novel nanostructured solar cell devices which implement low-dimensional materials to overcome the limits of traditional photovoltaic systems. For optimal energy conversion in photovoltaic devices, one important requirement is that the full energy of the solar spectrum is effectively used. In this context, the possibility of exploiting features and functionalities induced by the reduced dimensionality of the nanocrystalline phase, in particular by the quantum confinement of the electronic density, can lead to a better use of the carrier excess energy and thus to an increment of the thermodynamic conversion efficiency of the system. Carrier multiplication, i.e. the generation of multiple electron-hole pairs after absorption of one single high-energy photon (with energy at least twice the energy gap of the system), can be exploited to maximize cell performance, promoting a net reduction of loss mechanisms. Over the past fifteen years, carrier multiplication has been recorded in a large variety of semiconductor nanocrystals and other nanostructures. Owing to the role of silicon in solar cell applications, the mission of this review is to summarize the progress in this fascinating research field considering carrier multiplication in Si-based low-dimensional systems, in particular Si nanocrystals, both from the experimental and theoretical point of view, with special attention given to the results obtained by ab initio calculations.

Hot excitons cooling and multiexcitons Auger recombination in PbS quantum dots

In the past few years, lead chalcogenide quantum dots (QDs) have attracted attention as a new system with a strong quantum confinement effect. In this paper, the hot-excitons cooling and Auger recombination of multiexcitons in PbS QDs are investigated by the femtosecond time-resolved transient absorption spectroscopy. The results show that the excitons dynamics in PbS QDs are closely related to the pump-photon energy and pump-pulse energy. Multiexcitons generate when the excess energy of the absorbed photons is larger than the bandgap energy in PbS QDs. The hot-excitons cooling lifetime increases but the Auger recombination lifetime decreases as the pump-photon energy and the pump-pulse energy increase. Besides, there is a competitive relation between multiple-excitons generation and hot-excitons cooling. The dynamics results of the formation and relaxation of multiexcitons in PbS QDs would shed light on the further understanding of the interaction between excitons and photons in the optoelectronic application based on PbS QDs.

Escalated Photocurrent with Excitation Energy in Dual-Gated MoTe2

Although van der Waals-layered transition metal dichalcogenides from transient absorption spectroscopy have successfully demonstrated an ideal carrier multiplication (CM) performance with an onset of nearly 2E_g, interpretation of the CM effect from the optical approach remains unresolved owing to the complexity of many-body electron-hole pairs. We demonstrate the escalated photocurrent with excitation photon energy by fabricating the dual-gate p-n junction of a MoTe₂ film on a transparent substrate. Electrons and holes were efficiently extracted by eliminating the Schottky barriers in the metal contact and minimizing multiple reflections. The photocurrent was elevated proportionately to the excitation photon energy. The boosted quantum efficiency confirms the multiple electron-hole pair generation of >2E_g, consistent with CM results from an optical approach, pushing the solar cell efficiency beyond the Shockley-Queisser limit.

Interparticle Spacing Effect among Quantum Dots with High-Pressure Regulation

In this paper, we explore whether interparticle spacing affects steady-state and transient-state optical properties by comparing close-packed CdSe/ZnS-quantum dots (QDs) and CdSe/ZnS-QDs dispersed in polymethyl methacrylate (PMMA). High-pressure is an effective physical means to adjust the interparticle spacing of QDs, which may artificially expand the application of QDs further. The results under high-pressure indicate that it is the reduced interparticle spacing rather than the enhanced quantum confinement effect with volume compression that has a stronger effect on exciton relaxation of CdSe/ZnS-QDs. This work is hoped to help us further understand the effect of interparticle spacing among QDs in various integrated environments.

Photoconductivity Multiplication in Semiconducting Few-Layer MoTe2

We report efficient photoconductivity multiplication in few-layer 2H-MoTe₂ as a direct consequence of an efficient steplike carrier multiplication with near unity quantum yield and high carrier mobility (∼45 cm² V^-1 s^-1) in MoTe₂. This photoconductivity multiplication is quantified using ultrafast, excitation-wavelength-dependent photoconductivity measurements employing contact-free terahertz spectroscopy. We discuss the possible origins of efficient carrier multiplication in MoTe₂ to guide future theoretical investigations. The combination of photoconductivity multiplication and the advantageous bandgap renders MoTe₂ as a promising candidate for efficient optoelectronic devices.

