Piezoelectric control of the mobility of a domain wall driven by adiabatic and non-adiabatic torques

Self-assembly of Co/Pt stripes with current-induced domain wall motion towards 3D racetrack devices

Modification of the magnetic properties under the induced strain and curvature is a promising avenue to build three-dimensional magnetic devices, based on the domain wall motion. So far, most of the studies with 3D magnetic structures were performed in the helixes and nanowires, mainly with stationary domain walls. In this study, we demonstrate the impact of 3D geometry, strain and curvature on the current-induced domain wall motion and spin-orbital torque efficiency in the heterostructure, realized via a self-assembly rolling technique on a polymeric platform. We introduce a complete 3D memory unit with write, read and store functionality, all based on the field-free domain wall motion. Additionally, we conducted a comparative analysis between 2D and 3D structures, particularly addressing the influence of heat during the electric current pulse sequences. Finally, we demonstrated a remarkable increase of 30% in spin-torque efficiency in 3D configuration.

Low Power In-Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures

The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin-orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane can turn on and off the TI surface current. By exploiting this reciprocal behavior, we can use two FM/3DTI heterostructures to design an integrated 1-transistor 1-magnetic tunnel junction random access memory unit (1T1MTJ RAM) for an ultra low power Processing-in-Memory (PiM) architecture. Our calculation involves combining the Fokker-Planck equation with the Nonequilibrium Green Function (NEGF) based flow of conduction electrons and Landau-Lifshitz-Gilbert (LLG) based dynamics of magnetization. Our combined approach allows us to connect device performance metrics with underlying material parameters, which can guide proposed experimental and fabrication efforts.

Optimized Voltage-Induced Control of Magnetic Domain-Wall Propagation in Hybrid Piezoelectric/Magnetostrictive Devices

A theory of voltage-induced control of magnetic domain walls propagating along the major axis of a magnetostrictive nanostrip, tightly coupled with a ceramic piezoelectric, is developed in the framework of the Landau–Lifshitz–Gilbert equation. It is assumed that the strains undergone by the piezoelectric actuator, subject to an electric field generated by a dc bias voltage applied through a couple of lateral electrodes, are fully transferred to the magnetostrictive layer. Taking into account these piezo-induced strains and considering a magnetostrictive linear elastic material belonging to the cubic crystal class, the magnetoelastic field is analytically determined. Therefore, by using the classical traveling-wave formalism, the explicit expressions of the most important features characterizing the two dynamical regimes of domain-wall propagation have been deduced, and their dependence on the electric field strength has been highlighted. Moreover, some strategies to optimize such a voltage-induced control, based on the choice of the ceramic piezoelectric material and the orientation of dielectric poling and electric field with respect to the reference axes, have been proposed.

Tuning spin-orbit torques at magnetic domain walls in epitaxial Pt/Co/Pt1-x Au x trilayers

Magnetic domain walls (DWs) in perpendicularly magnetised thin films are attractive for racetrack memories, but technological progress still requires further reduction of the operationing currents. To efficiently drive these objects by the means of electric current, one has to optimize the damping-like torque which is caused by the spin Hall effect (SHE). This not only requires a high net spin Hall angle but also the presence of a Dzyaloshinskii-Moriya interaction (DMI) to produce magnetic textures sensitive to this type of the torque. In this work, we explore the coexistence and importance of these two phenomena in epitaxial Pt/Co/Pt_1-x Au _x films in which we control the degree of inversion symmetry-breaking between the two interfaces by varying x. Gold is used as a material with negligible induced magnetic moment and SHE and the interface between Co/Au as a source of a small DMI. We find no current-induced DW motion in the symmetric Pt/Co/Pt (x = 0) trilayer. By fitting a one-dimensional model to the DW velocity as a function of drive current density and in-plane applied field in samples with non-zero values of x, we find that both net DMI strength and spin Hall angle rise monotonically as Au is introduced. They reach values of 0.75 ± 0.05 mJ m^-2 and 0.10 ± 0.01, respectively, for Pt/Co/Au (x = 1).