Optical properties of nanocrystal films: blue shifted transitions as signature of strong coupling

We present a theoretical study at the atomistic level of the optical properties of semiconductor nanocrystal films. We investigate the dependence of the absorption coefficient on size, inter-dot separation, surface stoichiometry and morphology, temperature, position of the Fermi level and light polarization. Our results show that, counter-intuitively, huge blue shifts are expected in some intra-band transitions for strongly coupled arrays, in contrast with the predicted and observed red shift of the band gap absorption in such systems. Furthermore, we find that the energies of such transitions can be tuned within a range of several hundreds of meV, just by engineering the inter-dot separation in the film through the choice of appropriately sized capping ligands. Finally we discuss the application of this effect to nanocrystal-based intermediate-band solar cells.

Carrier multiplication in van der Waals layered transition metal dichalcogenides

Carrier multiplication (CM) is a process in which high-energy free carriers relax by generation of additional electron-hole pairs rather than by heat dissipation. CM is promising disruptive improvements in photovoltaic energy conversion and light detection technologies. Current state-of-the-art nanomaterials including quantum dots and carbon nanotubes have demonstrated CM, but are not satisfactory owing to high-energy-loss and inherent difficulties with carrier extraction. Here, we report CM in van der Waals (vdW) MoTe₂ and WSe₂ films, and find characteristics, commencing close to the energy conservation limit and reaching up to 99% CM conversion efficiency with the standard model. This is demonstrated by ultrafast optical spectroscopy with independent approaches, photo-induced absorption, photo-induced bleach, and carrier population dynamics. Combined with a high lateral conductivity and an optimal bandgap below 1 eV, these superior CM characteristics identify vdW materials as an attractive candidate material for highly efficient and mechanically flexible solar cells in the future.

During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe₂ and WSe₂ films with up to 99% conversation efficiency.

Ultrahigh Hot Carrier Transient Photocurrent in Nanocrystal Arrays by Auger Recombination

In this report, we show that a new mechanism for carrier transport in solution-processed colloidal semiconductor nanocrystal arrays exists at high excitation intensity on ultrafast time scales and allows for facile intrinsic transport between as-prepared nanocrystals over long distances. By combining a high speed photoconductive switch with an ultrafast laser excitation in a sub-40 ps photoconductor, we observed transient photocurrents with peak densities of 3 × 10⁴ - 10⁶ mA/cm² in self-assembled PbSe nanocrystals capped with long native oleic acid ligands. The ratio between the transient photocurrent peak and the steady-state dark current is 10 orders of magnitude. The transient mobility at the peak current is estimated to range between 0.5-17.5 cm²/(V s) for the various nanocrystal sizes studied, which is 6 to 9 orders of magnitude higher than the dark current steady-state mobility in PbSe, CdSe, and CdTe nanocrystals capped with native ligands. The results are analyzed using a kinetic model which attributes the ultrahigh transient photocurrent to multiple photogenerated excitons undergoing on-particle Auger recombination, followed by rapid tunneling at high energies. This mechanism is demonstrated for a wide range of PbSe nanocrystals sizes (diameters from 2.7 to 7.1 nm) and experimental parameters. Our observations indicate that native ligand-capped nanocrystal arrays are promising for optoelectronics applications wherein multiple carriers are photoinjected to interband states.

The interparticle distance limit for multiple exciton dissociation in PbS quantum dot solid films

Understanding the behaviour of multiple exciton dissociation in quantum dot (QD) solid films is of fundamental interest and paramount importance for improving the performance of quantum dot solar cells (QDSCs). Unfortunately, the charge transfer behaviour of photogenerated multiple exciton in QD solid films is not clear to date. Herein, we systematically investigate the multiple exciton charge transfer behaviour in PbS QD solid films by using ultrafast transient absorption spectroscopy. We observe that the multiple exciton charge transfer rate within QD ensembles is exponentially enhanced as the interparticle distance between the QDs decreases. Biexciton and triexciton dissociation between adjacent QDs occurs via a charge transfer tunneling effect just like single exciton, and the charge tunneling constants of the single exciton (β₁: 0.67 ± 0.02 nm^-1), biexciton (β₂: 0.68 ± 0.05 nm^-1) and triexciton (β₃: 0.71 ± 0.01 nm^-1) are obtained. More importantly, for the first time, the interparticle distance limit (≤4.3 nm) for multiple exciton charge transfer between adjacent QDs is found for the extraction of multiple excitons rapidly before the occurrence of Auger recombination. This result points out a vital and necessary condition for the use of multiple excitons produced in PbS QD films, especially for their applications in QDSCs.

Model To Determine a Distinct Rate Constant for Carrier Multiplication from Experiments

Carrier multiplication (CM) is the process in which multiple electron-hole pairs are created upon absorption of a single photon in a semiconductor. CM by an initially hot charge carrier occurs in competition with cooling by phonon emission, with the respective rates determining the CM efficiency. Up until now, CM rates have only been calculated theoretically. We show for the first time how to extract a distinct CM rate constant from experimental data of the relaxation time of hot charge carriers and the yield of CM. We illustrate this method for PbSe quantum dots. Additionally, we provide a simplified method using an estimated energy loss rate to estimate the CM rate constant just above the onset of CM, when detailed experimental data of the relaxation time is missing.

Highly Photoconductive InP Quantum Dots Films and Solar Cells

InP and InZnP colloidal quantum dots (QDs) are promising materials for application in light-emitting devices, transistors, photovoltaics, and photocatalytic cells. In addition to possessing an appropriate bandgap, high absorption coefficient, and high bulk carrier mobilities, the intrinsic toxicity of InP and InZnP is much lower than for competing QDs that contain Cd or Pb-providing a potentially safer commercial product. However, compared to other colloidal QDs, InP QDs remain sparsely used in devices and their electronic transport properties are largely unexplored. Here, we use time-resolved microwave conductivity measurements to study charge transport in films of InP and InZnP colloidal quantum dots capped with a variety of short ligands. We find that transport in InP QDs is dominated by trapping effects, which are mitigated in InZnP QDs. We improve charge carrier mobilities with a range of ligand-exchange treatments and for the best treatments reach mobilities and lifetimes on par with those of PbS QD films used in efficient solar cells. To demonstrate the device-grade quality of these films, we construct solar cells based on InP & InZnP QDs with power conversion efficiencies of 0.65 and 1.2%, respectively. This represents a large step forward in developing Cd- and Pb-free next-generation optoelectronic devices.

Quantum Dot Solar Cells: Small Beginnings Have Large Impacts

From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state can take when relaxing back to the ground state. Systematically understanding the fundamental processes occurring in QDs has led to improvements in solar cell efficiency from ~3% to over 13% in 8 years. We compile data from ~200 articles reporting functioning QDSCs to give an overview of the current limitations in the technology. We find that the open circuit voltage limits the device efficiency and propose some strategies for overcoming this limitation.

Charge Mobility and Dynamics in Spin-Crossover Nanoparticles Studied by Time-Resolved Microwave Conductivity

We use the electrodeless time-resolved microwave conductivity (TRMC) technique to characterize spin-crossover (SCO) nanoparticles. We show that TRMC is a simple and accurate means for simultaneously assessing the magnetic state of SCO compounds and charge transport information on the nanometer length scale. In the low-spin state from liquid nitrogen temperature up to 360 K the TRMC measurements present two well-defined regimes in the mobility and in the half-life times, in which the former transition temperature T_R occurs near 225 K. Below T_R, we propose that an activationless regime taking place associated with short lifetimes of the charge carriers points at the presence of shallow-trap states. Above T_R, these states are thermally released, yielding a thermally activated hopping regime where longer hops increase the mobility and, concomitantly, the barrier energy. The activation energy could originate not only from intricate contributions such as polaronic self-localizations but also from dynamic disorder due to phonons and/or thermal fluctuations of SCO moieties.

Fundamental Properties in Colloidal Quantum Dots

A multidisciplinary approach for the production and characterization of colloidal quantum dots, which show great promise for implementation in modern optoelectronic applications, is described. The approach includes the design and formation of unique core/shell structures with alloy-composed layers between the core and the shell. Such structures eliminate interfacial defects and suppress the Auger process, thus reducing the known fluorescence blinking and endowing the quantum dots with robust chemical and spectral stability. The unique design enables the generation and sustained existence of single and multiple excitons with a defined spin-polarized emission recombination. The studies described herein implement the use of single-dot magneto-optical measurements and optically detected magnetic resonance spectroscopy, for direct identification of interfacial defects and for resolving exciton fine structure. The results are of paramount importance for a fundamental understanding of optical transitions in colloidal quantum dots, with an impact on appropriate materials design for practical applications.