Shear-band affected zone revealed by magnetic domains in a ferromagnetic metallic glass

Plastic deformation of metallic glasses (MGs) has long been considered to be confined to nanoscale shear bands, but recently an affected zone around the shear band was found. Yet, due to technical limitations, the shear-band affected zone (SBAZ), which is critical for understanding shear banding and design of ductile MGs, has yet to be precisely identified. Here, by using magnetic domains as a probe with sufficiently high sensitivity and spatial resolution, we unveil the structure of SBAZs in detail. We demonstrate that shear banding is accompanied by a micrometer-scale SBAZ with a gradient in the strain field, and multiple shear bands interact through the superimposition of SBAZs. There also exists an ultra-long-range gradual elastic stress field extending hundreds of micrometers away from the shear band. Our findings provide a comprehensive picture on shear banding and are important for elucidating the micro-mechanisms of plastic deformation in glasses.

Metallic glasses deform along nanoscale shear bands, and while it is known that they affect the neighboring glass regions, exactly how is unclear. Here, the authors use magnetic force microscopy to atomically resolve the shear-band affected zone and show its effects extends much further than previously thought.

Domain wall energy and strain in Pt/Co/Ir thin films on piezoelectric transducers

We study the energy and creep velocity of magnetic domain walls in perpendicularly magnetised Pt/Co/Ir thin films under strain. We find that the enhancement of domain wall creep velocity under strain from piezoelectric transducers is largest in films with the thinnest Co layers (0.56 nm), in which the strain causes the smallest relative change in perpendicular magnetic anisotropy and the largest relative change in domain wall creep velocity. We show how domain wall energy is predictive of the sensitivity of domain wall creep velocity to changes in strain, and thus provide a route to designing magnetic thin film systems for optimum strain control.

Voigt effect-based wide-field magneto-optical microscope integrated in a pump-probe experimental setup

In this work, we describe an experimental setup for a spatially resolved pump-probe experiment with an integrated wide-field magneto-optical (MO) microscope. The MO microscope can be used to study ferromagnetic materials with both perpendicular-to-plane and in-plane magnetic anisotropy via polar Kerr and Voigt effects, respectively. The functionality of the Voigt effect-based microscope was tested using an in-plane magnetized ferromagnetic semiconductor (Ga,Mn)As. It was revealed that the presence of mechanical defects in the (Ga,Mn)As epilayer alters significantly the magnetic anisotropy in their proximity. The importance of MO experiments with simultaneous temporal and spatial resolutions was demonstrated using a (Ga,Mn)As sample attached to a piezoelectric transducer, which produces a voltage-controlled strain. We observed a considerably different behavior in different parts of the sample that enabled us to identify sample parts where the epilayer magnetic anisotropy was significantly modified by the presence of the piezoelectric transducer and where it was not. Finally, we discuss the possible applicability of our experimental setup for the research of compensated antiferromagnets, where only MO effects even in magnetic moments are present.

Magnon Straintronics: Reconfigurable Spin-Wave Routing in Strain-Controlled Bilateral Magnetic Stripes

We observe and explain theoretically strain-induced spin-wave routing in the bilateral composite multilayer. By means of Brillouin light scattering and microwave spectroscopy, we study the spin-wave transport across three adjacent magnonic stripes, which are strain coupled to a piezoelectric layer. The strain may effectively induce voltage-controlled dipolar spin-wave interactions. We experimentally demonstrate the basic features of the voltage-controlled spin-wave switching. We show that the spin-wave characteristics can be tuned with an electrical field due to piezoelectricity and magnetostriction of the piezolayer and layered composite and mechanical coupling between them. Our experimental observations agree with numerical calculations.

Deterministic control of magnetic vortex wall chirality by electric field

Concepts for information storage and logical processing based on magnetic domain walls have great potential for implementation in future information and communications technologies. To date, the need to apply power hungry magnetic fields or heat dissipating spin polarized currents to manipulate magnetic domain walls has limited the development of such technologies. The possibility of controlling magnetic domain walls using voltages offers an energy efficient route to overcome these limitations. Here we show that a voltage-induced uniaxial strain induces reversible deterministic switching of the chirality of a magnetic vortex wall. We discuss how this functionality will be applicable to schemes for information storage and logical processing, making a significant step towards the practical implementation of magnetic domain walls in energy efficient computing.

Inertial displacement of a domain wall excited by ultra-short circularly polarized laser pulses

Domain wall motion driven by ultra-short laser pulses is a pre-requisite for envisaged low-power spintronics combining storage of information in magnetoelectronic devices with high speed and long distance transmission of information encoded in circularly polarized light. Here we demonstrate the conversion of the circular polarization of incident femtosecond laser pulses into inertial displacement of a domain wall in a ferromagnetic semiconductor. In our study, we combine electrical measurements and magneto-optical imaging of the domain wall displacement with micromagnetic simulations. The optical spin-transfer torque acts over a picosecond recombination time of the spin-polarized photo-carriers that only leads to a deformation of the initial domain wall structure. We show that subsequent depinning and micrometre-distance displacement without an applied magnetic field or any other external stimuli can only occur due to the inertia of the domain wall.

Domain wall motion driven by ultra-short laser pulses has potential for storage of information in magnetoelectronic devices. Here the authors demonstrate the conversion of a circularly polarized femtosecond laser light into inertial displacement of a domain wall in a ferromagnetic semiconductor.

Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19

We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe₈₁Ga₁₉. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline and shape induced anisotropies to play a crucial role in stabilising a flux-closing domain pattern. We use magnetic imaging, micromagnetic calculations and linear elastic modelling to investigate a region close to the edges of an etched structure. This highly-strained edge region has a significant influence on the magnetic domain configuration due to an induced magnetic anisotropy resulting from the inverse magnetostriction effect. We investigate the competition between the strain-induced and shape-induced anisotropy energies, and the resultant stable domain configurations, as the width of the bar is reduced to the nanoscale range. Understanding this behaviour will be important when designing hybrid magneto-electric spintronic devices based on highly magnetostrictive materials.

Piezo Voltage Controlled Planar Hall Effect Devices

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Strain-assisted magnetization reversal in Co/Ni multilayers with perpendicular magnetic anisotropy

Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr_0.52Ti_0.48)O₃] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices.

Fast Magnetic Domain-Wall Motion in a Ring-Shaped Nanowire Driven by a Voltage

Magnetic domain-wall motion driven by a voltage dissipates much less heat than by a current, but none of the existing reports have achieved speeds exceeding 100 m/s. Here phase-field and finite-element simulations were combined to study the dynamics of strain-mediated voltage-driven magnetic domain-wall motion in curved nanowires. Using a ring-shaped, rough-edged magnetic nanowire on top of a piezoelectric disk, we demonstrate a fast voltage-driven magnetic domain-wall motion with average velocity up to 550 m/s, which is comparable to current-driven wall velocity. An analytical theory is derived to describe the strain dependence of average magnetic domain-wall velocity. Moreover, one 180° domain-wall cycle around the ring dissipates an ultrasmall amount of heat, as small as 0.2 fJ, approximately 3 orders of magnitude smaller than those in current-driven cases. These findings suggest a new route toward developing high-speed, low-power-dissipation domain-wall spintronics.

Electric-field control of magnetism via strain transfer across ferromagnetic/ferroelectric interfaces

By taking advantage of the coupling between magnetism and ferroelectricity, ferromagnetic (FM)/ferroelectric (FE) multiferroic interfaces play a pivotal role in manipulating magnetism by electric fields. Integrating the multiferroic heterostructures into spintronic devices significantly reduces energy dissipation from Joule heating because only an electric field is required to switch the magnetic element. New concepts of storage and processing of information thus can be envisioned when the electric-field control of magnetism is a viable alternative to the traditional current based means of controlling magnetism. This article reviews some salient aspects of the electric-field effects on magnetism, providing a short overview of the mechanisms of magneto-electric (ME) coupling at the FM/FE interfaces. A particular emphasis is placed on the ME effect via interfacial magneto-elastic coupling arising from strain transfer from the FE to FM layer. Recent results that demonstrate the electric-field control of magnetic anisotropy, magnetic order, magnetic domain wall motion, and etc are described. Obstacles that need to be overcome are also discussed for making this a reality for future device applications.