Asymmetric Optical Transitions Determine the Onset of Carrier Multiplication in Lead Chalcogenide Quantum Confined and Bulk Crystals

Carrier multiplication is a process in which one absorbed photon excites two or more electrons. This is of great promise to increase the efficiency of photovoltaic devices. Until now, the factors that determine the onset energy of carrier multiplication have not been convincingly explained. We show experimentally that the onset of carrier multiplication in lead chalcogenide quantum confined and bulk crystals is due to asymmetric optical transitions. In such transitions most of the photon energy in excess of the band gap is given to either the hole or the electron. The results are confirmed and explained by theoretical tight-binding calculations of the competition between impact ionization and carrier cooling. These results are a large step forward in understanding carrier multiplication and allow for a screening of materials with an onset of carrier multiplication close to twice the band gap energy. Such materials are of great interest for development of highly efficient photovoltaic devices.

Efficient Steplike Carrier Multiplication in Percolative Networks of Epitaxially Connected PbSe Nanocrystals

Carrier multiplication (CM) is a process in which a single photon excites two or more electrons. CM is of interest to enhance the efficiency of a solar cell. Until now, CM in thin films and solar cells of semiconductor nanocrystals (NCs) has been found at photon energies well above the minimum required energy of twice the band gap. The high threshold of CM strongly limits the benefits for solar cell applications. We show that CM is more efficient in a percolative network of directly connected PbSe NCs. The CM threshold is at twice the band gap and increases in a steplike fashion with photon energy. A lower CM efficiency is found for a solid of weaker coupled NCs. This demonstrates that the coupling between NCs strongly affects the CM efficiency. According to device simulations, the measured CM efficiency would significantly enhance the power conversion efficiency of a solar cell.

Control of Multiple Exciton Generation and Electron-Phonon Coupling by Interior Nanospace in Hyperstructured Quantum Dot Superlattice

The possibility of precisely manipulating interior nanospace, which can be adjusted by ligand-attaching down to the subnanometer regime, in a hyperstructured quantum dot (QD) superlattice (QDSL) induces a new kind of collective resonant coupling among QDs and opens up new opportunities for developing advanced optoelectric and photovoltaic devices. Here, we report the first real-time dynamics simulations of the multiple exciton generation (MEG) in one-, two-, and three-dimensional (1D, 2D, and 3D) hyperstructured H-passivated Si QDSLs, accounting for thermally fluctuating band energies and phonon dynamics obtained by finite-temperature ab initio molecular dynamics simulations. We computationally demonstrated that the MEG was significantly accelerated, especially in the 3D QDSL compared to the 1D and 2D QDSLs. The MEG acceleration in the 3D QDSL was almost 1.9 times the isolated QD case. The dimension-dependent MEG acceleration was attributed not only to the static density of states but also to the dynamical electron-phonon couplings depending on the dimensionality of the hyperstructured QDSL, which is effectively controlled by the interior nanospace. Such dimension-dependent modifications originated from the short-range quantum resonance among component QDs and were intrinsic to the hyperstructured QDSL. We propose that photoexcited dynamics including the MEG process can be effectively controlled by only manipulating the interior nanospace of the hyperstructured QDSL without changing component QD size, shape, compositions, ligand, etc.

Metal-Insulator Transition in Nanoparticle Solids: Insights from Kinetic Monte Carlo Simulations

Progress has been rapid in increasing the efficiency of energy conversion in nanoparticles. However, extraction of the photo-generated charge carriers remains challenging. Encouragingly, the charge mobility has been improved recently by driving nanoparticle (NP) films across the metal-insulator transition (MIT). To simulate MIT in NP films, we developed a hierarchical Kinetic Monte Carlo transport model. Electrons transfer between neighboring NPs via activated hopping when the NP energies differ by more than an overlap energy, but transfer by a non-activated quantum delocalization, if the NP energies are closer than the overlap energy. As the overlap energy increases, emerging percolating clusters support a metallic transport across the entire film. We simulated the evolution of the temperature-dependent electron mobility. We analyzed our data in terms of two candidate models of the MIT: (a) as a Quantum Critical Transition, signaled by an effective gap going to zero; and (b) as a Quantum Percolation Transition, where a sample-spanning metallic percolation path is formed as the fraction of the hopping bonds in the transport paths is going to zero. We found that the Quantum Percolation Transition theory provides a better description of the MIT. We also observed an anomalously low gap region next to the MIT. We discuss the relevance of our results in the light of recent experimental measurements.

Boosting Biexciton Collection Efficiency at Quantum Dot-Oxide Interfaces by Hole Localization at the Quantum Dot Shell

Harvesting multiexcitons from semiconductor quantum dots (QDs) has been proposed as a path toward photovoltaic efficiencies beyond the Shockley-Queisser limit. Although multiexciton generation efficiencies have been quantified extensively in QD structures, the challenge of actually collecting multiple excitons at electrodes-a prerequisite for high-efficiency solar cell devices-has received less attention. Here, we demonstrate that multiexciton collection (MEC) at the PbS QD/mesoporous SnO₂ interface can be boosted 5-fold from ∼15 to reach ∼80% quantum yield, by partial localization of holes in a QD molecular capping shell. The resulting weakened Coulombic interactions give rise to reduced Auger recombination rates within the molecularly capped QDs, so that biexciton Auger relaxation, competing with MEC, is strongly suppressed. These results not only highlight the importance of surface chemistry and energetics at QD/ligand interfaces for multiexciton extraction but also provide clear design principles for realizing the benefits of MEG in sensitized systems exploited in solar cells and fuel geometries.

Spectroscopic and Device Aspects of Nanocrystal Quantum Dots

The field of nanocrystal quantum dots (QDs) is already more than 30 years old, and yet continuing interest in these structures is driven by both the fascinating physics emerging from strong quantum confinement of electronic excitations, as well as a large number of prospective applications that could benefit from the tunable properties and amenability toward solution-based processing of these materials. The focus of this review is on recent advances in nanocrystal research related to applications of QD materials in lasing, light-emitting diodes (LEDs), and solar energy conversion. A specific underlying theme is innovative concepts for tuning the properties of QDs beyond what is possible via traditional size manipulation, particularly through heterostructuring. Examples of such advanced control of nanocrystal functionalities include the following: interface engineering for suppressing Auger recombination in the context of QD LEDs and lasers; Stokes-shift engineering for applications in large-area luminescent solar concentrators; and control of intraband relaxation for enhanced carrier multiplication in advanced QD photovoltaics. We examine the considerable recent progress on these multiple fronts of nanocrystal research, which has resulted in the first commercialized QD technologies. These successes explain the continuing appeal of this field to a broad community of scientists and engineers, which in turn ensures even more exciting results to come from future exploration of this fascinating class of materials.

Charge transport and localization in atomically coherent quantum dot solids

Epitaxial attachment of quantum dots into ordered superlattices enables the synthesis of quasi-two-dimensional materials that theoretically exhibit features such as Dirac cones and topological states, and have major potential for unprecedented optoelectronic devices. Initial studies found that disorder in these structures causes localization of electrons within a few lattice constants, and highlight the critical need for precise structural characterization and systematic assessment of the effects of disorder on transport. Here we fabricated superlattices with the quantum dots registered to within a single atomic bond length (limited by the polydispersity of the quantum dot building blocks), but missing a fraction (20%) of the epitaxial connections. Calculations of the electronic structure including the measured disorder account for the electron localization inferred from transport measurements. The calculations also show that improvement of the epitaxial connections will lead to completely delocalized electrons and may enable the observation of the remarkable properties predicted for these materials.

Two-Dimensional Visible Spectroscopy For Studying Colloidal Semiconductor Nanocrystals

Possibilities offered by 2D visible spectroscopy for the investigation of the properties of excitons in colloidal semiconductor nanocrystals are overviewed, with a particular focus on their ultrafast dynamics. The technique of 2D electronic spectroscopy is illustrated with several examples showing its advantages compared to 1D ultrafast spectroscopic techniques (transient absorption and time-resolved photoluminescence).