Magnetic microscopy and topological stability of homochiral Néel domain walls in a Pt/Co/AlOx trilayer

The microscopic magnetization variation in magnetic domain walls in thin films is a crucial property when considering the torques driving their dynamic behaviour. For films possessing out-of-plane anisotropy normally the presence of Néel walls is not favoured due to magnetostatic considerations. However, they have the right structure to respond to the torques exerted by the spin Hall effect. Their existence is an indicator of the interfacial Dzyaloshinskii-Moriya interaction (DMI). Here we present direct imaging of Néel domain walls with a fixed chirality in device-ready Pt/Co/AlOx films using Lorentz transmission electron and Kerr microscopies. It is shown that any independently nucleated pair of walls in our films form winding pairs when they meet that are difficult to annihilate with field, confirming that they all possess the same topological winding number. The latter is enforced by the DMI. The field required to annihilate these winding wall pairs is used to give a measure of the DMI strength. Such domain walls, which are robust against collisions with each other, are good candidates for dense data storage.

Optical spin-transfer-torque-driven domain-wall motion in a ferromagnetic semiconductor

We demonstrate optical manipulation of the position of a domain wall in a dilute magnetic semiconductor, GaMnAsP. Two main contributions are identified. First, photocarrier spin exerts a spin-transfer torque on the magnetization via the exchange interaction. The direction of the domain-wall motion can be controlled using the helicity of the laser. Second, the domain wall is attracted to the hot spot generated by the focused laser. Unlike magnetic-field-driven domain-wall depinning, these mechanisms directly drive domain-wall motion, providing an optical tweezerlike ability to position and locally probe domain walls.

Modification of perpendicular magnetic anisotropy and domain wall velocity in Pt/Co/Pt by voltage-induced strain

The perpendicular magnetic anisotropy K_eff, magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85–1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. K_eff, measured by the extraordinary Hall effect, is reduced by 10 kJ/m³ by tensile strain out-of-plane ε_z = 9 × 10⁻⁴, independently of the film thickness, indicating a dominant volume contribution to the magnetostriction. The same strain reduces the coercive field by 2–4 Oe, and increases the domain wall velocity measured by wide-field Kerr microscopy by 30-100%, with larger changes observed for thicker Co layers. We consider how strain-induced changes in the perpendicular magnetic anisotropy can modify the coercive field and domain wall velocity.

Variation of exchange energy in δ-(Ga,Mn)As films under tensile strain: PBE and LDA+U calculations

PBE and LDA+U calculations were both used to clarify the variation of exchange energy in three kinds of δ-(Ga,Mn)As films under tensile strain.

Spin-torque building blocks

The discovery of the spin-torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin torque provides an efficient tool to manipulate - precisely, rapidly and at low energy cost - the magnetic state, which is in turn the central information medium of spintronic devices. By keeping the same magnetic stack, but by tuning a device's shape and bias conditions, the spin torque can be engineered to build a variety of advanced magnetic nanodevices. Here we show that by assembling these nanodevices as building blocks with different functionalities, novel types of computing architecture can be envisaged. We focus in particular on recent concepts such as magnonics and spintronic neural networks.

Critical role of the sample preparation in experiments using piezoelectric actuators inducing uniaxial or biaxial strains

We report on a systematic study of the stress transferred from an electromechanical piezo-stack into GaAs wafers under a wide variety of experimental conditions. We show that the strains in the semiconductor lattice, which were monitored in situ by means of X-ray diffraction, are strongly dependent on both the wafer thickness and on the selection of the glue which is used to bond the wafer to the piezoelectric actuator. We have identified an optimal set of parameters that reproducibly transfers the largest distortions at room temperature. We have studied strains produced not only by the frequently used uniaxial piezostressors but also by the biaxial ones which replicate the routinely performed experiments using substrate-induced strains but with the advantage of a continuously tunable lattice distortion. The time evolution of the strain response and the sample tilting and/or bending are also analyzed and discussed.