Advanced Inorganic Nanoarchitectures from Oriented Self-Assembly

Complex and well-defined nanostructures are promising for emerging properties with broad applications. Self-assembly processes driven by diverse interactions generate varied nanostructures by using versatile nanocrystals as building blocks, while oriented attachment growth allows individual nanocrystals to be integrated and fused into highly anisotropic structures. By a combination of self-assembly technique and oriented attachment growth, many advanced nanostructures can be made. Such approaches can be viewed as an architecture of the nanoscale counterparts in the microworld, named as nanoarchitectures.

Designed Assembly and Integration of Colloidal Nanocrystals for Device Applications

Colloidal nanocrystals have been intensively studied over the past three decades due to their unique properties that originate, in large part, from their nanometer-scale sizes. For applications in electronic and optoelectronic devices, colloidal nanoparticles are generally employed as assembled nanocrystal solids, rather than as individual particles. Consequently, tailoring 2D patterns as well as 3D architectures of assembled nanocrystals is critical for their various applications to micro- and nanoscale devices. Here, recent advances in the designed assembly, film fabrication, and printing/integration methods for colloidal nanocrystals are presented. The advantages and drawbacks of these methods are compared, and various device applications of assembled/integrated colloidal nanocrystal solids are discussed.

Diversity of sub-bandgap states in lead-sulfide nanocrystals: real-space spectroscopy and mapping at the atomic-scale

Colloidal semiconductor nanocrystals have emerged as a promising class of technological materials with optoelectronic properties controllable through quantum-confinement effects. Despite recent successes in this field, an important factor that remains difficult to control is the impact of the nanocrystal surface structure on the photophysics and electron transport in nanocrystal-based materials. In particular, the presence of surface defects and irregularities can result in the formation of localized sub-bandgap states that can dramatically affect the dynamics of charge carriers and electronic excitations. Here we use Scanning Tunneling Spectroscopy (STS) to investigate, in real space, sub-bandgap states in individual ligand-free PbS nanocrystals. In the majority of studied PbS nanocrystals, spatial mapping of electronic density of states with STS shows atomic-scale variations attributable to the presence of surface reconstructions. STS spectra show that the presence of surface reconstructions results in formation of surface-bound sub-bandgap electronic states. The nature of the surface reconstruction varies depending on the surface stoichiometry, with lead-rich surfaces producing unoccupied sub-bandgap states, and sulfur-rich areas producing occupied sub-bandgap states. Highly off-stoichiometric areas produce both occupied and unoccupied states showing dramatically reduced bandgaps. Different reconstruction patterns associated with specific crystallographic directions are also found for different nanocrystals. This study provides insight into the mechanisms of sub-bandgap state formation that, in a modified form, are likely to be applicable to ligand-passivated nanocrystal surfaces, where steric hindrance between ligands can result in under-coordination of surface atoms.

Multiple-exciton generation in lead selenide nanorod solar cells with external quantum efficiencies exceeding 120

Multiple-exciton generation—a process in which multiple charge-carrier pairs are generated from a single optical excitation—is a promising way to improve the photocurrent in photovoltaic devices and offers the potential to break the Shockley–Queisser limit. One-dimensional nanostructures, for example nanorods, have been shown spectroscopically to display increased multiple exciton generation efficiencies compared with their zero-dimensional analogues. Here we present solar cells fabricated from PbSe nanorods of three different bandgaps. All three devices showed external quantum efficiencies exceeding 100% and we report a maximum external quantum efficiency of 122% for cells consisting of the smallest bandgap nanorods. We estimate internal quantum efficiencies to exceed 150% at relatively low energies compared with other multiple exciton generation systems, and this demonstrates the potential for substantial improvements in device performance due to multiple exciton generation.

One-dimensional nanostructures have been shown to increase multiple-exciton generation, offering a pathway to breaking the Shockley–Queisser limit. Here, Davis et al. have fabricated working photovoltaic devices based on high-quality PbSe nanorods and a maximum external quantum efficiency of 122 % was demonstrated.

Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots

In carrier multiplication, the absorption of a single photon results in two or more electron–hole pairs. Quantum dots are promising materials for implementing carrier multiplication principles in real-life technologies. So far, however, most of research in this area has focused on optical studies of solution samples with yet to be proven relevance to practical devices. Here we report ultrafast electro-optical studies of device-grade films of electronically coupled quantum dots that allow us to observe multiplication directly in the photocurrent. Our studies help rationalize previous results from both optical spectroscopy and steady-state photocurrent measurements and also provide new insights into effects of electric field and ligand treatments on multiexciton yields. Importantly, we demonstrate that using appropriate chemical treatments of the films, extra charges produced by carrier multiplication can be extracted from the quantum dots before they are lost to Auger recombination and hence can contribute to photocurrent of practical devices.

In semiconductors, the absorption of a high energy photon can result in the formation of several charge pairs. Here the authors perform ultrafast photocurrent measurements on thin films to explore how quantum dot couplings and the electric field influence multiexciton photovoltaic devices.

Solution processed flexible and bending durable heterojunction colloidal quantum dot solar cell

A flexible hybrid heterojunction PbS colloidal quantum dot solar cell, where the photoactive layers are deposited using a solution processed fabrication approach under ambient condition and at room temperature is presented. The bending stability of the obtained solar cell is evaluated. The results show that the solar cell exhibits high bending stability and even under the bent state the cell also maintains a high performance, which shows the potential of the quantum dot solar cell toward a lightweight, bendable power source with many possible applications.

Fast Dissociation and Reduced Auger Recombination of Multiple Excitons in Closely Packed PbS Nanocrystal Thin Films

Exciton decay dynamics in chemically treated PbS quantum-dot (QD) films have been studied using femtosecond transient-absorption (TA) spectroscopy. In photoconductive QD films, a decay component with a lifetime of a few nanoseconds appeared in the TA signals because of exciton dissociation under weak excitation. Increasing excitation fluence resulted in additional fast-decay components corresponding to the lifetimes of multiple excitons, which decreased with increasing photoconductivity of the closely packed QD films. Auger recombination in photoexcited QDs was suppressed in highly photoconductive films. Our findings clearly show that the carrier transfer between the QDs dominates the lifetimes of single and multiple excitons.

The expanding world of hybrid perovskites: materials properties and emerging applications

Hybrid inorganic–organic perovskites have emerged over the last 5 years as a promising class of materials for optoelectronic applications. Most notably, their solar cells have achieved power conversion efficiencies above 20% in an unprecedented timeframe; however, many fundamental questions still remain about these materials. This Prospective Article reviews the procedures used to deposit hybrid perovskites and describes the resulting crystallographic and morphological structures. It further details the electrical and optical properties of perovskites and then concludes by highlighting a number of potential applications and the materials challenges that must be overcome before they can be realized.

Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics

CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production of free charges that can contribute to the photocurrent in a device. We show that free mobile charges can be efficiently produced via CM in solids of strongly coupled PbSe QDs. Strong electronic coupling between the QDs resulted in a charge carrier mobility of the order of 1 cm(2) V(-1) s(-1). This mobility is sufficiently high so that virtually all electron-hole pairs escape from recombination. The impact of temperature on the CM efficiency in PbSe QD solids was also studied. We inferred that temperature has no observable effect on the rate of cooling of hot charges nor on the CM rate. We conclude that exploitation of CM requires that charges have sufficiently high mobility to escape from recombination. The contribution of CM to the efficiency of photovoltaic devices can be further enhanced by an increase of the CM efficiency above the energetic threshold of twice the band gap. For large-scale applications in photovoltaic devices, it is important to develop abundant and nontoxic materials that exhibit efficient CM.

A phonon scattering bottleneck for carrier cooling in lead chalcogenide nanocrystals

The cooling dynamics of hot charge carriers in colloidal lead chalcogenide nanocrystals is studied by hyperspectral transient absorption spectroscopy. We demonstrate a transient accumulation of charge carriers at a high energy critical point in the Brillouin zone. Using a theoretical study of the cooling rate in lead chalcogenides, we attribute this slowing down of charge carrier cooling to a phonon scattering bottleneck around this critical point. The relevance of this observation for the possible harvesting of the excess energy of hot carriers by schemes such as multiexciton generation is discussed.

Epitaxially connected PbSe quantum-dot films: controlled neck formation and optoelectronic properties

Ligand exchange is a much-used method to increase the conductivity of colloidal quantum-dot films by replacing long insulating ligands on quantum-dot surfaces with shorter ones. Here we show that while some ligands indeed replace the original ones as expected, others may be used to controllably remove the native ligands and induce epitaxial necking of specific crystal facets. In particular, we demonstrate that amines strip lead oleate from the (100) surfaces of PbSe quantum dots. This leads to necking of QDs and results in cubic superlattices of epitaxially connected QDs. The number of amine head-groups as well as the carbon chain length of linear diamines is shown to control the extent of necking. DFT calculations show that removal of Pb(oleate)2 from (100) surfaces is exothermic for all amines, but the driving force increases as monoamines < long diamines < short diamines < tetramines. The neck formation and cubic ordering results in a higher optical absorption cross section and higher charge carrier mobilities, thereby showing that the use of the proper multidentate amine molecules is a powerful tool to create supercrystals of epitaxially connected PbSe QDs with controlled electronic coupling.

Spatial Mapping of Sub-Bandgap States Induced by Local Nonstoichiometry in Individual Lead Sulfide Nanocrystals

The properties of photovoltaic devices based on colloidal nanocrystals are strongly affected by localized sub-bandgap states associated with surface imperfections. A correlation between their properties and the atomic-scale structure of chemical imperfections responsible for their appearance must be established to understand the nature of such surface states. Scanning tunneling spectroscopy is used to visualize the manifold of electronic states in annealed ligand-free lead sulfide nanocrystals supported on the Au(111) surface. Delocalized quantum-confined states and localized sub-bandgap states are identified, for the first time, via spatial mapping. Maps of the sub-bandgap states show localization on nonstoichiometric adatoms self-assembled on the nanocrystal surfaces. The present model study sheds light onto the mechanisms of surface state formation that, in a modified form, may be relevant to the more general case of ligand-passivated nanocrystals, where under-coordinated surface atoms exist due to the steric hindrance between passivating ligands attached to the nanocrystal surface.

Multiexciton Solar Cells of CuInSe2 Nanocrystals

Peak external quantum efficiencies (EQEs) of just over 120% were observed in photovoltaic (PV) devices of CuInSe2 nanocrystals prepared with a photonic curing process. The extraction of more than one electron/hole pair as a result of the absorption of a single photon can occur if multiple excitons are generated and extracted. Multiexciton generation (MEG) in the nanocrystal films was substantiated by transient absorption spectroscopy. We propose that photonic curing leads to sufficient electronic coupling between nanocrystals to enable multiexciton extraction under typical solar illumination conditions. Under low light conditions, however, the EQE drops significantly, indicating that photonic curing-induced ligand desorption creates a significant amount of traps in the film that limit the overall power conversion efficiency of the device.

Multiple Exciton Generation in Colloidal Nanocrystals

In a conventional solar cell, the energy of an absorbed photon in excess of the band gap is rapidly lost as heat, and this is one of the main reasons that the theoretical efficiency is limited to ~33%. However, an alternative process, multiple exciton generation (MEG), can occur in colloidal quantum dots. Here, some or all of the excess energy is instead used to promote one or more additional electrons to the conduction band, potentially increasing the photocurrent of a solar cell and thereby its output efficiency. This review will describe the development of this field over the decade since the first experimental demonstration of multiple exciton generation, including the controversies over experimental artefacts, comparison with similar effects in bulk materials, and the underlying mechanisms. We will also describe the current state-of-the-art and outline promising directions for further development.

A hot electron-hole pair breaks the symmetry of a semiconductor quantum dot

The best-understood property of semiconductor quantum dots (QDs) is the size-dependent optical transition energies due to the quantization of charge carriers near the band edges. In contrast, much less is known about the nature of hot electron-hole pairs resulting from optical excitation significantly above the bandgap. Here, we show a transient Stark effect imposed by a hot electron-hole pair on optical transitions in PbSe QDs. The hot electron-hole pair does not behave as an exciton, but more bulk-like as independent carriers, resulting in a transient and varying dipole moment which breaks the symmetry of the QD. As a result, we observe redistribution of optical transition strength to dipole forbidden transitions and the broadening of dipole-allowed transitions during the picosecond lifetime of the hot carriers. The magnitude of symmetry breaking scales with the amount of excess energy of the hot carriers, diminishes as the hot carriers cool down and disappears as the hot electron-hole pair becomes an exciton. Such a transient Stark effect should be of general significance to the understanding of QD photophysics above the bandgap.